Chiral molecule identification system and method based on frustrated total internal reflection light spin hall effect
By utilizing the suppressed total internal reflection optical spin Hall effect to enhance and split the optical spin Hall effect, the chiral molecule identification system overcomes the limitations of existing chiral molecule detection technologies, achieving efficient and quantitative identification of chiral molecule types.
Patent Information
- Application Number
- CN202110934608.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-08-16
- Publication Date
- 2025-12-19
- Estimated Expiration
- 2041-08-16
AI Technical Summary
Existing chiral molecule detection technologies have limitations; they cannot efficiently and quantitatively detect chiral molecules, and may react chemically with the sample, leading to its destruction.
A chiral molecule identification system based on the suppressed total internal reflection optical spin Hall effect is adopted, which includes a pre-selection optical path, an enhancement chip structure, a post-selection optical path, and an electrically coupled element CCD. By enhancing and splitting the spin Hall effect, and combining the chiral molecule solution in a standard cuvette, the system uses the optical spin shift value for identification.
It enables efficient and quantitative detection of chiral molecules, improves detection sensitivity and accuracy, and can accurately identify the types of chiral molecules.
Smart Images
Figure CN114509410B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the field of material identification, and particularly relates to a chiral molecule identification system and method based on frustrated total internal reflection light spin Hall effect. BACKGROUND
[0002] Chirality refers to the property of an object that cannot coincide with its mirror image, and the mirror image of a chiral substance is called a chiral enantiomer. Chiral molecules refer to molecules that cannot coincide with their mirror images and have certain configurations or conformations. Chiral molecules exist widely in nature and living organisms and play an important role in the research fields of pharmacology, chemical synthesis and life science. Since left-handed molecules and right-handed molecules have common chemical and physical properties, it is difficult to detect them. Existing chiral analysis techniques mainly include piezoelectric and optical gas sensors, chemical microscopes, immunosensors, fluorescence sensors, etc. However, these techniques have their own limitations, such as being able to detect only gaseous substances, being unable to quantitatively describe, and being able to chemically react with samples and thus destroy the samples. With the development of technology, optical rotation has become one of the most useful tools for detecting the configuration of chiral molecules. Optical rotation refers to the phenomenon that the polarization plane is deflected when linearly polarized light passes through a chiral molecule medium. Specific rotation is a physical property, and the specific rotation of different optically active substances is generally different. The specific rotation of left-handed substances is negative, and the specific rotation of right-handed substances is positive. Optical spin Hall effect is the phenomenon that left-handed and right-handed circularly polarized light in a light beam separates. If the polarization plane is deflected, the spin transverse migration of the optical spin Hall effect will change. Therefore, the optical spin Hall effect can be applied to the detection of chiral molecules. SUMMARY
[0003] In view of the above problems in the prior art, the present application provides a chiral molecule identification system and method based on frustrated total internal reflection light spin Hall effect.
[0004] In order to achieve the above-mentioned purposes, the technical scheme adopted by the present application is as follows:
[0005] A chiral molecule identification system based on frustrated total internal reflection light spin Hall effect, comprising, in sequence, a pre-selection light path, an enhanced chip structure, a post-selection light path, and a charge-coupled device (CCD) element.
[0006] The pre-selection light path is used to adjust the light intensity of the reflected light beam within the receiving signal bearing range of the CCD element.
[0007] The enhanced chip structure is used to enhance the optical spin Hall effect of the reflected light beam.
[0008] The post-selection light path is used to amplify the spin splitting of the light beam after reflection by the enhanced chip structure and to collimate the reflected light.
[0009] The electric coupling element CCD is used for positioning the light spot and reading the data of received light intensity;
[0010] A standard cuvette is arranged between the pre-selection optical path and the enhanced chip structure, and the standard cuvette contains a solution of chiral molecules of a sample to be tested.
[0011] The above scheme has the beneficial effect of enhancing the optical spin Hall effect, so that the CCD can capture the light spot and read out the spin transverse value.
[0012] Further, the pre-selection optical path comprises, in sequence, a He-Ne laser, a half-wave plate, a short-focal-length plano-convex lens, and a first Glan polarizer;
[0013] The He-Ne laser emits a light beam, and the half-wave plate is used to adjust the intensity of the incident light beam, so as to ensure that the received signal of the electric coupling element CCD is within its bearing range;
[0014] The short-focal-length plano-convex lens is used to shrink the incident light beam;
[0015] The first Glan polarizer is used to select the polarization state of the light beam emitted by the short-focal-length plano-convex lens.
[0016] Further, the post-selection optical path comprises, in sequence, a second Glan polarizer and a long-focal-length plano-convex lens, wherein,
[0017] The second Glan polarizer is used to cause the left and right circularly polarized light after reflection by the enhanced chip structure to interfere destructively, and to amplify the spin splitting of the optical spin Hall effect;
[0018] The long-focal-length plano-convex lens is used to collimate the light beam passing through the second Glan polarizer and form a confocal cavity with the short-focal-length plano-convex lens.
[0019] Further, when the system is in operation, the He-Ne laser emits a light beam, the half-wave plate adjusts the intensity of the incident light, the short-focal-length plano-convex lens shrinks the light beam, the first Glan polarizer selects the polarization state of the light beam, the light beam passes through the solution of chiral molecules in the standard cuvette and is polarized, the light beam is split after reflection by the enhanced chip structure, the left and right circularly polarized light after splitting interferes destructively through the second Glan polarizer, and the collimated light beam after passing through the long-focal-length plano-convex lens is irradiated onto the electric coupling element CCD, and the electric coupling element positions the light spot and reads the data, so as to analyze the material composition in the solution of chiral molecules.
[0020] A chiral molecule identification method based on the optical spin Hall effect of frustrated total reflection is also proposed, comprising the following steps:
[0021] S1, construct a chiral molecule identification system based on the optical spin Hall effect of frustrated total reflection, and read the spin transverse data;
[0022] S2, calculate the optical spin transverse value in the optical intensity data read in step S1, and solve the optical rotation angle according to the optical spin transverse value;
[0023] S3, solve the specific rotation of the chiral molecule solution according to the optical rotation angle calculated in step S2, and obtain the category of the corresponding molecular material according to the calculated specific rotation of the chiral molecule solution.
[0024] The beneficial effect of the above scheme is that the type of chiral molecule is calculated by the spin transverse value. This method can be used for identification of all chiral molecule solutions.
[0025] Further, the step S1 specifically comprises:
[0026] S11, determine the concentration of chiral molecule solution in the cuvette and enhance the chip structure according to different materials;
[0027] S12, emit a laser beam from the pre-selection light path, reflect through the enhanced chip structure after passing through the chiral molecule solution in the standard cuvette, and irradiate on the CCD through the post-selection light path;
[0028] S13, use the CCD to position the irradiation spot and read the optical intensity data.
[0029] Further, the optical spin transverse value in step S2 is expressed as:
[0030] ;
[0031] Wherein, z 、 delta 、 k 0、 w 0 is a constant, a is the optical rotation angle, is the ratio of the reflection coefficients of S wave and P wave of the enhanced chip structure, and The value range of is 50-60.
[0032] Further, the calculation method of the specific rotation of the chiral molecule solution in step S3 is:
[0033] a = a s *lc ;
[0034] Wherein, a s is the specific rotation of the chiral molecule solution, l is the length of the standard cuvette, cis the concentration of the sample solution to be measured.
[0035] The above further scheme has the beneficial effect that according to the magnitude of the specific rotation of the chiral molecule, a suitable solution concentration can be selected to measure the chiral molecule solution, thereby improving the sensitivity of detection and making the detection result more accurate. BRIEF DESCRIPTION OF DRAWINGS
[0036] Figure 1 It is a schematic diagram of the chiral molecule identification method based on the light spin Hall effect of frustrated total reflection of the present application.
[0037] Figure 2 It is a schematic diagram of the chiral molecule identification method based on the light spin Hall effect of frustrated total reflection of the present application.
[0038] Figure 3 It is a schematic diagram of the change relationship between the light beam spin transverse migration and the incident angle of the present application. eta
[0039] Figure 4 It is a schematic diagram of the change relationship between the light beam spin transverse migration and the incident angle of the present application. eta
[0040] (a) is a change relationship between the light beam spin transverse migration and the incident angle of the present application.
[0041] (b) is a change relationship between the light beam spin transverse migration and the incident angle of the present application. eta
[0042] (c) is a change relationship between the light beam spin transverse migration and the incident angle of the present application. eta
[0043] (d) is a change relationship between the light beam spin transverse migration and the incident angle of the present application. eta
[0044] Figure 5 (a) is a schematic diagram of the TiO2 (Al2O3Si Al2O3) chip structure of the present application, 4 (b) is a schematic diagram of the change relationship between the reflection coefficient of S wave and P wave and the incident angle in the TiO2 chip structure of the present application. Figure 5 4
[0045] Figure 6 (a) is a schematic diagram of the Al2O3 (SiO2TiO2SiO2) chip structure of the present application, 7 Figure 6 (b) is Al2O3 (SiO2 TiO2 SiO2) 7 The schematic diagram of the relationship between the reflection coefficient of S wave and P wave in the chip structure and the incident angle.
[0046] Figure 7 (a) is SF of the embodiment of the present application 11 (MgF2 TiO2 MgF2) 6 SF 11 The schematic diagram of the chip structure, Figure 7 (b) is SF 11 (MgF2 TiO2 MgF2) 6 SF 11 The schematic diagram of the relationship between the reflection coefficient of S wave and P wave in the chip structure and the incident angle.
[0047] Figure 8 The curve of the spin transverse of the chiral solution of different concentrations and the specific rotatory power when the incident angle is 60°. DETAILED DESCRIPTION
[0048] The specific embodiments of the present application are described below to facilitate the understanding of the present application for those skilled in the art, but it should be clear that the present application is not limited to the scope of the specific embodiments, and for those skilled in the art, it is obvious that all the changes within the spirit and scope of the present application defined and determined by the appended claims are obvious, and all the inventions utilizing the concept of the present application are within the scope of protection.
[0049] Embodiment 1
[0050] A chiral molecule identification system based on frustrated total reflection optical spin Hall effect, which sequentially includes a front selection light path, an enhanced chip structure, a rear selection light path and an electric coupling element CCD in the optical path;
[0051] The front selection light path is used to adjust the reflected light beam intensity in the receiving signal bearing range of the electric coupling element CCD;
[0052] The enhanced chip structure is used to enhance the optical spin Hall effect of the reflected light beam;
[0053] The rear selection light path is used to amplify the spin splitting of the light beam after being reflected by the enhanced chip structure and to collimate the reflected light;
[0054] The electric coupling element CCD is used to position the light spot and read the data of the received light intensity;
[0055] A standard cuvette is placed between the front selection light path and the enhanced chip structure, and the standard cuvette contains a chiral molecule solution of a sample to be tested.
[0056] Specifically, as shown in Figure 1 , the He-Ne laser emits a light beam, and the HWP is a half-wave plate placed in the front selection light path, which is used to adjust the reflected light intensity and ensure that the received signal of the CCD is within the acceptable range. The light beam then passes through a 100 mm short focal length plano-convex lens L1 to shrink the incident light, and a first Glan polarizer P1 is used to select the polarization state of the light beam, which is the front selection device part of the weak measurement light path. The CS is a standard cuvette used to hold the chiral molecule solution, and the refractive index of the selected standard cuvette is 1, which is consistent with the refractive index of air. After the light beam passes through the chiral molecule solution, the polarization plane of the light beam will be deflected. The photonic crystal in the enhanced chip structure produces a reflected light spin Hall effect, and at this time the system is coupled with the measuring instrument. The rear selection device part includes two optical elements: a second Glan polarizer and a 250 mm long focal length plano-convex lens. The second Glan polarizer P2 is used to cause the left and right circularly polarized light after splitting to interfere destructively, significantly amplifying the spin splitting. The long focal length plano-convex lens L2 is used to collimate the experimental light path and form a confocal cavity with lens L1. The charge-coupled device CCD is used to position the light spot, receive the light intensity, and read the data.
[0057] Example 2
[0058] A chiral molecule discrimination method based on the light spin Hall effect of frustrated total reflection, as shown in Figure 2 , comprises the following steps:
[0059] S1, constructing a chiral molecule discrimination system based on the light spin Hall effect of frustrated total reflection, and reading the light intensity data;
[0060] In this embodiment, the discrimination system constructed in Example 1 is used, and the specific method is as follows:
[0061] S11, determining the concentration of chiral molecule solution in the labeled cuvette and the enhanced chip structure according to different materials;
[0062] As shown in Figure 3 , the spin transverse migration of the light beam changes with the ratio of the reflection coefficients of the S wave and the P wave of the enhanced chip structure eta The curves from top to bottom represent the specific rotations of different substances, with a range of 10°-90° arranged in an arithmetic sequence. Figure 3 From the above, it can be seen that eta , when the value is from 0 to 2000, the spin transverse migration is not a linear relationship, eta The larger the value, the smaller the spin transverse migration interval of different substances, and the sensitivity is naturally lower. eta When the value of etaThe spin rotation is plotted as a function of the angle of incidence in the range 0-200 eta to determine the optimal parameters.
[0063] As shown in Figure 4 , wherein, Figure 4 the curves from top to bottom in Figure d represent different specific rotatory powers a, with the value range being 10°-90° in turn, with an equal difference of 10°, from Figure 4 It can be seen from (a)-(d) that when the angle of incidence is 70°, the spin rotation curve distribution of the substance with a specific rotatory power greater than 60° is too close, which is not conducive to sensor design. When the angle of incidence is 60°, it can be seen from Figure 4 (a) and (c) that whether the chiral molecule is left-handed or right-handed, the curve distribution of the spin rotation is relatively uniform, which is more conducive to sensing. According to the simulation calculation, the curve distribution gradually changes from uniform to dense, and considering the fault tolerance of the experiment, we finally determine that the range of the angle of incidence is between 60° and 70°. From Figure 4 (a) and (c), it can be seen that when the angle of incidence is 30°, eta when the specific rotatory power is less than 60°, the spin rotation curve of the substance is basically a straight line, and when the specific rotatory power is greater, the spin rotation curve decreases with the increase of eta Considering the universality of the selected eta , we finally determine that the value range of η is between 50 and 60.
[0064] How to realize eta the value range of η is between 50 and 60 is the problem we will solve next.
[0065] (1)
[0066] wherein r ssm , r ppm represent the reflection coefficients of S waves and P waves, , respectively. To meet the value range of eta , the simplest method is to let the molecule be equal to 1, and then adjust the value of r ppm to meet our needs. If , It can be found that r ppm is a number tending to 0, and r ssm is a number tending to 1.
[0067] Therefore, in the design 3 of the embodiment, the chip structure is enhanced to meet the above requirements,
[0068] First, we choose TiO2, Si and Al2O3 as the three materials.
[0069] Second, we choose TiO2, SiO2 and Al2O3 as the three materials.
[0070] Third, we choose MgF2, TiO2 and SF 11 as the three materials.
[0071] The first structure is shown in Figure 5 (a). We choose TiO2, Si and Al2O3 as the three materials to design the chip. At the wavelength of 632.8 nm, the refractive indices of TiO2, Si and Al2O3 are 2.5837, 3.8837 and 1.7660, respectively. After simulation, the optimal low refractive index medium thickness of this structure is 90 nm, and the optimal period number of the structure is 4. From Figure 5 (b), we can see that when the incident angle is 66.9°, r ssm = 1, r ppm = 0.01858. r ssm and r ppm are just within the specified range, and at this time eta = 53.82, which meets the original design.
[0072] The second structure is shown in Figure 6 (a). We choose TiO2, SiO2 and Al2O3 as the three materials to design the chip. At the wavelength of 632.8 nm, the refractive indices of TiO2, SiO2 and Al2O3 are 2.5837, 1.4570 and 1.7660, respectively. After simulation, the optimal low refractive index medium thickness of this structure is 100 nm, and the optimal period number of the structure is 7. From Figure 6 (b), we can see that when the incident angle is 60°, r ssm = 1, r ppm = 0.0168. r ssm and r ppm are just within the specified range, and at this time eta = 59.5238, which meets the original design
[0073] The third structure is shown in Figure 7 (a). We choose MgF2, TiO2 and SF 11The three materials are used to design the chip. The refractive indexes of MgF2, TiO2 and SF 11 at the wavelength of 632.8 nm are 2.3800, 2.5837 and 1.7786 respectively. Through simulation calculation, the optimal low refractive index medium thickness of the structure is 110 nm, and the optimal period number of the structure is 6. Figure 7 (b) It can be seen that when the incident angle is 61.8°, r ssm =1, r ppm = 0.01903. r ssm and r ppm The value of eta =52.55, which meets the design intention.
[0074] According to the above analysis, we can design the chip structure meeting our requirements by adjusting the refractive index of the material, the period number, the incident angle, the low refractive index medium thickness, etc. The principle of the designed structure has higher universality.
[0075] The spin drift of the chiral molecule optical spin Hall effect is related to the concentration of the chiral molecule, so it is necessary to determine the optimal solution concentration. As shown in Figure 8 , when the concentration of the substance is relatively small, the spin drift of the chiral solution is linearly related to the specific rotatory power of the substance, but the spin drift value is small. When the concentration of the chiral solution is relatively large, the spin drift of the chiral solution is linearly related to the specific rotatory power of the substance only in part of the chiral substance, and the spin drift value changes little in the substance with large specific rotatory power, at this time the sensitivity is low. Therefore, in order to balance the linearity and high sensitivity, the optimal concentration for all substances is selected as 3 mg / ml, and the sensitivity at this time is 3.70 μm / deg. According to different ranges of specific rotatory power, we can select the optimal solution concentration, for example, when the specific rotatory power of the substance is in the range of -30<alphas<30, the optimal concentration of the solution is 7 mg / ml, and the sensing sensitivity at this time is 9.22 μm / deg.
[0076] S12, emitting a laser beam by the pre-selection light path, reflecting through the enhanced chip structure after passing through the chiral molecule solution in the standard cuvette, and irradiating onto the electrically coupled element CCD through the post-selection light path;
[0077] Considering that the incident light beam is a H-polarization state Gaussian beam, when the light beam passes through the chiral molecule solution, the polarization plane will be deflected, and the state of the system can be expressed as:
[0078] (2)
[0079] In the formula, , denotes the transverse distribution of the wave packet of the measuring instrument, denotes the transverse wave vector component. After the light beam passes through the chiral molecule solution, it will be reflected on the chip. By proper adjustment, the left and right circularly polarized light in the light beam will deviate from each other, thereby generating the optical spin Hall effect. Onoda believes that the light beam in the inhomogeneous refractive index medium has a Berry phase, which will cause the center of mass of the wave packet to separate in the direction perpendicular to the refractive index gradient, which is the cause of the optical spin Hall effect. The Berry phase is denoted as , delta denotes the size of the spin transverse shift. In addition to the Berry phase, there is also an angular displacement Δ that is independent of the transverse spin (Δ is the included angle between the H polarization state and the V polarization state). Therefore, the state evolution of the whole system is
[0080] (3)
[0081] In the formula, denotes a second-order matrix, which is used to describe the change of the polarization state of the light when it is reflected due to the different reflectivities of the H polarization component and the V polarization component. r s , r p denotes the reflection coefficients of S waves and P waves.
[0082] (4)
[0083] The pre-selection state of the system is the horizontal polarization state, and the post-selection state is the vertical polarization state. The free evolution phase of the system is , z is the free transmission distance of the light beam, and k = 2π / λ denotes the central wave vector of the light beam.
[0084] The final state of the whole system can be represented as:
[0085] (5)
[0086] In the formula, . We can calculate all orders of without approximation, such as formula (6)
[0087] (6)
[0088] In the formula = 1, combined with formulas (5) and (6), we can get
[0089] (7)
[0090] The weak value can be represented as:
[0091] (8)
[0092] wherein eta = r s / r p . P denotes the probability of the previous selection, . The magnitude of the weak value is inversely proportional to the probability of the subsequent selection.
[0093] S13, positioning the irradiation light spot by using the electrically coupled element CCD and reading the light intensity data.
[0094] S2, calculating the spin Hall transverse value in the light intensity data read by step S1, and solving the rotation angle according to the spin Hall transverse value, in particular, the specific way is:
[0095] The spin Hall transverse value obtained by the weak measurement can be expressed as:
[0096] (9)
[0097] wherein R 0= kw 0 2 / 2, R 0 is the Rayleigh distance, w 0 is the beam waist radius.
[0098] (10)
[0099] wherein, delta H 、 delta V denote the spin Hall transverse value of the H-polarized light and the V-polarized light respectively,
[0100] , .
[0101] Simplifying formula (9) by combining the above formulas, the spin Hall transverse expression of the optical spin Hall effect of the chiral molecule solution is:
[0102] (11)
[0103] wherein, z 、 delta 、 k 0、 w 0 is a constant, a is the rotation angle, is the ratio of the S wave and P wave reflection coefficients of the enhanced chip structure, and the value range of is 50-60.
[0104] S3, calculating the specific rotation of the chiral molecule solution according to the optical rotation angle calculated in step S2, and obtaining the category of the corresponding molecular material according to the calculated specific rotation of the chiral molecule solution.
[0105] Specifically,
[0106] a = a s *lc ;
[0107] wherein, a s is the specific rotation of the chiral molecule solution, l is the length of the standard cuvette, c is the concentration of the sample solution to be measured. Since the optical spin Hall effect is a weak interaction, only in the case that the spin drift value of the optical spin Hall effect is relatively large, the optical spin Hall effect can be measured by the instrument. According to the obtained specific rotation of the chiral molecule solution, the category of the chiral molecule can be obtained by referring to a table.
[0108] The present application is described in reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present application. It should be understood that each flow and / or block in the flowcharts and / or block diagrams, as well as combinations of flows and / or blocks in the flowcharts and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general purpose computer, a special purpose computer, an embedded processor, or other programmable data processing apparatus to produce a machine, so that the instructions, which are executed via the processor of the computer or other programmable data processing apparatus, generate a means for implementing the functions specified in the flowcharts and / or block diagrams. Figure 1 one or more flows and / or blocks Figure 1 means for carrying out the functions specified in the flowcharts and / or block diagrams.
[0109] These computer program instructions can also be stored in a computer readable memory that can direct the computer or other programmable data processing apparatus to work in a specific manner, so that the instructions stored in the computer readable memory produce a manufactured product including instruction means, which implement the functions specified in the flowcharts and / or block diagrams. Figure 1 one or more flows and / or blocks Figure 1 means for carrying out the functions specified in the flowcharts and / or block diagrams.
[0110] These computer program instructions can also be loaded into a computer or other programmable data processing apparatus, so that a series of operation steps are performed on the computer or other programmable data processing apparatus to generate a computer implemented process, so that the instructions executed on the computer or other programmable data processing apparatus provide a process for implementing the functions specified in the flowcharts and / or block diagrams. Figure 1 one or more flows and / or blocks Figure 1 Figure 1 means for carrying out the functions specified in the flowcharts and / or block diagrams.
[0111] The principles and implementation manners of the present application are described by using specific examples in the present application. The above examples are only used for helping to understand the method of the present application and its core idea. Meanwhile, for the ordinary skilled in the art, according to the idea of the present application, the specific implementation manners and application ranges can be changed. In summary, the content of the present description should not be understood as a limitation on the present application.
[0112] Those skilled in the art will understand that the examples described herein are for the purpose of understanding the principles of the present application and should be understood as not limiting the scope of protection of the present application. Those skilled in the art can make various other specific modifications and combinations according to the technical inspiration disclosed in the present application without departing from the essence of the present application, and these modifications and combinations are still within the scope of protection of the present application.
Claims
1. A system for identifying chiral molecules based on the optical spin Hall effect of frustrated total internal reflection, characterized in that, The front selection light path, the enhanced chip structure, the rear selection light path and the CCD are sequentially arranged; The front selection light path is used for adjusting the intensity of the reflected light beam within the receiving signal bearing range of the CCD; The enhanced chip structure is used for enhancing the optical spin Hall effect of the reflected light beam; The rear selection light path is used for amplifying the spin splitting of the light beam after being reflected by the enhanced chip structure and collimating the reflected light; The CCD is used for positioning the light spot and reading the data of the received light intensity; The standard cuvette is arranged between the front selection light path and the enhanced chip structure, the standard cuvette contains the sample to be tested, and the enhanced chip structure comprises: TiO2(Al2O3 Si Al2O3) 4 TiO2, Al2O3 (SiO2 TiO2 SiO2) 7 Al2O3, SF 11 (MgF2 TiO2 MgF2) 6 SF 11 one of the following: TiO2, Al2O3, SiO2, MgF2, SF, and combinations thereof, for adjusting the ratio of the reflection coefficients of S and P waves in the enhanced chip structure.
2. The system according to claim 1, wherein the system is characterized by, The front selection light path comprises a He-Ne laser, a half-wave plate, a short focal length plano-convex lens and a first Glan polarizer in sequence; The He-Ne laser emits a light beam, and the half-wave plate is used for adjusting the intensity of the incident light beam to ensure that the receiving signal of the CCD is within its bearing range; The short focal length plano-convex lens is used for beam shrinking of the incident light; The first Glan polarizer is used for selecting the polarization state of the light beam emitted by the short focal length plano-convex lens.
3. The chiral molecule identification system based on the optical spin Hall effect of frustrated total reflection according to claim 2, wherein the rear selection light path comprises a second Glan polarizer and a long focal length plano-convex lens in sequence, and wherein The second Glan polarizer is used for making the left and right circularly polarized light after being reflected by the enhanced chip structure interfere destructively, and amplifying the Hall spin splitting; The long focal length plano-convex lens is used for collimating the light beam passing through the second Glan polarizer and forming a confocal cavity with the short focal length plano-convex lens.
4. The system according to claim 3, wherein the system is characterized by, When the system works, the He-Ne laser emits a light beam, the half-wave plate adjusts the intensity of the incident light, the short focal length plano-convex lens shrinks the beam, the first Glan polarizer selects the polarization state of the light beam, the light beam passes through the chiral molecule solution in the standard cuvette and is polarized, the light beam is split after being reflected by the enhanced chip structure, the left and right circularly polarized light after being split interferes destructively through the second Glan polarizer, and the light beam is collimated by the long focal length plano-convex lens and irradiated on the CCD, the CCD positions the light spot and reads the data, and the material composition in the chiral molecule solution is analyzed.
5. A method of authentication based on the authentication system of any one of claims 1-4, characterized in that, The method comprises the following steps: S1, constructing a chiral molecule identification system based on the optical spin Hall effect of frustrated total reflection and reading the light intensity data; S2, calculating the optical spin transverse shift value in the light intensity data read in step S1, and solving the optical rotation angle according to the optical spin transverse shift value; S3, solving the specific rotation of the chiral molecule solution according to the optical rotation angle calculated in step S2, and obtaining the category of the corresponding molecular material according to the calculated specific rotation of the chiral molecule solution, wherein the optical spin transverse shift value is represented as: ； wherein, z , δ , k 0 is a constant, w 0 is a constant, a is an optical rotation angle, is a ratio of the reflection coefficients of the enhanced chip structure for S and P waves, and the value range of is 50-60.
6. The method according to claim 5, wherein the method is characterized by, The step S1 specifically comprises: S11, determining the concentration of the chiral molecule solution in the labeled cuvette and the enhanced chip structure according to different materials; S12, emitting laser beam by pre-selection optical path, reflecting by enhanced chip structure after passing through chiral molecule solution in standard colorimetric cell, irradiating to electric coupling element CCD through post-selection optical path; S13, positioning irradiation light spot by electric coupling element CCD, and reading light intensity data.
7. The method according to claim 6, wherein the method is characterized by, The calculation method of specific rotation of the chiral molecule solution in the step S3 is: a=a s *lc ； wherein, a s is the specific optical rotation of the chiral molecule solution, l is the length of the standard cuvette, c is the concentration of the chiral molecule solution in the sample to be measured.