A flash memory particle screening method, terminal and computer readable storage medium

Abstract

The present application provides a flash memory particle screening method, a terminal and a computer-readable storage medium. The flash memory particle screening method includes: erasing the data of the flash memory page in the target flash memory block, and writing the test data to the flash memory page, determining the corresponding erasing time and writing time; reading the test data stored in the flash memory page, determining the bit error rate of the flash memory page; determining the first judgment result of the flash memory page based on the bit error rate; determining the second judgment result of the flash memory page based on the erasing time and the writing time; distinguishing the target flash memory block according to the first judgment result and the second judgment result of the flash memory page contained in the target flash memory block. The present application evaluates the flash memory page through multiple evaluation conditions, reduces the problem of misjudgment of the flash memory page caused by the characteristics of the particle disturbance, edge effect, etc. of the target flash memory block, thereby improving the screening accuracy of the target flash memory block, and making the screening result of the target flash memory block more reliable.

Description

Technical Field

[0001] The present application relates to the technical field of solid-state hard disks, and in particular to a flash memory particle screening method, a terminal, and a computer-readable storage medium. Background Art

[0002] The rapid development of electronic product technology in recent years has led to consumers' increasing requirements for the experience of electronic products, and the demand for faster and more convenient storage products has also increased. Since rewritable non-volatile memory has the characteristics of data non-volatility, power saving, small size, no mechanical structure, and fast reading and writing speed, it is most suitable for portable electronic products such as laptops. Solid-state drives are a type of storage device that uses flash memory as a storage medium. Therefore, the flash memory industry has become a very popular part of the electronics industry in recent years.

[0003] With the continuous updating of flash memory technology, flash memory has developed from 64 layers and 96 layers of triple-level cell (TLC) mode to 128 layers. In addition, the emergence of quad-level cell (QLC) flash memory technology has greatly improved storage density, greatly reduced the cost of storage devices, and accelerated the transition from traditional hard disks to solid-state drives.

[0004] However, due to the development of chip technology, although the storage density has been improved and the price per unit capacity has been reduced, the oxide layer of the flash memory has been compressed thinner and thinner, making the storage medium more sensitive to erasure and writing, resulting in a reduction in the service life and reliability of the flash memory. Summary of the invention

[0005] The main technical problem solved by the present application is to provide a flash memory particle screening method, a terminal and a computer-readable storage medium to solve the problem of low reliability of flash memory storage block screening in the prior art.

[0006] To solve the above technical problems, the first technical solution adopted in the present application is: to provide a flash memory particle screening method, the flash memory particle screening method comprising: erasing the data of the flash memory page in the target flash memory block, and writing test data to the flash memory page, determining the corresponding erase time and write time; reading the test data stored in the flash memory page, determining the bit error rate of the flash memory page; determining a first judgment result of the flash memory page based on the bit error rate; determining a second judgment result of the flash memory page based on the erase time and write time; and distinguishing the target flash memory block according to the first judgment result and the second judgment result of the flash memory page contained in the target flash memory block.

[0007] Among them, determining the first judgment result of the flash memory page based on the bit error rate includes: judging whether the bit error rate is greater than the bit error rate threshold; if the bit error rate is not greater than the bit error rate threshold, determining that the first judgment result of the flash memory page is qualified; if the bit error rate is greater than the bit error rate threshold, determining that the first judgment result of the flash memory page is unqualified.

[0008] Wherein, based on the erase time and the write time, the second judgment result of the flash memory page is determined, including: judging whether the erase time of the flash memory page is greater than the erase time threshold, and whether the write time of the flash memory page is greater than the write time threshold; if the erase time of the flash memory page is not greater than the erase time threshold, and the write time of the flash memory page is not greater than the write time threshold, then the second judgment result of the flash memory page is determined to be qualified; if the erase time of the flash memory page is greater than the erase time threshold, or the write time of the flash memory page is greater than the write time threshold, then the second judgment result of the flash memory page is determined to be unqualified.

[0009] Wherein, based on the erase time and the write time, the second judgment result of the flash memory page is determined, including: judging whether the erase time of the flash memory page is less than the erase time threshold, and whether the write time of the flash memory page is less than the write time threshold; if the erase time of the flash memory page is less than the erase time threshold, and the write time of the flash memory page is less than the write time threshold, then the second judgment result of the flash memory page is determined to be qualified; if the erase time of the flash memory page is not less than the erase time threshold, or the write time of the flash memory page is not less than the write time threshold, then the second judgment result of the flash memory page is determined to be unqualified.

[0010] Among them, the target flash block is distinguished according to the first judgment result and the second judgment result of the flash memory page contained in the target flash block, including: if the first judgment result and the second judgment result of all the flash memory pages contained in the target flash block are qualified, the target flash block is determined to be a good block.

[0011] Among them, the target flash block is distinguished according to the first judgment result and the second judgment result of the flash memory page contained in the target flash block, including: if the first judgment result and the second judgment result of all the flash memory pages contained in the target flash block are both unqualified, then the target flash block is determined to be a bad block.

[0012] Among them, the target flash block is distinguished according to the first judgment result and the second judgment result of the flash memory page included in the target flash block, and it also includes: if the first judgment result and the second judgment result of the flash memory page included in the target flash block are inconsistent, the target flash block is determined to be a defective block.

[0013] Among them, if the first judgment result and the second judgment result of the flash memory page included in the target flash memory block are inconsistent, then the target flash memory block is determined to be a defective block, including: judging whether the number of flash memory pages included in the target flash memory block that are inconsistent with the first judgment result and the second judgment result exceeds a preset value; if the number of flash memory pages included in the target flash memory block that are inconsistent with the first judgment result and the second judgment result exceeds a preset value, then the target flash memory block is determined to be a defective block.

[0014] Among them, erasing the data of the flash memory page in the target flash memory block, and writing the test data to the flash memory page, determining the corresponding erasing time and writing time, including: performing SLC mode erasing on the data of the flash memory page in the target flash memory block; and performing TLC mode data writing on the flash memory page of the erased data in the target flash memory block.

[0015] The test data includes a first value and a second value, the first value and the second value are alternately arranged along a first direction and a second direction, the first direction and the second direction are perpendicular to each other, and the first value is different from the second value.

[0016] Among them, erasing the data of the flash memory page in the target flash memory block, and writing the test data to the flash memory page, determining the corresponding erase time and write time, which includes: erasing the data in the flash memory block at a preset temperature; reading the erased flash memory block, and counting the number of unerased data in the flash memory block; judging whether the number of unerased data is greater than a threshold value; if the number of unerased data is not greater than the threshold value, determining that the flash memory block is the target flash memory block.

[0017] The step of erasing the data in the flash memory block includes: erasing the data in the flash memory block in an SLC mode.

[0018] Among them, reading the erased flash memory block and counting the number of unerased data in the flash memory block includes: reading the erased flash memory block through the SLC mode, and counting the number of unerased data as a first number; judging whether the number of unerased data is greater than a threshold, including: judging whether the first number is greater than a first threshold; if the number of unerased data is not greater than the threshold, determining the flash memory block as a target flash memory block, including: if the first number is not greater than the first threshold, determining the flash memory block as a target flash memory block.

[0019] The step of reading the erased flash memory block and counting the number of unerased data in the flash memory block further includes: reading the erased flash memory block in a TLC mode and counting the number of unerased data as a second number.

[0020] Among them, erasing the data of the flash memory page in the target flash memory block, and writing the test data to the flash memory page, determining the corresponding erasing time and writing time, and also including: if the first number is greater than the first threshold, judging whether the second number is greater than the second threshold; if the second number is greater than the second threshold, judging whether the second number is greater than the third threshold; the third threshold is the judgment threshold of the defective block; if the second number is not greater than the third threshold, determining that the flash memory block is a defective block; if the second number is greater than the third threshold, determining that the flash memory block is a bad block.

[0021] To solve the above technical problems, the second technical solution adopted in this application is: to provide a terminal, which includes a memory, a processor, and a computer program stored in the memory and running on the processor, and the processor is used to execute program data to implement the steps in the above flash memory particle screening method.

[0022] In order to solve the above technical problems, the third technical solution adopted in the present application is: to provide a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps in the above flash memory particle screening method are implemented.

[0023] The beneficial effects of the present application are as follows: different from the prior art, a flash memory particle screening method, a terminal and a computer-readable storage medium are provided, and the flash memory particle screening method includes: erasing the data of the flash memory page in the target flash memory block, and writing the test data to the flash memory page, determining the corresponding erasing time and writing time; reading the test data stored in the flash memory page, and determining the bit error rate of the flash memory page; determining the first judgment result of the flash memory page based on the bit error rate; determining the second judgment result of the flash memory page based on the erasing time and writing time; distinguishing the target flash memory block according to the first judgment result and the second judgment result of the flash memory page contained in the target flash memory block. The present application not only judges whether the flash memory page in the target flash memory block is qualified by the error bit rate to obtain the first judgment result, but also uses the erasing time and the writing time as the judgment conditions of whether the flash memory page in the target flash memory block is qualified to obtain the second judgment result, and evaluates the flash memory page by multiple judgment conditions, thereby reducing the problem of misjudgment of the flash memory page caused by the characteristics of the particle disturbance, edge effect, etc. of the target flash memory block, thereby improving the screening accuracy of the target flash memory block, and making the screening result of the target flash memory block more reliable. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a schematic diagram of the process of the flash memory particle screening method provided by the present application;

[0025] Figure 2 It is a flow chart of a specific embodiment of the flash memory particle screening method provided by the present application;

[0026] Figure 3It is a schematic diagram of the test data format provided by this application;

[0027] Figure 4 is a schematic block diagram of an implementation scheme of a terminal provided by the present application;

[0028] Figure 5 It is a schematic block diagram of an embodiment of a computer-readable storage medium provided by the present application. DETAILED DESCRIPTION

[0029] The scheme of the embodiment of the present application is described in detail below in conjunction with the drawings of the specification.

[0030] In the following description, for the purpose of explanation rather than limitation, specific details such as specific system structures, interfaces, and technologies are provided to facilitate a thorough understanding of the present application.

[0031] The term "and / or" in this article is only a description of the association relationship of the associated objects, indicating that there can be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship. In addition, "many" in this article means two or more than two.

[0032] In order to enable those skilled in the art to better understand the technical solution of the present application, a flash memory particle screening method provided by the present application is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0033] See also Figure 1 , Figure 1 1 is a flow chart of a flash memory particle screening method provided in the present application. In the present embodiment, a flash memory particle screening method is provided, and the flash memory particle screening method specifically comprises the following steps.

[0034] S11: Erasing data of a flash memory page in a target flash memory block, and writing test data to the flash memory page, and determining corresponding erasing time and writing time.

[0035] Specifically, at a preset temperature, data in a flash memory block is erased. The data in the flash memory block is erased in a single-level cell (SLC) mode. The erased flash memory block is read, and the number of unerased data in the flash memory block is counted; it is determined whether the number of unerased data is greater than a threshold; if the number of unerased data is not greater than the threshold, the flash memory block is determined to be a target flash memory block.

[0036] In a specific embodiment, the erased flash memory block is read in SLC mode, and the number of unerased data is counted as a first number; it is determined whether the first number is greater than a first threshold; if the first number is not greater than the first threshold, the flash memory block is determined to be a target flash memory block. In an optional embodiment, it is also necessary to read the erased flash memory block in TLC mode, and the number of unerased data is counted as a second number. If the first number is greater than the first threshold, it is determined whether the second number is greater than the second threshold; if the second number is greater than the second threshold, it is determined whether the second number is greater than the third threshold; the third threshold is the threshold for determining a defective block; if the second number is not greater than the third threshold, the flash memory block is determined to be a defective block; if the second number is greater than the third threshold, the flash memory block is determined to be a bad block.

[0037] In one embodiment, the data of the flash memory page in the target flash memory block is erased in SLC mode, and the flash memory page of the erased data in the target flash memory block is written in TLC mode. The test data includes a first value and a second value, the first value and the second value are alternately arranged along a first direction and a second direction, the first direction and the second direction are perpendicular to each other, and the first value is different from the second value.

[0038] S12: Read the test data stored in the flash memory page to determine the bit error rate of the flash memory page.

[0039] Specifically, test data stored in a flash memory page is read in the TLC mode to determine a bit error rate of the flash memory page.

[0040] S13: Determine a first determination result of the flash memory page based on the bit error rate; and determine a second determination result of the flash memory page based on the erase time and the write time.

[0041] Specifically, it is determined whether the bit error rate is greater than a bit error rate threshold; if the bit error rate is not greater than the bit error rate threshold, it is determined that the first determination result of the flash memory page is qualified.

[0042] If the bit error rate is greater than the bit error rate threshold, the first determination result of the flash memory page is determined to be unqualified. Determine whether the erase time of the flash memory page is greater than the erase time threshold, and whether the write time of the flash memory page is greater than the write time threshold; if the erase time of the flash memory page is not greater than the erase time threshold, and the write time of the flash memory page is not greater than the write time threshold, then determine that the second determination result of the flash memory page is qualified; if the erase time of the flash memory page is greater than the erase time threshold, or the write time of the flash memory page is greater than the write time threshold, then determine that the second determination result of the flash memory page is unqualified.

[0043] If the bit error rate is greater than the bit error rate threshold, the first determination result of the flash memory page is determined to be unqualified. Determine whether the erase time of the flash memory page is less than the erase time threshold, and whether the write time of the flash memory page is less than the write time threshold; if the erase time of the flash memory page is less than the erase time threshold, and the write time of the flash memory page is less than the write time threshold, then determine that the second determination result of the flash memory page is qualified; if the erase time of the flash memory page is not less than the erase time threshold, or the write time of the flash memory page is not less than the write time threshold, then determine that the second determination result of the flash memory page is unqualified.

[0044] S14: Distinguishing the target flash memory block according to the first determination result and the second determination result that the target flash memory block includes a flash memory page.

[0045] Specifically, if the first determination results and the second determination results of all flash memory pages included in the target flash memory block are both qualified, the target flash memory block is determined to be a good block; if the first determination results and the second determination results of all flash memory pages included in the target flash memory block are both unqualified, the target flash memory block is determined to be a bad block; if the first determination results and the second determination results of the flash memory pages included in the target flash memory block are inconsistent, the target flash memory block is determined to be a defective block. In an optional embodiment, it is determined whether the number of flash memory pages included in the target flash memory block that are inconsistent with the first determination results and the second determination results exceeds a preset value; if the number of flash memory pages included in the target flash memory block that are inconsistent with the first determination results and the second determination results exceeds a preset value, the target flash memory block is determined to be a defective block.

[0046] The flash memory particle screening method provided in this embodiment includes: erasing the data of the flash memory page in the target flash memory block, and writing the test data to the flash memory page, determining the corresponding erasing time and writing time; reading the test data stored in the flash memory page, determining the bit error rate of the flash memory page; determining the first judgment result of the flash memory page based on the bit error rate; determining the second judgment result of the flash memory page based on the erasing time and writing time; distinguishing the target flash memory block according to the first judgment result and the second judgment result of the flash memory page contained in the target flash memory block. The present application not only judges whether the flash memory page in the target flash memory block is qualified by the error bit rate to obtain the first judgment result, but also uses the erasing time and the writing time as the judgment conditions of whether the flash memory page in the target flash memory block is qualified to obtain the second judgment result. The flash memory page is evaluated by multiple judgment conditions, which reduces the problem of misjudgment of the flash memory page caused by the characteristics of the particle disturbance, edge effect, etc. of the target flash memory block, thereby improving the screening accuracy of the target flash memory block, making the screening result of the target flash memory block more reliable.

[0047] See also Figure 2 , Figure 2This is a flow chart of a specific embodiment of a flash memory particle screening method provided by the present application. This embodiment provides a flash memory particle screening method, which specifically includes the following steps.

[0048] S201: Erasing data in a flash memory block at a preset temperature.

[0049] Specifically, at a preset temperature, the data in the flash memory block is erased in SLC mode. The preset temperature can be set according to actual conditions or can be set by oneself. The data in the flash memory block can be original data or written and saved data. The display of the data saved in the flash memory page of the flash memory block is 0, and the display of no data saved is 1. Erasing the data in the flash memory block is to erase the saved data in the flash memory page of the flash memory block, that is, to flip the 0 displayed in the flash memory page to 1.

[0050] S202: Read the erased flash memory block and count the number of unerased data in the flash memory block.

[0051] Specifically, in order to determine whether the flash memory block is a good block, the flash memory block after erasure is read through the SLC mode, and the number of unerased data is counted as the first number. In a specific embodiment, the number of 0s in the flash memory block after erasure is read through the SLC mode is the first number. In an optional embodiment, in order to further determine the degree of damage to the flash memory block, the flash memory block after erasure is read through the TLC mode, and the number of unerased data is counted as the second number. In a specific embodiment, the number of 0s in the flash memory block after erasure is read through the TLC mode is the second number. Through this step, the number of unerased data in the flash memory block can be counted, which facilitates the determination of whether the flash memory block is a good block.

[0052] S203: Determine whether the first number is greater than a first threshold.

[0053] Specifically, it is determined whether the first number is greater than a first threshold value. The first threshold value is a threshold value for determining a good block, and the first threshold value is set by the particle analysis team based on experience.

[0054] If the first number is greater than the first threshold, indicating that the flash memory block is not a good block, then jump directly to step S204; if the first number is not greater than the first threshold, it is preliminarily determined that the flash memory block is a good block, then jump directly to step S206.

[0055] S204: Determine whether the second number is greater than a second threshold.

[0056] Specifically, if the first number is greater than the first threshold, it indicates that the flash memory block is not a good block. In order to further distinguish the flash memory blocks that are not good blocks in more detail, it is determined whether the second number is greater than the second threshold, which represents the judgment threshold of good blocks and is set by the particle analysis team based on experience.

[0057] If the second number is greater than the second threshold, jump directly to step S205; if the second number is not greater than the second threshold, jump directly to step S206.

[0058] S205: Determine whether the second number is greater than a third threshold.

[0059] Specifically, if the second number is greater than the second threshold, it indicates that the flash memory block is not a good block, and then it is determined whether the second number is greater than a third threshold; the third threshold is a threshold for determining a defective block.

[0060] The third threshold is related to the second threshold, as shown in Formula 1.

[0061] Ztlc'=Ztlc*ε (Formula 1)

[0062] Wherein: Ztlc' represents the third threshold, Ztlc represents the second threshold, ε is a floating parameter, generally greater than 1, and is set by the particle analysis team based on experience.

[0063] If the second number is greater than the second threshold and greater than the third threshold, jump directly to step S207; if the second number is greater than the second threshold and not greater than the third threshold, jump directly to step S208.

[0064] S206: Preliminarily determine that the flash memory block is a target flash memory block.

[0065] Specifically, if the first number is not greater than the first threshold, or the second number is not greater than the second threshold, the flash memory block is preliminarily determined to be a good block, and the flash memory block is determined to be the target flash memory block. Directly jump to step S209.

[0066] S207: Preliminarily determine that the flash memory block is a bad block.

[0067] Specifically, if the second number is greater than the second threshold and greater than the third threshold, it indicates that the number of unerased data in the flash memory block is greater than the number of unerased data in the defective block, and the flash memory block is determined to be a bad block. The flash memory blocks determined to be bad blocks are screened out.

[0068] S208: Preliminarily determine that the flash memory block is a defective block.

[0069] Specifically, if the second number is greater than the second threshold value and not greater than the third threshold value, it indicates that the number of unerased data in the flash memory block is greater than the number of unerased data in the good block and not greater than the determination threshold of the defective block, and the flash memory block is determined to be a defective block. The flash memory blocks determined to be defective blocks are screened out.

[0070] S209: Erasing the data of the flash memory page in the target flash memory block, and writing the test data to the flash memory page, and determining the corresponding erasing time and writing time.

[0071] Specifically, the data of the flash memory page in the target flash memory block is erased in SLC mode.

[0072] In order to increase the disturbance to the target flash memory block, the target flash memory block that seems normal in the early stage but has a reliability far worse than other normal flash memory blocks due to the wear and tear of its service life is exposed. The test data is set to a "chessboard" format. The test data includes a first value and a second value. The first value and the second value are alternately set along a first direction and a second direction. The first direction and the second direction are perpendicular to each other, and the first value is different from the second value. The test data consists of two types of data, B and Ax, where x is a positive integer. Ax represents a random number; B represents 0, such as Figure 3 As shown, Figure 3 The first value is surrounded by the second value, and the second value is surrounded by the first value. Such a data format can achieve interference stimulation of the target flash memory block, thereby exposing more unreliable factors of the target flash memory block.

[0073] The flash memory page of the erased data in the target flash memory block is written in TLC mode, and the test data is written to the target flash memory block of the erased data. If a write failure occurs, the target flash memory block is directly determined to be a bad block.

[0074] In a specific embodiment, when writing test data in a flash memory page of a target flash memory block, the sum of write times of three consecutive flash memory pages is recorded, and the maximum sum of write times of three consecutive flash memory pages in the target flash memory block is determined.

[0075] S210: Read test data stored in the flash memory page to determine a bit error rate of the flash memory page.

[0076] Specifically, in the TLC mode, test data stored in a flash memory page of a target flash memory block is read to determine a bit error rate of the flash memory page.

[0077] S211: Determine whether the bit error rate is greater than a bit error rate threshold.

[0078] Specifically, if the bit error rate of the flash memory page is not greater than the bit error rate threshold, it indicates that the bit error rate of the flash memory page is less than or equal to the bit error rate of the qualified flash memory page, and then jump directly to step S212; if the bit error rate of the flash memory page is greater than the bit error rate, it indicates that the bit error rate of the flash memory page is greater than the bit error rate of the qualified flash memory page, and then jump directly to step S213.

[0079] S212: The first determination result of the flash memory page is qualified.

[0080] Specifically, if the bit error rate is not greater than the bit error rate threshold, it indicates that the bit error rate of the flash memory page is less than or equal to the bit error rate of the qualified flash memory page, and the first determination result of the flash memory page is determined to be qualified. Jump directly to step S214.

[0081] S213: The first determination result of the flash memory page is unqualified.

[0082] Specifically, if the bit error rate is greater than the bit error rate threshold, it indicates that the bit error rate of the flash memory page is greater than the bit error rate of a qualified flash memory page, and the first determination result of the flash memory page is determined to be unqualified. Jump directly to step S215.

[0083] S214: Determine whether the erasing time of the flash memory page is greater than the erasing time threshold, and whether the writing time of the flash memory page is greater than the writing time threshold.

[0084] In order to further improve the detection accuracy, based on the original judgment based solely on the number of error flips, the judgment dimensions of erase time and write time are added to reduce the occurrence of misjudgment caused by disturbance of the target flash block or boundary effect, and improve the judgment accuracy of the target flash block. Specifically, if the bit error rate is not greater than the bit error rate threshold, it indicates that the first judgment result of the flash page is qualified, then it is judged whether the erase time of the flash page is greater than the erase time threshold, and whether the write time of the flash page is greater than the write time threshold.

[0085] If the erase time of the flash memory page is not greater than the erase time threshold, and the write time of the flash memory page is not greater than the write time threshold, then jump directly to step S216; if the erase time of the flash memory page is greater than the erase time threshold, or the write time of the flash memory page is greater than the write time threshold, then jump directly to step S217.

[0086] S215: Determine whether the erasing time of the flash memory page is less than the erasing time threshold, and whether the writing time of the flash memory page is less than the writing time threshold.

[0087] Specifically, if the bit error rate is greater than the bit error rate threshold, it indicates that the flash memory page is preliminarily judged to be unqualified; in order to further improve the detection accuracy, it is determined whether the erase time of the flash memory page is less than the erase time threshold, and whether the write time of the flash memory page is less than the write time threshold.

[0088] If the erase time of the flash memory page is not less than the erase time threshold, or the write time of the flash memory page is not less than the write time threshold, jump directly to step S217; if the erase time of the flash memory page is less than the erase time threshold, and the write time of the flash memory page is less than the write time threshold, jump directly to step S216.

[0089] S216: The second determination result of the flash memory page is qualified.

[0090] Specifically, if the erase time of the flash memory page is not greater than the erase time threshold, and the write time of the flash memory page is not greater than the write time threshold; or if the erase time of the flash memory page is less than the erase time threshold, and the write time of the flash memory page is less than the write time threshold, the second judgment result of the flash memory page is determined to be qualified.

[0091] S217: The second determination result of the flash memory page is unqualified.

[0092] Specifically, if the erase time of the flash memory page is greater than the erase time threshold, or the write time of the flash memory page is greater than the write time threshold, the second determination result of the flash memory page is determined to be unqualified. If the erase time of the flash memory page is not less than the erase time threshold, or the write time of the flash memory page is not less than the write time threshold, the second determination result of the flash memory page is determined to be unqualified.

[0093] S218: Determine whether all flash memory pages in the target flash memory block have been detected.

[0094] Specifically, if all the flash memory pages in the target flash memory block have been detected, the process directly jumps to step S219; if there are flash memory pages in the target flash memory block that have not been detected, the process directly jumps to step S210.

[0095] S219: Differentiate the target flash memory block based on the first determination result and the second determination result of the flash memory pages included in the target flash memory block.

[0096] Specifically, based on the bit error rate of the flash memory page, a first determination result of the flash memory page included in the target flash memory block is determined, and based on the erase time and write time of the flash memory page, a second determination result of the flash memory page is determined. Based on the consistency of the first determination result and the second determination result, the target flash memory block is distinguished. The misjudgment of the target flash memory block due to the disturbance of the particles, the edge effect and other characteristics is reduced.

[0097] S220: If the first determination result and the second determination result of all the flash memory pages included in the target flash memory block are both qualified, the target flash memory block is determined to be a good block.

[0098] Specifically, when the first judgment result and the second judgment result of the flash memory page are the same and are both judged to be qualified, it is determined whether the first judgment result and the second judgment result of all the flash memory pages included in the target flash memory block are both judged to be qualified. If the first judgment result and the second judgment result of all the flash memory pages included in the target flash memory block are both judged to be qualified, the target flash memory block is determined to be a good block.

[0099] S221: If the first determination result and the second determination result of all the flash memory pages included in the target flash memory block are both unqualified, the target flash memory block is determined to be a bad block.

[0100] Specifically, when the first judgment result and the second judgment result of the flash memory page are the same and are both judged to be unqualified, it is determined whether the first judgment result and the second judgment result of all the flash memory pages included in the target flash memory block are both judged to be unqualified. If the first judgment result and the second judgment result of all the flash memory pages included in the target flash memory block are both judged to be unqualified, the target flash memory block is determined to be a bad block.

[0101] S222: If the first determination result and the second determination result of the flash memory pages included in the target flash memory block are inconsistent, then the target flash memory block is determined to be a defective block.

[0102] Specifically, if the first determination result and the second determination result of the flash memory page included in the target flash memory block are inconsistent, the target flash memory block is determined to be a defective block. In an optional embodiment, it is determined whether the number of flash memory pages included in the target flash memory block that are inconsistent with the first determination result and the second determination result exceeds a preset value. If the number of flash memory pages included in the target flash memory block that are inconsistent with the first determination result and the second determination result is greater than a preset value, the target flash memory block is determined to be a defective block, and the target flash memory block can be distinguished without having to detect all the flash memory pages included in the target flash memory block.

[0103] The flash memory particle screening method provided in this embodiment includes: erasing the data of the flash memory page in the target flash memory block, and writing the test data to the flash memory page, determining the corresponding erasing time and writing time; reading the test data stored in the flash memory page, determining the bit error rate of the flash memory page; determining the first judgment result of the flash memory page based on the bit error rate; determining the second judgment result of the flash memory page based on the erasing time and writing time; distinguishing the target flash memory block according to the first judgment result and the second judgment result of the flash memory page contained in the target flash memory block. The present application not only judges whether the flash memory page in the target flash memory block is qualified by the error bit rate to obtain the first judgment result, but also uses the erasing time and the writing time as the judgment conditions of whether the flash memory page in the target flash memory block is qualified to obtain the second judgment result. The flash memory page is evaluated by multiple judgment conditions, which reduces the problem of misjudgment of the flash memory page caused by the characteristics of the particle disturbance, edge effect, etc. of the target flash memory block, thereby improving the screening accuracy of the target flash memory block, making the screening result of the target flash memory block more reliable.

[0104] See also Figure 4 , Figure 4 This is a schematic block diagram of a terminal implementation example provided by the present application. The terminal 70 in this implementation example includes: a processor 71, a memory 72, and a computer program stored in the memory 72 and executable on the processor 71. When the computer program is executed by the processor 71, the above-mentioned flash memory particle screening method is implemented. To avoid repetition, it is not described one by one here.

[0105] See also Figure 5, Figure 5 It is a schematic block diagram of an embodiment of a computer-readable storage medium provided by the present application.

[0106] A computer-readable storage medium 90 is also provided in an embodiment of the present application. The computer-readable storage medium 90 stores a computer program 901. The computer program 901 includes program instructions. The processor executes the program instructions to implement the flash memory particle screening method provided in the embodiment of the present application.

[0107] The computer-readable storage medium 90 may be an internal storage unit of the computer device of the aforementioned embodiment, such as a hard disk or memory of the computer device. The computer-readable storage medium 90 may also be an external storage device of the computer device, such as a plug-in hard disk, a smart memory card (Smart Media Card, SMC), a secure digital (Secure Digital, SD) card, a flash card (Flash Card), etc. equipped on the computer device.

[0108] The above are only implementation methods of the present application, and are not intended to limit the patent protection scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A flash memory particle screening method, characterized in that: The flash memory particle screening method comprises: Erasing data of a flash memory page in a target flash memory block, and writing test data to the flash memory page, and determining corresponding erasing time and writing time; reading the test data stored in the flash memory page to determine a bit error rate of the flash memory page; Determine a first determination result of the flash memory page based on the bit error rate; determine a second determination result of the flash memory page based on the erase time and the write time; Distinguishing the target flash memory block according to a first determination result and a second determination result that the target flash memory block includes the flash memory page; Wherein, determining the second determination result of the flash memory page based on the erase time and the write time includes: In response to the first determination result of the flash memory page being qualified, determining whether an erase time of the flash memory page is greater than an erase time threshold, and whether a write time of the flash memory page is greater than a write time threshold; If the erasing time of the flash memory page is not greater than the erasing time threshold, and the writing time of the flash memory page is not greater than the writing time threshold, it is determined that the second determination result of the flash memory page is qualified.

2. The flash memory particle screening method according to claim 1, characterized in that: The determining a first determination result of the flash memory page based on the bit error rate includes: Determining whether the bit error rate is greater than a bit error rate threshold; If the bit error rate is not greater than the bit error rate threshold, it is determined that the first determination result of the flash memory page is qualified.

3. The flash memory particle screening method according to claim 2, characterized in that: The determining a second determination result of the flash memory page based on the erasing time and the writing time further includes: If the erasing time of the flash memory page is greater than the erasing time threshold, or the writing time of the flash memory page is greater than the writing time threshold, the second determination result of the flash memory page is determined to be unqualified.

4. The flash memory particle screening method according to claim 2, characterized in that: The determining of the first determination result of the flash memory page based on the bit error rate further includes: If the bit error rate is greater than the bit error rate threshold, the first determination result of the flash memory page is determined to be unqualified.

5. The flash memory particle screening method according to claim 4, characterized in that: The determining a second determination result of the flash memory page based on the erasing time and the writing time further includes: In response to the first determination result of the flash memory page being unqualified, determining whether the erase time of the flash memory page is less than an erase time threshold, and whether the write time of the flash memory page is less than a write time threshold; If the erasure time of the flash memory page is less than the erasure time threshold, and the write time of the flash memory page is less than the write time threshold, determining that the second determination result of the flash memory page is qualified; If the erasing time of the flash memory page is not less than the erasing time threshold, or the writing time of the flash memory page is not less than the writing time threshold, the second determination result of the flash memory page is determined to be unqualified.

6. The flash memory particle screening method according to claim 5, characterized in that: The distinguishing the target flash memory block according to the first determination result and the second determination result that the flash memory page is included in the target flash memory block comprises: If the first determination result and the second determination result of all the flash memory pages included in the target flash memory block are both qualified, the target flash memory block is determined to be a good block.

7. The flash memory particle screening method according to claim 5, characterized in that: The distinguishing the target flash memory block according to the first determination result and the second determination result that the flash memory page is included in the target flash memory block comprises: If the first determination result and the second determination result of all the flash memory pages included in the target flash memory block are both unqualified, the target flash memory block is determined to be a bad block.

8. The flash memory particle screening method according to claim 5, characterized in that: The distinguishing the target flash memory block according to the first determination result and the second determination result that the flash memory page is included in the target flash memory block also includes: If the first determination result and the second determination result of the flash memory page included in the target flash memory block are inconsistent, it is determined that the target flash memory block is a defective block.

9. The flash memory particle screening method according to claim 8, characterized in that: If the first determination result and the second determination result of the flash memory page included in the target flash memory block are inconsistent, determining that the target flash memory block is a defective block includes: Determine whether the number of inconsistencies between the first determination result and the second determination result of the target flash memory block containing the flash memory page exceeds a preset value; If the number of the flash memory pages whose first determination result and the second determination result are inconsistent included in the target flash memory block exceeds a preset value, the target flash memory block is determined to be a defective block.

10. The flash memory particle screening method according to claim 1, characterized in that: Erasing data of a flash memory page in a target flash memory block, writing test data to the flash memory page, and determining corresponding erasing time and writing time include: Performing SLC mode erasing on the data of the flash memory page in the target flash memory block; Perform TLC mode data writing on the flash memory page of erased data in the target flash memory block.

11. The flash memory particle screening method according to claim 1, characterized in that: The test data includes a first value and a second value, the first value and the second value are alternately arranged along a first direction and a second direction, the first direction and the second direction are perpendicular to each other, and the first value is different from the second value.

12. The flash memory particle screening method according to claim 1, characterized in that: The step of erasing data of a flash memory page in a target flash memory block and writing test data to the flash memory page, and determining corresponding erasing time and writing time, comprises: Erasing data in the flash memory block at a preset temperature; Reading the flash memory block after erasure, and counting the number of unerased data in the flash memory block; Determining whether the number of the unerased data is greater than a threshold; If the number of the unerased data is not greater than the threshold, the flash memory block is determined to be the target flash memory block.

13. The flash memory particle screening method according to claim 12, characterized in that: Erasing the data in the flash memory block includes: The data in the flash memory block is erased in SLC mode.

14. The flash memory particle screening method according to claim 13, characterized in that: The step of reading the erased flash memory block and counting the number of unerased data in the flash memory block comprises: Reading the flash memory block after erasure through the SLC mode, and counting the number of the unerased data as the first number; The determining whether the number of the unerased data is greater than a threshold comprises: Determine whether the first number is greater than a first threshold; If the number of the unerased data is not greater than the threshold, determining the flash memory block as the target flash memory block comprises: If the first number is not greater than the first threshold, the flash memory block is determined to be the target flash memory block.

15. The flash memory particle screening method according to claim 14, characterized in that: The step of reading the erased flash memory block and counting the number of unerased data in the flash memory block further includes: The flash memory block after erasure is read in TLC mode, and the number of the unerased data is counted as the second number.

16. The flash memory particle screening method according to claim 15, characterized in that: The method further comprises erasing data of a flash memory page in a target flash memory block, writing test data to the flash memory page, and determining corresponding erasing time and writing time, and also comprising: If the first number is greater than the first threshold, determining whether the second number is greater than a second threshold; If the second number is greater than the second threshold, then determining whether the second number is greater than a third threshold; the third threshold is a threshold for determining a defective block; If the second number is not greater than the third threshold, determining that the flash memory block is a defective block; If the second number is greater than the third threshold, the flash memory block is determined to be a bad block.

17. A terminal, characterized in that: The terminal includes a memory, a processor, and a computer program stored in the memory and running on the processor, wherein the processor is used to execute program data to implement the steps in the flash memory particle screening method according to any one of claims 1 to 16.

18. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps in the flash memory particle screening method according to any one of claims 1 to 16 are implemented.

Images