A high power density DAB integrated module based on SiC devices

Abstract

The present invention provides a high-power density DAB integrated module based on SiC devices, which can increase the operating frequency of the device, reduce the volume of magnetic components and the overall device, and has a wide range of applications. The module includes a DAB main circuit board, a SiC device, a heat sink, an inductor, a transformer, and a half-bridge driver. The DAB main circuit board integrates an input detection circuit, an output detection circuit, a control circuit interface, and a drive circuit interface. The DAB main circuit board has an inductor area and a transformer area, respectively for accommodating the inductor and the transformer. An input DC filter capacitor is fixed to the input connection end of the DAB main circuit board, and an output DC filter capacitor is fixed to the output connection end of the DAB main circuit board. The SiC device is clamped and connected to the heat sink, which is fixedly arranged on one side of the DAB main circuit board. The half-bridge driver and the heat sink are symmetrically arranged on the other side of the DAB main circuit board relative to the DAB main circuit board.

Description

Technical Field

[0001] The present invention relates to the technical field of transformer, rectifier and inductor manufacturing, and in particular to a high-power-density DAB integrated module based on SiC devices. Background Art

[0002] In recent years, third-generation power semiconductor devices (i.e., wide-bandgap power semiconductor devices), represented by silicon carbide (SiC), have experienced rapid development. Their fast switching speeds, low losses, and high operating temperatures far surpass those of existing silicon power semiconductor devices, making them a crucial cornerstone for building future green energy. As third-generation power semiconductor technology matures, it will gradually replace existing silicon power devices in key areas such as new energy vehicles, rail transit, smart grids, and next-generation mobile communications, driving the further development of power electronics. Currently, while wide-bandgap power semiconductor devices are maturing, their application technology remains at the stage of silicon power devices, a bottleneck that hinders the full realization of SiC device performance.

[0003] Dual Active Bridge (DAB) has become a common topology for the power transmission stage of medium and high power power electronic converters due to its advantages such as high power density, simple control and relatively easy zero voltage turn-on.

[0004] However, traditional high-power DAB devices typically use silicon (Si) devices. Due to the inherent performance limitations of Si devices, traditional Si DAB systems can only operate at relatively low frequencies. Although some research has produced DAB converters with a power rating of 10kW, their operating frequency is below 20kHz. Consequently, magnetic components such as inductors and transformers are bulky, hindering the ability to achieve high power density and maintaining a low level of integration. Furthermore, traditional DAB designs typically separate passive and active components, further increasing device size. Summary of the Invention

[0005] In order to solve the problems existing in the prior art, the present invention provides a high-power density DAB integrated module based on SiC devices, which can increase the operating frequency of the device, reduce the volume of magnetic components and the overall device, and has a wide range of applications.

[0006] To achieve the above object, the present invention provides the following technical solutions:

[0007] A high-power-density DAB integrated module based on SiC devices, including a DAB main circuit board, SiC devices, a heat sink, an inductor, a transformer, and a half-bridge driver. The DAB main circuit board integrates an input detection circuit, an output detection circuit, a control circuit interface, and a drive circuit interface.

[0008] Among them, the DAB main circuit board is provided with an inductor area and a transformer area, which are respectively used to place the inductor and the transformer. The input connection end of the DAB main circuit board is fixed with an input DC filter capacitor, and the output connection end of the DAB main circuit board is fixed with an output DC filter capacitor. The SiC device is clamped and connected to the heat sink, and the heat sink is fixedly arranged on one side of the DAB main circuit board. The half-bridge driver and the heat sink are symmetrically arranged on the other side of the DAB main circuit board relative to the DAB main circuit board.

[0009] Preferably, the input detection circuit includes an input voltage detection circuit, and the input voltage detection circuit is integrated on one side of the input connection terminal of the DAB main circuit board.

[0010] Preferably, the output detection circuit includes an output voltage detection circuit and an output current detection circuit, and both the output voltage detection circuit and the output current detection circuit are integrated on one side of the output connection terminal of the DAB main circuit board.

[0011] Preferably, the input DC filter capacitor, the output DC filter capacitor, the SiC device and the heat sink are all connected to the DAB main circuit board through pin welding.

[0012] Preferably, the inductor and transformer are both connected to the DAB main circuit board by wire welding.

[0013] Preferably, the DAB main circuit board includes a primary side H-bridge and a secondary side H-bridge, the primary side of the transformer is connected to the inductor and the primary side H-bridge, the secondary side of the transformer is connected to the secondary side H-bridge, and the transformation ratio of the transformer is selected to be 1.

[0014] Preferably, the inductance value of the inductor is selected to be 30 μH, and the inductor is connected to the primary-side H-bridge and the primary side of the transformer.

[0015] Preferably, the primary-side H-bridge is composed of multiple SiC MOSFETs, which are used to convert the input DC power into a square wave and transmit it to the primary side of the transformer.

[0016] Preferably, the secondary-side H-bridge is composed of multiple SiC MOSFETs, which are used to convert the square wave on the secondary side of the transformer into a DC output.

[0017] Preferably, a power supply circuit and a plurality of operation indicator lights are integrated on the DAB main circuit board, and the power supply circuit is used to supply power to the input detection circuit, the output detection circuit and the operation indicator lights.

[0018] Compared with the prior art, the present invention has the following beneficial effects:

[0019] The present invention provides a high-power-density DAB integrated module based on SiC devices. By hollowing out the DAB main circuit board and placing magnetic components such as inductors and transformers in the hollowed-out space, the maximum height of the entire DAB module is reduced to the height of the transformer, thereby reducing the overall module height. Furthermore, the structure described in the present invention arranges the SiC device, heat sink, and half-bridge driver circuit side by side, so that the width of the half-bridge driver replaces the width of the heat sink. By compactly arranging other components in the device, the overall module volume is further reduced, thereby improving the power density of the DAB module.

[0020] The present invention uses high-voltage, high-power SiC devices as power components, significantly increasing the circuit's power handling capacity. Furthermore, due to the excellent properties of SiC devices at high frequencies, the operating frequency of the DAB module is significantly increased, significantly reducing the volume of the DAB module's magnetic components compared to those in traditional DAB devices. Furthermore, the present invention integrates the detection circuit with the main power circuit, reducing the overall device size while also minimizing parasitic parameters during detection signal transmission and improving signal detection accuracy. Furthermore, the main circuit design includes control circuit and drive circuit interface designs, facilitating integration with the controller and driver. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a typical DAB circuit diagram of the present invention;

[0022] Figure 2 This is a schematic diagram of the DAB main circuit based on SiC devices of the present invention;

[0023] Figure 3 This is a schematic diagram of a DAB voltage detection circuit based on SiC devices according to the present invention;

[0024] Figure 4 This is a schematic diagram of a DAB current detection circuit based on SiC devices according to the present invention;

[0025] Figure 5 This is a schematic diagram of the DAB control circuit interface circuit based on SiC devices of the present invention;

[0026] Figure 6 This is a schematic diagram of the DAB drive circuit interface circuit based on SiC devices of the present invention;

[0027] Figure 7 This is a schematic diagram of the DAB power supply and indicator light circuit based on SiC devices of the present invention;

[0028] Figure 8 This is a schematic structural diagram of the high power density DAB integrated module of the present invention;

[0029] Figure 9 Schematic diagram of the cross-section of the high power density DAB integrated module structure of the present invention;

[0030] Figure 10 This is a schematic diagram of the structure and dimensions of the high power density DAB integrated module of the present invention;

[0031] Figure 11 This is a working waveform diagram of a high power density DAB integrated module based on SiC devices according to an embodiment of the present invention, which was experimentally measured.

[0032] In the figure, 1-DAB main circuit board, 2-input connection terminal, 3-output connection terminal, 4-input DC filter capacitor, 5-output DC filter capacitor, 6-SiC device, 7-heat sink, 8-inductor, 9-transformer, 10-input detection circuit, 11-output detection circuit, 12-control circuit interface, 13-drive circuit interface, 14-half-bridge drive. DETAILED DESCRIPTION

[0033] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0034] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0035] The present invention is described in further detail below with reference to the accompanying drawings:

[0036] The present invention discloses a high-power-density DAB integrated module based on SiC devices, comprising a DAB main circuit board 1, a SiC device 6, a heat sink 7, an inductor 8, a transformer 9, and a half-bridge driver 14. The DAB main circuit board 1 integrates an input detection circuit 10, an output detection circuit 11, a control circuit interface 12, and a drive circuit interface 13.

[0037] Among them, the DAB main circuit board 1 is provided with an inductor area and a transformer area, which are respectively used to place the inductor 8 and the transformer 9. The input connection terminal 2 of the DAB main circuit board 1 is fixed with an input DC filter capacitor 4, and the output connection terminal 3 of the DAB main circuit board 1 is fixed with an output DC filter capacitor 5. The SiC device 6 is clamped and connected to the heat sink 7. The heat sink 7 is fixedly arranged on one side of the DAB main circuit board 1. The half-bridge driver 14 and the heat sink 7 are symmetrically arranged on the other side of the DAB main circuit board 1 relative to the DAB main circuit board 1.

[0038] The present invention provides a high-power-density DAB integrated module based on SiC devices. By hollowing out the DAB main circuit board 1 and placing magnetic components such as an inductor 8 and a transformer 9 in the hollowed-out area, the maximum height of the entire DAB module is reduced to the height of the transformer 9, thereby reducing the overall module height. Furthermore, the structure described in the present invention arranges the SiC device 6, heat sink 7, and half-bridge driver 14 side by side, so that the width of the half-bridge driver 14 replaces the width of the heat sink 7. By closely arranging other components in the device, the overall module volume is further reduced, thereby improving the power density of the DAB module.

[0039] The present invention uses high-voltage, high-power SiC devices 6 as power devices, significantly increasing the circuit's power handling capacity. Furthermore, due to the SiC devices' superior properties at high frequencies, the DAB module's operating frequency is significantly increased, significantly reducing the volume of the DAB module's magnetic components compared to those in traditional DAB devices. Furthermore, the present invention integrates the detection circuit with the main power circuit, reducing the overall device size while also minimizing parasitic parameters during detection signal transmission and improving signal detection accuracy. Furthermore, the main circuit design includes a control circuit interface 12 and a drive circuit interface 13, facilitating integration with the controller and driver.

[0040] The input detection circuit 10 includes an input voltage detection circuit, which is integrated on one side of the input connection terminal 2 of the DAB main circuit board 1 .

[0041] The output detection circuit 11 includes an output voltage detection circuit and an output current detection circuit, and both the output voltage detection circuit and the output current detection circuit are integrated on one side of the output connection terminal 3 of the DAB main circuit board 1 .

[0042] The input DC filter capacitor 4 , the output DC filter capacitor 5 , the SiC device 6 and the heat sink 7 are all connected to the DAB main circuit board 1 through pin welding.

[0043] The inductor 8 and the transformer 9 are both connected to the DAB main circuit board 1 by welding wires.

[0044] The DAB main circuit board 1 is further integrated with a power supply circuit and a plurality of operation indicator lights. The power supply circuit is used to supply power to the input detection circuit 10 , the output detection circuit 11 and the operation indicator lights.

[0045] Example

[0046] This embodiment provides a high-power-density DAB integrated module based on SiC devices, including:

[0047] DAB main circuit board 1, input connection terminal 2, output connection terminal 3, input DC filter capacitor 4, output DC filter capacitor 5, SiC device 6, heat sink 7, inductor 8, transformer 9, input detection circuit 10, output detection circuit 11, control circuit interface 12, drive circuit interface 13 and half-bridge driver 14;

[0048] The circuit of the DAB main circuit board 1 is the aforementioned highly integrated DAB main circuit design based on SiC devices.

[0049] Two areas are hollowed out on the DAB main circuit board 1 to respectively place the inductor 8 and the transformer 9, so that the maximum height of the entire DAB module is the height of the magnetic components;

[0050] The input connection terminal 2 and the output connection terminal 3 of the module are respectively placed on the input and output sides of the DAB main circuit board 1;

[0051] The input DC filter capacitor 4 is placed on the input side of the module and fixed below the DAB main circuit board 1;

[0052] The output DC filter capacitor 5 is placed on the output side of the module and fixed below the DAB main circuit board 1;

[0053] The SiC device 6 includes eight discrete SiC MOSFETs, which are fixed side by side below the DAB main circuit board 1;

[0054] The heat sink 7 includes four clamping half-bridge heat sinks, which are integrated with the overall module and fixed side by side below the DAB main circuit board 1;

[0055] The core model of the inductor 8 is ETD59 / 31 / 22, and the quantity is 1 pair. The key dimensions of the inductor 8 are: length 60mm, width 22mm, height 63mm;

[0056] The transformer 9 core model is EE65 / 32 / 27, and the number is 2 pairs. The key dimensions of the transformer 9 are: length 65mm, width 54mm, height 65mm;

[0057] The input detection circuit 10, the output detection circuit 11, the control circuit interface 12 and the drive circuit interface 13 are all integrated on the DAB main circuit board 1;

[0058] The half-bridge driver 14 includes four 1700V SiC MOSFET half-bridge drivers, which are fixed side by side on the DAB main circuit board 1;

[0059] Furthermore, the input DC filter capacitor 4 , the output DC filter capacitor 5 , the SiC device 6 and the heat sink 7 are electrically connected to the DAB main circuit board 1 through pin welding.

[0060] Furthermore, the inductor 8 and the transformer 9 are electrically connected to the main circuit by welding wires.

[0061] Furthermore, the G and S pins of the SiC device 6 are electrically connected to the half-bridge driver 14 through pin welding.

[0062] Furthermore, the SiC device 6 is clamped and connected to the heat sink 7 so that the shell of the SiC device 6 is in close contact with the surface of the heat sink 7 .

[0063] Furthermore, the input detection circuit 10 includes an input voltage detection circuit, which is integrated on the input side of the DAB main circuit board 1 to facilitate direct detection of the input voltage.

[0064] Furthermore, the output detection circuit 11 includes an output voltage detection circuit and an output current detection circuit, which are integrated on the output side of the DAB main circuit board 1 to facilitate detection of the output voltage and output current.

[0065] Furthermore, the four half-bridge drivers 14 and the four heat sinks 7 are placed symmetrically with respect to the DAB main circuit board 1 , so that the width of the driver replaces the width of the heat sink 7 .

[0066] The DAB integrated module structure described in this embodiment takes into account the volume of each device component. By hollowing out the main circuit board and placing magnetic components in the hollowed-out area, the maximum height of the entire DAB module is reduced to the height of transformer 9. Furthermore, this structure arranges the SiC MOSFET, heat sink 7, and half-bridge driver 14 side by side, so that the width of the half-bridge driver 14 replaces the width of the SiC MOSFET heat sink 7. By closely arranging the other components of the device, the volume of the entire module is further reduced, thereby improving the power density of the DAB module.

[0067] In the high power density DAB integrated module described in this embodiment, the design of the DAB main circuit board 1 includes:

[0068] DAB main power circuit, voltage detection circuit, current detection circuit, control circuit interface 12, drive circuit interface 13 and power supply and indicator light circuit;

[0069] The DAB main power circuit is designed to have the following specifications: input voltage 1000V, output voltage 1000V, output current 10A, carrying power 10kW, and operating frequency 50kHz;

[0070] The DAB main power circuit includes an input power connection terminal, an output load connection terminal, an input DC filter capacitor 4, an output DC filter capacitor 5, a primary side H-bridge, a secondary side H-bridge, an inductor 8 and a transformer 9;

[0071] The voltage detection circuit includes an input voltage detection circuit and an output voltage detection circuit;

[0072] The current detection circuit includes an output current detection circuit;

[0073] The control circuit interface 12 needs to be connected to a DAB controller, such as a DSP;

[0074] The drive circuit interface 13 needs to be connected to the SiC half-bridge drive 14 module;

[0075] The power supply and indicator light circuit includes power supply for a voltage detection circuit, a current detection circuit and an indicator light, and four operating status indicator lights.

[0076] Furthermore, the input DC filter capacitor 4 is composed of two 180 μF capacitors connected in series, with a total capacitance of 90 μF, and a voltage-equalizing resistor network is connected in parallel at both ends of each capacitor, and the resistance of the voltage-equalizing resistor is set to 0.8 MΩ.

[0077] Furthermore, the output DC filter capacitor 5 is composed of two 180 μF capacitors connected in series, with a total capacitance of 90 μF, and a voltage-equalizing resistor network is connected in parallel at both ends of each capacitor, and the resistance of the voltage-equalizing resistor is set to 0.8 MΩ.

[0078] Furthermore, the primary-side H-bridge is composed of four SiC MOSFETs, which convert the input DC power into a square wave and transmit it to the primary side of the transformer 9.

[0079] Furthermore, the secondary side H-bridge is composed of four SiC MOSFETs, which convert the square wave on the secondary side of the transformer into a DC output.

[0080] Furthermore, the inductor 8 has an inductance of 30 μH, and is connected to the primary side H-bridge and the primary side of the transformer 9 .

[0081] Furthermore, the transformation ratio n of the transformer 9 is selected to be 1, the primary side of the transformer 9 is connected to the inductor 8 and the primary-side H-bridge, and the secondary side is connected to the secondary-side H-bridge.

[0082] Furthermore, the voltage detection circuit needs to convert the voltage of 0 to 1500V into a voltage of 0 to 3.3V for sampling by the ADC module of the DSP.

[0083] Furthermore, the current detection circuit needs to convert the output current of 0 to 15A into a voltage of 0 to 3.3V for sampling by the ADC module of the DSP.

[0084] Furthermore, the power supply circuit converts the 5V power supply input by the auxiliary power supply into two 5V voltages and one 3.3V voltage to power the detection circuit and the operation status indicator light.

[0085] The DAB main circuit design described in this embodiment utilizes high-voltage, high-power SiC MOSFETs as power devices, enabling the circuit to handle power up to 10kW. Furthermore, due to the excellent high-frequency characteristics of the SiC device 6, the DAB module's operating frequency can be increased to 50kHz, significantly reducing the size of the module's magnetic components compared to those in traditional DAB devices. This design also integrates the detection circuit with the main power circuit, reducing the overall device size while minimizing parasitic parameters during detection signal transmission and improving signal detection accuracy. Furthermore, the main circuit design includes a control circuit interface 12 and a drive circuit interface 13, facilitating integration with the controller and driver.

[0086] The key dimensions of a high power density DAB integrated module based on SiC devices proposed in an embodiment of the present invention are as follows: Figure 10 Shown: Length 290mm, Width 129mm, Height 65mm, Volume approximately 2432cm 3 Its output power can reach 10kW and its power density is as high as 4.11W / cm 3 .

[0087] Specifically, the DAB integrated module of the present invention will be described in detail with reference to the accompanying drawings.

[0088] (1) The highly integrated DAB main circuit design based on SiC devices designed by the present invention includes the design of the main power circuit, voltage detection circuit, current detection circuit, control circuit interface, drive circuit interface, and power supply and indicator light circuit.

[0089] The main power circuit is the DAB main topology circuit. Figure 1 As shown, it includes input and output DC filter capacitors 5, a primary H-bridge, a secondary H-bridge, an inductor, and a transformer. Therefore, the DAB main power circuit topology in this invention is designed to be a typical DAB circuit, with four 1700V SiC MOSFETs selected as the power devices for both the primary and secondary H-bridges. Because SiC MOSFETs have excellent performance under high-frequency, high-power operating conditions, the technical specifications of the designed main power circuit are determined to be: input voltage 1000V, output voltage 1000V, output current 10A, power handling power 10kW, and operating frequency 50kHz.

[0090] The main circuit principle diagram of DAB based on SiC device of the present invention is as follows: Figure 2 As shown. The input and output capacitors in the main power circuit are composed of two aluminum electrolytic capacitors with a rated voltage of 600V and a capacitance of 180μF connected in series. Therefore, the maximum voltage resistance of the input and output capacitors is 1200V, and the equivalent capacitance is 60μF. Since the leakage current of each capacitor is different, a voltage-equalizing resistor needs to be connected in parallel to each capacitor when connected in series. The current flowing through the resistor must be much larger than the leakage current of the capacitor, otherwise the resistor cannot control the voltage distribution process. Assume that the current flowing through the resistor is 5 times the leakage current of the capacitor, and the leakage current of the capacitor is set to 0.003CU C , the minimum required equalizing resistor is 0.37MΩ. Considering a certain margin, the design uses six 1.2MΩ resistors connected in series and parallel to form a 0.8MΩ resistor network. The inductor value in the main power circuit is 30μH, which is connected to the primary-side H-bridge and the primary side of the transformer. The transformer ratio n is set to 1, and its primary side is connected to the inductor and the primary-side H-bridge, and the secondary side is connected to the secondary-side H-bridge.

[0091] The schematic diagram of the DAB voltage detection circuit based on SiC devices of the present invention is as follows: Figure 3 The voltage detection circuit includes an input voltage detection circuit and an output voltage detection circuit. The voltage detection circuit samples the voltage range of 0 to 1500V using a resistor divider and outputs a voltage of 0 to 3.3V via the AMC1301 DWVR chip and voltage conversion circuit, which is then transmitted to a controller, such as a DSP ADC module.

[0092] The schematic diagram of the DAB current detection circuit based on SiC devices of the present invention is as follows: Figure 4 The current detection circuit only includes the output current detection circuit. The current detection circuit uses a resistor network to convert the 0-15A current into a voltage, and then outputs a voltage of 0-3.3V through the AMC1301 DWVR chip and the voltage conversion circuit, which is then transmitted to the controller.

[0093] The DAB control circuit interface, drive circuit interface, power supply and indicator light circuit schematics of the present invention are shown in the following figure: Figure 5 、 6 and 7. The control circuit interface is composed of two 16-pin pin modules, through which a DAB controller such as a DSP can be connected to the main circuit. The drive circuit interface is composed of four 6-pin pin modules, and four half-bridge SiC MOSFET drivers can be connected to the main circuit through corresponding pins. The power supply mainly includes powering the operating status indicator light and the detection circuit. The power supply module needs to convert the 5V power supply input by the auxiliary power supply into two 5V voltages and one 3.3V voltage, using the ISE0505 chip to convert 5V-5V and the LM1117-3.3 to convert 5V-3.3V. The indicator lights mainly refer to the four operating status indicator lights, which can display whether the current DAB operation is normal and, if not, what faults have occurred, through different arrangements and combinations, to facilitate maintenance and inspection.

[0094] (2) The high-power-density DAB integrated module structure designed by the present invention includes: a DAB main circuit board 1, an input connection terminal 2, an output connection terminal 3, an input DC filter capacitor 4, an output DC filter capacitor 5, a SiC device 6, a heat sink 7, an inductor 8, a transformer 9, an input detection circuit 10, an output detection circuit 11, a control circuit interface 12, a drive circuit interface 13, and a layout structure between the half-bridge driver 14.

[0095] like Figure 8 and 9 As shown, the circuit design of the DAB main circuit board 1 is as described in step (1). The module input connection terminal 2 and output connection terminal 3 are respectively placed on the input and output sides of the DAB main circuit board 1, wherein the input connection terminal 2 is electrically connected to the input power supply, and the output connection terminal 3 is electrically connected to the load.

[0096] Because the DAB integrated module has a high power rating and high operating frequency, a suitable heat sink 7 is required for the SiC device 6 to prevent thermal damage to the device due to excessive temperature increases caused by losses during operation. Considering the integrated design between the heat dissipation system and the DAB module, the heat sink 7 in the present invention is directly fixed to the DAB main circuit board 1 via pin welding, improving the integration of the entire module. The half-bridge driver 14 includes four 1700V SiCMOSFET half-bridge drivers. Figure 9 In order to make full use of the width space, eight SiC devices 6 are combined with four heat sinks 7 and distributed side by side with four half-bridge drivers 14, and the width of the half-bridge driver 14 is used to replace the width of the heat sink 7.

[0097] The input DC filter capacitor 4 and the output DC filter capacitor 5 are both composed of two aluminum electrolytic capacitors connected in series, which are fixed to the bottom of the DAB main circuit board 1 and electrically connected to the DAB main circuit board 1 through pins.

[0098] Because the DAB module of the present invention operates at a frequency of 50kHz, the volume of the circuit's magnetic components can be significantly reduced. The inductor 8's core material is 3C97 ferrite, model ETD59 / 31 / 22, with one core pair. The winding is made of 0.05mm diameter Litz wire with a total strand count of 1200, with nine turns. Its key dimensions are: length 60mm, width 22mm, height 63mm. The transformer 9's core is model EE65 / 32 / 27, with two pairs. The winding is also made of 0.05mm diameter Litz wire with a total strand count of 1200. Both the primary and secondary coils have 22 turns. Its key dimensions are: length 65mm, width 54mm, height 65mm.

[0099] For the entire DAB module, the input and output DC filter capacitors 4 and 5 are 40mm tall, the heat sink 7 is 46mm tall, the inductor 8 is 63mm tall, and the transformer 9 is 65mm tall. Therefore, the transformer 8 is the tallest component in the entire module, followed by the inductor 9. Therefore, to fully utilize the height space, two areas are hollowed out in the DAB main circuit board 1 to house the inductor 8 and transformer 9, respectively.

[0100] Because the aforementioned highly integrated SiC device-based DAB main circuit design integrates the DAB main power circuit, voltage detection circuit, current detection circuit, and control circuit interface, the input detection circuit 10, output detection circuit 11, control circuit interface 12, and driver circuit interface 13 are all integrated onto the DAB main circuit board 1. The input detection circuit 10 primarily comprises an input voltage detection circuit that samples the input voltage, and is therefore placed on the input side of the DAB main circuit board 1 to minimize parasitic parameters during the detection process. The output detection circuit 11 primarily comprises an output voltage detection circuit and an output current detection circuit that samples the output voltage and current, and is therefore placed on the output side of the DAB main circuit board 1 to minimize parasitic parameters during the detection process. The control circuit interface 12 simultaneously transmits PWM signals to the four half-bridge drivers 14 on the primary and secondary sides, and is therefore placed midway between them. Furthermore, to facilitate connection with the DAB module's controller, the control circuit interface 12 is placed at the module's edge. The driving circuit interface 13 needs to be connected to four half-bridge drivers 14 , so the four driving circuit interfaces 13 are placed side by side and connected to the half-bridge drivers 14 .

[0101] like Figure 11 As shown in FIG, the experimentally measured operating waveform of the high power density DAB integrated module based on SiC devices of the present invention is given. The experimental conditions are: input voltage of 1000V, output voltage reference value of 1000V, output load resistance of 100Ω, and operating frequency of 50kHz. Figure 11 The output voltage of the DAB integrated module of the present invention is stable at 1000V. It works stably while carrying 10kW power, has high reliability, and achieves high power density.

[0102] The present invention discloses a high-power-density DAB integrated module based on SiC devices. In response to the problem of low power density of traditional SiDAB circuits, the present invention proposes a highly integrated DAB main circuit design scheme based on SiC devices and a high-power-density DAB integrated module structure. By selecting SiC MOSFET as the power device, the present invention improves the module's carrying power and operating frequency, thereby significantly reducing the volume of the circuit's magnetic components. At the same time, the present invention makes full use of the overall space of the device, and modularizes the DAB device by integrating the detection circuit with the main power circuit, integrating the heat dissipation system with the DAB module, and optimizing the compact structure and layout of each component of the module. The high-power-density DAB integrated module based on SiC devices proposed by the present invention can process a power level of up to 10kW while having a volume of only 2432cm 3 , power density up to 4.11W / cm 3 .

[0103] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the field should understand that the specific implementation methods of the present invention can still be modified or replaced by equivalents. Any modification or equivalent replacement that does not depart from the spirit and scope of the present invention should be covered by the scope of protection of the claims of the present invention.

Claims

1. A high power density DAB integrated module based on SiC devices, characterized in that: The DAB main circuit board (1) comprises a SiC device (6), a heat sink (7), an inductor (8), a transformer (9) and a half-bridge driver (14); the DAB main circuit board (1) is integrated with an input detection circuit (10), an output detection circuit (11), a control circuit interface (12) and a drive circuit interface (13); The DAB main circuit board (1) is provided with an inductor area and a transformer area, respectively used for placing the inductor (8) and the transformer (9); an input DC filter capacitor (4) is fixed to the input connection end (2) of the DAB main circuit board (1); an output DC filter capacitor (5) is fixed to the output connection end (3) of the DAB main circuit board (1); the SiC device (6) is clamped and connected to a heat sink (7); the heat sink (7) is fixedly arranged on one side of the DAB main circuit board (1); and the half-bridge driver (14) and the heat sink (7) are symmetrically arranged on the other side of the DAB main circuit board (1) relative to the DAB main circuit board (1); The input detection circuit (10) comprises an input voltage detection circuit, and the input voltage detection circuit is integrated on one side of the input connection terminal (2) of the DAB main circuit board (1); The output detection circuit (11) comprises an output voltage detection circuit and an output current detection circuit, and both the output voltage detection circuit and the output current detection circuit are integrated on one side of the output connection terminal (3) of the DAB main circuit board (1); The height of the input DC filter capacitor (4) and the output DC filter capacitor (5) is 40 mm, the height of the single heat sink (7) is 46 mm, the height of the inductor (8) is 63 mm, and the height of the transformer (9) is 65 mm; Eight SiC devices (6) are combined with four heat sinks (7) and distributed side by side with four half-bridge drivers (14), and the width of the heat sink (7) is replaced by the width of the half-bridge drivers (14).

2. A high power density DAB integrated module based on SiC devices according to claim 1, characterized in that: The input DC filter capacitor (4), the output DC filter capacitor (5), the SiC device (6) and the heat sink (7) are all connected to the DAB main circuit board (1) through pin welding.

3. The high power density DAB integrated module based on SiC devices according to claim 1, characterized in that: The inductor (8) and the transformer (9) are both connected to the DAB main circuit board (1) through wire welding.

4. The high power density DAB integrated module based on SiC devices according to claim 1, characterized in that: The DAB main circuit board (1) comprises a primary side H-bridge and a secondary side H-bridge, the primary side of the transformer (9) is connected to the inductor (8) and the primary side H-bridge, the secondary side of the transformer (9) is connected to the secondary side H-bridge, and the transformation ratio of the transformer (9) is selected to be 1.

5. The high power density DAB integrated module based on SiC devices according to claim 4, characterized in that: The inductance value of the inductor (8) is selected to be 30 μH, and the inductor (8) is connected to the primary side H bridge and the primary side of the transformer (9).

6. A high power density DAB integrated module based on SiC devices according to claim 4, characterized in that: The primary side H-bridge is composed of a plurality of SiC MOSFETs and is used to convert the input direct current into a square wave and transmit it to the primary side of the transformer (9).

7. The high power density DAB integrated module based on SiC devices according to claim 4, characterized in that: The secondary side H-bridge is composed of a plurality of SiC MOSFETs and is used to convert the square wave on the secondary side of the transformer (9) into a direct current output.

8. The high power density DAB integrated module based on SiC devices according to claim 1, characterized in that: The DAB main circuit board (1) is also integrated with a power supply circuit and a plurality of operation indicator lights. The power supply circuit is used to supply power to the input detection circuit (10), the output detection circuit (11) and the operation indicator lights.

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