High-Sensitivity Positive Photoresist Composition, Its Synthesis Method, and Cured Film

Abstract

The present invention relates to a highly sensitive positive photoresist composition, its synthesis method and cured film, which includes an organic solvent and a solute dissolved in the organic solvent. The weight ratio of the solute is 15-60%. The solute is composed of an acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups, a silicone copolymer, a diazonaphthoquinone compound and a surfactant. The weight ratio of the acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups in the solute is 60-80%. The weight ratio of the diazonaphthoquinone compound to the acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups is (2-20):100. In the present invention, the acrylate copolymer and the silicone copolymer are used as binders together. The acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups can improve the solubility of the polymer in the developer, making it easier for the photoresist to form a pattern during the exposure process, and further enhancing the sensitivity of the photoresist composition.

Description

Technical Field

[0001] The present invention relates to a highly sensitive positive photoresist composition, a synthesis method thereof, and a cured film, belonging to the technical field of liquid crystal displays. Background Art

[0002] An LCD or OLED having characteristics of high precision and resolution can be prepared by a method of increasing the aperture ratio of a display device.

[0003] According to this method, a transparent planarization film is disposed as a protective film on a thin film transistor (TFT) substrate. This method allows data lines and pixel electrodes to overlap, thus increasing the aperture ratio compared to conventional methods. To prepare such a transparent planarization film, several processing steps are employed to impart a specific pattern. Positive photoresist compositions are widely used in this method because they require fewer processing steps.

[0004] Specifically, positive photoresist compositions containing a siloxane polymer are widely utilized due to their high heat resistance, high transparency, and low dielectric constant.

[0005] Positive photoresists undergo a photodecomposition reaction. Compared with negative photoresists, they have the disadvantages of being difficult to ensure sensitivity and adhesion. In positive photoresists, the exposed portions are dissolved by a developer to form a pattern. Therefore, their sensitivity depends on the solubility of the photoresist in the developer.

[0006] Japanese Patent Laid-Open Publication No. 5099140 discloses a siloxane and acrylate resin photoresist composition, which contains a siloxane polymer, an acrylate copolymer, a diazonaphthoquinone compound, and a solvent. Although it has a certain sensitivity, it still cannot be improved to a satisfactory level.

[0007] Therefore, the present invention provides a highly sensitive positive photoresist composition, a synthesis method thereof, and a cured film. Summary of the Invention

[0008] In order to solve the above technical problems, the present invention provides a highly sensitive positive photoresist composition, a synthesis method thereof, and a cured film, which can improve the sensitivity and adhesiveness during the photodecomposition reaction. The specific technical solutions are as follows:

[0009] A highly sensitive positive photoresist composition includes an organic solvent and a solute dissolved in the organic solvent. The weight ratio of the solute is 15 - 60%. The solute is composed of an acrylate copolymer containing side hydroxyl groups and terminal carboxyl groups, a siloxane copolymer, a diazonaphthoquinone compound, and a surfactant. The weight ratio of the acrylate copolymer containing side hydroxyl groups and terminal carboxyl groups in the solute is 60 - 80%. The weight ratio of the diazonaphthoquinone compound to the acrylate copolymer containing side hydroxyl groups and terminal carboxyl groups is (2 - 20) : 100.

[0010] Among them, the polymerization monomers of the acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups include one or more of hydroxyethyl acrylate, hydroxypropyl acrylate, hydroxybutyl acrylate, hydroxyethyl methacrylate, hydroxypropyl methacrylate, and hydroxybutyl methacrylate,

[0011] and one or more of mercaptoacetic acid or mercaptopropionic acid are used as molecular weight regulators during the polymerization process.

[0012] Furthermore, the polymerization monomers of the acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups include one or more of (meth)acrylic acid, 2-phenoxyethyl (meth)acrylate, phenoxy diethylene glycol (meth)acrylate, p-nonylphenoxy polyethylene glycol (meth)acrylate, p-nonylphenoxy polypropylene glycol (meth)acrylate, maleic acid, maleic anhydride, fumaric acid, itaconic acid, tribromophenyl (meth)acrylate, styrene, methylstyrene, dimethylstyrene, and trimethylstyrene.

[0013] Furthermore, the silicone copolymer is a condensate of a silane compound and / or its hydrolysis product, and a bifunctional silane compound is used, including one or more of (3-glycidoxypropyl)methyldimethoxysilane, (3-glycidoxypropyl)methyldiethoxysilane, 3-aminopropyldiethoxymethylsilane, dimethyldiacetoxysilane, dimethyldimethoxysilane, diphenyldimethoxysilane, diphenyldiethoxysilane, diphenyldiphenoxysilane, dimethyldiethoxysilane, 3-chloropropyldimethoxymethylsilane, 3-mercaptopropyldimethoxymethylsilane, and cyclohexyldimethoxymethylsilane.

[0014] Furthermore, the organic solvent is one or more of ethylene glycol alkyl ether acetate, diethylene glycol, propylene glycol monoalkyl ether, propylene glycol alkyl ether acetate, ethyl acetoacetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, dipropylene glycol methyl ether acetate, and propylene glycol butyl ether acetate.

[0015] Further, the diazonaphthoquinone compound includes one or more of an ester of 2,3,4-trihydroxybenzophenone and 1,2-diazidonaphthoquinone-4-sulfonic acid, an ester of 2,3,4-trihydroxybenzophenone and 1,2-diazidonaphthoquinone-5-sulfonic acid, an ester of 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene]bisphenol and 1,2-diazidonaphthoquinone-4-sulfonic acid, and an ester of 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene]bisphenol and 1,2-diazidonaphthoquinone-5-sulfonic acid.

[0016] Further, the surfactant is a nonionic surfactant or a silicone surfactant.

[0017] A method for synthesizing a high-sensitivity positive photoresist composition includes the following steps:

[0018] Step 1: Preparation of an acrylate copolymer: Add a solvent to a reaction vessel equipped with a reflux condenser, continuously stir and raise the temperature to 70 °C, add polymerization monomers in proportion and dissolve and mix them evenly, then add a molecular weight controller, dropwise add a polymerization initiator, fill nitrogen into the reaction vessel and slowly stir the mixture for a polymerization reaction;

[0019] Step 2: Preparation of a silicone copolymer: Add a silane compound and water to a reaction vessel equipped with a reflux condenser, add a solvent and a catalyst accounting for 1% of the total weight of the mixture, reflux and stir for 7 h under the action of the catalyst, and cool and dilute with a solvent;

[0020] Step 3: Preparation of the photoresist composition: Mix the acrylate copolymer, the silicone copolymer, the diazonaphthoquinone compound, and the surfactant evenly, add a solvent to dilute and control the solid content, stir for 2 h, and filter through a membrane filter with a pore size of to obtain a photoresist composition solution.

[0021] Further, the polymerization initiator is one or more of 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2'-azobis(4-methoxy-2,4-dimethylvaleronitrile), benzoyl peroxide, lauroyl peroxide, tert-butyl perpivalate, and 1,1-bis(tert-butylperoxy)cyclohexane.

[0022] A cured film synthesized from a high-sensitivity positive photoresist composition prepared by the above method, the photoresist composition is coated on a substrate, prebaked at a temperature of 60 °C to 130 °C to remove the solvent, a photomask with a desired pattern is used, and based on a wavelength of 365 nm in a band of 200 to 500 nm, at 10 to 200 mJ / cm 2Expose at the exposure rate, and then develop using a developer to form a pattern on the coating. Subject the patterned coating to post-baking at a temperature of 150°C to 300°C for 10 minutes to 5 hours.

[0023] The beneficial effects of the present invention are as follows: The present invention uses an acrylate copolymer and a silicone copolymer as binders together. The acrylate copolymer contains lateral hydroxyl groups and terminal carboxyl groups, which can improve the solubility of the polymer in the developer, making it easier to form a pattern during the exposure process of the photoresist, and further enhancing the sensitivity of the photoresist composition. Specific Embodiments

[0024] The following further clarifies the present invention in conjunction with specific embodiments. It should be understood that these embodiments are only used to illustrate the present invention and not to limit the scope of the present invention. After reading the present invention, various equivalent modifications of the present invention by those skilled in the art fall within the scope defined by the appended claims of this application.

[0025] The high-sensitivity positive photoresist composition of the present invention includes an organic solvent and a solute dissolved in the organic solvent. The weight ratio of the solute is 15 - 60%. The solute is composed of an acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups, a silicone copolymer, a diazonaphthoquinone compound, and a surfactant. The weight ratio of the acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups in the solute is 60 - 80%. The weight ratio of the diazonaphthoquinone compound to the acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups is (2 - 20):100. Within this range, the photoresist is more likely to form a pattern and can suppress surface defects such as rough coating film during its formation.

[0026] Among them, the polymerization monomers of the acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups include at least one of 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, 2-hydroxybutyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, and 2-hydroxybutyl methacrylate.

[0027] And at least one of mercaptoacetic acid or mercaptopropionic acid is used as a molecular weight controller during the polymerization process.

[0028] The polymerization monomers of the acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups include one or more of (meth)acrylic acid, 2-phenoxyethyl (meth)acrylate, phenoxy diethylene glycol (meth)acrylate, p-nonylphenoxy polyethylene glycol (meth)acrylate, p-nonylphenoxy polypropylene glycol (meth)acrylate, maleic acid, maleic anhydride, fumaric acid, itaconic acid, tribromophenyl (meth)acrylate, styrene, methylstyrene, dimethylstyrene, and trimethylstyrene.

[0029] Among them, (meth)acrylic acid is preferred, which can optimize the developability of the photoresist.

[0030] A polymerization initiator is added to the polymerization monomer. The polymerization initiator is one or more of 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2'-azobis(4-methoxy-2,4-dimethylvaleronitrile), benzoyl peroxide, lauroyl peroxide, tert-butyl perpivalate, or 1,1-bis(tert-butylperoxy)cyclohexane.

[0031] The siloxane copolymer is a condensate of a silane compound and / or its hydrolysis product. A bifunctional silane compound is used, including one or more of (3-glycidoxypropyl)methyldimethoxysilane, (3-glycidoxypropyl)methyldiethoxysilane, 3-aminopropyldiethoxymethylsilane, dimethyldiacetoxysilane, dimethyldimethoxysilane, diphenyldimethoxysilane, diphenyldiethoxysilane, diphenyldiphenoxysilane, dimethyldiethoxysilane, 3-chloropropyldimethoxymethylsilane, 3-mercaptopropyldimethoxymethylsilane, and cyclohexyldimethoxymethylsilane.

[0032] The organic solvent is one or more of ethylene glycol alkyl ether acetate, diethylene glycol, propylene glycol monoalkyl ether, propylene glycol alkyl ether acetate, ethyl acetoacetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, dipropylene glycol methyl ether acetate, and propylene glycol butyl ether acetate.

[0033] As a preferred embodiment, the organic solvent is methyl 3-methoxypropionate or propylene glycol monomethyl ether acetate.

[0034] The diazonaphthoquinone compounds include one or more of the esters of 2,3,4-trihydroxybenzophenone and 1,2-diazidonaphthoquinone-4-sulfonic acid, the esters of 2,3,4-trihydroxybenzophenone and 1,2-diazidonaphthoquinone-5-sulfonic acid, the esters of 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene]bisphenol and 1,2-diazidonaphthoquinone-4-sulfonic acid, and the esters of 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene]bisphenol and 1,2-diazidonaphthoquinone-5-sulfonic acid.

[0035] The surfactant is a nonionic surfactant or a silicone surfactant. Adding the surfactant enables the composition to be easily coated and keeps the fluidity at an appropriate level.

[0036] Synthesis Example 1: Acrylate copolymer (A1) containing lateral hydroxyl groups and terminal carboxyl groups

[0037] Charge 200 parts by weight of propylene glycol methyl ether acetate as a solvent into a flask equipped with a condenser and a stirrer, and raise the temperature of the solvent to 70 °C while slowly stirring the solvent. Add 60 parts by weight of styrene, 15 parts by weight of 2-hydroxyethyl acrylate, 5 parts by weight of mercaptoacetic acid, and 15 parts by weight of (meth)acrylic acid to the flask. Dropwise add 5 parts by weight of 2,2'-azobis(2,4-dimethylvaleronitrile) as a radical polymerization initiator over 6 hours to carry out the polymerization reaction. Dilute the resulting product with propylene glycol methyl ether acetate so that the weight content of the solid is 30% to obtain an acrylate copolymer A1 with a weight average molecular weight of 9,000 to 11,000 Da.

[0038] Synthesis Example 2: Acrylate copolymer (A2) containing lateral hydroxyl groups and terminal carboxyl groups

[0039] Carry out the synthesis reaction according to the steps of Synthesis Example 1, except that 62 parts by weight of styrene, 15 parts by weight of 2-hydroxyethyl acrylate, 3 parts by weight of mercaptoacetic acid, and 15 parts by weight of (meth)acrylic acid are added to the flask.

[0040] Synthesis Example 3: Acrylate copolymer (A3) not containing lateral hydroxyl groups and terminal carboxyl groups

[0041] Charge 200 parts by weight of propylene glycol methyl ether acetate as a solvent into a flask equipped with a condenser and a stirrer, and raise the temperature of the solvent to 70 °C while slowly stirring the solvent. Add 60 parts by weight of styrene, 20 parts by weight of methyl methacrylate, and 15 parts by weight of (meth)acrylic acid thereto. Dropwise add 5 parts by weight of 2,2'-azobis(2,4-dimethylvaleronitrile) as a radical polymerization initiator over 6 hours to carry out the polymerization reaction. Dilute the resulting product with propylene glycol methyl ether acetate so that the weight content of the solid is 30% to obtain an acrylate copolymer A3 with a weight average molecular weight of 9,000 to 11,000 Da.

[0042] Synthesis Example 4: Synthesis of a silicone copolymer (B)

[0043] 50 parts by weight of phenyltrimethoxysilane, 25 parts by weight of methyltrimethoxysilane, and 20 parts by weight of pure water were charged into a reactor equipped with a reflux condenser. 5 parts by weight of propylene glycol monomethyl ether acetate was added thereto, and then the mixture was refluxed and stirred for 7 hours in the presence of 0.1 part by weight of trifluoromethanesulfonic acid catalyst based on the total weight of the mixture, and then it was cooled. Thereafter, the resulting product was diluted with propylene glycol methyl ether acetate so that the solid content was 40 parts by weight to obtain a siloxane copolymer (B) having a weight average molecular weight of about 5000 to 8000 Da.

[0044] The resist compositions were prepared using the above synthesis examples, and the components used in the examples and comparative examples are specifically shown in the following table:

[0045] Table 1

[0046]

[0047] Example 1:

[0048] 16 g of the acrylate copolymer (A1) of Synthesis Example 1, 5 g of the siloxane copolymer (B) of Synthesis Example 4, 1 g of a diazonaphthoquinone compound (D), and 0.02 g of a surfactant (E) were uniformly mixed, and the mixture was dissolved in propylene glycol methyl ether acetate so that the solid content of the mixture was 25 parts by weight. The solution was stirred for 2 hours and filtered through a membrane filter with a pore size of 0.1 μm to obtain a composition solution having a solid content of 25 parts by weight. The solid content is the proportion of the solid weight excluding the solvent.

[0049] Examples 2 and Comparative Example 3:

[0050] Differences from Example 1 were the types and / or contents of the corresponding components:

[0051] Table 2

[0052]

[0053] Test 1: Evaluation of sensitivity

[0054] The copolymer compositions prepared in the examples and comparative examples were each spin-coated onto a glass substrate. Then, the coated substrate was pre-baked on a hot plate maintained at 100 °C for 90 seconds to form a dry film. Then, using an aligner (model name: MA6) that emits light with a wavelength of 200 nm to 450 nm, with a wavelength of 365 nm as a reference, at 0 - 200 mJ / cm 2The exposure rate causes it to be exposed for a certain period of time. Using an aqueous solution of 2.5 wt% TMAH as the developer at 23 °C, the dried film was developed for 60 seconds. Thereafter, the exposed film thus obtained was heated in a convection oven at 230 °C for 30 minutes to prepare a cured film with a thickness of 2 μm. For the pattern formed according to the 9-μm mask size in the above procedure, the exposure energy for obtaining a 9-μm critical dimension CD was measured, and the value (mJ / cm 2 ) is smaller, the better the sensitivity: if the obtained value is less than 90, it is marked as high-sensitivity, and if it is greater than 90, it is marked as ordinary.

[0055] Test 2: Evaluate adhesiveness

[0056] The copolymer compositions prepared in the examples and comparative examples were each spin-coated onto a glass substrate. Then, the coated substrate was pre-baked on a hot plate maintained at 100 °C for 90 seconds to form a dried film. A cured film was obtained in the same manner as in Example 1, except that a photomask with each pattern of 6 lines in the range of 1 μm to 30 μm separated by 1-μm intervals was applied. Then, the degree of the smallest remaining line pattern in the 1- to 30-μm line pattern on the silicon nitride substrate was observed using a microscope. During the microscopic observation, the pattern with the lowest CD size remaining after the separation of the line pattern from the mask was evaluated as the development adhesiveness. The smaller the size of the smallest remaining pattern, the better the development adhesiveness.

[0057] The comparative data of sensitivity and adhesiveness as shown in Table 3 were obtained:

[0058] Table 3

[0059] Formulation number <![CDATA[Sensitivity (mJ / cm 2 )]]> Adhesiveness (pattern size μm) Sensitivity (grade determination) Example 1 40 3μm High sensitivity Example 2 70 3μm High sensitivity Comparative Example 1 120 5μm Normal

[0060] It can be seen from the data in the table that the sensitivity and adhesiveness data of the photoresist compositions within the scope of the present invention are generally excellent. Conversely, at least one property is disadvantageous.

[0061] Enlightened by the above ideal embodiments according to the present invention, through the above description, relevant staff can make various changes and modifications completely within the scope not deviating from the technical idea of this invention. The technical scope of this invention is not limited to the content in the specification, and its technical scope must be determined according to the scope of the claims.

Claims

1. A positive photoresist composition, characterized in that: It includes an organic solvent and a solute dissolved in the organic solvent. The weight ratio of the solute is 15 - 60%. The solute is composed of an acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups, a silicone copolymer, a diazonaphthoquinone compound, and a surfactant. The weight ratio of the acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups in the solute is 60 - 80%. The weight ratio of the diazonaphthoquinone compound to the acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups is (2 - 20):

100. Among them, the polymerization monomers of the acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups include one or more of 2 - hydroxyethyl acrylate, 2 - hydroxypropyl acrylate, 2 - hydroxybutyl acrylate, 2 - hydroxyethyl methacrylate, 2 - hydroxypropyl methacrylate, and 2 - hydroxybutyl methacrylate. And one or more of mercaptoacetic acid or mercaptopropionic acid are used as molecular weight regulators during the polymerization process.

2. The positive photoresist composition according to claim 1, characterized in that: The polymerization monomers of the acrylate copolymer containing lateral hydroxyl groups and terminal carboxyl groups also include one or more of (meth)acrylic acid, 2 - phenoxyethyl (meth)acrylate, phenoxy diethylene glycol (meth)acrylate, p - nonylphenoxy polyethylene glycol (meth)acrylate, p - nonylphenoxy polypropylene glycol (meth)acrylate, maleic acid, maleic anhydride, fumaric acid, itaconic acid, tribromophenyl (meth)acrylate, styrene, methylstyrene, dimethylstyrene, and trimethylstyrene.

3. The positive photoresist composition according to claim 1, wherein: The silicone copolymer is a condensate of a silane compound and / or its hydrolysis product. A bifunctional silane compound is used, including one or more of (3 - glycidoxypropyl)methyldimethoxysilane, (3 - glycidoxypropyl)methyldiethoxysilane, 3 - aminopropyldiethoxymethylsilane, dimethyldiacetoxysilane, dimethyldimethoxysilane, diphenyldimethoxysilane, diphenyldiethoxysilane, diphenyldiphenoxysilane, dimethyldiethoxysilane, 3 - chloropropyldimethoxymethylsilane, 3 - mercaptopropyldimethoxymethylsilane, and cyclohexyldimethoxymethylsilane.

4. The positive photoresist composition according to claim 1, characterized in that: The organic solvent is one or more of ethylene glycol alkyl ether acetate, diethylene glycol, ethyl acetoacetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, dipropylene glycol methyl ether acetate, and propylene glycol butyl ether acetate.

5. The positive photoresist composition according to claim 1, characterized in that: The diazonaphthoquinone compounds include one or more of an ester of 2,3,4-trihydroxybenzophenone and 1,2-diazidonaphthoquinone-4-sulfonic acid, an ester of 2,3,4-trihydroxybenzophenone and 1,2-diazidonaphthoquinone-5-sulfonic acid, an ester of 4,4'-[1-[4-[1-(4-hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphenol and 1,2-diazidonaphthoquinone-4-sulfonic acid, and an ester of 4,4'-[1-[4-[1-(4-hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphenol and 1,2-diazidonaphthoquinone-5-sulfonic acid.

6. The positive photoresist composition according to claim 1, characterized in that: The surfactant is a nonionic surfactant.

7. The positive photoresist composition according to claim 1, characterized in that: The surfactant is a silicone surfactant.

8. A method for synthesizing a positive photoresist composition according to claim 1, characterized in that: It includes the following steps: Step 1: Preparation of acrylate copolymer: Add a solvent to a reaction vessel equipped with a reflux condenser, continuously stir and raise the temperature to 70 °C, add polymerization monomers in proportion and dissolve and mix them evenly, then add a molecular weight controller, dropwise add a polymerization initiator, fill nitrogen into the reaction vessel and slowly stir the mixture for a polymerization reaction; Step 2: Preparation of silicone copolymer: Add a silane compound and water to a reaction vessel equipped with a reflux condenser, add a solvent and a catalyst accounting for 1% of the total weight of the mixture, reflux and stir for 7 h under the action of the catalyst, cool and dilute with a solvent; Step 3: Preparation of photoresist composition: Mix the acrylate copolymer, silicone copolymer, diazonaphthoquinone compounds, and surfactant evenly, add a solvent to dilute and control the solid content, stir for 2 h, and filter through a membrane filter with a pore size of to obtain a photoresist composition solution.

9. The synthesis method of the positive photoresist composition according to claim 8, characterized in that: The polymerization initiator is one or more of 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2'-azobis(4-methoxy-2,4-dimethylvaleronitrile), benzoyl peroxide, lauroyl peroxide, tert-butyl perpivalate, and 1,1-bis(tert-butylperoxy)cyclohexane.

10. A cured film, characterized in that: It is prepared using the positive photoresist composition according to any one of claims 1-7.

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