W-band Radio Frequency Package Structure and Preparation Method

Abstract

This application is applicable to the field of microwave packaging technology, and provides a W-band radio frequency package structure and a preparation method. The W-band radio frequency package structure includes: a substrate, which is provided with through holes and blind grooves penetrating both sides of the substrate. Among them, the substrate is divided into a top substrate and a bottom substrate that are oppositely arranged; a conductor layer, which is formed on both sides of the substrate, and the conductor layers on both sides of the substrate are interconnected through the through holes; a microstrip probe, which is semi-suspended on the conductor layer; a chip, which is arranged on the conductor layer, is bonded to the microstrip probe and is isolated from each other. The W-band radio frequency package provided by this application has a wide-band and low-loss dielectric waveguide transmission structure, and at the same time has the characteristics of high precision, good consistency, simple assembly and airtightness.

Description

Technical Field

[0001] This application belongs to the technical field of microwave packaging, and particularly relates to a W-band radio frequency package structure and a preparation method thereof. Background Art

[0002] With the continuous growth of the application requirements of wireless communication, the existing spectrum resources are becoming increasingly tense. At the same time, the growth of communication capacity also requires a wider working bandwidth, and the operating frequency of microwave radio frequency circuits is continuously increasing from S / C / X / K. The terahertz technology in higher frequency bands is also becoming increasingly mature. Corresponding chips, such as low-noise amplifier chips, power amplifier chips, detector chips, frequency multiplier chips, mixer chips, etc., have entered the stage of engineering batch application, but the corresponding packaging still stays at the stage of assembling chips and microstrip lines using traditional microassembly processes in metal cases. The assembly consistency is poor, airtightness cannot be achieved, and it is difficult to meet the usage requirements in high-reliability environments.

[0003] In the terahertz high-frequency band around 100 GHz, the signal transmission loss is very obvious. Terahertz radio frequency modules usually use metal packages integrated with metal waveguides for packaging. Function chips are mounted in partitions inside, and a microstrip-waveguide conversion module for coupling the chips and the antenna, together with a matching metal waveguide, constitutes a complete TR module. Considering the machinability and assembly producibility of the metal package, it is difficult to achieve airtight packaging of the chips, and the long-term reliability is not high. Summary of the Invention

[0004] To overcome the problems existing in the related art, the embodiments of this application provide a W-band radio frequency package structure and a preparation method thereof.

[0005] This application is implemented through the following technical solutions:

[0006] In a first aspect, the embodiments of this application provide a W-band radio frequency package structure, including: a substrate, which is provided with through holes and blind grooves penetrating both sides of the substrate, wherein the substrate includes a top substrate and a bottom substrate arranged opposite to each other; a conductor layer formed on both sides of the substrate, and the conductor layers on both sides of the substrate are interconnected through the through holes; a microstrip probe semi-suspended on the conductor layer; and a chip disposed on the conductor layer, bonded to the microstrip probe and isolated from each other.

[0007] Based on the first aspect, in some possible implementation manners, the top substrate and the bottom substrate are buckled to form a hermetically sealed package case.

[0008] Based on the first aspect, in some possible implementation manners, the microstrip probe is disposed on the conductor layer generated by the bottom substrate, and cooperates with the package case formed by the substrate to form a reflection cavity structure.

[0009] Based on the first aspect, in some possible implementation manners, the material of the substrate is ceramic medium.

[0010] Based on the first aspect, in some possible implementation manners, the through hole is filled with a metal conductor, and the conductor layers on both sides of the substrate are interconnected through the metal conductor.

[0011] In a second aspect, an embodiment of the present application provides a method for manufacturing a W-band radio frequency package, including: forming conductor layers on both sides of a substrate, the substrate is provided with a through hole and a blind via that penetrate through both sides of the substrate, and the conductor layers on both sides of the substrate are interconnected through the through hole, where the substrate is divided into a top surface substrate and a bottom surface substrate; arranging a microstrip probe on the bottom surface substrate, the microstrip probe is semi-suspended on the conductor layer generated by the bottom surface substrate; arranging a chip on the bottom surface substrate, the chip is connected to the microstrip probe through a bonding wire and is isolated from each other; combining the top surface substrate and the bottom surface substrate to obtain a package.

[0012] Based on the second aspect, in some possible implementation manners, forming conductor layers on both sides of the substrate includes: opening a through hole in the substrate, sputtering a metal seed layer on both sides of the substrate, and the metal seed layers on both sides of the substrate are connected through the through hole; coating a photoresist layer on the metal seed layer, and obtaining a surface pattern through photolithography; performing electroplating and planarization processing on the substrate according to a first preset pattern area, and performing local thickening processing on the top surface substrate; removing the photoresist layer, performing photolithography again, obtaining an etching pattern, and removing the metal seed layer in a non-second preset pattern area through chemical etching; opening a blind via on one side of the substrate and cleaning the blind via.

[0013] Based on the second aspect, in some possible implementation manners, the local thickening processing required for the top surface substrate includes: locally thickening the top surface substrate according to the surface pattern to obtain the first preset pattern, and preparing a bottom welding pad on the basis of the first preset pattern; locally thickening the top surface substrate based on the first preset pattern to obtain the second preset pattern, and preparing a top surface antenna post on the basis of the first preset pattern.

[0014] Based on the second aspect, in some possible implementation manners, arranging the microstrip probe on the bottom surface substrate includes: semi-suspending the microstrip probe on the conductor layer, the suspended part of the microstrip probe is located above the blind via of the bottom surface substrate, and the non-suspended part of the microstrip probe is mounted on the bottom surface substrate; arranging the chip on the bottom surface substrate includes: the chip is mounted on the bottom surface substrate, one end is connected to the bottom surface substrate through a bonding wire, the other end of the chip is isolated from the microstrip probe and is connected through a bonding wire.

[0015] Based on the second aspect, in some possible implementation manners, the combination of the top surface substrate and the bottom surface substrate includes: dividing the top surface substrate and the bottom surface substrate by laser scribing; disposing the chip and the microstrip probe on the mounting surface of the bottom surface substrate; and forming a package cavity by welding the top surface substrate and the bottom surface substrate.

[0016] The above-mentioned W-band radio frequency package structure and manufacturing method form a highly reliable hermetic package by buckling a ceramic bottom plate and a ceramic cover plate with local metallization respectively. The bottom plate and the cover plate of the ceramic package are respectively processed with blind grooves and locally metallized. Cooperating with the low-loss microstrip probes mounted semi-suspended in the package, a reflection cavity structure is formed. The chips mounted in the package complete signal amplification, mixing and other processing, and are transmitted through the microstrip. The radio frequency signal transmitted through the microstrip is transmitted out of the hermetic package through the microstrip probe suspended in the coupling cavity with a large-area metallized inner wall at a specific area where the coupling cavity is not metallized, through the low-loss and ultra-thin ceramic medium. Then, it is matched with the metal antenna open radiation unit on the outside to transmit the high-frequency signal. Reception is the reverse process. By introducing a metal-ceramic hermetic package integrating a reflection cavity, a low-loss dielectric waveguide and a waveguide antenna radiation unit, the hermetic package of the W-band high-frequency TR module is realized, providing support for the application of high-frequency and highly reliable radio frequency microwave circuits.

[0017] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit this specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0019] Figure 1 is a schematic structural diagram of a W-band radio frequency package provided by an embodiment of the present application;

[0020] Figure 2 is a schematic flowchart of a method for manufacturing a W-band radio frequency package provided by an embodiment of the present application;

[0021] Figure 3 is a schematic flowchart of the processing of the top surface substrate in the method for manufacturing a W-band radio frequency package provided by an embodiment of the present application;

[0022] Figure 4 is a schematic flowchart of the processing of the bottom surface substrate in the method for manufacturing a W-band radio frequency package provided by an embodiment of the present application. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0023] In the following description, specific details such as specific system architectures and technologies are presented for the purpose of illustration rather than limitation, so as to provide a thorough understanding of the embodiments of the present application. However, those skilled in the art should understand that the present application can also be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to avoid unnecessary details from obscuring the description of the present application.

[0024] It should be understood that when used in the specification of the present application and the appended claims, the term "comprising" indicates the presence of the described features, wholes, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or their combinations.

[0025] It should also be understood that the term "and / or" as used in the specification of the present application and the appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0026] As used in the specification of the present application and the appended claims, the term "if" can be interpreted as "when", "once", "in response to determining", or "in response to detecting" depending on the context. Similarly, the phrases "if determined" or "if [the described condition or event] is detected" can be interpreted as meaning "once determined", "in response to determining", "once [the described condition or event] is detected", or "in response to detecting [the described condition or event]" depending on the context.

[0027] In addition, in the description of the specification of the present application and the appended claims, the terms "first", "second", "third", etc. are only used for distinguishing descriptions and should not be construed as indicating or implying relative importance.

[0028] Reference to "an embodiment" or "some embodiments" or the like described in the specification of the present application means that a specific feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the present application. Thus, statements such as "in an embodiment", "in some embodiments", "in other some embodiments", "in still other embodiments", etc. that appear in different places in this specification are not necessarily all referring to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in another way. The terms "comprising", "including", "having", and their variants all mean "including but not limited to", unless otherwise specifically emphasized in another way.

[0029] With the continuous growth of the demand for wireless communication applications, the existing spectrum resources are becoming increasingly tense. At the same time, the growth of communication capacity also requires a wider working bandwidth, and the operating frequency of microwave radio frequency circuits is continuously increasing from S / C / X / K. Terahertz technology in higher frequency bands is also becoming increasingly mature. Corresponding chips, such as low-noise amplifier chips, power amplifier chips, detectors chips, frequency multipliers chips, mixers chips, etc., have entered the stage of engineering batch applications, but the corresponding packaging still stays in the stage of using traditional micro-assembly processes to assemble chips and microstrip lines in a metal casing, with poor assembly consistency, unable to achieve airtightness, and difficult to meet the usage requirements in high-reliability environments.

[0030] In the terahertz high-frequency band around 100 GHz, the signal transmission loss is very obvious. Terahertz radio frequency modules usually use metal packages integrated with metal waveguides for packaging. Functional chips are mounted in partitions inside, and a microstrip-waveguide conversion module for chip and antenna coupling, together with a matching metal waveguide, constitutes a complete TR module. Considering the machinability and producibility of metal packages in machining and assembly, it is difficult to achieve airtight chip packaging, and the long-term reliability is not high.

[0031] Based on the above problems, this application provides a W-band radio frequency package and a preparation method. To make the purpose, technical solution, and advantages of this application clearer, the following will be described through specific embodiments with reference to the accompanying drawings.

[0032] Figure 1 The structural schematic diagram of the W-band radio frequency package provided by the application embodiment is shown. Refer to Figure 1 As shown above, the W-band radio frequency package may include a substrate 100, a conductor layer 200, a microstrip probe 300, and a chip 400. The substrate 100 is provided with through holes and blind slots penetrating both sides of the substrate; the conductor layer 200 is formed on both sides of the substrate 100, and the conductor layers 200 on both sides of the substrate 100 are interconnected through the through holes; the microstrip probe 300 is semi-suspended on the conductor layer 200; the chip 400 is disposed on the conductor layer 200, bonded to the microstrip probe 300 and isolated from each other.

[0033] Among them, the substrate 100 includes a top surface substrate 101 and a bottom surface substrate 102 arranged opposite to each other; the top surface substrate 101 and the bottom surface substrate 102 are buckled to form an airtight package; the microstrip probe 300 is disposed on the conductor layer 200 generated by the bottom surface substrate 102, and cooperates with the package formed by the substrate 100 to form a reflection cavity structure.

[0034] Optionally, the material of the substrate 100 is ceramic dielectric; the through holes penetrating both sides of the substrate 100 are filled with metal conductors, and the conductor layers 200 on both sides of the substrate 100 are interconnected through the metal conductors.

[0035] Exemplarily, refer to Figure 1, a blind groove 1011 is formed on the upper surface of the top surface substrate 101, a top surface antenna post 1012 is provided, a bottom surface welding pad 1013 and a coupling cavity structure 1014 are provided on the lower surface, and conductor layers 200 are formed on both the upper and lower surfaces. Among them, the height of the coupling cavity structure 1014 is less than the height of the bottom surface welding pad 1013, and the difference between the height of the coupling cavity structure 1014 and the height of the bottom surface welding pad 1013 is greater than the maximum height of the microstrip probe 300.

[0036] On the upper surface of the bottom surface substrate 102, a blind groove 1021 is formed, a conductor layer 200 is formed, a microstrip probe 300 is semi-suspended, a chip 400 is provided, and a conductor layer 200 is formed on the lower surface. Among them, the blind groove 1021 is covered with a conductor layer lower than its own depth, the microstrip probe 300 is semi-suspended on the conductor layer 200 formed on the upper surface of the bottom surface substrate 102, and is connected to the chip 400 provided on the conductor layer 200 formed on the upper surface through a bonding wire. The chip 400 is isolated from the microstrip probe 300 and is connected to the conductor layer 200 formed on the upper surface through a bonding wire.

[0037] Among them, the suspended part of the microstrip probe 300 is located above the blind groove 1021 of the bottom surface substrate 102, and the non-suspended part of the microstrip probe 300 is mounted on the bottom surface substrate 102; the chip 400 is mounted on the bottom surface substrate 102, one end is connected to the bottom surface substrate 102 through a bonding wire, the other end of the chip is isolated from the microstrip probe 300, and is connected through a bonding wire.

[0038] The following combines Figure 1 to describe in detail the manufacturing method of the W-band radio frequency package of the present application.

[0039] Figure 2 is a schematic flowchart of the manufacturing method of the W-band radio frequency package provided by an embodiment of the present application. Referring to Figure 2 , the details of the manufacturing method of the W-band radio frequency package are as follows:

[0040] In step 101, conductor layers are formed on both sides of the substrate. Through holes and blind grooves penetrating both sides of the substrate are formed on the substrate, and the conductor layers on both sides of the substrate are interconnected through the through holes. Among them, the substrate includes a top surface substrate and a bottom surface substrate arranged opposite to each other.

[0041] Exemplarily, forming conductor layers on both sides of the substrate includes: opening through holes in the substrate, sputtering metal seed layers on both sides of the substrate, and connecting the metal seed layers on both sides of the substrate through the through holes; coating a photoresist layer on the metal seed layer, and obtaining a surface pattern through photolithography; according to the first preset pattern area, performing electroplating and planarization processing on the substrate, and performing local thickening processing on the top surface substrate; removing the photoresist layer, performing photolithography again to obtain an etching pattern, and removing the metal seed layer in the non-second preset pattern area through chemical etching; opening a blind groove on one side of the substrate and cleaning the blind groove.

[0042] Specifically, referring to Figure 3 , the processing of the top substrate includes:

[0043] 1. Drilling: The antenna support material can be a low-loss and high-strength dielectric material such as glass, quartz, or sapphire. In actual production, large-size substrates with multiple units arranged in a row are used to improve efficiency. Only a single unit is selected as a representative in the schematic diagram. Picosecond cold laser processing is used for drilling. The diameter of the holes is 70 - 125 μm, and the value refers to the substrate thickness (thickness 0.15 - 2 mm), ensuring that the ratio of the substrate thickness to the through-hole diameter is < 10:1. The typical value of the hole diameter is 100 μm. The hole walls of the laser-drilled holes are smooth and have high perpendicularity, and the difference in hole diameters between the upper and lower surfaces is less than 5%.

[0044] 2. Sputtering the metal seed layer: After the substrate is cleaned, a layer of metal is deposited on the surface to provide a seed layer for subsequent electrodeposition. The typical structure of the metallization layer of the seed layer is Ti / Cu, and the total thickness is 50 nm - 5000 nm. Other metallization structures and thicknesses are also acceptable. The deposition method of the seed layer can be selected as physical vapor deposition (PVD), chemical vapor deposition (CVD), or other methods.

[0045] 3. Lithography: The photoresist layer is coated on the substrate surface by spin coating or laminating and hot pressing, and then the Figure 3 shown pattern is obtained through standard lithography processes such as exposure and development for subsequent fabrication of the outer conductor structure. The photoresist can be a high-viscosity photoresist, such as the THB series negative photoresist of JSR Corporation; or it can be a high-resolution photosensitive dry film, such as the ST series dry film of Dupont Corporation. The thickness of the photoresist layer is greater than 30, the line resolution is less than 10 microns, and the sidewalls are steep;

[0046] 4. Electroplating and planarization: The surface pattern defined by the photoresist is thickened to 30 - 200 μm by electrochemically depositing method, and at the same time, the vias with metal bottoming are filled solid until they protrude from the surface without voids inside. The electrochemically deposited material is selected as copper, preferably a Cu electrolyte with deep hole filling. Pulse plating and DC plating are used in combination during electroplating to improve efficiency as much as possible under the condition that there are no voids in the copper deposition in the through-holes. Then, planarization technology is used to thin the thickness of the plating layer and perform surface treatment, which can obtain a metal layer with higher precision thickness and lower surface roughness, and obtain the metal layer on the substrate surface.

[0047] 5. Increasing the first height: Lithography, electroplating, grinding, and polishing are performed to locally thicken the surface pattern. Functionally, the preparation of the bottom welding pads is completed.

[0048] 6. Increasing the second height: Lithography, electroplating, grinding, and polishing are performed to locally thicken the surface pattern. Functionally, the preparation of the top antenna metal posts is completed.

[0049] 7. Adopt the standard film removal process to remove the photoresist material and expose the seed layer. Perform lithography again to define the etching pattern. Use chemical etching to remove the seed layer in the non-pattern-defined area and expose the substrate support layer. Use electroless plating to protect the surface metal pattern area and improve environmental tolerance.

[0050] 8. Grooving: Use picosecond laser cold processing to create blind grooves at the corresponding positions. The laser scans and ablates layer by layer from the surface to the inside to process blind grooves with specified dimensions and depths and then clean them.

[0051] Among them, local thickening treatment is performed on the top surface substrate, including: according to the surface pattern, locally thicken the top surface substrate to obtain a first preset pattern, according to the surface pattern, locally thicken the top surface substrate to obtain a first preset pattern, and complete the preparation of the bottom welding pads based on the first preset pattern; based on the first preset pattern, locally thicken the top surface substrate to obtain a second preset pattern, and complete the preparation of the top surface antenna posts based on the second preset pattern.

[0052] See Figure 4 , the processing of the bottom surface substrate includes:

[0053] 1. Drilling / grooving: Use laser-induced etching to process through holes in the areas of the lower substrate that need to be grounded and interconnected. The diameter of the holes is 30 - 125 μm, and the value refers to the substrate thickness, ensuring that the ratio of the substrate thickness to the through-hole diameter < 10:1; then use picosecond laser cold processing to create blind grooves at the corresponding positions, and the laser scans and ablates layer by layer from the surface to the inside.

[0054] 2. The following process is the standard process for processing airtight packages before, including: cleaning, sputtering, lithography, electroplating, and CMP polishing, completing the surface metal layer, then stripping the film, etching, solder resist, and surface protection.

[0055] Optionally, the dielectric of the metal-ceramic airtight package selects low-dielectric, high-strength, and high-thermal-conductivity ceramic materials such as quartz, glass, and aluminum nitride. In the dielectric area at the external coupling output end of the reflection cavity of the microstrip-to-waveguide, use the method of local processing of blind grooves to reduce the dielectric thickness to 0.07 - 0.2 mm and optimize the grooving dimensions within the range of 0.5*0.5 - 3*3 mm. A wideband and low-loss dielectric waveguide transmission structure can be achieved. Use an ultrashort pulse laser to etch the porcelain body and prepare metal patterns by semiconductor processes, with a processing accuracy reaching the μm level.

[0056] In step 102, a microstrip probe is set on the bottom surface substrate, and the microstrip probe is semi-suspended on the conductor layer generated by the bottom surface substrate.

[0057] Exemplarily, a microstrip probe is disposed on the bottom substrate, including: the microstrip probe is semi-suspended on the conductor layer, the suspended portion of the microstrip probe is located above the blind via of the bottom substrate, and the non-suspended portion of the microstrip probe is mounted on the bottom substrate.

[0058] Optionally, a ceramic substrate is locally processed by an ultra-short pulse laser to form a blind via with a fixed depth and then surface metallized to serve as the back reflection area of the microstrip probe.

[0059] In step 103, a chip is disposed on the bottom substrate, and the chip and the microstrip probe are connected by bonding wires and isolated from each other;

[0060] Exemplarily, a chip is disposed on the bottom substrate, including: the chip is mounted on the bottom substrate, one end is connected to the bottom substrate by a bonding wire, the other end of the chip is isolated from the microstrip probe and connected by a bonding wire.

[0061] In step 104, the top substrate and the bottom substrate are combined to obtain a package shell.

[0062] Exemplarily, combining the top substrate and the bottom substrate includes: dividing the top substrate and the bottom substrate by laser scribing; disposing a chip and a microstrip probe on the mounting surface of the bottom substrate; and forming a package shell cavity by welding the top substrate and the bottom substrate.

[0063] Specifically, the top substrate and the bottom substrate are respectively divided into independent units by laser scribing; by assembly: mounting a chip and a microstrip probe on the mounting surface and bonding and interconnecting them; forming a cavity: the bottom ground area of the top substrate and the frame area of the bottom substrate are welded to form the cavity of the package shell; by testing: screening the performance of the package shell and conducting environmental tests.

[0064] An integrated electroplated metal wall with outer edge ground shielding is buckled with a central non-metallized dielectric waveguide region and welded and interconnected to form a complete reflection cavity. Among them, the surface of the metal via hole is sealed by thick copper (>10μm) electroplating: when preparing the conductor layer on the substrate surface, an electroplated copper layer with a thickness greater than 10μm can achieve airtightness; the bottom substrate and the top substrate are diffusion welded through symmetric metal side walls to ensure airtightness at the interface.

[0065] The above-mentioned W-band radio frequency package structure and manufacturing method form a highly reliable hermetic package by buckling a ceramic base plate and a ceramic cover plate with local metallization respectively. Among them, blind grooves are respectively processed on the base plate and the cover plate of the ceramic package and are locally metallized. Cooperating with the low-loss microstrip probes mounted semi-suspended in the package, a reflection cavity structure is formed. The chips mounted in the package complete signal amplification, mixing and other processing and are transmitted through the microstrip. The radio frequency signal transmitted through the microstrip passes through the microstrip probe suspended in the coupling cavity with a large-area metallized inner wall, and the signal transmitted through the microstrip is transmitted out of the hermetic package through the low-loss and ultra-thin ceramic medium in a specific non-metallized area of the coupling cavity. Then, it is matched with the metal antenna open radiation unit on the outside to transmit the high-frequency signal. Receiving is the reverse process. By introducing a metal-ceramic hermetic package integrating a reflection cavity, a low-loss dielectric waveguide and a waveguide antenna radiation unit, the hermetic package of the W-band high-frequency TR module is realized, providing support for the application of high-frequency and highly reliable radio frequency microwave circuits.

[0066] It should be understood that the sequence numbers of the steps in the above embodiments do not mean the order of execution. The order of execution of each process should be determined by its function and internal logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.

[0067] In the above embodiments, the descriptions of the various embodiments have their own emphases. For the parts not described or recorded in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.

[0068] Those of ordinary skill in the art can realize that the units and algorithm steps of the examples described in combination with the embodiments disclosed herein can be implemented by electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are executed in hardware or software depends on the specific application and design constraints of the technical solution. Professional technicians can use different methods to implement the described functions for each specific application, but such implementation should not be considered to exceed the scope of the present application.

[0069] The above-described embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A W-band radio frequency package structure, characterized in that, it includes: a substrate, which is provided with through holes and blind slots penetrating both sides of the substrate. Among them, the substrate includes a partially metallized top substrate and a partially metallized bottom substrate arranged oppositely; the material of the substrate is ceramic dielectric; a conductor layer, formed on both sides of the substrate, and the conductor layers on both sides of the substrate are interconnected through the through holes; a microstrip probe, semi-suspended on the conductor layer; a chip, arranged on the conductor layer, bonded and connected to the microstrip probe and isolated from each other; the top substrate and the bottom substrate are buckled to form a hermetically sealed package; the microstrip probe is arranged on the conductor layer generated by the bottom substrate, and cooperates with the package formed by the substrate to form a reflection cavity structure; the radio frequency signal of the microstrip probe is transmitted through the non-metallized area of the ceramic substrate.

2. The W-band radio frequency package structure according to claim 1, characterized in that, the through holes are filled with metal conductors, and the conductor layers on both sides of the substrate are interconnected through the metal conductors.

3. A method for manufacturing a W-band radio frequency package, characterized in that, it is used to manufacture the W-band radio frequency package structure according to claim 1; the method includes: forming conductor layers on both sides of the substrate, the substrate is provided with through holes and blind slots penetrating both sides of the substrate, and the conductor layers on both sides of the substrate are interconnected through the through holes. Among them, the substrate is divided into a top substrate and a bottom substrate; arranging a microstrip probe on the bottom substrate, and the microstrip probe is semi-suspended on the conductor layer generated by the bottom substrate; arranging a chip on the bottom substrate, and the chip is connected to the microstrip probe through bonding wires and isolated from each other; combining the top substrate and the bottom substrate to obtain a package.

4. The method for manufacturing a W-band radio frequency package according to claim 3, characterized in that, the forming conductor layers on both sides of the substrate includes: opening through holes in the substrate, sputtering metal seed layers on both sides of the substrate, and the metal seed layers on both sides of the substrate are connected through the through holes; coating a photoresist layer on the metal seed layer, and obtaining a surface pattern through photolithography; performing electroplating and planarization processing on the substrate according to the first preset pattern area, and performing local thickening processing on the top substrate; removing the photoresist layer, performing photolithography again to obtain an etching pattern, and removing the metal seed layer in the non-second preset pattern area through chemical etching; opening a blind slot on one side of the substrate and cleaning the blind slot.

5. The method for manufacturing a W-band radio frequency package according to claim 4, characterized in that, the local thickening processing required for the top substrate includes: locally thickening the top substrate according to the surface pattern to obtain the first preset pattern, and preparing a bottom welding pad on the basis of the first preset pattern; locally thickening the top substrate based on the first preset pattern to obtain the second preset pattern, and preparing a top antenna post on the basis of the second preset pattern.

6. The method for manufacturing a W-band radio frequency package according to claim 3, characterized in that, The step of disposing a microstrip probe on the bottom substrate includes: semi-suspending the microstrip probe on the conductor layer, with the suspended portion of the microstrip probe located above the blind via of the bottom substrate, and the non-suspended portion of the microstrip probe being mounted on the bottom substrate; The step of disposing a chip on the bottom substrate includes: mounting the chip on the bottom substrate, with one end connected to the bottom substrate by a bonding wire, and the other end of the chip being isolated from and connected to the microstrip probe by a bonding wire.

7. The method for fabricating a W-band radio frequency package according to claim 3, characterized in that, The step of combining the top substrate and the bottom substrate includes: dividing the top substrate and the bottom substrate by laser scribing; disposing the chip and the microstrip probe on the mounting surface of the bottom substrate; forming a package cavity by welding the top substrate and the bottom substrate.

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