Display device

Abstract

A display device is provided, comprising: a substrate including a display area and a peripheral area; a first insulating layer located on the substrate; a first dam located in the peripheral area and separated from the first insulating layer; an electrode power supply line located on the substrate between the first insulating layer and the first dam; a protective conductive layer located on the first insulating layer, extending above the electrode power supply line, electrically connected to the electrode power supply line, and including an uneven structure on its upper surface; a pixel electrode located on the first insulating layer; a counter electrode located on the pixel electrode and contacting the protective conductive layer by extending to the peripheral area; and an encapsulation layer located on the counter electrode and having a lower surface contacting the upper surface of the protective conductive layer in an area where the protective conductive layer overlaps with the electrode power supply line.

Description

[0001] This application is a divisional application of a patent application with an application date of December 4, 2017, application number 201711260315.X, and invention name “Display Device”. Technical Field

[0002] One or more embodiments relate to a display device that prevents or reduces peeling between components. Background Art

[0003] Generally, various layers are stacked in a display device. For example, in the case of an organic light-emitting display device, each sub-pixel includes an organic emission device including a pixel electrode, an intermediate layer including an emission layer, and a counter electrode. In addition, the organic light-emitting display device also includes an encapsulation layer covering the organic emission device to protect the organic emission device from external moisture, impurities, etc. In addition to the encapsulation layer, the organic light-emitting display device may include various layers. Other display devices such as liquid crystal display devices may also include various layers.

[0004] However, during the manufacture of an existing display device, or during use of the manufactured display device, some layers may be peeled off. Summary of the invention

[0005] One or more embodiments include a display device that prevents or reduces peeling between components. However, one or more embodiments are examples, and the scope of the present disclosure is not limited thereto.

[0006] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments.

[0007] According to one or more embodiments, a display device includes: a substrate including a display area and a peripheral area in an outer area of ​​the display area; a first insulating layer located on the substrate across the display area and the peripheral area; a first dam in the peripheral area and separated from the first insulating layer; an electrode power line located on the substrate and including a portion between the first insulating layer and the first dam; a protective conductive layer located on the first insulating layer, extending above the electrode power line, electrically connected to the electrode power line, and including an uneven structure on its upper surface; a pixel electrode located on the first insulating layer in the display area; a counter electrode located on the pixel electrode and contacting the protective conductive layer by extending to the peripheral area; and an encapsulation layer located on the counter electrode and having a lower surface in contact with the upper surface of the protective conductive layer in the peripheral area in the area where the protective conductive layer overlaps with the electrode power line.

[0008] The electrode power supply line may include a first pattern, and an upper surface of the protective conductive layer may include an uneven structure corresponding to the first pattern.

[0009] In a region where the protective conductive layer overlaps the electrode power supply line, at least one layer below the electrode power supply line may include a second pattern, and an upper surface of the protective conductive layer may include an uneven structure corresponding to the second pattern.

[0010] The display device may further include a thin film transistor electrically connected to the pixel electrode, wherein the interlayer insulating layer on the gate electrode of the thin film transistor extends toward the peripheral region and includes a second pattern in the peripheral region.

[0011] The display device may further include a dummy pattern under the electrode power supply line in a region where the protective conductive layer overlaps the electrode power supply line.

[0012] The display device may further include a thin film transistor electrically connected to the pixel electrode and including a gate electrode, wherein the dummy pattern includes the same material as the gate electrode.

[0013] The display device may further include a cover layer between the counter electrode and the encapsulation layer, extending toward an outer side of the counter electrode, and having an end portion located on the first insulating layer.

[0014] The first insulating layer may define an opening in the peripheral region, and an end of the cover layer may be located between the end of the first insulating layer and the opening.

[0015] The protective conductive layer may fill the opening of the first insulating layer.

[0016] The display device may further include a protection layer between the cover layer and the encapsulation layer.

[0017] The encapsulation layer may include a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer stacked in sequence, and an upper surface of the protective conductive layer may include an uneven structure contacting a lower surface of the first inorganic encapsulation layer.

[0018] The first inorganic encapsulating layer and the second inorganic encapsulating layer may contact each other at the periphery of the first dam.

[0019] The first inorganic encapsulating layer may include an upper surface corresponding to the uneven structure in a region where the protective conductive layer overlaps the electrode power supply line.

[0020] The display device may further include a second dam between the first dam and the first insulating layer, wherein at least a portion of the second dam is located on the protective conductive layer.

[0021] A height of the first dam from the substrate may be greater than a height of the second dam from the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] These and / or other aspects will become apparent and will be more readily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0023] Figure 1 is a schematic plan view of a portion of a display device according to an embodiment;

[0024] Figure 2 is along Figure 1 Schematic cross-sectional views taken along lines II' and II-II';

[0025] Figure 3 is Figure 2 A schematic conceptual diagram showing correlations between components of a display device;

[0026] Figure 4 is shown along Figure 1 A schematic cross-sectional view of an example of a cross section taken along line II-II';

[0027] Figure 5 is shown along Figure 1 A schematic cross-sectional view of another example of a cross section taken along line II-II';

[0028] Figure 6 is shown along Figure 1 A schematic cross-sectional view of another example of a cross section taken along line II-II';

[0029] Figure 7 is shown along Figure 1 A schematic cross-sectional view of another example of a cross section taken along line II-II';

[0030] Figure 8 is shown along Figure 1 A schematic cross-sectional view of another example of a cross section taken along line II-II'. DETAILED DESCRIPTION

[0031] By referring to the following detailed description and the accompanying drawings of the embodiments, the features of the inventive concept and the methods for realizing the inventive concept can be more easily understood. Hereinafter, the embodiments will be described in more detail with reference to the accompanying drawings, in which the same reference numerals always represent the same elements. However, the present invention can be implemented in various different forms and should not be interpreted as being limited to the embodiments shown here. On the contrary, these embodiments are provided as examples so that the disclosure will be thorough and complete, and the many aspects and features of the present invention will be fully conveyed to those skilled in the art. Therefore, the processes, elements and techniques that are not necessary for a person of ordinary skill in the art to fully understand the many aspects and features of the present invention may not be described. Unless otherwise stated, in the entire drawings and written descriptions, the same reference numerals represent the same elements, and therefore, their descriptions will not be repeated. In the drawings, for clarity, the relative sizes of elements, layers and regions may be exaggerated.

[0032] In the following description, for the purpose of illustration, many specific details are set forth to provide a thorough understanding of various embodiments. However, it is apparent that various embodiments may be practiced without these specific details or one or more equivalent arrangements. In other cases, well-known structures and devices are shown in block diagram form to avoid unnecessarily obscuring various embodiments.

[0033] It will be understood that, although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the spirit and scope of the present invention, the first element, component, region, layer or part described below may be referred to as the second element, component, region, layer or part.

[0034] For ease of explanation, spatially relative terms such as "below", "below", "below", "under", "above", and "above" may be used herein to describe the relationship of one element or feature to another element or feature as shown in the drawings. It will be understood that, in addition to the orientation depicted in the drawings, the spatially relative terms are intended to encompass different orientations of the device in use or operation. For example, if the device in the drawings is flipped, an element described as "below" or "below" or "below" other elements or features will subsequently be positioned as "above" the other elements or features. Thus, the example terms "below" and "under" may encompass both "above" and "below". The device may be otherwise positioned (e.g., rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0035] It will be understood that when an element, layer, region, or component is referred to as being “on,” “connected to,” or “coupled to” another element, layer, region, or component, it can be directly on, directly connected to, or directly coupled to the other element, layer, region, or component, or one or more intervening elements, layers, regions, or components may be present. Additionally, it will be understood that when an element or layer is referred to as being “between” two elements or layers, it can be the only element or layer between the two elements or layers, or one or more intervening elements or layers may also be present.

[0036] For the purpose of this disclosure, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" may be interpreted as, for example, only X, only Y, only Z, or any combination of two or more of X, Y, and Z, such as XYZ, XYY, YZ, and ZZ. The same symbols always represent the same elements. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0037] The term used here is only for the purpose of describing specific embodiments, and is not intended to be a limitation of the present invention. As used here, unless the context clearly indicates otherwise, the "one (kind)" in the singular is also intended to include the plural form. It will also be understood that when the terms "include", "comprise" and their variations are used in this specification, the features, integral bodies, steps, operations, elements and / or components stated are explained, but one or more other features, integral bodies, steps, operations, elements, components and / or their groups are not excluded from existence or addition. As used here, the term "and / or" includes any combination and all combinations of one or more related listed items. When the expression such as "at least one (kind) (person) in ... " is located after a row of elements (elements), the whole row of elements (elements) is modified, rather than the individual elements (elements) of the row being modified.

[0038] As used herein, the terms "substantially," "approximately," and similar terms are used as approximate terms rather than terms of degree, and are intended to account for the inherent errors in measurements or calculations that one of ordinary skill in the art will recognize. In addition, the use of "may" when describing embodiments of the present invention refers to "one or more embodiments of the present invention." As used herein, the term "use" and variations thereof may be considered synonymous with the term "utilize" and variations thereof, respectively. In addition, the term "exemplary" is intended to indicate an example or illustration.

[0039] When a certain embodiment can be implemented differently, a specific process order can be performed in a different order than described. For example, two consecutively described processes can be performed substantially simultaneously or in a reverse order to the described order.

[0040] In addition, any numerical range disclosed and / or described herein is intended to include all sub-ranges of the same numerical precision that fall within the described range. For example, the range of "1.0 to 10.0" is intended to include all sub-ranges between the described minimum value 1.0 and the described maximum value 10.0 (and including the minimum and maximum values), that is, having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as 2.4 to 7.6. Any maximum numerical limit described here is intended to include all lower numerical limits contained herein, and any minimum numerical limit described in this specification is intended to include all higher numerical limits contained herein. Therefore, the applicant reserves the right to modify this specification (including claims) to explicitly describe any sub-ranges contained within the range explicitly described here.

[0041] Various embodiments are described herein with reference to cross-sectional views that are schematic diagrams of embodiments and / or intermediate structures. As such, variations in the shapes of the illustrations caused by, for example, manufacturing techniques and / or tolerances will be expected. Therefore, the embodiments disclosed herein should not be understood as being limited to the specific shapes of the regions shown, but will include deviations in shape caused by, for example, manufacturing. For example, an implanted region shown as a rectangle will typically have rounded or curved features and / or a gradient of implant concentration at its edges, rather than a binary change from an implanted region to a non-implanted region. Similarly, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation occurs. Therefore, the regions shown in the accompanying drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of a region of the device and are not intended to be limiting.

[0042] Any suitable hardware, firmware (e.g., application specific integrated circuit), software, or a combination of software, firmware, and hardware may be used to implement the electronic or electrical devices and / or any other related devices or components according to the embodiments of the present invention described herein. For example, the various components of these devices may be formed on an integrated circuit (IC) chip or on a discrete IC chip. In addition, the various components of these devices may be implemented on a flexible printed circuit film, a tape carrier package (TCP), a printed circuit board (PCB), or formed on a substrate. In addition, the various components of these devices may be processes or threads that run on one or more processors in one or more computing devices, execute computer program instructions, and interact with other system components for performing the various functions described herein. Computer program instructions are stored in a memory, which may be implemented in a computer device using a standard memory device (such as a random access memory (RAM) as an example). Computer program instructions may also be stored in other non-temporary computer-readable media, such as a CD-ROM, a flash drive, etc. as an example. In addition, those skilled in the art should recognize that, without departing from the spirit and scope of the exemplary embodiments of the present invention, the functions of various computing devices may be combined or integrated into a single computing device, or the functions of a specific computing device may be distributed on one or more other computing devices.

[0043] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention belongs. It will also be understood that, unless expressly defined as such herein, terms (such as those defined in general dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and / or this specification, and should not be interpreted in an idealized or overly formal sense.

[0044] Figure 1 is a schematic plan view of a portion of a display device 10 according to the embodiment. Figure 2 is along Figure 1 Cross-sectional views taken along line II' and line II-II'. Figure 3 is Figure 2 Schematic conceptual diagram of the correlation between components of the display device 10.

[0045] The display device 10 according to the present embodiment includes various components including a substrate 100. The substrate 100 includes a display area DA and a peripheral area PA in an outer area of ​​the display area DA. The substrate 100 may include various materials, for example, a glass material, a metal material, a plastic material, etc. When the substrate 100 is a flexible substrate, the substrate 100 may include a polymer resin such as polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyacrylate, polyimide (PI), polycarbonate (PC) or cellulose acetate propionate (CAP).

[0046] As an alternative example, the substrate 100 may have a structure including two plastic substrates and an inorganic layer between the two plastic substrates. Both plastic substrates may include the above-mentioned polymer resin and may have the same thickness or different thicknesses. For example, each plastic substrate may include PI and may have a thickness of about 3 μm to about 20 μm. The inorganic layer may be a barrier layer that prevents or reduces the penetration of external impurities and may include, for example, silicon nitride (SiN x ) and / or silicon oxide (SiO x ) of an inorganic material. The inorganic layer may have about However, one or more embodiments are not limited thereto.

[0047] The thin film transistor 210 is located in the display area DA of the substrate 100 , and a display element electrically connected to the thin film transistor 210 may also be in the display area DA. Figure 2 An organic light emitting element 300 as a display element is shown. Hereinafter, for convenience, a case where the display device 10 includes the organic light emitting element 300 as a display element is described. The fact that the organic light emitting element 300 as a display element is electrically connected to the thin film transistor 210 may mean that the pixel electrode 310 of the organic light emitting element 300 is electrically connected to the thin film transistor 210. The thin film transistor may also be in the peripheral area PA of the substrate 100. The thin film transistor in the peripheral area PA may be, for example, a part of a circuit portion for controlling an electrical signal transmitted to the display area DA.

[0048] The thin film transistor 210 includes a semiconductor layer 211, a gate electrode 213, a source electrode 216 and a drain electrode 217. The semiconductor layer 211 includes amorphous silicon, polycrystalline silicon or an organic semiconductor material. x 、SiN x The buffer layer 110 of silicon nitride oxide or the like is formed to planarize the surface of the substrate 100 or to prevent or reduce the penetration of impurities or the like into the semiconductor layer 211. The semiconductor layer 211 may be located on the buffer layer 110.

[0049] The gate electrode 213 may be above the semiconductor layer 211. Considering the adhesion with the adjacent layers, the surface flatness of the stacked layers, the processability, etc., the gate electrode 213 may be a single layer or may be a multilayer, which includes, for example, at least one of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu). In this case, the gate electrode 213 includes SiO x 、SiN x A gate insulating layer 120 of silicon nitride oxide, silicon oxynitride, or the like may be between the semiconductor layer 211 and the gate electrode 213 to insulate the semiconductor layer 211 from the gate electrode 213 .

[0050] The interlayer insulating layer 130 may be located on the gate electrode 213 and may include SiO x 、SiN x , silicon oxynitride, etc.

[0051] The source electrode 216 and the drain electrode 217 may be located on the interlayer insulating layer 130. The source electrode 216 and the drain electrode 217 may be electrically connected to the semiconductor layer 211 through contact holes formed in the interlayer insulating layer 130 and in the gate insulating layer 120.

[0052] Taking into account conductivity, etc., the source electrode 216 and the drain electrode 217 can both be one or more layers including at least one of, for example, Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W and Cu.

[0053] The protective layer covering the thin film transistor 210 can protect the thin film transistor 210, etc. The protective layer may include an inorganic material, such as SiO x 、SiN x , silicon oxynitride, etc. The protective layer may be a single layer or may be a multi-layer.

[0054] The planarization layer 140 may be located on the protective layer. Figure 2As shown, when the organic light-emitting element 300 is above the thin film transistor 210, the planarization layer 140 can substantially planarize the upper surface of the protective layer covering the thin film transistor 210. The planarization layer 140 may include, for example, a general polymer (such as poly (methyl methacrylate) (PMMA) or polystyrene (PS)), a polymer derivative having a phenolic group, an acryl polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a paraxylene polymer, a vinyl alcohol polymer and / or a combination thereof. However, one or more embodiments are not limited thereto. In addition, Figure 2 The planarization layer 140 is shown as a single layer, but may be a multi-layer. According to suitability, the display device 10 according to the present embodiment may include a protective layer and a planarization layer 140, or may include only the planarization layer 140. For convenience, the planarization layer 140 may be referred to as a first insulating layer.

[0055] In the display area DA of the substrate 100 , the organic light emitting element 300 may include a pixel electrode 310 , an opposing electrode 330 , and an intermediate layer 320 between the pixel electrode 310 and the opposing electrode 330 . The intermediate layer 320 may include an emission layer and may be located on the planarization layer 140 .

[0056] An opening is formed in the planarization layer 140 to expose at least one of the source electrode 216 and the drain electrode 217 of the thin film transistor 210, and a pixel electrode 310 that contacts any one of the source electrode 216 and the drain electrode 217 through the opening and is electrically connected to the thin film transistor 210 may be located on the planarization layer 140. The pixel electrode 310 may be a transparent (semi-transparent) electrode or a reflective electrode. When the pixel electrode 310 is a (semi-transparent) transparent electrode, the pixel electrode 310 may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO) or aluminum zinc oxide (AZO). When the pixel electrode 310 is a reflective electrode, the pixel electrode 310 may include, for example, a reflective layer including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr and / or a combination thereof, and may include a reflective layer including ITO, IZO, ZnO, In 2 O 3 , IGO, or AZO. However, one or more embodiments are not limited thereto. The pixel electrode 310 may include various materials and may have various structures, such as a single-layer structure, a multi-layer structure, and the like.

[0057] The pixel defining layer 150 may be located on the planarization layer 140. The pixel defining layer 150 defines a pixel by including an opening corresponding to each sub-pixel (ie, an opening that exposes at least a central portion of the pixel electrode 310). Figure 2 As shown, the pixel defining layer 150 increases the distance between the edge of the pixel electrode 310 and the counter electrode 330 above the pixel electrode 310 to prevent arcing, etc. from being generated at the edge of the pixel electrode 310. The pixel defining layer 150 may include an organic material such as PI or hexamethyldisiloxane (HMDSO). The pixel defining layer 150 may be referred to as a second insulating layer.

[0058] The intermediate layer 320 of the organic light emitting element 300 may include a low molecular weight material or a high molecular weight material. When the intermediate layer 320 includes a low molecular weight material, the intermediate layer 320 may have a single layer structure, or may have a multilayer structure in which a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL) are stacked. The intermediate layer 320 may include various organic materials, for example, copper phthalocyanine (CuPc), N, N'-di (naphthalene-1-yl) -N, N'-diphenyl-benzidine (NPB) and tri-8-hydroxyquinoline aluminum (Alq 3 ). The above-mentioned layers can be formed by vacuum deposition.

[0059] When the intermediate layer 320 includes a high molecular weight material, the intermediate layer 320 may have a structure including an HTL and an EML. In this case, the HTL includes PEDOT, and the EML may include a polymer material such as a polyphenylene vinylene (PPV)-based material and a polyfluorene-based material. The intermediate layer 320 may be formed by screen printing, inkjet printing, laser induced thermal imaging, etc.

[0060] The intermediate layer 320 is not limited to the above description and may have various structures.

[0061] like Figure 2 As shown, the counter electrode 330 may be above the display area DA and may cover the display area DA. That is, the counter electrode 330 of the organic light emitting element 300 is formed integrally and may correspond to the pixel electrode 310. The counter electrode 330 may be a transparent (semi-transparent) electrode or a reflective electrode. When the counter electrode 330 is a transparent (semi-transparent) electrode, the counter electrode 330 may include a layer containing a metal having a small work function (i.e., Li, Ca, lithium fluoride (LiF) / Ca, LiF / Al, Al, Ag, Mg and / or a combination thereof) and a layer containing ITO, IZO, ZnO, In 2 O 3When the counter electrode 330 is a reflective electrode, the counter electrode 330 may include a layer containing Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, and / or a combination thereof. However, the structure and material of the counter electrode 330 are not limited thereto and may vary.

[0062] Since the display element such as the organic light emitting element 300 includes the counter electrode 330, a preset electric signal needs to be transmitted to the counter electrode 330 to display an image. Therefore, the electrode power supply line 410 is in the peripheral area PA, so the preset electric signal is transmitted to the counter electrode 330.

[0063] When various conductive layers are formed in the display area DA, the electrode power supply line 410 may be formed simultaneously with the conductive layers by using the same material as the conductive layers. Figure 2 It is shown that, like the source electrode 216 and the drain electrode 217 of the thin film transistor 210 are located on the interlayer insulating layer 130 in the display area DA, the electrode power supply line 410 is located on the interlayer insulating layer 130 in the peripheral area PA. In this case, when the source electrode 216 and the drain electrode 217 of the thin film transistor 210 are located on the interlayer insulating layer 130 in the display area DA, it can be understood that the electrode power supply line 410 can be formed on the insulating layer 130 in the peripheral area PA during the same process as the source electrode 216 and the drain electrode 217 by using the same material. Therefore, the electrode power supply line 410 has the same structure as the source electrode 216 and the drain electrode 217. However, one or more embodiments are not limited thereto. The electrode power supply line 410 can be formed in various ways, such as, for example, in a manner in which the electrode power supply line 410 is formed on the gate insulating layer 120 during the same process as the gate electrode 213 by using the same material as the gate electrode 213.

[0064] The electrode 330 may directly contact the electrode power line 410, or Figure 2 As shown, the counter electrode 330 may be electrically connected to the electrode power supply line 410 via the protective conductive layer 420. That is, the protective conductive layer 420 located on the planarization layer 140 as the first insulating layer extends toward the electrode power supply line 410, and thus may be electrically connected to the electrode power supply line 410. Therefore, the counter electrode 330 may contact the protective conductive layer 420 in the peripheral area PA, and the protective conductive layer 420 may also contact the electrode power supply line 410 in the peripheral area PA.

[0065] like Figure 2As shown, since the protective conductive layer 420 is located on the planarization layer 140, the protective conductive layer 420 can be formed on the planarization layer 140 in the peripheral area PA by using the same material during the same process as another component. Specifically, the pixel electrode 310 is located on the planarization layer 140 in the display area DA, and the protective conductive layer 420 can be formed on the planarization layer 140 in the peripheral area PA by using the same material during the same process as the pixel electrode 310. Therefore, the protective conductive layer 420 can have the same structure as the pixel electrode 310. Figure 2 As shown, the protective conductive layer 420 is not covered by the planarization layer 140 and may cover the exposed portion of the electrode power supply line 410 .

[0066] like Figure 2 As shown, the planarization layer 140 may have an opening 140b in the peripheral area PA to reduce or prevent external oxygen or moisture from penetrating the display area DA through the planarization layer 140. In addition, when the protective conductive layer 420 is formed, the protective conductive layer 420 may fill the opening 140b. Therefore, impurities that otherwise penetrate the planarization layer 140 in the peripheral area PA may be effectively reduced or prevented from penetrating the planarization layer 140 in the display area DA.

[0067] The opening 140b of the planarization layer 140 may have various shapes. Figure 3 , the planarization layer 140 includes openings 140b separated from each other along the edge of the outer area of ​​the display area DA or along the periphery of the outer area of ​​the display area DA. Alternatively, the planarization layer 140 may have the opening 140b that seamlessly surrounds the display area DA along the edge of the outer area of ​​the display area DA. The planarization layer 140 may have the opening 140b that seamlessly surrounds the display area DA.

[0068] Located on the counter electrode 330 is a cover layer 160 that improves the efficiency of light generated from the organic light emitting element 300. The cover layer 160 covers the counter electrode 330 and extends toward the outside of the counter electrode 330 so that an end 160a of the cover layer 160 is above the planarization layer 140 as a first insulating layer. Specifically, the end 160a of the cover layer 160 is located above the planarization layer 140 at a region between the opening 140b of the planarization layer 140 and the end 140a of the planarization layer 140. That is, the cover layer 160 may contact the protective conductive layer 420 near the outside of the counter electrode 330 under the counter electrode 330. Because the counter electrode 330 covers the display area DA and extends toward the outer area of ​​the display area DA, the cover layer 160 also covers the display area DA and extends toward the peripheral area PA in the outer area of ​​the display area DA. The cover layer 160 may include an organic material.

[0069] The encapsulation layer 500 is located on the cover layer 160. The encapsulation layer 500 protects the organic light emitting element 300 from external moisture, oxygen, etc. The encapsulation layer 500 extends toward the display area DA where the organic light emitting element 300 exists, and also extends toward the peripheral area PA in the outer area of ​​the display area DA. Figure 2 As shown, the encapsulation layer 500 may have a multi-layer structure. In detail, the encapsulation layer 500 may include a first inorganic encapsulation layer 510 , an organic encapsulation layer 520 , and a second inorganic encapsulation layer 530 .

[0070] The first inorganic encapsulating layer 510 may cover the capping layer 160 and may include SiO x 、SiN x The first inorganic encapsulating layer 510 may be formed along a lower structure of the first inorganic encapsulating layer 510 .

[0071] The organic encapsulation layer 520 has a thickness sufficient to cover the first inorganic encapsulation layer 510 (e.g., planarize the first inorganic encapsulation layer 510), so the upper surface of the organic encapsulation layer 520 can be substantially flat over the entire display area DA. The organic encapsulation layer 520 may include at least one selected from the group consisting of PET, PEN, PC, PI, polyvinyl sulfonate, polyoxymethylene, PAR, and hexamethyldisiloxane.

[0072] The second inorganic encapsulating layer 530 may cover the organic encapsulating layer 520 and may include SiO x 、SiN x The first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530 may have or may cover a larger area than the organic encapsulation layer 520. The first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530 may respectively contact the outer side of the organic encapsulation layer 520. That is, due to the first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530, the organic encapsulation layer 520 may be protected from being exposed to the outside.

[0073] The encapsulation layer 500 includes a first inorganic encapsulation layer 510, an organic encapsulation layer 520, and a second inorganic encapsulation layer 530, and therefore, even if the encapsulation layer 500 is broken, due to the multi-layer structure of the encapsulation layer 500, the crack does not propagate between the first inorganic encapsulation layer 510 and the organic encapsulation layer 520 or between the organic encapsulation layer 520 and the second inorganic encapsulation layer 530. Therefore, the generation of a path through which external oxygen, moisture, etc. can penetrate the display area DA can be prevented or reduced.

[0074] While the encapsulation layer 500 is formed, the structure under the encapsulation layer 500 may be damaged. For example, the first inorganic encapsulation layer 510 may be formed by chemical vapor deposition (CVD), and when the first inorganic encapsulation layer 510 is formed by CVD, the layer directly below the first inorganic encapsulation layer 510 may be damaged. Therefore, when the first inorganic encapsulation layer 510 is directly formed on the cover layer 160, the cover layer 160 that improves the efficiency of the light generated from the organic light emitting element 300 may be damaged, so that the light efficiency of the display device 10 may be reduced. Therefore, in order to reduce or prevent damage to the cover layer 160 that is additionally caused when the encapsulation layer 500 is formed, the protective layer 170 may be located between the cover layer 160 and the encapsulation layer 500. The protective layer 170 may include LiF.

[0075] As described above, the cover layer 160 extends from the display area DA and the peripheral area PA in the outer area of ​​the display area DA. In order to reduce or prevent damage to the cover layer 160 at least in the display area DA, the protective layer 170 also extends from the display area DA and the peripheral area PA. In this case, although the cover layer 160 may be partially damaged in the peripheral area PA in the outer area of ​​the display area DA, there is no display element in the peripheral area PA, so the quality of the image recognized by the user is not reduced. Therefore, as shown in FIG. Figure 2 and Figure 3 As shown, the protective layer 170 extends at least toward the outer area of ​​the display area DA, but the end 170a of the protective layer 170 may be closer to the display area DA than the end 160a of the cover layer 160. However, one or more embodiments are not limited thereto. The protective layer 170 may completely cover the cover layer 160, so the end 170a of the protective layer 170 may extend in the outer area (e.g., the peripheral area PA) farther than the end 160a of the cover layer 160.

[0076] When forming the encapsulation layer 500, more specifically, when forming the organic encapsulation layer 520, the materials included in the organic encapsulation layer 520 are confinedly placed in a preset area. Figure 2 As shown, the first dam 610 may be located in the peripheral area PA. Figure 2 As shown, the buffer layer 110, the gate insulating layer 120, the interlayer insulating layer 130 and the planarization layer 140 as a first insulating layer may exist in both the display area DA and the peripheral area PA of the substrate 100. The first dam 610 is in the peripheral area PA to be separated from the planarization layer 140.

[0077] The first dam 610 may have a multi-layer structure. For example, the first dam 610 may include a first layer 611, a second layer 613, and a third layer 615 in a direction extending away from the substrate 100. The first layer 611 may be formed by using the same material during the same process as the planarization layer 140 as the first insulating layer in the display area DA. The second layer 613 may be formed by using the same material during the same process as the pixel defining layer 150 as the second insulating layer in the display area DA. The third layer 615 may be additionally formed on the second layer 613 by using the same material as the second layer 613.

[0078] During the manufacture of the display device, the first dam 610 may support a mask, and may prevent contact of a component preformed with the mask, thereby preventing damage, which is used when forming the intermediate layer 320 or the counter electrode 330 of the organic light emitting element 300 or when forming the capping layer 160 or the protective layer 170 after the formation of the intermediate layer 320 or the counter electrode 330. In addition, when the organic encapsulation layer 520 is located on the first inorganic encapsulation layer 510, the first dam 610 may prevent the material included in the organic encapsulation layer 520 from moving toward the edge of the substrate 100. In addition, due to separation from the planarization layer 140, the first dam 610 may reduce or prevent external moisture from penetrating the display area DA along the planarization layer 140 including the organic material.

[0079] like Figure 2 As shown, the first inorganic encapsulating layer 510 of the encapsulating layer 500 covers the first dam 610, extends toward the outside of the first dam 610, and may contact the interlayer insulating layer 130 on the outside of the first dam 610. Since the first inorganic encapsulating layer 510 and the interlayer insulating layer 130 include an inorganic material, the first inorganic encapsulating layer 510 and the interlayer insulating layer 130 may have excellent adhesion.

[0080] In addition, the lowermost surface of the encapsulation layer 500 contacts the protective conductive layer 420 between the end portion 160a of the capping layer 160 and the first dam 610. That is, since the first inorganic encapsulation layer 510, which is the lowermost layer of the encapsulation layer 500, contacts the protective conductive layer 420 including the same material as the pixel electrode 310, the adhesion between the encapsulation layer 500 and the layers below the encapsulation layer 500 can be maintained excellent.

[0081] If the end 160a of the cover layer 160 including the organic material extends from the end 140a of the planarization layer 140 toward the first dam 610, the encapsulation layer 500 contacts the layer including the organic material in the inner region of the first dam 610. As a result, the adhesion between the encapsulation layer 500 and the layer below it may be reduced. However, in the case of the display device 10 according to the present embodiment, the adhesion between the encapsulation layer 500 and the layer below it is maintained extremely good between the end 140a of the planarization layer 140 and the first dam 610, and is maintained extremely good on the outside of the first dam 610. Therefore, during the manufacture of the display device 10 or during the use of the display device 10 after manufacture, the peeling of the encapsulation layer 500 from the lower layer can be effectively prevented or reduced.

[0082] In addition, the protective conductive layer 420 may include an uneven structure / uneven surface 422 at at least a portion of its upper surface. In detail, the protective conductive layer 420 may include an uneven structure 422, which is located in the region of the direct contact encapsulation layer 500 between the first dam 610 and the end 140a of the planarization layer 140, that is, in the region where the electrode power supply line 410 overlaps with the protective conductive layer 420. The uneven structure 422 makes the upper surface of the protective conductive layer 420 uneven, and therefore, the area of ​​the upper surface of the protective conductive layer 420 can be increased. Therefore, the pixel electrode 310 and the protective conductive layer 420 including the same material can have different surface roughness. In detail, the surface roughness of the upper surface of the pixel electrode 310 can be less than the surface roughness of the upper surface of the protective conductive layer 420. Therefore, the area of ​​the region where the encapsulation layer 500 is attached to the lower layer increases, and therefore, the adhesion between the encapsulation layer 500 and the lower layer can be increased.

[0083] The uneven structure 422 may have various shapes or patterns. For example, the uneven structure 422 may be directly located on the upper surface of the protective conductive layer 420. However, one or more embodiments are not limited thereto, and the uneven structure 422 may be located on the upper surface of the protective conductive layer 420 in various ways. Figures 4 to 7 Describe it.

[0084] In other embodiments, the first inorganic encapsulation layer 510 may have an upper surface corresponding to the uneven structure 422 included in the upper surface of the protective conductive layer 420 (for example, at least between the first dam 610 and the end 140a of the planarization layer 140). Therefore, the area of ​​the region where the first inorganic encapsulation layer 510 is attached to the second inorganic encapsulation layer 530 increases, and thus the adhesion between the first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530 can be increased.

[0085] Figure 4 is shown along Figure 1A sectional view of an example of a cross section taken along line II-II'.

[0086] Due to the shape of the electrode power line 410, Figure 4 The display device 10B is different from Figures 1 to 3 The display device 10 shown. Figure 4 , the electrode power line 410 of the display device 10B may include a first pattern 412. The first pattern 412 does not correspond to the flat upper surface of the electrode power line 410, and the protective conductive layer 420 located on the electrode power line 410 has an upper surface corresponding to the first pattern 412 of the upper surface of the electrode power line 410 in the area where the electrode power line 410 overlaps the protective conductive layer 420. Therefore, the upper surface of the protective conductive layer 420 may have an uneven structure 422. Therefore, the area of ​​the region where the first inorganic encapsulation layer 510 is attached to the second inorganic encapsulation layer 530 increases, and the adhesion between the protective conductive layer 420 and the first inorganic encapsulation layer 510 contacting the protective conductive layer 420 may increase.

[0087] For example, the first pattern 412 may have an uneven structure directly on the upper surface of the electrode power supply line 410. As another example, the first pattern 412 may include a hole passing through the electrode power supply line 410. In this case, the hole may have various shapes such as a circle and a polygon, and may be arranged regularly or irregularly.

[0088] Furthermore, in other embodiments, the first inorganic encapsulating layer 510 may have an upper surface corresponding to the uneven structure 422 included in the upper surface of the protective conductive layer 420. Therefore, adhesion between the first inorganic encapsulating layer 510 and the second inorganic encapsulating layer 530 may be increased.

[0089] Figure 5 is shown along Figure 1 A sectional view of another example of a cross section taken along line II-II'.

[0090] Reference Figure 5 In the display device 10C, in the region where the electrode power supply line 410 overlaps the protective conductive layer 420, at least one of the layers below the electrode power supply line 410 includes the second pattern 132, and thus the upper surface of the protective conductive layer 420 may have an uneven structure 422. For example, the second pattern 132 may include the same material as the interlayer insulating layer 130, or may be formed in the interlayer insulating layer 130, and thus may be formed during the same process as the interlayer insulating layer 130.

[0091] When the interlayer insulating layer 130 has the second pattern 132 in the region where the electrode power supply line 410 overlaps with the protective conductive layer 420, the electrode power supply line 410 is stacked on the interlayer insulating layer 130 in the region corresponding to the second pattern 132, and thus the upper surface of the electrode power supply line 410 may have the first pattern 412 corresponding to the second pattern 132. As a result, the protective conductive layer 420 on the electrode power supply line 410 has an upper surface corresponding to the first pattern 412 of the electrode power supply line 410, and the upper surface of the protective conductive layer 420 has an uneven structure 422, so that the area of ​​the region where the protective conductive layer 420 is attached to the first inorganic encapsulation layer 510 increases, and so that the adhesion between the protective conductive layer 420 and the first inorganic encapsulation layer 510 can be increased.

[0092] However, one or more embodiments are not limited thereto. The second pattern 132 may include a gate insulating layer (eg, Figure 2 In addition, as shown in the drawings, the first inorganic encapsulation layer 510 may have an upper surface corresponding to the uneven structure 422 included in the upper surface of the protective conductive layer 420, and the adhesion between the first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530 may be increased.

[0093] Figure 6 is shown along Figure 1 A sectional view of another example of a cross section taken along line II-II'.

[0094] Reference Figure 6 In the display device 10D, the display device 10D may include a dummy pattern 215 under the electrode power supply line 410 in a region where the electrode power supply line 410 overlaps the protective conductive layer 420. For example, the dummy pattern 215 may be located on the gate insulating layer 120. In this case, when the thin film transistor (e.g., Figure 2 The gate electrode (eg, Figure 2 The gate electrode 213 is located in the display area (eg, Figure 1 When the dummy pattern 215 is formed on the gate insulating layer 120 in the display area DA, it can be understood that the dummy pattern 215 can be formed on the gate insulating layer 120 during the same process as the gate insulating layer 120, and can be formed in the peripheral area (eg, Figure 1 The same material is included in the peripheral area PA).

[0095] The dummy pattern 215 may have various shapes. For example, the dummy pattern 215 may be patterns that are electrically insulated from each other and may be arranged regularly or irregularly. In this case, the dummy pattern 215 may have a shape such as a circular pattern or a polygonal shape.

[0096] When the dummy pattern 215 is located on the gate insulating layer 120 in this region, the interlayer insulating layer 130, the electrode power supply line 410, and the protective conductive layer 420 sequentially stacked on the gate insulating layer 120 may have a shape corresponding to the dummy pattern 215. Therefore, the upper surface of the protective conductive layer 420 may have an uneven structure 422 corresponding to the dummy pattern 215, and thus, the adhesion between the protective conductive layer 420 and the first inorganic encapsulation layer 510 may be increased. In the region where the electrode power supply line 410 overlaps the protective conductive layer 420, the first inorganic encapsulation layer 510 may have an upper surface corresponding to the uneven structure 422 included in the upper surface of the protective conductive layer 420, and thus, the adhesion between the first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530 may be increased.

[0097] Figure 7 is shown along Figure 1 A sectional view of another example of a cross section taken along line II-II'.

[0098] Reference Figure 7 The display device 10E may include a first dummy pattern 215a and a second dummy pattern 215b under the electrode power supply line 410 in a region where the electrode power supply line 410 overlaps the protective conductive layer 420. For example, the thin film transistor (e.g., Figure 2 The storage capacitor of the thin film transistor 210 may include a first electrode and a second electrode. The first dummy pattern 215a may be located on the same layer as the first electrode of the storage capacitor, and the second dummy pattern 215b may be located on the same layer as the second electrode of the storage capacitor.

[0099] In more detail, the first dummy pattern 215a may be located on the gate insulating layer 120, and the second dummy pattern 215b may be located on the first interlayer insulating layer 130a between the first electrode and the second electrode of the storage capacitor. In addition, the second dummy pattern 215b may also be covered by the second interlayer insulating layer 130b located on the second electrode of the storage capacitor. The first dummy pattern 215a and the second dummy pattern 215b do not overlap each other and may not be vertically aligned. That is, the first dummy pattern 215a and the second dummy pattern 215b may be alternately arranged along a direction toward the periphery of the display device 10E.

[0100] When the first dummy pattern 215a and the second dummy pattern 215b are alternately arranged in the above-mentioned region, the first interlayer insulating layer 130a, the second interlayer insulating layer 130b, the electrode power supply line 410 and the protective conductive layer 420 sequentially stacked on the gate insulating layer 120 may have a shape corresponding to the first dummy pattern 215a and the second dummy pattern 215b. Therefore, the upper surface of the protective conductive layer 420 may have an uneven structure 422, and thus, the adhesion between the protective conductive layer 420 and the first inorganic encapsulation layer 510 may be increased. In other embodiments, the first inorganic encapsulation layer 510 may have an upper surface corresponding to the uneven structure 422 included in the upper surface of the protective conductive layer 420 in the above-mentioned region, and thus, the adhesion between the first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530 may be increased.

[0101] Figure 8 is shown along Figure 1 A sectional view of another example of a cross section taken along line II-II'.

[0102] Since the display device 10F further includes the second dam 620, Figure 8 The display device 10F and Figures 1 to 3 The second dam 620 may be separated from the planarization layer 140 and may be located inside the first dam 610. That is, the second dam 620 may be above a portion of the electrode power supply line 410 corresponding to the protective conductive layer 420.

[0103] As described above, the first dam 610 may have a structure in which the first layer 611, the second layer 613, and the third layer 615 are stacked. In this case, the second dam 620 may include a lower layer 623 and an upper layer 625. The lower layer 623 may be formed by using the same material during the same process as the second layer 613 of the first dam 610, and the upper layer 625 may be formed on the lower layer 623 by using the same material during the same process as the third layer 615 of the first dam 610. Therefore, the second dam 620 may have a lower height than the first dam 610, and the heights of the first dam 610 and the second dam 620 are the heights of the first dam 610 and the second dam 620 from the substrate (e.g., Figure 1 The height of the base 100).

[0104] The second dam 620 may prevent the organic encapsulation layer (eg, Figure 2 The material included in the organic encapsulating layer 520 overflows toward the outside of the second dam 620. Although the material included in the organic encapsulating layer partially overflows toward the outside of the second dam 620, since the position of the second dam 620 is fixed by the first dam 610, the material may not move further toward the edge of the substrate 100.

[0105] The first inorganic encapsulating layer 510 and the second inorganic encapsulating layer 530 may cover the first dam 610 and thus may contact each other on the outer side of the first dam 610. In addition, the first inorganic encapsulating layer 510 contacts the interlayer insulating layer 130 including an inorganic material on the outer side of the first dam 610 and thus may effectively prevent penetration of external moisture or the like.

[0106] In addition, in the region where the electrode power supply line 410 overlaps the protective conductive layer 420, the protective conductive layer 420 may have an uneven structure, and thus the adhesion between the protective conductive layer 420 and the first inorganic encapsulation layer 510 may be increased. In addition, since the second dam 620 is located on the uneven structure, damage such as misalignment of the second dam 620 may be prevented during manufacture of the display device.

[0107] According to one or more embodiments, a display device that can prevent or reduce peeling between components can be implemented. However, the scope of the present disclosure is not limited thereto.

[0108] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. The description of features or aspects in each embodiment should generally be considered as available for other similar features or aspects in other embodiments.

[0109] While one or more embodiments have been described with reference to the drawings, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope as defined by the claims and their functional equivalents.

Claims

1. A display device, comprising: a substrate including a display area and a peripheral area in an outer area of ​​the display area; a first insulating layer, on the substrate, spanning the display area and the peripheral area; a pixel electrode, located on the first insulating layer in the display area; a counter electrode, located on the pixel electrode; as well as an electrode power supply line located in the peripheral region and electrically connected to the counter electrode, wherein, in the region where the substrate overlaps the electrode power line, at least one layer below the electrode power line comprises a repeating pattern, and Wherein, the electrode power supply line includes an uneven structure including a plurality of protrusions and a plurality of recesses corresponding to the repeated pattern.

2. The display device according to claim 1, further comprising a thin film transistor electrically connected to the pixel electrode, in, The interlayer insulating layer on the gate electrode of the thin film transistor extends toward the peripheral region and includes the repeated pattern in the peripheral region.

3. The display device according to claim 2, wherein: The thin film transistor includes a source electrode and a drain electrode on the interlayer insulating layer, and The electrode power supply line includes the same material as that of the source electrode and the drain electrode. 4 . The display device of claim 1 , further comprising a protective conductive layer which is located on the first insulating layer and electrically connects the electrode power supply line to the counter electrode. 5 . The display device of claim 1 , further comprising an intermediate layer including an emission layer between the pixel electrode and the counter electrode. 6 . The display device of claim 1 , further comprising a dummy pattern for forming the repeating pattern below the electrode power supply line in a region where the substrate overlaps the electrode power supply line.

7. The display device according to claim 6, further comprising a thin film transistor, the thin film transistor being electrically connected to the pixel electrode and comprising a gate electrode, in, The dummy pattern includes a same material as that of the gate electrode.

8. The display device according to claim 6, further comprising: a thin film transistor electrically connected to the pixel electrode and including a gate electrode; and A storage capacitor is electrically connected to the thin film transistor and includes a first electrode and a second electrode, the first electrode is located on the gate insulating layer covering the gate electrode of the thin film transistor, and the second electrode is located on the interlayer insulating layer covering the source electrode and the drain electrode of the thin film transistor.

9. The display device according to claim 8, wherein: The dummy patterns include a first dummy pattern located on the same layer as the first electrode and a second dummy pattern located on the same layer as the second electrode.

10. The display device according to claim 9, wherein: The first dummy patterns and the second dummy patterns are arranged alternately.

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