Display device

Abstract

A display device includes a first substrate, a first circuit structure, and multiple light-emitting element packaging structures. The first circuit structure is located above the first substrate and has multiple openings. The multiple light-emitting element packaging structures are located above the first circuit structure. Each light-emitting element packaging structure includes a second substrate and at least one light-emitting element. The light-emitting element is located between the second substrate and the first substrate, emits light toward the first substrate, and overlaps with a corresponding opening in the first circuit structure. The width of the corresponding opening near the first substrate is greater than the width of the corresponding opening near the second substrate.

Description

Technical Field

[0001] The present invention relates to a display device. Background Art

[0002] Micro LED displays (micro light emitting device displays, or micro LED displays) are a next-generation display technology. The key lies in utilizing mass transfer technology to transfer micro LEDs onto circuit substrates. However, mass transfer technology is a mechanical operation, and its effectiveness depends on the precision of the machine and the transfer device itself. Improper placement of the micro LEDs will result in malfunction. Furthermore, improving the luminous efficiency of micro LEDs is a topic of considerable research interest. Summary of the Invention

[0003] An object of the present invention is to provide a display device capable of increasing the brightness of the display device.

[0004] At least one embodiment of the present invention provides a display device. The display device includes a first substrate, a first circuit structure, and multiple light-emitting element packaging structures. The first circuit structure is located above the first substrate and has multiple openings. The multiple light-emitting element packaging structures are located above the first circuit structure. Each light-emitting element packaging structure includes a second substrate and at least one light-emitting element. The light-emitting element is located between the second substrate and the first substrate, emits light toward the first substrate, and overlaps with a corresponding opening in the first circuit structure. The width of the corresponding opening near the first substrate is greater than the width of the corresponding opening near the second substrate.

[0005] The beneficial effect of the present invention is that the width of the opening of the first circuit structure near the first substrate is greater than the width of the opening near the second substrate, thereby allowing the light emitted by the light-emitting element to be better reflected to the first substrate, so that the display device has higher brightness. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1A is a schematic top view of a display device according to an embodiment of the present invention.

[0007] Figure 1B It is along Figure 1A Schematic cross-sectional view of line a-a'.

[0008] Figures 2A to 2J is a cross-sectional schematic diagram of a method for manufacturing a display device according to an embodiment of the present invention.

[0009] Figures 3A to 3Gis a cross-sectional schematic diagram of a method for manufacturing a display device according to an embodiment of the present invention.

[0010] Figures 4A to 4G is a cross-sectional schematic diagram of a method for manufacturing a display device according to an embodiment of the present invention.

[0011] Figure 5 is a cross-sectional schematic diagram of a display device according to an embodiment of the present invention.

[0012] The reference numerals are as follows:

[0013] 10, 20, 30, 40: Display device

[0014] 100: first substrate

[0015] 200, 200a, 200b, 200c: First circuit structure

[0016] 210, 210a, 210b: Insulation structure

[0017] 211: first insulating layer

[0018] 212: First side

[0019] 213: Second insulation layer

[0020] 214: Side 2

[0021] 216,432: Open

[0022] 218: Contact hole

[0023] 220: First circuit layer

[0024] 220': first conductive material

[0025] 222:Signal line

[0026] 224:Reflection layer

[0027] 230: Second circuit layer

[0028] 230': second conductive material

[0029] 232: Connecting electrodes

[0030] 234: conductive hole

[0031] 240: Third circuit layer

[0032] 300,300a: Light-emitting element packaging structure

[0033] 310: Second substrate

[0034] 320: Light-emitting element

[0035] 330, 330a: Second circuit structure

[0036] 332: First pad

[0037] 334: Second pad

[0038] 336: Groove

[0039] 410: Light-shielding layer

[0040] 420: first covering layer

[0041] 420': first covering material layer

[0042] 430: Second covering layer

[0043] 430': second covering material layer

[0044] 510: first conductive connection structure

[0045] 520: second conductive connection structure

[0046] H: Opening

[0047] O: Open

[0048] P: protrusion

[0049] SC: Sacrificial layer

[0050] T1, T2: thickness

[0051] TH:Through hole

[0052] W1, W2, W3: width

[0053] θ: Angle DETAILED DESCRIPTION

[0054] In this disclosure, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element, as shown in the figures. It should be understood that relative terms are intended to include different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one figure is turned over, the element described as being on the "lower" side of the other elements will be oriented on the "upper" side of the other elements. Thus, the exemplary term "lower" can include both "lower" and "upper" orientations, depending on the particular orientation of the figure. Similarly, if the device in one figure is turned over, the element described as being "below" or "beneath" the other elements will be oriented as being "above" the other elements. Thus, the exemplary term "below" or "below" can include both "upper" and "lower" orientations.

[0055] Figure 1Ais a schematic top view of a display device according to an embodiment of the present invention. Figure 1B It is along Figure 1A It should be noted that, for the convenience of explanation, Figure 1A Omitted Figure 1B Some components in .

[0056] Please refer to Figure 1A and Figure 1B The display device 10 includes a first substrate 100 , a first circuit structure 200 , and a plurality of light emitting element packaging structures 300 . In this embodiment, the display device 10 further includes a plurality of light shielding layers 410 , a first covering layer 420 , and a second covering layer 430 .

[0057] The first substrate 100 is a transparent substrate, and its material includes glass, quartz, organic polymer or other applicable materials.

[0058] The light shielding layer 410 is located above the first substrate 100. The light shielding layer 410 is a light-absorbing material and includes black photoresist, resin, chromium, or other suitable materials. In this embodiment, the light shielding layer 410 directly contacts the upper surface of the first substrate 100, but the present invention is not limited to this. In other embodiments, a buffer layer or other insulating layer is further included between the light shielding layer 410 and the first substrate 100. In this embodiment, the light shielding layer 410 has a plurality of through holes TH. The first covering layer 420 is located on the light shielding layer 410. The first covering layer 420 includes, for example, an insulating material.

[0059] The first circuit structure 200 is located above the first substrate 100. In this embodiment, the first circuit structure 200 is located on the first cover layer 420. The first circuit structure 200 has a plurality of openings H. The through holes TH of the light shielding layer 410 overlap with the openings H of the first circuit structure 200. In some embodiments, the width of the through holes TH of the light shielding layer 410 is greater than the width of the openings H of the first circuit structure 200. In some embodiments, the first cover layer 420 extends from the upper surface of the first substrate 100 along the sidewalls of the openings H of the first circuit structure 200 and away from the upper surface of the first substrate 100. A portion of the first cover layer 420 is located between the first substrate 100 and the first circuit structure 200, and another portion of the first cover layer 420 is located within the openings H of the first circuit structure 200.

[0060] The first circuit structure 200 includes an insulating structure 210 , a first circuit layer 220 and a second circuit layer 230 .

[0061] The insulating structure 210 has a first surface 212 facing the first substrate 100 and a second surface 214 facing away from the first surface 212. The insulating structure 210 may be a single-layer or multi-layer structure. In some embodiments, the insulating structure 210 comprises silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, hafnium oxide, zirconium oxide, an organic insulating material, a combination of the foregoing, or other insulating materials. In some embodiments, the final overall thickness T1 of the insulating structure 210 is preferably 4 to 10 microns, but is not limited thereto. In other embodiments, the overall thickness T1 of the insulating structure 210 may be less than 4 microns or greater than 10 microns.

[0062] The first circuit layer 220 is located on the first surface 212 of the insulating structure 210. In some embodiments, the first circuit layer 220 is located on the first cover layer 420 and is separated from the light shielding layer 410 by the first cover layer 420. The first circuit layer 220 has a single-layer or multi-layer structure. In some embodiments, the first circuit layer 220 includes a metal such as chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc, alloys thereof, metal oxides thereof, metal nitrides thereof, combinations thereof, or other conductive materials.

[0063] In some embodiments, the insulating structure 210 includes or does not include a reflective material. When the insulating structure 210 does not include a reflective material, the first circuit layer 220 includes a plurality of signal lines 222 located on the first side 212 of the insulating structure 210 and a plurality of reflective layers 224 located on the sidewalls of the opening H. The reflective layers 224 are single-layer or multi-layer structures. In some embodiments, the signal lines 222 and the reflective layers 224 belong to the same conductive layer. In other words, the signal lines 222 and the reflective layers 224 are formed by patterning the same layer of conductive material. In some embodiments, the reflective layers 224 extend from the sidewalls of the opening H to the first side 212 of the insulating structure 210.

[0064] In some embodiments, the vertical projection of the reflective layer 224 on the first substrate 100 has a plurality of openings O that overlap the light emitting elements 320 (see Figure 1A The position of the opening O corresponds to the position of the opening H of the first circuit structure 200. In this embodiment, each opening O overlaps with multiple light-emitting elements 320, but the present invention is not limited thereto. In other embodiments, each opening O overlaps with a corresponding light-emitting element 320.

[0065] The second circuit layer 230 is located on the second side 214 of the insulating structure 210. In some embodiments, the second circuit layer 230 includes a connecting electrode 232 and a conductive via 234. The connecting electrode 232 is located on the second side 214 of the insulating structure 210. The conductive via 234 is located in an opening in the insulating structure 210. In some embodiments, the connecting electrode 232 is electrically connected to the first circuit layer 220 through the conductive via 234. In other words, the second circuit layer 230 is electrically connected to the first circuit layer 220. In some embodiments, the second circuit layer 230 has a single-layer or multi-layer structure. In some embodiments, the second circuit layer 230 includes a metal such as chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc, alloys thereof, metal oxides thereof, metal nitrides thereof, combinations thereof, or other conductive materials.

[0066] The second cover layer 430 is located on the first circuit structure 200. In this embodiment, the second cover layer 430 is located on the second circuit layer 230. The second cover layer 430 comprises, for example, an insulating material. In some embodiments, the second cover layer 430 and the first cover layer 420 comprise the same or different materials. In some embodiments, the second cover layer 430 extends from the second surface 214 of the insulating structure 210 along the sidewalls of the opening H of the first circuit structure 200 toward the upper surface of the first substrate 100. In some embodiments, a portion of the second cover layer 430 is located on the second surface 214 of the insulating structure 210, and another portion of the second cover layer 430 is located in the opening H of the first circuit structure 200. In some embodiments, the first cover layer 410 is connected to the second cover layer 430 in the opening H.

[0067] A plurality of first conductive connection structures 510 are located on the first circuit structure 200. In this embodiment, the first conductive connection structures 510 are located in the openings of the second cover layer 430 and are connected to the connection electrodes 232 of the second circuit layer 230. In some embodiments, the first conductive connection structures 510 include solder (e.g., tin, indium, bismuth, or other suitable materials or combinations thereof) or conductive adhesive.

[0068] A plurality of light emitting element packaging structures 300 are located above the first circuit structure 200. Each light emitting element packaging structure 300 includes a second substrate 310 and a plurality of light emitting elements 320. In this embodiment, each light emitting element packaging structure 300 further includes a second circuit structure 330.

[0069] The second substrate 310 is preferably a transparent substrate, and its material includes, but is not limited to, glass, quartz, organic polymer, or other applicable materials. In some embodiments, the second substrate 310 can be an opaque substrate, and its material can be an epoxy resin-glass fiber composite or other special resin (such as bismaleimide-triazine resin) commonly used in printed circuit boards. In this embodiment, the size of the second substrate 310 is smaller than that of the first substrate 100. The first substrate 100 overlaps with the plurality of second substrates 310. The second cover layer 430 is located between the first circuit structure 200 and the second substrate 310.

[0070] The second circuit structure 330 is located on the second substrate 310. In some embodiments, the second circuit structure 330 is a multi-layer structure and includes at least one conductive layer and at least one insulating layer. In some embodiments, the second circuit structure 330 includes a plurality of first pads 332 and a plurality of second pads 334. In some embodiments, the second circuit structure 330 also includes a plurality of conductive lines (not shown) electrically connecting the first pads 332 and / or the second pads 334. In this embodiment, each light-emitting device package structure 300 is electrically connected to the first circuit structure 200 via the first conductive connection structure 510. For example, the first pad 332 is bonded to the second circuit layer 230 of the first circuit structure 200 via the first conductive connection structure 510. In some embodiments, the size of the first pad 332 is larger than that of the second pad 334, thereby improving the yield of the bonding process between the light-emitting device package structure 300 and the first circuit structure 200. In addition, each light-emitting element package structure 300 includes a plurality of light-emitting elements 320 , thereby improving the process yield of transferring the light-emitting elements 320 onto the first substrate 100 .

[0071] The light-emitting element 320 is located between the second substrate 310 and the first substrate 100 and emits light toward the first substrate 100. In this embodiment, the light-emitting element 320 is electrically connected to the second pad 334. For example, the light-emitting element 320 is bonded to the second pad 334 via a second conductive connection structure 520. The second conductive connection structure 520 includes solder (e.g., tin, indium, bismuth, or other suitable materials or combinations thereof) or conductive adhesive.

[0072] In this embodiment, each light-emitting element package structure 300 includes three light-emitting elements 320, and the three light-emitting elements 320 are light-emitting elements of different colors (e.g., a red light-emitting element, a green light-emitting element, and a blue light-emitting element), and each light-emitting element package structure 300 corresponds to a color pixel, but the present invention is not limited to this. In other embodiments, each light-emitting element package structure 300 includes more light-emitting elements, and each light-emitting element package structure 300 corresponds to multiple color pixels. Or in some other embodiments, each light-emitting element package structure 300 includes only a single light-emitting element, and each light-emitting element package structure 300 corresponds to a secondary color pixel. In this embodiment, the light-emitting element 320 is a micro light-emitting diode or other light-emitting element.

[0073] The light-emitting element 320 overlaps the corresponding opening H of the first circuit structure 200. For example, the light-emitting element 320 is located in the opening H. In this embodiment, the multiple light-emitting elements 320 in each light-emitting element package structure 300 overlap a corresponding opening H, but the present invention is not limited to this. In other embodiments, each light-emitting element 320 overlaps a corresponding opening H. In this embodiment, the width W1 of the opening H near the first substrate 100 is greater than the width W2 of the opening H near the second substrate 310.

[0074] By making the width W1 greater than the width W2 , the light emitted by the light emitting element 320 can be better reflected in a direction toward the first substrate 100 , so that the display device 10 has higher brightness.

[0075] In some embodiments, the insulating structure 210 of the first circuit structure 200 protrudes toward the light-emitting element 320 near the sidewall of the opening H, as shown by the protruding portion P of the insulating structure 210. The minimum width W3 of the opening H is located between the first surface 212 and the second surface 214 of the insulating structure 210 and corresponds to the position of the protruding portion P. In this embodiment, the minimum width W3 of the opening H is substantially equal to the width of the opening O.

[0076] Figures 2A to 2J 1 is a cross-sectional view of a method for manufacturing a display device according to an embodiment of the present invention. It must be noted that Figures 2A to 2J The implementation examples follow Figure 1A and Figure 1B The component numbers and partial contents of the embodiments are the same or similar components, and the description of the same technical contents is omitted. For the description of the omitted parts, please refer to the above embodiments and will not be repeated here.

[0077] Please refer to Figure 2A, a light shielding layer 410 is formed on the first substrate 100. For example, a light shielding material is deposited on the first substrate 100, and then the light shielding material is patterned to form the light shielding layer 410. The light shielding layer 410 has a plurality of through holes TH.

[0078] Please refer to Figure 2B , a sacrificial layer SC is formed on the first substrate 100 . In this embodiment, the sacrificial layer SC is formed in the through hole TH of the light shielding layer 410 .

[0079] The material of the sacrificial layer SC includes, for example, photoresist, metal, or other suitable materials. In some embodiments, the thickness T2 of the sacrificial layer SC is 4 microns to 10 microns, but is not limited thereto. In other embodiments, the thickness T2 of the sacrificial layer SC may be less than 4 microns or greater than 10 microns.

[0080] In this embodiment, the angle θ between the side surface of the sacrificial layer SC and the upper surface of the first substrate 100 is preferably 30 degrees to 70 degrees, but not limited thereto.

[0081] Please refer to Figure 2C A first covering material layer 420 ′ is formed on the light shielding layer 410 and the sacrificial layer SC. The first covering material layer 420 ′ covers the top surface of the light shielding layer 410 , the side surfaces of the sacrificial layer SC, and the top surface of the sacrificial layer SC.

[0082] Please refer to Figure 2D , forming a first conductive material 220' on the first covering material layer 420'. In this embodiment, the first conductive material 220' covers the side surfaces and top surface of the sacrificial layer SC. In this embodiment, the first conductive material 220' is a patterned conductive layer. For example, a conductive material is deposited on the first covering material layer 420' and then patterned to form the first conductive material 220'.

[0083] Please refer to Figure 2E , forming an insulating structure 210 on the first conductive material 220' and the first covering material layer 420'. In the present embodiment, the top surface (second surface 214) of the insulating structure 210 is higher than the top surface of the first conductive material 220' above the sacrificial layer SC, and the insulating structure 210 covers a portion of the top surface of the first conductive material 220' above the sacrificial layer SC. In the present embodiment, the opening 216 of the insulating structure 210 above the sacrificial layer SC exposes a portion of the top surface of the first conductive material 220'. In addition, in the present embodiment, the insulating structure 210 further includes a contact hole 218 that does not overlap with the sacrificial layer SC. The contact hole 218 overlaps a portion of the first conductive material 220'.

[0084] Please refer to Figure 2F and Figure 2G, forming a second conductive material 230 ′ on the insulating structure 210 . The second conductive material 230 ′ fills the opening 216 and the contact hole 218 and contacts the first conductive material 220 ′.

[0085] The second conductive material 230' is patterned to form the second circuit layer 230. In this embodiment, while the second conductive material 230' is patterned, a portion of the first conductive material 220' is removed to form the first circuit layer 220. Specifically, a photoresist layer (not shown) is formed on the second conductive material 230', and an etching process is performed using the photoresist layer as a mask to form the first circuit layer 220 and the second circuit layer 230. The etching process removes the first conductive material 220' and the second conductive material 230' above the sacrificial layer SC.

[0086] Please refer to Figure 2H , forming a second covering material layer 430' on the second circuit layer 230. In this embodiment, the second covering material layer 430' is in contact with the first covering material layer 420' on the top surface of the sacrificial layer SC.

[0087] Please refer to Figure 2I , the sacrificial layer SC is removed to form the opening H of the first circuit structure 200. In the present embodiment, the sacrificial layer SC is a photoresist material. A photoresist layer (not shown) is first formed on the second cover material layer 430'. Using the photoresist layer as a mask, an etching process is performed to remove the first cover material layer 420' and the second cover material layer 430' on the top surface of the sacrificial layer SC to form the first cover layer 420 and the second cover layer 430. The photoresist layer and the sacrificial layer SC are then removed together in a photoresist stripping process. In some other embodiments, the sacrificial layer SC is a metal material different from that of the second circuit layer 230. For example, the second circuit layer 230 is a metal material stack of titanium / aluminum / titanium, and the sacrificial layer SC is a metal material of molybdenum. In this embodiment, a wet etching process is performed after the stripping process to remove the sacrificial layer SC. In the present embodiment, before, after, or simultaneously with the removal of the sacrificial layer SC, the second cover material layer 430' is patterned to expose a portion of the second circuit layer 230. In other words, the second cover layer 430 has an opening 432 exposing the connection electrode 232 of the second circuit layer 230 .

[0088] In some embodiments, the method of removing the sacrificial layer SC includes a stripping process, an etching process, or other suitable processes.

[0089] Please refer to Figure 2J, forming a first conductive connection structure 510 on the second circuit layer 230. The first conductive connection structure 510 is, for example, disposed in the opening 432 of the second circuit layer 230. After forming the first conductive connection structure 510, the light emitting element package structure 300 is bonded to the first circuit structure 200, as shown in FIG. Figure 1B shown.

[0090] Figures 3A to 3G 1 is a cross-sectional view of a method for manufacturing a display device according to an embodiment of the present invention. It must be noted that Figures 3A to 3G The implementation examples follow Figure 1A and Figure 1B The component numbers and partial contents of the embodiments are the same or similar components, and the description of the same technical contents is omitted. For the description of the omitted parts, please refer to the above embodiments and will not be repeated here.

[0091] Figure 3A Continued Figure 2D For the process, please refer to Figure 3A After forming the first conductive material 220', an insulating structure 210 is formed on the first conductive material 220' and the first capping material layer 420'. In this embodiment, the top surface (second surface 214) of the insulating structure 210 is lower than the top surface of the first conductive material 220' above the sacrificial layer SC. In this embodiment, the insulating structure 210 exposes a portion of the first conductive material 220' located above the sacrificial layer SC and a portion of the first conductive material 220' located on the side of the sacrificial layer SC.

[0092] Please refer to Figure 3B and Figure 3C , forming a second conductive material 230' on the insulating structure 210. The second conductive material 230' is patterned to form the second circuit layer 230. In the present embodiment, while patterning the second conductive material 230', a portion of the first conductive material 220' is removed to form the first circuit layer 220. Specifically, a photoresist layer (not shown) is formed on the second conductive material 230', and an etching process is performed using the aforementioned photoresist layer as a mask to form the first circuit layer 220 and the second circuit layer 230. The aforementioned etching process removes the first conductive material 220' and the second conductive material 230' above the sacrificial layer SC. In the present embodiment, the aforementioned etching process also removes a portion of the first conductive material 220' that extends beyond the top surface of the insulating structure 210. In other words, in the present embodiment, the reflective layer 224 in the first circuit layer 220 does not cover all side surfaces of the sacrificial layer SC.

[0093] Please refer to Figure 3D, forming a second covering material layer 430' on the second circuit layer 230. In this embodiment, the second covering material layer 430' is in contact with the first covering material layer 420' on the top surface of the sacrificial layer SC.

[0094] Please refer to Figure 3E , for example Figure 2I The disclosed process removes the sacrificial layer SC to form the opening H of the first circuit structure 200 a. In this embodiment, the width of the opening H gradually decreases as it moves away from the first substrate 100 .

[0095] In this embodiment, while removing the sacrificial layer SC, the first covering material layer 420' and the second covering material layer 430' on the top surface of the sacrificial layer SC are also removed to form the first covering layer 420 and the second covering layer 430. In this embodiment, before, after, or while removing the sacrificial layer SC, the second covering material layer 430' is patterned to expose a portion of the second circuit layer 230. In other words, the second covering layer 430 has an opening that exposes the connecting electrode 232 of the second circuit layer 230.

[0096] In some embodiments, the method of removing the sacrificial layer SC includes a stripping process, an etching process, or other suitable processes.

[0097] Please refer to Figure 3F , a first conductive connection structure 510 is formed on the second circuit layer 230 .

[0098] Please refer to Figure 3G , the light emitting element package structure 300a is bonded to the first circuit structure 200a. At this point, the display device 20 is substantially completed.

[0099] In this embodiment, the light emitting element package structure 300a includes a second substrate 310 and a plurality of light emitting elements 320. In this embodiment, each light emitting element package structure 300 further includes a second circuit structure 330a.

[0100] The second circuit structure 330a is located on the second substrate 310. In some embodiments, the second circuit structure 330a is a multi-layer structure, including at least one conductive layer and at least one insulating layer. In some embodiments, the second circuit structure 330a includes a plurality of first pads 332 and a plurality of second pads 334. In some embodiments, the second circuit structure 330 further includes a plurality of conductive lines (not shown) electrically connecting the first pads 332 and / or the second pads 334. In some embodiments, the second circuit structure 330a includes a driving circuit, which is electrically connected to the light-emitting device 320. In this embodiment, each light-emitting device package structure 300a is electrically connected to the first circuit structure 200a via a first conductive connection structure 510. For example, the first pad 332 is bonded to the second circuit layer 230 of the first circuit structure 200a via the first conductive connection structure 510. In some embodiments, the size of the first pad 332 is larger than that of the second pad 334, thereby improving the bonding process yield between the light-emitting device package structure 300a and the first circuit structure 200a. In addition, each light-emitting element package structure 300 a includes a plurality of light-emitting elements 320 , thereby improving the process yield of transferring the light-emitting elements 320 onto the first substrate 100 .

[0101] The light-emitting element 320 is located between the second substrate 310 and the first substrate 100 and emits light toward the first substrate 100. In this embodiment, the second circuit structure 330a has a groove 336, wherein the light-emitting element 320 is located in the groove 336. The provision of the groove 336 can prevent the light-emitting element 320 from directly contacting the upper surface of the first substrate 100 and reduce the thickness T1 required for the insulating structure 210 on the first substrate 100.

[0102] In this embodiment, the light-emitting element 320 is electrically connected to the second pad 334. In some embodiments, the second pad 334 is disposed at the bottom of the groove 336. For example, the light-emitting element 320 is bonded to the second pad 334 via a second conductive connection structure 520. The second conductive connection structure 520 includes solder (e.g., tin, indium, bismuth, or other suitable materials or combinations thereof) or conductive adhesive.

[0103] In this embodiment, each light-emitting element package structure 300a includes three light-emitting elements 320, and the three light-emitting elements 320 are light-emitting elements of different colors (e.g., a red light-emitting element, a green light-emitting element, and a blue light-emitting element), and each light-emitting element package structure 300a corresponds to a color pixel, but the present invention is not limited to this. In other embodiments, each light-emitting element package structure 300a includes more light-emitting elements, and each light-emitting element package structure 300a corresponds to multiple color pixels. Or in some other embodiments, each light-emitting element package structure 300a includes only a single light-emitting element, and each light-emitting element package structure 300a corresponds to a secondary color pixel. In this embodiment, the light-emitting element 320 is a micro-light-emitting diode or other light-emitting element.

[0104] Figures 4A to 4G 1 is a cross-sectional view of a method for manufacturing a display device according to an embodiment of the present invention. It must be noted that Figures 4A to 4G The implementation examples follow Figure 1A and Figure 1B The component numbers and partial contents of the embodiments are the same or similar components, and the description of the same technical contents is omitted. For the description of the omitted parts, please refer to the above embodiments and will not be repeated here.

[0105] Figure 4A Continued Figure 2C For the process, please refer to Figure 4A , forming a first circuit layer 220a on the first covering material layer 420'. In this embodiment, the first circuit layer 220a does not cover the side and top surfaces of the sacrificial layer SC. In this embodiment, the first circuit layer 220a is a patterned conductive layer. For example, a conductive material is deposited on the first covering material layer 420' and then patterned to form the first circuit layer 220a.

[0106] Please refer to Figure 4BAn insulating structure 210a is formed on the first circuit layer 220a and the first covering material layer 420'. The insulating structure 210a may be a single-layer or multi-layer structure. In this embodiment, the top surface (second surface 214) of the insulating structure 210a is higher than the top surface of the sacrificial layer SC. In some other embodiments, the top surface (second surface 214) of the insulating structure 210a may not be higher than the top surface of the sacrificial layer SC. In this embodiment, the insulating structure 210a includes a reflective material. For example, the insulating structure 210a includes an organic material and reflective particles distributed in the organic material. The reflective particles may be, for example, porous (or air-containing) silicon oxide (SiO2), titanium oxide (TiO2), aluminum oxide (Al2O3), calcium carbonate (CaCO3), barium sulfate (BaSO4), zirconium oxide (ZrO2), metal-coated polymer particles, hollow polymer particles, or other reflective microstructures, but the present invention is not limited thereto. In some other embodiments, the insulating structure 210a is a multi-layer structure, wherein the top and / or bottom insulating structures do not contain a reflective material, while the intermediate insulating structures do contain a reflective material. In this embodiment, the insulating structure 210a itself is reflective, and therefore, a reflective layer is not required in the first circuit layer 220a, located above the sacrificial layer SC. In other words, the first circuit layer 220a selectively does not overlap the sacrificial layer SC.

[0107] Please refer to Figure 4C , forming a second circuit layer 230 on the insulating structure 210a.

[0108] Please refer to Figure 4D , forming a second covering material layer 430' on the second circuit layer 230. In this embodiment, the second covering material layer 430' is in contact with the first covering material layer 420' on the top surface of the sacrificial layer SC.

[0109] Please refer to Figure 4E , for example Figure 2I The disclosed process removes the sacrificial layer SC to form the opening H of the first circuit structure 200b. In this embodiment, while removing the sacrificial layer SC, the first cover material layer 420' on the top surface of the sacrificial layer SC and the second cover material layer 430' on the top surface of the sacrificial layer SC are also removed to form the first cover layer 420 and the second cover layer 430. In this embodiment, before, after, or while removing the sacrificial layer SC, the second cover material layer 430' is patterned to expose a portion of the second circuit layer 230. In other words, the second cover layer 430 has an opening 432 that exposes the second circuit layer 230.

[0110] In some embodiments, the method of removing the sacrificial layer SC includes a stripping process, an etching process, or other suitable processes.

[0111] Please refer to Figure 4F , a first conductive connection structure 510 is formed on the second circuit layer 230 .

[0112] Please refer to Figure 4G After forming the first conductive connection structure 510, the light emitting element package structure 300 is bonded to the first circuit structure 200b. At this point, the display device 30 is substantially completed.

[0113] In this embodiment, the insulating structure 210a of the first circuit structure 200b includes a reflective material. Therefore, there is no need to form an additional reflective layer on the side wall of the opening H of the first circuit structure 200b. The insulating structure 210a can be used to reflect the light emitted by the light-emitting element 320 in the direction toward the first substrate 100, thereby improving the brightness of the display device 30.

[0114] Figure 5 is a cross-sectional schematic diagram of a display device according to an embodiment of the present invention. It must be noted that Figures 4A to 4G The implementation examples follow Figure 1A and Figure 1B The component numbers and partial contents of the embodiments are the same or similar components, and the description of the same technical contents is omitted. For the description of the omitted parts, please refer to the above embodiments and will not be repeated here.

[0115] Please refer to Figure 5 In the display device 40, the first circuit structure 200c includes an insulating structure 210b, a first circuit layer 220, a second circuit layer 230 and a third circuit layer 240.

[0116] The insulating structure 210b has a first surface 212 facing the first substrate 100 and a second surface 214 facing away from the first surface 212. The insulating structure 210b comprises a multilayer structure. For example, the insulating structure 210b comprises a first insulating layer 211 and a second insulating layer 213. The second insulating layer 213 overlaps the first insulating layer 211. The first insulating layer 211 and the second insulating layer 213 comprise the same or different materials. In this embodiment, the first surface 212 is located on the first insulating layer 211, and the second surface 214 is located on the second insulating layer 213. In this embodiment, the opening H of the first circuit structure 200c passes through the first insulating layer 211 and the second insulating layer 213.

[0117] The first circuit layer 220 is located on the first surface 212 of the insulating structure 210b. The second circuit layer 230 is located on the second surface 214 of the insulating structure 210b. The third circuit layer 240 is located between the first insulating layer 211 and the second insulating layer 213. In some embodiments, the third circuit layer 240 is electrically connected to the first circuit layer 220 and the second circuit layer 230 via conductive vias, but the present invention is not limited thereto. In this embodiment, the first circuit structure 200c includes a driving circuit, and the driving circuit is electrically connected to the light-emitting element 320.

[0118] Based on the above, the width of the opening of the first circuit structure near the first substrate is greater than the width of the opening near the second substrate, thereby allowing the light emitted by the light-emitting element to be better reflected to the first substrate, so that the display device has higher brightness.

Claims

1. A display device comprising: a first substrate, which is a transparent substrate; a first circuit structure located above the first substrate, and having a plurality of openings exposing the upper surface of the first substrate; A plurality of first conductive connection structures are located on the first circuit structure, and A plurality of light-emitting element packaging structures are located above the first circuit structure, wherein each of the first conductive connection structures is located between the first substrate and the corresponding light-emitting element packaging structure, wherein each of the light-emitting element packaging structures is electrically connected to the first circuit structure through the corresponding first conductive connection structure, and includes a second substrate and at least one light-emitting element. wherein the second substrate is smaller than the first substrate, the at least one light-emitting element is located between the second substrate and the first substrate, and the at least one light-emitting element overlaps the corresponding opening of the first circuit structure and emits light toward the upper surface of the first substrate, wherein the width of the corresponding opening near the first substrate is greater than the width of the corresponding opening near the second substrate; wherein the first substrate overlaps a plurality of the second substrates; Each of the first conductive connection structures overlaps the first substrate and the corresponding second substrate, and is located between the first substrate and the corresponding second substrate.

2. The display device as claimed in claim 1, wherein the widths of the plurality of openings gradually decrease as they move away from the first substrate, and wherein each of the first conductive connection structures comprises tin, indium, bismuth, or a combination thereof, or a conductive paste.

3. The display device according to claim 1 , wherein the first circuit structure comprises: An insulating structure having a first surface facing the first substrate and a second surface facing away from the first surface a first circuit layer located on the first surface of the insulating structure; as well as A second circuit layer is located on the second surface of the insulating structure.

4. The display device as claimed in claim 3, wherein the insulating structure protrudes toward the at least one light-emitting element near the sidewalls of the plurality of openings, and the positions of the minimum widths of the plurality of openings are located between the first surface and the second surface of the insulating structure. The display device as claimed in claim 3 , wherein the insulating structure comprises a reflective material.

6. The display device as claimed in claim 3, wherein the first circuit layer comprises: a plurality of reflective layers, located on sidewalls of the plurality of openings, wherein the insulating structure does not include reflective material; as well as A plurality of signal lines are located on the first surface of the insulation structure. 7 . The display device as claimed in claim 6 , wherein the plurality of reflective layers extend from sidewalls of the plurality of openings to the first surface of the insulating structure. 8 . The display device as claimed in claim 6 , wherein the at least one light-emitting element comprises a plurality of light-emitting elements, and vertical projections of the plurality of reflective layers on the first substrate have a plurality of openings overlapping the plurality of light-emitting elements. 9 . The display device as claimed in claim 3 , wherein the second circuit layer is electrically connected to the first circuit layer.

10. The display device according to claim 3, wherein the insulating structure comprises: a first insulating layer; as well as a second insulating layer overlapping the first insulating layer, wherein the first circuit structure further comprises: A third circuit layer is located between the first insulating layer and the second insulating layer. The display device as claimed in claim 10 , wherein a plurality of the openings penetrate the first insulating layer and the second insulating layer. 12 . The display device as claimed in claim 3 , wherein the thickness of the insulating structure is 4 μm to 10 μm. 13 . The display device as claimed in claim 1 , wherein the first circuit structure comprises a driving circuit, and the driving circuit is electrically connected to the at least one light-emitting element.

14. The display device according to claim 1 , wherein each of the light emitting element package structures further comprises: A second circuit structure is located on the second substrate, and the second circuit structure has a groove, wherein the at least one light-emitting element is located in the groove. 15 . The display device as claimed in claim 14 , wherein the second circuit structure comprises a driving circuit, and the driving circuit is electrically connected to the at least one light-emitting element.

16. The display device according to claim 1 , wherein each of the light emitting element package structures further comprises a second circuit structure, the second circuit structure comprising: at least one first pad electrically connected to the first circuit structure; as well as At least one second pad is electrically connected to the at least one light-emitting element, wherein a size of the at least one first pad is larger than a size of the at least one second pad. The display device as claimed in claim 1 , wherein the at least one light-emitting element is located in the corresponding opening.

18. The display device according to claim 1, further comprising: a light shielding layer located above the first substrate and having a plurality of through holes overlapping the plurality of openings; a first covering layer, located on the light shielding layer, with a portion of the first covering layer located between the first substrate and the first circuit structure; and A second covering layer is located on the first circuit structure and between the first circuit structure and the second substrate. The display device as claimed in claim 18 , wherein the first covering layer is connected to the second covering layer in the plurality of openings.

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