Repair structure and electronic device

Abstract

The present disclosure provides a repair structure, including a signal line, a first insulating layer and a second insulating layer. The first insulating layer is disposed on the signal line. The second insulating layer is disposed on the first insulating layer. The first insulating layer has a first opening, and the first opening overlaps a portion of the signal line. The second insulating layer has a second opening, and the first opening and the second opening at least partially overlap. In this way, the design of the repair structure is simple, and the repair time can be reduced to increase the convenience of use.

Description

Technical Field

[0001] This disclosure relates to a repair structure, and more particularly to a repair structure and electronic device suitable for use in electronic devices. Background Technology

[0002] Signal lines in known electronic devices (such as scan lines, data lines, power lines, or signal drive lines) can be defective due to particles or electrostatic discharge (ESD), necessitating repair to eliminate these defects. However, current repair methods are time-consuming and complex. Therefore, a new repair design is needed to address these issues. Summary of the Invention

[0003] This disclosure provides a repair structure including a signal line, a first insulating layer, and a second insulating layer. The first insulating layer is disposed on the signal line. The second insulating layer is disposed on the first insulating layer. The first insulating layer has a first opening that overlaps a portion of the signal line. The second insulating layer has a second opening that corresponds to the first opening.

[0004] This disclosure provides an electronic device including a signal line, a light-emitting unit, a first insulating layer, and a second insulating layer. The light-emitting unit is electrically connected to the signal line. The first insulating layer is disposed on the signal line. The second insulating layer is disposed on the first insulating layer. The second insulating layer includes a well structure, and the well structure accommodates the light-emitting unit. The first insulating layer has a first opening that overlaps a portion of the signal line, and the second insulating layer has a second opening, the first opening and the second opening at least partially overlapping. Attached Figure Description

[0005] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings, wherein:

[0006] Figure 1 This is a schematic diagram of an electronic device according to an embodiment of the present disclosure.

[0007] Figure 2A This is a cross-sectional view of an electronic device according to an embodiment of the present disclosure.

[0008] Figure 2B for Figure 2A A cross-sectional view of an electronic device being laser-cut.

[0009] Figure 2C for Figure 2A A cross-sectional view of an electronic device being laser-welded.

[0010] Figure 3A This is a cross-sectional view of an electronic device according to another embodiment of the present disclosure.

[0011] Figure 3B for Figure 3A A cross-sectional view of an electronic device being laser-cut.

[0012] Figure 3C for Figure 3A A cross-sectional view of an electronic device being laser-welded.

[0013] Figure 4 This is a schematic diagram of a repair operation of an electronic device according to an embodiment of the present disclosure.

[0014] Figure 5 This is a schematic diagram of a repair operation of an electronic device according to an embodiment of the present disclosure.

[0015] Symbol Explanation

[0016] 100: Electronic devices

[0017] 110: Power Supply Unit

[0018] 200, 300: Repairing the structure

[0019] 210: Signal line

[0020] 210C: Connecting part

[0021] 211: Cutting section

[0022] 212: Part

[0023] 220: First insulating layer

[0024] 221, 221B, 221C: First opening

[0025] 230: Second insulating layer

[0026] 231, 231B, 231C: Second opening

[0027] 240: Third insulation layer

[0028] 250: Fourth Insulation Layer

[0029] 260: Laser source

[0030] 262, 264, 266: Conductive structures

[0031] 268: Well Structure

[0032] 270: Fifth Insulation Layer

[0033] 271: Gap

[0034] 280,RL: Repair line

[0035] 410, 420, 430, 440, 450, 510, 520, 530, 540, 550: Position

[0036] D1, D2: Width

[0037] DL: Data cable

[0038] GL: Scan line

[0039] PL1: First power line

[0040] PL2: Second power supply line

[0041] EML: Drive signal line

[0042] C: Capacitor

[0043] T1, T2, T3: Switches

[0044] LD: Light Emitting Unit

[0045] GE: Gate

[0046] S: Source

[0047] D: Drain electrode

[0048] IN: Insulation layer

[0049] SE: Semiconductor

[0050] VDD: Power supply

[0051] VSS: Reference voltage

[0052] DS1: Data signal

[0053] GS1: Scan signal

[0054] EM1: Drive signal Detailed Implementation

[0055] To make the objectives, features, or advantages of this disclosure more apparent, embodiments are described below in conjunction with the accompanying drawings. For ease of understanding and for the sake of brevity, many of the drawings in this disclosure may depict only a portion of the entire device, and specific elements in the drawings are not drawn to scale.

[0056] This disclosure provides different embodiments to illustrate the technical features of different implementations of this disclosure. The configuration, quantity, and size of the elements in the embodiments are for illustrative purposes only and are not intended to limit this disclosure. Furthermore, if element reference numerals appear repeatedly in the embodiments and accompanying drawings, it is for simplification and does not imply any correlation between different embodiments.

[0057] Furthermore, the use of ordinal numbers such as "first" and "second" in the specification and claims to modify the elements of the claims does not imply or represent any prior ordinal number of the claimed component, nor does it represent the order of one claimed element with another claimed element, or the order of manufacturing methods. The use of these ordinal numbers is only to enable a claimed element with a certain name to be clearly distinguished from another claimed element with the same name.

[0058] In the following description and claims, the terms "comprising" and "including" are open-ended terms and should therefore be interpreted as "containing but not limited to...". It should be understood that when an element or membrane is referred to as being "on" or "connected" to another element or membrane, it may be directly on or directly connected to that other element or membrane, or there may be an inserted element or membrane between them (in a non-direct case). Conversely, when an element is referred to as being "directly" on or "directly connected" to another element or membrane, there may be no inserted element or membrane between them.

[0059] In this disclosure, length and width can be measured using an optical microscope, and thickness can be measured from a cross-sectional image in an electron microscope, but are not limited thereto. Furthermore, any two values ​​or directions used for comparison may contain a certain degree of error.

[0060] In this disclosure, features of various embodiments can be arbitrarily combined and used as long as they do not violate the spirit of the invention or conflict with each other.

[0061] Figure 1This is a schematic diagram of an electronic device according to an embodiment of the present disclosure. In one embodiment, the electronic device 100 may include liquid crystal (LC), organic light-emitting diode (OLED), inorganic light-emitting diode (LED), quantum dot (QD), fluorescent material, phosphorescent material, other suitable materials, or combinations of the above materials, but the present disclosure is not limited thereto. Inorganic light-emitting diodes may include, for example, mini light-emitting diodes (mini LEDs), micro light-emitting diodes (micro LEDs), or quantum dot light-emitting diodes (QLEDs / QDLEDs).

[0062] In some embodiments, the electronic device 100 may be a display device, an antenna device, a sensing device, a touch display, a curved display, or a free-shape display, and may also be a bendable or flexible splicing electronic device, but is not limited thereto. The antenna device may be, for example, a liquid crystal antenna, but is not limited thereto. It should be noted that the electronic device 100 may be any of the aforementioned arrangements and combinations, but is not limited thereto. Furthermore, the shape of the electronic device 100 may be rectangular, circular, polygonal, have curved edges, or other suitable shapes. The electronic device 100 may have peripheral systems such as a driving system, a control system, a light source system, and a shelving system to support the display device or antenna device.

[0063] In one embodiment, the electronic device 100 may be a display device, but this disclosure is not limited thereto. Please refer to Figure 1 The electronic device 100 may include a power supply unit 110, switches T1, T2, and T3, a capacitor C, and a light-emitting unit LD. For example... Figure 1 As shown, the electronic device 100 may further include a repair structure 200, which may include a signal line 210. For example... Figure 1 As shown, signal line 210 can be a data line DL. Figure 2A This is a cross-sectional view of an electronic device 100 according to an embodiment of the present disclosure, showing the positional relationship between the repair structure 200, switch T1, switch T2, switch T3, and light-emitting unit LD. Figure 1In this embodiment, signal line 210 is exemplified by data line DL. According to other embodiments, the signal line may be gate line GL, drive signal line EML, other signal lines, or combinations thereof.

[0064] Please refer to Figure 2A The repair structure 200 may include a signal line 210, a first insulating layer 220, and a second insulating layer 230. The first insulating layer 220 is disposed on the signal line 210, and the second insulating layer 230 is disposed on the first insulating layer 220. The first insulating layer has a first opening 221, and the second insulating layer 230 has a second opening 231. The first opening 221 overlaps a portion of the signal line 210, and the first opening 221 and the second opening 231 at least partially overlap.

[0065] Please refer to Figure 1 Switch T1 is coupled to power supply unit 110. In one embodiment, switch T1 may be a thin film transistor (TFT), but this disclosure is not limited thereto. Power supply unit 110 provides a power supply VDD, and power supply unit 110 provides power supply VDD to switch T1 through a first power supply line PL1. Switch T2 is coupled to switch T1. In one embodiment, switch T2 may be a thin film transistor, but this disclosure is not limited thereto. In addition, the gate of switch T2 may receive a drive signal EM1 through a drive signal line EML.

[0066] Capacitor C is coupled to switch T1. Furthermore, the first terminal of capacitor C can be coupled to the gate of switch T1, and the second terminal of capacitor C can be coupled to one electrode (e.g., the source) of switch T1.

[0067] Switch T3 is coupled to switch T1. In one embodiment, switch T3 may be a thin-film transistor, but this disclosure is not limited thereto. Furthermore, the gate of switch T3 may receive scan signal GS1 through a scan line GL, and an electrode (e.g., the source) of switch T1 may receive data signal DS1 through a data line DL.

[0068] The light-emitting unit LD is coupled to the switch T2. More specifically, the first end (e.g., the anode) of the light-emitting unit LD is coupled to one electrode (e.g., the drain) of the switch T2, and the second end (e.g., the cathode) of the light-emitting unit LD is coupled to a reference voltage VSS (e.g., ground voltage) through a second power line PL2. In this embodiment, the light-emitting unit LD can be an organic light-emitting diode (OLED), an inorganic light-emitting diode (LED), a sub-millimeter light-emitting diode (mini LED), a micro LED, a quantum dot light-emitting diode (QLED / QD-LED), or a combination thereof, but this disclosure is not limited thereto.

[0069] In this embodiment, the repair structure 200 can be pre-set at the location of the electronic device 100 that needs repair, so that when a defect occurs in the electronic device 100, the circuit of the electronic device 100 can be repaired through the repair structure 200. The repair structure 200 may include a signal line 210, a first insulating layer 220, a second insulating layer 230, a third insulating layer 240, a fourth insulating layer 250, a fifth insulating layer 270, and a repair line 280.

[0070] A first insulating layer 220 is disposed on the signal line 210. A second insulating layer 230 is disposed on the first insulating layer 220. The first insulating layer 220 has a first opening 221, and the first opening 221 overlaps a portion of the signal line 210. The second insulating layer 230 has a second opening 231, and the first opening 221 and the second opening 231 at least partially overlap. A fifth insulating layer 270 is disposed between the signal line 210 and the patch line 280. In this embodiment, the width D2 of the second opening 231 is, for example, greater than the width D1 of the first opening 221. The width D1 may be the width of the bottom of the first opening 221. The width D2 may be the width of the bottom of the second opening 231.

[0071] In this embodiment, the first insulating layer 220 may be a planarization layer (PLN) and the second insulating layer 230 may be a pixel defining layer (PDL), but this disclosure is not limited thereto.

[0072] In some embodiments, the materials of the signal line 210 and the repair line 280 may be conductive materials, such as metallic materials, but this disclosure is not limited thereto. The materials of the first insulating layer 220, the second insulating layer 230, the third insulating layer 240, the fourth insulating layer 250, and the fifth insulating layer 270 are not limited and may be organic materials, inorganic materials, or combinations thereof. According to some embodiments, the first insulating layer 220 and the second insulating layer 230 may be organic materials, but this disclosure is not limited thereto. Organic materials may be, for example, acrylic resin, epoxy resin, silicon carbide, other resins, or combinations thereof, but this disclosure is not limited thereto. The materials of the third insulating layer 240, the fourth insulating layer 250, and the fifth insulating layer 270 may be inorganic materials, such as silicon nitride (SiNx), silicon oxide (SiOx), or combinations thereof, but this disclosure is not limited thereto.

[0073] In some embodiments, the thickness of the second insulating layer 230 is, for example, greater than the thickness of the first insulating layer 220. In some embodiments, the thickness of the second insulating layer 230 may be 4 to 10 micrometers (µm), for example, 5 to 6 micrometers. In some embodiments, the thickness of the first insulating layer 220 may be 1 to 3 micrometers, for example, 1.7 to 2.3 micrometers. Further, the thickness of the first insulating layer 220 may be 2 micrometers. Additionally, in some embodiments, the thickness of the first insulating layer 220 may be greater than the thickness of the signal line 210. In some embodiments, the thickness of the signal line 210 may be 0.2 to 1 micrometer, for example, 0.4 to 0.8 micrometers, for example, 0.51 to 0.69 micrometers. Further, the thickness of the signal line 210 may be 0.6 micrometers. In some embodiments, the thickness of the third insulating layer 240 and the fourth insulating layer 250 may be less than the thickness of the first insulating layer 220. The thickness of the third insulating layer 240 and the fourth insulating layer 250 may be 0.2 to 1 micrometer, for example, 0.425 to 0.575 micrometers. Furthermore, the thickness of the third insulating layer 240 and the fourth insulating layer 250 can be 0.5 micrometers.

[0074] In this embodiment, signal line 210 may be data line DL of electronic device 100, but this disclosure is not limited thereto. In some embodiments, signal line 210 may also be scan line GL, first power line PL1, drive signal line EML, or second power line PL2, which can also achieve a similar repair effect.

[0075] like Figure 2A As shown, in this embodiment, the user can operate a laser source 260 to generate a laser beam, and the laser beam generated by the laser source 260 can pass through the second opening 231 of the second insulating layer 230 and the first opening 221 of the first insulating layer 220 to the signal line 210, so as to perform laser cutting or laser welding on the signal line 210. The following is a detailed description.

[0076] Please refer to Figure 4 The signal line 210 can be a data line DL and is electrically connected to the light-emitting unit LD. When a defect occurs at position 410 of the data line DL, positions 420 and 430 on both sides of the defect position 410 can be cut. The defect may be caused by, for example, damage from particles or electrostatic discharge. At least one of the cut positions 420 and 430 can be repaired using the repair structure 200 described above.

[0077] Please refer to the following at the same time Figure 2B and Figure 4The signal line 210 can be laser-cut. Specifically, at least one of the cutting positions 420 and 430 on the signal line 210 (data line DL) can be laser-cut to obtain... Figure 2B The repair structure 200 is shown. According to other embodiments, signal line 210 may be a gate line GL or a data signal line EML, but this disclosure is not limited thereto. Figure 2B As shown, when laser beams are used for laser cutting, the portion of the signal line 210 that overlaps with the position of the laser source 260 will be cut by the laser source 260. Specifically, the laser beam generated by the laser source 260 can pass through the second opening 231 of the second insulating layer 230 and the first opening 221 of the first insulating layer 220 to the signal line 210, causing the signal line 210 to be melted and cut by the laser source 260, thus forming a cut portion 211 within the signal line 210 to achieve signal isolation.

[0078] Please refer to the following at the same time Figure 2C and Figure 4 Laser soldering can be performed on signal line 210. Specifically, at least one of soldering positions 440 and 450 on signal line 210 (data line DL) can be laser soldered to obtain... Figure 2C The repair structure 200 is shown. (As shown) Figure 2C As shown, when laser welding is performed using a laser beam, a portion 212 of the signal line 210 overlapping with the laser source 260 can be melted by the laser source 260. Specifically, the laser beam generated by the laser source 260 passes through the second opening 231 of the second insulating layer 230 and the first opening 221 of the first insulating layer 220, causing a portion of the fifth insulating layer 270 overlapping with the laser source 260 to be cut by the laser source 260, forming a notch 271 within the fifth insulating layer 270. A portion of the signal line 210 melts and falls along the sidewall formed by the notch 271 in the fifth insulating layer 270 onto the repair line 280. Thus, the melted signal line 210 is formed within the notch 271, and as a connecting portion 210C, the signal line 210 can be electrically connected to the repair line 280 via the connecting portion 210C. In this way, the signal transmitted by the signal line 210 can be transmitted through the repair line 280, achieving the effect of signal repair. In this way, the design of the repair structure 200 is simple, which can reduce the repair time and increase the convenience of use. In some embodiments, the connecting portion 210C may at least partially overlap with at least one of the first opening 221 and the second opening 231, but this disclosure is not limited thereto.

[0079] Based on some embodiments, please refer to Figure 4The signal line 210 (data line DL) may simultaneously have a laser-cut position 420 and a laser-welded position 440. More specifically, in the electronic device 100, the first insulating layer 220 may have a first opening 221C (e.g., ...). Figure 2C ) and another first opening 221B (e.g. Figure 2B The second insulating layer 230 may have a second opening 231C. Figure 2C ) and another second opening 231B ( Figure 2B The other first opening 221B and the other second opening 231C at least partially overlap. Figure 2C As shown, laser welding can be performed at a location overlapping at least one of the first opening 221C and the second opening 231C, allowing the signal line 210 to be electrically connected to the repair line 280 via the connector 210C. Figure 2B As shown, a laser cut can be performed at a location that overlaps with at least one of the other first opening 221B and the other second opening 231B to form a cut portion 211 of the signal line 210. The cut portion 211 at least partially overlaps with at least one of the other first opening 221B and the other second opening 231B.

[0080] In some embodiments, the width D1 of the first opening 221 of the first insulating layer 220 or the width D2 of the second opening 231 of the second insulating layer 230 can be greater than or equal to the width of the laser beam of the laser source 260, thus facilitating laser cutting or laser welding. For example, when using the laser beam of the laser source 260 to laser cut the signal line 210, the aforementioned opening width design allows for metal sputtering. Furthermore, the size of the laser beam of the laser source 260 can be 3 micrometers x 3 micrometers, but this disclosure is not limited thereto. For example, the width D1 of the first opening 221 of the first insulating layer 220 or the width D2 of the second opening 231 of the second insulating layer 230 can be greater than or equal to 3 micrometers, but this disclosure is not limited thereto.

[0081] Furthermore, the third insulating layer 240 is disposed between the signal line 210 and the first insulating layer 220, and a portion of the third insulating layer 240 may be exposed through the first opening 221 of the first insulating layer 220. The fourth insulating layer 250 is disposed between the first insulating layer 220 and the second insulating layer 230, and a portion of the fourth insulating layer 250 may be located within the first opening 221 of the first insulating layer 220, while this portion of the fourth insulating layer 250 is also located on the third insulating layer 240.

[0082] Please refer to Figure 1 and Figure 2AIn this embodiment, switches T1, T2, and T3 may each include a gate GE, a source S, a drain D, a semiconductor SE, and an insulating layer IN. The insulating layer IN may be disposed between the semiconductor SE and the gate GE. Specifically, the gate GE of switch T3 corresponds to... Figure 1 The gate and source S of switch T3 correspond to Figure 1 The source and drain of switch T3 are connected to D. Figure 1 The source of switch T3. The gate GE of switch T1 corresponds to... Figure 1 The gate and source S of switch T1 correspond to Figure 1 The source and drain of switch T1 are connected to the corresponding terminal D. Figure 1 The drain of switch T1. The gate GE of switch T2 corresponds to... Figure 1 The gate and source S of switch T2 correspond to... Figure 1 The source and drain of switch T2 are connected to D. Figure 1 The drain of switch T2.

[0083] Figure 2A Taking switches T1, T2, and T3 as top-gate transistors as an example, this disclosure is not limited thereto. According to some embodiments, switches T1, T2, and T3 may also be top-gate transistors, bottom-gate transistors, or combinations thereof.

[0084] According to some embodiments, such as Figure 1 and Figure 2A As shown, signal line 210 can be data line D1, and signal line 210 is coupled to the source S of switch T3. Electronic device 100 also includes conductive structures 262, 264, and 266. Conductive structure 262 can be a trace coupling the first end (e.g., the anode) of the light-emitting unit LD to switch T2. Conductive structure 264 can be a trace coupling the power supply unit 110 to switch T3, such as the first power supply line PL1. Conductive structure 266 can be a trace coupling the second end (e.g., the cathode) of the light-emitting unit LD to a reference voltage VSS (e.g., ground voltage), such as the second power supply line PL2. A well structure 268 may be included on the second insulating layer 230 to accommodate the light-emitting unit LD of electronic device 100. Furthermore, in this embodiment, the width of the well structure 268 can be greater than the width D1 of the first opening 221 or the width D2 of the second opening 231, but this disclosure is not limited thereto.

[0085] Figure 3A A cross-sectional view of an electronic device 100 according to another embodiment of this disclosure shows the positional relationship between the repair structure 300, switch T1, switch T2, switch T3, and light-emitting unit LD. Please refer to... Figure 3AThe electronic device 100 includes switches T1, T2, and T3, conductive structures 262, 264, and 266, a light-emitting unit LD, and a repair structure 300. In this embodiment, switches T1, T2, and T3, conductive structures 262, 264, and 266, the light-emitting unit LD, and... Figure 2A The embodiments are the same or similar, and can be referred to. Figure 2A The embodiments are described in detail here, so they will not be repeated here.

[0086] In this embodiment, the repair structure 300 can be pre-set at the location of the electronic device 100 that needs repair, so that when a defect occurs in the electronic device 100, the circuit of the electronic device 100 can be repaired through the repair structure 300. The repair structure 300 may include a signal line 210, a first insulating layer 220, a second insulating layer 230, a third insulating layer 240, a fourth insulating layer 250, a fifth insulating layer 270, and a repair line 280. Figure 3A The arrangement relationship between the signal line 210, the first insulating layer 220, the second insulating layer 230, the third insulating layer 240, the fourth insulating layer 250, the fifth insulating layer 270 and the repair line 280 in the repair structure 300 is as follows: Figure 2A The signal line 210, first insulating layer 220, second insulating layer 230, third insulating layer 240, fourth insulating layer 250, and fifth insulating layer 270 of the repair structure 200 are configured similarly to the repair line 280. (Refer to...) Figure 2A The embodiments are described in detail here, so they will not be repeated here.

[0087] In this embodiment, the width D2 of the second opening 231 is, for example, smaller than the width D1 of the first opening 221. This further reduces the chance of particles remaining in the second opening 231, thereby mitigating the problem of the signal line 210 being damaged by pressure or electrostatic discharge (ESD). In some embodiments, these particles may be generated by the process, process environment, or process equipment, but this disclosure is not limited thereto.

[0088] In this embodiment, the user can operate a laser source 260 to generate a laser beam, and the laser beam generated by the laser source 260 can pass through the second opening 231 of the second insulating layer 230 and the first opening 221 of the first insulating layer 220 to the signal line 210, so as to perform laser cutting or laser welding on the signal line 210.

[0089] like Figure 3BAs shown, when laser cutting is performed using a laser beam, the portion 211 of the signal line 210 overlapping with the laser source 260 will be cut by the laser source 260. Specifically, the laser beam generated by the laser source 260 can pass through the second opening 231 of the second insulating layer 230 and the first opening 221 of the first insulating layer 220 to the signal line 210, causing the signal line 210 to be melted and cut by the laser source 260, thus forming a cut portion 211 within the signal line 210 to achieve signal isolation. Similarly, as described above... Figure 4 In the process, at least one of the cutting positions 420 and 430 of the data cable DL may have Figure 3B The repair structure 200 shown will not be described in detail here.

[0090] like Figure 3C As shown, when laser welding is performed using a laser beam, a portion 212 of the signal line 210 overlapping with the laser source 260 can be melted by the laser source 260. Specifically, the laser beam generated by the laser source 260 passes through the second opening 231 of the second insulating layer 230 and the first opening 221 of the first insulating layer 220, causing a portion of the fifth insulating layer 270 overlapping with the laser source 260 to be cut by the laser source 260, forming a notch 271 within the fifth insulating layer 270. A portion of the signal line 210 melts and falls along the sidewall formed by the notch 271 in the fifth insulating layer 270 onto the repair line 280. Thus, the melted signal line 210 is formed within the notch 271, and as a connecting portion 210C, the signal line 210 can be electrically connected to the repair line 280 via the connecting portion 210C. Thus, the signal line 210 can be electrically connected to the repair line 280. Next, the signal transmitted by signal line 210 can be transmitted through repair line 280 to achieve signal repair. In this way, the repair structure 300 is simple in design, reducing repair time and increasing ease of use. Similarly, as described above, Figure 4 In the process, at least one of welding position 440 and welding position 450 may have Figure 3C The repair structure 300 shown will not be described in detail here.

[0091] The repair structure 200 (or repair structure 300) described above is disposed at positions 420, 430, 440 and 450 of the data line DL of the electronic device 100, which is one embodiment of the present disclosure, but the present disclosure is not limited thereto. The repair structure 200 (or repair structure 300) can also be disposed at other positions of the data line DL of the electronic device 100, and the same repair effect can be achieved.

[0092] Figure 5This is a schematic diagram of a repair structure disposed in an electronic device according to an embodiment of the present disclosure. Please refer to... Figure 5 The signal line 210 of the repair structure 200 (or repair structure 300) can be the drive signal line EML of the electronic device 100, and the repair structure 200 (or repair structure 300) can also be provided on positions 520, 530, 540 and 550 of the data signal line EML of the electronic device 100. The drive signal line EML can be electrically connected to the light-emitting unit LD. When a defect occurs on position 510 of the drive signal line EML, a laser light source can be used to cut positions 520 and 530 on both sides of the defect position 510 on the drive signal line EML. At least one of the cutting positions 520 and 530 can adopt the repair structure of this disclosure. In detail, at least one of the cutting positions 520 and 530 can have Figure 2B The repair structure 200 shown or Figure 3B The repair structure 300 is shown.

[0093] Additionally, laser beams from laser source 260 are used to perform laser welding at positions 540 and 550 of the electronic device 100, electrically connecting the drive signal line EML to the repair line RL (280). For example, at least one of the welding positions 540 and 550 on the drive signal line EML can be laser welded, thus having... Figure 2C The repair structure 200 shown or Figure 3C The repair structure 300 is shown. Specifically, at least one of the welding positions 540 and 550 may have… Figure 2C The repair structure 200 shown or Figure 3C The repair structure 300 is shown. In this way, the signal line 210 (e.g., data signal line EML) and the repair line 280 (e.g., repair line RL) are connected, so that the signal transmitted by the drive signal line EML can be transmitted through the repair line RL to achieve the repair effect.

[0094] The repair structure 200 (or repair structure 300) described above is disposed at positions 520, 530, 540, and 550 of the drive signal line EML of the electronic device 100, which is one embodiment of the present disclosure, but the present disclosure is not limited thereto. The repair structure 200 (or repair structure 300) can also be disposed at other positions of the drive signal line EML of the electronic device 100, and the same repair effect can be achieved.

[0095] Furthermore, when the signal line 210 of the repair structure 200 (or repair structure 300) can be a scan line GL, a first power line PL1, or a second power line PL2 of the electronic device 100, the manner in which the signal line 210 of the repair structure 200 (or repair structure 300) is disposed on the scan line GL, the first power line PL1, or the second power line PL2 of the electronic device 100 can be referred to Figure 4 or Figure 5 The embodiments are as described above, so they will not be repeated here.

[0096] In summary, according to the repair structure of this disclosure, a first insulating layer is disposed on the signal line, and a second insulating layer is disposed on the first insulating layer. A first opening in the first insulating layer overlaps a portion of the signal line, and the first opening and the second opening at least partially overlap. Laser cutting and laser welding can be performed on the signal line via the first and second openings. This design simplifies the repair structure, reduces repair time, and increases ease of use.

[0097] Although this disclosure is provided above with reference to embodiments, it is not intended to limit the scope of this disclosure. Any person skilled in the art may make some combinations, modifications and refinements without departing from the spirit and scope of this disclosure. Therefore, the scope of protection of this disclosure shall be determined by the claims.

Claims

1. A patching structure, characterized by, include: A signal line includes a cut position and a solder position; A first insulating layer is disposed on the signal line; A second insulating layer is disposed on the first insulating layer; Wherein, at the welding position, the first insulating layer has a first opening, the second insulating layer has a second opening, the first opening overlaps a portion of the signal line, and the first opening and the second opening at least partially overlap; At the cutting position, the first insulating layer has a third opening, the second insulating layer has a fourth opening, and the third opening and the fourth opening at least partially overlap. The signal line has a cut portion at the cut position, which at least partially overlaps with the third opening and the fourth opening; A third insulating layer, including a notch; A connecting portion is disposed within the notch of the third insulating layer, the connecting portion at least partially overlapping the first opening and the second opening; and A repair wire is electrically connected to the signal wire at the soldering position via the connector, wherein the third insulating layer is disposed between the signal wire and the repair wire.

2. The repair structure as described in claim 1, characterized in that, The width of the second opening is smaller than the width of the first opening.

3. The repair structure as described in claim 1, characterized in that, The width of the second opening is greater than the width of the first opening.

4. The repair structure as described in claim 1, characterized in that, This signal line is a data line.

5. The repair structure as described in claim 1, characterized in that, The signal line is electrically connected to the gate of a thin-film transistor.

6. The repair structure as described in claim 1, characterized in that, This signal line is a power supply line.

7. An electronic device, characterized in that, include: A signal line includes a cut position and a solder position; A light-emitting unit is electrically connected to the signal line; A first insulating layer is disposed on the signal line; A second insulating layer is disposed on the first insulating layer, the second insulating layer including a well structure, and the well structure accommodating the light-emitting unit; Wherein, at the welding position, the first insulating layer has a first opening, the second insulating layer has a second opening, the first opening overlaps a portion of the signal line, and the first opening and the second opening at least partially overlap; At the cutting position, the first insulating layer has a third opening, the second insulating layer has a fourth opening, and the third opening and the fourth opening at least partially overlap. The signal line has a cut portion at the cut position, which at least partially overlaps with the third opening and the fourth opening; A third insulating layer, including a notch; A connecting portion is disposed within the notch of the third insulating layer, the connecting portion at least partially overlapping the first opening and the second opening; and A repair wire is electrically connected to the signal wire at the soldering position via the connector, wherein the third insulating layer is disposed between the signal wire and the repair wire.

8. The electronic device as claimed in claim 7, characterized in that, This signal line is a data line.

9. The electronic device as claimed in claim 7, characterized in that, The signal line is electrically connected to the gate of a thin-film transistor.

10. The electronic device as claimed in claim 7, characterized in that, This signal line is a power supply line.

Images