Semiconductor device and method of manufacturing semiconductor device
By employing an alternating stacked insulating and conductive layer structure in 3D semiconductor memory devices to form capacitor plugs and multilayer layers, the problem of reduced reliability caused by the increase of stacked memory cells is solved, and the capacitor capacity and reliability are improved.
CN114628359BActive Publication Date: 2026-07-07SK HYNIX INC
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SK HYNIX INC
- Filing Date
- 2021-07-27
- Publication Date
- 2026-07-07
AI Technical Summary
Technical Problem
As the number of stacked memory cells in 3D semiconductor memory devices increases, operational reliability may decrease.
Method used
An alternating layered insulating and conductive layer structure is used to form a capacitor plug and a multilayer capacitor. An initial laminate is formed by alternating layers of insulating and sacrificial layers, and a memory layer and a capacitor insulating layer are formed in the via, thereby improving the capacitance and reliability of the capacitor.
Benefits of technology
The increased capacitance improves the reliability of semiconductor devices, and the parallel connection of capacitors enhances operational stability.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN114628359B_ABST
Abstract
The present application relates to semiconductor devices and methods of manufacturing semiconductor devices. What can be provided herein is a semiconductor device. The semiconductor device can include a first stack including first stacked insulating layers and first stacked conductive layers alternately stacked, a capacitor plug passing through the first stack, and a capacitor multilayer layer configured to surround the capacitor plug. The capacitor plug can include a metal.
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