A power amplifier rectifier dual mode switching circuit

Abstract

The application discloses a kind of power amplifier rectifier dual-mode switching circuit, the circuit includes input / output matching network, gate / drain bias network, gallium nitride transistor, coupler, phase shifter, DC power supply, radio frequency input power supply, radio frequency / DC switch, transmit / receive antenna and detector, voltage stabilizer.Utilize time reversal dual theory, realize the switching of power amplification and rectification function of equipment under the same circuit structure, the application can be divided into power amplifier and rectifier two modes, the switching of two modes only needs a DC switch and a radio frequency switch to realize, can reach higher power efficiency, can realize the wireless charging and discharging of equipment, can be used as charging end and can be used as power generation end.

Description

Technical Field

[0001] This invention relates to the field of wireless power transmission systems, and in particular to a dual-mode switching circuit for a power amplifier rectifier. Background Technology

[0002] Wireless power transfer technology can effectively ensure the endurance of micro drones and can also be used for wireless power supply of sensors. However, in existing technologies, devices cannot simultaneously achieve power amplification and rectification functions. Therefore, there is an urgent need in the field for a radio frequency circuit that can simultaneously achieve power amplification and rectification. Summary of the Invention

[0003] This invention proposes a dual-mode switching circuit for a power amplifier and rectifier. This radio frequency circuit can simultaneously function as a power amplifier in a transmitter and a rectifier in a receiver with a single circuit structure. Switching between these two modes can be accomplished simply by applying a switch. This circuit enables wireless charging and discharging of devices, serving as both a charging terminal and a power generation terminal.

[0004] Specifically, the present invention provides the following technical solutions:

[0005] On one hand, the present invention proposes a dual-mode switching circuit for a power amplifier rectifier, the circuit including an input / output matching network, a gate bias network, a drain bias network, an input / output harmonic control network, a gallium nitride transistor, a coupler, a phase shifter, a DC power supply, an RF input power supply, an RF switch, a DC switch, a transmitting antenna, a receiving antenna, a detector, and a voltage regulator;

[0006] The circuit includes a power amplifier mode and a rectifier mode.

[0007] Furthermore, in power amplifier mode,

[0008] The radio frequency switch is connected to a power source, and the DC switch is connected to a drain DC power supply.

[0009] The DC voltage of the gate bias network is provided by a portion of the RF input power coupled out of the input RF signal, which is rectified by a detector to generate the voltage; the DC voltage of the drain bias network is provided by a separate voltage source through a DC switch.

[0010] The phase shifter and the coupler at the output end are not working, and the detector near the output end is in an open circuit state.

[0011] The power source provides an input power signal, which is connected to the input matching transistor to achieve optimal power input.

[0012] The gate bias network and drain bias network provide gate and drain DC bias voltages respectively. The gate DC bias voltage and drain DC bias voltage provide the static operating point for the transistor. The input terminal passes through the transistor and then through the output matching circuit to match the amplified power signal to the transmitting antenna. The amplified power signal is then radiated out through the transmitting antenna to complete the power amplification.

[0013] In rectifier mode

[0014] The radio frequency switch is connected to the phase shifter, and the DC switch is connected to the equivalent resistor;

[0015] The input coupler and detector are not working;

[0016] When the output terminal in power amplifier mode is switched to the input terminal in rectifier mode, the receiving antenna receives the radio frequency signal, and the received signal is passed through a coupler. Part of the input power is passed through a detector and a voltage regulator to provide the DC voltage required by the gate bias network, part of it is passed through a phase shifter to provide the small signal input power of the gate, and the remaining input power is matched to the transistor through the output matching circuit. The converted DC power is output to the equivalent resistance.

[0017] Furthermore, the voltage regulator provides a stable voltage function.

[0018] Furthermore, the switching between the power amplifier mode and the rectifier mode is controlled by an RF switch and a DC switch.

[0019] Furthermore, in the power amplifier mode, the RF switch is connected to a power source, the DC switch is connected to a DC power supply, and the output antenna is in transmit antenna mode.

[0020] Furthermore, in the rectifier mode, the RF switch is connected to the phase shifter port, the DC switch is connected to the equivalent resistance port, and the output port antenna is converted into a receiving antenna to provide RF energy input to the rectifier.

[0021] Furthermore, in the power amplifier mode, the power amplifier is a high-efficiency Class-F / F amplifier. -1 The power amplifier provides baseband input power at the input terminal, and the gate and drain bias network provides DC supply voltage to keep the transistor at a suitable quiescent operating point. The input and output matching network provides matching between the transistor's input and output terminals, enabling the acquisition of input power from the input terminal and the output power from the output terminal. The harmonic control network controls the second and third harmonics of the output RF signal to obtain the maximum DC-to-RF power conversion efficiency in power amplifier mode.

[0022] Furthermore, in the rectifier mode, the rectifier is composed of a time-reversed power amplifier, and the equivalent resistance replaces the DC power supply port in the amplifier. The theoretical value of the equivalent resistance is equal to the ratio of the drain DC bias voltage to the DC bias current in the power amplifier mode. The output port of the power amplifier is converted into the input port of the rectifier. The input power is divided into two parts through a coupler. The first part is required to be the drain DC power in the corresponding power amplifier mode and is input through the output path in the power amplifier mode. The second part is required to be the base frequency input power in the corresponding power amplifier mode. The DC power obtained by rectification is output to the load through the drain bias circuit.

[0023] Furthermore, the power source has an external input impedance of 50Ω.

[0024] Furthermore, the power amplifier and rectifier share the same circuit structure, which is a high-efficiency gallium nitride Class-F / F circuit. -1 Power amplifier structure.

[0025] This invention discloses a dual-mode switching circuit for a power amplifier rectifier. The circuit includes an input / output matching network, a gate / drain bias network, a gallium nitride transistor, a coupler, a phase shifter, a DC power supply, an RF input power supply, an RF / DC switch, a transmit / receive antenna, a detector, and a voltage regulator. Utilizing time-reversal duality theory, it achieves switching between power amplification and rectification functions within the same circuit structure. This invention can operate in two modes: power amplifier and rectifier. Switching between these modes requires only a DC switch and an RF switch, both achieving high power efficiency. It enables wireless charging and discharging of the device, serving as both a charging and generating end. Attached Figure Description

[0026] Appendix Figure 1 This is a structural diagram of a power amplifier;

[0027] Appendix Figure 2 For high-efficiency Class-F / F -1 The rectifier structure diagram of the power amplifier design;

[0028] Appendix Figure 3 This is a schematic diagram of a dual-mode integrated circuit structure for a power amplifier and rectifier.

[0029] Appendix Figure 4 A schematic diagram of an improved dual-mode integrated circuit structure for power amplifiers and rectifiers. Detailed Implementation

[0030] This invention proposes a dual-mode switching circuit for a power amplifier rectifier, a radio frequency circuit structure that can be used in both transmitting and receiving circuits. This structure can realize both power amplification and rectifier functions. The circuit structure is based on Class-F / F... -1 The power amplifier consists of a basic structure, coupler, phase shifter, DC / RF switch, receiving / transmitting antenna, DC power supply, baseband power supply, detector, and voltage regulator.

[0031] To further clarify and fully describe the technical solution of the present invention, the following embodiments specifically describe the technical solution of the dual-mode integrated power amplifier rectifier:

[0032] First Implementation Method

[0033] (1) A standalone power amplifier, such as Figure 1 As shown, the power amplifier consists of input and output matching circuits, drain and gate biasing circuits, transistors, an input power source, a DC power supply, and an output load. The purpose of input matching is to provide the transistor with the maximum possible input power without reflection; the purpose of the output matching circuit is to maximize the output of the amplified power to the 50Ω load; the purpose of the drain and gate biasing circuit is to provide the transistor with a suitable operating state; the input power source provides the gate input power, and the DC power supply provides the DC voltage required for biasing.

[0034] (2) A rectifier in power amplifier mode, wherein the rectifier is based on time-reversal duality theory and will be powered by... Figure 1 The resulting high-efficiency Class-F / F -1 A power amplifier can be inverted to function as a rectifier, such as... Figure 2 As shown, this power amplifier consists of input and output matching circuits, drain and gate biasing, transistors, a DC power supply, an output load, and a coupler / phase shifter. The power amplifier-type rectifier is constructed by reversing the time of the power amplifier, and the Thevenin equivalent resistance R... D Replace V in the amplifier DC DC power supply port, theoretical value R D Equal to V in the power amplifier DC / I DC The actual optimal value may be smaller than this. The output port of the amplifier is converted into the input port of the rectifier. The input power is divided into two parts through the coupler. One part is required to be the drain DC power in the corresponding power amplifier mode and is input through the output path in the power amplifier mode. The other part is required to be the fundamental frequency input power in the corresponding power amplifier mode. This time-reversal duality theory is used to achieve the function of a high-efficiency rectifier.

[0035] (3) A dual-mode integrated circuit structure for a power amplifier and rectifier, which implements both power amplification and rectification functions using the same circuit. Figure 1 , Figure 2 The circuit structure uses two switches to control the switching between two modes. The circuit diagram is shown below. Figure 3 As shown, when RF switch S1 is connected to input matching, the input signal is provided by an external power source, and the gate and drain bias voltages are provided by an external voltage source. DC switch S2 is connected to V DC When the circuit operates in power amplifier mode, the amplified output power is radiated out through the antenna via the output matching circuit; when the RF switch S1 is connected to the phase shifter and the DC switch S2 is connected to R... D At this time, the circuit operates in rectifier mode. In this mode, the RF signal passes through the receiving antenna and coupler, with one part serving as the gate RF drive input signal and the other part as the rectifier input signal. After passing through the matching circuit, the rectified signal is finally output to R through the drain bias circuit. D The load enables rectification.

[0036] Second Implementation Method

[0037] To further optimize the technical solution of this invention, this embodiment proposes an improved integrated power amplifier and rectifier design, with the circuit structure as follows: Figure 4 As shown, when RF switch S1 is connected to the input matching circuit, the input signal is provided by an external power source. The gate bias voltage is partially coupled from the input power, rectified by the detector, and stabilized by the voltage regulator to provide a suitable gate bias voltage. Since the drain requires a relatively large DC voltage, the drain bias voltage is provided by an external DC power supply. DC switch S2 is connected to V... DC The circuit operates in power amplifier mode. The transistor output, via a harmonic control circuit and an output matching circuit, radiates the amplified output power through the antenna. When RF switch S1 is connected to the phase shifter and DC switch S2 is connected to R… D When the circuit operates in rectifier mode, the RF signal passes through the receiving antenna and coupler, with a portion of the power coupled out. This power is then used by the detector and voltage regulator to provide the gate DC voltage for the gate bias circuit. The drain bias voltage is relatively large and is supplied by an external DC power supply. Part of this voltage serves as the gate RF drive input signal, and the other part serves as the rectifier input signal. After passing through the matching circuit, the rectified signal is finally output to R through the drain bias circuit. D The load enables rectification.

[0038] The final dual-mode integrated circuit structure of the power amplifier rectifier is as follows: Figure 4As shown, both circuit structures can achieve both power amplification and rectification functions, and the switching between the two modes is controlled by two switches. In power amplifier mode, RF switch S1 is connected to an external power source V with an input impedance of 50Ω. S DC switch S2 is connected to the drain DC power supply V. DC The gate input signal passes through the input matching circuit and enters the transistor, where it is amplified. The output signal is then matched with the output matching circuit by the harmonic control circuit and radiated out at the transmitting antenna. In rectifier mode, RF switch S1 is connected to the phase shifter port, and DC switch S2 is connected to R... D The resistor port and output port antenna are converted into receiving antennas to provide RF energy input to the rectifier. A small portion of the input RF signal is used as gate drive power after passing through the coupler, and the other portion serves as the input signal to the rectifier. Finally, the rectified signal is output to R through the drain bias circuit. D load.

[0039] This invention discloses a dual-mode switching circuit for a power amplifier rectifier, including an input / output matching network, a gate / drain bias network, a gallium nitride transistor, a coupler, a phase shifter, a DC power supply, an RF input power supply, an RF / DC switch, a transmit / receive antenna, a detector, and a voltage regulator. Utilizing time-reversal duality theory, it achieves switching between power amplification and rectification functions within the same circuit structure. This invention can operate in two modes: power amplifier and rectifier. Switching between these modes requires only a DC switch and an RF switch, both achieving high power efficiency. It enables wireless charging and discharging of the device, serving as both a charging and generating end.

[0040] The embodiments of the present invention described above are combinations of elements and features of the invention. Unless otherwise stated, the elements or features are to be considered optional. Individual elements or features may be practiced without combination with other elements or features. Furthermore, embodiments of the invention may be constructed by combining some elements and / or features. The order of operations described in the embodiments of the invention may be rearranged. Some constructions of any embodiment may be included in another embodiment and may be replaced by corresponding constructions of another embodiment. It will be apparent to those skilled in the art that claims in the appended claims that are not expressly referenced in each other may be combined to form embodiments of the invention, or may be included as new claims in modifications made after the submission of this invention.

[0041] In firmware or software configuration, the embodiments of the present invention can be implemented in the form of modules, processes, functions, etc. Software code can be stored in a memory unit and executed by a processor. The memory unit is located inside or outside the processor and can send data to and receive data from the processor via various known means.

[0042] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A dual-mode switching circuit for a power amplifier rectifier, characterized in that, The circuit includes an input / output matching network, a gate bias network, a drain bias network, an input / output harmonic control network, a gallium nitride transistor, a coupler, a phase shifter, a DC power supply, an RF input power supply, an RF switch, a DC switch, a transmitting antenna, a receiving antenna, a detector, and a voltage regulator. The circuit includes a power amplifier mode and a rectifier mode; In power amplifier mode The radio frequency switch is connected to a power source, and the DC switch is connected to a drain DC power supply. The DC voltage of the gate bias network is provided by a portion of the RF input power coupled out of the input RF signal, which is rectified by a detector to generate the voltage; the DC voltage of the drain bias network is provided by a separate voltage source through a DC switch. The phase shifter and the coupler at the output end are not working, and the detector near the output end is in an open circuit state. The power source provides an input power signal, which is connected to the input matching transistor to achieve optimal power input. The gate bias network and drain bias network provide gate and drain DC bias voltages respectively. The gate DC bias voltage and drain DC bias voltage provide the static operating point for the transistor. The input terminal passes through the transistor and then through the output matching circuit to match the amplified power signal to the transmitting antenna. The amplified power signal is then radiated out through the transmitting antenna to complete the power amplification. In rectifier mode The radio frequency switch is connected to the phase shifter, and the DC switch is connected to the equivalent resistor; The coupler and detector at the input are not working; When the output terminal in power amplifier mode is switched to the input terminal in rectifier mode, the receiving antenna receives the radio frequency signal, and the received signal is passed through a coupler. Part of the input power is passed through a detector and a voltage regulator to provide the DC voltage required by the gate bias network, part of it is passed through a phase shifter to provide the small signal input power of the gate, and the remaining input power is matched to the transistor through the output matching circuit. The converted DC power is output to the equivalent resistance.

2. The dual-mode switching circuit for the power amplifier rectifier according to claim 1, characterized in that, A voltage regulator provides a stable voltage.

3. The dual-mode switching circuit for the power amplifier rectifier according to claim 1, characterized in that, The switching between the power amplifier mode and the rectifier mode is controlled by an RF switch and a DC switch.

4. The dual-mode switching circuit for the power amplifier rectifier according to claim 1, characterized in that, In the power amplifier mode, the RF switch is connected to the power source, the DC switch is connected to the DC power supply, and the output antenna is in transmit antenna mode.

5. The dual-mode switching circuit for the power amplifier rectifier according to claim 1, characterized in that, In the rectifier mode, the RF switch is connected to the phase shifter port, the DC switch is connected to the equivalent resistance port, and the output port antenna is converted into a receiving antenna to provide RF energy input to the rectifier.

6. The dual-mode switching circuit for the power amplifier rectifier according to claim 1, characterized in that, In the power amplifier mode, the power amplifier is a high-efficiency Class-F / F. -1 The power amplifier provides baseband input power at the input terminal, and the gate and drain bias network provides DC supply voltage to keep the transistor at its static operating point. The input and output matching network provides matching between the transistor's input and output terminals, enabling the input power to be obtained from the input terminal and the output power to be output from the output terminal. The harmonic control network controls the second and third harmonics of the output RF signal to obtain the maximum DC-to-RF power conversion efficiency in power amplifier mode.

7. The dual-mode switching circuit for the power amplifier rectifier according to claim 1, characterized in that, In the rectifier mode, the rectifier is composed of a time-reversed power amplifier. The equivalent resistance replaces the DC power supply port in the amplifier. The theoretical value of the equivalent resistance is equal to the ratio of the drain DC bias voltage to the DC bias current in the power amplifier mode. The output port of the power amplifier is converted into the input port of the rectifier. The input power is divided into two parts through a coupler. The first part is required to be the drain DC power in the corresponding power amplifier mode and is input through the output path in the power amplifier mode. The second part is required to be the base frequency input power in the corresponding power amplifier mode. The DC power obtained by rectification is output to the load through the drain bias circuit.

8. The dual-mode switching circuit for the power amplifier rectifier according to claim 3, characterized in that, The power source has an external input impedance of 50Ω.

9. The dual-mode switching circuit for the power amplifier rectifier according to claim 1, characterized in that: The power amplifier and rectifier share the same circuit structure, which is a high-efficiency gallium nitride Class-F / F circuit. -1 Power amplifier structure.

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