High-power chip heat dissipation structure and preparation method thereof
By introducing heat dissipation components and heat exchangers on the front side of high-power chips and increasing the heat exchange area using microstructures, the problem of small heat exchange area between the chip and the cooling medium is solved, achieving efficient chip heat dissipation and meeting signal shielding requirements.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
- Filing Date
- 2021-11-23
- Publication Date
- 2026-06-09
AI Technical Summary
During the heat dissipation process of high-power chips, the effective heat exchange area of the heat diffusion layer and the cooling working fluid on the front of the chip is small, resulting in poor heat dissipation. The chip temperature rises sharply, affecting performance and potentially causing failure.
Heat dissipation components and heat exchangers are introduced on the front side of high-power chips. The heat exchange area between the chip and the heat dissipation components is increased through microstructures, and direct heat exchange is carried out using coolant, shortening the heat transfer path.
It improves the chip's heat dissipation capacity, ensuring that the chip temperature does not rise sharply, meeting signal shielding requirements, and achieving efficient heat dissipation.
Smart Images
Figure CN114256178B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of microelectronic heat dissipation technology, and in particular to a high-power chip heat dissipation structure and its fabrication method. Background Technology
[0002] With the development of semiconductor technology, the performance of semiconductor chips is constantly improving, and the power applied to the chips is also increasing. This leads to an increase in chip heat dissipation. If the heat generated by the chip cannot be dissipated in time, the chip temperature will rise sharply, seriously affecting the chip's performance and lifespan. At the same time, heat generation in the chip's heat-generating junction area is often uneven, resulting in uneven temperature distribution and large temperature gradients within the chip. This can create localized hot spots, affecting chip stability, and the thermal stress generated by the temperature gradient can reduce chip reliability. Many current high-power chips are designed for radio frequency (RF) applications, and RF signals pass through the chips. To prevent RF signals from being affected by external electromagnetic interference, appropriate shielding structures need to be designed to protect high-power chips.
[0003] Currently, heat dissipation methods for high-power chips include: fabricating metal heat sinks through micromachining, then coating the back of the high-power chip's semiconductor substrate with thermally conductive silver paste or other thermal interface materials, and finally bonding the metal heat sink to the underside of the semiconductor substrate using these materials. Heat generated by the chip is conducted to the heat sink through the semiconductor substrate and the thermal interface material, and the heat sink then exchanges heat with the environment, thus dissipating the heat generated by the chip and achieving a heat dissipation effect.
[0004] The heat dissipation method for high-power chips also includes: fabricating a semiconductor substrate with a microfluidic structure and a cover plate with a liquid inlet / outlet structure using semiconductor processing technology; bonding the semiconductor substrate with the microfluidic structure and the cover plate with the liquid inlet / outlet structure to realize a complete microfluidic channel with working fluid circulation capability; then coating the back of the high-power chip semiconductor substrate with an interface material such as thermally conductive silver paste; and using the thermal interface material to bond the microfluidic channel with a double-layer structure to the semiconductor substrate of the high-power chip. The heat generated by the chip is conducted to the microfluidic channel through the semiconductor substrate and the thermal interface material, and the microfluidic channel then exchanges heat with the cooling working fluid in the channel. The heat generated by the chip is dissipated through the circulation of the cooling working fluid, thus achieving the heat dissipation effect.
[0005] High-power chip heat dissipation methods also include: etching microchannels on the back of the high-power chip using semiconductor etching technology; fabricating inlet / outlet structures in another semiconductor substrate using semiconductor processing technology; and then bonding the semiconductor substrate containing the high-power chip to another semiconductor substrate with inlet / outlet structures to form an integrated chip with microchannels and inlet / outlet structures, consisting of a double-layer semiconductor substrate. Heat generated by the chip is conducted through the semiconductor substrate and then exchanged with the cooling medium in the microchannels. The flow of the cooling medium carries away the heat generated by the chip, achieving the desired heat dissipation effect.
[0006] However, the current heat dissipation methods for high-power chips all require heat to be conducted to the back of the chip for dissipation. The heat dissipation effect is severely affected by the thermal conductivity of the semiconductor substrate of the high-power chip. However, when using front-side heat dissipation, the effective heat exchange area between the chip and the cooling medium becomes one of the important factors affecting the heat dissipation effect. Typically, to meet the requirements of chip electrical connections, the heat diffusion layer fabricated on the front side of the high-power chip should be located within the area of the chip's electrical pins. This limits the area of the heat diffusion layer on the front side of the high-power chip due to the distribution of electrical pins on the chip. During the heat dissipation process, the heat diffusion layer on the front side of the chip directly exchanges heat with the cooling medium. Its size limitation further leads to the problem of a small effective heat exchange area between the chip and the cooling medium. This makes the microfluidic heat dissipation method unable to achieve its heat dissipation effect well. The heat generated by the chip cannot be dissipated and carried away in time, and will accumulate at the chip's heat-generating junction area, causing the chip temperature to rise sharply, seriously affecting the chip's performance or even causing the chip to fail. Summary of the Invention
[0007] The purpose of this invention is to provide a high-power chip heat dissipation structure and its fabrication method, in order to solve the problem that in the current heat dissipation process, the heat diffusion layer on the front of the chip and the cooling medium directly exchange heat. The size limitation of the cooling medium further leads to a small effective heat exchange area between the chip and the cooling medium, which makes the microfluidic heat dissipation method unable to achieve its heat dissipation effect well. The heat generated by the chip cannot be dissipated and carried away in time, and will accumulate at the heat-generating junction of the chip, causing the chip temperature to rise sharply, seriously affecting the chip performance or even causing the chip to fail.
[0008] In a first aspect, the present invention provides a high-power chip heat dissipation structure for use in the heat dissipation process of a high-power chip, the high-power chip heat dissipation structure comprising:
[0009] A heat dissipation component is located on the high-power chip, the heat dissipation component is bonded to the high-power chip, and the projection of the heat dissipation component on the high-power chip at least covers the heat-generating junction region of the device layer of the high-power chip, for dissipating the heat generated by the high-power chip;
[0010] A heat exchanger located between the high-power chip and the heat dissipation component is used to increase the heat dissipation area between the high-power chip and the heat dissipation component.
[0011] With the above technical solution, the coolant can be directed to the heat-generating junction area on the front of the high-power chip through the heat dissipation component, and the effective heat exchange area between the high-power chip and the heat dissipation component can be increased through the heat exchange component. This solves the problem of small effective heat exchange area between the high-power chip and the heat dissipation structure in the prior art, and improves the heat exchange capacity. Connecting the heat dissipation component to the heat exchange component allows the heat generated by the chip to be dissipated and carried away through the front of the chip, so that the heat-generating junction area of the high-power chip can directly exchange heat with the coolant. The heat generated by the chip is directly conducted to the coolant and then carried away by the circulation of the coolant, shortening the heat transfer path and improving the heat dissipation capacity of the chip, thus meeting the signal shielding requirements and heat dissipation requirements of the high-power chip.
[0012] In one possible implementation, the heat exchanger includes a heat exchange layer having a microstructure on one side surface facing the heat dissipation assembly.
[0013] In one possible implementation, the heat exchange layer has a bonding region and a non-bonded region on one side of the surface facing the heat dissipation component. The non-bonded region is disposed opposite to the heat-generating junction region of the device layer of the high-power chip. The microstructure is located in the non-bonded region, and the bonding region is located on the periphery of the non-bonded region for bonding with the heat dissipation component.
[0014] In one possible implementation, the heat dissipation structure further includes a bonding ring located in the bonding region for sealing the non-bonded region.
[0015] In one possible implementation, the microstructure includes multiple micro-protrusion substructures and / or multiple micro-recession substructures, wherein the cross-sectional shape of the multiple micro-protrusion substructures includes one or more of rectangles, semicircles, trapezoids, and triangles; and the cross-sectional shape of the multiple micro-recession substructures includes one or more of cuboids, semicircles, inverted trapezoids, and inverted triangles.
[0016] In one possible implementation, the heat dissipation component includes a cooling structure and an electrical connection component bonded together; the cooling structure has multiple coolant channels, each coolant channel including a connected inlet channel, a microchannel, and an outlet channel, and the microchannel is located on the front side of the high-power chip; the heat exchanger is located between the microchannel and the high-power chip.
[0017] During the operation of the high-power chip, the liquid inlet channel is used to introduce coolant into the microchannel, and the coolant passes through the heat exchanger to dissipate heat from the heat-generating junction area of the high-power chip through the coolant and the heat exchanger. The liquid outlet channel is used to discharge the coolant after it has passed through the microchannel.
[0018] One side of the electrical connection assembly is connected to the cooling structure, and the other side is electrically connected to the high-power chip.
[0019] In one possible implementation, the high-power chip includes a semiconductor substrate, and a device layer, a surface dielectric layer, and chip electrical pins located on both sides of the surface dielectric layer on the semiconductor substrate. The heat dissipation assembly includes a cooling structure and an electrical connection assembly. The pins of the adapter board circuit in the electrical connection assembly are connected one-to-one with the chip electrical pins. One side of the electrical connection assembly is connected to the cooling structure, and the other side is electrically connected to the high-power chip.
[0020] In a second aspect, the present invention also provides a method for fabricating a high-power chip heat dissipation structure, used to fabricate the high-power chip heat dissipation structure described in any of the first aspects, the method comprising:
[0021] A heat exchange component is fabricated on the surface of the high-power chip to prepare a heat dissipation assembly;
[0022] The heat dissipation component is bonded to the heat exchanger to obtain the high-power chip heat dissipation structure; the heat exchanger is used to accelerate the heat exchange between the high-power chip and the heat dissipation component; the heat exchanger is used to increase the heat dissipation area between the high-power chip and the heat dissipation component.
[0023] In one possible implementation, fabricating a heat exchanger on the surface of the high-power chip includes:
[0024] A thin metal layer is fabricated on the surface of the high-power chip;
[0025] The metal thin layer is planarized, and the surface microstructure is prepared in the non-bonded region on the planarized metal thin layer to obtain the heat exchanger.
[0026] In one possible implementation, the provision of a heat dissipation assembly above the front surface of the heat exchanger includes:
[0027] An electrical connection component and a cooling structure are fabricated to form a heat dissipation component including the cooling structure and the electrical connection component; one side of the electrical connection component in the heat dissipation component is connected to the cooling structure, and the other side is electrically connected to the high-power chip.
[0028] The beneficial effects of the method for preparing the high-power chip heat dissipation structure provided in the second aspect are the same as those of the high-power chip heat dissipation structure described in the first aspect or any possible implementation of the first aspect, and will not be repeated here. Attached Figure Description
[0029] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:
[0030] Figure 1 This illustration shows a schematic diagram of a high-power chip heat dissipation structure provided in an embodiment of this application;
[0031] Figure 2 A schematic flowchart of a method for fabricating a high-power chip heat dissipation structure according to an embodiment of this application is shown;
[0032] Figure 3 This illustration shows a process for fabricating a heat exchanger in a high-power chip according to an embodiment of this application.
[0033] Figure 4 A schematic diagram of the microstructure of a heat exchanger provided in an embodiment of this application is shown;
[0034] Figure 5 A schematic diagram of a process for preparing a cooling structure according to an embodiment of this application is shown.
[0035] Figure label:
[0036] 01-High-power chip; 02-Heat dissipation component; 03-Heat exchanger; 021-Cooling structure; 022-Electrical connection component; 031-Heat exchange layer; 032-Microstructure; 0211-Coolant channel; 0211a-Inlet channel; 0211b-Microchannel; 0211c-Outlet channel; 023-Surface bonding ring of heat dissipation structure; 011-Semiconductor substrate; 012-Device layer; 013-Surface dielectric layer; A-Heat junction region; X-Adapter board circuit; Y-Chip electrical pins; T-Microvia; 04-Heat dissipation substrate. Detailed Implementation
[0037] To facilitate a clear description of the technical solutions in the embodiments of the present invention, the terms "first" and "second" are used to distinguish identical or similar items with essentially the same function and effect. For example, the first threshold and the second threshold are merely used to distinguish different thresholds and do not limit their order. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or execution order, and that the terms "first" and "second" are not necessarily different.
[0038] It should be noted that in this invention, the terms "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in this invention should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of terms such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner.
[0039] In this invention, "at least one" refers to one or more, and "more than one" refers to two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can represent: a, b, c, a combination of a and b, a combination of a and c, a combination of b and c, or a, b, and c, where a, b, and c can be single or multiple.
[0040] Figure 1 This illustration shows a schematic diagram of a high-power chip heat dissipation structure according to an embodiment of this application, which is applied in the heat dissipation process of high-power chips, such as... Figure 1 As shown, the high-power chip heat dissipation structure includes:
[0041] A heat dissipation component 02 is located on the high-power chip 01, the heat dissipation component 02 is bonded to the high-power chip 01, and the projection of the heat dissipation component 02 on the high-power chip 01 at least covers the 012 heat-generating junction region A of the device layer of the high-power chip 01, for dissipating the heat generated by the high-power chip 01.
[0042] The heat exchange component 03 located between the high-power chip 01 and the heat dissipation component 02 is used to increase the heat dissipation area between the high-power chip 01 and the heat dissipation component 02.
[0043] In summary, the high-power chip heat dissipation structure provided in this application can guide the coolant to the heat-generating junction area on the front of the high-power chip through the heat dissipation component, and increase the effective heat exchange area between the high-power chip and the heat dissipation component through the heat exchanger. This solves the problem of small effective heat exchange area between the high-power chip and the heat dissipation structure in the prior art, improves the heat exchange capacity, and connects the heat dissipation component to the heat exchanger so that the heat generated by the chip is dissipated and carried away through the front of the chip. This allows the heat-generating junction area of the high-power chip to directly exchange heat with the coolant, so that the heat generated by the chip is directly conducted to the coolant and carried away by the circulation of the coolant. This shortens the heat transfer path, improves the heat dissipation capacity of the chip, and meets the signal shielding and heat dissipation requirements of the high-power chip.
[0044] Optional, such as Figure 1 As shown, the high-power chip includes a semiconductor substrate 011, a device layer 012, a surface dielectric layer 013 sequentially disposed on the semiconductor substrate 011, and chip electrical pins Y located on the device layer 012 and on both sides of the surface dielectric layer 013.
[0045] The heat dissipation component 02 includes a cooling structure 021 and an electrical connection component 022. The pins of the adapter board circuit X in the electrical connection component 022 are connected to the electrical pins Y of the chip in a one-to-one correspondence. One side of the electrical connection component 022 is connected to the cooling structure, and the other side is electrically connected to the high-power chip 01.
[0046] Optional, see Figure 1 The pins of the adapter board circuit X are connected one-to-one with the electrical pins of the chip Y.
[0047] The surface dielectric layer can provide shielding and protection for the device.
[0048] Optionally, the material of the semiconductor substrate may include silicon, silicon carbide, diamond, or sapphire, etc., and this application embodiment does not specifically limit this.
[0049] Optional, see Figure 1 The heat exchanger 03 includes a heat exchange layer 031, and the surface of the heat exchange layer 031 facing the heat dissipation assembly 02 has a microstructure 032.
[0050] Optional, see Figure 1 The heat exchange layer 031 has a bonding region and a non-bonded region on the side facing the heat dissipation component 02. The non-bonded region is disposed opposite to the heat-generating junction region A of the device layer 012 of the high-power chip 01. The microstructure 032 is located in the non-bonded region, and the bonding region is located on the periphery of the non-bonded region for bonding with the heat dissipation component 02.
[0051] Optionally, the heat exchanger has good thermal conductivity and can be a thin metal layer to increase the heat dissipation area between the high-power chip 01 and the heat dissipation component 02, that is, to increase the effective heat exchange area between the high-power chip and the heat dissipation component.
[0052] Optionally, the material of the metal thin layer may include copper, gold, aluminum, silver, etc. This application embodiment does not specifically limit this, and adjustments can be made according to the actual application scenario.
[0053] Optionally, the microstructure may include multiple micro-protrusion substructures and / or multiple micro-recessed substructures. The cross-sectional shape of the multiple micro-protrusion substructures includes one or more of rectangles, semicircles, trapezoids, and triangles; the cross-sectional shape of the multiple micro-recessed substructures includes one or more of cuboids, semicircles, inverted trapezoids, and inverted triangles. In this application embodiment, the cross-sectional shape and size of the microstructure are not specifically limited, and can be marked and adjusted according to the actual application scenario.
[0054] Optionally, the heat dissipation component 02 includes a cooling structure 021 and an electrical connection component 022 bonded together; the cooling structure 021 forms a plurality of coolant channels 0211, each coolant channel 0211 including a connected inlet channel 0211a, a microchannel 0211b and an outlet channel 0211c, and the microchannel 0211b is located on the front side of the high-power chip 01;
[0055] During the operation of the high-power chip 01, the liquid inlet channel 0211a is used to introduce coolant into the microchannel 0211b to dissipate heat from the heat-generating junction area A of the high-power chip 01, and the liquid outlet channel 0211c is used to export the coolant after passing through the microchannel 0211b.
[0056] One side of the electrical connection component 022 is connected to the cooling structure, and the other side is electrically connected to the high-power chip 01.
[0057] Optional, see Figure 2 The heat dissipation component 02 further includes a surface bonding ring 023 of the heat dissipation structure. The bonding ring 023 is located in the bonding area and is used to seal the non-bonding area to form a sealed microchannel, preventing the coolant from seeping from the cooling structure into the electrical connection component 022.
[0058] The surface bonding ring of the heat dissipation structure can be a sealing isolation ring or other sealing isolation devices. This application does not specifically limit its application; adjustments can be made based on the actual application scenario. The sealing isolation ring forms a sealed microchannel, preventing coolant from seeping out and ensuring the stability and reliability of the electrical properties of nearby electrical structures.
[0059] In this application, the microchannel can be zigzag-shaped, which can shorten the distance the coolant flows through, allowing the coolant to flow through a region on the front side of the high-power chip with a size on the order of micrometers, including the aforementioned heat-generating junction region.
[0060] Optionally, the liquid inlet channel includes a liquid inlet, and the liquid outlet channel includes a liquid outlet, with the liquid inlet and the liquid outlet located on the side of the heat dissipation component away from the front of the high-power chip.
[0061] Optional, see Figure 2 The high-power chip also includes a chip electrical pin Y, which is located in the surface dielectric layer.
[0062] Optional, see Figure 2 The electrical connection component 022 includes an adapter board circuit X, and the pins in the adapter board circuit X are electrically connected to the electrical pins Y of the chip in a one-to-one correspondence.
[0063] The adapter board circuit is used to connect to the pins of the high-power chip, forming a complete electrical connection for the power supply and signal input of the high-power chip. The number of pins on the adapter board circuit corresponds to the number of pins on the high-power chip, and the relative positions of the pins on the adapter board circuit correspond to the relative positions of the electrical pins on the high-power chip.
[0064] Optionally, the materials used to make the cooling structure may include semiconductor materials such as silicon, glass, epoxy glass cloth laminate (FR4), plexiglass, metallic copper, and metallic copper-molybdenum alloy, etc. This application does not specifically limit these materials.
[0065] In summary, the high-power chip heat dissipation structure provided in this application can guide the coolant to the heat-generating junction area on the front of the high-power chip through the heat dissipation component, and increase the effective heat exchange area between the high-power chip and the heat dissipation component through the heat exchanger. This solves the problem of small effective heat exchange area between the high-power chip and the heat dissipation structure in the prior art, improves the heat exchange capacity, and connects the heat dissipation component to the heat exchanger so that the heat generated by the chip is dissipated and carried away through the front of the chip. This allows the heat-generating junction area of the high-power chip to directly exchange heat with the coolant, so that the heat generated by the chip is directly conducted to the coolant and carried away by the circulation of the coolant. This shortens the heat transfer path, improves the heat dissipation capacity of the chip, and meets the signal shielding and heat dissipation requirements of the high-power chip.
[0066] Figure 2 This illustration shows a flowchart of another method for fabricating a high-power chip heat dissipation structure according to an embodiment of this application, used for fabrication. Figure 1 The high-power chip heat dissipation structure, such as Figure 2 As shown, the method includes:
[0067] Step 101: Fabricate a heat exchange component on the surface of the high-power chip to prepare a heat dissipation assembly.
[0068] Optionally, the heat exchanger has good thermal conductivity and can be a thin metal layer to increase the heat dissipation area between the high-power chip 01 and the heat dissipation component 02, that is, to increase the effective heat exchange area between the high-power chip and the heat dissipation component.
[0069] Optionally, the material of the metal thin layer may include copper, gold, aluminum, silver, etc. This application embodiment does not specifically limit this, and adjustments can be made according to the actual application scenario.
[0070] Optional, see Figure 1 The heat exchanger 03 includes a heat exchange layer 031, and the surface of the heat exchange layer 031 facing the heat dissipation assembly 02 has a microstructure 032.
[0071] Optional, see Figure 1 The heat exchange layer 031 has a bonding region and a non-bonded region on the side facing the heat dissipation component 02. The non-bonded region is disposed opposite to the heat-generating junction region A of the device layer 012 of the high-power chip 01. The microstructure 032 is located in the non-bonded region, and the bonding region is located on the periphery of the non-bonded region for bonding with the heat dissipation component 02.
[0072] Optionally, the heat exchanger has good thermal conductivity and can be a thin metal layer to increase the heat dissipation area between the high-power chip 01 and the heat dissipation component 02, that is, to increase the effective heat exchange area between the high-power chip and the heat dissipation component.
[0073] Optionally, the material of the metal thin layer may include copper, gold, aluminum, silver, etc. This application embodiment does not specifically limit this, and adjustments can be made according to the actual application scenario.
[0074] In this application, a thin metal layer can be fabricated on the surface of the high-power chip; the thin metal layer is planarized, and the surface microstructure is prepared in the non-bonded region on the planarized thin metal layer to obtain the heat exchanger.
[0075] The heat exchange layer in the bonding region is used to maintain the flatness of the high-power chip surface, ensuring that the bonding between the heat exchange element and the heat dissipation component can be achieved.
[0076] Figure 3 This illustration shows a process for fabricating a heat exchanger in a high-power chip according to an embodiment of this application. Figure 3 As shown in (a), a high-power chip 01 including a semiconductor substrate 011 is provided, further as... Figure 3As shown in (b), a heat exchange layer 031 is fabricated in the heat exchange component 03 on the surface of the high-power chip 01. The heat exchange layer 031 includes a bonding region and an unbonded region. See [reference needed]. Figure 3 (c) The heat exchange layer 031 in the heat exchanger can be flattened, see [reference]. Figure 3 (d) The surface microstructure 032 is prepared on the unbonded region of the heat exchange layer 031 after planarization treatment to obtain the heat exchange component.
[0077] Optionally, the microstructure may include multiple micro-protrusion substructures and / or multiple micro-recessed substructures. The cross-sectional shape of the multiple micro-protrusion substructures includes one or more of rectangles, semicircles, trapezoids, and triangles; the cross-sectional shape of the multiple micro-recessed substructures includes one or more of cuboids, semicircles, inverted trapezoids, and inverted triangles. In this application embodiment, the cross-sectional shape and size of the microstructure are not specifically limited, and can be marked and adjusted according to the actual application scenario.
[0078] Example, Figure 4 This illustration shows a schematic diagram of the microstructure of a heat exchanger according to an embodiment of this application, as shown below. Figure 4 As shown in (a), the cross-sectional shape of the plurality of micro-protrusion substructures 032A includes rectangles; as Figure 4 As shown in (b), the cross-sectional shape of the plurality of micro-protrusion substructures 032A is semi-circular, as... Figure 4 As shown in (c), the cross-sectional shape of the plurality of micro-protrusion substructures 032A is triangular, as follows: Figure 4 As shown in (d), the cross-sectional shape of the plurality of micro-indentation substructures 032B is semi-circular.
[0079] Optionally, the method for fabricating the heat exchange layer may include magnetron sputtering, evaporation coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), etc. The embodiments of this application do not specifically limit this, and specific adjustments can be made according to the actual application scenario.
[0080] The methods for fabricating the microstructure on the surface of the heat exchange layer may include magnetron sputtering, evaporation coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), chemical etching, laser etching, plasma etching, etc. The embodiments of this application do not specifically limit these methods, and specific adjustments can be made according to the actual application scenario.
[0081] Step 102: Bond the heat dissipation component to the heat exchanger to obtain the high-power chip heat dissipation structure.
[0082] The heat exchanger is used to accelerate the heat exchange between the high-power chip and the heat dissipation component; the heat exchanger is used to increase the heat dissipation area between the high-power chip and the heat dissipation component.
[0083] In this application, the heat exchanger with surface microstructure on the front side of the high-power chip and the heat dissipation assembly with circuitry are bonded together, so that the surface circuitry of the high-power chip and the heat dissipation assembly are electrically interconnected, and a sealed microchannel is formed, so that the cooling medium can flow through the front side of the high-power chip and achieve heat exchange between the heat exchanger with surface microstructure on the front side of the high-power chip and the high-power chip.
[0084] The heat dissipation component includes electrical connection components and a cooling structure. Therefore, the implementation process of step 102 above may include:
[0085] Sub-step 1021: Prepare the electrical connection assembly and the cooling structure to form a heat dissipation assembly including the cooling structure and the electrical connection assembly.
[0086] In this application, the fabrication of the electrical connection assembly and the cooling structure includes the following sub-steps:
[0087] Sub-step A1: Prepare the cooling structure.
[0088] Sub-step A2: Fabricate the electrical connection assembly on the side of the cooling structure near the high-power chip.
[0089] Sub-step A3: Bond the cooling structure and the electrical connection assembly to form the liquid inlet channel, the liquid outlet channel, and the microchannel.
[0090] In this application, the specific implementation process of sub-steps A1 and A2 above, namely, fabricating the first cooling component and fabricating the electrical connection component on the side of the first cooling component close to the high-power chip, may include:
[0091] Sub-step B1: Provide a heat dissipation substrate including a first side and a second side opposite to each other.
[0092] Example, Figure 5 This application provides a schematic diagram illustrating a process for fabricating a cooling structure, as shown in the embodiment. Figure 5 As shown in (a), a heat dissipation substrate 04 is first provided, comprising a first surface and a second surface opposite to each other.
[0093] Sub-step B2: Prepare a surface bonding ring and a transition board circuit for a heat dissipation structure on the heat dissipation substrate from the first surface.
[0094] The adapter board circuit is used to connect to the pins of the high-power chip, forming a complete electrical connection for the power supply and signal input of the high-power chip. The number of pins on the adapter board circuit corresponds to the number of pins on the high-power chip, and the relative positions of the pins on the adapter board circuit correspond to the relative positions of the electrical pins on the high-power chip.
[0095] For example, see Figure 5 (b) A heat dissipation structure surface bonding ring 023 and an adapter circuit X are fabricated on the heat dissipation substrate 04.
[0096] Optionally, the surface bonding ring and adapter circuit of the above-mentioned heat dissipation structure can be prepared by methods such as magnetron sputtering, wet chemical electroplating, evaporation coating, chemical vapor deposition (CVD), and physical vapor deposition (PVD). This application does not specifically limit this, and can be adjusted accordingly according to the actual application scenario.
[0097] Sub-step B3: Create a microchannel of a first predetermined depth in the heat dissipation substrate from the first surface.
[0098] In this application, the specific value of the first preset depth is not specifically limited, and can be calibrated and adjusted according to the actual application scenario.
[0099] For example, see Figure 5 (c) Etching the microchannel 0211b to a first preset depth.
[0100] Sub-step B4: Along the extension direction of the microchannel, a micro-via of a second predetermined depth is formed in the heat dissipation substrate from the second surface, communicating with the microchannel.
[0101] The adapter board circuit includes multiple adapter electrical pins, and the number of adapter electrical pins is the same as that of the chip electrical pins; the positions of the adapter electrical pins and the positions of the chip electrical pins are set in a one-to-one correspondence.
[0102] For example, see Figure 5 (d) Along the extension direction of the microchannel, a micro-hole T of a second predetermined depth is formed in the heat dissipation substrate from the second surface, communicating with the microchannel, to form an inlet channel and an outlet channel.
[0103] Optionally, the second surface of the heat dissipation substrate and the first surface of the second heat dissipation substrate can be bonded by bonding methods such as silicon-silicon bonding, anodic bonding, gold-silicon bonding, gold-gold bonding, gold-tin bonding, gold-indium bonding, copper-copper hot-press bonding, and polymer wafer bonding.
[0104] Optionally, the methods for fabricating the microchannels, micro-holes, liquid inlet channels, and liquid outlet channels in the heat dissipation component may include deep silicon etching (DRIE), plasma etching, reactive ion etching, laser etching, chemical etching, etc., and the embodiments of this application do not specifically limit these methods.
[0105] Step 1022: Connect one side of the electrical connection component in the heat dissipation assembly to the cooling structure, and the other side to the high-power chip.
[0106] During the operation of the high-power chip, the liquid inlet channel is used to introduce coolant into the microchannel to dissipate heat from the heat-generating junction area of the high-power chip, and the liquid outlet channel is used to export the coolant after it has passed through the microchannel.
[0107] The cooling structure includes multiple coolant channels, each of which includes an inlet channel, a microchannel, and an outlet channel, with the microchannel located on the front side of the high-power chip.
[0108] In this application, the following methods are included: using silicon-based microfluidic adapters, glass microfluidic adapters, etc., to guide the coolant to the heat-generating junction area on the front of the high-power chip, and using the coolant to dissipate the heat generated by the chip from the front of the chip to achieve heat dissipation of the high-power chip; and using the circuits on the heat dissipation components to achieve electrical connection of the high-power chip.
[0109] It should be noted that the following methods are all implementation measures of this method: fabricating a thin layer with surface microstructures on the front side of a high-power chip, connecting the thin layer with a heat dissipation component, increasing the effective heat exchange area between the chip and the heat dissipation component through the microstructures on the surface of the thin layer, improving the heat exchange capacity between the chip and the cooling medium, and then dissipating heat through the circulation of the cooling medium in the heat dissipation component on the front side of the chip.
[0110] According to the heat dissipation method for high-power chips of the present invention, a thin layer with surface microstructures is formed on the front side of the high-power chip. The surface microstructures of the thin layer increase the effective heat exchange area between the chip and the heat dissipation structure, thereby improving the heat exchange capacity between the chip and the heat dissipation structure. A heat dissipation component connected to the thin layer with surface microstructures guides the cooling medium to the front side of the chip. Then, through heat exchange between the cooling medium and the chip, the heat generated in the heat-generating junction area of the chip is dissipated and carried away from the front side of the chip, thereby improving the heat dissipation capacity of the high-power chip, realizing efficient heat dissipation of the high-power chip, and meeting the heat dissipation requirements of the high-power chip.
[0111] In summary, the method for fabricating a high-power chip heat dissipation structure provided in this application embodiment can fabricate a heat exchange component on the surface of the high-power chip, prepare a heat dissipation assembly, and bond the heat dissipation assembly to the heat exchange component to obtain the high-power chip heat dissipation structure. The heat exchange component is used to accelerate the heat exchange between the high-power chip and the heat dissipation assembly. The heat exchange component is used to increase the heat dissipation area between the high-power chip and the heat dissipation assembly. This allows the coolant to be drawn to the heat-generating junction area on the front side of the high-power chip through the heat dissipation assembly, and the effective heat exchange area between the high-power chip and the heat dissipation assembly is increased by the heat exchange component. This solves the problem of small effective heat exchange area between the high-power chip and the heat dissipation structure in the prior art, improves the heat exchange capacity, and connects the heat dissipation assembly to the heat exchange component so that the heat generated by the chip is dissipated and carried away through the front side of the chip. This allows the heat-generating junction area of the high-power chip to directly exchange heat with the coolant, so that the heat generated by the chip is directly conducted to the coolant and carried away by the circulation of the coolant. This shortens the heat transfer path, improves the heat dissipation capacity of the chip, and meets the signal shielding and heat dissipation requirements of the high-power chip.
[0112] Although the invention has been described herein in conjunction with various embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings, the disclosure, and the appended claims in carrying out the claimed invention. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. A single processor or other unit can implement several functions listed in the claims. While different dependent claims may recite certain measures, this does not mean that these measures cannot be combined to produce good results.
[0113] Although the invention has been described in conjunction with specific features and embodiments, it is obvious that various modifications and combinations can be made therein without departing from the spirit and scope of the invention. Accordingly, this specification and drawings are merely exemplary descriptions of the invention as defined by the appended claims, and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the invention. Clearly, those skilled in the art can make various alterations and modifications to the invention without departing from its spirit and scope. Thus, if such modifications and modifications of the invention fall within the scope of the claims and their equivalents, the invention is also intended to include such modifications and modifications.
Claims
1. A high-power chip heat dissipation structure, characterized in that, The high-power chip heat dissipation structure, used in the heat dissipation process of high-power chips, includes: A heat dissipation component is located on the high-power chip, the heat dissipation component is bonded to the high-power chip, and the projection of the heat dissipation component on the high-power chip at least covers the heat-generating junction region of the device layer of the high-power chip, for dissipating the heat generated by the high-power chip; A heat exchange component located between the high-power chip and the heat dissipation component is used to increase the heat dissipation area between the high-power chip and the heat dissipation component; The heat dissipation assembly includes a cooling structure and an electrical connection assembly bonded together; the cooling structure forms multiple coolant channels, each coolant channel including a connected inlet channel, a microchannel and an outlet channel, and the microchannel is located on the front side of the high-power chip; the heat exchanger is located between the microchannel and the high-power chip; During the operation of the high-power chip, the liquid inlet channel is used to introduce coolant into the microchannel, and the coolant passes through the heat exchanger to dissipate heat from the heat-generating junction area of the high-power chip through the coolant and the heat exchanger. The liquid outlet channel is used to discharge the coolant after it has passed through the microchannel. One side of the electrical connection assembly is connected to the cooling structure, and the other side is electrically connected to the high-power chip.
2. The high-power chip heat dissipation structure according to claim 1, characterized in that, The heat exchanger includes a heat exchange layer, and the surface of the heat exchange layer facing the heat dissipation assembly has a microstructure.
3. The high-power chip heat dissipation structure according to claim 2, characterized in that, The heat exchange layer has a bonding region and a non-bonded region on the side facing the heat dissipation component. The non-bonded region is disposed opposite to the heat-generating junction region of the device layer of the high-power chip. The microstructure is located in the non-bonded region, and the bonding region is located on the periphery of the non-bonded region for bonding with the heat dissipation component.
4. The high-power chip heat dissipation structure according to claim 3, characterized in that, The heat dissipation structure also includes a bonding ring located in the bonding region, which is used to seal the non-bonded region.
5. The high-power chip heat dissipation structure according to claim 3, characterized in that, The microstructure includes multiple micro-protrusion substructures and / or multiple micro-dimple substructures. The cross-sectional shape of the multiple micro-protrusion substructures includes one or more of rectangles, semicircles, trapezoids, and triangles. The cross-sectional shape of the multiple micro-dimple substructures includes one or more of cuboids, semicircles, inverted trapezoids, and inverted triangles.
6. The high-power chip heat dissipation structure according to claim 1, characterized in that, The high-power chip includes a semiconductor substrate, and a device layer, a surface dielectric layer, and chip electrical pins located on both sides of the surface dielectric layer, sequentially disposed on the semiconductor substrate. The heat dissipation component includes a cooling structure and an electrical connection component. The pins of the adapter board circuit in the electrical connection component are connected one-to-one with the electrical pins of the chip. One side of the electrical connection component is connected to the cooling structure, and the other side is electrically connected to the high-power chip.
7. A method for fabricating a high-power chip heat dissipation structure, characterized in that, The method for preparing the high-power chip heat dissipation structure according to any one of claims 1-6 includes: A heat exchange component is fabricated on the surface of the high-power chip to prepare a heat dissipation assembly; The heat dissipation component is bonded to the heat exchanger to obtain the high-power chip heat dissipation structure; the heat exchanger is used to accelerate the heat exchange between the high-power chip and the heat dissipation component; the heat exchanger is used to increase the heat dissipation area between the high-power chip and the heat dissipation component.
8. The method for fabricating a high-power chip heat dissipation structure according to claim 7, characterized in that, The process of fabricating a heat exchanger on the surface of the high-power chip includes: A thin metal layer is fabricated on the surface of the high-power chip; The metal thin layer is planarized, and surface microstructures are prepared in the non-bonded areas of the planarized metal thin layer to obtain the heat exchanger.
9. The method for fabricating a high-power chip heat dissipation structure according to claim 7, characterized in that, Fabrication of heat dissipation components, including: An electrical connection component and a cooling structure are fabricated to form a heat dissipation component including the cooling structure and the electrical connection component; one side of the electrical connection component in the heat dissipation component is connected to the cooling structure, and the other side is electrically connected to the high-power chip.