Photoelectric memristor with light source and preparation method thereof

Abstract

The application discloses a photoelectric memristor with a light source and a preparation method thereof, and comprises at least one LED providing a light source, a memristor body, and an insulating layer filled between the LED and the memristor body; the LED and the memristor body are vertically integrated, and adjacent LEDs are aligned two by two, and the memristor body is aligned with the adjacent LEDs. The LED structure comprises a substrate, a buffer layer, an N-type layer, a light-emitting layer, a P-type layer, an N electrode and a P electrode; the memristor body structure comprises a bottom electrode layer, a dielectric layer and a top electrode layer. The LED preparation method comprises sequentially growing the buffer layer, the N-type layer, the light-emitting layer, the P-type layer, the N electrode and the P electrode on the substrate, then filling and polishing, and finally sequentially growing the bottom electrode layer, the dielectric layer and the top electrode layer of the memristor. The photoelectric memristor with the light source integrates the light source LED and the memristor seamlessly on one device, and realizes the regulation of the conductance of the memristor by utilizing the light emission of the LED. The method is favorable for the subsequent large-scale integration of the photoelectric memristor.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of optoelectronic memristor, and particularly relates to an optoelectronic memristor with a light source and a preparation method thereof. BACKGROUND

[0002] With the rapid development of society, the amount of data increases exponentially, and the traditional computer based on the von Neumann architecture cannot process and store data simultaneously, which leads to a serious bottleneck in the improvement of information processing efficiency (von Neumann bottleneck). The existing computer has been unable to meet the demand of human society for higher information processing speed, therefore, developing a non-von Neumann computing architecture based on a new type of device has become one of the most potential solutions to solve the von Neumann bottleneck.

[0003] In 1971, Professor Chua proposed the concept of memristor when studying the relationship between charge, current, voltage and magnetic flux. It represents the relationship between charge and magnetic flux and is a nonlinear resistor with charge memory function. The conductance of the memristor usually needs to be controlled by electricity, but the movement of voltage-driven ions will cause changes in the microstructure of the material, and Joule heat will further exacerbate the microstructure changes, leading to the deterioration of the stability of the device. The above factors seriously restrict the practical application of the memristor. Light has the advantages of high bandwidth, ultrafast speed, excellent parallelism, etc., and light can control the conductance of the memristor. More importantly, only electronic behavior is involved in the memristor under light, without ion migration and Joule heat generation, so the stability of the light-controlled memristor can be greatly improved. At present, researchers have achieved one-way and bidirectional control of the conductance of the memristor by light. For example, the document “Light-Gated Memristor with Integrated Logic and Memory Functions” (ACS Nano, 2017, https: / / doi.org / 10.1021 / acsnano.7b05762) uses light to achieve step-by-step increase of the conductance of the memristor; the document “All-Optically Controlled Memristor for Optoelectronic Neuromorphic Computing” (Advanced Functional Materials, 2021, https: / / doi.org / 10.1002 / adfm.202005582) realizes bidirectional reversible control of the conductance of the memristor under light. The patent specification with publication number CN109449289A discloses a light-controlled memristor, which uses light signals to gradually increase the conductance of the memristor; the patent specification with publication number CN113517886A discloses an all-optical memristor, that is, the light signal can both increase and decrease the conductance of the memristor. However, the control of the conductance of the optoelectronic memristor in the two patents still depends on external light sources, which is not conducive to subsequent large-scale integration.

[0004] At present, optoelectronic memristors are all controlled by external light sources (such as optical fibers, lasers, etc.) to control the conductance. In this mode of operation, the optoelectronic memristor cannot be integrated on a large scale, which seriously restricts its practical application. Therefore, how to seamlessly integrate the light source and the memristor to realize large-scale integration of the optoelectronic memristor is a key technical problem that needs to be solved in this field. SUMMARY

[0005] To address the problem that large-scale integration of opto-memristors with external light sources is not possible in existing technologies, this invention aims to provide an opto-memristor with its own light source and its fabrication method. This method seamlessly integrates a light-emitting diode (LED) and a memristor onto a single device, using LED light emission to control the conductance of the memristor.

[0006] To achieve the above-mentioned objectives, the present invention adopts the following technical solution.

[0007] The present invention provides a photoelectric memristor with its own light source, wherein the light source is an LED light source, and the photoelectric memristor includes at least one LED providing the LED light source, a memristor body, and an insulating layer filled between adjacent LEDs and the memristor body.

[0008] The LEDs and memristor bodies are combined to form a vertically integrated structure with each pair of LEDs stacked together. Adjacent LEDs are aligned with each other, and the memristor bodies are aligned with adjacent LEDs. Adjacent LEDs are bonded together with adhesive.

[0009] The LED also includes a driving circuit substrate that is matched one-to-one with it; the driving circuit substrate forms an electrical connection with the N electrode and P electrode of the matched LED, and the LED light source switching and memristor read voltage pulse are programmed and controlled by a programmable control circuit.

[0010] Furthermore, the adhesive used for bonding the LEDs is selected from one or more of polyimide (PI), benzocyclobutene (BCB), or SU-8. More preferably, the bonding adhesive is BCB.

[0011] The wavelength range of the LED light source is 250 nm-1000 nm.

[0012] The LED provides one or more LED light sources with different wavelengths; and the LED light source closer to the memristor body has a shorter wavelength, while the LED light source farther away from the memristor body has a longer wavelength.

[0013] The insulating layer filled between adjacent LEDs and the memristor body is made of one or more of the following materials: alumina, silicon oxide, silicon nitride, polyimide (PI), benzocyclobutene (BCB), or SU-8. In various embodiments of the present invention, the insulating layer material between adjacent LEDs and the memristor in Examples 1 and 2 is alumina, while in Example 3, BCB bonding adhesive is used to fill the space between adjacent LEDs and the memristor body to bond them together. The insulating layer material can be chemically mechanically polished to achieve planarization (roughness <1 nm), which is beneficial for improving memristor performance.

[0014] Furthermore, the LEDs are all located on one side of the memristor body, that is, above or below the memristor body, or the LEDs are located on both sides of the memristor body.

[0015] The LED is selected from one or more of the following: organic light-emitting diodes (OLEDs), quantum dot light-emitting diodes (QLEDs), GaN-based LEDs, GaAs-based LEDs, GaP-based LEDs, AlGaAs-based LEDs, GaAsP-based LEDs, AlGaInP-based LEDs, InP-based LEDs, ZnS-based LEDs, or ZnSe-based LEDs. In embodiments of the present invention, the LED is a GaN-based LED with a blue light source and / or an AlGaInP-based LED with a red light source. The structure of the GaN-based LED includes a substrate, a buffer layer of intrinsic GaN, an N-type layer of n-GaN, a light-emitting layer of InGaN / GaN, a P-type layer of p-AlGaN, an N-electrode, and a P-electrode. The structure of the AlGaInP-based LED includes a substrate, a silicon oxide layer, P-type layers of p-GaP and p-AlInP, a light-emitting layer of AlGaInP / GaInP, an N-type layer of n-AlInP, n-AlGaInP, and n-GaAs, a P-electrode, and an N-electrode. The materials of the N-electrode and P-electrode are selected from one or more of Cu, Al, Ag, or Au. Further preferably, the N-electrode and P-electrode materials are Au.

[0016] The LED or the memristor body further includes a planarization layer, which is formed by filling the surface of the LED or memristor body with an insulating dielectric material to achieve planarization; the insulating dielectric material is selected from one or more of silicon oxide, aluminum oxide, or silicon nitride. More preferably, the insulating dielectric material is silicon nitride. The insulating dielectric material can be chemically and mechanically polished to achieve planarization (roughness <1 nm), which is beneficial to improving the performance of the memristor.

[0017] The LED can have a conventional, vertical, or flip-chip structure. In various embodiments of the present invention, the LED adopts a flip-chip structure. The N-electrode and P-electrode of a flip-chip LED are distributed on the same side, making it easy to control and providing excellent scalability. After expansion, it is easy to connect to the driving circuit board to achieve high integration. It also facilitates alignment between LED light sources or with the memristor body.

[0018] The memristor body comprises, from bottom to top, a bottom electrode layer, a dielectric layer, and a top electrode layer. The bottom electrode layer and the top electrode layer are made of conductive oxides or metals, and are transparent conductive oxides with a transmittance >50% or ultrathin metals with a thickness of less than 10 nm. This ensures that the electrodes of the memristor body are both conductive and have sufficient transmittance, guaranteeing the memristor body's reception of LED light sources. More preferably, the bottom electrode layer is made of conductive oxides, such as one or more combinations of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), and antimony-doped tin oxide (ATO); even more preferably, the bottom electrode layer is made of ITO. Alternatively, the top electrode layer is made of metals, such as one or more combinations of Au, Pt, Cu, Ag, Al, or Ti; even more preferably, the top electrode layer is made of Au.

[0019] The dielectric layer material of the memristor body is selected from one or more of oxides, sulfides, or nitrides. More preferably, the dielectric layer material is an oxide, such as zinc oxide, tin oxide, gallium oxide, indium oxide, indium tin oxide, or a combination of one or more of indium gallium zinc oxide. Even more preferably, the dielectric layer material is indium gallium zinc oxide.

[0020] This invention also provides a method for fabricating a photoelectric memristor as described above, wherein the LED structure includes a substrate, a buffer layer, an N-type layer, a light-emitting layer, a P-type layer, an N-electrode, and a P-electrode; the memristor body structure includes a bottom electrode layer, a dielectric layer, and a top electrode layer. The LED fabrication method involves sequentially growing the buffer layer, N-type layer, light-emitting layer, P-type layer, N-electrode, and P-electrode on the substrate, then filling and polishing the planarization layer and / or insulating layer, and finally sequentially growing the bottom electrode layer, dielectric layer, and top electrode layer of the memristor.

[0021] The methods for preparing the various functional layers of the LED (including buffer layer, N-type layer, light-emitting layer, and P-type layer) include one or more of the following: vapor phase epitaxy, liquid phase epitaxy, metal-organic chemical vapor deposition, molecular beam epitaxy, vacuum evaporation, or solution method.

[0022] The growth method of the N-electrode and P-electrode of the LED includes one or more of electron beam evaporation, thermal evaporation, or magnetron sputtering. More preferably, the growth method of the N-electrode and P-electrode of the LED is electron beam evaporation.

[0023] The method for preparing the dielectric layer of the memristor body includes one or more of the following: magnetron sputtering, electron beam evaporation, thermal evaporation, pulsed laser deposition, atomic layer deposition, chemical vapor deposition, or solution methods. More preferably, the method for preparing the dielectric layer material of the memristor is magnetron sputtering.

[0024] The method for fabricating the electrode layer of the memristor body includes one or more of electron beam evaporation, thermal evaporation, pulsed laser deposition, atomic layer deposition, or chemical vapor deposition. More preferably, the bottom electrode layer of the memristor body is fabricated by magnetron sputtering; the top electrode layer of the memristor body is fabricated by electron beam evaporation.

[0025] Compared with the prior art, the main advantages of this invention include:

[0026] (1) The photoelectric memristor with its own light source of the present invention can simply and effectively use light to control the conductance of the memristor. Since both the LED and the memristor body can be controlled by programming circuits, the present invention can realize the large-scale integration and application of photoelectric memristors.

[0027] (2) In the photoelectric memristor with built-in light source of the present invention, the LED adopts a flip-chip structure, the N electrode and the P electrode are distributed on the same side, which is easy to control and has excellent scalability. After expansion, it is easy to connect with the driving circuit board, thereby ensuring the high integration of the device. Therefore, the present invention has broad application prospects. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the structure of a blue LED.

[0029] Figure 2 This is a simplified structural diagram of a blue LED.

[0030] Figure 3 This is a schematic diagram of the structure of a red LED.

[0031] Figure 4 This is a simplified structural diagram of a red LED.

[0032] Figures 5-12 This is a flowchart illustrating the fabrication process of the photoelectric memristor in Embodiment 1 of the present invention; wherein the photoelectric memristor includes an LED and a memristor body; Figures 5-12 These correspond to steps A-H in the fabrication process of the photomemristor in Example 1.

[0033] Figures 13-25 This is a flowchart illustrating the fabrication process of the photoelectric memristor in Embodiment 2 of the present invention; wherein the photoelectric memristor includes a memristor body and two LEDs vertically integrated below. Figures 13-25 These correspond to steps A-M of the photomemristor fabrication process in Example 2.

[0034] Figures 26-39 This is a flowchart illustrating the fabrication process of the photoresistor in Embodiment 3 of the present invention; wherein the photoresistor includes a memristor body and two LEDs arranged vertically on the upper and lower sides. Figures 26-39 These correspond to steps A through N in the fabrication process of the photomemristor in Example 3.

[0035] Figure 40 The graph shows the change in the conductance of a memristor when illuminated by a blue LED; the LED emission wavelength is 450nm and the illumination time is 15s.

[0036] Figure 41 The graph shows the change in the conductance of a memristor when illuminated by a red LED; the LED emission wavelength is 650nm and the illumination time is 150s.

[0037] Figure 42 The graph shows the change in conductance of a memristor after it has been illuminated by a blue LED and then by a red LED; the 450 nm blue light illumination time is 15 s and the 650 nm red light illumination time is 150 s.

[0038] In the above figures, 1 is the substrate, 2 is the buffer layer, 3 is the N-type layer, 4 is the light-emitting layer, 5 is the P-type layer, 6 is the N-electrode, 7 is the P-electrode, 8 is the blue LED body, 9 is silicon oxide, 10 is the red LED body, 11 is the LED driver circuit substrate, 12 is silicon nitride, 13 is aluminum oxide, 14 is ITO, 15 is indium gallium zinc oxide, 16 is Au, 17 is the red LED driver circuit substrate, 18 is the blue LED driver circuit substrate, and 19 is BCB adhesive. Detailed Implementation

[0039] The present invention will be further described below with reference to the accompanying drawings and specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of the invention.

[0040] In a further implementation, the LED light source is a blue LED light source or a red LED light source.

[0041] In a further embodiment, the LED uses a sapphire substrate.

[0042] In a further implementation scheme, the blue LED structure is as follows: Figure 1 As shown, from top to bottom, the layers are: substrate 1, buffer layer 2, N-type layer 3, light-emitting layer 4, P-type layer 5, N-electrode 6, and P-electrode 7. A simplified diagram of a blue LED structure is shown below. Figure 2 As shown, it consists of a blue LED body 8 (including a substrate 1, a buffer layer 2, an N-type layer 3, a light-emitting layer 4, and a P-type layer 5) and N-electrodes 6 and P-electrodes 7. The blue LED structure in the following embodiments all adopts this design. Figure 2 The diagram shown is a simplified representation of the blue LED structure.

[0043] In a further embodiment of the present invention, the red LED structure is as follows: Figure 3As shown, from top to bottom, the layers are: substrate 1, silicon oxide layer 9, P-type layer 5, light-emitting layer 4, N-type layer 3, P-electrode 7, and N-electrode 6. A simplified diagram of a red LED structure is shown below. Figure 4 As shown, it consists of an LED body 10 (including a substrate 1, a silicon oxide layer 9, a P-type layer 5, a light-emitting layer 4, and an N-type layer 3) and P-electrodes 7 and N-electrodes 6. The red LED structure in each of the following embodiments all adopts this design. Figure 4 The diagram shows a simplified structure of a red LED.

[0044] In a further embodiment, the blue LED is selected as a GaN-based LED.

[0045] In a further embodiment, the red LED is selected as an LED based on AlGaInP material.

[0046] In a further embodiment, the blue LED structure includes: a substrate; an intrinsic GaN buffer layer grown on the substrate; an n-GaN N-type layer grown on the buffer layer; an InGaN / GaN multiple quantum well layer grown on the n-GaN; a p-AlGaN P-type layer grown on the InGaN / GaN multiple quantum well layer; and an N-electrode and a P-electrode formed on the p-type layer.

[0047] In a further embodiment, the red LED structure includes: an n-GaAs ohmic contact layer; an n-AlGaInP roughened current spreading layer grown on the n-GaAs; an n-AlInP confinement layer grown on the n-AlGaInP; an AlGaInP / GaInP light-emitting layer grown on the n-AlInP; a p-AlInP confinement layer grown on the light-emitting layer; a p-GaP window layer grown on the p-AlInP; a silicon oxide layer grown on the p-GaP; a substrate with silicon oxide grown on it bonded to the silicon oxide on the p-GaP; and an N-electrode and a P-electrode formed on the n-GaAs ohmic contact layer.

[0048] In a further embodiment, the N-electrode and P-electrode materials comprise one or more of Cu, Al, Ag, or Au. More preferably, the N-electrode and P-electrode materials are Au.

[0049] In further implementation schemes, such as Figure 1 and Figure 3 As shown, both the blue LED and the red LED adopt a flip-chip structure, with their N-electrode and P-electrode on the same side.

[0050] In a further embodiment, before vertical integration between LEDs or between LEDs and memristor bodies, the surface of the LED or memristor body is filled with an insulating dielectric material, and planarized by chemical mechanical polishing to achieve a roughness of less than 1 nm at the interface between the two; the insulating dielectric material is selected from one or more of silicon oxide, aluminum oxide, or silicon nitride. Silicon nitride is further preferred.

[0051] In a further embodiment, the bonding adhesive material between the plurality of LEDs comprises one or more of polyimide (PI), benzocyclobutene (BCB), or SU-8. More preferably, the bonding adhesive material is BCB.

[0052] In a further embodiment, the insulating layer material between adjacent LEDs and the memristor body includes one or more of silicon oxide, aluminum oxide, or silicon nitride. More preferably, the insulating layer material between adjacent LEDs and the memristor is aluminum oxide. Alternatively, the LEDs and the memristor body are bonded together using a bonding adhesive, which is one or more of polyimide (PI), benzocyclobutene (BCB), or SU-8. In this embodiment 3, BCB is used.

[0053] In a further embodiment, the bottom electrode material of the memristor body comprises a conductive oxide or a metal. More preferably, the bottom electrode material is a conductive oxide, and one or more combinations of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), and antimony-doped tin oxide (ATO). Even more preferably, the bottom electrode material is ITO.

[0054] In a further embodiment, the dielectric layer material of the memristor body includes one or more of oxides, sulfides, or nitrides. More preferably, the dielectric layer material is an oxide, such as one or more combinations of zinc oxide, tin oxide, gallium oxide, indium oxide, indium tin oxide, or indium gallium zinc oxide. Even more preferably, the semiconductor layer material is indium gallium zinc oxide.

[0055] In a further embodiment, the top electrode material of the memristor body comprises a conductive oxide or a metal. More preferably, the top electrode material is a metal, such as one or more combinations of Au, Pt, Cu, Ag, Al, or Ti. Even more preferably, the material of the top electrode layer is Au.

[0056] In a further embodiment, the blue LED fabrication step includes:

[0057] Step A1: Intrinsic GaN buffer layer, n-GaN layer, InGaN / GaN multiple quantum well layer and p-AlGaN layer are epitaxially grown sequentially on sapphire substrate;

[0058] Step B1: A P-electrode is grown on the p-AlGaN layer obtained in step A1 using a mask;

[0059] Step C1: Etch on the device obtained in step B1 and grow an N-electrode using a mask;

[0060] Step D1: Perform rapid thermal annealing on the device obtained in step C1 to obtain a blue LED.

[0061] In a further embodiment, the red LED fabrication step includes:

[0062] Step A2: Epitaxially grow the following layers sequentially on the GaAs substrate: n-GaAs buffer layer, n-AlGaInP etching stop layer, n-GaAs ohmic contact layer, n-AlGaInP roughening current extension layer, n-AlInP confinement layer, multi-quantum well layer AlGaInP / GaInP, p-AlInP confinement layer, and p-GaP window layer.

[0063] Step B2: Grow silicon oxide on the p-GaP layer obtained in step A2;

[0064] Step C2: The silicon oxide obtained in step B2 is bonded to the sapphire substrate on which silicon oxide has been grown by high temperature and high pressure.

[0065] Step D2: Etch GaAs substrate, n-GaAs buffer layer, and n-AlGaInP etching stop layer;

[0066] Step E2: An N-electrode is grown on the n-GaAs ohmic contact layer obtained after etching in step D2 using a mask.

[0067] Step F2: Etch on the device obtained in step E2 and grow a P electrode using a mask;

[0068] Step G2: Perform rapid thermal annealing on the device obtained in step F2 to obtain a red LED;

[0069] Specifically, in steps A1 and A2, each layer of material is grown using metal-organic chemical vapor deposition; in steps C1, D2, and F2, partial etching is performed using inductively coupled plasma etching; and in steps B1, B2, C1, E2, and F2, silicon oxide, N-electrode, and P-electrode are grown using electron beam evaporation.

[0070] Example 1

[0071] The photoelectric memristor with its own light source prepared in Example 1 includes one LED and one memristor body.

[0072] In this embodiment, the LED size is 4μm and the memristor body size is 1μm.

[0073] The fabrication method of the photoelectric memristor with its own light source in this embodiment includes the following steps, and the manufacturing flowcharts for each step are attached. Figures 5-12 , Figures 5-12 The following is a flowchart of the fabrication process of the photoelectric memristor in this embodiment: each figure corresponds to step A-step H of the fabrication process of the photoelectric memristor in this embodiment.

[0074] Step A: Fabricate the driver circuit board; as shown in the attached document. Figure 5 .

[0075] Step B: LED fabrication; as shown in the attached document. Figure 6 .

[0076] Step C: A good electrical connection is formed between the LED and the driver circuit board; as shown in the attached diagram. Figure 7 .

[0077] Step D: Silicon nitride insulating material is grown on the structure connecting the driver circuit substrate and the LED, serving as both filler and separator; then chemical mechanical planarization is performed to achieve a roughness of less than 1 nm; as shown in the attached figure. Figure 8 .

[0078] Step E: Grow an aluminum oxide insulating layer on the LED after silicon nitride filling in step D; as shown in the attached diagram. Figure 9 .

[0079] Step F: An ITO bottom electrode is grown on the alumina obtained in step E using a mask; as shown in the attached diagram. Figure 10 .

[0080] Step G: An indium gallium zinc oxide dielectric layer is grown on the ITO bottom electrode obtained in step F using a mask; as shown in the attached diagram. Figure 11 .

[0081] Step H: An Au top electrode is grown on the indium gallium zinc oxide dielectric layer obtained in step G using a mask; as shown in the attached diagram. Figure 12 .

[0082] Example 2

[0083] The photoelectric memristor with its own light source prepared in Example 2 includes two LEDs and one memristor body. The structure from bottom to top is as follows: red LED, blue LED, and memristor body.

[0084] In this embodiment, the red LED has a size of 4 μm, the blue LED has a size of 2 μm, and the memristor body has a size of 1 μm.

[0085] The fabrication method of the photoelectric memristor with its own light source in this embodiment includes the following steps, and the manufacturing flowcharts for each step are attached. Figures 13-25 .Figures 13-25 The following is a flowchart of the fabrication process of the photoelectric memristor in this embodiment: each figure corresponds to step A-step M of the fabrication process of the photoelectric memristor in this embodiment.

[0086] Step A: Fabricate the driver circuit board for the red LED; as shown in the attached image. Figure 13 .

[0087] Step B: Fabrication of red LEDs; as shown in the attached document. Figure 14 .

[0088] Step C: A good electrical connection is formed between the driver circuit board and the red LED; as shown in the attached diagram. Figure 15 .

[0089] Step D: Silicon nitride insulating material is grown on the structure connecting the driving circuit substrate and the red LED, serving as both filler and separator; then chemical mechanical planarization is performed to achieve a roughness of less than 1 nm; as shown in the attached figure. Figure 16 .

[0090] Step E: Fabricate the driver circuit board for the blue LED; as shown in the attached document. Figure 17 .

[0091] Step F: Fabrication of blue LEDs; as shown in the attached document. Figure 18 .

[0092] Step G: A good electrical connection is formed between the driver circuit board and the blue LED; as shown in the attached diagram. Figure 19 .

[0093] Step H: Silicon nitride insulating material is grown on the structure connecting the driving circuit substrate and the blue LED, serving as both filler and separator; then, chemical mechanical planarization is performed to achieve a roughness of less than 1 nm; as shown in the attached figure. Figure 20 .

[0094] Step I: Apply BCB adhesive to the red LED prepared in step D, and integrate the red LED prepared in step D and the blue LED prepared in step H. Note that the blue LED should be positioned above the red LED, and the red LED should be aligned with the blue LED; see attached... Figure 21 .

[0095] Step J: Grow an aluminum oxide insulating layer on the integrated blue LED from Step I; as shown in the attached diagram. Figure 22 .

[0096] Step K: An ITO bottom electrode is grown on the alumina obtained in step J using a mask; as shown in the attached diagram. Figure 23 .

[0097] Step L: An indium gallium zinc oxide dielectric layer is grown on the ITO bottom electrode obtained in step K using a mask; as shown in the attached diagram. Figure 24 .

[0098] Step M: An Au top electrode is grown on the indium gallium zinc oxide dielectric layer obtained in step L using a mask; as shown in the attached diagram. Figure 25 .

[0099] Example 3

[0100] The photoelectric memristor with its own light source prepared in Example 3 includes two LEDs and one memristor body. The structure from bottom to top is as follows: red LED, memristor body, and blue LED.

[0101] In this embodiment, the red LED has a size of 4 μm, the blue LED has a size of 4 μm, and the memristor body has a size of 1 μm.

[0102] The fabrication method of the photoelectric memristor with its own light source in this embodiment includes the following steps, and the manufacturing flowcharts for each step are attached. Figures 26-39 . Figures 26-39 The following is a flowchart of the fabrication process of the photoelectric memristor in this embodiment: each figure corresponds to step A-N of the fabrication process of the photoelectric memristor in this embodiment.

[0103] Step A: Fabricate the driver circuit board for the red LED; as shown in the attached image. Figure 26 .

[0104] Step B: Fabrication of red LEDs; as shown in the attached document. Figure 27 .

[0105] Step C: A good electrical connection is formed between the driver circuit board and the red LED; as shown in the attached diagram. Figure 28 .

[0106] Step D: Silicon nitride insulating material is grown on the structure connecting the driving circuit substrate and the red LED, serving as both filler and separator; then chemical mechanical planarization is performed to achieve a roughness of less than 1 nm; as shown in the attached figure. Figure 29 .

[0107] Step E: Fabricate the driver circuit board for the blue LED; as shown in the attached document. Figure 30 .

[0108] Step F: Fabricate the blue LED; as shown in the attached document. Figure 31 .

[0109] Step G: A good electrical connection is formed between the driver circuit board and the blue LED; as shown in the attached diagram. Figure 32 .

[0110] Step H: Silicon nitride insulating material is grown on the structure connecting the driving circuit substrate and the blue LED, serving as both filler and separator; then, chemical mechanical planarization is performed to achieve a roughness of less than 1 nm; as shown in the attached figure. Figure 33 .

[0111] Step I: Grow an alumina insulating layer on the red LED prepared in step D; as shown in the attached figure. Figure 34 .

[0112] Step J: An ITO bottom electrode is grown on the alumina obtained in Step I using a mask; as shown in the attached diagram. Figure 35 .

[0113] Step K: An indium gallium zinc oxide dielectric layer is grown on the ITO bottom electrode obtained in step J using a mask; as shown in the attached diagram. Figure 36 .

[0114] Step L: An Au top electrode is grown on the indium gallium zinc oxide dielectric layer obtained in step K using a mask; as shown in the attached diagram. Figure 37 .

[0115] Step M: Silicon nitride insulating material is grown on the memristor body obtained in step L, serving as a filler and separator; then chemical mechanical planarization is performed, and the surface roughness after grinding is less than 1 nm; as shown in the attached figure. Figure 38 .

[0116] Step N: Apply BCB adhesive to the memristor after grinding in step M, and then integrate it with the blue LED prepared in step H. Pay attention to the alignment of the LED light source with the memristor body; see attached... Figure 39 .

[0117] In the various specific embodiments of the present invention described above, in the process steps requiring alignment between LED light sources or alignment between LED light sources and the memristor body, alignment between LED light sources is achieved by designing solder joint positions on each LED driving circuit substrate; or, the mask required for growing the memristor body is designed according to the driving circuit substrate of the LED light source, such as mask size, the position of the openings on the mask (corresponding to the solder joint positions on the driving circuit substrate), etc., to achieve alignment between the LED light source and the memristor body. The self-illuminated photoelectric memristor of the present invention, because the self-illuminated LED and the memristor body are seamlessly integrated into one device, achieves precise alignment between LED light sources and between the LED light source and the memristor body in one step during the fabrication process. This effectively enables precise control of the memristor's conductivity. More importantly, the self-illuminated photoelectric memristor is conducive to large-scale integrated applications.

[0118] Figures 40-42 The figure shown is a photoelectric performance diagram of the photoelectric memristor with its own light source prepared in Embodiment 2 of the present invention.

[0119] Figure 40 This is a graph showing the change in the conductance of the memristor when illuminated by a blue LED. The specific operation is as follows: The blue LED is turned on by controlling the blue light driving circuit board 18, emitting 450 nm blue light to illuminate the memristor. After 15 seconds of illumination, the blue LED is turned off by controlling the blue light driving circuit board 18.Figure 40 As shown, after irradiating the memristor body with blue light for 15 seconds, the memristor conductivity increases and remains stable.

[0120] Figure 41 This is a graph showing the change in the conductance of the memristor when illuminated by a red LED. The specific operation is as follows: The red LED is turned on by controlling the red light driving circuit board 17, emitting 650 nm red light to illuminate the memristor. After 150 seconds, the red LED is turned off by controlling the red light driving circuit board 17. Figure 41 As shown, after red light irradiates the memristor for 150 seconds, the memristor's conductivity increases and remains stable.

[0121] Figure 42 The graph shows the conductance change of a memristor after it has been illuminated by a blue LED and then by a red LED. The specific operation is as follows: The blue LED is turned on by the driving circuit board 18, emitting 450nm blue light, and then turned off after 15 seconds. Then, the red LED is turned on by the driving circuit board 17, emitting 650nm red light to illuminate the memristor. The red LED is turned on for 150 seconds, and then the red LED is turned off by the driving circuit board 17. Figure 42 As shown, after red light irradiates the memristor body for 150 seconds, the memristor conductivity decreases and remains stable.

[0122] from Figures 40-42 Test results show that the photoelectric memristor with its own light source of the present invention can effectively achieve unidirectional and bidirectional control of the device's conductivity.

Claims

1. A photoelectric memristor with its own light source, characterized in that: The built-in light source is an LED light source, and the photoelectric memristor includes at least two LEDs that provide the LED light source, a memristor body, and an insulating layer filled between adjacent LEDs and the memristor body. The LEDs and memristor bodies are vertically integrated structures stacked in pairs, with adjacent LED light sources aligned in pairs and the memristor bodies aligned with adjacent LED light sources. The LED also includes a driving circuit substrate that is matched one-to-one with it; the driving circuit substrate forms an electrical connection with the N electrode and P electrode of the matched LED. The memristor body comprises, from bottom to top, a bottom electrode layer, a dielectric layer, and a top electrode layer; wherein the materials of the bottom electrode layer and the top electrode layer are selected from conductive oxides or metals, and are transparent conductive oxides with a light transmittance of greater than 50% or ultrathin metals with a thickness of less than 10 nm. Adjacent LEDs are bonded together using adhesive. The insulating layer filled between the adjacent LED and the memristor body is one or more of aluminum oxide, silicon oxide or silicon nitride, or a bonding adhesive selected from one or more of polyimide (PI), benzocyclobutene (BCB) or SU-8. The structure of the LED includes a substrate, a buffer layer, an N-type layer, a light-emitting layer, a P-type layer, an N-electrode, and a P-electrode; The LED has a flip-chip structure.

2. The photoelectric memristor with its own light source according to claim 1, characterized in that: The adhesive used for bonding is selected from one or more of polyimide (PI), benzocyclobutene (BCB), or SU-8.

3. A photoelectric memristor with a built-in light source according to claim 1, characterized in that: The transparent conductive oxide is selected from one or more combinations of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), and antimony-doped tin oxide (ATO); the metal is selected from one or more combinations of Au, Pt, Cu, Ag, Al, or Ti.

4. A photoelectric memristor with a built-in light source according to claim 1, characterized in that: The LEDs are all located on one side of the memristor body, that is, above or below the memristor body.

5. A photoelectric memristor with a built-in light source according to claim 1, characterized in that: The LEDs are located on both sides of the memristor body.

6. A photoelectric memristor with a built-in light source according to claim 1, characterized in that: The wavelength range of the LED light source is 250 nm-1000 nm, and the LED provides one or more different wavelengths of LED light source; and the LED light source closer to the memristor body has a shorter wavelength, and the LED light source farther away from the memristor body has a longer wavelength.

7. A photoelectric memristor with a built-in light source according to claim 6, characterized in that: The LED is selected from one or more of organic light-emitting diodes, quantum dot light-emitting diodes, GaN-based LEDs, GaAs-based LEDs, GaP-based LEDs, AlGaAs-based LEDs, GaAsP-based LEDs, AlGaInP-based LEDs, InP-based LEDs, ZnS-based LEDs, or ZnSe-based LEDs.

8. A photoelectric memristor with a built-in light source according to claim 6, characterized in that: The LED is a GaN-based LED with a blue light source, or / and an AlGaInP-based LED with a red light source.

9. A photoelectric memristor with a built-in light source according to claim 1, characterized in that: The LED or the memristor body further includes a planarization layer, which is filled with an insulating dielectric material to achieve planarization; the insulating dielectric material is selected from one or more of silicon oxide, aluminum oxide or silicon nitride.

10. A photoelectric memristor with a built-in light source according to claim 1, characterized in that: The dielectric layer material of the memristor body is selected from one or more combinations of oxides such as zinc oxide, tin oxide, gallium oxide, indium oxide, indium tin oxide, or indium gallium zinc oxide.

11. A method for preparing a photoelectric memristor with a built-in light source as described in any one of claims 1-10, characterized in that: First, the LED is prepared by sequentially growing a buffer layer, an N-type layer, a light-emitting layer, a P-type layer, an N-electrode, and a P-electrode on a substrate; then, a planarization layer and / or an insulating layer are filled and polished; finally, the bottom electrode layer, the dielectric layer, and the top electrode layer of the memristor body are sequentially grown.

Images