Monolithic modular microwave source with integrated process gas distribution

Abstract

Embodiments disclosed herein include a housing for a source array. In one embodiment, the housing includes an electrically conductive body, where the electrically conductive body includes a first surface and a second surface opposite the first surface. In one embodiment, a plurality of openings are formed through the electrically conductive body, and a channel is disposed in the second surface of the electrically conductive body. In one embodiment, a cover is over the channel, and the cover includes a first aperture through a thickness of the cover. In one embodiment, the housing further includes a second aperture through a thickness of the electrically conductive body. In one embodiment, the second aperture intersects the channel.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to U.S. non-provisional application No. 16 / 586,482, filed September 27, 2019, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The implementation relates to the field of semiconductor manufacturing, and more particularly to a monolithic source array with integrated processing gas distribution for high-frequency sources.

[0004] Description of the prior art

[0005] Some high-frequency plasma sources include an applicator that passes through an opening in a dielectric plate. This opening allows the applicator (e.g., a dielectric cavity resonator) to be exposed to the plasma environment. However, it has been shown that plasma is also generated within the opening in the dielectric plate surrounding the applicator. This can potentially create plasma inhomogeneities within the processing chamber. Furthermore, exposing the applicator to the plasma environment can lead to faster degradation of the applicator.

[0006] In some implementations, the applicator is positioned above or within a cavity and enters (but does not penetrate) the dielectric. This configuration reduces coupling with the cavity interior and therefore does not provide optimal plasma generation. The coupling of high-frequency electromagnetic radiation with the cavity interior is reduced in part due to the additional interface between the dielectric and the applicator, across which the high-frequency electromagnetic radiation needs to propagate. Furthermore, variations at each applicator and across the interface of different processing tools (e.g., applicator positioning, surface roughness of the applicator and / or dielectric, angle of the applicator relative to the dielectric, etc.) can lead to plasma inhomogeneities.

[0007] In particular, plasma inhomogeneities are more likely to occur (within a single processing chamber and / or across different processing chambers, e.g., chamber matching) when the applicator is a discrete component. For example, in the case of discrete components, small variations (e.g., component, processing tolerance, etc.) can lead to plasma inhomogeneities, which can negatively impact the processing conditions within the chamber. Summary of the Invention

[0008] Embodiments disclosed herein include a housing for a source array. In one embodiment, the housing includes an electrically conductive body, where the electrically conductive body includes a first surface and a second surface opposite the first surface. In one embodiment, a plurality of openings are formed through the electrically conductive body, and a channel is disposed in the second surface of the electrically conductive body. In one embodiment, a cover is over the channel, and the cover includes a first aperture through a thickness of the cover. In one embodiment, the housing further includes a second aperture through a thickness of the electrically conductive body. In one embodiment, the second aperture intersects the channel.

[0009] Embodiments can also include an assembly for a processing tool, the assembly including a monolithic source array and a housing. In one embodiment, the monolithic source array includes a dielectric plate having a first surface and a second surface opposite the first surface, and a plurality of protrusions extending from the first surface of the dielectric plate. In one embodiment, a plurality of gas distribution holes open from the first surface to the second surface of the dielectric plate. In one embodiment, the housing is attached to the monolithic source array and includes an electrically conductive body having a third surface and a fourth surface opposite the third surface. In one embodiment, a plurality of openings are formed through the electrically conductive body, and each opening surrounds a different one of the plurality of protrusions. In one embodiment, a channel is disposed in the fourth surface of the electrically conductive body, and a cover is over the channel. In one embodiment, the cover includes a plurality of first apertures fluidically coupled to the gas distribution holes. In one embodiment, the housing further includes a second aperture through the electrically conductive body, the second aperture intersecting the channel.

[0010] Embodiments can also include a processing tool. In one embodiment, the processing tool includes a chamber and an assembly interfaced with the chamber. In one embodiment, the assembly includes a monolithic source array having a plurality of protrusions and a plurality of gas distribution holes through a thickness of the monolithic source array. In one embodiment, the monolithic source array further includes a housing having an electrically conductive body and an opening through the electrically conductive body for accommodating the plurality of protrusions. In one embodiment, a channel in the electrically conductive body is fluidically coupled to the gas distribution holes. BRIEF DESCRIPTION OF DRAWINGS

[0011] Figure 1 is a schematic illustration of a processing tool according to one embodiment, the processing tool including a modular high frequency emitting source having a monolithic source array including a plurality of applicators.

[0012] Figure 2 is a block diagram of a modular high frequency emitting module according to one embodiment.

[0013] Figure 3 is an exploded perspective view of an assembly according to one embodiment.

[0014] Figure 4A is a plan view illustration of a lid and gas distribution line according to one embodiment.

[0015] Figure 4B is a cross-sectional view illustration of the lid in Figure 4A along line B-B' according to one embodiment.

[0016] Figure 5A is a perspective view illustration of a bottom surface of a conductive enclosure according to one embodiment.

[0017] Figure 5B is a cross-sectional view illustration of the conductive enclosure in Figure 5A along line B-B' according to one embodiment.

[0018] Figure 6 is a cross-sectional view illustration of a portion of an assembly according to one embodiment, more clearly showing the gas distribution network.

[0019] Figure 7 is a cross-sectional view illustration of a processing tool according to one embodiment, the processing tool including an assembly having an integrated gas distribution network.

[0020] Figure 8 shows a block diagram of an exemplary computer system that can be used in conjunction with a high frequency plasma tool according to one embodiment. DETAILED DESCRIPTION

[0021] The systems described herein include monolithic source arrays for high frequency sources with integrated gas distribution. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the embodiments. It will be apparent, however, to one skilled in the art that the embodiments can be practiced without some or all of these specific details. In other instances, well known aspects have not been described in detail so as not to unnecessarily obscure the embodiments. Also, it is to be understood that the various embodiments shown in the figures are illustrative representations and are not necessarily drawn to scale.

[0022] As described above, high frequency plasma sources with discrete applicators can result in non-uniform plasma within the chamber, as well as non-optimal injection of high frequency electromagnetic radiation into the chamber. Non-uniformity in the plasma can occur for different reasons, such as assembly issues, manufacturing tolerances, degradation, and the like. Non-optimal injection of high frequency electromagnetic radiation into the chamber can be caused, in part, by the interface between the applicator and the dielectric plate.

[0023] Accordingly, embodiments disclosed herein include a monolithic source array. In one embodiment, the monolithic source array includes a dielectric plate and a plurality of protrusions extending upward from a surface of the dielectric plate. In particular, the protrusions and the dielectric plate form a monolithic component. That is, the protrusions and the dielectric plate are made from a single piece of material. The protrusions are sized to function as applicators. For example, holes can be manufactured into the protrusions to accommodate monopole antennas. Accordingly, the protrusions can function as dielectric cavity resonators.

[0024] Implementing the source array as a monolithic component has a number of advantages. One benefit is that tight manufacturing tolerances can be maintained in order to provide a high degree of uniformity between parts. Discrete applicators require assembly, whereas a monolithic source array avoids potential assembly variations. Additionally, using a monolithic source array can improve the ability to inject high frequency electromagnetic radiation into the chamber because there is no longer a physical interface between the applicators and the dielectric plate.

[0025] The monolithic source array also provides improved plasma uniformity in the chamber. In particular, the surface of the dielectric plate that is exposed to the plasma does not include any gaps to accommodate applicators. Furthermore, the lack of a physical interface between the protrusions and the dielectric plate improves the spreading of the transverse electric field in the dielectric plate.

[0026] The monolithic source array also requires a different gas distribution scheme than previous solutions. Previously, gas flowed into the chamber through openings in the dielectric plate that accommodated the applicators. Because these openings have been removed, a different solution is required. Accordingly, embodiments disclosed herein include a gas distribution scheme that is implemented by different components of the assembly. For example, horizontal distribution of gas can be implemented in an outer housing that surrounds the monolithic source array. Accordingly, only vertical gas distribution holes need to be drilled into the monolithic source array. That is, in some embodiments, the monolithic source array does not require horizontal gas routing channels. This simplifies the manufacturing of the monolithic source array and reduces costs.

[0027] Reference will now be made to Figure 1A cross-sectional illustration of a plasma processing tool 100 according to one embodiment is shown. In some embodiments, the processing tool 100 can be any type of processing tool suitable for processing operations utilizing plasma. For example, the processing tool 100 can be a processing tool for plasma enhanced chemical vapor deposition (PECVD), plasma enhanced atomic layer deposition (PEALD), etch and selective removal processes, and plasma cleaning. Additional embodiments can include processing tools 100 that utilize high frequency electromagnetic radiation without generating plasma (e.g., microwave heating, etc.). As used herein, "high frequency" electromagnetic radiation includes radio frequency radiation, very-high-frequency radiation, ultra-high-frequency radiation, and microwave radiation. "High frequency" can refer to frequencies between 0.1 MHz and 300 GHz.

[0028] In general, embodiments include a processing tool 100 that includes a chamber 178. In the processing tool 100, the chamber 178 can be a vacuum chamber. The vacuum chamber can include a pump (not shown) for removing gas from the chamber to provide a desired vacuum. Additional embodiments can include a chamber 178 that includes one or more gas lines 170 for providing process gas into the chamber 178 and an exhaust line 172 for removing byproducts from the chamber 178. Although not shown, it is understood that gas can also be injected into the chamber 178 by a monolithic source array 150 (e.g., as a showerhead) for uniformly distributing process gas over a substrate 174.

[0029] In one embodiment, the substrate 174 can be supported on a chuck 176. For example, the chuck 176 can be any suitable chuck, such as an electrostatic chuck. The chuck 176 can also include cooling lines and / or a heater to provide temperature control to the substrate 174 during processing. Due to the modular configuration of the high frequency launch module described herein, embodiments allow the processing tool 100 to accommodate any size of substrate 174. For example, the substrate 174 can be a semiconductor wafer (e.g., 200 mm, 300 mm, 450 mm, or larger). Alternative embodiments also include substrates 174 other than semiconductor wafers. For example, embodiments can include a processing tool 100 configured for processing glass substrates (e.g., for display technology).

[0030] According to one embodiment, the processing tool 100 includes a modular high frequency emission source 104. The modular high frequency emission source 104 can include an array of high frequency emission modules 105. In one embodiment, each high frequency emission module 105 can include an oscillator module 106, an amplification module 130, and an applicator 142. As shown, the applicators 142 are schematically shown as integrated into a monolithic source array 150. However, it is understood that the monolithic source array 150 can be a monolithic structure that includes one or more portions of the applicators 142 (e.g., dielectric resonant bodies) and a dielectric plate facing the interior of the chamber 178.

[0031] In one embodiment, the oscillator modules 106 and the amplification modules 130 can include electrical components that are solid state electrical components. In one embodiment, each of the plurality of oscillator modules 106 can be communicatively coupled to a different amplification module 130. In some embodiments, the ratio between oscillator modules 106 and amplification modules 130 can be 1 : 1. For example, each oscillator module 106 can be electrically coupled to a single amplification module 130. In one embodiment, the plurality of oscillator modules 106 can generate incoherent electromagnetic radiation. Thus, the induced electromagnetic radiation in the chamber 178 will not interact in a manner that creates undesirable interference patterns.

[0032] In one embodiment, each oscillator module 106 generates high frequency electromagnetic radiation that is transmitted to an amplification module 130. After processing by the amplification module 130, the electromagnetic radiation is transmitted to an applicator 142. In one embodiment, the applicators 142 each emit the electromagnetic radiation into the chamber 178. In some embodiments, the applicators 142 couple the electromagnetic radiation to a process gas in the chamber 178 to generate a plasma.

[0033] Reference will now be made to Figure 2FIG. 1 shows a schematic diagram of a solid state high frequency transmission module 105, according to one embodiment. In one embodiment, the high frequency transmission module 105 includes an oscillator module 106. The oscillator module 106 can include a voltage control circuit 210 for providing an input voltage to a voltage controlled oscillator 220 to produce high frequency electromagnetic radiation at a desired frequency. Embodiments can include an input voltage between about 1 V and 10 V DC. The voltage controlled oscillator 220 is an electronic oscillator whose frequency of oscillation is controlled by an input voltage. According to one embodiment, the input voltage from the voltage control circuit 210 causes the voltage controlled oscillator 220 to oscillate at a desired frequency. In one embodiment, the high frequency electromagnetic radiation can have a frequency between about 0.1 MHz and 30 MHz. In one embodiment, the high frequency electromagnetic radiation can have a frequency between about 30 MHz and 300 MHz. In one embodiment, the high frequency electromagnetic radiation can have a frequency between about 300 MHz and 1 GHz. In one embodiment, the high frequency electromagnetic radiation can have a frequency between about 1 GHz and 300 GHz.

[0034] According to one embodiment, the electromagnetic radiation is transmitted from the voltage controlled oscillator 220 to an amplification module 130. The amplification module 130 can include a driver / pre-amplifier 234 and a main power amplifier 236, each coupled to a power supply 239. According to one embodiment, the amplification module 130 can be operated in a pulsed mode. For example, the amplification module 130 can have a duty cycle between 1% and 99%. In a more particular embodiment, the amplification module 130 can have a duty cycle between about 15% and 50%.

[0035] In one embodiment, electromagnetic radiation can be delivered to the heat sink 249 and applicator 142 after being processed by the amplification module 130. However, due to a mismatch in output impedance, a portion of the power delivered to the heat sink 249 can be reflected back. Therefore, some embodiments include a detector module 281 that allows the level of forward power 283 and reflected power 282 to be sensed and fed back to the control circuit module 221. It is to be understood that the detector module 281 can be located at one or more different locations in the system (e.g., between the circulator 238 and the heat sink 249). In one embodiment, the control circuit module 221 interprets the forward power 283 and reflected power 282 and determines the level of control signal 285 that is communicated to the oscillator module 106 and the level of control signal 286 that is communicated to the amplification module 130. In one embodiment, the control signal 285 adjusts the oscillator module 106 to optimize the high frequency radiation coupled to the amplification module 130. In one embodiment, the control signal 286 adjusts the amplification module 130 to optimize the output power coupled to the applicator 142 through the heat sink 249. In one embodiment, in addition to tailoring the impedance match in the heat sink 249, feedback control of the oscillator module 106 and the amplification module 130 can allow the level of reflected power to be less than about 5% of the forward power. In some embodiments, feedback control of the oscillator module 106 and the amplification module 130 can allow the level of reflected power to be less than about 2% of the forward power.

[0036] Therefore, embodiments allow the percentage of forward power to be coupled into the process chamber 178 to be increased, and the available power coupled to the plasma is increased. Also, impedance adjustment using feedback control is superior to impedance adjustment in a typical slot-plate antenna. In a slot-plate antenna, impedance adjustment involves moving two dielectric blocks formed in the applicator. This involves mechanical movement of two separate components in the applicator, which increases the complexity of the applicator. Also, mechanical movement can not be as precise as frequency changes that can be provided by a voltage controlled oscillator 220.

[0037] Referring now to Figure 3 , an exploded perspective view of an assembly 370 is shown in accordance with one embodiment. In one embodiment, the assembly 370 includes the monolithic source array 350, a housing 372, and a cover plate 376. As shown by the arrows, the housing 372 fits over and around the monolithic source array 350, and the cover plate 376 covers the housing 372. In the embodiment shown, the assembly 370 is shown as having a substantially circular shape. However, it is to be understood that the assembly 370 can have any desired shape (e.g., polygonal, oval, wedge-shaped, or the like).

[0038] In one embodiment, the monolithic source array 350 includes a dielectric plate 360 and a plurality of protrusions 366 extending upwardly from the dielectric plate 360. In one embodiment, the dielectric plate 360 and the plurality of protrusions 366 are a monolithic structure. That is, there is no physical interface between the bottom of the protrusions 366 and the dielectric plate 360. As used herein, a "physical interface" refers to a first surface of a first discrete body contacting a second surface of a second discrete body.

[0039] Each of the protrusions 366 is a part of the applicator 142 for injecting high frequency electromagnetic radiation into the processing chamber 178. In particular, the protrusions 366 act as dielectric cavity resonators for the applicator 142. In one embodiment, the monolithic source array 350 includes a dielectric material. For example, the monolithic source array 350 can be a ceramic material. In one embodiment, one suitable ceramic material that can be used for the monolithic source array 350 is AI2O3. The monolithic structure can be fabricated from a single piece of material. In other embodiments, a rough shape of the monolithic source array 350 can be formed using a molding process, and then the rough shape can be machined to provide the final structure having the desired dimensions. For example, green state machining and firing can be used to provide the desired shape of the monolithic source array 350. In the illustrated embodiment, the protrusions 366 are shown as having a circular cross-section (when viewed along a plane parallel to the dielectric plate 360). However, it should be understood that the protrusions 366 can include a number of different cross-sections. For example, the cross-section of the protrusions 366 can have any shape that is centrally symmetric.

[0040] In one embodiment, the housing 372 includes an electrically conductive body 373. For example, the electrically conductive body 373 can be aluminum or the like. The housing includes a plurality of openings 374. The openings 374 can extend completely through the thickness of the electrically conductive body 373. The openings 374 can be sized to receive the protrusions 366. For example, as the housing 372 is displaced toward the monolithic source array 350 (as indicated by the arrow), the protrusions 466 will be inserted into the openings 374. In one embodiment, the openings 374 can have a diameter of about 15 mm or more.

[0041] In the illustrated embodiment, the housing 372 is shown as a single electrically conductive body 373. However, it should be understood that the housing 372 can include one or more discrete electrically conductive components. The discrete components can be individually grounded, or the discrete components can be joined, either mechanically or through any form of metallic bonding, to form a single electrically conductive body 373.

[0042] In one embodiment, the cover plate 376 can include a conductive body 379. In one embodiment, the conductive body 379 is formed of the same material as the conductive body 373 of the housing 372. For example, the cover plate 376 can include aluminum. In one embodiment, any suitable fastening mechanism can be used to secure the cover plate 376 to the housing 372. For example, bolts or the like can be used to secure the cover plate 376 to the housing 372. In some embodiments, the cover plate 376 and the housing 372 can also be implemented as a single monolithic structure. In one embodiment, both the cover plate 376 and the housing are electrically grounded during operation of the processing tool.

[0043] Referring now to Figure 4A and Figure 4B , respectively, illustrate more detailed plan and cross-sectional views of a cover plate 476, according to one embodiment. As shown, gas lines are coupled to a first surface 412 of the cover plate 476. For example, a single input 415 can be split into a plurality of first gas lines 417A-C. Each of the first gas lines 417 can be further distributed to second gas lines 418A-F at a splitter 413. The second gas lines 418 are coupled to the cover plate 476 (e.g., by bolts to couplings 419 of the cover plate 476). In one embodiment, the couplings 419 can secure O-rings (not shown) that seal the junction between the end of the second gas lines 418 and the holes 414 through the cover plate 476. As shown in Figure 4B , the holes 414 pass through a conductive body 479 from the first surface 412 to a second surface 411 of the cover plate 476.

[0044] In one embodiment, the length of each of the first gas lines 417 is substantially the same, and the length of each of the second gas lines 418 is substantially the same. In this way, the length of each path (from the input 415 to one of the holes 414 in the cover plate 476) is substantially uniform. Although one example of a gas line routing scheme is provided, it should be understood that any number of holes 414 and any number of gas lines 417 / 418 can be used to direct process gas to the cover plate 476.

[0045] Referring now to Figure 5A , a perspective view illustration of a housing 572 is shown, according to one embodiment. The embodiment shown depicts a second surface 533 of the housing 572. The second surface 533 is the surface that faces the monolithic source array, while the first surface 534 faces the cover plate. As shown, the housing 572 includes a conductive body 573 having a plurality of openings 574.

[0046] In one embodiment, a plurality of gas distribution channels are disposed in the second surface 533. The gas distribution channels are covered by the lid 531. In one embodiment, the lid 531 is welded to the electrically conductive body 573 to provide a gas-tight seal. The gas distribution channels and the lid 531 distribute gas from the outer periphery of the enclosure 572 to the axial center of the enclosure 572. In the illustrated embodiment, each gas distribution channel and lid 531 encircles one or more openings 574. However, it should be appreciated that other embodiments can include gas distribution channels that take any path. In the illustrated embodiment, a single continuous gas distribution channel and lid 531 is shown. However, it should be appreciated that embodiments can include any number of gas distribution channels (e.g., one or more that can or can not be fluidically coupled together), and each gas distribution channel can have a different lid. Further, it should be appreciated that the openings 574 and the gas distribution channels are not fluidically coupled to one another. That is, during operation, process gas flows through the gas distribution channels, and the process gas can not pass through the openings 574.

[0047] In one embodiment, the groups 532 of first holes 537 can pass through the lid 531. The groups 532 of first holes 537 provide exit locations for gas within the gas distribution channels. In one embodiment, the number of first holes 537 in each group 532 can be non-uniform. For example, the group 532A can have one or two holes 537, the group 532B can have three or four holes 537, and the group 532C can have more than four holes 537. That is, locations closer to the axial center of the enclosure 572 can have groups with a greater number of holes 537 than locations closer to the periphery of the enclosure 572. In one embodiment, each group 532 can be surrounded by an O-ring or other sealing member. The O-rings press against the monolithic source array to provide a seal.

[0048] Referring now to Figure 5B , a cross-sectional view of the enclosure 572 in Figure 5A along line B-B' is shown according to one embodiment. The cross-sectional view more clearly shows the gas distribution channels 530. The channels 530 are recessed into the second surface 533 of the electrically conductive body 573. In the cross-sectional view, the channels 530 are shown as discontinuous, but it should be appreciated that portions of the channels 530 can wrap around the openings 574 outside the plane of Figure 5B to fluidly couple portions of the channels 530 together. For example, the illustrated portions of the channels 530A are fluidly coupled together, while the illustrated portions of the channels 530B are fluidly coupled together.

[0049] In one embodiment, process gas is supplied to the channel 530 from a second hole 535 that passes through the electrically conductive body 573 perpendicularly. That is, the second hole 535 intersects the channel 530. The second hole 535 can be fluidically coupled to the hole 414 through the cover plate 476. In one embodiment, the second hole 535 is located near an edge of the enclosure 572, and the channel 530 distributes process gas horizontally. The cover 531 is over the channel 530 and provides a seal except at the location of the group 532 of first holes 537. The groups 532B and 532C are visible in the illustrated cross-section, and the group 532A is out of the illustrated plane. The distribution of the groups 532 of first holes 537 along the channel 530 provides uniform gas distribution across the workpiece surface in the processing tool. Figure 5B The distribution of the groups 532 of first holes 537 along the channel 530 provides uniform gas distribution across the workpiece surface in the processing tool.

[0050] Referring now to Figure 6 , a cross-sectional illustration of a portion of an assembly 670 is shown, according to one embodiment. The assembly 670 includes a monolithic source array 650, an enclosure 672, and a cover plate 676.

[0051] In one embodiment, the second surface 633 of the electrically conductive body 673 is supported by the first surface 661 of the dielectric plate 660. In the illustrated embodiment, the electrically conductive body 673 is directly supported by the first surface 661, but it should be understood that a thermal interface material or the like can separate the electrically conductive body 673 from the first surface 661. In one embodiment, the second surface 662 of the dielectric plate 660 faces away from the enclosure 672. The protrusion 666 of the monolithic source array 650 fits into an opening in the enclosure 672. In one embodiment, the cover plate 676 covers the enclosure 672 and the protrusion 666. For example, the second surface 611 of the cover plate 676 covers the first surface 634 of the enclosure 672. The monopole antenna 668 can pass through the cover plate 676 and extend into a hole 665 in the axial center of the protrusion 666. The width of the hole 665 can be greater than the width of the monopole antenna 668. Thus, in some embodiments, a tolerance for thermal expansion is provided to prevent damage to the monolithic source array 650. The monopole antenna 668 is electrically coupled to a power source (e.g., the high frequency launch module 105).

[0052] In one embodiment, a gas distribution network passes through the components of the assembly 670. Initially, gas is fed into the assembly 670 through the gas line 618. The gas line 618 is coupled to the first surface 612 of the cover plate 676 through the coupler 619. An O-ring (not shown) can be located between the coupler 619 and the first surface 612. The process gas then travels through the hole 614 that passes through the cover plate 676. Gas distribution continues through the hole 635 that passes through the electrically conductive body 673 of the enclosure 672. In one embodiment, an O-ring or the like (not shown) can surround the interface between the hole 614 and the hole 635 to provide a seal.

[0053] As shown, holes 635 intersect with passages 630. Passages 630 distribute process gas laterally. Passages 630 are sealed by lid 631 and gas is distributed out of enclosure 672 through a group 632 of holes 637 in lid 631. In one embodiment, the gas then flows through holes 663 through dielectric plate 660. Holes 663 can be aligned with holes 637 in group 632. In one embodiment, the diameter of holes 663 through dielectric plate 660 is larger than the diameter of holes 637 through lid 631. In one embodiment, an O-ring or the like (not shown) surrounds the interface between holes 637 in lid 631 and holes 663 through dielectric plate 660.

[0054] Referring now to Figure 7 , a cross-sectional illustration of a processing tool 700 including an assembly 770 is shown, in accordance with an embodiment. In one embodiment, the processing tool includes a chamber 778 sealed by assembly 770. For example, assembly 770 can abut against one or more O-rings 781 to provide a vacuum seal to an interior volume 783 of chamber 778. In other embodiments, assembly 770 can interface with chamber 778. That is, assembly 770 can be part of a lid sealing chamber 778. In one embodiment, processing tool 700 can include multiple processing volumes (which can be fluidically coupled together) each having a different assembly 770. In one embodiment, a chuck 779 or the like can support a workpiece 774 (e.g., a chip, a substrate, etc.).

[0055] In one embodiment, assembly 770 can be substantially similar to assembly 670 described above. For example, assembly 770 includes a monolithic source array 750, a housing 772, and a cover plate 776. Monolithic source array 750 can include a dielectric plate 760 and a plurality of tabs 766 extending upwardly from dielectric plate 760. Housing 772 can have openings sized to receive tabs. In one embodiment, a monopole antenna 768 can extend into a hole 765 in tab 766. Monopole antenna 568 can pass through housing 772 and over tabs 766.

[0056] In one embodiment, the chamber volume 783 can be adapted to strike the plasma 782. That is, the chamber volume 783 can be a vacuum chamber. To strike the plasma 782, a process gas can be flowed into the chamber volume 783. The process gas can enter the assembly 770 via the gas line 718. The process gas then passes through the holes 714 of the cover plate 776 and into the holes 735 in the housing 772. The holes 735 intersect with the gas distribution passages 730, which laterally distribute the process gas. The process gas exits the passages 730 through the group 732 of holes 737 in the cover over the passages 730. The process gas then passes through the gas distribution holes 763, which pass through the dielectric plate 760 of the single wafer source array 750 and into the chamber volume 783.

[0057] Referring now to the drawings Figure 8 , a block diagram of an exemplary computer system 860 of a processing tool is shown, in accordance with one embodiment. In one embodiment, the computer system 860 is coupled to and controls processing in a processing tool. The computer system 860 can be connected, e.g., networked, to other machines in a Local Area Network (LAN), an intranet, an extranet, or the Internet. The computer system 860 can operate in the capacity of a server or a client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. The computer system 860 can be a personal computer (PC), a tablet PC, a set-top box (STB), a Personal Digital Assistant (PDA), a cellular telephone, a web appliance, a server, a network router, switch or bridge, or any machine capable of executing a set of instructions (sequential or other

[0058] The computer system 860 can include a computer program product or software 822 having a non-transitory machine-readable medium (or more than one medium) having instructions 824 stored on it, which can be used to program a computer system (or other electronic devices) to perform a process according to the present embodiments. A machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer). For example, a machine-readable (e.g., computer-readable) medium includes a machine (e.g., a computer) readable storage medium (e.g., read only memory ("ROM"), random access memory ("RAM"), magnetic disk storage media, optical storage media, flash memory devices, etc.), a machine (e.g., computer) readable transmission medium (electrical, optical, acoustical or other form of propagated signals (e.g., infrared signals, digital signals, etc.)), etc.

[0059] In one embodiment, the computer system 860 includes a processor 802, a main memory 804 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM) (such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM), etc.), a static memory 806 (e.g., flash memory, static random access memory (SRAM), etc.), and a secondary memory 818 (e.g., a data storage device), which communicate with each other via a bus 830.

[0060] The system processor 802 represents one or more general-purpose processing devices such as a microprocessor, central processing unit, or the like. More particularly, the system processor can be a complex instruction set computing (CISC) microprocessor, reduced instruction set computing (RISC) microprocessor, very long instruction word (VLIW) microprocessor, system processor implementing other instruction sets, or system processors implementing a combination of instruction sets. The system processor 802 can also be one or more special-purpose processing devices such as an application specific integrated circuit (ASIC), a field programmable logic array (FPGA), a digital signal system processor (DSP), network system processor, or the like. The system processor 802 is configured to execute the processing logic 826 for performing the operations described herein.

[0061] The computer system 860 can further include a system network interface device 808 to communicate with other devices or machines. The computer system 860 can also include a video display unit 810 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 812 (e.g., a keyboard), a cursor control device 614 (e.g., a mouse), and a signal generation device 816 (e.g., a speaker).

[0062] Auxiliary memory 818 can include a machine-accessible storage medium 832 (or more specifically, a computer-readable storage medium) on which is stored one or more sets of instructions (e.g., software 822) embodying any one or more of the methodologies or functions described herein. The software 822 can also reside, completely or at least partially, within the main memory 804 and / or within the system processor 802 during execution thereof by the computer system 860, the main memory 804 and the system processor 802 also constituting machine-readable storage media. The software 822 can further be transmitted or received over a network 820 via the system network interface device 808. In one embodiment, the network interface device 808 can operate using RF coupling, optical coupling, acoustic coupling, or inductive coupling.

[0063] While the machine-accessible storage medium 832 is shown in an example embodiment to be a single medium, the phrase "machine-readable storage medium" should be taken to include a single medium or multiple media (e.g., a centralized or distributed database, and / or associated caches and servers) that store the one or more sets of instructions. The phrase "machine-readable storage medium" shall also be taken to include any medium that is capable of storing or encoding a set of instructions for execution by the machine and that cause the machine to perform any one or more of the methodologies

[0064] In the foregoing specification, specific exemplary embodiments have been described. It will be apparent, however, that various modifications can be made to the embodiments without departing from the scope of the following claims. Accordingly, the specification is to be regarded in an illustrative rather than a restrictive sense, and all such modifications are intended to be included within the scope of the application.

Claims

1. A housing for a source array, comprising: A conductor, wherein the conductor includes a first surface and a second surface opposite to the first surface, wherein the conductor is conductive; Multiple openings through the conductor, wherein the multiple openings have vertical sidewalls extending through the thickness of the conductor, the vertical sidewalls having a uniform width; Multiple channels are disposed in the second surface of the conductor, wherein the channels are composed of multiple circular portions and linear portions, the linear portions intersecting at the circular portions, and wherein for each of the multiple circular portions of the channel and each of the multiple openings through the conductor, only a single corresponding circular portion of the multiple circular portions continuously surrounds the entirety of only a single corresponding opening of the multiple openings; A cover, above the channel, wherein the cover includes a first hole extending through the thickness of the cover; and A second hole extends through the thickness of the conductor, wherein the second hole intersects the channel, and wherein the second hole is fluidly coupled to the channel.

2. The housing as claimed in claim 1, wherein the cover is welded to the conductor.

3. The housing as claimed in claim 1, wherein the second hole is farther from the axial center of the conductor than the first hole.

4. The housing of claim 1, wherein the first holes are arranged in a plurality of groups, wherein the first group has a first number of first holes, and wherein the second group has a second number of first holes, the second number being greater than the first number.

5. The housing of claim 4, wherein the first group is farther from the axial center of the conductor than the second group.

6. The housing as claimed in claim 1, wherein the diameter of each opening is 15 mm or greater.

7. The housing as claimed in claim 1, further comprising: Multiple channels, the multiple channels entering the second surface of the conductor; as well as Multiple second holes, wherein each second hole intersects with a different channel among the multiple channels.

8. The housing as claimed in claim 7, further comprising: A cover plate above the first surface of the conductor.

9. The housing as claimed in claim 8, further comprising: Through a plurality of third holes in the cover plate, each of which is fluidly coupled to a different one of the second holes.

10. The housing of claim 9, wherein the plurality of third holes are fluidly coupled to a gas inlet via a plurality of gas lines.

11. The housing of claim 10, wherein the distance between the gas lines along the gas inlet and each of the third holes is substantially uniform.

12. A component for processing a tool, comprising: A monolithic source array, wherein the monolithic source array comprises: A dielectric substrate, wherein the dielectric substrate includes a first surface and a second surface opposite to the first surface; Multiple protrusions extend from the first surface of the dielectric plate; and Multiple gas distribution holes extend from the first surface of the dielectric plate to the second surface; and A housing attached to the monolithic source array, wherein the housing comprises: A conductor, wherein the conductor includes a third surface and a fourth surface opposite to the third surface, wherein the conductor is conductive; Multiple openings through the conductor, each of the openings surrounding a different one of the multiple protrusions, wherein the multiple openings have vertical sidewalls extending through the thickness of the conductor, the vertical sidewalls having a uniform width; Multiple channels enter the fourth surface of the conductor, wherein each channel is composed of multiple circular portions and linear portions, and the linear portions intersect at the circular portions; A cover, above the channel, wherein the cover includes a plurality of first holes, each of which is fluidly coupled to a gas distribution hole; and A second hole passes through the conductor, wherein the second hole intersects with the channel, and wherein the second hole is fluidly coupled to the channel.

13. The component of claim 12, further comprising: A cover plate above the third surface of the conductor.

14. The component of claim 13, further comprising: A third hole through the cover plate, wherein the third hole is fluidly coupled to the second hole.

15. The component of claim 13, wherein the cover plate is bolted to the conductor.

16. The component of claim 12, wherein the channel surrounds at least one of the openings.

17. A processing tool for semiconductor manufacturing, comprising: Chamber; as well as Components, which interface with the chamber, wherein the components include: A monolithic source array, wherein the monolithic source array includes a plurality of protrusions and a plurality of gas distribution holes extending through the thickness of the monolithic source array; and Housing, wherein the housing comprises: A conductor, wherein the conductor is conductive; An opening, extending through the conductor, is provided to receive the plurality of protrusions, wherein the plurality of openings have vertical sidewalls extending through the thickness of the conductor, the vertical sidewalls having a uniform width; and Multiple channels are provided in the conductor, wherein each channel is composed of multiple circular portions and linear portions, the linear portions intersecting at the circular portions, and wherein the channels are fluidly coupled to the gas distribution orifice.

18. The processing tool of claim 17, further comprising: A cover plate, on the housing, wherein the cover plate includes a hole that passes through the cover plate and is fluidly coupled to the channel.

19. The processing tool of claim 17, wherein the channel surrounds at least one of the openings passing through the conductor.

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