A layout splitting method and device suitable for double photolithography technology and an electronic device

Abstract

The present application relates to the field of integrated circuit mask design, especially to a layout splitting method suitable for double photolithography technology, a layout splitting device suitable for double photolithography technology and an electronic device, the method comprises the following steps: providing an initial layout comprising a plurality of mask patterns; splitting the plurality of mask patterns into conflict patterns and non-conflict patterns based on a first splitting rule; splitting the conflict patterns into first part mask patterns and second part mask patterns based on a second splitting rule; splitting the non-conflict patterns into first size mask patterns and second size mask patterns based on a third splitting rule; merging one part of the first size mask patterns and the second size mask patterns with the first part mask patterns respectively to obtain a first layout, and merging the other part with the second part mask patterns to obtain a second layout, the scheme provided by the present application has the advantages of fast splitting speed and high mask exposure imaging resolution formed by the two layouts after splitting.

Description

[0001] The present application relates to the field of integrated circuit mask design, and in particular to a layout splitting method suitable for double lithography technology, a layout splitting device suitable for double lithography technology and an electronic device.

[0002] With the development of integrated circuit design, the feature size of devices is getting smaller and smaller, and is approaching the theoretical limit of the exposure system. After lithography, the imaging on the surface of the silicon wafer will produce serious distortion, i.e. optical proximity effect. With the higher requirements and challenges of lithography technology, various resolution enhancement technologies such as immersion lithography, off-axis illumination, phase shift mask, etc. are proposed to improve the imaging quality and enhance the resolution.

[0003] The current mainstream 1.35NA 193nm immersion lithography machine can provide 36-40nm half-pitch resolution, which can meet the requirements of 28nm logic technology node. If the size is less than that, double exposure or even multiple exposure technology is needed. There are two main implementation ways of double lithography technology: one is exposure-etching-exposure-etching (Lithography-Etch-Lithography-Etch), LELE. The basic principle of LELE is to split the original one layer of lithography pattern into two or more masks, and use multiple exposure and etching to realize the original one layer of design pattern. The other is self-aligned double patterning (SADP). The principle of SADP is to perform lithography once, then deposit a sidewall around the first lithography pattern, and realize frequency doubling of the space pattern by etching.

[0004] In practical application, LELE process is more widely used because SARP technology has more requirements for layout. However, splitting the layout is not easy. Not only the conflict position in the layout needs to be solved, but also the density of the split layout needs to be kept similar, and there are also time and memory limitations. The current layout splitting method will have these defects.

[0005] In order to overcome the technical problems that it is difficult to solve the conflict problem while ensuring the similar density in the current layout splitting technology, the present application provides a layout splitting method suitable for double lithography technology, a layout splitting device suitable for double lithography technology and an electronic device.​​​

[0006] In order to solve the above technical problems, the present application provides a technical solution: a layout splitting method suitable for double photolithography technology, which is used for splitting an initial layout into a first layout and a second layout, and comprises the following steps: providing an initial layout, wherein the initial layout comprises a plurality of mask patterns; splitting the plurality of mask patterns into conflict patterns and non-conflict patterns based on a preset first splitting rule; splitting the conflict patterns into first partial mask patterns and second partial mask patterns based on a preset second splitting rule, wherein the first partial mask patterns and the second partial mask patterns do not conflict with each other; splitting the non-conflict patterns into first size mask patterns and second size mask patterns of at least two size levels based on a preset third splitting rule, wherein the maximum size of the first size mask patterns is greater than the maximum size of the second size mask patterns; and merging one part of the first size mask patterns and the second size mask patterns with the first partial mask patterns to obtain the first layout, and merging another part of the first size mask patterns and the second size mask patterns with the second partial mask patterns to obtain the second layout.

[0007] Preferably, the step of merging one part of the first size mask patterns and the second size mask patterns with the first partial mask patterns to obtain the first layout, and merging another part of the first size mask patterns and the second size mask patterns with the second partial mask patterns to obtain the second layout comprises the following steps: splitting the first size mask patterns into third partial mask patterns and fourth partial mask patterns based on a preset fourth splitting rule, wherein the fourth splitting rule comprises: setting an edge threshold value between edges of any two adjacent mask patterns, and an angle threshold value between angles of any two adjacent mask patterns, defining one of the two mask patterns smaller than the edge threshold value or the angle threshold value as the third partial mask pattern, and the other as the fourth partial mask pattern, and defining the mask pattern part larger than the edge threshold value or the angle threshold value as the third partial mask pattern, and the other part as the fourth partial mask pattern; merging the first partial mask patterns with the third partial mask patterns to obtain an initial first layout, and merging the second partial mask patterns with the fourth partial mask patterns to obtain an initial second layout; splitting one of any two adjacent mask patterns smaller than the edge threshold value or the angle threshold value on the second size mask patterns to the initial first layout, and the other to the initial second layout, and defining the mask pattern part larger than the edge threshold value or the angle threshold value as the initial first layout, and the other part as the initial second layout.

[0008] Preferably, the preset first splitting rule is as follows: setting an edge threshold value between edges of any two adjacent mask patterns, and an angle threshold value between angles of any two adjacent mask patterns, and defining the mask patterns smaller than the edge threshold value or the angle threshold value as the conflict patterns, and the remaining as the non-conflict patterns.

[0009] Preferably, the preset second splitting rule is as follows: setting an edge threshold between any two adjacent edges of mask patterns and an angle threshold between any two adjacent angles of mask patterns, defining two mask patterns with a smaller edge threshold or a smaller angle threshold as a first part mask pattern and a second part mask pattern.

[0010] Preferably, the preset third splitting rule is as follows: setting an area size threshold or a length size threshold, and classifying mask patterns on the conflict-free pattern exceeding the area size threshold or the length size threshold as first size mask patterns, and the rest as second size mask patterns.

[0011] Preferably, the first layout and the second layout are colored with a first color and a second color respectively.

[0012] Preferably, the first layout and the second layout are colored with a first color and a second color respectively in the following way: first, the first part mask pattern is colored with the first color and the second part mask pattern is colored with the second color before the first layout and the second layout are obtained by merging; then, the third part mask pattern and the fourth part mask pattern are colored with the first color and the second color respectively; finally, the second size mask patterns split to the initial first layout and the initial second layout are colored.

[0013] Preferably, each mask pattern in the conflict pattern is taken as a node with a circle, and a topological relationship diagram is formed by connecting the nodes with straight lines, and the first part mask pattern and the second part mask pattern are colored based on the topological relationship diagram.

[0014] To solve the above technical problems, the application further provides a layout splitting device suitable for double photolithography technology, for splitting an initial layout into a first layout and a second layout, comprising a layout design module: for providing an initial layout, the initial layout comprising a plurality of mask patterns; a first splitting module: for splitting the plurality of mask patterns into conflict patterns and conflict-free patterns based on a preset first splitting rule; a second splitting module: for splitting the conflict patterns into a first part mask pattern and a second part mask pattern based on a preset second splitting rule, the first part mask pattern and the second part mask pattern having no conflict between each other; a third splitting module: for splitting the conflict-free patterns into first size mask patterns and second size mask patterns of at least two size levels based on a preset third splitting rule, the maximum size of the first size mask patterns being larger than the maximum size of the second size mask patterns; and a fourth splitting module: for splitting the first size mask patterns and the second size mask patterns into two parts respectively, one part being merged with the first part mask pattern to obtain the first layout, and the other part being merged with the second part mask pattern to obtain the second layout.

[0015] To solve the above technical problems, the present application also provides an electronic device, comprising one or more processors and a storage device, the storage device being configured to store one or more programs, when the one or more programs are executed by the one or more processors, the one or more processors implement the layout splitting method suitable for double photolithography technology as described above.

[0016] Compared with the prior art, the technical scheme provided by the present application has the following beneficial effects:

[0017] 1、Based on the preset first splitting rule, the plurality of mask patterns are split into conflict patterns and non-conflict patterns, and then the conflict patterns and the non-conflict patterns are further split in parallel based on two different splitting rules. The conflict patterns that have been split are further split based on the preset second splitting rule to solve the conflict problem. Instead of solving the conflict problem one by one for all mask patterns on the initial layout, the splitting speed and the splitting accuracy can be well improved. Then, one of the first size mask patterns and the second size mask patterns obtained by splitting the non-conflict patterns is merged with the first part mask patterns obtained by splitting the conflict patterns to obtain a first layout, and the other is merged with the second part mask patterns to obtain a second layout. The splitting speed can be well improved. The non-conflict patterns are split into mask patterns of two sizes based on a third splitting rule. The non-conflict patterns can be further split based on the size range in parallel to be merged with the conflict splitting results to obtain the first layout and the second layout at the fastest speed, thereby improving the efficiency.

[0018] 2、The fourth splitting rule is to arrange the mask patterns in the first size mask patterns according to the arrangement order, and one row of mask patterns in the adjacent two rows is taken as a third part mask, and the other row of mask patterns is taken as a fourth part mask. This can quickly split the mask patterns and well keep the density of the mask patterns after splitting, thereby improving the quality of exposure imaging.

[0019] 3、The first splitting rule and the second splitting rule are both set based on the edge threshold value between the edges of two mask patterns and the angle threshold value between the angles of any two adjacent mask patterns. In this way, the rules are relatively simple during the splitting process, the calculation complexity is low, the memory consumption of the calculator is reduced, and the splitting speed is further improved.

[0020] 4、The first layout and the second layout are colored with two different colors respectively, which facilitates loading the corresponding mask patterns onto the mask plate and avoids errors.

[0021] 5. A topological relationship graph is established for the conflicting pattern, and the established topological relationship can well calibrate the position information of each mask pattern on the conflicting pattern, so that when the first part mask pattern and the second part mask pattern are colored, the coloring can be performed based on the topological relationship graph reference, coloring errors are avoided, and when there is missing coloring or error coloring, the topological relationship graph can be used for checking and correcting.

[0022] 6. The layout splitting device and electronic equipment suitable for the double photolithography technology have the same beneficial effects as the layout splitting method suitable for the double photolithography technology. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 is a flowchart of the layout splitting method suitable for the double photolithography technology provided by the first embodiment of the present application;

[0024] Figure 2 is a partial structure diagram of the initial layout provided by step S1 in the present application;

[0025] Figure 3 is a schematic diagram for determining whether there is a conflict between the edges of two mask patterns;

[0026] Figure 4A is a schematic diagram of the initial layout after step S2 is performed on the initial layout, which is divided into a conflicting pattern and a non-conflicting pattern;

[0027] Figure 4B is Figure 4A is an enlarged schematic diagram of the rectangular frame in the circle in

[0028] Figure 5A is another schematic diagram of the initial layout after step S2 is performed on the initial layout, which is divided into a conflicting pattern and a non-conflicting pattern;

[0029] Figure 5B is Figure 5A is an enlarged schematic diagram of the rectangular frame in the circle in

[0030] Figure 5C is an enlarged schematic diagram of another rectangular frame in the circle in Figure 5A

[0031] Figure 6 is a schematic diagram of the layout after step S4 is performed on the layout;

[0032] Figure 7 is a schematic diagram of the layout after step S4 is performed on the layout;

[0033] Figure 8A is an area region schematic diagram when calculating the area of the irregular pattern;

[0034] Figure 8B ​Area region diagram for calculating area of another unconventional pattern;

[0035] Figure 9 is a detailed flow chart of step S5;

[0036] Figure 10 is a detailed flow chart of coloring the first layout and the second layout;

[0037] Figure 11 is a topological relationship diagram established for the conflicting patterns;

[0038] Figure 12 is a diagram of splitting the obtained first layout and the second layout;

[0039] Figure 13 is a module diagram of the layout splitting device suitable for the double photolithography technology provided in the second embodiment of the present application;

[0040] Figure 14 is a module diagram of the electronic device provided in the third embodiment of the present application;

[0041] Figure 15 is a structural diagram of a computer system of a server suitable for implementing the embodiments of the present application.

DETAILED DESCRIPTION

[0042] For the purpose of the present application, the technical solutions and advantages are more clear and explicit, the present application is further described in detail below in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, and are not used to limit the present application.

[0043] Please refer to Figure 1 The first embodiment of the present application provides a layout splitting method suitable for double photolithography technology, which is used for splitting an initial layout into a first layout and a second layout, and includes the following steps:

[0044] S1, providing an initial layout, wherein the initial layout includes a plurality of mask patterns;

[0045] S2, splitting the plurality of mask patterns into conflicting patterns and non-conflicting patterns based on a preset first splitting rule;

[0046] S3, splitting the conflicting patterns into a first part of mask patterns and a second part of mask patterns based on a preset second splitting rule, wherein there is no conflict between the mask patterns in the first part of mask patterns and the second part of mask patterns;

[0047] S4, dividing the non-conflict pattern into first size mask patterns and second size mask patterns of at least two size levels based on a preset third splitting rule, the maximum size of the first size mask patterns being greater than the maximum size of the second size mask patterns; and

[0048] S5, merging one part of the first size mask patterns and the second size mask patterns respectively with the first partial mask pattern to obtain a first layout, and merging another part with the second partial mask pattern to obtain a second layout.

[0049] Referring to Figure 2 In step S1, an initial layout can be drawn by a graphic drawing software, and the initial layout includes one or more mask patterns 10. The graphic drawing software can include klayout software. The drawn initial layout is usually stored in a gds file format. Figure 2 The layout in

[0050] In step S2, the plurality of mask patterns are split into conflict patterns and non-conflict patterns based on a preset first splitting rule. Solving conflicts is a primary task in the layout splitting process. In step S2, the mask patterns are first divided into conflict patterns and non-conflict patterns, which facilitates further de-conflict processing of the conflict mask patterns, and improves the splitting speed.

[0051] Referring to Figure 3A and Figure 3B In some specific embodiments, the preset first splitting rule is as follows: set an edge threshold between any two adjacent edges of the mask patterns 10 and an angle threshold between any two adjacent angles of the mask patterns 10, and divide the mask patterns 10 smaller than the edge threshold or the angle threshold into conflict patterns, and the remaining into non-conflict patterns. As shown in Figure 3A The distance between the two edges of any two adjacent mask patterns 10 is too close, which will affect the imaging resolution, and is considered to exist conflict. As shown in Figure 3B The distance between the two adjacent angles of any two adjacent mask patterns 10 is too close, which will also affect the imaging resolution, and is considered to exist conflict, so the conflict problem can be solved by splitting.

[0052] It should be noted that there are other ways to judge whether there is conflict, such as minimum allowable period.

[0053] Optionally, the specific values of the edge threshold and the corner threshold are determined mainly according to the imaging resolution required in the exposure imaging process. As an example, the specific range of the edge threshold is 80-150 nm, and the specific range of the corner threshold is 80-150 nm. Optionally, the value of the edge threshold can also be 90 nm, 110 nm, 130 nm, or 140 nm. The value of the corner threshold can also be 90 nm, 110 nm, 130 nm, or 140 nm.

[0054] Referring to Figure 4A and Figure 5A , the mask patterns 10 on the initial layout are classified into conflict patterns and non-conflict patterns based on the edge threshold of 110 nm and the corner threshold of 110 nm. In Figure 4A and Figure 5A , the area marked in light gray is a non-conflict pattern, such as the part of the boxed area M, and the part in the same color as the area M also corresponds to a non-conflict pattern. Other areas except the part marked in light gray correspond to conflict patterns, such as the part of the boxed area N marked in black, and the part in the same color as the area N also corresponds to a non-conflict pattern. Among them Figure 4A and 5A are about two parts on the initial layout.

[0055] In order to better show the specific shape and arrangement rule of the mask patterns in the conflict patterns and the non-conflict patterns in Figure 4A and Figure 5A , further to Figure 4A , a part of the conflict pattern area is enlarged, as shown in Figure 4B , it can be clearly seen that in the mask pattern shown in Figure 4B , the corner distance between the two adjacent mask patterns 10 is 0.089 μm (89 nm), which is less than the corner threshold of 110 nm. It can be clearly seen from the attached Figure 5B that the distance between the adjacent mask patterns 10 is 0.114 μm (114 nm), which is greater than the edge threshold of 110 nm. In the mask pattern 10 shown in Figure 5C , the distance between the adjacent mask patterns 10 is 0.07 μm (70 nm), which is less than the edge threshold of 110 nm.

[0056] In the above step S3, the preset second splitting rule is that the edge threshold between any two adjacent mask pattern edges and the corner threshold between any two adjacent mask pattern corners are set, and the two mask patterns less than the edge threshold or the corner threshold are defined as a first part mask pattern and a second part mask pattern.

[0057] In some embodiments, if the mask patterns in the same row or the same column are less than the edge threshold or the angle threshold, the mask patterns in the same row or the same column can be classified into the first part mask or the second part mask. Of course, the two mask patterns can also be sequentially sorted, one of which is classified into the first part mask pattern and the other is classified into the second part mask pattern.

[0058] In this step S3, the values of the edge threshold and the angle threshold can be the same as or different from those in the above step S2.

[0059] Referring to Figure 6 , if the mask patterns 10 in the two adjacent rows or the two adjacent columns conflict, one row or one column of the two rows can be split as the first part mask pattern and the other row or the other column as the second part mask pattern. Alternatively, the mask patterns 10 in the odd rows are classified into the first part mask pattern and the mask patterns 10 in the even rows are classified into the second part mask pattern. In this way, the conflict problem can be solved and the distribution density of the mask patterns in the first part mask pattern and the distribution density of the mask patterns in the second part mask pattern can be well ensured to be similar, so that the exposure performance of the two can be ensured. If the conflict problem cannot be solved by such splitting, the proximity effect correction (OPC) stage can be further adjusted after the first layout or the second layout is obtained by subsequent splitting. For example Figure 6 , the mask patterns in the odd rows are classified into the first part mask pattern and the mask patterns in the even rows are classified into the second part mask pattern.

[0060] Referring to Figure 7 , in step S4, the third splitting rule is as follows: an area size threshold or a length size threshold is set, and the mask patterns on the non-conflict patterns exceeding the area size threshold or the length size threshold are classified into the first size mask pattern and the rest are classified into the second size mask pattern. As shown in Figure 7 , the area O corresponds to the first size mask pattern and the mask patterns in the area P are relatively small, which correspond to the second size mask pattern. The P1 area corresponds to the enlarged view of the rectangular frame area of the area P, and the O1 area corresponds to the enlarged view of the area O.

[0061] Referring to Figure 8A and Figure 8BIt needs to be further explained that when the mask pattern is a very regular shape, such as a rectangle, a square, in order to facilitate calculation, the length of the side of the rectangle can be calculated as follows: the starting coordinate and the end coordinate of the mask pattern in the X-axis direction, the starting coordinate and the end coordinate in the Y-axis direction, and the length of the side of the rectangle formed by connecting the four coordinates corresponds to the maximum side length of the mask pattern. In this way, it is not necessary to traverse each side, and the speed can be greatly improved.

[0062] It also needs to be explained that in addition to setting the area size threshold or the length size area threshold, a diagonal length threshold or other evaluation index threshold can also be set.

[0063] It needs to be explained that steps S3 and S4 can be performed simultaneously, or step S3 can be performed first and then step S4, or step S4 can be performed first and then step S3, and there is no order limitation. It is preferred that both are performed simultaneously, which can greatly improve the operation speed.

[0064] In step S5, based on the classification of the conflict-free patterns into two different size categories in step S4, the first size mask pattern and the second size mask pattern can be processed in parallel, and the first size mask pattern and the second size mask pattern can be split simultaneously, instead of being split one by one, which can greatly improve the splitting speed.

[0065] Please refer to Figure 9 , the steps of merging one part of the first size mask pattern and the second size mask pattern with the first part mask pattern to obtain the first layout, and merging the other part with the second part mask pattern to obtain the second layout are as follows:

[0066] S51, set the edge threshold between any two adjacent mask pattern edges, and the angle threshold between any two adjacent mask pattern angles, define one of the two mask patterns smaller than the edge threshold or the angle threshold as a third part mask pattern, and the other as a fourth part mask pattern, and define the mask pattern part larger than the edge threshold or the angle threshold as the third part mask pattern, and the other part as the fourth part mask pattern;

[0067] S52, merge the first part mask pattern with the third part mask pattern to obtain an initial first layout, and merge the second part mask pattern with the fourth part mask pattern to obtain an initial second layout;

[0068] S53, split one of the two mask patterns smaller than the edge threshold or the angle threshold on the second size mask pattern to the initial first layout and the other to the initial second layout, and assign the part of the mask pattern larger than the edge threshold or the angle threshold to the initial first layout and the other part to the initial second layout.

[0069] In the process of assigning the part of the mask pattern larger than the edge threshold or the angle threshold to the third part mask pattern and the other part to the fourth part mask pattern in step S51, one of them can be split to the third part mask pattern and the other to the fourth part mask pattern in the order of interval. Other ways can also be used as long as the split patterns do not conflict with each other.

[0070] In the process of assigning the part of the mask pattern larger than the edge threshold or the angle threshold to the initial first layout and the other part to the initial second layout in step S53, one of them can be split to the third part mask pattern and the other to the fourth part mask pattern in the order of interval. Other ways can also be used as long as the split patterns do not conflict with each other.

[0071] In order to load the patterns on the split first layout and second layout onto the mask plate more smoothly to prepare the two masks, it is further needed to color the mask patterns belonging to the first layout and the second layout. That is, color the first layout and the second layout with the first color and the second color respectively.

[0072] Please refer to Figure 10 The way of coloring the first layout and the second layout with the first color and the second color respectively includes the following steps:

[0073] T11, color the first part mask pattern with the first color and the second part mask pattern with the second color before merging the first layout and the second layout;

[0074] T12, then color the third part mask pattern and the fourth part mask pattern with the first color and the second color respectively;

[0075] T13, finally color the second size mask pattern split to the initial first layout and the initial second layout.

[0076] Step T11 can be performed after step S3. Step T12 can be performed after step S51. Step T13 can be performed after step S53.

[0077] In specific embodiments, coloring the first part of mask patterns with a first color and coloring the second part of mask patterns with a second color can be performed by taking each mask pattern in the conflicting patterns as a node, connecting the nodes with straight lines to form a topological relationship graph between the conflicting nodes, and coloring the first part of mask patterns and the second part of mask patterns based on the topological relationship graph.

[0078] Please refer to Figure 11 , the topological relationship graph is established for the conflicting mask patterns of Figure 6 . The established topological relationship can well calibrate the position information of each mask pattern on the conflicting patterns, so that when coloring the first part of mask patterns and the second part of mask patterns, the coloring can be performed based on the topological relationship graph, so as to avoid coloring errors. When there is missing coloring or error coloring, the topological relationship graph can be used for checking and correcting.

[0079] Please refer to Figure 12 , region A is the first layout and the second layout after splitting and coloring the initial layout composed of Figure 4A and Figure 5A . In order to make the display clearer, regions B, C, D and E in region A are enlarged views of the rectangular regions selected in region A, and regions B and C are second size mask patterns split based on step S4. It can be clearly seen from regions B and C that the second size mask patterns are colored in two different colors in a spaced manner, and the mask patterns colored in the same color (such as light color) correspond to the first layout, and the mask patterns colored in the other darker color correspond to the second layout.

[0080] Region D is a non-conflicting pattern split based on step S2, and region D is further split into first size mask patterns and second size mask patterns based on step S4. The elongated strip-shaped mask patterns correspond to the first size mask patterns, and the small rectangular mask patterns correspond to the second size mask patterns. The first size mask patterns in region D are further divided into third part mask patterns and fourth part mask patterns based on step S51. In region D, the mask patterns colored in light color correspond to the third part mask patterns, and the mask patterns colored in dark color correspond to the fourth part mask patterns. The second size mask patterns in region D are colored in light color and dark color in the manner of step S53, wherein the light color is the first layout and the dark color is the second layout. It can be clearly seen from region E that the conflicting patterns in Figure 5A are split according to step S3 and colored in two different colors of dark color and light color, wherein the mask patterns colored in the same color (such as light color) correspond to the first layout, and the mask patterns colored in the other darker color correspond to the second layout.

[0081] Figure 12 The middle area B-area E is a partial explanation of the first layout and the second layout obtained after steps S1-S5 are performed on the initial layout. The light color is the first layout, and the dark color is the second layout.

[0082] Referring to Figure 13 The second embodiment of the present application provides a layout splitting device 100 suitable for double photolithography technology, which is used for optimizing a mask to be optimized, and includes a layout design module 30, a first splitting module 40, a second splitting module 50, a third splitting module 60, and a fourth splitting module 70.

[0083] The layout design module 30 is used to provide an initial layout, and the initial layout includes a plurality of mask patterns.

[0084] The first splitting module 40 splits the plurality of mask patterns into conflict patterns and non-conflict patterns based on a preset first splitting rule.

[0085] The second splitting module 50 splits the conflict patterns into first part mask patterns and second part mask patterns based on a preset second splitting rule, and the first part mask patterns and the second part mask patterns do not conflict with each other.

[0086] The third splitting module 60 splits the non-conflict patterns into first size mask patterns and second size mask patterns of at least two size levels based on a preset third splitting rule, and the maximum size of the first size mask patterns is greater than the maximum size of the second size mask patterns.

[0087] The fourth splitting module 70 splits the first size mask patterns and the second size mask patterns into two parts respectively, one part is combined with the first part mask patterns to obtain a first layout, and the other part is combined with the second part mask patterns to obtain a second layout.

[0088] Referring to Figure 14 The third embodiment of the present application provides an electronic device 200, which includes one or more processors 201 and a storage device 202,

[0089] The storage device 202 is used to store one or more programs, and when the one or more programs are executed by the one or more processors 201, the one or more processors 201 implement the mask optimization method provided by the first embodiment.

[0090] The following refers to Figure 15 which shows a structural schematic diagram of a computer system 800 of a terminal device / server suitable for implementing the embodiments of the present application. Figure 15The terminal device / server shown is merely an example and should not bring any limitation to the function and use range of the embodiments of the present application.

[0091] As shown in Figure 15 the computer system 800 includes a central processing unit (CPU) 801 which can perform various appropriate actions and processes in accordance with a program stored in a read only memory (ROM) 802 or a program loaded from a storage section 808 into a random access memory (RAM) 803. In the RAM 803, various programs and data required for the operation of the system 800 are also stored. The CPU 801, the ROM 802, and the RAM 803 are connected to each other through a bus 804. An input / output (I / O) interface 805 is also connected to the bus 804.

[0092] The following components are connected to the I / O interface 805: an input section 806 including a keyboard, a mouse, etc.; an output section 807 including a display such as a cathode ray tube (CRT), a liquid crystal display (LCD), etc., and a speaker, etc.; a storage section 808 including a hard disk, etc.; and a communication section 809 including a network interface card such as a LAN card, a modem, etc. The communication section 809 performs a communication process via a network such as the Internet. A drive 810 is also connected to the I / O interface 805 as necessary. A removable recording medium 811 such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, etc. is attached to the drive 810 as necessary, so that a computer program read out therefrom is installed into the storage section 808 as necessary.

[0093] According to embodiments of the present disclosure, the processes described above with reference to the flowcharts can be implemented as a computer software program. For example, embodiments of the present disclosure include a computer program product comprising a computer program carried on a computer readable medium, the computer program comprising program code for executing the methods illustrated by the flowcharts. In such embodiments, the computer program can be downloaded and installed from a network by the communication section 809, and / or installed from the detachable medium 811. When the computer program is executed by the central processing unit (CPU) 801, the above-described functions defined in the methods of the present disclosure are executed. Note that the computer readable medium of the present disclosure can be a computer readable signal medium or a computer readable storage medium or any combination of the two. The computer readable storage medium may, for example, be, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus or device, or any combination of the above. More specific examples of the computer readable storage medium can include, but are not limited to, an electrical connection having one or more wires, a portable computer diskette, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above.

[0094] Computer program code for carrying out operations of the present application can be written in any combination of one or more programming languages, including an object oriented programming language such as Java, Smalltalk, C++ or the like, and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code can execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the latter scenario, the remote computer can be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or the connection can be made to an external computer (for example, through the Internet using an Internet Service Provider).

[0095] The computer program product of the present application can be a computer program embodied on a computer readable medium. The computer program product can be stored on a computer readable medium. The computer readable medium can be a transitory medium that does not include a program for more than a short time (e.g., for the time it takes to read in the program while the program is being executed by a computer). The computer readable medium can be a non-transitory medium, which can include a program embodied on a physical medium, e.g., a tangible medium (e.g., a computer readable storage medium). The computer readable medium can be a computer readable storage medium, a computer readable signal medium, or a combination of computer readable storage medium and computer readable signal medium.

[0096] The units described in the embodiments of the present application can be implemented by software or by hardware. As another aspect, the present application also provides a computer readable medium, which can be included in the apparatus described in the above embodiments, or can exist independently without being assembled into the apparatus.

[0097] The above only describes the preferred embodiments of the present application and is not intended to limit the present application. Any modification, equivalent replacement and improvement within the principles of the present application shall be included in the protection scope of the present application.

Claims

1. A method for splitting a layout for a double lithography technique, for splitting an initial layout into a first layout and a second layout, characterized in that, The method comprises the following steps: providing an initial layout, the initial layout comprising a plurality of mask patterns; splitting the plurality of mask patterns into conflict patterns and non-conflict patterns based on a preset first splitting rule; splitting the conflict patterns into first part mask patterns and second part mask patterns based on a preset second splitting rule, the first part mask patterns and the second part mask patterns having no conflict with each other; splitting the non-conflict patterns into first size mask patterns and second size mask patterns of at least two size levels based on a preset third splitting rule, the first size mask patterns having a maximum size greater than that of the second size mask patterns; and merging one part of the first size mask patterns and the second size mask patterns respectively with the first part mask patterns to obtain a first layout, and merging another part with the second part mask patterns to obtain a second layout.

2. The floorplan splitting method suitable for double lithography technique of claim 1, wherein, The steps of merging one part of the first size mask patterns and the second size mask patterns respectively with the first part mask patterns to obtain a first layout, and merging another part with the second part mask patterns to obtain a second layout are as follows: splitting the first size mask patterns into third part mask patterns and fourth part mask patterns based on a preset fourth splitting rule, the fourth splitting rule comprising: setting an edge threshold value between edges of any two adjacent mask patterns and an angle threshold value between angles of any two adjacent mask patterns, defining one of the two mask patterns smaller than the edge threshold value or the angle threshold value as a third part mask pattern and the other as a fourth part mask pattern, and defining the part of the mask pattern greater than the edge threshold value or the angle threshold value as the third part mask pattern and the other part as the fourth part mask pattern; merging the first part mask patterns with the third part mask patterns to obtain an initial first layout, and merging the second part mask patterns with the fourth part mask patterns to obtain an initial second layout; splitting one of any two adjacent mask patterns smaller than the edge threshold value or the angle threshold value on the second size mask patterns to the initial first layout and the other to the initial second layout, and defining the part of the mask pattern greater than the edge threshold value or the angle threshold value as the initial first layout and the other part as the initial second layout.

3. The floorplan splitting method suitable for double lithography technique of claim 1, wherein, The preset first splitting rule is as follows: setting an edge threshold value between edges of any two adjacent mask patterns and an angle threshold value between angles of any two adjacent mask patterns, and splitting the mask patterns smaller than the edge threshold value or the angle threshold value into conflict patterns and the remaining into non-conflict patterns.

4. The floorplan splitting method suitable for double lithography technique of claim 1, wherein, The preset second splitting rule is as follows: setting an edge threshold value between edges of any two adjacent mask patterns and an angle threshold value between angles of any two adjacent mask patterns, and defining one of the two mask patterns smaller than the edge threshold value or the angle threshold value as a first part mask pattern and the other as a second part mask pattern.

5. The method for layout decomposition suitable for double patterning technology as claimed in claim 1, wherein, The preset third splitting rule is as follows: An area size threshold or a length size threshold is set, and mask patterns on the conflict-free pattern exceeding the area size threshold or the length size threshold are classified as first size mask patterns, and the rest are classified as second size mask patterns.

6. The floorplanning method suitable for dual lithography technology as claimed in claim 2, wherein, The first layout and the second layout are colored with the first color and the second color respectively.

7. The floorplan splitting method suitable for double lithography technique of claim 6, wherein, The first layout and the second layout are colored with the first color and the second color respectively in the following manner: The first part of the mask patterns are colored with the first color and the second part of the mask patterns are colored with the second color before the first layout and the second layout are obtained by merging; Then the third part of the mask patterns and the fourth part of the mask patterns are colored with the first color and the second color respectively; Finally, the second size mask patterns split to the initial first layout and the initial second layout are colored.

8. The floorplan splitting method suitable for double lithography technique of claim 7, wherein, Each mask pattern in the conflict pattern is taken as a node with a circle, and a straight line is used to connect the nodes in conflict to form a topological relationship diagram, and the first part of the mask patterns and the second part of the mask patterns are colored based on the topological relationship diagram.

9. A layout decomposition apparatus suitable for a double patterning technique, characterized in that, A method for splitting an initial layout into a first layout and a second layout, comprising A layout design module for providing an initial layout, the initial layout comprising a plurality of mask patterns; A first splitting module for splitting the plurality of mask patterns into conflict patterns and conflict-free patterns based on a preset first splitting rule; A second splitting module for splitting the conflict patterns into a first part of mask patterns and a second part of mask patterns based on a preset second splitting rule, the mask patterns in the first part of mask patterns and the second part of mask patterns being conflict-free with each other; A third splitting module for splitting the conflict-free patterns into first size mask patterns and second size mask patterns of at least two size levels based on a preset third splitting rule, the maximum size of the first size mask patterns being greater than the maximum size of the second size mask patterns; A fourth splitting module for splitting the first size mask patterns and the second size mask patterns into two parts respectively, one part being merged with the first part of mask patterns to obtain the first layout, and the other part being merged with the second part of mask patterns to obtain the second layout.

10. An electronic device, comprising: It comprises one or more processors and storage devices, The storage device is used to store one or more programs, when the one or more programs are executed by the one or more processors, so that the one or more processors implement the layout splitting method suitable for dual photolithography technology as claimed in any one of claims 1-8.

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