Non-crosstalk indium gallium arsenide Geiger mode focal plane detection chip structure and manufacturing method

Abstract

The application discloses a kind of InGaAs Geiger mode focal plane detection chip structure and manufacturing method without crosstalk, and the InGaAs Geiger mode focal plane photosensitive array chip of prepared pn junction is bonded with the supporting sheet with microlens array by gold-gold bonding, the p-type face of InGaAs Geiger mode focal plane chip is common electrode, n-type face electrode is independent and is interconnected by In column flip with readout circuit chip;Chip incident photon enters from the supporting sheet with microlens array, and the incident photon is converged into the p region of each independent photosensitive detection area of InGaAs Geiger mode focal plane by microlens, and the pulse signal generated is processed after being interconnected with n-type face readout circuit, to realize single-photon ranging, laser three-dimensional imaging.The application can realize the production of InGaAs Geiger mode focal plane photosensitive array without crosstalk and can be shared with the same kind of readout circuit of silicon-based Geiger mode focal plane detector.

Description

TECHNICAL FIELD

[0001] The application belongs to the chip structure technical field of photoelectric detectors, and relates to a non-crosstalk indium gallium arsenide Geiger mode focal plane detection chip structure and a manufacturing method. BACKGROUND

[0002] Single photon detectors are devices capable of detecting single photons, and there are many different detectors: photomultiplier tubes (PMT), microchannel plates (MCP), superconducting transition edge sensors (TES), superconducting nanowire single photon detectors (SNSPD), and avalanche photodiodes (APD), etc. In summary, there are three types of materials that can detect single photons, namely vacuum glass multiplier devices, semiconductors, and superconductors. Among various single photon detectors, single photon detectors based on semiconductor APD, i.e. Geiger mode detectors, have become an ideal single photon detection method due to their small size, compactness, low bias, immunity to magnetic fields, ease of integration, low power consumption, and high reliability.

[0003] Single photon detectors have great application prospects in many fields, such as quantum communication and computing, biochemical applications, space laser communication, laser ranging and laser radar, astronomical observation, etc. Geiger mode focal plane detectors have good time resolution, i.e. by measuring the flight time ToF (Time-of-Flight) of reflected photons, the distance of the measured object can be obtained, and they are used in laser ranging and laser radar. Geiger mode focal plane detection chips made of InGaAs / InP (hereinafter referred to as indium gallium arsenide, InGaAs) material can be used for detection of 0.9-1.7 μm wavelength laser signals, and have good response at 1.55-1.57 μm wavelength, and have characteristics such as eye safety and good atmospheric transmission performance, which have received more and more widespread attention in military and civilian optoelectronic applications in recent years.

[0004] Currently, indium gallium arsenide Geiger mode focal plane detection chips have the following two problems, which affect the performance of indium gallium arsenide Geiger mode focal plane detectors. First, the InGaAs epitaxial material prepared by metal organic vapor phase epitaxy equipment (MOCVD) or molecular beam epitaxy equipment (MBE) is usually n-type material, which needs to be prepared by p-type doping to form a pn junction, and the common electrode is an n-type surface electrode, which cannot be shared with a silicon-based Geiger mode focal plane detector with a p-type surface electrode and the same type of readout circuit; second, as the scale of the InGaAs Geiger mode focal plane detector array photosensitive chip expands and the spacing between the photosensitive detection areas (unit APD) narrows, the electrical and optical crosstalk between each photosensitive detection area becomes more serious. SUMMARY

[0005] (I) Invention purposes

[0006] The purpose of the present invention is to provide a crosstalk-free InGaAs Geiger mode focal plane detector chip structure and manufacturing method, so as to realize the manufacture of an InGaAs Geiger mode focal plane detector without crosstalk and capable of sharing a readout circuit with a silicon-based Geiger mode focal plane detector.

[0007] (2) Technical solution

[0008] In order to solve the above technical problems, the present invention provides a crosstalk-free InGaAs Geiger mode focal plane detection chip structure, including an InGaAs Geiger mode focal plane photosensitive array chip with a prepared pn junction permanently bonded to a support sheet with a microlens array through gold-gold bonding, the p-type surface of the InGaAs Geiger mode focal plane chip is a common electrode and is permanently bonded to a support sheet with a microlens through gold-gold bonding, the n-type surface electrode is independent and is interconnected with a readout circuit chip through an indium column flip-chip, and the p-type surface of the chip is the photon incident surface.

[0009] The InGaAs Geiger-mode focal plane photosensitive array chip uses dry etching to completely isolate each detection area on the bulk material, forming independent detection areas. The side walls of the detection areas are effectively protected by processing and passivation.

[0010] The present invention also provides a method for fabricating a crosstalk-free InGaAs Geiger-mode focal plane detection chip. A silicon nitride diffusion mask is formed on an InGaAs epitaxial wafer designed for Geiger-mode operation. Zinc is diffused to form a pn junction, and a p-electrode is prepared. A support wafer is provided with through-holes and through-hole electrodes, electrodes are formed on both sides, and a microlens array is formed on the support wafer. The epitaxial wafer with the pn junction prepared is gold-gold bonded to the support wafer. The bonded epitaxial wafer is then back-thinned and polished, and dry etching is performed to completely isolate each detection area from the bulk material, completing the preparation of the chip's backside antireflection coating and electrodes.

[0011] It specifically includes the following processes:

[0012] First, prepare the InGaAs epitaxial wafer:

[0013] The InGaAs epitaxy used in this embodiment is carried out using metal organic chemical vapor deposition (MOCVD) technology. 18 / cm 3 The epitaxial growth is carried out on a 100° crystal orientation indium phosphide substrate: the thickness is 1 μm, the n-type doping concentration is 3×10 16 / cm 3 Indium phosphide transition layer; thickness 2.5μm, n-type impurity concentration 1-2×10 15 / cm 3 Indium gallium arsenide (InGaAs) 0.53 Ga 0.47As) light absorption layer; thickness is 0.15 μm, n-type doping concentration is 3×10 16 / cm 3 Indium gallium arsenide phosphide (InGaAsP) 0.76 Ga 0.24 As 0.51 P 0.49 ) band transition layer; thickness is 0.2 μm, n-type doping concentration is 1.25×10 17 / cm 3 Indium phosphide charge layer; thickness 3.5μm, n-type doping concentration 7×10 14 / cm 3 The top indium phosphide layer.

[0014] Secondly, the preparation of InGaAs Geiger mode focal plane detection chip:

[0015] First, a plasma chemical vapor deposition technique is used to grow a thickness of 100 nm on the prepared InGaAs epitaxial wafer. Silicon nitride. Using photolithography and etching techniques, 32×32 small circular diffusion windows with a diameter of 25μm are made on the silicon nitride layer. Zinc is diffused by open-tube high-temperature diffusion to form a PN junction with a diameter of 25μm and a depth of 2.5μm in the top layer of indium phosphide, forming small unit APDs. The second time, plasma chemical vapor deposition technology is used to grow the thickness of The silicon nitride antireflection film 8 is then fabricated using photolithography and dry etching techniques to create electrode holes in each photosensitive detection area. The titanium / platinum / gold p-electrode 9 of the detection chip is fabricated using photolithography, electron beam evaporation, 430°C alloying, gold electroplating, and metal etching techniques.

[0016] Micro lenses 18 are prepared on the front of a 200 μm thick double-sided polished high-resistance indium phosphide support sheet 13 using photolithography and etching techniques, and through holes 15 are prepared around the support sheet 13 using laser drilling technology. A thickness of 100 μm is deposited on the front of the support sheet 13 using plasma chemical vapor deposition technology. The support sheet is made of silicon nitride 16 on the front side, and the support sheet 13 is deposited on the back side with a thickness of The back side of the support plate is made of silicon nitride 12. The titanium / platinum / gold support plate back electrode 11, the support plate light hole 19, the support plate front electrode 17, and the support plate through-hole inner electrode 14 are respectively prepared by magnetron sputtering technology, photolithography technology, electroplating technology, and reactive ion etching technology.

[0017] After the InGaAs epitaxial wafer and the InP support wafer 13 are processed, permanent bonding of the p-electrode and the back electrode 11 of the support wafer is achieved by gold-to-gold bonding technology. The bonded InGaAs epitaxial wafer is thinned and polished to a thickness of 25 μm, and n-electrodes 5 are prepared by using photoetching technology, dry etching technology and electron beam evaporation technology. The complete cutting of the photosensitive detection area 7 on the bulk material is achieved by using plasma chemical vapor deposition technology, photoetching technology and dry etching technology, and a passivation film 6 is deposited on the photosensitive detection area 7 by using plasma chemical vapor deposition technology. The passivation film 6 is deposited on the photosensitive detection area 7 by using plasma chemical vapor deposition technology. The silicon nitride on the surface of the n-electrode 5 is etched clean by using photoetching technology and dry etching technology. A shielding layer 4 is coated on the photosensitive detection area which does not meet the requirements of the test performance by using IV test technology and photoetching technology.

[0018] The prepared detection chip is connected to the readout circuit pad 2 of the readout circuit 1 by using the InGaAs flip-chip interconnection technology through the In pillar 3, and the filling and curing of the epoxy glue between the readout circuit 2 and the detection chip are achieved by using the underfill glue technology.

[0019] (Three) beneficial effects

[0020] The InGaAs Geiger mode focal plane array photosensitive chip structure and the manufacturing method provided by the above technical solution have the following beneficial effects:

[0021] (1) The InGaAs Geiger mode focal plane array photosensitive chip is completely isolated on the bulk material by dry etching, and the electrical and optical crosstalk between the photosensitive detection areas can be effectively eliminated by the converging effect of the microlens, while ensuring a high fill factor. The thick bonded gold electrode can block the photon absorption of the pn junction edge of each detection area, and can effectively reduce the afterpulse caused by the photon absorption of the pn junction edge.

[0022] (2) The InGaAs Geiger mode focal plane single array photosensitive chip has a size of 2.5 mm x 2.5 mm and is composed of 32 x 32 photosensitive detection areas, has a high single photon detection efficiency and a low dark count rate, and can be applied to laser ranging and laser radar. The spacing between the photosensitive detection areas of the detection chip is 60 μm, there is an 8 μm cutting groove between the pn junctions of the photosensitive detection areas, the photosensitive detection areas are permanently bonded on the support wafer with a microlens array before cutting, and the electrical and optical crosstalk between the photosensitive detection areas is prevented and a high fill factor is ensured.

[0023] (3) The InGaAs Geiger mode focal plane photosensitive array can be manufactured on a large scale, has low crosstalk, and can share the same readout circuit as the silicon-based Geiger mode focal plane detector. BRIEF DESCRIPTION OF DRAWINGS

[0024] Fig. 1 It is a three-dimensional top view schematic diagram of the crosstalk-free InGaAs Geiger mode focal plane detection chip of the present invention.

[0025] Fig. 2 This is a schematic diagram of the back side of the support plate of the crosstalk-free InGaAs Geiger mode focal plane detection chip of the present invention.

[0026] Fig. 3 This is a front schematic diagram of the support plate of the crosstalk-free InGaAs Geiger mode focal plane detection chip of the present invention.

[0027] Fig. 4 It is a cross-sectional schematic diagram of the crosstalk-free InGaAs Geiger mode focal plane detection chip of the present invention.

[0028] Explanation of the reference numerals: 1 readout circuit; 2 readout circuit pad; 3 indium column; 4 shielding layer; 5n electrode; 6 passivation film of photosensitive detection area; 7 photosensitive detection area; 8 silicon nitride antireflection film; 9p electrode; 10 epoxy resin; 11 electrode on the back side of the support plate; 12 silicon nitride on the back side of the support plate; 13 support plate; 14 electrode inside the through hole of the support plate; 15 through hole; 16 silicon nitride on the front side of the support plate; 17 electrode on the front side of the support plate; 18 microlens; 19 light hole of the support plate. DETAILED DESCRIPTION

[0029] In order to make the purpose, content and advantages of the present invention more clear, the specific implementation methods of the present invention are further described in detail below with reference to the accompanying drawings and examples.

[0030] like Figs. 1 to 4 As shown, the crosstalk-free InGaAs Geiger mode focal plane detection chip structure of the present invention includes: an InGaAs epitaxial wafer with 32×32 photosensitive detection areas 7, the p-electrodes 9 of the 32×32 photosensitive detection areas 7 on the photosensitive array chip are permanently bonded with the back electrode 11 of the support plate 13, and each photosensitive detection area 7 that is completely cut out on the bulk material is covered by a photosensitive detection area passivation film 6. The n-electrode 5 of the photosensitive detection area 7 can be interconnected with the readout circuit pad 2 through the indium column 3 to realize signal processing in the readout circuit 1. The p-electrode 9 of the photosensitive detection area 7 is connected to the back electrode of the support plate and the front electrode 17 of the support plate having an array of microlenses 18 through the electrode 14 in the through hole of the support plate.

[0031] The spacing between adjacent photosensitive detection areas is 60 μm, the diameter of an independent photosensitive detection area is 25 μm, and the depth is 25 μm; the size of the detection chip is 2.5 mm × 2.5 mm.

[0032] InGaAs epitaxial wafers include: n-type doping concentration of 3-8×10 18 / cm 3 The thickness of the indium phosphide substrate formed on the indium phosphide substrate is 1 μm, and the n-type doping concentration is 3×1016 / cm 3 The indium phosphide transition layer is formed on the indium phosphide transition layer with a thickness of 2.5 μm and an n-type impurity concentration of 1-2×10 15 / cm 3 Indium gallium arsenide (InGaAs) 0.53 Ga 0.47 As) light absorption layer, formed on the InGaAs light absorption layer, with a thickness of 0.15 μm and an n-type doping concentration of 3×10 16 / cm 3 Indium gallium arsenide phosphide (InGaAsP) 0.76 Ga 0.24 As 0.51 P 0.49 ) band transition layer, formed on the InGaAsP band transition layer with a thickness of 0.2 μm and an n-type doping concentration of 1.25×10 17 / cm 3 The indium phosphide charge layer has a thickness of 3.5 μm and an n-type impurity concentration of 7×10 14 / cm 3 The top indium phosphide layer.

[0033] The method for manufacturing a crosstalk-free InGaAs Geiger-mode focal plane detection chip of the present invention comprises the following steps:

[0034] First, prepare the InGaAs epitaxial wafer:

[0035] The InGaAs epitaxy used in this embodiment is carried out using metal organic chemical vapor deposition (MOCVD) technology. 18 / cm 3 The epitaxial growth is carried out on a 100° crystal orientation indium phosphide substrate: the thickness is 1 μm, the n-type doping concentration is 3×10 16 / cm 3 Indium phosphide transition layer; thickness 2.5μm, n-type impurity concentration 1-2×10 15 / cm 3 Indium gallium arsenide (InGaAs) 0.53 Ga 0.47 As) light absorption layer; thickness is 0.15 μm, n-type doping concentration is 3×10 16 / cm 3 Indium gallium arsenide phosphide (InGaAsP) 0.76 Ga 0.24 As 0.51 P 0.49 ) band transition layer; thickness is 0.2 μm, n-type doping concentration is 1.25×10 17 / cm 3 Indium phosphide charge layer; thickness 3.5μm, n-type doping concentration 7×10 14 / cm3 a top indium phosphide layer.

[0036] Secondly, the preparation of the InGaAs Geiger-mode focal plane array chip:

[0037] First, on the prepared InGaAs epitaxial wafer, a thickness of 1 μm of silicon nitride is grown by plasma chemical vapor deposition technology. A 32x32 small circular diffusion window with a diameter of 25 μm is made on the silicon nitride layer by using photolithography and etching technology, and zinc diffusion is performed by tube high-temperature diffusion to form a PN junction with a diameter of 25 μm and a depth of 2.5 μm in the top indium phosphide layer, thereby forming a small unit APD. A thickness of 1 μm of silicon nitride anti-reflection film 8 is grown by plasma chemical vapor deposition technology, and an electrode hole of each photosensitive detection area is made by photolithography and dry etching technology.

[0038] A microlens 18 is prepared on the front surface of the 200 μm thick double-side polished high-resistance indium phosphide support wafer 13 by using photolithography and etching technology, and a through hole 15 is prepared around the support wafer 13 by using laser drilling technology. A thickness of 1 μm of silicon nitride 16 is deposited on the front surface of the support wafer 13 by plasma chemical vapor deposition technology, and a thickness of 1 μm of silicon nitride 12 is again deposited on the back surface of the support wafer 13 by plasma chemical vapor deposition technology. A titanium / platinum / gold back surface electrode 11 of the support wafer, a support wafer light transmission hole 19, a support wafer front surface electrode 17, and a support wafer through hole electrode 14 are respectively prepared by using magnetron sputtering technology, photolithography technology, plating technology, and reactive ion etching technology.

[0039] The InGaAs epitaxial wafer and the indium phosphide support wafer 13 after the above process are permanently bonded by using gold-to-gold bonding technology to realize the permanent bonding of the p-electrode and the back surface electrode 11 of the support wafer. The n-electrode 5 is prepared by using photolithography technology, dry etching technology, and electron beam evaporation technology.

[0040] The prepared detection chip is connected with the readout circuit 1 through the indium column 3 by using the indium column flip-chip interconnection technology, and the filling and curing of the epoxy glue between the readout circuit 2 and the detection chip are completed by using the underfill glue technology.

[0041] The working principle of the detector prepared by the InGaAs Geiger mode focal plane detection chip structure and the manufacturing method is as follows: when the photoelectric avalanche diode APD works in a reverse bias condition, photo-generated carriers are avalanche in internal collision ionization, thereby providing a large internal gain, which is called linear working mode. When the voltage continues to increase, the gain continues to increase, and when the voltage increases to a certain extent, that is, exceeds the breakdown voltage of the APD, even a single-photon-excited carrier can also cause a self-sustaining avalanche effect, thereby generating a detectable current signal, which is called Geiger working mode. When applied in laser ranging, laser radar, time correlation counting and the like, photons are randomly arrived and the time of photon arrival cannot be predicted in advance, and the APD of the photosensitive detection area of the device needs to work in a long gate or free running mode. Each APD of the detector is always biased above the breakdown voltage, when the incident photon triggers the avalanche, the circuit quenches the avalanche in time, and then completes the dead time control, recovery and other steps, thereby obtaining the distance, three-dimensional characteristics and other information carried by the single-photon signal.

[0042] The above only describes the preferred embodiments of the present application, and it should be noted that, for those skilled in the art, without departing from the technical principles of the present application, a number of improvements and modifications can be made, and these improvements and modifications should also be considered as the protection scope of the present application.

Claims

1. A crosstalk-free InGaAs Geiger mode focal plane detection chip structure, characterized in that: include: An InGaAs epitaxial wafer and a support plate (13), wherein the InGaAs epitaxial wafer has 32×32 photosensitive detection areas (7), the p-electrodes (9) of the 32×32 photosensitive detection areas (7) are permanently bonded with gold to the back electrode (11) of the support plate (13), and each photosensitive detection area (7) that is completely cut off on the bulk material is covered by a photosensitive detection area passivation film (6); the n-electrode (5) of the photosensitive detection area (7) is interconnected with the readout circuit pad (2) through the indium column (3) to realize signal processing in the readout circuit (1); the p-electrode (9) of the photosensitive detection area (7) is connected to the back electrode (11) of the support plate and the front electrode (17) of the support plate having a microlens (18) array through the electrode (14) in the through hole of the support plate.

2. The crosstalk-free InGaAs Geiger mode focal plane detection chip structure according to claim 1, characterized in that: The spacing between adjacent photosensitive detection areas (7) is 60 μm, and the diameter of an independent photosensitive detection area (7) is 25 μm and the depth is 25 μm.

3. The crosstalk-free InGaAs Geiger mode focal plane detection chip structure according to claim 2, characterized in that: The InGaAs epitaxial wafer comprises an InP substrate and an InP transition layer, an InGaAs light absorption layer, an InGaAsP energy band transition layer, an InGaAs charge layer and a top InP layer sequentially formed thereon.

4. The crosstalk-free InGaAs Geiger mode focal plane detection chip structure according to claim 3, characterized in that: The indium phosphide substrate has an n-type doping concentration of 3×10 18 / cm 3 —8×10 18 / cm 3 100 crystal orientation indium phosphide substrate.

5. The crosstalk-free InGaAs Geiger mode focal plane detection chip structure according to claim 4, characterized in that: The indium phosphide transition layer has a thickness of 1 μm and an n-type doping concentration of 3×10 16 / cm 3 Indium phosphide transition layer.

6. The crosstalk-free InGaAs Geiger mode focal plane detection chip structure according to claim 5, characterized in that: The InGaAs light absorption layer has a thickness of 2.5 μm and an n-type doping concentration of 1×10 15 / cm 3 —2×10 15 / cm 3 In 0.53 Ga 0.47 As light absorbing layer.

7. The crosstalk-free InGaAs Geiger mode focal plane detection chip structure according to claim 6, characterized in that: The InGaAsP energy band transition layer has a thickness of 0.15 μm and an n-type doping concentration of 3×10 16 / cm 3 In 0.76 Ga 0.24 As 0.51 P 0.49 energy band transition layer.

8. The crosstalk-free InGaAs Geiger mode focal plane detection chip structure according to claim 7, characterized in that: The indium phosphide charge layer has a thickness of 0.2 μm and an n-type doping concentration of 1.25×10 17 / cm 3 The top indium phosphide layer is 3.5 μm thick and has an n-type doping concentration of 7×10 14 / cm 3 The top indium phosphide layer.

9. A method for manufacturing a crosstalk-free InGaAs Geiger mode focal plane detection chip, characterized in that: The following processes are included: Step 1: Prepare InGaAs epitaxial wafers Using metal organic chemical vapor deposition technology, the n-type doping concentration is 3×10 18 / cm 3 —8×10 18 / cm 3 The epitaxial growth is carried out on a 100° crystal orientation indium phosphide substrate: the thickness is 1 μm, the n-type doping concentration is 3×10 16 / cm 3 Indium phosphide transition layer; The thickness is 2.5 μm and the n-type doping concentration is 1×10 15 / cm 3 —2×10 15 / cm 3 InGaAs light absorption layer; thickness is 0.15μm, n-type doping concentration is 3×10 16 / cm 3 InGaAsP energy band transition layer; The thickness is 0.2 μm and the n-type doping concentration is 1.25×10 17 / cm 3 Indium phosphide charge layer; thickness 3.5μm, n-type doping concentration 7×10 14 / cm 3 The top indium phosphide layer; Step 2: Prepare InGaAs Geiger mode focal plane detection chip On the top indium phosphide layer of the indium gallium arsenide epitaxial wafer prepared in the first step, a 2000Å thick silicon nitride is grown using plasma chemical vapor deposition technology; 32×32 small circular diffusion windows with a diameter of 25μm are made on the silicon nitride layer using photolithography technology and etching technology, and zinc is diffused by open tube high temperature diffusion to form a PN junction with a diameter of 25μm and a depth of 2.5μm in the top indium phosphide, forming multiple small unit photosensitive detection areas; a second time, a 1500Å thick silicon nitride antireflection film (8) is grown on the diffusion window and the 2000Å silicon nitride using plasma chemical vapor deposition technology, and an electrode hole for each photosensitive detection area is made using photolithography technology and dry etching technology; titanium / platinum / gold p-electrode (9) of the detection chip is prepared on the electrode hole area of ​​the photosensitive detection area using photolithography, electron beam evaporation, 430℃ alloying, gold electroplating, and metal etching technology in sequence; A microlens (18) is prepared on the front side of a 200 μm thick double-sided polished high-resistance indium phosphide support sheet (13) using photolithography and etching techniques, and a through hole (15) is prepared around the support sheet (13) using laser drilling technology; a support sheet front silicon nitride (16) with a thickness of 1500 Å is deposited on the front side of the support sheet (13) using plasma chemical vapor deposition technology, and a support sheet back silicon nitride (12) with a thickness of 4000 Å is deposited on the back side of the support sheet (13) using plasma chemical vapor deposition technology; a titanium / platinum / gold support sheet back electrode (11) is prepared on the back silicon nitride layer (12) using magnetron sputtering technology, a support sheet through hole (19) is prepared on the back electrode (11) using photolithography and metal etching technology, and a support sheet front electrode (17) and a support sheet through hole inner electrode (14) are prepared on the front silicon nitride (16) using electroplating technology; On an InGaAs epitaxial wafer and an InP support sheet (13), a p-electrode (9) and a back electrode (11) of the support sheet are permanently bonded by gold-gold bonding; the back of the bonded InGaAs epitaxial wafer is thinned and polished to a thickness of 25 μm, and an n-electrode (5) is prepared on the InP substrate of the photosensitive detection area (7) by sequentially using photolithography, dry etching, and electron beam evaporation techniques; the photosensitive detection area (7) is completely cut off on the bulk material by plasma chemical vapor deposition, photolithography, and dry etching techniques, and a 2000 Å photosensitive detection area passivation film (6) is deposited on the surface and sidewalls of the photosensitive detection area (7) by plasma chemical vapor deposition; the silicon nitride on the surface of the n-electrode (5) is etched cleanly by photolithography and dry etching techniques; the photosensitive detection area whose test performance does not meet the requirements is covered with a shielding layer (4) by IV testing technology and photolithography technology; The prepared detection chip is interconnected with the n-electrode (5) of the detection chip and the readout circuit pad (2) through the indium column (3) using the indium column flip-chip interconnection technology, and the epoxy glue between the readout circuit (1) and the detection chip is filled and cured using the bottom filling technology.

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