Semiconductor structure and method of forming the same

By employing a multi-stage metal filling process, the challenge of filling conductive materials in high aspect ratio contact openings has been solved, achieving full filling of conductive materials, reducing contact resistance, and improving the performance and reliability of semiconductor devices.

CN114551354BActive Publication Date: 2026-07-24TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Filing Date
2022-01-26
Publication Date
2026-07-24

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Abstract

Semiconductor structures and methods of forming the same are provided. In one embodiment, a semiconductor structure includes an active region located above a substrate, a gate structure disposed above the active region, and a gate contact including a lower portion disposed above the gate structure and an upper portion disposed above the lower portion.
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Citation Information

Patent Citations

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    CN109801873A

  • Contact structure and semiconductor device and method of forming the same

    CN110197848A

  • Methods of forming reduced resistance local interconnect structures and the resulting devices

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  • Shaped gate caps in dielectric-lined openings

    US20200335594A1