A detection substrate, a flat panel detector

Abstract

The present invention provides a detection substrate, a manufacturing method thereof, and a flat panel detector, relating to the technical field of optoelectronic detection, capable of avoiding the reduction of metal oxide thin film transistors and improving the stability of metal oxide thin film transistors. The detection substrate includes a plurality of detection pixel units arranged in an array; the detection pixel unit includes: a thin film transistor, a sacrificial layer, and a photoelectric conversion portion disposed on a substrate; the sacrificial layer is located between the thin film transistor and the photoelectric conversion portion; wherein, the thin film transistor includes an active layer, a first electrode, and a second electrode; at least a partial orthographic projection of the active layer on the substrate is located within the orthographic projection of the sacrificial layer on the substrate; the photoelectric conversion portion is electrically connected to the sacrificial layer and the first electrode respectively; in the detection substrate, the sacrificial layers of the respective detection pixel units are independent of each other. The present invention is applicable to the manufacture of the detection substrate.

Description

Technical Field

[0001] The present invention relates to the field of photoelectric detection technology, and in particular to a detection substrate and a flat-panel detector. Background Art

[0002] With the continuous development of X-ray digital imaging technology, the use of flat panel X-ray detectors (FPXD) can directly convert X-ray images into digital images, which has broad application prospects in the fields of medical care, security, industrial inspection, etc.

[0003] X-ray flat panel detectors include a detection substrate, which includes multiple thin-film transistors and multiple photodiodes (PINs). Currently, thin-film transistors mostly use amorphous silicon (a-Si) thin-film transistors, but amorphous silicon thin-film transistors have low carrier mobility and cannot meet the requirements of dynamic X-ray flat panel detectors. IGZO (Indium Gallium Zinc Oxide) thin-film transistors, on the other hand, have a carrier mobility between 5 and 20, which can meet the requirements of the application scenario.

[0004] However, IGZO is a metal oxide and is very sensitive to highly reducing hydrogen atoms (H plasma). Therefore, during the fabrication of related film layers (such as silicon nitride layers) and photodiodes, hydrogen atoms can diffuse into the IGZO thin-film transistors, reducing them to metal. This reduces stability and can even lead to loss of switching functionality, ultimately significantly degrading the performance of X-ray flat-panel detectors. Summary of the invention

[0005] The embodiments of the present invention provide a detection substrate and a flat panel detector. The detection substrate can prevent metal oxide thin film transistors from being reduced as much as possible, thereby greatly improving the stability of the metal oxide thin film transistors and further improving the performance of the flat panel detector.

[0006] To achieve the above objectives, the embodiments of the present invention adopt the following technical solutions:

[0007] In one aspect, a detection substrate is provided, comprising a substrate and a plurality of detection pixel units arranged in an array on the substrate;

[0008] The detection pixel unit includes: a thin film transistor, a sacrificial layer and a photoelectric conversion unit arranged on the substrate; the sacrificial layer is located between the thin film transistor and the photoelectric conversion unit;

[0009] Among them, the thin-film transistor includes an active layer, a first electrode, and a second electrode; at least a part of the orthographic projection of the active layer on the substrate is located within the orthographic projection of the sacrificial layer on the substrate; the photoelectric conversion part is electrically connected to the sacrificial layer and the first electrode respectively;

[0010] In the detection substrate, the sacrificial layers of the detection pixel units are independent of each other.

[0011] Optionally, the photoelectric conversion part is arranged on the side of the thin-film transistor away from the substrate.

[0012] Optionally, the orthographic projection of the active layer on the substrate is located within the orthographic projection of the sacrificial layer on the substrate.

[0013] Optionally, the photoelectric conversion part includes a reading electrode;

[0014] In each of the detection pixel units, the sacrificial layer is in contact with the reading electrode.

[0015] Optionally, the detection pixel unit further includes a first passivation layer, a first organic layer, and a first via hole, and the first via hole penetrates through the first passivation layer and the first organic layer to expose the first electrode;

[0016] The sacrificial layer is not in contact with the first electrode, and the reading electrode is in contact with the first electrode through the first via hole.

[0017] Optionally, the orthographic projection of the sacrificial layer on the substrate and the orthographic projection of the first via hole on the substrate do not overlap or partially overlap.

[0018] Optionally, at least a part of the boundary of the orthographic projection of the reading electrode on the substrate is located within the boundary of the orthographic projection of the sacrificial layer on the substrate.

[0019] Optionally, the photoelectric conversion part further includes a photoelectric conversion structure arranged on the side of the reading electrode away from the substrate;

[0020] The orthographic projection of the photoelectric conversion structure on the substrate does not overlap with the orthographic projection of the first via hole on the substrate.

[0021] Optionally, the boundary of the orthographic projection of the photoelectric conversion structure on the substrate is located within the boundary of the orthographic projection of the reading electrode on the substrate.

[0022] Optionally, the detection pixel unit further includes: a second organic layer, a second passivation layer, a bias electrode, and a third passivation layer that are sequentially stacked on the photoelectric conversion part;

[0023] Among them, the bias electrode is electrically connected to the photoelectric conversion part through a second via hole, and the second via hole penetrates through the second organic layer and the second passivation layer.

[0024] Optionally, the detection pixel unit further includes: a conductive electrode, which is located between the photoelectric conversion part and the second organic layer and is in contact with the photoelectric conversion part.

[0025] Optionally, the photoelectric conversion part includes a reading electrode and a photoelectric conversion structure; the photoelectric conversion structure is arranged on a side of the reading electrode away from the substrate; the photoelectric conversion structure includes a first doped layer, an intrinsic layer, and a second doped layer that are sequentially stacked on the reading electrode, and the polarities of the first doped layer and the second doped layer are opposite;

[0026] The first doped layer is in contact with the reading electrode, and the second doped layer is in contact with the conductive electrode.

[0027] Optionally, the detection substrate further includes a plurality of gate lines arranged in a first direction and a plurality of data lines arranged in a second direction; wherein, in the detection pixel unit, the orthographic projection of the sacrificial layer on the substrate does not overlap with the orthographic projection of the gate line on the substrate, and the orthographic projection of the sacrificial layer on the substrate does not overlap with the orthographic projection of the data line on the substrate.

[0028] Optionally, in the detection pixel unit, the sacrificial layer includes a connected first part and a second part, and a part of the first part close to the gate line or the data line protrudes from the second part;

[0029] The line width of a part of the data line close to the first part is smaller than the line width of a part close to the second part, and the line width of a part of the gate line close to the first part is smaller than the line width of a part close to the second part.

[0030] Optionally, the detection pixel unit further includes: a bias electrode, which is electrically connected to the photoelectric conversion part;

[0031] The detection substrate further includes a plurality of bias lines arranged in the second direction, and the bias lines are electrically connected to the bias electrodes of at least one row of the detection pixel units arranged in the first direction.

[0032] On the other hand, a flat panel detector is provided, including: the above-mentioned detection substrate.

[0033] Embodiments of the present invention provide a detection substrate and a flat panel detector. The detection substrate includes a substrate and a plurality of detection pixel units arranged in an array on the substrate. The detection pixel unit includes: a thin film transistor, a sacrificial layer, and a photoelectric conversion unit disposed on the substrate. The sacrificial layer is located between the thin film transistor and the photoelectric conversion unit. Wherein, the thin film transistor includes an active layer, a first electrode, and a second electrode. At least a part of the orthographic projection of the active layer on the substrate is located within the orthographic projection of the sacrificial layer on the substrate. The photoelectric conversion unit is electrically connected to the sacrificial layer and the first electrode respectively. In the detection substrate, the sacrificial layers of the detection pixel units are independent of each other.

[0034] In this way, in each detection pixel unit, the sacrificial layer is located between the thin film transistor and the photoelectric conversion unit, and at least a part of the orthographic projection of the sacrificial layer on the substrate overlaps with the orthographic projection of the active layer on the substrate. Then, the sacrificial layer can prevent hydrogen atoms generated in the manufacturing process from penetrating into the thin film transistor, and as much as possible avoid the reduction of the thin film transistor, thereby greatly improving the stability of the thin film transistor, and further improving the performance of the flat panel detector. In addition, in each detection pixel unit, the sacrificial layer is electrically connected to the photoelectric conversion unit, so no capacitance will be generated between the two. At the same time, the sacrificial layers of the detection pixel units are independent of each other, thus avoiding the influence of the sacrificial layers of different detection pixel units on each other, and further being able to solve the problem of signal crosstalk and further improving the product performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0036] Figure 1 It is a schematic structural diagram of a detection substrate provided by an embodiment of the present invention;

[0037] Figure 2 It is a schematic structural diagram of a detection pixel unit provided by an embodiment of the present invention;

[0038] Figure 3a 、 3b and 3c are three cross-sectional schematic diagrams along the Figure 2 CC' direction in

[0039] Figure 4 It is a transfer characteristic curve diagram of a thin film transistor provided by an embodiment of the present invention;

[0040] Figure 5Another structural schematic diagram of the detection pixel unit provided by the embodiment of the present invention;

[0041] Figure 6 It is along Figure 5 The cross-sectional schematic diagram in the DD' direction in;

[0042] Figures 7 - 9 The structural schematic diagram of the manufacturing process of the detection substrate provided by the embodiment of the present invention;

[0043] Figure 10 It is along Figure 2 Another cross-sectional schematic diagram in the CC' direction in. Detailed implementation manners

[0044] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0045] In the embodiments of the present invention, terms such as "first" and "second" are used to distinguish the same items or similar items with basically the same functions and effects, only for clearly describing the technical solutions in the embodiments of the present invention, and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features.

[0046] In the embodiments of the present invention, the meaning of "a plurality of" is two or more, and the meaning of "a plurality of strips" is two or more, unless otherwise clearly and specifically defined.

[0047] In the embodiments of the present invention, the orientation or positional relationship indicated by terms such as "upper" and "lower" is based on the orientation or positional relationship shown in the drawings, and is only for facilitating the description of the present invention and simplifying the description, rather than indicating or implying that the indicated device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention.

[0048] Figure 5 It is a structural schematic diagram of a detection pixel unit provided by the embodiment of the present invention, Figure 6 It is along Figure 5 The cross-sectional schematic diagram in the DD' direction in. Combining Figure 5 and Figure 6As shown, in the detection substrate, the detection pixel unit includes a substrate 100, and a thin-film transistor 12, a first passivation layer 13, a first organic layer 14, a sacrificial layer 10, an insulating layer 30, and a read electrode 11 that are sequentially stacked on the substrate 100. Among them, the sacrificial layers in each detection pixel unit are interconnected, the sacrificial layer is disposed over the entire surface, and the sacrificial layer is insulated from the read electrode. This detection substrate can avoid the influence of hydrogen atoms on the thin-film transistor during the manufacturing process. However, the inventor found that when the above detection substrate was tested for the final product, there were adverse phenomena such as the inability to collect bright-state images and the need for several initializations for the dark-state images. After careful analysis, after applying a constant potential to the sacrificial layer and testing again, the test result was that the product could normally collect dark-state images. But when testing the characteristics with a tungsten sheet again, the product had a problem of signal crosstalk and still could not work properly.

[0049] After careful research, the inventor proposed a new detection substrate structure based on the above. Refer to Figure 1 As shown, it includes a substrate ( Figure 1 not shown) and a plurality of detection pixel units 1 arranged in an array on the substrate.

[0050] Combined with Figure 2 and Figures 3a - 3c As shown, the detection pixel unit includes: a thin-film transistor 12, a sacrificial layer 10, and a photoelectric conversion part disposed on the substrate 100. The sacrificial layer is located between the thin-film transistor and the photoelectric conversion part.

[0051] Among them, refer to Figures 3a - 3c As shown, the thin-film transistor 12 includes an active layer 123, a first electrode 121, and a second electrode 122; the first electrode 121 and the second electrode 122 are respectively electrically connected to the active layer 123, and the material of the active layer includes metal oxide; at least a part of the orthographic projection of the active layer 123 on the substrate is located within the orthographic projection of the sacrificial layer 10 on the substrate; the photoelectric conversion part is respectively electrically connected to the sacrificial layer and the first electrode.

[0052] In the detection substrate, the sacrificial layers of each detection pixel unit are independent of each other.

[0053] The above photoelectric conversion part can convert light energy into electrical energy, and its specific structure is not limited. For example, refer to Figures 3a - 3c As shown, the above photoelectric conversion part may include a read electrode 11 and a photoelectric conversion structure 15. The material of the read electrode is not limited. For example, it may include metal or metal alloy. In order to improve the reading speed, the read electrode can be made of a metal with high conductivity, such as: molybdenum, aluminum, silver, copper, titanium, platinum, tungsten. The photoelectric conversion structure may include a photodiode (PIN), and the photodiode may include, for example, Figure 10The first doping layer 151, the intrinsic layer 150, and the second doping layer 152 shown. In addition, the photoelectric conversion parts of each detection pixel unit are independent of each other, and the reading electrodes of the photoelectric conversion parts of each detection pixel unit are independent of each other, so as to avoid the mutual influence of adjacent photoelectric conversion parts and reduce the detection accuracy.

[0054] Here, the relative positions of the thin-film transistor and the photoelectric conversion part are not limited. Refer to Figure 3a and 3b shown, the photoelectric conversion part can be arranged on the side of the thin-film transistor away from the substrate; or, refer to Figure 3c shown, the photoelectric conversion part can also be arranged on the side of the thin-film transistor close to the substrate.

[0055] In the above thin-film transistor, the first electrode and the second electrode can be the drain electrode and the source electrode respectively. According to the type of the thin-film transistor and the difference of the input signal, their functions can be interchanged, and no specific distinction is made here. For example, if the thin-film transistor is an N-type thin-film transistor, the first electrode can be the drain electrode, and the second electrode can be the source electrode. If the thin-film transistor is a P-type thin-film transistor, the first electrode can be the source electrode, and the second electrode can be the drain electrode.

[0056] Refer to Figures 3a - 3c shown, the thin-film transistor 12 can also include a gate electrode 120. The thin-film transistor can be a bottom-gate thin-film transistor (the source electrode and the drain electrode are arranged above the gate electrode) as Figures 3a - 3c shown, or it can also be a top-gate thin-film transistor (the source electrode and the drain electrode are arranged below the gate electrode), which is not limited here. It should be noted that in the top-gate thin-film transistor, the gate electrode can play a certain protective role for the active layer and can prevent some hydrogen atoms from diffusing into the active layer during the manufacturing process. In the bottom-gate thin-film transistor, the gate electrode cannot form a protection for the active layer, and the active layer is more seriously affected by hydrogen atoms. At this time, the protective effect of the sacrificial layer on the thin-film transistor is particularly important.

[0057] In this thin-film transistor, the materials of the first electrode, the second electrode, and the gate electrode can include metals such as molybdenum, aluminum, silver, copper, titanium, platinum, tungsten, etc., or other conductive materials such as metal alloys can also be included, which can be selected according to actual requirements.

[0058] That the at least partial orthographic projection of the active layer on the substrate is located within the orthographic projection of the sacrificial layer on the substrate means that: the partial orthographic projection of the active layer on the substrate is located within the orthographic projection of the sacrificial layer on the substrate, or, refer to Figures 3a - 3c shown, the entire orthographic projection of the active layer on the substrate is located within the orthographic projection of the sacrificial layer on the substrate. In order to protect the active layer as much as possible and avoid its reduction by hydrogen atoms, the latter is selected.

[0059] The material of the above-mentioned substrate is not limited, and it may include rigid materials, such as glass; or, it may also include flexible materials, such as polyimide (PI).

[0060] The above-mentioned detection substrate can be applied to an X-ray flat panel detector. The X-ray flat panel detector can be a direct conversion type (Direct DR) detector, or it can also be an indirect conversion type (Indirect DR) detector, which is not limited here. Among them, the indirect conversion type X-ray flat panel detector technology is relatively mature, the cost is relatively low, the detective quantum efficiency (DQE) is high, and the reliability is good. Therefore, it has been widely developed and applied. The display principle of the indirect conversion type X-ray flat panel detector is as follows: under the irradiation of X-rays, the scintillator layer or phosphor layer of the indirect conversion type X-ray flat panel detector converts X-ray photons into visible light, and then under the action of the photoelectric conversion part, the visible light is converted into an electrical signal. Finally, the electrical signal is read by the thin film transistor and the electrical signal is output to obtain a display image.

[0061] Of course, the above-mentioned detection substrate can also be applied to other products using metal oxide thin film transistors. After the metal oxide thin film transistors in such products are fabricated, there are sensitizing environments such as high hydrogen, high water, and high oxygen in the subsequent processes. By using the above-mentioned detection substrate, the metal oxide thin film transistors can be protected as much as possible to avoid their reduction, so as to improve the stability of the metal oxide thin film transistors.

[0062] Figure 2 It is a schematic structural diagram of a detection pixel unit provided by an embodiment of the present invention. Figure 3a 、 Figure 3b and Figure 3c are three cross-sectional schematic diagrams along the CC' direction in Figure 2 .

[0063] In the detection substrate provided by the embodiment of the present invention, in each detection pixel unit, the sacrificial layer is located between the thin film transistor and the photoelectric conversion part, and the orthographic projection of the sacrificial layer on the substrate overlaps at least partially with the orthographic projection of the active layer on the substrate; then, the sacrificial layer can prevent hydrogen atoms generated in the manufacturing process from penetrating into the thin film transistor, and as much as possible avoid the reduction of the thin film transistor, thereby greatly improving the stability of the thin film transistor, and further improving the performance of the flat panel detector. Refer to Figure 4 As shown, the thin film transistor of this detection substrate has good switching characteristics. Figure 4 is a transfer characteristic curve graph of the thin film transistor. The abscissa represents voltage, with the unit of volt (V), and the ordinate represents current, with the unit of ampere (A).

[0064] In addition, compared with Figure 6For the detection substrate shown, in each detection pixel unit provided by the embodiments of the present invention, the sacrificial layer is electrically connected to the photoelectric conversion portion, so that no capacitance will be generated between the two; at the same time, the sacrificial layers of each detection pixel unit are independent of each other, thereby avoiding the influence of the sacrificial layers of different detection pixel units on each other, and further being able to solve the signal crosstalk problem and further improve the product performance.

[0065] Optionally, referring to Figure 3a and Figure 3b shown, the photoelectric conversion portion is disposed on a side of the thin film transistor away from the substrate. In this way, when manufacturing this detection substrate, the thin film transistor will be formed first, and then the photoelectric conversion portion will be manufactured. Then, after the thin film transistor is formed, in the subsequent manufacturing process, the sacrificial layer can chemically react with hydrogen atoms, thereby playing a role in consuming and blocking hydrogen atoms, and further preventing hydrogen atoms from penetrating into the thin film transistor, as much as possible avoiding the reduction of the thin film transistor, thereby greatly improving the stability of the thin film transistor and further improving the performance of the flat panel detector. Referring to Figure 4 shown, the thin film transistor of this detection substrate has good switching characteristics. Figure 4 is the transfer characteristic curve graph of the thin film transistor. The abscissa represents voltage, with the unit of volt (V), and the ordinate represents current, with the unit of ampere (A).

[0066] However, in the detection substrate as Figure 3c shown, the photoelectric conversion portion is disposed on a side of the thin film transistor 12 close to the substrate 100. In this way, when manufacturing this detection substrate, the photoelectric conversion portion will be formed first, and then the thin film transistor will be manufactured. Then, when the thin film transistor is formed, it will be in an environment such as high temperature. In this high temperature environment, the already formed photoelectric conversion portion (including the reading electrode 11 and the photoelectric conversion structure 15), the second passivation layer 17, and the second organic layer 16 are very likely to generate a lot of bad substances, thereby affecting the thin film transistor and causing it to be reduced. The sacrificial layer 10 can play a physical blocking role to protect the thin film transistor.

[0067] Further optionally, in order to better avoid the reduction of the thin film transistor, the orthographic projection of the active layer on the substrate is located within the orthographic projection of the sacrificial layer on the substrate.

[0068] Optionally, referring to Figure 3a and Figure 3b shown, the photoelectric conversion portion includes a reading electrode 11; in each detection pixel unit, the sacrificial layer 10 is in contact with the reading electrode 11.

[0069] Here, the manner of contact between the sacrificial layer and the reading electrode is not limited. By way of example, referring to Figure 3a and Figure 3bAs shown, the two opposite sides of the sacrificial layer 10 facing the read electrode 11 are in face-to-face contact; of course, the sacrificial layer and the read electrode may also be in contact only at the boundary. Considering better avoiding the capacitance generated between the sacrificial layer and the read electrode, the former contact structure is selected.

[0070] The above-mentioned sacrificial layer is in contact with the read electrode, so as to achieve electrical connection, and further avoid the generation of capacitance between the two, thus avoiding the signal crosstalk problem that occurs in the detection substrate as Figure 6 shown, and further improving the product performance.

[0071] Optionally, in order to simplify the structure and reduce the manufacturing difficulty, referring to Figure 3a and Figure 3b shown, the detection pixel unit further includes a first passivation layer 13, a first organic layer 14 and a first via hole (not shown in FIG. 3). The first via hole penetrates through the first passivation layer and the first organic layer to expose the first electrode. The sacrificial layer is not in contact with the first electrode, and the read electrode is in contact with the first electrode through the first via hole.

[0072] Referring to Figure 3a and Figure 3b shown, the above-mentioned first passivation layer 13 covers the thin film transistor 12, which can play a role in protection and insulation, and its material may include silicon nitride, silicon oxide or silicon oxynitride. The above-mentioned first organic layer 14 is located between the first passivation layer 13 and the sacrificial layer 10, which can play a role in insulation and planarization, and its material may include organic resin materials such as polyacrylic acid resin, polyepoxyacrylic acid resin, polyester acrylate, and polyurethane acrylate resin.

[0073] Referring to Figure 3a shown, the above-mentioned sacrificial layer 10 may be provided only on the side of the first organic layer 14 away from the substrate, and not provided in the first via hole. Alternatively, the sacrificial layer may also extend into the first via hole; referring to Figure 3b shown, the sacrificial layer 10 may also extend into the first via hole, that is, provided on the side wall of the first via hole and covering the first organic layer 14 on the side wall of the first via hole; of course, the sacrificial layer may also cover the first passivation layer on the side wall of the first via hole, as long as it is not in contact with the first electrode.

[0074] Optionally, the orthographic projection of the sacrificial layer on the substrate and the orthographic projection of the first via hole on the substrate do not overlap or partially overlap.

[0075] Referring to Figure 3a shown, the orthographic projection of the sacrificial layer on the substrate and the orthographic projection of the first via hole on the substrate do not overlap. At this time, the sacrificial layer can be arranged to bypass the area where the first via hole is located, or it can also have a hollow structure in the area where the first via hole is located, which is not limited here, Figure 2 and the former is illustrated as an example. The manufacturing process of this structure is simple and easy to implement.

[0076] Reference Figure 3b As shown, the orthographic projection of the sacrificial layer on the substrate overlaps with the orthographic projection of the first via on the substrate, that is, the sacrificial layer also extends into the first via; in this structure, the coverage range of the sacrificial layer is larger, which can prevent hydrogen atoms generated in the area of the first via from penetrating into the active layer during the manufacturing process, thus protecting the thin film transistor more comprehensively.

[0077] Optionally, at least part of the boundary of the orthographic projection of the reading electrode on the substrate is located within the boundary of the orthographic projection of the sacrificial layer on the substrate.

[0078] In the above detection substrate, part of the boundary of the orthographic projection of the reading electrode on the substrate is located within the boundary of the orthographic projection of the sacrificial layer on the substrate, or all of the boundary of the orthographic projection of the reading electrode on the substrate is located within the boundary of the orthographic projection of the sacrificial layer on the substrate. Of course, all of the boundary of the orthographic projection of the sacrificial layer on the substrate can also be located within the boundary of the orthographic projection of the reading electrode on the substrate, or the boundary of the orthographic projection of the reading electrode on the substrate can coincide with the boundary of the orthographic projection of the sacrificial layer on the substrate.

[0079] The following specifically describes two cases.

[0080] First, reference Figure 3a As shown, the boundary of the orthographic projection EF of the reading electrode 11 on the substrate 100 is located within the boundary of the orthographic projection E1F1 of the sacrificial layer 10 on the substrate 100.

[0081] The boundary of the orthographic projection of the reading electrode on the substrate refers to the outer boundary of the orthographic projection of the reading electrode on the substrate, and the boundary of the orthographic projection of the sacrificial layer on the substrate refers to the outer boundary of the orthographic projection of the sacrificial layer on the substrate.

[0082] In this case, a relatively flat reading electrode can be formed. Then, the optoelectronic conversion structure formed on the reading electrode later is also relatively flat, which is beneficial to improving the performance of the optoelectronic conversion structure.

[0083] Second, the boundary of the orthographic projection of the reading electrode on the substrate is located outside the boundary of the orthographic projection of the sacrificial layer on the substrate.

[0084] The boundary of the orthographic projection of the reading electrode on the substrate refers to the outer boundary of the orthographic projection of the reading electrode on the substrate, and the boundary of the orthographic projection of the sacrificial layer on the substrate refers to the outer boundary of the orthographic projection of the sacrificial layer on the substrate.

[0085] In this case, the size of the reading electrode can be made slightly larger, and the size of the sacrificial layer can be made slightly smaller, which can improve the reading speed of the reading electrode; however, a step difference will be formed at the edge of the sacrificial layer where the reading electrode is formed, which is not conducive to forming a flat optoelectronic conversion structure later.

[0086] Optionally, referring to Figure 3a and Figure 3b as shown, the photoelectric conversion unit further includes a photoelectric conversion structure 15 disposed on the side of the reading electrode 11 away from the substrate 100; the orthographic projection of the photoelectric conversion structure on the substrate does not overlap with the orthographic projection of the first via on the substrate.

[0087] Since the orthographic projection of the above-mentioned photoelectric conversion structure on the substrate does not overlap with the orthographic projection of the first via on the substrate, no photoelectric conversion unit is provided in the first via. Then, the photoelectric conversion structure can be arranged to bypass the area where the first via is located, or, alternatively, it can have a hollow structure in the area where the first via is located, which is not limited here.

[0088] In this way, it is beneficial to form a flat photoelectric conversion unit to improve the performance of the photoelectric conversion unit. Of course, the photoelectric conversion unit can also cover the first via, which can increase the filling rate, but the bottom of the photoelectric conversion unit is uneven and the photoelectric conversion performance is poor.

[0089] Further optionally, in order to improve the reading efficiency of the reading electrode, referring to Figure 3a and Figure 3b as shown, the boundary of the orthographic projection E2F2 of the photoelectric conversion structure 15 on the substrate 100 is located within the boundary of the orthographic projection EF of the reading electrode 11 on the substrate 100.

[0090] The boundary of the orthographic projection of the photoelectric conversion structure on the substrate refers to the outer boundary of the orthographic projection of the photoelectric conversion structure on the substrate, and the boundary of the orthographic projection of the reading electrode on the substrate refers to the outer boundary of the orthographic projection of the reading electrode on the substrate.

[0091] It should be noted that the case where the boundary of the orthographic projection of the photoelectric conversion structure on the substrate coincides with the boundary of the orthographic projection of the reading electrode on the substrate belongs to the above category.

[0092] Optionally, in order to better drive the photoelectric conversion unit, referring to Figure 3a and Figure 3b as shown, the detection pixel unit further includes: a second organic layer 16, a second passivation layer 17, a bias electrode 18, and a third passivation layer 19 that are sequentially stacked on the photoelectric conversion unit.

[0093] Among them, the bias electrode is electrically connected to the photoelectric conversion unit through a second via, and the second via penetrates the second organic layer and the second passivation layer.

[0094] Since the above-mentioned bias electrode is electrically connected to the photoelectric conversion unit, a bias voltage can be provided to the photoelectric conversion unit through the bias electrode. The material of the bias electrode can include a transparent conductive material, for example: indium tin oxide (ITO) or indium zinc oxide (IZO), to improve the light transmission efficiency.

[0095] The above-mentioned second organic layer can play the roles of insulation and planarization, and its materials can include organic resin materials such as polyacrylic resin, polyepoxyacrylic resin, polyester acrylate, and polyurethane acrylate resin. The materials of the above-mentioned second organic layer and the first organic layer can be the same or different, and no limitation is made here.

[0096] The above-mentioned second passivation layer and third passivation layer can play the roles of protection and insulation, and their materials can include silicon nitride, silicon oxide, or silicon oxynitride. The materials of the above-mentioned second passivation layer, third passivation layer, and first passivation layer can be the same or different, and no limitation is made here.

[0097] To improve the conductivity, further optionally, as shown in Figure 10 the detection pixel unit further includes: a conductive electrode 20, which is located between the photoelectric conversion part and the second organic layer 16 and is in contact with the photoelectric conversion part.

[0098] Here, the orthographic projection of the conductive electrode on the substrate can be located within the orthographic projection of the photoelectric conversion part on the substrate. As shown in Figure 10 if the photoelectric conversion part includes a photoelectric conversion structure 15, then the orthographic projection of the conductive electrode on the substrate can be located within the orthographic projection of the photoelectric conversion structure on the substrate; at the same time, the conductive electrode can be in contact with the photoelectric conversion structure, so that the bias electrode can be electrically connected to the photoelectric conversion part through the second via hole and the conductive electrode.

[0099] The materials of the above-mentioned conductive electrode can include transparent conductive materials, such as indium tin oxide (ITO) or indium zinc oxide (IZO), to improve the light transmission efficiency.

[0100] Optionally, as shown in Figure 10 the photoelectric conversion part includes a reading electrode 11 and a photoelectric conversion structure 15; the photoelectric conversion structure 15 is arranged on the side of the reading electrode 11 away from the substrate 100; the photoelectric conversion structure 15 includes a first doping layer 151, an intrinsic layer 150, and a second doping layer 152 that are sequentially stacked on the reading electrode 11, and the polarities of the first doping layer and the second doping layer are opposite; the first doping layer 151 is in contact with the reading electrode 11, and the second doping layer 152 is in contact with the conductive electrode 20.

[0101] The above-mentioned first doping layer and second doping layer can respectively include N-type impurities or P-type impurities. The intrinsic layer does not include impurities. The thickness of the intrinsic layer can be greater than the thicknesses of the first doping layer and the second doping layer.

[0102] If the first doping layer includes N-type impurities and the second doping layer includes P-type impurities, the first doping layer is an N-type semiconductor layer and the second doping layer is a P-type semiconductor layer. At this time, a negative bias voltage can be input to the second doping layer through the bias electrode and the conductive electrode. If the first doping layer includes P-type impurities and the second doping layer includes N-type impurities, the first doping layer is a P-type semiconductor layer and the second doping layer is an N-type semiconductor layer. At this time, a positive bias voltage can be input to the second doping layer through the bias electrode and the conductive electrode.

[0103] Optionally, as shown in Figure 1 FIG. 5, the detection substrate further includes a plurality of gate lines 7 arranged along a first direction and a plurality of data lines 6 arranged along a second direction; wherein, as shown in Figure 2 FIG. 6, in the detection pixel unit, the orthographic projection of the sacrificial layer 10 on the substrate does not overlap with the orthographic projection of the gate line 7 on the substrate, and the orthographic projection of the sacrificial layer 10 on the substrate does not overlap with the orthographic projection of the data line 6 on the substrate.

[0104] It should be noted that, as shown in Figure 1 FIG. 7, the gate lines 7 and the data lines 6 intersect with each other to form a plurality of defined regions; wherein, the detection pixel unit 1 is located within the defined region, and the first direction and the second direction intersect. Figure 1 FIG. 8 shows an example in which the first direction and the second direction are perpendicularly intersected. The gate line is electrically connected to at least the gates of the thin film transistors of a row of detection pixel units arranged along the second direction, and the data line is electrically connected to at least the second electrodes of the thin film transistors of a row of detection pixel units arranged along the first direction.

[0105] The above detection pixel unit can be set to be strip-shaped, and the first direction can be the OB direction (i.e., the long side direction of the detection pixel unit) as shown in Figure 1 FIG. 9. At this time, the second direction can be the OA direction (i.e., the short side direction of the detection pixel unit) as shown in Figure 1 FIG. 10. Or, the first direction can also be the OA direction (i.e., the short side direction of the detection pixel unit) as shown in Figure 1 FIG. 11. At this time, the second direction can be the OB direction (i.e., the long side direction of the detection pixel unit) as shown in Figure 1 FIG. 12. This is not limited here. Figure 1 FIG. 13 shows an example in which the first direction is the OB direction and the second direction is the OA direction.

[0106] The above statement that the gate line is electrically connected to at least the gates of the thin film transistors of a row of detection pixel units arranged along the second direction means that, as shown in Figure 1 FIG. 14 Figure 2 and Figure 1 FIG. 15, the gate line 7 is only connected to a row (i.e., Figure 1detect the gate electrical connection of the thin film transistor 12 of the detection pixel unit 1 in one row; or, the gate line is electrically connected to the gates of the thin film transistors of multiple rows of detection pixel units arranged along the second direction, which is not limited here.

[0107] The above-mentioned data line is electrically connected to the second electrodes of the thin film transistors of at least one row of detection pixel units arranged along the first direction, which means that in combination with Figure 1 and Figure 2 as shown, the data line 6 is only electrically connected to the second electrodes of the thin film transistors of one row (i.e., Figure 1 one column in Figure 1 ) of the detection pixel units 1 arranged along the first direction (

[0108] The above-mentioned gate line can be arranged on the same layer as the gate of the thin film transistor, and the data line can be arranged on the same layer as the first and second electrodes of the thin film transistor to reduce the number of patterning processes and lower the cost. Here, arranging on the same layer means fabricating using one patterning process. One patterning process refers to the process of forming the required layer structure through one film deposition and lithography. One patterning process includes processes such as film deposition, exposure, development, etching, and stripping.

[0109] In the above-mentioned detection substrate, the gate line can provide a control signal to the gate of the thin film transistor to control the thin film transistor to turn on or off; the photoelectric conversion unit converts visible light into an electrical signal, which is output through the thin film transistor and transmitted to the processing unit through the data line, and the processing unit processes the electrical signal to realize image display.

[0110] Further optionally, referring to Figure 2 as shown, in the detection pixel unit, the sacrificial layer 10 includes a connected first part 21 and a second part 22, and the part of the first part 21 close to the gate line 7 or the data line 6 protrudes from the second part 22. Figure 2 In

[0111] only for clearly distinguishing the first part and the second part, a black dotted line is used to separate the two parts, but actually this dotted line does not exist.

[0112] Referring to Figure 2 as shown, the orthographic projection of the thin film transistor on the substrate is located within the orthographic projection of the first part 21 of the sacrificial layer 10 on the substrate, and the orthographic projection of the second part 22 on the substrate does not overlap with the orthographic projection of the thin film transistor on the substrate.

[0113] The first part of the above-mentioned sacrificial layer that is close to the gate line or data line protrudes from the second part. On the one hand, it can expand the coverage range of the sacrificial layer as much as possible without increasing the original design area, ensuring that the orthographic projection of the thin-film transistor on the substrate is within the orthographic projection of the first part on the substrate to protect the entire thin-film transistor; on the other hand, it is beneficial to improve the filling rate of the photoelectric conversion part to further enhance the detection accuracy.

[0114] Since the line width directly affects the resistance of the data line and gate line, and thus affects the data transmission rate. By adopting the above-mentioned line width design structure of the data line and gate line, on the one hand, it can reduce the influence on the line width of the data line and gate line as much as possible, thereby ensuring the data transmission rate; on the other hand, it can make full use of the original design area without adding extra design area to ensure the detection accuracy of the detection substrate.

[0115] Further optionally, the detection pixel unit further includes: a bias electrode, and the bias electrode is electrically connected to the photoelectric conversion part; the detection substrate further includes a plurality of bias lines arranged along the second direction, and the bias lines are electrically connected to the bias electrodes of at least one row of detection pixel units arranged along the first direction.

[0116] Reference Figure 3a and Figure 3b As shown, the detection pixel unit further includes: a second organic layer 16, a second passivation layer 17, and a third passivation layer 19 that are sequentially stacked on the photoelectric conversion structure 15, and the bias electrode 18 is located between the second passivation layer 17 and the third passivation layer 19.

[0117] The above-mentioned bias lines are electrically connected to the bias electrodes of at least one row of detection pixel units arranged along the first direction, which means: as shown in the reference Figure 1 shown, the bias line 5 is only electrically connected to the bias electrodes of one row (i.e., Figure 1 one column in the OB direction in Figure 1 shown) of detection pixel units arranged along the first direction; or, the bias line is electrically connected to the bias electrodes of multiple rows of detection pixel units arranged along the first direction.

[0118] The above-mentioned bias lines can be arranged on the same layer as the data line, the first pole, and the second pole of the thin-film transistor to reduce the number of lithography processes and lower the cost.

[0119] In this detection substrate, a bias signal can be input to the bias electrode through the bias line, and then a bias voltage can be provided to the photoelectric conversion part.

[0120] It should be noted that, referring to the reference Figure 1As shown, the above-mentioned detection substrate may further include a gate driving unit 3, a processing unit 4, and a bias driving unit 2. Among them, the gate driving unit 3 is connected to a plurality of gate lines 7 to provide control signals to the gate lines. The processing unit 4 is connected to a plurality of data lines 6 to acquire and process the electrical signals output by the data lines. The bias driving unit 2 is connected to a plurality of bias lines 5 to provide bias signals to the bias lines. Here, the specific structures of the gate driving unit, the processing unit, and the bias driving unit are not limited. Figure 1 Only taking the detection substrate including three rows and four columns of detection pixel units as an example for illustration.

[0121] In addition, the above-mentioned detection substrate may further include an organic encapsulation layer and a scintillator layer sequentially located above the third passivation layer, and the scintillator layer can convert X-rays into visible light.

[0122] Optionally, the material of the active layer includes any one of indium gallium zinc oxide (Indium Gallium Zinc Oxide, IGZO), indium tin zinc oxide (Indium Tin Zinc Oxide, ITZO), gallium indium tin oxide (Gallium Indium Tin Oxide, GITO), and indium gallium zinc tin oxide (Indium Gallium Zinc Tin Oxide, IGZTO). The carrier mobility of this thin-film transistor is high, which can meet the requirements of a dynamic X-ray flat panel detector.

[0123] The material of the sacrificial layer includes any one of indium zinc oxide (Indium Zinc Oxide, IZO), indium tin oxide (Indium Tin Oxide, ITO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), and gallium indium tin oxide (GITO). This sacrificial layer is more likely to react with hydrogen atoms and can consume more hydrogen atoms, thereby further protecting the thin-film transistor.

[0124] An embodiment of the present invention further provides a flat panel detector including the above-mentioned detection substrate. This flat panel detector can be an X-ray flat panel detector, which can be applied in the fields of medical treatment, security, industrial inspection, etc., and has advantages such as stable performance and fast response speed. The relevant structural description of the detection substrate included in this flat panel detector can refer to the above embodiment, and will not be elaborated here.

[0125] An embodiment of the present invention also provides a manufacturing method of the above-mentioned detection substrate. The structure of this detection substrate can refer to Figures 3a - 3c As shown, this method includes:

[0126] S01. Form a plurality of detection pixel units on the substrate.

[0127] The material of the substrate is not limited, and it may include a rigid material, such as glass; or, it may also include a flexible material, such as polyimide (PI).

[0128] Among them, S01, forming a plurality of detection pixel units on the substrate includes:

[0129] S101, forming a plurality of thin film transistors; the thin film transistors include an active layer, a first electrode, and a second electrode, the first electrode and the second electrode are electrically connected to the active layer respectively, and the material of the active layer includes metal oxide.

[0130] Here, the specific method for forming a plurality of thin film transistors is not limited and needs to be determined according to the specific structure of the thin film transistors.

[0131] S102, forming a plurality of independent sacrificial layers; in the detection pixel unit, at least a part of the positive projection of the active layer on the substrate is located within the positive projection of the sacrificial layer on the substrate; the material of the sacrificial layer includes metal oxide.

[0132] The material of the sacrificial layer may include any one of indium zinc oxide (IZO), indium tin oxide (ITO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), and indium gallium tin oxide (GITO).

[0133] S103, forming a plurality of independent photoelectric conversion parts; in the detection pixel unit, the photoelectric conversion parts are electrically connected to the sacrificial layer and the first electrode respectively.

[0134] Below, taking Figure 3a the shown detection substrate as an example, its manufacturing method will be specifically described. The method includes:

[0135] S11, sequentially forming a stacked gate metal layer, a gate insulating layer, an active layer, a source-drain metal layer, a first passivation layer, and a first organic layer on the substrate; wherein, the gate metal layer includes a plurality of gate electrodes, and the source-drain metal layer includes a plurality of first electrodes and a plurality of second electrodes.

[0136] S12, etching the first passivation layer and the first organic layer to form a plurality of first vias 141 as shown in Figure 7 , and further forming a detection substrate as shown in Figure 7 . Referring to Figure 7 , the first via 141 penetrates through the first passivation layer 13 and the first organic layer 14 to expose the first electrode 121.

[0137] S13, depositing and patterning a metal oxide thin film to form a plurality of independent sacrificial layers, and further forming a detection substrate as shown in Figure 8 . Referring to Figure 8As shown, the orthographic projection of the sacrificial layer 10 on the substrate does not overlap with the orthographic projection of the first via on the substrate.

[0138] Figure 8 In [description], the entire orthographic projection of the active layer 123 on the substrate is located within the orthographic projection of the sacrificial layer 10 on the substrate, that is, the sacrificial layer 10 covers the entire active layer 123. The material of the metal oxide thin film may include indium tin oxide (ITO).

[0139] S14. Form a plurality of read electrodes 11 as shown in Figure 9 .

[0140] Refer to Figure 9 As shown, the read electrode 11 also covers the first via and is in direct contact with the first electrode 121 through the first via to achieve electrical connection. The read electrode 11 is located above the sacrificial layer 10 and in contact with the sacrificial layer 10. The material of the read electrode may include metal or metal alloy. To improve the reading speed, the read electrode can be made of a metal with high conductivity, such as molybdenum, aluminum, silver, copper, titanium, platinum, tungsten.

[0141] S15. Form a plurality of photo - electric conversion structures 15 as shown in Figure 3a . The orthographic projection of the photo - electric conversion structure on the substrate does not overlap with the orthographic projection of the first via on the substrate.

[0142] Specifically, the first doped layer, the intrinsic layer, and the second doped layer which are stacked can be formed in sequence by CVD (Chemical Vapor Deposition) method. The first doped layer is in contact with the read electrode.

[0143] S16. Refer to Figure 3a As shown, the second organic layer 16, the second passivation layer 17, the bias electrode 18, and the third passivation layer 19 which are stacked are formed in sequence on the photo - electric conversion structure 15.

[0144] Among them, the bias electrode is electrically connected to the photo - electric conversion part through the second via, and the second via penetrates the second organic layer and the second passivation layer.

[0145] The above - mentioned second passivation layer and third passivation layer can play a role in protection and insulation, and their materials may include silicon nitride, silicon oxide, or silicon oxynitride. The above - mentioned second organic layer can play a role in insulation and planarization, and its materials may include organic resin materials such as polyacrylic acid resin, polyepoxy acrylic acid resin, polyester acrylate, polyurethane acrylate resin, etc.

[0146] In process step S15, and in the process step of making the second passivation layer and the third passivation layer in S16, both are in a high concentration hydrogen atom (H Plasma) atmosphere. The metal oxide thin film transistor is extremely susceptible to the influence of water and oxygen. In particular, hydrogen atoms will directly reduce the metal oxide active layer to a metal element, thereby causing it to lose its switching characteristics. The above-mentioned sacrificial layer covers the active layer of all thin film transistors and can react with hydrogen atoms, thereby consuming and blocking hydrogen atoms, thereby preventing hydrogen atoms from penetrating into the thin film transistor and avoiding the thin film transistor from being reduced as much as possible, thereby greatly improving the stability of the thin film transistor and thus improving the performance of the flat panel detector. In addition, in each detection pixel unit, the sacrificial layer is in contact with the reading electrode, so no capacitance is generated between the two; at the same time, the sacrificial layers of each detection pixel unit are independent of each other (that is, the sacrificial layer is made into a pixel level), thereby avoiding the sacrificial layers of different detection pixel units from affecting each other, thereby solving the signal crosstalk problem and further improving product performance.

[0147] The above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any modifications or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A detection substrate, characterized in that, It includes a substrate and a plurality of detection pixel units arranged in an array on the substrate; The detection pixel unit includes: a thin-film transistor, a sacrificial layer, and a photoelectric conversion part disposed on the substrate; the sacrificial layer is located between the thin-film transistor and the photoelectric conversion part; the material of the sacrificial layer includes metal oxide, and the metal oxide reacts with hydrogen atoms; Wherein, the thin-film transistor includes an active layer, a first electrode, and a second electrode; at least a partial orthographic projection of the active layer on the substrate is located within the orthographic projection of the sacrificial layer on the substrate; the photoelectric conversion part is electrically connected to the sacrificial layer and the first electrode respectively; In the detection substrate, the sacrificial layers of the respective detection pixel units are independent of each other; The detection pixel unit further includes a first passivation layer, a first organic layer, and a first via hole that penetrates the first passivation layer and the first organic layer to expose the first electrode; The sacrificial layer is not in contact with the first electrode; The orthographic projection of the sacrificial layer on the substrate and the orthographic projection of the first via hole on the substrate do not overlap or partially overlap.

2. A detection substrate, characterized in that, It includes a substrate and a plurality of detection pixel units arranged in an array on the substrate; The detection pixel unit includes: a thin-film transistor, a sacrificial layer, and a photoelectric conversion part disposed on the substrate; the sacrificial layer is located between the thin-film transistor and the photoelectric conversion part; the material of the sacrificial layer includes any one of indium zinc oxide, indium tin oxide, indium gallium zinc oxide, indium tin zinc oxide, indium gallium tin oxide; Wherein, the thin-film transistor includes an active layer, a first electrode, and a second electrode; at least a partial orthographic projection of the active layer on the substrate is located within the orthographic projection of the sacrificial layer on the substrate; the photoelectric conversion part is electrically connected to the sacrificial layer and the first electrode respectively; In the detection substrate, the sacrificial layers of the respective detection pixel units are independent of each other; The detection pixel unit further includes a first passivation layer, a first organic layer, and a first via hole that penetrates the first passivation layer and the first organic layer to expose the first electrode; The sacrificial layer is not in contact with the first electrode; The orthographic projection of the sacrificial layer on the substrate and the orthographic projection of the first via hole on the substrate do not overlap or partially overlap.

3. The detection substrate according to claim 1 or 2, characterized in that, The photoelectric conversion part is disposed on a side of the thin-film transistor away from the substrate.

4. The detection substrate according to claim 3, characterized in that, The orthographic projection of the active layer on the substrate is located within the orthographic projection of the sacrificial layer on the substrate.

5. The detection substrate according to claim 1 or 2, characterized in that, The photoelectric conversion part includes a reading electrode; In each of the detection pixel units, the sacrificial layer is in contact with the reading electrode.

6. The detection substrate according to claim 5, wherein The reading electrode is in contact with the first electrode through the first via hole.

7. The detection substrate according to claim 6, wherein At least a partial boundary of the orthographic projection of the reading electrode on the substrate is located within the boundary of the orthographic projection of the sacrificial layer on the substrate.

8. The detection substrate according to claim 6, characterized in that The photoelectric conversion part further includes a photoelectric conversion structure disposed on a side of the reading electrode away from the substrate; The orthographic projection of the photoelectric conversion structure on the substrate does not overlap with the orthographic projection of the first via hole on the substrate.

9. The detection substrate according to claim 8, wherein, The boundary of the positive projection of the optoelectronic conversion structure on the substrate is located within the boundary of the positive projection of the reading electrode on the substrate.

10. The detection substrate according to claim 3, characterized in that, The detection pixel unit further includes: a second organic layer, a second passivation layer, a bias electrode, and a third passivation layer, which are sequentially stacked on the optoelectronic conversion part; Wherein, the bias electrode is electrically connected to the optoelectronic conversion part through a second via hole, and the second via hole penetrates through the second organic layer and the second passivation layer.

11. The detection substrate according to claim 10, characterized in that, The detection pixel unit further includes: a conductive electrode, which is located between the optoelectronic conversion part and the second organic layer and is in contact with the optoelectronic conversion part.

12. The detection substrate according to claim 11, wherein The optoelectronic conversion part includes a reading electrode and an optoelectronic conversion structure; the optoelectronic conversion structure is arranged on the side of the reading electrode away from the substrate; the optoelectronic conversion structure includes a first doped layer, an intrinsic layer, and a second doped layer that are sequentially stacked on the reading electrode, and the polarities of the first doped layer and the second doped layer are opposite; The first doped layer is in contact with the reading electrode, and the second doped layer is in contact with the conductive electrode.

13. The detection substrate according to claim 1 or 2, wherein The detection substrate further includes a plurality of gate lines arranged along a first direction and a plurality of data lines arranged along a second direction; wherein, in the detection pixel unit, the positive projection of the sacrificial layer on the substrate does not overlap with the positive projection of the gate line on the substrate, and the positive projection of the sacrificial layer on the substrate does not overlap with the positive projection of the data line on the substrate.

14. The detection substrate according to claim 13, wherein In the detection pixel unit, the sacrificial layer includes a connected first part and a second part, and the part of the first part close to the gate line or the data line protrudes from the second part, so that the line width of the part of the data line close to the first part is smaller than the line width of the part close to the second part, and the line width of the part of the gate line close to the first part is smaller than the line width of the part close to the second part.

15. The detection substrate according to claim 14, wherein The detection pixel unit further includes: a bias electrode, which is electrically connected to the optoelectronic conversion part; The detection substrate further includes a plurality of bias lines arranged along the second direction, and the bias lines are electrically connected to the bias electrodes of at least one row of the detection pixel units arranged along the first direction.

16. A flat panel detector, characterized in that, Including the detection substrate according to any one of claims 1-15.

Images