Light-emitting device, method for manufacturing the same, and display device

Abstract

The present disclosure provides a light-emitting device, a manufacturing method thereof, and a display device, relating to the field of display technologies. The light-emitting device includes: a light-emitting unit located on one side of a backplane; and a packaging layer located on a side of the light-emitting unit away from the backplane. The packaging layer includes: a first inorganic layer; a second inorganic layer located on a side of the first inorganic layer away from the backplane; an organic layer located between the first inorganic layer and the second inorganic layer; and a third inorganic layer located between the first inorganic layer and the organic layer. The refractive index of the first inorganic layer, the refractive index of the third inorganic layer, and the refractive index of the organic layer decrease in sequence.

Description

Technical Field

[0001] The present disclosure relates to the field of display technologies, and particularly to a light-emitting device, a manufacturing method thereof, and a display device. Background Art

[0002] With the development of display technologies, organic light-emitting diodes (OLEDs) have developed rapidly due to their own advantages.

[0003] For light-emitting devices such as OLEDs, luminous efficiency is an index for evaluating the performance of the light-emitting device. Summary of the Invention

[0004] In related technologies, in order to improve the luminous efficiency of a light-emitting device, the layer structure below the encapsulation layer of the light-emitting device is adjusted.

[0005] The inventors have noticed that such a method has limited improvement in luminous efficiency, and the implementation difficulty and cost are relatively high.

[0006] In order to further improve the luminous efficiency of the light-emitting device, the embodiments of the present disclosure provide the following technical solutions.

[0007] According to one aspect of the embodiments of the present disclosure, a light-emitting device is provided, including: a light-emitting unit located on one side of a backplane; and an encapsulation layer located on the side of the light-emitting unit away from the backplane. The encapsulation layer includes: a first inorganic layer; a second inorganic layer located on the side of the first inorganic layer away from the backplane; an organic layer located between the first inorganic layer and the second inorganic layer; and a third inorganic layer located between the first inorganic layer and the organic layer. The refractive index of the first inorganic layer, the refractive index of the third inorganic layer, and the refractive index of the organic layer decrease in sequence.

[0008] In some embodiments, the third inorganic layer includes at least one layer, and the refractive index of each layer in the at least one layer is n1, and the refractive indices of the two layers adjacent to each layer in the at least one layer in the first inorganic layer, the at least one layer, and the organic layer are n2 and n3, and the absolute value of the difference between (n1) 2 and (n2×n3) is greater than or equal to 0 and less than 0.1.

[0009] In some embodiments, the at least one layer includes one layer.

[0010] In some embodiments, the thickness d of each layer in the at least one layer is (2K + 1)*λ / 4, where K is an integer and λ is the wavelength of the light emitted by the light-emitting unit.

[0011] In some embodiments, the absolute value of the difference in refractive indices between two adjacent layers in the first inorganic layer, the at least one layer, and the organic layer ranges from 0.01 to 0.1.

[0012] In some embodiments, the refractive index of each layer in the at least one layer ranges from 1.45 to 1.76.

[0013] In some embodiments, the at least one layer includes: a first layer having a refractive index ranging from 1.57 to 1.76; and a second layer located between the first layer and the organic layer, the second layer having a refractive index ranging from 1.45 to 1.55.

[0014] In some embodiments, the refractive index of the first inorganic layer ranges from 1.7 to 2; and the refractive index of the organic layer ranges from 1.45 to 1.55.

[0015] In some embodiments, the ratio of the thickness of each layer in the at least one layer to the thickness of the first inorganic layer ranges from 1:8 to 1:12.

[0016] In some embodiments, the thickness of each layer in the at least one layer ranges from 20 nanometers to 200 nanometers.

[0017] In some embodiments, the at least one layer includes: a first layer having a thickness ranging from 50 nanometers to 200 nanometers; and a second layer located between the first layer and the organic layer.

[0018] In some embodiments, the thickness of the first inorganic layer ranges from 500 nanometers to 1500 nanometers; and the thickness of the organic layer ranges from 4 micrometers to 16 micrometers.

[0019] In some embodiments, the material of the third inorganic layer includes silicon oxynitride.

[0020] In some embodiments, the material of the first inorganic layer includes silicon oxynitride.

[0021] In some embodiments, the light-emitting unit includes a microcavity structure, the microcavity structure including: an anode located on the one side of the backplane; a light-emitting layer located on a side of the anode away from the backplane; a cathode located on a side of the light-emitting layer away from the anode; and a light-extracting layer located on a side of the cathode away from the light-emitting layer, the refractive index of the light-extracting layer being less than the refractive index of the organic layer.

[0022] In some embodiments, the surface of the third inorganic layer in contact with the organic layer has protrusions.

[0023] In some embodiments, the arithmetic mean deviation of the surface profile is greater than 10 nanometers.

[0024] According to another aspect of the embodiments of the present disclosure, a display device is provided, including: the backplane; a plurality of pixel units located on one side of the backplane, and at least one pixel unit among the plurality of pixel units includes the light-emitting device described in any one of the above embodiments.

[0025] According to still another aspect of the embodiments of the present disclosure, a method for manufacturing a light-emitting device is provided, including: forming a light-emitting unit on one side of a backplane; and forming a packaging layer on a side of the light-emitting unit away from the backplane, including: forming a first inorganic layer, forming a third inorganic layer on a side of the first inorganic layer away from the backplane, forming an organic layer on a side of the third inorganic layer away from the first inorganic layer, and forming a second inorganic layer on a side of the organic layer away from the third inorganic layer, wherein the refractive index of the first inorganic layer, the refractive index of the third inorganic layer, and the refractive index of the organic layer decrease in sequence.

[0026] In some embodiments, forming the third inorganic layer includes: forming the third inorganic layer by using a chemical vapor deposition process, and the power applied during the formation of the third inorganic layer changes from a non-zero value to 0 at a certain moment, so that the surface of the third inorganic layer in contact with the organic layer has the protrusion.

[0027] In the light-emitting device provided by the embodiments of the present disclosure, in the packaging layer, the refractive index of the first inorganic layer, the refractive index of the third inorganic layer, and the refractive index of the organic layer decrease in sequence. Such a packaging layer is beneficial to improving the light transmittance, thereby improving the light-emitting efficiency of the light-emitting device.

[0028] Other features, aspects, and advantages of the present disclosure will become clear through the following detailed description of the exemplary embodiments of the present disclosure with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The accompanying drawings form a part of this specification, which describe the exemplary embodiments of the present disclosure and are used to explain the principles of the present disclosure together with the specification.

[0030] Referring to the accompanying drawings, the present disclosure can be more clearly understood according to the following detailed description. In the drawings:

[0031] Figure 1 is a schematic structural diagram of a light-emitting device according to an embodiment of the present disclosure;

[0032] Figure 2 is a schematic structural diagram of a light-emitting device according to another embodiment of the present disclosure;

[0033] Figure 3 is a schematic structural diagram of a light-emitting device according to still another embodiment of the present disclosure;

[0034] Figure 4 is a schematic structural diagram showing a light-emitting device according to still another embodiment of the present disclosure;

[0035] Figure 5 is a schematic flow diagram showing a manufacturing method of a light-emitting device according to an embodiment of the present disclosure.

[0036] It should be understood that the sizes of the respective parts shown in the drawings are not necessarily drawn in actual proportional relationships. In addition, the same or similar reference numerals denote the same or similar components. Detailed Description of Specific Embodiments

[0037] Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. The description of the exemplary embodiments is merely illustrative and in no way limits the present disclosure and its application or use. The present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. These embodiments are provided to make the present disclosure thorough and complete, and to fully convey the scope of the present disclosure to those skilled in the art. It should be noted that: unless otherwise specifically stated, the relative arrangements of components and steps, the compositions of materials, numerical expressions and values set forth in these embodiments should be construed as merely exemplary and not as limitations.

[0038] The terms "first", "second" and similar terms used in the present disclosure do not denote any order, quantity or importance, but are merely used to distinguish different parts. Terms such as "comprising" or "including" mean that the elements before such terms cover the elements listed after such terms, and do not exclude the possibility of also covering other elements. Terms such as "upper" and "lower" are only used to represent relative positional relationships, and when the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0039] In the present disclosure, when it is described that a specific component is located between a first component and a second component, there may or may not be an intermediate component between the specific component and the first component or the second component. When it is described that a specific component is connected to other components, the specific component may be directly connected to the other components without an intermediate component, or may not be directly connected to the other components but have an intermediate component.

[0040] All terms used in the present disclosure (including technical terms or scientific terms) have the same meaning as understood by those of ordinary skill in the art to which the present disclosure pertains, unless otherwise specifically defined. It should also be understood that terms defined in a general dictionary such as should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and should not be interpreted in an idealized or overly formal sense, unless specifically defined as such herein.

[0041] Techniques, methods, and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered as part of the specification.

[0042] The inventors of the present disclosure have found through research that by adjusting the relationship between the refractive indices of the organic layer and the inorganic layer in the encapsulation layer of a light-emitting device, the light-emitting efficiency and color shift of the light-emitting device can be adjusted. Accordingly, the embodiments of the present disclosure propose the following technical solutions.

[0043] Figure 1 FIG. is a schematic structural diagram of a light-emitting device according to an embodiment of the present disclosure.

[0044] As Figure 1 shown, the light-emitting device may include a light-emitting unit 10 and an encapsulation layer 20.

[0045] The light-emitting unit 10 is located on one side of the backplane BP. Here, a driving circuit for driving the light-emitting device to emit light may be provided in the backplane BP, and the driving circuit may include components such as thin-film transistors and capacitors. The light-emitting unit 10 may include, for example, a red light-emitting unit R, a green light-emitting unit G, or a blue light-emitting unit B. In some embodiments, the light-emitting unit 10 may be an OLED.

[0046] The encapsulation layer 20 is located on the side of the light-emitting unit 10 away from the backplane BP. The encapsulation layer 20 may be a thin-film encapsulation layer, for example. The encapsulation layer 20 includes a first inorganic layer 21, a second inorganic layer 22, an organic layer 23, and a third inorganic layer 24. The second inorganic layer 22 is located on the side of the first inorganic layer 21 away from the backplane BP, the organic layer 23 is located between the first inorganic layer 21 and the second inorganic layer 22, and the third inorganic layer 24 is located between the first inorganic layer 21 and the organic layer 23. The refractive index of the first inorganic layer 21, the refractive index of the third inorganic layer 24, and the refractive index of the organic layer 23 decrease in sequence.

[0047] In some embodiments, the material of the third inorganic layer 24 includes silicon oxynitride. In some embodiments, the material of the first inorganic layer 21 includes silicon oxynitride. In some embodiments, the material of the second inorganic layer 22 includes silicon nitride.

[0048] In the above embodiments, in the encapsulation layer 20, the refractive index of the first inorganic layer 21, the refractive index of the third inorganic layer 24, and the refractive index of the organic layer 23 decrease in sequence. Such an encapsulation layer 20 is beneficial to improving the light transmittance, thereby improving the light-emitting efficiency of the light-emitting device. In addition, such an encapsulation layer 20 is also beneficial to reducing the color shift of the light-emitting device.

[0049] The third inorganic layer 24 in the encapsulation layer 20 includes at least one layer. For example, the third inorganic layer 24 includes only one layer, such as Figure 1As shown; for another example, the third inorganic layer 24 includes multiple layers, such as two or more layers, as Figure 2 shown. In some embodiments, when the third inorganic layer 24 includes multiple layers, the refractive indices of the multiple layers of the third inorganic layer 24 gradually decrease in the direction from the backplane BP to the light-emitting unit 10.

[0050] Figure 2 is a schematic structural diagram of a light-emitting device according to another embodiment of the present disclosure.

[0051] As Figure 2 shown, the third inorganic layer 24 includes a first layer 241 and a second layer 242 located between the first layer 241 and the organic layer 23. It should be understood that the third inorganic layer 24 may further include more layers other than the first layer 241 and the second layer 242.

[0052] Some specific implementation manners of the refractive indices of the first inorganic layer 21, the third inorganic layer 24, and the organic layer 23 are introduced below.

[0053] Hereinafter, for convenience of description, the refractive index of each layer in the third inorganic layer 24 is defined as n1, and the refractive indices of the two layers adjacent to each layer in the third inorganic layer 24 among the first inorganic layer 21, at least one layer of the third inorganic layer 24, and the organic layer 23 are defined as n2 and n3.

[0054] For example, when the third inorganic layer 24 includes only one layer, the two layers adjacent to the third inorganic layer 24 are the first inorganic layer 21 and the organic layer 23.

[0055] For another example, when the third inorganic layer 24 includes two layers, the two layers adjacent to one of the two layers in the third inorganic layer 24 are one of the first inorganic layer 21 and the organic layer 23, and the other of the two layers in the third inorganic layer 24.

[0056] For still another example, when the third inorganic layer 24 includes three layers, the two layers adjacent to the middle layer among the three layers in the third inorganic layer 24 are the other two of the three layers, and the two layers adjacent to one of the other two layers outside the middle layer in the third inorganic layer 24 are one of the first inorganic layer 21 and the organic layer 23, and the other of the other two layers in the third inorganic layer 24.

[0057] In some embodiments, the absolute value of the difference between (n1) 2 and (n2 × n3) is greater than or equal to 0 and less than 0.1. In such a manner, each layer in the third inorganic layer 24 of the encapsulation layer 20 is beneficial to improving the light transmittance, and thus the light-emitting efficiency of the light-emitting device can be further improved. As some implementation manners, the difference between (n1) 2 and (n2 × n3) is 0.03, 0.05, 0.07, etc.

[0058] The inventors also noticed that by adjusting the difference in refractive index between adjacent two layers, the light transmittance can be further improved. In some embodiments, the absolute value of the difference in refractive index between adjacent two layers of at least one of the first inorganic layer 21 and the third inorganic layer 24 and the organic layer 23 ranges from 0.01 to 0.1. For example, 0.04, 0.06, etc. Thus, the light transmittance can be further improved.

[0059] For example, when the third inorganic layer 24 includes only one layer, the absolute value of the difference in refractive index between the refractive index of the first inorganic layer 21 and the refractive index of the third inorganic layer 24 ranges from 0.01 to 0.1, and the absolute value of the difference in refractive index between the refractive index of the organic layer 23 and the refractive index of the third inorganic layer 24 ranges from 0.01 to 0.1.

[0060] For another example, when the third inorganic layer 24 includes multiple layers, the absolute value of the difference in refractive index between the refractive index of the layer adjacent to the first inorganic layer 21 in the third inorganic layer 24 and the refractive index of the first inorganic layer 21 ranges from 0.01 to 0.1, the absolute value of the difference in refractive index between the refractive index of the layer adjacent to the organic layer 23 in the third inorganic layer 24 and the refractive index of the organic layer 23 ranges from 0.01 to 0.1, and the absolute value of the difference in refractive index between adjacent two layers in the third inorganic layer 24 ranges from 0.01 to 0.1.

[0061] In some embodiments, the refractive index of each layer in the third inorganic layer 24 ranges from 1.45 to 1.76. For example, when the third inorganic layer 24 includes Figure 2 the first layer 241 and the second layer 242 as shown, the refractive index of the first layer 241 ranges from 1.57 to 1.76, such as 1.6, 1.65, 1.7, etc.; the refractive index of the second layer 242 located between the first layer 241 and the organic layer 23 ranges from 1.45 to 1.55, such as 1.5, 1.52, etc.

[0062] In some embodiments, the refractive index of each layer in the third inorganic layer 24 ranges from 1.45 to 1.76, such as 1.5, 1.6, 1.63, 1.7, etc.; the refractive index of the first inorganic layer 21 ranges from 1.7 to 2, such as 1.73, 1.8, 1.9, etc.; the refractive index of the organic layer 23 ranges from 1.45 to 1.55, such as 1.47, 1.5, 1.52, etc. In some embodiments, the refractive index of the second inorganic layer 22 ranges from 1.8 to 1.9, such as 1.84, 1.85, etc.

[0063] In some embodiments, (n1) 2The absolute value of the difference between (n2×n3) is greater than or equal to 0 and less than 0.1, and the thickness d of each layer in the third inorganic layer 24 is (2K + 1)*λ / 4, where K is an integer and λ is the wavelength of the light emitted by the light-emitting unit 10. In such a manner, each layer in the third inorganic layer 24 of the encapsulation layer 20 is more conducive to improving the light transmittance, thereby further improving the luminous efficiency of the light-emitting device.

[0064] The inventors further found through research that by adjusting the ratio of the thickness of each layer in the third inorganic layer 24 to the thickness of the first inorganic layer 21, the light transmittance can be further improved. In some embodiments, the ratio range of the thickness of each layer in the third inorganic layer 24 to the thickness of the first inorganic layer 21 is from 1:8 to 1:12. For example, 1:4, 1:6, 1:10, etc. Thus, the light transmittance can be further improved.

[0065] In some embodiments, the thickness range of each layer in the third inorganic layer 24 is from 20 nanometers to 200 nanometers. For example, 40 nanometers, 80 nanometers, 150 nanometers, etc. For example, Figure 2 The thickness range of the shown first layer 241 is from 50 nanometers to 200 nanometers. For example, 100 nanometers, 150 nanometers, 180 nanometers, etc. Figure 2 The thickness range of the shown second layer 242 located between the first layer 241 and the organic layer 23 is from 20 nanometers to 200 nanometers.

[0066] In some embodiments, the thickness range of each layer in the third inorganic layer 24 is from 20 nanometers to 200 nanometers. For example, 40 nanometers, 80 nanometers, 150 nanometers, etc.; the thickness range of the first inorganic layer is from 500 nanometers to 1500 nanometers. For example, 600 nanometers, 800 nanometers, 900 nanometers, 1000 nanometers, 1200 nanometers, etc.; the thickness range of the organic layer 23 is from 4 micrometers to 16 micrometers. For example, 6 micrometers, 8 micrometers, 10 micrometers, 12 micrometers, etc. In some embodiments, the thickness of the second inorganic layer 22 is from 500 nanometers to 800 nanometers. For example, 600 nanometers, 700 nanometers, etc.

[0067] In some embodiments, the organic layer 23 is formed by an inkjet printing process. The raw materials used to form the organic layer 23 may include, for example, organic ink. The inventors noticed that reducing the thickness of the organic layer 23 is beneficial for cost savings, but reducing the thickness may lead to poor flatness of the organic layer 23, and further lead to poor display when the light-emitting device is applied to a display device.

[0068] In view of the above problems, the embodiments of the present disclosure also propose the following solutions.

[0069] Figure 3It is a schematic structural diagram of a light-emitting device according to another embodiment of the present disclosure.

[0070] Compared with Figure 1 the embodiment shown, Figure 3 the surface 24A of the third inorganic layer 24 in contact with the organic layer 23 shown has protrusions 24AP. In some embodiments, the number of protrusions 24AP can be multiple. The presence of the protrusions 24AP is beneficial to improving the flow of the raw materials for forming the organic layer 23, so that the organic layer 23 can still have a surface with high flatness even when the thickness is reduced.

[0071] In some embodiments, the arithmetic mean deviation of the profile (abbreviated as Ra) of the surface 24A of the third inorganic layer 24 in contact with the organic layer 23 is greater than 10 nanometers, such as 12 nanometers, 15 nanometers, 20 nanometers, etc. In this way, the flatness of the organic layer 23 can be ensured while reducing the thickness of the organic layer 23. For example, when the arithmetic mean deviation of the profile of the surface 24A is about 15 nanometers, the diffusion distance of the organic ink within the same time is about 800 micrometers, and when the thickness of the organic layer 23 is 4 micrometers, it will not cause poor display.

[0072] Figure 4 It is a schematic structural diagram of a light-emitting device according to still another embodiment of the present disclosure.

[0073] Compared with Figure 3 the embodiment shown, Figure 4 the surface 21A of the first inorganic layer 21 in contact with the third inorganic layer 24 shown has protrusions 21AP. In some embodiments, the number of protrusions 21AP can be multiple.

[0074] In Figure 4 the case shown, the third inorganic layer 24 can be conformally formed on the surface 21A of the first inorganic layer 24, so that the surface 24A of the third inorganic layer 24 in contact with the organic layer 203 has protrusions 24AP.

[0075] In some embodiments, referring to Figures 2 to 4 , the light-emitting unit 10 can include a microcavity structure. Here, the microcavity structure includes an anode 11 on one side of the backplane BP, a light-emitting layer 12 on the side of the anode 11 away from the backplane BP, a cathode 13 on the side of the light-emitting layer 12 away from the anode 11, and a light-extracting layer 14 on the side of the cathode 13 away from the light-emitting layer 12. In some embodiments, the microcavity structure of the light-emitting unit 10 further includes one or more of a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer.

[0076] Here, the refractive index of the light extraction layer 14 is less than that of the organic layer 23. In some embodiments, the refractive index of the light extraction layer 14 ranges from 1.3 to 1.5. For example, 1.35, 1.4, 1.45, etc.

[0077] In some embodiments, the material of the light extraction layer 14 may include lithium fluoride (LiF), oxides of silicon (such as silicon dioxide), aluminum oxide, etc. In some embodiments, the thickness of the light extraction layer 14 is greater than 0 nanometers and less than or equal to 100 nanometers. For example, it is 20 nanometers, 50 nanometers, 80 nanometers, etc.

[0078] In some embodiments, the material of the light-emitting layer 12 includes an organic light-emitting material.

[0079] It should be understood that by adjusting the thickness (which can also be referred to as the optical length) of the microcavity structure in the light-emitting unit 10, the interference of light of a specific wavelength can be enhanced, so that the light-emitting unit 10 emits high-brightness light. For example, by adjusting the thickness of the microcavity structure in the light-emitting unit 10, the red light-emitting unit R can emit high-brightness red light, the green light-emitting unit G can emit high-brightness green light, and the blue light-emitting unit B can emit high-brightness blue light.

[0080] In the above embodiments, in the microcavity structure of the light-emitting unit 10, the refractive index of the light extraction layer 14 is less than that of the organic layer 23. Additionally, in the encapsulation layer 20, the refractive indices of the first inorganic layer 21, the third inorganic layer 24, and the organic layer 23 decrease in sequence. Such a light-emitting unit 10 and encapsulation layer 20 can further improve the light transmittance, and thus further improve the light-emitting efficiency of the light-emitting device.

[0081] Embodiments of the present disclosure also provide a display device. The display device includes: a backplane BP and a plurality of pixel units located on one side (such as the upper side) of the backplane BP. At least one of the plurality of pixel units may include the light-emitting device of any one of the above embodiments. For example, each pixel unit includes the light-emitting device of any one of the above embodiments. It should be understood that in the embodiments of the present disclosure, the pixel unit may also be referred to as a sub-pixel.

[0082] In some embodiments, the plurality of pixel units include a plurality of red pixel units R, a plurality of green pixel units G, and a plurality of blue pixel units B. In some embodiments, in the light-emitting device of each pixel unit, the thickness d of each layer in the third inorganic layer 24 = (2K + 1)*λ / 4, where K is an integer and λ is the wavelength of blue light. Thus, by improving the light-emitting efficiency of the blue pixel unit B, the light-emitting efficiency of the entire display device can be improved.

[0083] In some embodiments, the display device may be, for example, any product or component with a display function such as a display panel, a mobile terminal, a television, a monitor (such as a microdisplay), a laptop computer, a digital photo frame, a navigator, an electronic paper, etc.

[0084] Figure 5 FIG. is a schematic flow chart showing a method of manufacturing a light-emitting device according to an embodiment of the present disclosure.

[0085] As Figure 5 shown, the method of manufacturing a light-emitting device includes step 502 and step 504.

[0086] In step 502, a light-emitting unit is formed on one side of a backplane. For example, the light-emitting unit may be an OLED. For example, the backplane may be formed by a Low Temperature Poly-silicon (LTPS) process.

[0087] In step 504, a packaging layer is formed on the side of the light-emitting unit away from the backplane.

[0088] Referring to Figure 5 , step 504 may include steps 514 to 544.

[0089] In step 514, a first inorganic layer is formed.

[0090] For example, the first inorganic layer may be formed by a Chemical Vapor Deposition (CVD) process. For example, the material of the first inorganic layer may include silicon oxynitride.

[0091] In step 524, a third inorganic layer is formed on the side of the first inorganic layer away from the backplane.

[0092] For example, the third inorganic layer may be formed by a CVD process. It should be understood that the third inorganic layer including one or more layers may be formed by a CVD process. The material of each layer in the third inorganic layer may include, for example, a silicon nitride layer.

[0093] In step 534, an organic layer is formed on the side of the third inorganic layer away from the first inorganic layer.

[0094] For example, the organic layer may be formed by an inkjet printing process.

[0095] In step 544, a second inorganic layer is formed on the side of the organic layer away from the third inorganic layer.

[0096] For example, the second inorganic layer may be formed by a CVD process.

[0097] The refractive index of the above-mentioned first inorganic layer, the refractive index of the above-mentioned third inorganic layer, and the refractive index of the above-mentioned organic layer decrease in sequence.

[0098] In the light-emitting device formed in the above-described embodiment, in the encapsulation layer, the refractive index of the first inorganic layer, the refractive index of the third inorganic layer, and the refractive index of the organic layer decrease in sequence. Such an encapsulation layer is beneficial to improving the light transmittance, thereby improving the light-emitting efficiency of the light-emitting device. In addition, such an encapsulation layer 20 is also beneficial to reducing the color shift of the light-emitting device.

[0099] In some embodiments, the power applied during the formation of the third inorganic layer changes from a non-zero value to 0 at a certain moment, so that the surface of the third inorganic layer in contact with the subsequent organic layer has protrusions.

[0100] For example, at the starting moment of forming the third inorganic layer, the applied power is 0; then, the applied power gradually increases to a predetermined power greater than 0; after that, at a certain moment, the applied power drops to 0; after that, the applied power gradually increases from 0 to the predetermined power again.

[0101] Since the applied power changes from a non-zero value to 0 at a certain moment, some incompletely reacted substances will be deposited on the middle surface of the formed third inorganic layer, thereby changing the surface roughness of the finally formed third inorganic layer. In this way, the surface roughness of the third inorganic layer can be increased.

[0102] So far, the embodiments of the present disclosure have been described in detail. In order to avoid obscuring the concept of the present disclosure, some details well known in the art have not been described. Those skilled in the art can fully understand how to implement the technical solutions disclosed herein based on the above description.

[0103] Although some specific embodiments of the present disclosure have been described in detail by way of examples, those skilled in the art should understand that the above examples are only for illustration and not for limiting the scope of the present disclosure. Those skilled in the art should understand that the above embodiments can be modified or some technical features can be equivalently replaced without departing from the scope and spirit of the present disclosure. The scope of the present disclosure is defined by the appended claims.

Claims

1. A light-emitting device, comprising: A light-emitting unit located on one side of a backplane; And A packaging layer located on the side of the light-emitting unit away from the backplane, comprising: A first inorganic layer, A second inorganic layer located on the side of the first inorganic layer away from the backplane, An organic layer located between the first inorganic layer and the second inorganic layer, and A third inorganic layer located between the first inorganic layer and the organic layer, the third inorganic layer comprising at least one layer, Wherein the refractive index of the first inorganic layer, the refractive index of the third inorganic layer, and the refractive index of the organic layer decrease in sequence, The thickness d of each layer in the at least one layer = (2K + 1)*λ / 4, where K is an integer and λ is the wavelength of the light emitted by the light-emitting unit, The ratio range of the thickness of each layer in the at least one layer to the thickness of the first inorganic layer is from 1:8 to 1:

12.

2. The light-emitting device according to claim 1, wherein, The refractive index of each layer of the at least one layer is n1, and the refractive indices of the two layers adjacent to each layer of the at least one layer in the first inorganic layer, the at least one layer, and the organic layer are n2 and n3, (n1) 2 The absolute value of the difference between (n2 × n3) is greater than or equal to 0 and less than 0.1, Wherein the at least one layer comprises one layer.

3. The light-emitting device according to claim 1, wherein, The refractive index of each layer in the at least one layer is n1, and the refractive indices of the two layers adjacent to each layer in the at least one layer in the first inorganic layer, the at least one layer, and the organic layer are n2 and n3, (n1) 2 The absolute value of the difference between (n2×n3) is greater than or equal to 0 and less than 0.1, and the absolute value of the difference between the refractive indices of two adjacent layers in the first inorganic layer, the at least one layer, and the organic layer ranges from 0.01 to 0.

1.

4. The light-emitting device according to claim 3, wherein, The refractive index range of each layer in the at least one layer is from 1.45 to 1.

76.

5. The light-emitting device according to claim 4, wherein, The at least one layer comprises: A first layer, the refractive index range of the first layer is from 1.57 to 1.76; and A second layer located between the first layer and the organic layer, the refractive index range of the second layer is from 1.45 to 1.

55.

6. The light-emitting device according to claim 4, wherein: The refractive index range of the first inorganic layer is from 1.7 to 2; and The refractive index range of the organic layer is from 1.45 to 1.

55.

7. The light-emitting device according to claim 1, wherein, The thickness range of each layer in the at least one layer is from 20 nanometers to 200 nanometers.

8. The light-emitting device according to claim 7, wherein, The at least one layer comprises: A first layer, the thickness range of the first layer is from 50 nanometers to 200 nanometers; and A second layer located between the first layer and the organic layer.

9. The light-emitting device according to claim 7, wherein: The thickness range of the first inorganic layer is from 500 nanometers to 1500 nanometers; and The thickness range of the organic layer is from 4 micrometers to 16 micrometers.

10. The light-emitting device according to claim 1, wherein, The material of the third inorganic layer comprises silicon oxynitride.

11. The light-emitting device according to claim 10, wherein, The material of the first inorganic layer comprises silicon oxynitride.

12. The light-emitting device according to any one of claims 1-11, wherein, The light-emitting unit comprises a microcavity structure, and the microcavity structure comprises: An anode located on the said side of the backplane; A light-emitting layer located on the side of the anode away from the backplane; A cathode located on the side of the light-emitting layer away from the anode; and A light extraction layer located on the side of the cathode away from the light-emitting layer, and the refractive index of the light extraction layer is less than the refractive index of the organic layer.

13. The light-emitting device according to any one of claims 1-11, wherein, The surface of the third inorganic layer in contact with the organic layer has protrusions.

14. The light-emitting device according to claim 13, wherein, The arithmetic mean deviation of the surface profile is greater than 10 nanometers.

15. A display device, comprising: The backplane; A plurality of pixel units located on the said side of the backplane, and at least one pixel unit in the plurality of pixel units comprises the light-emitting device according to any one of claims 1-14.

16. A manufacturing method of a light-emitting device, comprising: Forming a light-emitting unit on one side of a backplane; And Forming a packaging layer on the side of the light-emitting unit away from the backplane, comprising: Forming a first inorganic layer, Forming a third inorganic layer on the side of the first inorganic layer away from the backplane, the third inorganic layer comprising at least one layer, An organic layer is formed on a side of the third inorganic layer away from the first inorganic layer, and a second inorganic layer is formed on a side of the organic layer away from the third inorganic layer, wherein the refractive index of the first inorganic layer, the refractive index of the third inorganic layer, and the refractive index of the organic layer decrease in sequence, the thickness d of each layer in the at least one layer is (2K + 1)*λ / 4, where K is an integer and λ is the wavelength of light emitted by the light-emitting unit, the ratio range of the thickness of each layer in the at least one layer to the thickness of the first inorganic layer is from 1:8 to 1:

12.

17. The method according to claim 16, wherein, Forming the third inorganic layer includes: forming the third inorganic layer by a chemical vapor deposition process, and the power applied during the formation of the third inorganic layer changes from a non-zero value to 0 at a certain moment, so that the surface of the third inorganic layer in contact with the organic layer has protrusions.

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