Photosensitive circuit and fingerprint recognition device

Abstract

The disclosed embodiment provides a photosensitive circuit and a fingerprint recognition device, wherein the photosensitive circuit at least includes: a plurality of photosensitive pixel areas, wherein each photosensitive pixel area corresponds to a display pixel area; the number of photosensitive PINs included in adjacent photosensitive pixel areas is different, the first photosensitive pixel area includes a first photosensitive PIN, and the second photosensitive pixel area adjacent to the first photosensitive pixel area includes two second photosensitive PINs, each photosensitive PIN is connected to an upper electrode, wherein the total area of ​​a first photosensitive PIN is set to be the same as the total area of ​​two second photosensitive PINs, and the total area of ​​the upper electrode coverage area on a first photosensitive PIN is set to be the same as the total area of ​​the upper electrode coverage area on two second photosensitive PINs. The disclosed embodiment achieves the same effective area after being blocked, so that the basic light data collected by each photosensitive pixel area is the same, further increasing the accuracy of the collected fingerprint image.

Description

Technical Field

[0001] The present disclosure relates to the display field, and in particular to a photosensitive circuit and a fingerprint recognition device. Background Art

[0002] In terms of ultra-thin folding screens, UTG (ultra-thin flexible glass) is a thinner and stronger glass that is not only more resilient than CPI film, but also retains many of the advantages of glass itself. In view of the market demand that UTG may bring in the future, ultra-thin folding screens equipped with fingerprint recognition functions are the trend of future mobile phones.

[0003] The current UTG is designed to pursue a large-area PIN design, and PINs are usually set at the gaps between display pixels. However, when this design is used to collect fingerprint images, the basic light data collected by each photosensitive pixel area is different, so the collected fingerprint image is inaccurate and the product performance is poor. Summary of the invention

[0004] In view of this, the embodiments of the present disclosure propose a photosensitive circuit and a fingerprint recognition device to solve the following problems in the prior art: When designing UTG, a PIN is usually set at the gap between display pixels. However, when this design is used to actually collect fingerprint images, the basic light data collected by each photosensitive pixel area is different, and the collected fingerprint image is inaccurate, resulting in poor product performance.

[0005] On the one hand, an embodiment of the present disclosure proposes a photosensitive circuit, which at least includes: multiple photosensitive pixel areas, wherein each photosensitive pixel area corresponds to a display pixel area; adjacent photosensitive pixel areas include different numbers of photosensitive PINs, a first photosensitive pixel area includes a first photosensitive PIN, and a second photosensitive pixel area adjacent to the first photosensitive pixel area includes two second photosensitive PINs, each photosensitive PIN is connected to an upper electrode, wherein the total area of ​​one of the first photosensitive PINs is set to be the same as the total area of ​​two of the second photosensitive PINs, and the total area of ​​an upper electrode coverage area on one of the first photosensitive PINs is set to be the same as the total area of ​​an upper electrode coverage area on two of the second photosensitive PINs.

[0006] In some embodiments, the number of upper electrode coverage areas in the first photosensitive pixel region is set to be the same as the number of upper electrode coverage areas in the second photosensitive pixel region.

[0007] In some embodiments, each of the second photosensitive PINs is configured to include only one upper electrode covering area, and the first photosensitive PIN is configured to include two upper electrode covering areas, and the two upper electrode covering areas are respectively located at two ends of the first photosensitive PIN.

[0008] In some embodiments, each of the second photosensitive PINs is configured to include only one upper electrode coverage area, and the first photosensitive PIN is configured to include only one upper electrode coverage area.

[0009] In some embodiments, the first photosensitive PIN and the second photosensitive PIN are both rectangular in shape, and the upper electrode coverage area is square or circular.

[0010] In some embodiments, the designs of the first photosensitive PIN, the second photosensitive PIN, and the upper electrode coverage area satisfy the following formulas at the same time:

[0011] DL*DS=2*dL*dS;

[0012] DL*DS-2(dX)^2=2*(dL*dS-(dX)^2);

[0013] Among them, DL is the long side of the first photosensitive PIN, DS is the short side of the first photosensitive PIN, dL is the long side of the second photosensitive PIN, dS is the short side of the second photosensitive PIN, and dX is the side length or diameter of the upper electrode coverage area.

[0014] In some embodiments, the value range of DL is 3um-40um; the value range of DS is 3um-40um; the value range of dL is 1um-20um; the value range of DS is 1um-20um; and the value range of dX is 1um-10um.

[0015] In some embodiments, the lateral width of the photosensitive PIN and the pixel anode design of the display pixel area satisfy the following formula:

[0016] The lateral width of the photosensitive PIN is ≤DX-2h*tanδ;

[0017] Among them, the lateral width of the photosensitive PIN is dS or DS, h is the vertical distance between the pixel anode and the photosensitive PIN space, DX is the lateral width of the adjacent pixel anode, and δ is the maximum angle of the light reflected back by the reflector.

[0018] In some embodiments, δ ranges from 65° to 80°, h ranges from 2um to 6um, and DX ranges from 16um to 25um.

[0019] On the other hand, an embodiment of the present disclosure provides a fingerprint recognition device, which at least includes: the photosensitive circuit described in any embodiment of the present disclosure.

[0020] When designing the photosensitive circuit, the disclosed embodiment does not change the position of the original photosensitive PIN, but adjusts the effective area of ​​the original photosensitive PIN after being blocked, and reduces the effective area of ​​the photosensitive PIN after being blocked in the photosensitive pixel area with only one photosensitive PIN, to ensure that when the total area of ​​a first photosensitive PIN is the same as the total area of ​​two second photosensitive PINs, the total area of ​​the upper electrode coverage area on a first photosensitive PIN is the same as the total area of ​​the upper electrode coverage area on the two second photosensitive PINs, thereby achieving the same effective area after being blocked, so that the basic light data collected by each photosensitive pixel area is the same, further increasing the accuracy of the collected fingerprint image, achieving the best photosensitivity effect with minimal changes, and having good product performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0022] Figure 1 A schematic diagram of the location of the photosensitive PIN in the photosensitive circuit provided by the related technology;

[0023] Figure 2 A schematic diagram of the structure of a photosensitive circuit provided in an embodiment of the present disclosure;

[0024] Figure 3 A schematic cross-sectional view of the structure of a fingerprint recognition device provided in an embodiment of the present disclosure;

[0025] Figure 4 A schematic diagram of the positional relationship between the photosensitive PIN and the display pixel provided in the embodiment of the present disclosure;

[0026] Figure 5 A schematic diagram of the relationship between the photosensitive PIN and the pixel anode provided in the embodiment of the present disclosure;

[0027] Figure 6 Photosensitive circuit level design provided for the embodiment of the present disclosure Figure 1 ;

[0028] Figure 7 Photosensitive circuit level design provided for the embodiment of the present disclosure Figure 2 ;

[0029] Figure 8 Photosensitive circuit level design provided for the embodiment of the present disclosure Figure 3 ;

[0030] Fig. 9 Photosensitive circuit level design provided for the embodiment of the present disclosure Figure 4 ;

[0031] Fig.10 Photosensitive circuit level design provided for the embodiment of the present disclosure Figure 5 ;

[0032] Fig.11 Photosensitive circuit level design provided for the embodiment of the present disclosure Figure 6 ;

[0033] Fig.12 The embodiments of the present disclosure provide Fig.11 Schematic diagram of the comprehensive hierarchical structure;

[0034] Fig.13 A schematic diagram of another structure of the photosensitive circuit provided in the embodiment of the present disclosure. DETAILED DESCRIPTION

[0035] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0036] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0037] In order to keep the following description of the embodiments of the present disclosure clear and concise, the present disclosure omits detailed descriptions of well-known functions and well-known components.

[0038] When designing UTG, PIN is usually set at the gap between display pixels, such as Figure 1However, when this design is used to collect fingerprint images, the basic light data collected by each photosensitive pixel area is different, so the collected fingerprint image is inaccurate and the product performance is poor. The above problem is that the simple system algorithm cannot achieve the non-uniform correction of the screen effect. Therefore, the embodiment of the present disclosure considers adjusting the hardware circuit.

[0039] The present disclosure provides a photosensitive circuit, the structure of which is shown in FIG. Figure 2 As shown (only a specific structure is shown and does not limit the embodiment of the present disclosure), at least includes:

[0040] A plurality of photosensitive pixel regions (each region enclosed by a dotted box in the figure), wherein each photosensitive pixel region corresponds to a display pixel region; adjacent photosensitive pixel regions include different numbers of photosensitive PINs, the first photosensitive pixel region includes a first photosensitive PIN, the second photosensitive pixel region adjacent to the first photosensitive pixel region includes two second photosensitive PINs, each photosensitive PIN is connected to an upper electrode, wherein a total area of ​​a first photosensitive PIN is set to be the same as a total area of ​​two second photosensitive PINs, and a total area of ​​an upper electrode coverage area on a first photosensitive PIN is set to be the same as a total area of ​​an upper electrode coverage area on two second photosensitive PINs.

[0041] When designing the photosensitive circuit, the disclosed embodiment does not change the position of the original photosensitive PIN, but adjusts the effective area of ​​the original photosensitive PIN after being blocked, and reduces the effective area of ​​the photosensitive PIN after being blocked in the photosensitive pixel area with only one photosensitive PIN, to ensure that when the total area of ​​a first photosensitive PIN is the same as the total area of ​​two second photosensitive PINs, the total area of ​​the upper electrode coverage area on a first photosensitive PIN is the same as the total area of ​​the upper electrode coverage area on the two second photosensitive PINs, thereby achieving the same effective area after being blocked, so that the basic light data collected by each photosensitive pixel area is the same, further increasing the accuracy of the collected fingerprint image, achieving the best photosensitivity effect with minimal changes, and having good product performance.

[0042] In the specific design, the disclosed embodiment can set the number of upper electrode covering areas in the first photosensitive pixel area to be the same as the number of upper electrode covering areas in the second photosensitive pixel area, that is, each photosensitive pixel area has two upper electrode covering areas. Since there is only one first photosensitive PIN in the first photosensitive pixel area, two upper electrode covering areas need to be set on the first photosensitive PIN. In a preferred embodiment, each second photosensitive PIN is set to include only one upper electrode covering area, and the first photosensitive PIN is set to include two upper electrode covering areas, and the two upper electrode covering areas are respectively located at the two ends of the first photosensitive PIN.

[0043] In the specific design, the embodiment of the present disclosure can set the number of upper electrode coverage areas in the first photosensitive pixel area to be the same as the number of upper electrode coverage areas in the second photosensitive pixel area, set each second photosensitive PIN to include only one upper electrode coverage area, and set the first photosensitive PIN to include only one upper electrode coverage area. At this time, the area of ​​the upper electrode coverage area on the first photosensitive PIN is twice the area of ​​the upper electrode coverage area on each second photosensitive PIN.

[0044] Figure 2 The photosensitive circuit shown is only a part of the overall photosensitive circuit, and the shape of the photosensitive PIN is only an example. Figure 2 In the embodiment, the first photosensitive PIN and the second photosensitive PIN are both in the shape of a rectangle, and the upper electrode coverage area is close to a square. Of course, it can be a square or a circle. The side length of the upper electrode coverage area on the above photosensitive PIN can be less than the short side length of the photosensitive PIN, or can exceed the short side length of the photosensitive PIN, or be equal to the short side length of the photosensitive PIN, but any design cannot affect the luminescence of the display pixel.

[0045] for Figure 2 The size of the first photosensitive PIN, the second photosensitive PIN and the upper electrode coverage area (calculated as a square in the present disclosure implementation) of the photosensitive circuit can of course be adjusted. When implemented, the design of the first photosensitive PIN, the second photosensitive PIN and the upper electrode coverage area satisfies the following formula at the same time:

[0046] DL*DS=2*dL*dS;

[0047] DL*DS-2(dX)^2=2*(dL*dS-(dX)^2);

[0048] Wherein, DL is the long side of the first photosensitive PIN, DS is the short side of the first photosensitive PIN, dL is the long side of the second photosensitive PIN, dS is the short side of the second photosensitive PIN, and dX is the side length (or diameter) of the upper electrode coverage area. The value ranges of the above-mentioned sides are as follows: the value range of DL is 3um-40um; the value range of DS is 3um-40um; the value range of dL is 1um-20um; the value range of DS is 1um-20um; the value range of dX is 1um-10um.

[0049] The lateral width of the photosensitive PIN and the pixel anode design of the display pixel area preferably satisfy the following formula:

[0050] The lateral width of the photosensitive PIN is ≤DX-2h*tanδ;

[0051] Among them, the lateral width of the photosensitive PIN is dS or DS, h is the vertical distance between the pixel anode and the photosensitive PIN space, DX is the lateral width of the adjacent pixel anode, and δ is the maximum angle of the light reflected back by the reflector. The value ranges of the above parameters are as follows: δ ranges from 65° to 80°, h ranges from 2um to 6um, and DX ranges from 16um to 25um.

[0052] The above solution will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0053] Embodiment 1

[0054] Through optical design and array design, the total area of ​​the photosensitive PIN in all pixels and the effective area after being blocked by the bias routing above the PIN are designed to be the same, which is used to eliminate the anode above the PIN in the pixel as a bias routing and blocking the PIN, so that different pixels receive different signal light reflected from the fingerprint, which ultimately leads to the screen door phenomenon in the fingerprint collection image. The best matching relationship between the PIN size and the routing size and position is given.

[0055] Through optical design and array design, the total area of ​​the photosensitive PIN in all photosensitive pixel areas and the effective area blocked by the bias routing above the photosensitive PIN are designed to be the same. The bias routing method of all pixels is the same, and vias are opened to overlap the photosensitive PIN (cover and PLN2 vias).

[0056] Basic device structure description:

[0057] Based on the UTG folding screen COE In Cell fingerprint recognition device structure, from top to bottom, it includes at least PET, UTG, OCA and CF film layers on both sides, including BM opening (D2) of CF film layer, in cell touch, TFE package (CVD1, IJP, CVD2), cathode (Cathode), PS layer, EL light-emitting layer, PDL, anode (Anode), display pixel circuit structure, PIN pixel circuit structure, PIN photosensitive area, TFT circuit and substrate, etc. Its structure can refer to Figure 3 (Some specific hierarchical structures are shown in the figure, all of which belong to the specific types of the above hierarchical structures).

[0058] When a fingerprint recognition device is used for fingerprint recognition, the basic principles of fingerprint recognition are as follows:

[0059] finger( Figure 3When the upper curve (i.e., fingerprint) contacts the PET of OLED, the OLED is controlled to light up the surface light source to emit light. After the light is emitted from the EL layer located in the COE module, it passes through the BP, TFE, CF, OCA, UTG glass and other film layers of the COE display module to reach the fingerprint interface, i.e., the contact interface between the finger and the protective film layer. The light reflected and scattered back on the interface passes through the above-mentioned other film layers again to reach the photosensitive PIN of the photosensitive sensor to be received and converted into electrical signals. The signals reflected by the valleys and ridges are different, thereby performing fingerprint recognition.

[0060] The optimized design of the embodiment of the present disclosure is described in detail below:

[0061] like Figure 4 As shown in the figure, it is the positional relationship between the photosensitive PIN and the display pixel, where ①, ②, ③, and ④ represent a PIN Pixel (photosensitive pixel area) respectively, and the arrangement of the entire photosensitive circuit is based on the unit composed of ①②③④ as the arrangement repeating unit. The position of the photosensitive PIN in ①④ is fixed relative to the B pixel; the position of the photosensitive PIN in ②③ is fixed relative to the R pixel, and the area size of the photosensitive PIN in ①②③④ is the same, the small photosensitive PIN size d (dL: long side direction, dS: short side direction), the large photosensitive PIN size D (DL: long side direction, DS: short side direction), and the bias trace dX is a square. They need to satisfy the following relationship:

[0062] DL*DS=2*dL*dS (1);

[0063] DL*DS-2(dX)^2=2*(dL*dS-(dX)^2) (2);

[0064] The value range of DL is 3um-40um; the value range of DS is 3um-40um; the value range of dL is 1um-20um; the value range of DS is 1um-20um; the value range of dX is 1um-10um.

[0065] exist Figure 4 Based on the shown Figure 5 As shown in the figure (the upper part is the actual layout of the photosensitive PIN and Anode, and the lower part is the cross-sectional analysis of the situation where the Anode blocks the photosensitive PIN. The upper part and the lower part are not one-to-one corresponding in position), the lateral width ds (or Ds) of the photosensitive PIN and the relationship between the pixel anode must satisfy the relevant constraints.

[0066] In order to prevent the Anode from blocking the photosensitive PIN in the horizontal direction, the pixel anode patterns are inconsistent, and the photosensitive PIN is embedded under the gap between the adjacent pixel Anodes. This will cause the anode to block the photosensitive PIN of different pixels in the horizontal direction differently, so it must be avoided in the design. Figure 5 As shown in the figure, the lateral widths of adjacent pixels Anode are the same, which is DX. Assume that the lateral width of the photosensitive PIN is ds (or Ds), and the vertical distance between Anode and PIN space is h. In order to avoid this problem, the lateral width ds (or Ds) of the photosensitive PIN needs to be constrained:

[0067] Ds (or ds) ≤ DX-2h*tanδ;

[0068] Among them, δ is the maximum angle of the light reflected back from the finger (the object being measured), and the value range of δ is 65°~80°; h is the vertical distance between Anode and PIN space, and its value range is 2um~6um; the lateral width of the adjacent pixel Anode is DX, and its value range is 16um~25um.

[0069] The following table shows three split designs based on the above design. The total area of ​​the photosensitive PIN in all pixels and the effective area after being blocked by the bias trace above the PIN are designed to be the same.

[0070]

[0071]

[0072] Figure 6 , Figure 7 , Figure 8 , Fig. 9 , Fig.10 , Fig.11 A schematic diagram of the hierarchical relationship of the above-mentioned photosensitive circuit during design is shown (the figure only shows the hierarchical structure that needs to be displayed), which shows the detailed structure of the PIN, where ①②③④ respectively represent a photosensitive pixel area (that is, a display pixel area, also called a pixel pixels), where the bias routing method of all pixels is the same, and vias are opened to overlap with the PIN (cover, PLN2 vias). Figure 6 This is the schematic diagram after setting SD2. Figure 7 For Figure 6 The schematic diagram after setting the cover on the basis, Figure 8 For Figure 7 The schematic diagram after setting PLN2 on the basis, Fig. 9 For Figure 8 The schematic diagram after setting the PIN on the basis, Fig.10 For Fig. 9The schematic diagram after setting bias (anode) based on the Fig.11 For Fig.10 The schematic diagram after setting Anode on the basis. Each diagram shows which layer it is set on for easy observation. Fig.12 Shows Fig.11 The various hierarchical structures in the figure can show the inventive point of the embodiment of the present disclosure.

[0073] Embodiment 2

[0074] Through optical design and array design, the total area of ​​the photosensitive PIN in all pixels and the effective area after being blocked by the bias routing above the PIN are designed to be the same. The bias routing of all pixels blocks the PIN, but only some vias are opened to overlap the PIN (cover and PLN2 vias). The structure is shown in the figure below. Fig.13 shown.

[0075] Embodiment 3

[0076] against Figure 3 The structure uses a black blocking layer PDL (a hole is opened in the display pixel area to serve as a pixel defining layer, a small hole d is opened directly above the non-display area PIN to serve as a fingerprint signal transmission channel, and other areas are used to block TFE reflected light, CF reflected light, and touch metal reflected light), and is also designed using the two methods of embodiments one and two, which will not be repeated here.

[0077] The embodiments of the present disclosure further provide a fingerprint recognition device, which at least includes any photosensitive circuit in the above embodiments of the present disclosure, and the structure of the photosensitive circuit is not described in detail here.

[0078] In addition, although exemplary embodiments have been described herein, the scope includes any and all embodiments based on the present disclosure with equivalent elements, modifications, omissions, combinations (e.g., various embodiments intersecting schemes), adaptations or changes. The elements in the claims will be interpreted broadly based on the language adopted in the claims, and are not limited to the examples described in this specification or during the implementation of this application, and the examples will be interpreted as non-exclusive. Therefore, this specification and examples are intended to be considered as examples only, and the true scope and spirit are indicated by the following claims and the full scope of their equivalents.

[0079] The above description is intended to be illustrative rather than restrictive. For example, the above examples (or one or more of them) can be used in combination with each other. For example, a person of ordinary skill in the art can use other embodiments when reading the above description. In addition, in the above-mentioned specific embodiments, various features can be grouped together to simplify the present disclosure. This should not be interpreted as an intention that a disclosed feature that is not required to be protected is necessary for any claim. On the contrary, the subject matter of the present disclosure may be less than all the features of a specific disclosed embodiment. Thus, the following claims are incorporated into the specific embodiments as examples or embodiments, wherein each claim is independently used as a separate embodiment, and it is considered that these embodiments can be combined with each other in various combinations or arrangements. The scope of the present disclosure should be determined with reference to the attached claims and the full scope of equivalent forms granted by these claims.

[0080] Multiple embodiments of the present disclosure are described in detail above, but the present disclosure is not limited to these specific embodiments. Those skilled in the art can make various variations and modifications to the embodiments based on the concepts of the present disclosure, and these variations and modifications should all fall within the scope of protection required by the present disclosure.

Claims

1. A photosensitive circuit, characterized in that: At least: A plurality of light-sensitive pixel regions, wherein each light-sensitive pixel region corresponds to a display pixel region; Adjacent photosensitive pixel areas include different numbers of photosensitive PINs, the first photosensitive pixel area includes a first photosensitive PIN, and the second photosensitive pixel area adjacent to the first photosensitive pixel area includes two second photosensitive PINs, each photosensitive PIN is connected to the upper electrode, wherein the total area of ​​the first photosensitive PIN is set to be the same as the total area of ​​the two second photosensitive PINs, and the total area of ​​the upper electrode coverage area on the first photosensitive PIN is set to be the same as the total area of ​​the upper electrode coverage area on the two second photosensitive PINs.

2. The photosensitive circuit according to claim 1, characterized in that: The number of areas covered by the upper electrode in the first photosensitive pixel region is set to be the same as the number of areas covered by the upper electrode in the second photosensitive pixel region.

3. The photosensitive circuit according to claim 2, characterized in that: Each of the second photosensitive PINs is configured to include only one upper electrode covering area, and the first photosensitive PIN is configured to include two upper electrode covering areas, and the two upper electrode covering areas are respectively located at two ends of the first photosensitive PIN.

4. The photosensitive circuit according to claim 1, characterized in that: Each of the second photosensitive PINs is configured to include only one upper electrode coverage area, and each of the first photosensitive PINs is configured to include only one upper electrode coverage area.

5. The photosensitive circuit according to any one of claims 1 to 4, characterized in that: The first photosensitive PIN and the second photosensitive PIN are both rectangular in shape, and the upper electrode coverage area is square or circular.

6. The photosensitive circuit according to claim 5, characterized in that: The design of the first photosensitive PIN, the second photosensitive PIN and the upper electrode coverage area satisfies the following formula at the same time: DL*DS=2*dL*dS; DL*DS-2(dX)^2=2*(dL*dS-(dX)^2); Among them, DL is the long side of the first photosensitive PIN, DS is the short side of the first photosensitive PIN, dL is the long side of the second photosensitive PIN, dS is the short side of the second photosensitive PIN, and dX is the side length or diameter of the upper electrode coverage area.

7. The photosensitive circuit according to claim 6, characterized in that: The value range of DL is 3um-40um; the value range of DS is 3um-40um; the value range of dL is 1um-20um; the value range of DS is 1um-20um; the value range of dX is 1um-10um.

8. The photosensitive circuit according to claim 6, characterized in that: The lateral width of the photosensitive PIN and the pixel anode design of the display pixel area satisfy the following formula: The lateral width of the photosensitive PIN is ≤DX-2h*tanδ; Among them, the lateral width of the photosensitive PIN is dS or DS, h is the vertical distance between the pixel anode and the photosensitive PIN space, DX is the lateral width of the adjacent pixel anode, and δ is the maximum angle of the light reflected back by the reflector.

9. The photosensitive circuit according to claim 8, characterized in that: The δ value range is 65°-80°, the h value range is 2um-6um, and the DX value range is 16um-25um.

10. A fingerprint recognition device, characterized in that: At least: The photosensitive circuit according to any one of claims 1 to 9.

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