Dual mode synergistic high aspect ratio glass via metallization integration process

By employing a dual-mode collaborative high aspect ratio glass via metallization integration process, the problems of limited mass transfer and mechanical stress damage in high aspect ratio glass vias are solved, achieving efficient, defect-free metal filling and stable interconnection.

CN122373826APending Publication Date: 2026-07-10SICHUAN MANGE INTELLIGENT INNOVATION TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202610476633.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-04-13
Publication Date
2026-07-10

AI Technical Summary

Technical Problem

In the metallization process of high aspect ratio glass through-holes, traditional processes suffer from problems such as concentration polarization caused by limited mass transfer, blockage of metal deposition paths by bubbles in micropores, and mechanical stress damage and insulating residue caused by the debonding process.

Method used

The high aspect ratio glass via metallization integration process employing dual-mode synergy includes steps such as laser modification, wet etching, stacking and bonding, gas pre-lubrication, and dual-mode synergistic electroplating. The metal filling process is improved through photodecomposition bonding layers and specific power supply configurations.

Benefits of technology

It achieves uniform filling of high aspect ratio glass vias without any residual holes, stabilizes the physical interconnect interface, and improves production efficiency and the reliability of the interconnect structure.

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Abstract

The application relates to the field of semiconductor packaging and discloses a dual-mode cooperative high-aspect-ratio glass via metallization integrated process, which comprises the following steps: preparing a high-aspect-ratio via by laser modification and wet etching on a glass substrate; preparing a metal seed layer on the surface of the substrate, and hot-press bonding two pieces of substrates to form a stacked structure by using a light-decomposing bonding layer; placing the stacked structure in high-pressure carbon dioxide for pre-lubricating treatment, and then simultaneously applying a pulse direct current and a radio frequency power source for dual-mode cooperative electroplating; after surface polishing, irradiating the bonding layer with ultraviolet light to separate the substrates and perform annealing. The application changes the electric field distribution by means of double-glass stacking, replaces air with high-pressure gas to eliminate the gas-liquid interfacial tension of micropores, and breaks the ion mass transfer barrier with the help of a radio frequency field, so that the problems of bubble blockage and concentration difference polarization in the high-aspect-ratio via are solved, efficient and dense filling of metal in the deep hole is realized, and the substrates can be separated without residual glue and damage.
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