Metal film etching liquid composition
By using an etching solution composition of hydrogen peroxide, tertiary amine compounds, and N-heterocyclic fused ring compounds in a specific ratio, the problems of etching uniformity and pattern control of copper-based metal film etching solutions in TFT-LCD displays were solved, achieving stability and high reliability of low-resistance metal wiring.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ENF TECH CO LTD
- Filing Date
- 2021-11-24
- Publication Date
- 2026-07-03
AI Technical Summary
Existing copper-based metal film etching solutions suffer from problems such as poor etching uniformity, poor pattern straightness, unacceptable taper, increased critical dimension loss, and residue formation when processing increased sheet counts or large areas, making it difficult to meet the high resolution and low resistance metal wiring requirements of TFT-LCD displays.
An etching solution composition containing hydrogen peroxide, tertiary amine compounds, and N-heterocyclic fused ring compounds is used to achieve highly selective etching of copper-based metal films by satisfying specific composition ratios of Formula 1 and Formula 2, thereby suppressing over-etching and damage to the underlying film and maintaining the stability of etching characteristics and control of the cone angle.
It achieves highly selective etching of copper-based metal films, ensuring that the straightness of the pattern and the cone angle meet the requirements, reducing critical size loss, suppressing the generation of residues and precipitates, improving the reliability and electrical characteristics of metal wiring, and is suitable for large-area processing.
Smart Images
Figure CN114540815B_ABST