electronic devices

Abstract

The present invention provides an electronic device. An electronic device (10) comprises: a semiconductor device (100) comprising a semiconductor element (101), a conductive component (102, 103) electrically connected to the semiconductor element, and a resin mold (105) sealing the semiconductor element; a wiring substrate (110) comprising a wiring portion (112) provided with the semiconductor device and a resist portion (113) provided around the wiring portion; a heat dissipation component (130) in contact with at least one surface of the semiconductor device; and a housing (140) in contact with the semiconductor device via the heat dissipation component, wherein the thermal conductivity of the resin mold and the heat dissipation component is higher than the thermal conductivity of the resist portion.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application is based on Japanese application No. 2019-176914 filed on September 27, 2019, the contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure relates to an electronic device including a semiconductor device, a wiring substrate, and a housing. In the semiconductor device, a semiconductor element is sealed by a resin mold. Background Art

[0004] As disclosed in Patent Document 1, an electronic device comprising a semiconductor device, a wiring substrate, and a housing is known, wherein the semiconductor element is sealed by a resin mold. In the electronic device disclosed in Patent Document 1, the semiconductor device disposed on the wiring substrate is covered with a heat-conductive member, and the housing is in contact with the upper surface (the surface facing the wiring substrate) of the heat-dissipating member.

[0005] Patent Document 1: Japanese Patent No. 6201966

[0006] In Patent Document 1, heat generated in the semiconductor element is dissipated toward the housing or the wiring substrate. On the housing side, heat is dissipated via the resin mold covering the semiconductor element and the heat dissipation component. However, the amount of heat dissipated toward the housing is insufficient, and sufficient heat dissipation toward the wiring substrate is necessary. Summary of the Invention

[0007] In view of the above, an object of the present disclosure is to provide an electronic device with high heat dissipation performance in which the amount of heat dissipated to the housing is increased.

[0008] The first electronic device involved in the present disclosure comprises: a semiconductor device, comprising a semiconductor element and a resin mold for sealing the above-mentioned semiconductor element; a wiring substrate, comprising a wiring portion provided with the above-mentioned semiconductor device and an anti-etching portion provided around the above-mentioned wiring portion; a heat dissipation component, contacting at least one surface of the above-mentioned semiconductor device; and a housing, contacting the above-mentioned semiconductor device via the above-mentioned heat dissipation component, and the thermal conductivity of the above-mentioned resin mold and the above-mentioned heat dissipation component is higher than the thermal conductivity of the above-mentioned anti-etching portion.

[0009] According to the first electronic device of the present disclosure, since the thermal conductivity of the resin mold and the heat dissipation component is higher than that of the resist portion, the thermal conductivity of the heat dissipation path from the semiconductor element via the resin mold and the heat dissipation component to the housing is higher than the thermal conductivity of the heat dissipation path from the semiconductor element via the resist portion to the wiring substrate. Consequently, it is possible to provide an electronic device with high heat dissipation performance, increasing the amount of heat dissipated toward the housing.

[0010] The second electronic device involved in the present disclosure comprises: a semiconductor device, comprising a semiconductor element, a conductive component electrically connected to the semiconductor element, and a resin mold that seals the above-mentioned semiconductor element; a wiring substrate, comprising a base material portion, a through portion penetrating the above-mentioned base material portion, a wiring portion arranged on the upper surface of the above-mentioned through portion and provided with the above-mentioned semiconductor device, and an anti-etching portion arranged around the above-mentioned wiring portion; a heat dissipation component, which is in contact with the above-mentioned wiring substrate on the side of the above-mentioned through portion opposite to the above-mentioned wiring portion; and a housing, which is in contact with the above-mentioned semiconductor device via the above-mentioned heat dissipation component, and the thermal conductivity of the above-mentioned through portion and the above-mentioned heat dissipation component is higher than the thermal conductivity of the above-mentioned anti-etching portion.

[0011] According to the second electronic device of the present disclosure, since the through-hole portion and the heat dissipation component have higher thermal conductivity than the resist portion, the thermal conductivity of the heat dissipation path from the semiconductor element via the through-hole portion and the heat dissipation component to the housing is higher than the thermal conductivity of the heat dissipation path from the semiconductor element via the resist portion to the base material portion. Consequently, it is possible to provide an electronic device with improved heat dissipation properties, thereby increasing the amount of heat dissipated toward the housing. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The above-mentioned objects and other objects, features and advantages of the present disclosure will become more apparent from the following detailed description with reference to the accompanying drawings.

[0013] Figure 1 This is a plan view of the electronic device according to the first embodiment.

[0014] Figure 2 yes Figure 1 Sectional view along line II-II.

[0015] Figure 3 It is a cross-sectional view of an electronic device according to a second embodiment.

[0016] Figure 4 It is a cross-sectional view of an electronic device according to a third embodiment.

[0017] Figure 5 It is a cross-sectional view of an electronic device according to a fourth embodiment.

[0018] Figure 6 It is a cross-sectional view of an electronic device according to a modification.

[0019] Figure 7 It is a cross-sectional view of an electronic device according to a modification.

[0020] Figure 8 It is a cross-sectional view of an electronic device according to a fifth embodiment.

[0021] Figure 9It is a cross-sectional view of an electronic device according to a modification.

[0022] Figure 10 It is a cross-sectional view of an electronic device according to a modification. DETAILED DESCRIPTION

[0023] (First embodiment)

[0024] like Figure 1 and Figure 2 As shown in FIG. 1 , the electronic device 10 according to the first embodiment includes a semiconductor device 100, a wiring substrate 110, a heat dissipation member 130, and a housing 140. Figure 1 、 Figure 2 The x-axis and y-axis directions shown are lateral (lateral) directions of the electronic device 10 and the various structures included therein, such as the semiconductor device 100. The xy plane direction is the plane direction of the electronic device 10 and the various structures included therein, such as the semiconductor device 100. The z-axis direction is the vertical direction perpendicular to the plane direction.

[0025] The semiconductor device 100 includes a semiconductor element 101 , a first conductive member 102 in contact with the upper surface of the semiconductor element 101 , a second conductive member 103 in contact with the lower surface of the semiconductor element 101 , a connecting member 104 , and a resin mold 105 sealing the semiconductor element 101 .

[0026] like Figure 1 As shown, semiconductor device 100 has an appearance in which four external terminals protrude in opposing directions from a resin mold 105 having a substantially rectangular shape when viewed from above. A vertical trench-gate power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is formed in semiconductor element 101.

[0027] The first conductive component 102 on the upper surface side of the semiconductor element 101 is electrically connected to the source electrode and external terminal of the semiconductor element 101. The second conductive component 103 on the lower surface side is electrically connected to the drain electrode of the semiconductor element 101 and is electrically connected to the wiring substrate 110 via the connecting component 104. The first conductive component 102 is a clip connected to the external terminal, but in addition to the clip, it can also be connected to the external terminal using wire bonding, wire tape, etc. In addition, the material of the semiconductor substrate is not particularly limited, but examples thereof include silicon (Si), silicon carbide (SiC), gallium nitride (GaN), etc.

[0028] Wiring substrate 110 includes a base material portion 111, a wiring portion 112 on which semiconductor device 100 is provided, and a resist portion 113 provided around wiring portion 112. Wiring portion 112 and resist portion 113 are provided on the upper surface of base material portion 111, forming a wiring pattern. Connecting member 104 is provided in contact with the upper surface of conductive wiring portion 112, and second conductive member 103 is provided on the surface of connecting member 104. Connecting member 104 is made of, for example, solder, and semiconductor device 100 is fixed to the upper surface of wiring portion 112 via connecting member 104. Resist portion 113 is made of, for example, a resist resin material such as epoxy resin.

[0029] The heat sink 130 is a gel-like insulating material interposed between the wiring substrate 110, the semiconductor device 100 disposed thereon, and the housing 140. The heat sink 130 contacts the top surface 100a of the semiconductor device 100 at its planar portion 134 and contacts the side surface 100b of the semiconductor device 100 at its side surface portion 133. The lower end of the side surface portion 133 reaches the top surface of the wiring substrate 110. The heat sink 130 is taller than the height of the semiconductor device 100 and covers the top surface 100a, the entire side surface, and a portion of the bottom surface of the semiconductor device 100. It also covers the side surface of the connecting member 104 and a portion of the top surface of the wiring substrate 110. The height of the semiconductor device 100 refers to the distance between the top surface 100a and the bottom surface 100c opposite the top surface 100a, or the height of the top surface 100a relative to the bottom surface. The height of the heat dissipation member 130 is the distance between the upper surface 131 of the planar portion 134 and the lower end surface of the side surface portion 133 , that is, the height of the upper surface 131 relative to the lower end surface of the side surface portion 133 .

[0030] The housing 140 is in contact with the semiconductor device 100 via the heat dissipation component 130. The housing 140 is formed of a metal such as aluminum. The housing 140 includes a planar portion 141 and a side portion 142. The side portion 142 protrudes downward (toward the wiring substrate side) from the planar portion 141, and the height of the side portion 142 is higher than the height of the upper surface 100a of the semiconductor device 100 relative to the lower surface. The planar portion 141 is provided at a position opposite to the upper surface 100a of the semiconductor device 100. The side portion 142 is provided at a position opposite to the side 100b that is not parallel to the upper surface 100a and the lower surface of the semiconductor device 100. The planar portion 141 is in contact with the upper surface 131 of the planar portion 134 of the heat dissipation component 130, and the side portion 142 is in contact with the outer side surface ( Figure 2Side surface portion 133 extends to the lower surface side of side surface portion 142, and side surface portion 142 contacts the upper surface of wiring substrate 110 (more specifically, the upper surface of resist portion 113) via side surface portion 133.

[0031] The resin pattern 105 is made of a high-heat-dissipation resin material, such as epoxy resin, mixed with fillers to improve heat dissipation. The heat dissipation component 130 is made of a gel-like high-heat-dissipation material, such as a resin material or silicon material, mixed with fillers to improve heat dissipation. Fillers used in the high-heat-dissipation resin material and the gel-like high-heat-dissipation material are, for example, composite oxide materials with high thermal conductivity, such as alumina. The thermal conductivity of the resin pattern 105 and the heat dissipation component 130 can be adjusted by adjusting the type and filling ratio of the filler. The high-heat-dissipation resin material and the gel-like high-heat-dissipation material are selected so that the thermal conductivity of the resin pattern 105 and the heat dissipation component 130 is higher than that of the resist 113. If the thermal conductivity of the resin pattern 105 is km, the thermal conductivity of the heat dissipation component 130 is kg, and the thermal conductivity of the resist 113 is kr, then in this embodiment, kr ≤ 1 W / (m·K), km > 1 W / (m·K), and kg ≥ 3 W / (m·K). Furthermore, the thermal conductivity of the aluminum housing 140 is approximately 100 to 300 W / (m·K), which is significantly higher than km, kg, and kr.

[0032] As described above, according to the electronic device 10 of the first embodiment, kr ≤ 1 W / (m·K), km > 1 W / (m·K), and kg ≥ 3 W / (m·K), and the thermal conductivity of the resin pattern 105 and the heat sink 130 is higher than the thermal conductivity of the resist 113. Therefore, the thermal conductivity of the heat dissipation path from the semiconductor element 101 through the resin pattern 105 and the heat sink 130 to the housing 140 is higher than the thermal conductivity of the heat dissipation path from the semiconductor element 101 through the resist 113 to the wiring substrate 110. Consequently, it is possible to provide an electronic device 10 with high heat dissipation properties, increasing the amount of heat dissipated toward the housing 140.

[0033] In addition, in the first embodiment, the case where kr≤1W / (m·K), km>1W / (m·K), and kg≥3W / (m·K) is illustrated for explanation, but the present invention is not limited to this. For example, kr≤1W / (m·K), km≥3W / (m·K) and kg>1W / (m·K) may also be satisfied. Alternatively, kr≤1W / (m·K), km≥3W / (m·K) and kg≥3W / (m·K) may also be satisfied. In addition, kr≤1W / (m·K), km>1W / (m·K) and kg>1W / (m·K) may also be satisfied. In order to increase the amount of heat dissipated toward the casing and obtain an electronic device with higher heat dissipation, km>kr and kg>kr are sufficient, and preferably at least one of km and kg is at least 3 times that of kr. That is, it is preferred that one or both of km≥3kr and kg≥3kr are satisfied.

[0034] Furthermore, the housing 140 is in contact with the semiconductor device 100 via the heat dissipation member 130. More specifically, the housing 140 is in contact with the upper surface 100a of the semiconductor device 100 via the flat surface 134 of the heat dissipation member 130 at a flat surface portion 141 that faces the upper surface 100a of the semiconductor device 100. Therefore, heat is efficiently dissipated from the upper surface 100a of the semiconductor device 100 to the flat surface portion 141 of the housing 140 via the flat surface portion 134 of the heat dissipation member 130, which has a higher thermal conductivity than the resist portion 113.

[0035] Furthermore, housing 140 contacts side surface 100b of semiconductor device 100 via side surface 133 of heat dissipation member 130 at side surface 142 facing side surface 100b of semiconductor device 100. Consequently, heat is efficiently dissipated from side surface 100b of semiconductor device 100 to side surface 142 of housing 140 via side surface 133 of heat dissipation member 130, which has a higher thermal conductivity than resist portion 113. Since a heat dissipation path is provided through side surface 142 and side surface 133 in addition to the heat dissipation path through flat surface 141 and flat surface 134, the amount of heat dissipated toward housing 140 can be further increased.

[0036] Furthermore, the side surface portion 142 can restrict the position of the heat dissipating member 130 in the lateral direction (more specifically, the x direction), thereby suppressing lateral positional deviation of the heat dissipating member 130 .

[0037] Furthermore, the side surface 133 of the heat dissipation member 130 is also provided between the side surface 142 of the housing 140 and the wiring substrate 110. Therefore, even in the region of the semiconductor device 100 close to the wiring substrate 110, the thermal conductivity along the heat dissipation path toward the housing 140 can be improved, thereby contributing to improved heat dissipation of the electronic device 10.

[0038] (Second embodiment)

[0039] In each of the following embodiments, matters different from the previously described embodiments are described. Figure 3 As shown, the electronic device 20 according to the second embodiment includes a semiconductor device 200, a wiring substrate 110, a heat dissipation member 230, and a housing 240. Since the semiconductor element 101, the first conductive member 102, the second conductive member 103, and the connecting member 104 in the wiring substrate 110 and the semiconductor device 200 are the same as those in the first embodiment, their description will be omitted. The materials used for these components are the same as those in the first embodiment.

[0040] The semiconductor device 200 includes a resin mold 205 instead of the resin mold 105. A recess 206 is formed in a portion of the upper surface of the resin mold 205. Alternatively, the recess 206 may be formed by laser printing or the like.

[0041] The heat dissipating member 230 includes side surfaces 233 and 235 and an embedding portion 236 . The heat dissipating member 230 is not provided at any position on the upper surface of the semiconductor device 200 other than the recess 206 . The embedding portion 236 is embedded in the recess 206 of the resin mold 205 .

[0042] The housing 240 includes a planar portion 241 and side portions 242 and 243. The side portions 242 and 243 face each other in the x-axis direction and extend to sandwich the semiconductor device 200 and the heat sink 230 in the positive and negative directions of the x-axis. The outer side surface 232 of the heat sink 230 contacts the side portion 242. The outer side surface of the heat sink 230 on the side of the side portion 243 also contacts the side portion 243.

[0043] The flat surface 241 of the housing 240 contacts the upper surface of the semiconductor device 200, that is, the upper surface of the resin mold 205. The flat surface 241 contacts the upper end surfaces of the side surfaces 233 and 235 and the upper surface of the embedded portion 236. The side surfaces 233 and 235 extend to the lower surfaces of the side surfaces 242 and 243, respectively. The side surfaces 242 and 243 of the housing 240 contact the side surfaces of the semiconductor device 200 and a portion of the wiring substrate 110 via the side surfaces 233 and 235 of the heat dissipation member 230, respectively.

[0044] As described above, according to the second embodiment, since the flat surface portion 241 of the housing 240 is in direct contact with a portion of the upper surface of the resin mold 205 , heat dissipation from the upper surface of the semiconductor device 200 to the flat surface portion 241 of the housing 240 can be further promoted via the resin mold 205 .

[0045] Furthermore, the housing 240 includes side surfaces 242 and 243 that oppose each other in the x-axis direction, and the heat sink 230 includes side surfaces 233 and 235 that oppose each other in the x-axis direction. In addition to the heat dissipation path from the negative x-axis side of the semiconductor device 200 via the side surface 233 of the heat sink 230 to the side surface 242 of the housing 240, heat is also dissipated from the semiconductor device 200 via the side surface 235 of the heat sink 230 to the side surface 243 of the housing 240. Consequently, the amount of heat dissipated toward the housing 240 can be further increased. Furthermore, the x-axis opposing side surfaces 242 and 243 more appropriately constrain the position of the heat sink 230, thereby suppressing positional deviation. In addition, in addition to the side portions 242 and 243 that are opposite to each other in the x-axis direction, the side portions of the housing may also include one or two side portions in the y-axis direction, or may be configured as a series of side portions that surround the outer side surfaces of the semiconductor device 200 and the heat dissipation component 230.

[0046] Furthermore, in the electronic device 20 according to the second embodiment, as in the first embodiment, the thermal conductivity of the resin pattern 205 and the heat dissipation member 230 is higher than the thermal conductivity of the resist portion 113. Therefore, the thermal conductivity of the heat dissipation path from the semiconductor element 101 via the resin pattern 205 and the heat dissipation member 230 to the housing 240 can be made higher than the thermal conductivity of the heat dissipation path from the semiconductor element 101 via the resist portion 113 to the wiring substrate. Consequently, it is possible to provide an electronic device 20 with high heat dissipation properties, with an increased amount of heat dissipated toward the housing 240.

[0047] (Third embodiment)

[0048] like Figure 4 As shown, the electronic device 30 according to the third embodiment includes a semiconductor device 300, a wiring substrate 110, a heat dissipation member 330, and a housing 340. Since the semiconductor element 101, the first conductive member 102, the second conductive member 103, and the connecting member 104 in the wiring substrate 110 and the semiconductor device 300 are the same as those in the first embodiment, their description will be omitted. The materials used for these components are the same as those in the first embodiment.

[0049] The semiconductor device 300 includes a resin pattern 305 instead of the resin pattern 105 . A recess 306 is formed in a portion of the upper surface of the resin pattern 305 , reaching the upper surface of the first conductive member 102 . A portion of the upper surface of the first conductive member 102 is exposed from the resin pattern 305 .

[0050] The heat sink 330 includes a planar portion 334, side portions 333 and 335, and an embedded portion 336. The planar portion 334 has the same thickness as the planar portion 134 according to the first embodiment. An embedded portion 336 protrudes downward from a portion of the lower surface of the planar portion 334. The embedded portion 336 is embedded in the recess 306 of the resin mold 305 and contacts the upper surface of the first conductive member 102 of the semiconductor device 300. Since the structure of the side portions 333 and 335 is the same as that of the side portions 233 and 235 according to the second embodiment, their description will be omitted.

[0051] The housing 340 includes a planar portion 341 and side portions 342 and 343. Since the structure of the housing 340 is the same as that of the housing 240 according to the second embodiment, a description thereof will be omitted. The upper surface 331 of the heat dissipation component 330 contacts the planar portion 341 of the housing 340, and the outer side surface 332 contacts the side portion 342. The outer side surface of the side portion 343 also contacts the side portion 343. The planar portion 341 of the housing 340 contacts the upper surface of the semiconductor device 300 via the planar portion 334 of the heat dissipation component 330. The side portions 342 and 343 of the housing 340 contact the side surfaces of the semiconductor device 300 and a portion of the wiring substrate 110 via the side portions 333 and 335 of the heat dissipation component 330, respectively.

[0052] As described above, according to the third embodiment, the first conductive member 102 of the semiconductor device 300 is exposed from the resin mold 305. Furthermore, the embedded portion 336 of the heat sink 230 is in contact with the upper surface of the first conductive member 102 of the semiconductor device 300. Because the first conductive member 102 is made of a metallic electrode material and has a higher thermal conductivity than the resin mold 305, heat can be efficiently dissipated from the semiconductor device 300 to the heat sink 330 via the first conductive member 102, thereby increasing the amount of heat dissipated to the housing 340.

[0053] Furthermore, according to the electronic device 30 of the third embodiment, similarly to the first embodiment, the thermal conductivity of the resin pattern 305 and the heat dissipation member 330 is higher than that of the resist portion 113. Therefore, the thermal conductivity of the heat dissipation path from the semiconductor element 101 via the resin pattern 305 and the heat dissipation member 330 to the housing 340 can be made higher than the thermal conductivity of the heat dissipation path from the semiconductor element 101 via the resist portion 113 to the wiring substrate. Consequently, it is possible to provide an electronic device 30 with high heat dissipation properties, with an increased amount of heat dissipated toward the housing 340.

[0054] Furthermore, according to the electronic device 30 according to the third embodiment, similar to the second embodiment, the housing 340 includes side surfaces 342 and 343, and the heat sink 330 includes side surfaces 333 and 335. Since the semiconductor device 300 dissipates heat in both the positive and negative directions of the x-axis, the amount of heat dissipated toward the housing 340 can be further increased. Furthermore, the position of the heat sink 330 can be more appropriately restricted in both the positive and negative directions of the x-axis, thereby limiting positional deviation.

[0055] (Fourth embodiment)

[0056] like Figure 5 As shown, the electronic device 40 according to the fourth embodiment includes a semiconductor device 400, a wiring substrate 110, a heat dissipation member 430, and a housing 440. Since the semiconductor element 101, the first conductive member 102, the second conductive member 103, and the connecting member 104 in the wiring substrate 110 and the semiconductor device 400 are the same as those in the first embodiment, their description will be omitted. The materials used for these components are the same as those in the first embodiment.

[0057] The semiconductor device 400 includes a resin mold 405 in place of the resin mold 105. A recess 406 is formed in a portion of the upper surface of the resin mold 405. The first conductive member 102 of the semiconductor device 400 passes through the recess 406 of the resin mold 405 and protrudes from the upper surface of the resin mold 405. In the semiconductor device 400, the upper surface of the resin mold 405 is located higher than the upper surface of the first conductive member 102.

[0058] The heat sink 430 includes a planar portion 434, side portions 433 and 435, and a recessed portion 436. The planar portion 434 has the same thickness as the planar portion 134 of the first embodiment. A recessed portion 436 is formed in a portion of the lower surface of the planar portion 434, which is recessed upward and thinner. The upper portion of the first conductive member 102 of the semiconductor device 400 is embedded in and in contact with the recessed portion 436.

[0059] Housing 440 includes a planar portion 441 and side portions 442 and 443. Side portions 442 and 443 oppose each other in the x-axis direction and extend to sandwich semiconductor device 400 and heat sink 430 in the positive and negative x-axis directions. The lower end surfaces of side portions 442 and 443 extend to contact the upper surface of wiring substrate 110. Side portions 433 and 435 of heat sink 430 do not extend below the lower surface of side portions 442 and 443 of housing 440.

[0060] The top surface 431 of the heat sink 430 contacts the flat surface 441 of the housing 440, and the outer surface 432 contacts the side surface 442. The outer surface of the side surface 443 also contacts the side surface 443. The flat surface 441 of the housing 440 contacts the top surface of the semiconductor device 400 via the flat surface 434 of the heat sink 430. The side surfaces 442 and 443 of the housing 440 contact the side surfaces of the semiconductor device 400 via the side surfaces 433 and 435 of the heat sink 430, respectively, and directly contact a portion of the wiring substrate 110.

[0061] As described above, according to the fourth embodiment, the first conductive member 102 of the semiconductor device 400 protrudes from the resin mold 405. Furthermore, the flat surface 441 of the housing 440 contacts the upper surface of the first conductive member 102 of the semiconductor device 400 via the recess 436 of the relatively thin heat sink 430. Because the first conductive member 102 is made of a metallic electrode material and has a higher thermal conductivity than the resin mold 405, heat can be efficiently dissipated from the semiconductor device 400 to the heat sink 430 via the first conductive member 102. Furthermore, the relatively thin recess 436 shortens the heat dissipation path from the upper surface of the semiconductor device 400 to the flat surface 441 of the housing 440, further promoting heat dissipation to the housing 440.

[0062] In the semiconductor device 400 , the upper surface of the first conductive member 102 is preferably insulated by an insulating plating layer, etc. By insulating the upper surface of the first conductive member 102 , the recess 436 of the heat dissipation member 430 can be made thinner.

[0063] Furthermore, the height of the side surfaces 442 and 443 protruding from the planar portion 441 of the housing 440 (more specifically, the height from the lower surface of the planar portion 441 to the lower end surfaces of the side surfaces 442 and 443) is higher than the height of the upper surface relative to the lower surface of the semiconductor device 400. Furthermore, the housing 440 is configured to directly contact the wiring substrate 110. Therefore, it is possible to provide an electronic device 40 with high heat dissipation properties, where heat dissipated toward the resist portion 113 can also be dissipated toward the housing 440, further increasing the amount of heat dissipated toward the housing 440.

[0064] (Variation)

[0065] In each of the above embodiments, an electronic device having only one semiconductor device is described as an example, but the present invention is not limited thereto. The number of semiconductor devices in an electronic device may be as follows: Figure 6 The number of semiconductor elements included in a semiconductor device integrated by a resin mold can be as follows: Figure 7 Two are shown, but there may be three or more.

[0066] exist Figure 6 In the illustrated electronic device 50, two semiconductor devices 100 having the same structure are arranged side by side in the x-direction on a wiring substrate 510. The wiring substrate 510 is provided with two wiring portions 512, each of which is provided with the two semiconductor devices 100, and a resist portion 513 is provided around the wiring portions 512.

[0067] Heat sink 530 includes a planar portion 534, side portions 533 and 535, and a middle portion 537. Planar portion 534 extends across the upper surfaces of two semiconductor devices 100. Side portions 533 and 535 and middle portion 537 extend downward from planar portion 534 to the surface of wiring substrate 510 and contact the surface of wiring substrate 510. Middle portion 537 fills the space between two semiconductor devices 100.

[0068] The housing 540 includes a planar portion 541 and side portions 542 and 543. The side portions 542 and 543 face each other in the x-axis direction and extend to sandwich the two semiconductor devices 100 and the heat dissipation member 530 in the positive and negative directions of the x-axis.

[0069] The top surface 531 of the heat sink 530 contacts the planar portion 541 of the housing 540. The outer side surface 532 contacts the side surface 542. The outer side surface of the heat sink 530 on the side surface 543 side also contacts the side surface 543. The planar portion 541 of the housing 540 contacts the top surfaces of the two semiconductor devices 100 via the planar portion 534 of the heat sink 530. The side surfaces 533 and 535 extend to the bottom surfaces of the side surfaces 542 and 543, respectively. The side surface 542 of the housing 540 contacts the left side surface of the semiconductor device 100 on the left side (negative x-axis) in the figure and a portion of the wiring substrate 110 via the side surface 533 of the heat sink 530. The side surface 543 of the housing 540 contacts the right side surface of the semiconductor device 100 on the right side (positive x-axis) in the figure and a portion of the wiring substrate 110 via the side surface 535 of the heat sink 530. The intermediate portion 537 is in contact with the right side surface of the semiconductor device 100 arranged on the left side of the figure and the left side surface of the semiconductor device 100 arranged on the right side.

[0070] Figure 7 The electronic device 60 is shown with Figure 6The difference between the electronic device 50 shown is that: on the wiring substrate 610, there is a semiconductor device 600 that is integrated by a resin mold 605 and includes a semiconductor element 101, a first conductive component 102, a second conductive component 103, and a connecting component 104 with the same structure as in the semiconductor device 100 as a group, and two such groups are arranged in the x direction.

[0071] The heat dissipation component 630 includes a planar portion 634 and side portions 633 and 635. The planar portion 534 is provided over the upper surfaces of the two semiconductor devices 100. Figure 6 The electronic device 50 shown is equivalent, so by Figure 6 The reference number of the 500 segment is replaced by the 600 segment and the description is omitted.

[0072] (Fifth embodiment)

[0073] In the above-mentioned embodiments, the case where the housing is provided at a position facing the semiconductor device and the wiring substrate is described as an example. However, Figure 8 As shown in FIG, the housing may be provided at the same side of the semiconductor device and the wiring substrate. For example, the housing may be provided at a position facing the semiconductor device with respect to the wiring substrate.

[0074] An electronic device 70 according to the fifth embodiment includes a semiconductor device 100, a wiring substrate 710, a heat sink 750, and a housing 740. Since the semiconductor device 100 is the same as that of the first embodiment, its description is omitted. The materials of each component are the same as those of the first embodiment.

[0075] The wiring substrate 710 includes a base material portion 711, a wiring portion 712, a resist portion 713, and a through portion 714. The through portion 714 extends vertically through the base material portion 711. The wiring portion 712 is provided at a position corresponding to the upper surface of the through portion 714 and in contact with the through portion 714. A material having a higher thermal conductivity than that of the base material portion 711 and the resist portion 713 can be suitably used as the material for the through portion 714. In this embodiment, the through portion 714 is made of a material having the same electrical conductivity as the wiring portion 712 (e.g., a metal material or a composite metal material containing copper or aluminum).

[0076] The heat dissipation component 750 contacts the lower surface of the wiring substrate 710. The heat dissipation component 750 is positioned so as to contact at least the lower surface of the through-portion 714. That is, the heat dissipation component 750 contacts the wiring substrate 710 on the side facing the semiconductor device 100 and the wiring portion 712. As in the first embodiment, the heat dissipation component 750 is made of an insulating, gel-like, high-heat dissipation material mixed with fillers, etc., to improve heat dissipation. If the thermal conductivity of the resin mold 105 is km, the thermal conductivity of the heat dissipation component 750 is kg, and the thermal conductivity of the resist portion 713 is kr, then in this embodiment, kr ≤ 1 W / (m·K). Meanwhile, km > 1 W / (m·K), and kg ≥ 3 W / (m·K). Furthermore, the thermal conductivity of the through-portion 714 and the wiring portion 712 is approximately 100 to 400 W / (m·K), significantly higher than kr and kg.

[0077] Housing 740 is positioned so as to contact the lower surface of heat sink 750. Housing 740 is a flat plate that is substantially parallel to the lower surface of semiconductor device 100 and the lower surface of wiring substrate 710. Housing 740 contacts the lower surface of semiconductor device 100 via heat sink 750, through-hole 714, and wiring 712. Furthermore, the thermal conductivity of aluminum housing 140 is 100 to 300 W / (m·K), significantly higher than that of kg and kr.

[0078] As described above, according to the electronic device 70 of the fifth embodiment, heat is dissipated from the semiconductor device 100 to the housing 740 side via the wiring portion 712, the through portion 714, and the heat sink 750, which are sequentially arranged below the semiconductor device 100 (in the negative z-axis direction). This heat dissipation path dissipates heat to the housing 740 via the wiring portion 712 and the through portion 714, which have thermal conductivity comparable to that of the housing 740, and the heat sink 750, which has a higher thermal conductivity than the resist portion 713. This improves the thermal conductivity compared to a heat dissipation path from the semiconductor element 101 to the base material portion 711 of the wiring substrate 710 via the resist portion 713. Consequently, it is possible to provide an electronic device 70 with high heat dissipation properties, increasing the amount of heat dissipated to the housing 740 side. Furthermore, in the electronic device 70, since a high-heat dissipation resin material is used for the resin mold 105, similar to the first embodiment, heat dissipation from the semiconductor device 100 via the resin mold 105 is also facilitated.

[0079] (Variation)

[0080] like Figure 9As shown in the electronic device 80, the through portion 814 can also be enlarged relative to the wiring portion 812. By enlarging the through portion 814 in the plane direction (x direction or y direction), the heat conduction area of ​​the heat dissipation path is increased, so that heat can be dissipated more efficiently. Figure 8 The electronic device 70 shown is equivalent, so by Figure 8 The reference numbers of the 700 segment are replaced with the 800 segment to omit the description.

[0081] exist Figure 8 、 Figure 9 In the description, a semiconductor device including only one semiconductor element is used as an example, but the present invention is not limited to this. The number of semiconductor elements included in a semiconductor device integrated by a resin mold can be as follows: Figure 10 Although two are shown, the number may be three or more. In addition, the number of semiconductor devices included in the electronic device may be two or more.

[0082] exist Figure 10 In the electronic device 90 shown, a semiconductor device 900 is provided on a wiring substrate 910, in which a semiconductor element 101, a first conductive component 102, a second conductive component 103, and a connecting component 104 having the same structure as that of the semiconductor device 100 are arranged as a group, two such groups are arranged in the x direction, and are integrated by a resin mold 905. The wiring substrate 910 is provided with two wiring portions 912, each of which is provided with two groups of semiconductor elements, etc., and two through portions 914, each in contact with the lower surface of the two wiring portions 912. An anti-etching portion 913 is provided around the wiring portion 912. Since the other structures of the electronic device 90 are similar to those of the semiconductor device 100, Figure 8 The electronic device 70 shown is equivalent, so by Figure 8 The reference number of the 700 segment is replaced by the 900 segment to omit the description.

[0083] According to each of the above-described embodiments, the following effects can be obtained.

[0084] Each of the first electronic devices 10, 20, 30, 40, 50, and 60 includes a semiconductor device (e.g., semiconductor device 100), a wiring substrate (e.g., wiring substrate 110), a heat dissipation component (e.g., heat dissipation component 130), and a housing (e.g., housing 140). The semiconductor device 100 includes a semiconductor element 101, a conductive component (first conductive component 102) electrically connected to the semiconductor element 101, and a resin mold 105 that seals the semiconductor element 101. The wiring substrate 110 includes a base material portion 111, a wiring portion 112 on which the semiconductor device 100 is provided, and a resist portion 113 provided around the wiring portion 112. The heat dissipation component 130 is in contact with at least one surface of the semiconductor device 100. The housing 140 is in contact with the semiconductor device 100 via the heat dissipation component 130. The thermal conductivity km of the resin mold 105 and the thermal conductivity kg of the heat dissipation component 130 are higher than the thermal conductivity kr of the resist portion 113 (km>kr and kg>kr).

[0085] According to the first electronic device, because the thermal conductivity of resin pattern 105 and heat sink 130 is higher than that of resist 113, the thermal conductivity of the heat dissipation path from semiconductor element 101 via resin pattern 105 and heat sink 130 to housing 140 is higher than the thermal conductivity of the heat dissipation path from semiconductor element 101 via resist 113 to wiring substrate 110. Therefore, an electronic device with high heat dissipation properties can be provided, with an increased amount of heat dissipated to housing 140.

[0086] Like the first electronic device 20, at least a portion of the resin mold 205 may be in contact with the housing 240. By dissipating heat directly from the resin mold 205 to the housing 240, heat dissipation from the semiconductor device 200 is promoted.

[0087] As with first electronic devices 10, 20, 30, 40, 50, and 60, the housing may also include a planar portion disposed opposite the upper or lower surface of the semiconductor device, and a side portion disposed opposite at least one of the side surfaces that are non-parallel to the first surface. The side portions expand the heat dissipation path from the semiconductor device to the housing, further promoting heat dissipation. Furthermore, the side portions can suppress positional deviation of the heat dissipation component.

[0088] As in the first electronic device 40, the height of the side portion protruding from the flat surface of the housing is preferably higher than the height of the upper surface relative to the lower surface of the semiconductor device, and more preferably, the lower end surface of the side portion contacts the wiring substrate. This provides an electronic device with high heat dissipation properties, which can dissipate heat both to the resist portion and to the housing, with the amount of heat dissipated to the housing being further increased.

[0089] As in the first electronic devices 10, 20, 30, 50, and 60, the heat dissipation component may be disposed between the side surface of the housing and the wiring substrate. This improves the thermal conductivity of the heat dissipation path toward the housing even in the region of the semiconductor device close to the wiring substrate, thereby contributing to improved heat dissipation performance of the electronic device.

[0090] As in the first electronic devices 30 and 40, at least a portion of the conductive component may be exposed from the resin mold. Since the conductive component is made of a metal electrode material and has a higher thermal conductivity than the resin mold, heat can be efficiently dissipated from the semiconductor device to the heat dissipation component via the conductive component, thereby increasing the amount of heat dissipated to the housing. Furthermore, it is preferred that the surface of the conductive component exposed from the resin mold is insulated by an insulating coating. The heat dissipation component between the exposed surface of the conductive component and the housing can be made thinner, which can help improve the heat dissipation of the electronic device.

[0091] In addition, like the second electronic device 70, 80, 90, it has: a semiconductor device 100; a wiring substrate 710, 810, 910, including a base material portion 711, 811, 911, a through portion 714, 814, 914 passing through the base material portion, a wiring portion 712, 812, 912 arranged on the upper surface of the through portion and provided with the semiconductor device 100, and an anti-etching portion 713, 813, 913 arranged around the wiring portion; a heat dissipation component 750, 850, 950, which is in contact with the wiring substrate on the side of the through portion opposite to the wiring portion; and a housing 740, 840, 940, which is in contact with the above-mentioned semiconductor device via the heat dissipation component. In this electronic device, the heat dissipation performance of the electronic device can be improved by making the thermal conductivity of the through portion and the heat dissipation component higher than the thermal conductivity of the anti-etching portion. Specifically, the thermal conductivity of the heat dissipation path from the semiconductor element through the through-hole portion and the heat dissipation component to the housing is higher than the thermal conductivity of the heat dissipation path from the semiconductor element through the resist portion to the base portion. Therefore, it is possible to provide an electronic device with high heat dissipation performance, increasing the amount of heat dissipated to the housing.

[0092] While this disclosure has been described with reference to embodiments, it should be understood that the disclosure is not limited to these embodiments or configurations. This disclosure also encompasses various modifications and variations within the scope of their equivalents. Furthermore, various combinations and configurations, including only one element, more than one element, or less than one element, are also encompassed within the scope and spirit of this disclosure.

Claims

1. An electronic device comprising: A semiconductor device comprises a semiconductor element, a first conductive member, a second conductive member, and a resin mold for sealing the semiconductor element, wherein: The first conductive component contacts the upper surface of the semiconductor element and is electrically connected to the semiconductor element, and the second conductive component contacts the lower surface of the semiconductor element and is electrically connected to the semiconductor element; a wiring substrate including a wiring portion provided with the semiconductor device and a resist portion provided around the wiring portion; a heat dissipation component in contact with at least one surface of the semiconductor device; and The housing is in contact with the semiconductor device via the heat dissipation component. The resin mold is in contact with the side surface and at least a portion of the upper surface of the semiconductor element, the side surface and at least a portion of the upper surface of the first conductive component, and the side surface and a portion of the upper surface of the second conductive component. The resin pattern and the heat dissipating member have higher thermal conductivity than the resist portion.

2. The electronic device according to claim 1, wherein At least a portion of the resin mold is in contact with the housing.

3. The electronic device according to claim 1, wherein The housing includes a planar portion disposed at a position facing the upper surface or lower surface of the semiconductor device, and a side portion disposed at a position facing at least one of side surfaces that are not parallel to the upper surface and the lower surface.

4. The electronic device according to claim 3, wherein: A height of the side surface portion protruding from the planar portion of the housing is higher than a height of the upper surface relative to the lower surface of the semiconductor device.

5. The electronic device according to claim 1, wherein The heat dissipation member is provided between a side surface portion of the housing and the wiring substrate.

6. The electronic device according to any one of claims 1 to 5, wherein: At least a portion of the conductive member is exposed from the resin mold.

7. The electronic device according to claim 6, wherein: The surface of the conductive member exposed from the resin mold is insulated by an insulating plating layer.

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