A splicable display module, a preparation method and a display device

Abstract

The application discloses a splicable display module, a preparation method and a display device. The display module comprises a light-transmitting carrier substrate, a circuit board, a driving module and a plurality of LED light-emitting chips. The LED light-emitting chips and the driving module are arranged on opposite sides of the circuit board. On one side of the circuit board provided with the LED light-emitting chips, an area for fixing the driving module is not needed, that is, the edge of the side does not have an area without the LED light-emitting chips. In the display screen formed by splicing, the area without the LED light-emitting chips does not exist at the splicing joint between the two LED display modules spliced with each other, thereby reducing the pixel pitch at the splicing joint, improving the resolution of the display screen, optimizing the display effect. The LED light-emitting chips are transferred to the die bonding structure on the carrier substrate in advance, and then the carrier substrate carrying the LED light-emitting chips is laminated with the circuit board, so that the efficiency and position accuracy of fixing the LED light-emitting chips to the circuit board are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of LED display, in particular to a display module capable of being spliced, a preparation method and a display device. BACKGROUND

[0002] An LED display screen is a kind of flat panel display, which is composed of a plurality of LED display modules spliced together, and is used to display various information such as text, images, videos and video signals. Since the LED display screen has good area extension, it is often applied in the field of advertisement and other fields requiring large-size display screen.

[0003] However, as the resolution requirement of the display screen is getting higher and higher, it is required that the pixel spacing in the display screen is getting smaller and smaller. In the existing LED display screen, the spliced LED modules have the problem of too large splicing seam at the splicing position, so that the local pixel spacing at the splicing seam is too large, which affects the overall display effect of the display screen. SUMMARY

[0004] The present application provides a display module capable of being spliced, a preparation method and a display device, which can reduce the pixel spacing at the splicing seam when the display module is spliced, and improve the resolution of the display screen.

[0005] In a first aspect, the present application provides a display module capable of being spliced, comprising: a light-transmitting carrier substrate, a circuit board, a driving module and a plurality of LED light-emitting chips.

[0006] The circuit board comprises a first pad layer and a second pad layer arranged oppositely, and at least one circuit layer between the first pad layer and the second pad layer, and an insulating layer is arranged between two adjacent layers of the first pad layer, the second pad layer and the at least one circuit layer, and the first pad layer, the second pad layer and the at least one circuit layer are electrically connected through a conductive via hole penetrating the insulating layer.

[0007] The LED light-emitting chip is arranged on the first pad layer and electrically connected with the first pad layer, and the driving module is arranged on the second pad layer and electrically connected with the second pad layer.

[0008] The carrier substrate is provided with a light-transmitting die-bonding structure for fixing the LED light-emitting chip, and the LED light-emitting chip is fixed on the die-bonding structure.

[0009] Optionally, the die-bonding structure comprises a positioning groove formed by a protrusion arranged on the carrier substrate, and the LED light-emitting chip is fixed in the positioning groove.

[0010] Optionally, the LED light emitting wafer is a vertical wafer, and the die bonding structure further comprises a die bonding pad formed on the carrier substrate, and the bump is arranged on the edges of at least two opposite sides of the die bonding pad.

[0011] The first pad layer comprises a plurality of first pads and a plurality of second pads, the first electrode of the vertical wafer is electrically connected to the first pad corresponding to the vertical wafer, the die bonding pad serves as a second electrode of the vertical wafer, and the die bonding pad is electrically connected to the second pad corresponding to the vertical wafer.

[0012] Optionally, the bump is a conductive bump, an anisotropic conductive adhesive is arranged between the circuit board and the carrier substrate, the first electrode of the vertical wafer is electrically connected to the first pad through the anisotropic conductive adhesive, and the bump is electrically connected to the second pad through the anisotropic conductive adhesive.

[0013] Optionally, the vertical wafer comprises, in sequence, a first electrode, a conductive layer, a distributed Bragg reflector layer, a P-type layer, a light emitting layer and an N-type layer.

[0014] Optionally, a sidewall of the vertical wafer is provided with an insulating protective layer.

[0015] Optionally, the circuit board comprises, in sequence, a first pad layer, a first insulating layer, a first circuit layer, a second insulating layer, a second circuit layer, a third insulating layer and a second pad layer.

[0016] The first insulating layer is coated with an ink layer in regions other than the pad on a surface close to the carrier substrate, or the carrier substrate is coated with an ink layer in regions other than the die bonding structure on a surface close to the circuit board.

[0017] Optionally, the insulating layer is glass, and the circuit in the circuit layer is a nano silver wire, a carbon nanotube, an ITO nano wire or a zinc oxide nano wire.

[0018] Optionally, the conductive via has a pore size ranging from 10 μm to 15 μm.

[0019] In a second aspect, the embodiments of the present application further provide a preparation method of a display module capable of being spliced, characterized by comprising:

[0020] A circuit board is provided, the circuit board comprises a first pad layer and a second pad layer arranged oppositely, and at least one circuit layer between the first pad layer and the second pad layer, an insulating layer is arranged between two adjacent layers of the first pad layer, the second pad layer and the at least one circuit layer, and the first pad layer, the second pad layer and the at least one circuit layer are electrically connected through a conductive via penetrating through the insulating layer.

[0021] a carrier substrate is provided, which is transparent;

[0022] a transparent die-bonding structure is formed on the carrier substrate for fixing an LED light-emitting wafer;

[0023] the LED light-emitting wafer is fixed on the die-bonding structure on the carrier substrate;

[0024] the carrier substrate is pressed against the circuit board, so that the LED light-emitting wafer is electrically connected to the first pad layer;

[0025] a driving module is fixed on the second pad layer, and the driving module is electrically connected to the second pad layer.

[0026] Optionally, the LED light-emitting wafer is a vertical wafer, and the transparent die-bonding structure for fixing the LED light-emitting wafer is formed on the carrier substrate, including:

[0027] a plurality of transparent die-bonding pads are formed on the carrier substrate;

[0028] conductive bumps are formed on at least one opposite side edge of the die-bonding pad, and the conductive bumps form a positioning groove.

[0029] Optionally, the conductive bumps are formed on at least one opposite side edge of the die-bonding pad, including:

[0030] the conductive bumps are formed on at least one opposite side edge of the die-bonding pad by printing.

[0031] Optionally, the first pad layer includes a plurality of first pads and a plurality of second pads, and the carrier substrate is pressed against the circuit board, including:

[0032] an anisotropic conductive adhesive is applied on one side of the carrier substrate provided with the die-bonding pad, and / or on one side of the circuit board provided with the first pad layer;

[0033] the carrier substrate is pressed against the circuit board, so that the first electrode of the vertical wafer is electrically connected to the corresponding first pad of the vertical wafer through the anisotropic conductive adhesive, and the bump is electrically connected to the corresponding second pad of the vertical wafer through the anisotropic conductive adhesive.

[0034] In a third aspect, an embodiment of the present application further provides a display device, which includes the splicable display module provided in the first aspect of the present application.

[0035] The splicable display module provided in this invention includes: a light-transmitting carrier substrate, a circuit board, a driving module, and multiple LED light-emitting chips. The circuit board includes a first pad layer and a second pad layer disposed opposite each other, and at least one circuit layer located between the first pad layer and the second pad layer. An insulating layer is disposed between adjacent layers of the first pad layer, the second pad layer, and the at least one circuit layer. The first pad layer, the second pad layer, and the at least one circuit layer are electrically connected through conductive vias penetrating the insulating layer. The LED light-emitting chips are disposed on the first pad layer and electrically connected to it. The driving module is disposed on the second pad layer and electrically connected to it. By disposing of the LED light-emitting chips and the driving module on opposite sides of the circuit board, there is no need to provide an area for fixing the driving module on the side of the circuit board where the LED light-emitting chips are disposed. That is, there is no area without LED light-emitting chips on the edge of this side. Consequently, in the spliced ​​display screen, there is no area without LED light-emitting chips at the splicing seam between two spliced ​​LED display modules, thereby reducing the pixel pitch at the splicing seam, improving the resolution of the display screen, and optimizing the display effect. The carrier substrate is provided with a light-transmitting die-bonding structure for fixing LED light-emitting chips. By pre-transferring the LED light-emitting chips to the die-bonding structure on the carrier substrate, and then pressing the carrier substrate carrying the LED light-emitting chips onto the circuit board, the efficiency and positional accuracy of fixing the LED light-emitting chips onto the circuit board are improved. Attached Figure Description

[0036] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments.

[0037] Figure 1 This is a schematic diagram of the structure of a splicable display module provided in Embodiment 1 of the present invention;

[0038] Figure 2 This is a schematic diagram of the structure of a splicable display module provided in Embodiment 2 of the present invention;

[0039] Figure 3 for Figure 2 Enlarged view of region A in the middle;

[0040] Figure 4 A schematic diagram of a vertical wafer structure provided in an embodiment of the present invention;

[0041] Figure 5 This is a schematic flowchart illustrating a method for fabricating a splicable display module according to Embodiment 3 of the present invention.

[0042] Figure 6 This is a schematic flowchart illustrating a method for fabricating a splicable display module according to Embodiment 4 of the present invention.

[0043] Figure 7 A schematic diagram of a circuit board structure is provided for an embodiment of the present application.

[0044] Figure 8 A schematic diagram of forming a die bonding pad on a carrier substrate is provided for an embodiment of the present application.

[0045] Figure 9 A schematic diagram of forming a conductive bump on the die bonding pad is provided for an embodiment of the present application.

[0046] Figure 10 A Figure 9 A top view of the conductive bump.

[0047] Figure 11 A schematic diagram of transferring the vertical wafer into the positioning groove is provided for an embodiment of the present application.

[0048] Figure 12 A schematic diagram of applying anisotropic conductive adhesive on the side of the carrier substrate provided with the die bonding pad is provided for an embodiment of the present application.

[0049] Figure 13 A schematic diagram of pressing the carrier substrate and the circuit board is provided for an embodiment of the present application.

[0050] Figure 14 A schematic diagram of fixing the driving module on the second pad layer is provided for an embodiment of the present application. DETAILED DESCRIPTION

[0051] In order to make the technical problems solved by the present application, the technical solutions adopted and the technical effects reached more clear, the technical solutions of the embodiments of the present application will be further described in detail below with reference to the drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0052] In the description of the present application, unless otherwise explicitly specified and limited, the terms "connected", "connected", "fixed" should be understood in a broad sense, for example, can be fixedly connected, or can be detachably connected, or integrated; can be mechanically connected, or electrically connected; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0053] In the present application, unless otherwise explicitly specified and limited, the first feature is "on" or "under" the second feature can include that the first and second features are in direct contact, or can include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, the first feature "on", "above" and "over" the second feature includes that the first feature is directly above and obliquely above the second feature, or only indicates that the first feature is higher in horizontal height than the second feature. The first feature "under", "below" and "underneath" the second feature includes that the first feature is directly below and obliquely below the second feature, or only indicates that the first feature is lower in horizontal height than the second feature. In addition, the terms "first", "second", are only used for differentiation in description, and have no special meaning.

[0054] As described above, in the existing spliced display screen, the splicing seam is too large at the splicing position, so that the pixel spacing of the local area at the splicing seam is too large, which affects the overall display effect of the display screen. The inventor has found that the existing LED display module usually sets the LED light emitting chip and the driving module on the same side of the circuit board, so that there is an area for fixing the driving module on the side of the circuit board, and the area is without the LED light emitting chip. In order to facilitate splicing, the area is usually set at the edge of the circuit board, so that when the display screen is spliced, there is an area without the LED light emitting chip between the splicing seams of the two LED display modules spliced with each other, so that the pixel spacing of the local area at the splicing seam is too large, which affects the overall display effect of the display screen.

[0055] Embodiment one

[0056] In view of the above problems, the embodiment one of the present application provides a splicable display module, Figure 1 The structure diagram of the splicable display module provided by the embodiment one of the present application is shown in Figure 1 As shown, the splicable display module comprises a circuit board 110, a driving module 120, and a plurality of LED light emitting chips 130 and a light-transmitting carrier substrate 140.

[0057] The circuit board 110 comprises a first pad layer and a second pad layer arranged oppositely, and at least one circuit layer between the first pad layer and the second pad layer, and an insulating layer is arranged between two adjacent layers of the first pad layer, the second pad layer and the at least one circuit layer. In the embodiment of the present application, the number of the circuit layer is not limited, and can be set according to the complexity of the circuit, for example, the more complex the circuit is, the more the number of the circuit layer can be. For example, in a specific embodiment of the present application, the circuit board 110 comprises a first pad layer 111, a first insulating layer 112, a first circuit layer 113, a second insulating layer 114, a second circuit layer 115, a third insulating layer 116 and a second pad layer 117 stacked in sequence.

[0058] The LED light emitting chip 130 is arranged on the first pad layer 111 and electrically connected with the first pad layer 111, and the driving module 120 is arranged on the second pad layer 117 and electrically connected with the second pad layer 117. The first pad layer 111, the second pad layer 117, the first circuit layer 113 and the second circuit layer 115 are electrically connected through the conductive via hole 118 penetrating the insulating layer, thereby realizing the electrical connection between the driving module 120 and the LED light emitting chip 130, so that the LED light emitting chip 130 can emit light in response to the driving signal emitted by the driving module 120. Specifically, the driving module 120 can include resistors, capacitors, memories and other components, which are not limited in the embodiments of the present application.

[0059] Specifically, in the above embodiment, the conductive via hole 118 is a hole penetrating the insulating layer, and the inner wall of the hole is provided with a conductive material, so that the two layers connected by the conductive via hole 118 are realized to be conductive. The conductive via hole 118 can connect two adjacent layers of the first pad layer 111, the second pad layer 117, the first circuit layer 113 and the second circuit layer 115, or can connect two non-adjacent layers of the first pad layer 111, the second pad layer 117, the first circuit layer 113 and the second circuit layer 115, which are not limited in the embodiments of the present application. It should be noted that the position and number of the conductive via hole 118 in the above embodiment are exemplary for illustrating the embodiments of the present application, but not limited. In other embodiments of the present application, the position and number of the conductive via hole 118 can be changed accordingly according to the needs of circuit design.

[0060] By arranging the LED light emitting chip 130 and the driving module 120 on the opposite sides of the circuit board 110, on the side of the circuit board 110 on which the LED light emitting chip 130 is arranged, there is no need to arrange an area for fixing the driving module 120, that is, there is no area without the LED light emitting chip 130 at the edge of the side, thereby in the display screen formed by splicing, there is no area without the LED light emitting chip 130 at the splicing seam between the two LED display modules spliced with each other, thereby reducing the pixel pitch at the splicing seam, improving the resolution of the display screen, and optimizing the display effect.

[0061] In addition, the first pad layer 111, the second pad layer 117, the first circuit layer 113 and the second circuit layer 115 are electrically connected through the conductive via hole 118 penetrating the insulating layer, without the need to wire from the side wall of the circuit board 110, thereby avoiding the problem that the side wall wiring is easy to break due to the need to bend.

[0062] The carrier substrate 140 can be a light-transmissive glass or polyimide, and the carrier substrate 140 is provided with a light-transmissive die fixing structure 141 for fixing the LED light-emitting wafer 130, and the LED light-emitting wafer 130 is fixed on the die fixing structure 141. Specifically, the die fixing structure 141 can be a limiting groove with a limiting function or an adsorbing pad with an adsorbing function, which is used to capture the LED light-emitting wafer 130 in the process of transferring the LED light-emitting wafer 130 to the carrier substrate 140, so that the LED light-emitting wafer 130 is fixed on the die fixing structure 141.

[0063] The LED light-emitting wafer 130 can be a Mini-LED or a Micro-LED. Since the size of the LED light-emitting wafer 130 is very small, if the LED light-emitting wafer 130 is fixed to the circuit board 110 one by one, the fixing efficiency will be very low. Therefore, in the embodiment of the present application, the LED light-emitting wafer 130 can be first transferred to the carrier substrate 140 in a large batch transfer manner, so that the LED light-emitting wafer 130 is fixed on the die fixing structure 141. Then, the carrier substrate 140 carrying the LED light-emitting wafer 130 is pressed and combined with the circuit board 110, so that the LED light-emitting wafer 130 is electrically connected with the first pad layer 111 on the circuit board 110, thereby improving the fixing efficiency and position accuracy of the LED light-emitting wafer 130. The light emitted by the LED light-emitting wafer 130 is emitted through the light-transmissive carrier substrate 140.

[0064] In the above embodiment, the type of the LED light-emitting wafer is not limited, which can be a normal wafer, a flip-chip wafer or a vertical wafer. Among them, the two electrodes of the normal wafer are located on the light-emitting surface of the LED light-emitting wafer, the two electrodes of the flip-chip wafer are located on the back surface opposite to the light-emitting surface of the LED light-emitting wafer, and the two electrodes of the vertical wafer are respectively located on the light-emitting surface and the back surface of the LED light-emitting wafer.

[0065] It should be noted that the circuit board in the embodiment of the present application is not limited to the commonly used printed circuit board (PCB), and in order to further improve the resolution and reduce the line width and line spacing, the circuit board can also include a glass substrate on which a circuit is printed, printed or etched, and the embodiment of the present application is not limited herein.

[0066] The display module provided by the embodiment of the present application comprises a light-transmitting carrier substrate, a circuit board, a driving module and a plurality of LED light-emitting chips. The circuit board comprises a first pad layer and a second pad layer arranged oppositely, and at least one circuit layer between the first pad layer and the second pad layer. An insulating layer is arranged between two adjacent layers of the first pad layer, the second pad layer and the at least one circuit layer. The first pad layer, the second pad layer and the at least one circuit layer are electrically connected through a conductive via penetrating the insulating layer. The LED light-emitting chips are arranged on the first pad layer and electrically connected with the first pad layer. The driving module is arranged on the second pad layer and electrically connected with the second pad layer. The carrier substrate is provided with a light-transmitting die-bonding structure for fixing the LED light-emitting chips, and the LED light-emitting chips are fixed on the die-bonding structure. By arranging the LED light-emitting chips and the driving module on the opposite sides of the circuit board, the side of the circuit board on which the LED light-emitting chips are arranged does not need to be provided with an area for fixing the driving module, i.e., the edge of the side does not have an area without LED light-emitting chips. Therefore, in the display screen formed by splicing, the splicing joint between the two LED display modules spliced with each other does not have an area without LED light-emitting chips, thereby reducing the pixel pitch at the splicing joint, improving the resolution of the display screen, optimizing the display effect. In addition, by transferring the LED light-emitting chips to the die-bonding structure on the carrier substrate in advance, and then pressing and combining the carrier substrate carrying the LED light-emitting chips with the circuit board, the efficiency and position accuracy of fixing the LED light-emitting chips to the circuit board are improved.

[0067] The highest precision of the current PCB is only 1.5 mil (38 μm), while the pad pitch of the LED light-emitting chip of the Mini LED display is only 50 μm below P1.0 (i.e., the pixel pitch is 1.0 mm) (especially below P0.5). Considering the material and process of the PCB itself, it is very difficult to further improve the precision. Therefore, in some embodiments of the present application, a glass substrate is used as the circuit board to improve the precision of the circuit and thereby improve the resolution.

[0068] Specifically, in the above embodiment, the first insulating layer 112, the second insulating layer 114 and the third insulating layer 116 in the circuit board 110 are glass. Since glass has good flatness, the first pad layer 111 and the second pad layer 117 can be formed on the first insulating layer 112 and the third insulating layer 116 respectively by evaporation, the first circuit layer 113 can be formed on the side of the first insulating layer 112 away from the first pad layer 111 or on the side of the second insulating layer 114 close to the first insulating layer 112 by inkjet printing, screen printing or the like, and the second circuit layer 115 can be formed on the side of the second insulating layer 114 close to the third insulating layer 116 or on the side of the third insulating layer 116 close to the second insulating layer 114 by inkjet printing, screen printing or the like. The adjacent insulating layers are bonded by pressing, and in a specific embodiment of the present application, the adjacent insulating layers are bonded by hot pressing of the adhesive, and the conductive via 118 connecting two or more of the first pad layer 111, the second pad layer 117, the first circuit layer 113 and the second circuit layer 115 penetrates the adhesive between the insulating layers.

[0069] In the above embodiment, the first circuit layer and the second circuit layer are located on the two sides of the second insulating layer respectively, and the first circuit layer and the second circuit layer are connected by the conductive via penetrating the insulating layer. In other embodiments of the present application, the first circuit layer is located on the side of the first insulating layer away from the first pad layer, the second circuit layer is located on the side of the second insulating layer close to the first insulating layer, and an adhesive layer is arranged between the first circuit layer and the second circuit layer, the adhesive layer is provided with a conductive via for connecting the first circuit layer and the second circuit layer, and the adhesive layer is used for bonding the first insulating layer and the second insulating layer. This scheme can reduce the number of holes punched on the glass, reduce the production cost, and the via on the adhesive layer between the first circuit layer and the second circuit layer can be formed by exposure and etching, improving the dimensional accuracy of the via.

[0070] The circuit in the first circuit layer 113 and the second circuit layer 115 is a nanosilver wire, a carbon nanotube, an ITO nanowire or a zinc oxide nanowire. Specifically, the precursor solution for forming the circuit can be printed on the glass by inkjet printing to form the required pattern, and then the glass including the pattern is subjected to heat treatment to sinter the liquid circuit into a solid circuit.

[0071] Since the insulating layer in the circuit board 110 is glass, the smallest hole diameter that can be obtained by the existing mechanical drilling method is 0.2 mm, which cannot meet the required accuracy, and mechanical drilling is prone to cause glass cracking. Therefore, in the embodiment of the present application, a laser drilling method is used to form the conductive via 118, and the hole diameter of the conductive via 118 ranges from 10 μm to 15 μm.

[0072] Embodiment Two

[0073] Figure 2 A structure diagram of a splicable display module provided in Embodiment Two of the present application, Figure 3 A structure diagram of a splicable display module provided in Embodiment Two of the present application, Figure 2 A structure diagram of a splicable display module provided in Embodiment Two of the present application, Figure 2 A structure diagram of a splicable display module provided in Embodiment Two of the present application, Figure 3 As shown in the drawings, in this embodiment, the splicable display module comprises a circuit board 210, a driving module 220, a plurality of LED light emitting chips 230 and a light-transmitting carrier substrate 240.

[0074] The circuit board 210 comprises a first pad layer 211, a first insulating layer 212, a first circuit layer 213, a second insulating layer 214, a second circuit layer 215, a third insulating layer 216 and a second pad layer 217 stacked in sequence.

[0075] The LED light emitting chips 230 are arranged on the first pad layer 211 and electrically connected with the first pad layer 211, and the driving module 220 is arranged on the second pad layer 217 and electrically connected with the second pad layer 217. The first pad layer 211, the second pad layer 217, the first circuit layer 213 and the second circuit layer 215 are electrically connected through conductive vias 218 penetrating the insulating layers, thereby realizing the electrical connection between the driving module 220 and the LED light emitting chips 230, so that the LED light emitting chips 230 can emit light in response to the driving signals emitted by the driving module 220. The conductive via 218 is a hole penetrating the insulating layer, and the inner wall of the hole is provided with a conductive material, so that the two layers connected by the conductive via 218 are realized to be conductive. In other embodiments of the present application, the first circuit layer is located on the side of the first insulating layer away from the first pad layer, the second circuit layer is located on the side of the second insulating layer close to the first insulating layer, and a gel layer is arranged between the first circuit layer and the second circuit layer, and the gel layer is provided with conductive vias for connecting the first circuit layer and the second circuit layer. The gel layer is also used for bonding the first insulating layer and the second insulating layer. This scheme can reduce the number of holes punched on the glass, reduce the production cost, and the vias on the gel layer between the first circuit layer and the second circuit layer can be formed by exposure and etching, thereby improving the dimensional accuracy of the vias.

[0076] The first insulating layer 212, the second insulating layer 214 and the third insulating layer 216 in the circuit board 210 are glass. The circuit in the circuit layer in the circuit board 210 is nanosilver wire, carbon nanotube, ITO nanowire or zinc oxide nanowire. The aperture range of the conductive via 218 is 10-15 μm.

[0077] The carrier substrate 240 can be light-transmissive glass or polyimide, and the carrier substrate 240 is provided with light-transmissive die-fixing structures 241 for fixing the LED light-emitting wafer 230, and the LED light-emitting wafer 230 is fixed on the die-fixing structures 241. Specifically, the die-fixing structures 241 can be limiting grooves with limiting effect or adsorbing pads with adsorbing effect, which are used to capture the LED light-emitting wafer 230 in the process of transferring the LED light-emitting wafer 230 to the carrier substrate 240, so that the LED light-emitting wafer 230 is fixed on the die-fixing structures 241.

[0078] The LED light-emitting wafer 230 can be a Mini-LED or a Micro-LED. Since the size of the LED light-emitting wafer 230 is very small, if the LED light-emitting wafer 230 is fixed to the circuit board 210 one by one, the fixing efficiency will be very low. Therefore, in the embodiment of the present application, the LED light-emitting wafer 230 is first transferred to the carrier substrate 240 in a large batch transfer manner, so that the LED light-emitting wafer 230 is fixed on the die-fixing structures 241. Then, the carrier substrate 240 carrying the LED light-emitting wafer 230 is attached to the circuit board 210, so that the LED light-emitting wafer 230 is electrically connected to the first pad layer 211 on the circuit board 210, thereby improving the fixing efficiency of the LED light-emitting wafer 230.

[0079] For example, in one embodiment of the present application, as shown in FIG. 2, the die-fixing structures 241 include positioning grooves formed by protrusions 2411 arranged on the carrier substrate 240, and the LED light-emitting wafer 230 is fixed in the positioning grooves. Figure 3 The protrusions 2411 forming the positioning grooves can be four, which are used to surround the LED light-emitting wafer 230 on all sides, or the protrusions 2411 forming the positioning grooves can be two oppositely arranged, which are used to surround the LED light-emitting wafer 230 on opposite sides. In the embodiment of the present application, the protrusions 2411 forming the positioning grooves are two oppositely arranged, and the present application is described based on this example. The positioning grooves can improve the position accuracy of the LED light-emitting wafer 230 on the carrier substrate 240, so that the carrier substrate 240 has higher position accuracy when being attached to the circuit board 210.

[0080] In the above embodiment, the type of the LED light-emitting wafer is not limited, which can be a normal wafer, a flip-chip wafer or a vertical wafer. In one embodiment of the present application, the LED light-emitting wafer 230 is a vertical wafer. The vertical wafer has a smaller size than the normal wafer and the flip-chip wafer, and the same area can be provided with more light-emitting wafers, that is, the pixel density (Pixels Per Inch, PPI) of the display module is improved. Figure 4A structure diagram of a vertical wafer is provided for an embodiment of the present application, the vertical wafer comprising a first electrode 231, a conductive layer 232, a distributed Bragg reflector layer 233, a P-type layer 234, a light-emitting layer 235 and an N-type layer 236 stacked in sequence.

[0081] Specifically, the first electrode 231 can be silver, the conductive layer 232 can be indium tin oxide (ITO), the distributed Bragg reflector layer 233 is a periodic structure composed of two materials with different refractive indexes arranged alternately, the optical thickness of each layer of material is 1 / 4 of the central reflection wavelength, and the reflectivity of the distributed Bragg reflector layer 233 can reach more than 99%, so that the light emitted by the light-emitting layer 235 is reflected and then emitted by the N-type layer 236, for improving the brightness of the LED. The P-type layer 234 can be P-type gallium nitride, the light-emitting layer 235 can be multi quantum well (MQW), and the N-type layer 236 can be N-type gallium nitride.

[0082] As shown in Figure 3 , the die bonding structure 241 further comprises a die bonding pad 2412 formed on the carrier substrate 240, and the protrusions 2411 are arranged on at least one opposite side edge of the die bonding pad 2412. In an exemplary embodiment of the present application, the protrusions 2411 are arranged on one opposite side edge of the die bonding pad 2412 as an example. Exemplarily, the first circuit layer 213, the second circuit layer 215 and the conductive via 218 are arranged appropriately, so that the die bonding pads 2412 in the same column or the same row are electrically connected, so that the LED light-emitting wafers in the same column or the same row are driven to emit light at the same time.

[0083] As shown in Figure 3 , the first pad layer 211 comprises a plurality of first pads 2111 and a plurality of second pads 2112, the first electrode 231 of the vertical wafer is electrically connected to the first pad 2111 corresponding to the vertical wafer, the die bonding pad 2412 serves as a second electrode of the vertical wafer, and the die bonding pad 2412 is electrically connected to the second pad 2112 corresponding to the vertical wafer.

[0084] Exemplarily, the protrusions 2411 are conductive protrusions, anisotropic conductive adhesive 250 is arranged between the circuit board 210 and the carrier substrate 240, the anisotropic conductive adhesive 250 has the characteristic of conducting in the vertical direction, the first electrode 231 of the vertical wafer is electrically connected to the first pad 2111 through the anisotropic conductive adhesive 250, the protrusions 2411 are electrically connected to the second pad 2112 through the anisotropic conductive adhesive 250, and thus the die bonding pad 2412 is electrically connected to the second pad 2112.

[0085] Exemplarily, as shown in Figure 3 and Figure 4As shown, in an embodiment of the present application, the sidewall of the vertical wafer is provided with an insulating protective layer 237. The insulating protective layer 237 is used to isolate each layer in the vertical wafer from the bump 2411, so as to avoid short circuit between the bump 2411 and each layer in the vertical wafer.

[0086] In some embodiments of the present application, since the insulating layer in the circuit board 210 is made of light-transmitting glass, in order to avoid the influence of the electronic elements on the display, the area other than the solder pad on the surface of the first insulating layer 212 in the circuit board 210 is coated with an ink layer (not shown in the figure) or other dark treatment, or the area other than the die bonding structure 241 on the surface of the carrier substrate 240 close to the circuit board 210 is coated with an ink layer (not shown in the figure) or other dark treatment, or a black light-transmitting glass substrate is used as the carrier substrate 240, which is used to shield the electronic elements on the circuit board 210, so as to avoid the influence of the electronic elements on the normal display, and meanwhile improve the contrast of the display device.

[0087] The display module provided by the embodiment of the present application is provided with LED light-emitting wafers and driving modules on the opposite sides of the circuit board, so that the side of the circuit board provided with the LED light-emitting wafers does not need to be provided with an area for fixing the driving modules, that is, the edge of the side does not have an area without LED light-emitting wafers, and thus in the display screen formed by splicing, the splicing joint between the two LED display modules spliced with each other does not have an area without LED light-emitting wafers, so as to reduce the pixel pitch at the splicing joint, improve the resolution of the display screen, and optimize the display effect. The glass substrate is used as the circuit board to improve the precision of the circuit, and thus improve the resolution. The LED light-emitting wafers are transferred to the appropriate positions on the carrier substrate in advance, and then the carrier substrate provided with the LED light-emitting wafers is attached to the circuit board, so as to improve the efficiency and position precision of the LED light-emitting wafers fixed to the circuit board.

[0088] Embodiment three

[0089] The embodiment three of the present application provides a preparation method of the display module, Figure 5 The flowchart of the preparation method of the display module provided by the embodiment three of the present application is shown in the figure, Figure 5 The method specifically includes the following steps:

[0090] S11, providing a circuit board.

[0091] Specifically, the circuit board comprises a first pad layer and a second pad layer arranged oppositely, and at least one circuit layer between the first pad layer and the second pad layer, an insulating layer is arranged between two adjacent layers of the first pad layer, the second pad layer and the at least one circuit layer, and the first pad layer, the second pad layer and the at least one circuit layer are electrically connected through a conductive via penetrating the insulating layer. Specifically, the structure of the circuit board can refer to the content recorded in the above embodiment one of the present application and Figure 1 The embodiment of the present application is not repeated here.

[0092] S12, providing a light-transmitting carrier substrate.

[0093] Specifically, the carrier substrate can be light-transmitting glass or polyimide.

[0094] S13, forming a light-transmitting die bonding structure for fixing the LED light emitting wafer on the carrier substrate.

[0095] Specifically, the light-transmitting die bonding structure for fixing the LED light emitting wafer can be formed on the carrier substrate by printing, and the die bonding structure can be a limiting groove with a limiting function or an adsorbing pad with an adsorbing function, which is used to capture the LED light emitting wafer during the process of transferring the LED light emitting wafer to the carrier substrate, so that the LED light emitting wafer is fixed on the die bonding structure. For example, the die bonding structure on the carrier substrate can refer to the content recorded in the above embodiment one of the present application and Figure 1 The embodiment of the present application is not repeated here.

[0096] S14, fixing the LED light emitting wafer on the die bonding structure on the carrier substrate.

[0097] Specifically, the LED light emitting wafer can be transferred to the carrier substrate by mass transfer or other methods, so that the LED light emitting wafer is fixed on the die bonding structure, and the specific transfer method is not limited in the embodiment of the present application.

[0098] S15, pressing the carrier substrate and the circuit board together to electrically connect the LED light emitting wafer and the first pad layer.

[0099] Specifically, the carrier substrate carrying the LED light emitting wafer is attached to the circuit board, so that the LED light emitting wafer is electrically connected to the first pad layer on the circuit board. The attachment method can be hot pressing, adhesion, etc., which is not limited in the embodiment of the present application.

[0100] S16, fixing the driving module on the second pad layer, and the driving module is electrically connected to the second pad layer.

[0101] Specifically, the driving module can be fixed on the second pad layer by welding, cementing or other methods, which is not limited in the embodiment of the present application. After the driving module is fixed, the driving module is electrically connected to the second pad layer.

[0102] After the above steps, the specific structure of the display module obtained can refer to the content described in the above embodiment one of the present application and Figure 1 , which will not be described here again in the embodiments of the present application.

[0103] It should be noted that the embodiments of the present application do not limit the specific order of the above steps, and in other embodiments of the present application, step S16 can be performed first, and then steps S12-S15 can be performed after the driving module is fixed on the second pad layer.

[0104] In the present embodiment, the type of LED light emitting wafer is not limited, which can be a positive wafer, a flip chip or a vertical wafer.

[0105] The preparation method of the splicable display module provided by the embodiments of the present application is to arrange the LED light emitting wafer and the driving module on the opposite sides of the circuit board, so that on the side of the circuit board where the LED light emitting wafer is arranged, there is no need to arrange an area for fixing the driving module, that is, there is no area without LED light emitting wafer at the edge of the side, and further, in the display screen formed by splicing, there is no area without LED light emitting wafer at the splicing seam between the two LED display modules spliced with each other, thereby reducing the pixel pitch at the splicing seam and improving the resolution and display effect of the display screen. By arranging the light-transmitting die bonding structure for fixing the LED light emitting wafer on the carrier substrate, the LED light emitting wafer is transferred to the die bonding structure on the carrier substrate in advance, and then the carrier substrate carrying the LED light emitting wafer is attached to the circuit board, thereby improving the efficiency and position accuracy of fixing the LED light emitting wafer to the circuit board.

[0106] Embodiment four

[0107] Figure 6 The flowchart of the preparation method of the splicable display module provided by the fourth embodiment of the present application is shown in Figure 6 , which specifically includes the following steps:

[0108] S21, providing a circuit board.

[0109] Figure 7 The structure diagram of the circuit board provided by the embodiments of the present application is shown in Figure 7As shown, the circuit board 310 comprises a first pad layer 311, a first insulating layer 312, a first circuit layer 313, a second insulating layer 314, a second circuit layer 315, a third insulating layer 316 and a second pad layer 317 stacked in sequence. The first pad layer 311, the second pad layer 317, the first circuit layer 313 and the second circuit layer 315 are electrically connected through conductive vias 318 penetrating the insulating layers. The conductive via 318 is a hole penetrating the insulating layer, and the inner wall of the hole is provided with a conductive material, so that the two or more layers connected by the conductive via 318 are in conduction.

[0110] The first insulating layer 312, the second insulating layer 314 and the third insulating layer 316 in the circuit board 310 are glass. The first pad layer 311 and the second pad layer 317 can be formed on the first insulating layer 312 and the third insulating layer 316 respectively by evaporation, the first circuit layer 313 can be formed on the side of the first insulating layer 312 away from the first pad layer 311 or the side of the second insulating layer 314 close to the first insulating layer 312 by inkjet printing, screen printing or the like, and the second circuit layer 315 can be formed on the side of the second insulating layer 314 close to the third insulating layer 316 or the side of the third insulating layer 316 close to the second insulating layer 314 by inkjet printing, screen printing or the like. The adjacent insulating layers are laminated by pressing.

[0111] The circuit in the first circuit layer 313 and the second circuit layer 315 is nanosilver wire, carbon nanotube, ITO nanowire or zinc oxide nanowire, etc. Specifically, the precursor liquid for forming the circuit can be printed on the glass by inkjet printing to form the required pattern, and then the glass including the pattern is subjected to heat treatment to sinter the liquid circuit into a solid circuit.

[0112] The conductive via 318 is formed by laser drilling, and the aperture range of the conductive via 318 is 10-15 μm.

[0113] The first pad layer 311 comprises a plurality of first pads 3111 and a plurality of second pads 3112.

[0114] S22, providing a carrier substrate which is transparent.

[0115] Specifically, the carrier substrate can be transparent glass or polyimide.

[0116] S23, forming a plurality of transparent die bonding pads on the carrier substrate.

[0117] Figure 8 The schematic diagram for forming the die bonding pad on the carrier substrate provided by the embodiment of the present application is as follows: Figure 8As shown, a plurality of array-distributed light-transmissive die-bonding pads 3412 can be formed on the carrier substrate 340 by evaporation, and the die-bonding pads 3412 can be a light-transmissive ITO layer.

[0118] S24, forming conductive bumps on the edges of at least one opposite side of the die-bonding pad, the conductive bumps forming a positioning groove.

[0119] Figure 9 A schematic diagram of forming conductive bumps on the die-bonding pad according to an embodiment of the present application is shown in FIG. 6. Figure 10 As shown in FIG. 6, the conductive bumps 3411 are formed on the edges of at least one opposite side of the die-bonding pad 3412 by inkjet printing, thereby forming a positioning groove. Figure 9 As shown in FIG. 6, the conductive bumps 3411 are formed on the edges of at least one opposite side of the die-bonding pad 3412 by inkjet printing, thereby forming a positioning groove. Figure 9 As shown in FIG. 6, the conductive bumps 3411 are formed on the edges of at least one opposite side of the die-bonding pad 3412 by inkjet printing, thereby forming a positioning groove. Figure 10 As shown in FIG. 6, the conductive bumps 3411 are formed on the edges of at least one opposite side of the die-bonding pad 3412 by inkjet printing, thereby forming a positioning groove. The positioning groove can improve the position accuracy of the LED light-emitting wafer 330 on the carrier substrate 340, so that the carrier substrate 340 has higher position accuracy when being pressed against the circuit board 310.

[0120] Further, after step S25, the surface of the first insulating layer 312 in the circuit board 310 can be coated with an ink layer (not shown in the figure) or other dark treatment outside the pads, or the surface of the carrier substrate 340 provided with the die-bonding pads 3412 can be coated with an ink layer (not shown in the figure) or other dark treatment outside the die-bonding pads 3412, or a black light-transmissive glass substrate is used as the carrier substrate 340 to shield the electronic elements on the circuit board 310 and avoid affecting normal display, while improving the contrast of the display device.

[0121] S25, transferring the vertical wafer into the positioning groove.

[0122] Figure 11 A schematic diagram of transferring the vertical wafer into the positioning groove according to an embodiment of the present application is shown in FIG. 7. Figure 11 As shown in FIG. 7, a plurality of vertical wafers 330 are transferred onto the carrier substrate 340 at one time by the mass transfer device M, wherein each vertical wafer 330 is fixed in a corresponding positioning groove. The vertical wafer 330 includes a first electrode, a conductive layer, a distributed Bragg reflector, a P-type layer, a light-emitting layer, and an N-type layer stacked in sequence. The specific structure of the vertical wafer can refer to the aforementioned embodiment two and Figure 4 When the vertical wafer 330 is fixed in the positioning groove, the N-type layer of the vertical wafer 330 is in contact with and electrically connected to the die-bonding pad 3412 on the carrier substrate 340.

[0123] The mass transfer device M in this embodiment of the invention has an adsorption plate with multiple adsorption positions, each of which can adsorb one vertical wafer 330. During the transfer process, multiple vertical wafers 330 are first adsorbed onto the adsorption plate. Then, the adsorption plate is moved to a predetermined position above the carrier substrate 340, and the vertical wafers 330 are released, causing them to fall into the positioning groove formed by the conductive protrusions 3411.

[0124] It should be noted that the mass transfer device in the embodiments of the present invention can adsorb vertical wafers by means of electrostatic adsorption, magnetic adsorption or negative pressure adsorption, and the embodiments of the present invention are not limited thereto.

[0125] S26. Apply anisotropic conductive adhesive to the side of the carrier substrate where the die-bonding pads are located.

[0126] Specifically, anisotropic conductive adhesive is applied to the side of the carrier substrate where the die-bonding pads are located, or anisotropic conductive adhesive is applied to the side of the circuit board where the first pad layer is located, or anisotropic conductive adhesive is applied to both the side of the carrier substrate where the die-bonding pads are located and the side of the circuit board where the first pad layer is located. This embodiment of the invention is not limited here. Figure 12 This is a schematic diagram illustrating the application of anisotropic conductive adhesive to one side of a carrier substrate with die-bonding pads, as provided in an embodiment of the present invention. For example,... Figure 12 As shown, anisotropic conductive adhesive 350 is coated on one side of the carrier substrate 340 where the die bonding pad 3412 is provided, and the anisotropic conductive adhesive 350 covers the upper surface of the vertical wafer 330.

[0127] S27. Press the carrier substrate and the circuit board together.

[0128] Specifically, the carrier substrate and the circuit board are bonded together by hot pressing. The hot pressing process parameters are: heating conditions of 100℃-120℃, pressing time of 1s-2s, and pressing pressure of 8kg / mm². 2 -12kg / mm 2 . Figure 13 This is a schematic diagram of pressing a carrier substrate and a circuit board together, provided in an embodiment of the present invention. Figure 13 As shown, the anisotropic conductive adhesive 350 has the characteristic of being conductive in the vertical direction. After lamination, the first electrode of the vertical wafer 330 is electrically connected to the first pad 3111 corresponding to the vertical wafer 330 through the anisotropic conductive adhesive 350, and the conductive protrusion 3411 is electrically connected to the second pad 3112 corresponding to the vertical wafer 330 through the anisotropic conductive adhesive 350, thereby making the die bonding pad 3412 electrically connected to the second pad 3112. Specifically, the specific connection structure between the vertical wafer and the first pad and the second pad can be referred to the aforementioned embodiment two of the present invention. Figure 3The embodiments of the present application are not described here.

[0129] S28, the driving module is fixed on the second pad layer, and the driving module is electrically connected with the second pad layer.

[0130] Specifically, the driving module can be fixed on the second pad layer by welding, cementing or the like. After the driving module is fixed, the driving module is electrically connected with the second pad layer. Figure 14 The schematic diagram of fixing the driving module on the second pad layer provided by the embodiments of the present application is shown in FIG. 3. Figure 14 As shown in FIG. 3, the second pad layer 317 can include a plurality of pads, and the driving module 320 is fixed on one or more pads and is electrically connected with the one or more pads, so that the driving module 320 can send a driving signal to the vertical wafer 330 through the circuit board 310, and then light up the vertical wafer 330. The other pads of the second pad layer 317 can be used as an interface with an external circuit, for connecting an external power supply and a data signal.

[0131] The preparation method of the splicable display module provided by the embodiments of the present application can set the LED light-emitting wafer and the driving module on the opposite sides of the circuit board. Thus, on the side of the circuit board where the LED light-emitting wafer is arranged, there is no need to set a region for fixing the driving module, i.e., the edge of the side does not exist a region without the LED light-emitting wafer. Thus, in the display screen formed by splicing, there is no region without the LED light-emitting wafer at the splicing joint between the two LED display modules spliced with each other, thereby reducing the pixel pitch at the splicing joint and improving the resolution and display effect of the display screen. The glass substrate is used as the circuit board to improve the precision of the circuit and thus improve the resolution. The fixed crystal pad is formed on the carrier substrate, the conductive protrusion is formed on the fixed crystal pad, and the conductive protrusion forms the positioning groove, which can improve the position precision of the LED light-emitting wafer on the carrier substrate, so that the carrier substrate has higher position precision when being pressed against the circuit board.

[0132] The display device is formed by splicing a plurality of the splicable display modules. Since the LED light emitting chips and the driving modules are arranged on opposite sides of the circuit board, the side of the circuit board on which the LED light emitting chips are arranged does not need to be provided with an area for fixing the driving modules, that is, the edge of the side does not have an area without LED light emitting chips. Therefore, in the display screen formed by splicing, the splicing joint between the two LED display modules spliced with each other does not have an area without LED light emitting chips, so that the pixel pitch at the splicing joint is reduced, the resolution of the display screen is improved, and the display effect is optimized. In addition, the LED light emitting chips are transferred to the die bonding structure on the carrier substrate in advance, and then the carrier substrate carrying the LED light emitting chips is attached to the circuit board, so that the efficiency and position accuracy of fixing the LED light emitting chips to the circuit board are improved.

[0133] In the description herein, it should be understood that the terms "upper", "lower", "left", "right", and the like orientation or position relationship are based on the orientation or position relationship shown in the drawings, and are only for the convenience of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0134] In the description of the present specification, the description referring to the terms "an embodiment", "an example", and the like means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example.

[0135] In addition, it should be understood that although the present specification is described in terms of embodiments, each embodiment does not necessarily contain only one independent technical solution, and the description of the specification is only for the sake of clarity, and those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can be appropriately combined to form other embodiments that those skilled in the art can understand.

[0136] The technical principles of the present application are described above in combination with specific embodiments. These descriptions are only for the purpose of explaining the principles of the present application, and cannot be interpreted in any way as a limitation on the scope of protection of the present application. Based on the explanations herein, those skilled in the art can think of other specific embodiments of the present application without creative labor, and these embodiments will fall within the scope of protection of the present application.

Claims

1. A display module that is splicable, characterized by, The application relates to a light-emitting diode (LED) display panel, which comprises a light-transmitting carrier substrate, a circuit board, a driving module and a plurality of LED light-emitting chips. The circuit board comprises oppositely arranged first and second pad layers and at least one circuit layer between the first and second pad layers, insulating layers are arranged between two adjacent layers of the first and second pad layers and the at least one circuit layer, and the first and second pad layers and the at least one circuit layer are electrically connected through conductive vias penetrating through the insulating layers. The LED light-emitting chips are arranged on the first pad layer and electrically connected with the first pad layer, and the driving module is arranged on the second pad layer and electrically connected with the second pad layer. The carrier substrate is provided with light-transmitting die-bonding structures for fixing the LED light-emitting chips, and the LED light-emitting chips are fixed on the die-bonding structures. The die-bonding structures comprise positioning grooves formed by protrusions arranged on the carrier substrate, the LED light-emitting chips are vertical chips, the first pad layer comprises a plurality of first pads and a plurality of second pads, the protrusions are conductive protrusions, anisotropic conductive adhesive is arranged between the circuit board and the carrier substrate, the first electrode of the vertical chip is electrically connected with the first pad through the anisotropic conductive adhesive, and the protrusions are electrically connected with the second pads through the anisotropic conductive adhesive. The LED light-emitting chips are fixed in the positioning grooves.

2. The tileable display module of claim 1, wherein, The die-bonding structures further comprise die-bonding pads formed on the carrier substrate, and the protrusions are arranged on at least one side edge of the die-bonding pads.

3. The tileable display module of claim 2, wherein, The first electrode of the vertical chip is electrically connected with the corresponding first pad of the vertical chip, the die-bonding pad serves as the second electrode of the vertical chip, and the die-bonding pad is electrically connected with the corresponding second pad of the vertical chip. The vertical chip comprises a first electrode, a conductive layer, a distributed Bragg reflector, a P-type layer, a light-emitting layer and an N-type layer which are sequentially stacked.

4. The tileable display module of claim 1, wherein, The side wall of the vertical chip is provided with an insulating protective layer.

5. The tileable display module of claim 1, wherein, The circuit board comprises a first pad layer, a first insulating layer, a first circuit layer, a second insulating layer, a second circuit layer, a third insulating layer and a second pad layer which are sequentially arranged.

6. The tileable display module of any of claims 1-5, wherein, An ink layer is coated on the surface of the carrier substrate close to the circuit board or on the surface of the carrier substrate close to the die-bonding structures. The insulating layer is glass, and the circuit in the circuit layer is a nano silver wire, a carbon nanotube, an ITO nano wire or a zinc oxide nano wire.

7. The tileable display module of claim 6, wherein, The aperture of the conductive via ranges from 10 mu m to 15 mu m.

8. The tileable display module of claim 1, wherein, The application further relates to a method for manufacturing the LED display panel, which comprises the following steps: providing a circuit board, the circuit board comprising oppositely arranged first and second pad layers and at least one circuit layer between the first and second pad layers, insulating layers being arranged between two adjacent layers of the first and second pad layers and the at least one circuit layer, and the first and second pad layers and the at least one circuit layer being electrically connected through conductive vias penetrating through the insulating layers; providing a light-transmitting carrier substrate; 9. A method of manufacturing a display module that can be tiled, characterized by, ​ ​ ​ forming light-transmissive die-bonding structures on the carrier substrate for fixing LED light-emitting dies; fixing the LED light-emitting dies on the die-bonding structures on the carrier substrate; pressing the carrier substrate and the circuit board to electrically connect the LED light-emitting dies and the first pad layer; fixing a driving module on the second pad layer, the driving module being electrically connected with the second pad layer; the LED light-emitting dies are vertical dies, and forming light-transmissive die-bonding structures on the carrier substrate for fixing LED light-emitting dies comprises: forming a plurality of light-transmissive die-bonding pads on the carrier substrate; forming conductive protrusions on at least one opposite side edge of the die-bonding pads, the conductive protrusions forming positioning grooves; the first pad layer comprises a plurality of first pads and a plurality of second pads, and pressing the carrier substrate and the circuit board comprises: applying anisotropic conductive adhesive on one side of the carrier substrate provided with the die-bonding pads and / or on one side of the circuit board provided with the first pad layer; pressing the carrier substrate and the circuit board to electrically connect the first electrode of the vertical dies and the corresponding first pad through the anisotropic conductive adhesive, and to electrically connect the protrusions and the corresponding second pad through the anisotropic conductive adhesive.

10. The method of claim 9, wherein the method further comprises: forming conductive protrusions on at least one opposite side edge of the die-bonding pads comprises: forming the conductive protrusions on at least one opposite side edge of the die-bonding pads by printing.

11. A display device, characterized by comprising: a splicable display module as claimed in any one of claims 1-8.

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