Method for manufacturing an aluminum alloy component and semiconductor reaction chamber

Abstract

The present invention provides a method for manufacturing an aluminum alloy component and a semiconductor reaction chamber, comprising: forging or hot-rolling an aluminum alloy; during the forging or hot-rolling process, controlling the degree of deformation and / or the manufacturing temperature to form a plurality of aluminum alloy components, and at least one of the aluminum alloy components is an upper plate, a lower plate, a baffle plate, a pipeline for transporting fluoride ions, and the inner wall of the semiconductor reaction chamber disposed in the semiconductor reaction chamber; wherein, during a process of cleaning the semiconductor reaction chamber with the fluoride ions, the surface of the aluminum alloy components reacts with the fluoride ions to form aluminum fluoride. The present invention can effectively reduce the growth rate of aluminum fluoride, so that the aluminum alloy components have a longer service life. In addition, the present invention also provides a semiconductor reaction chamber.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor equipment, and particularly to aluminum alloy components and semiconductor reaction chambers including aluminum alloy components. Background Art

[0002] Components in common semiconductor reaction chambers are generally made of aluminum alloy material (hereinafter collectively referred to as: aluminum alloy components). Among them, the commonly used heating plate in the semiconductor reaction chamber is mainly used as a heating medium to heat the items carried on it (such as wafers). In the semiconductor reaction chamber, in addition to heating the carrier above it, it also serves as the lower electrode in the plasma process. It cooperates with the upper electrode of the spraying component and a radio frequency power supply to ionize the gas between the upper and lower electrodes. The ionized gas reacts with each other and deposits on the surface of the item carried by the heating plate to form a thin film. Since some polymers will be deposited on the surface of the aluminum alloy components during the above processing in the semiconductor reaction chamber, the semiconductor reaction chamber needs to be cleaned after a certain period of use to remove the aforementioned polymers. The usual cleaning method is to fill fluoride ions in the semiconductor reaction chamber for cleaning. In a fluorine-containing environment, the surface of the aluminum alloy components will react with fluoride ions and generate aluminum fluoride. According to the content disclosed in the prior art invention patent (Chinese Patent Publication No. CN106555157A), the generation of aluminum fluoride on the surface can help reduce the phenomenon of abnormal discharge. However, the continuously growing aluminum fluoride will affect the performance of radio frequency and heat transfer, and affect the process performance. When the thickness of aluminum fluoride is too large, the aluminum fluoride may peel off, thus affecting the film quality. At this time, the aluminum alloy components will be scrapped and need to be replaced. In order to obtain high-quality thin films and extend the service life of aluminum alloy components, the thickness of aluminum fluoride on the surface of aluminum alloy components can be controlled by removing aluminum fluoride or inhibiting the growth rate of aluminum fluoride. Since other methods of removing aluminum fluoride will bring some derivative problems. Therefore, how to inhibit the growth rate of the fluoride layer is worthy of consideration for those with ordinary knowledge in this field. Summary of the Invention

[0003] The purpose of the present invention is to provide a method for manufacturing aluminum alloy components and a semiconductor reaction chamber to solve the problem of extending the service life of aluminum alloy components in the prior art.

[0004] To achieve the above object, the present invention provides a manufacturing method for the service life of an aluminum alloy component, which is applied to a semiconductor reaction chamber and includes: forging or hot rolling the aluminum alloy; during the forging or hot rolling process, controlling the degree of deformation and / or manufacturing temperature to form a plurality of aluminum alloy components, and the aluminum alloy components are at least one of an upper plate, a lower plate, a baffle, a pipeline for transporting fluoride ions, and the inner wall of the semiconductor reaction chamber configured in the semiconductor reaction chamber; wherein, during a process of cleaning the semiconductor reaction chamber with the fluoride ions, the surface of the aluminum alloy components reacts with the fluoride ions to form aluminum fluoride.

[0005] The heating device as described above, wherein the control of the degree of deformation and / or manufacturing temperature is used to control the lattice size of the aluminum alloy to form the aluminum alloy components, and the aluminum alloy components are composed of aluminum alloy with long grains and short grain boundaries.

[0006] The heating device as described above further includes a machining process to adjust the lattice direction of the aluminum alloy components.

[0007] To achieve the above object, the present invention further provides a semiconductor reaction chamber, which includes: at least one aluminum alloy component configured in the semiconductor reaction chamber, and the aluminum alloy component is one of an upper plate, a lower plate, a baffle, a pipeline for transporting fluoride ions, and the inner wall of the semiconductor reaction chamber; wherein the aluminum alloy component is formed by forging or hot rolling means, so that during a process of cleaning the semiconductor reaction chamber with fluoride ions, the surface of the aluminum alloy component reacts with the fluoride ions to form aluminum fluoride. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 It is a manufacturing flow chart of the aluminum alloy component of the present invention.

[0009] Figure 2 It is a comparison chart of the growth rates of aluminum fluoride on the surfaces of traditional casting and forging / hot rolling. DETAILED DESCRIPTION OF THE INVENTION

[0010] Please refer to Figure 1 the manufacturing flow chart of the aluminum alloy component of the present invention shown, such as step S11,

[0011] First, the aluminum alloy is forged or hot-rolled. The forging process includes calculating and cutting the material, heating, pre-forging, forging into shape, trimming, heat treatment, straightening, etc.; the hot-rolling process includes ingot casting, homogenization, surface milling, heating, hot-rolling, sizing, shearing, straightening, etc. Then, as in step S12, the degree of deformation and / or the manufacturing temperature are controlled during the above forging or hot-rolling process to form an aluminum alloy component with specific physical properties (grain size). Again, as in step S13, the aluminum alloy component with specific physical properties is machined to adjust the lattice direction of the aluminum alloy component. Finally, as in S14, an aluminum alloy component that can slow down the growth of aluminum fluoride on the surface during the cleaning stage of the semiconductor reaction chamber is ultimately formed. The above aluminum alloy component is a component used in the semiconductor reaction chamber, such as an upper electrode plate, a lower electrode plate, a baffle, a pipeline for transporting fluoride ions, and the inner wall of the semiconductor reaction chamber, etc. It will react with the cleaning fluoride ion gas during the cleaning process of the semiconductor reaction chamber, causing aluminum fluoride to be generated on the surface of the component. The upper electrode plate is a spray plate in the specific embodiment of the present invention, the lower electrode plate is a heating plate, and the baffle is a lining. In addition, the semiconductor reaction chamber can be a reaction chamber for technologies such as Plasma-Enhanced Chemical Vapor Deposition (PECVD), Atomic layer deposition (ALD), High-Density Plasma Chemical Vapor Deposition (HDP-CVD), Sub-Atmospheric Chemical Vapor Deposition (SACVD), etc.

[0012] The above aluminum alloy component with specific physical properties is composed of an aluminum alloy with long grains and few grain boundaries. The range of its grains is between 300μm - 5000μm, and machining can adjust the lattice direction of one surface of the aluminum alloy component, so that in a fluorine-containing environment, the aluminum alloy component will generate dense aluminum fluoride to block the diffusion of fluoride ions into the interior of the aluminum alloy component, thereby reducing the growth rate of aluminum fluoride.

[0013] Next, please refer to Figure 2Comparison chart of the growth rates of aluminum fluoride on the surfaces of traditional castings and hot-rolled surfaces. As can be seen from the diagram, for the aluminum alloy lower electrode plates manufactured by hot rolling and forging, during the fluoride ion cleaning process, as time increases (from 100 hours to 400 hours), the thickness of the aluminum fluoride growth is only slightly increased compared to traditional casting components. On the contrary, for the traditional cast aluminum alloy lower electrode plates, when the fluoride ion cleaning time is less than 100 hours, the thickness of the aluminum fluoride growth is already greater than that of the aluminum alloy lower electrode plates manufactured by hot rolling. After the fluoride ion cleaning time is greater than 200 hours, the thickness of the aluminum fluoride growth on the cast aluminum alloy lower electrode plates has reached more than three times that of the aluminum fluoride growth on the hot-rolled aluminum alloy lower electrode plates, and when the fluoride ion cleaning time is close to 400 hours, it even reaches four times. Therefore, it can be known from the diagram that the present invention uses forging or hot rolling to manufacture aluminum alloy components with specific physical properties, which can effectively reduce the growth rate of aluminum fluoride, enabling the aluminum alloy components to have a longer service life. Moreover, since aluminum fluoride can help reduce abnormal discharge phenomena, the overall semiconductor reaction chamber has a more stable production efficiency.

[0014] It should be noted that the foregoing embodiments described in the present invention are only used to illustrate the present invention and are not used to limit the scope of the present invention. Those of ordinary skill in the art to which the present invention pertains can make various modifications and changes to the present invention without departing from the spirit and scope of the present invention. Components that are the same or similar in different embodiments, or components represented by the same component symbols in different embodiments, have the same physical or chemical properties. In addition, under appropriate circumstances, the above embodiments of the present invention can be combined or replaced with each other, rather than being limited to the specific embodiments described above. The connection relationships between specific components described in one embodiment can also be applied to other embodiments, and all of them fall within the scope of the present invention as defined in the appended patent application scope.

Claims

1. A manufacturing method of an aluminum alloy component, the aluminum alloy component being applied to a semiconductor reaction chamber, characterized in that, Comprising: During forging or hot rolling, an aluminum alloy component with long grains having a grain size ranging from 300 μm to 5000 μm is formed by controlling the degree of deformation and / or the manufacturing temperature, wherein the aluminum alloy component is at least one of an upper electrode plate, a lower electrode plate, a baffle plate, a pipeline for transporting fluoride ions, and the inner wall of the semiconductor reaction chamber disposed in the semiconductor reaction chamber; and The aluminum alloy component is machined to adjust the lattice direction of a surface of the aluminum alloy component, so that during the process of cleaning the semiconductor reaction chamber with fluoride ions, the surface reacts with the fluoride ions to form dense aluminum fluoride to block the diffusion of the fluoride ions into the interior of the aluminum alloy component.

2. The manufacturing method according to claim 1, characterized in that, The upper electrode plate includes a shower plate.

3. The manufacturing method according to claim 1, characterized in that, The lower electrode plate includes a heating plate.

4. The manufacturing method according to claim 1, characterized in that, The baffle plate includes a lining.

5. A semiconductor reaction chamber, characterized in that, Comprising: At least one aluminum alloy component disposed in the semiconductor reaction chamber, wherein the aluminum alloy component is one of an upper electrode plate, a lower electrode plate, a baffle plate, a pipeline for transporting fluoride ions, and the inner wall of the semiconductor reaction chamber, and is manufactured by the manufacturing method of the aluminum alloy component according to any one of claims 1 to 4.

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