A wafer cleaning and etching device based on a thermal energy flow field

Abstract

The present invention provides a wafer cleaning and etching device based on a thermal energy flow field, comprising: a placement table fixed to a bottom plate through a rotating shaft; a wafer disposed on the placement table; a first spraying module that sprays a cleaning solution onto the surface of the wafer through a first nozzle; a second spraying module that sprays an atomized solution onto the surface of the wafer through a second nozzle to form a thermal energy flow field on the surface of the wafer; a third spraying module that sprays an etching solution onto the surface of the wafer through a third nozzle; and a control module for controlling the rotation of the rotating shaft, controlling the rotation of a rotating member to drive the first nozzle to move above the wafer and controlling the first nozzle to spray the cleaning solution, controlling the second nozzle to spray the atomized solution, and controlling the third nozzle to spray the etching solution. The beneficial effect is that the device forms a thermal energy flow field on the wafer surface through the second nozzle, and under the action of the thermal energy flow field, the etching solution on the wafer surface can be stabilized at a preset temperature, solving the problem of temperature stability.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer cleaning and etching, and particularly to a wafer cleaning and etching device based on a thermal energy flow field. Background Art

[0002] In a specific high-temperature chemical wet process, a single-piece cleaning and etching device is generally used for cleaning and etching. In the high-temperature chemical wet process, it is necessary to always maintain the relative stability of the wafer surface temperature to ensure the maintenance of the characteristics of the wafer surface treatment.

[0003] However, the current cleaning and etching device cannot take into account the flow field characteristics of the wafer surface, and cannot maintain a good environment and temperature of the flow field, resulting in frequent problems with the temperature stability during the etching of the wafer surface. Summary of the Invention

[0004] In view of the problems existing in the prior art, the present invention provides a wafer cleaning and etching device based on a thermal energy flow field, including:

[0005] A placement table, which is fixed to a bottom plate through a rotating shaft;

[0006] A wafer, arranged on the placement table;

[0007] A first spraying module, the first spraying module includes a first fixing member and a rotating member, and one end of the rotating member is provided with a first nozzle, and a cleaning solution is sprayed onto the surface of the wafer through the first nozzle to clean the wafer;

[0008] A second spraying module, the second spraying module includes a second fixing member and a third fixing member, and one end of the third fixing member facing the wafer is provided with a second nozzle, and an atomized solution is sprayed onto the surface of the wafer through the second nozzle to form a thermal energy flow field on the surface of the wafer;

[0009] A third spraying module, the third spraying module includes a fourth fixing member and a fifth fixing member, and one side of the fifth fixing member facing the wafer is provided with a third nozzle, and an etching solution is sprayed onto the surface of the wafer through the third nozzle to etch the wafer;

[0010] A control module, respectively connected to the rotating shaft, the rotating member, the first nozzle, the second nozzle and the third nozzle, for controlling the rotation of the rotating shaft, controlling the rotation of the rotating member to drive the first nozzle to move above the wafer and controlling the first nozzle to spray the cleaning solution, controlling the second nozzle to spray the atomized solution, and controlling the third nozzle to spray the etching solution.

[0011] Preferably, the first nozzle is a conical nozzle.

[0012] Preferably, the second nozzle is a triangular pyramidal nozzle.

[0013] Preferably, the third nozzle is a cylindrical nozzle.

[0014] Preferably, a liquid leakage window is provided on the bottom plate for transporting the cleaning solution, the atomized solution, and the etching solution splashed on the placement table to an external recovery device.

[0015] Preferably, at least one mounting opening is provided on the bottom plate.

[0016] Preferably, the temperature of the atomized solution is from 10 degrees Celsius to 99.9 degrees Celsius.

[0017] Preferably, the particle size of the atomized solution is from 1 nanometer to 100,000 nanometers.

[0018] The above technical solution has the following advantages or beneficial effects: The device cleans the surface of the wafer through the first nozzle, forms a heat energy flow field on the surface of the wafer through the second nozzle, and simultaneously etches the wafer through the third nozzle. Under the action of the heat energy flow field, the etching solution on the surface of the wafer can be stabilized at a preset temperature, solving the problem of temperature stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 For a preferred embodiment of the present invention, it is the structural schematic diagram of the device;

[0020] Figure 2 For a preferred embodiment of the present invention, it is the structural schematic diagram of the placement table;

[0021] Figure 3 For a preferred embodiment of the present invention, it is the structural schematic diagram of the control module;

[0022] Figure 4 For a preferred embodiment of the present invention, it is the structural schematic diagram of the partial enlargement of the first nozzle, the second nozzle, and the third nozzle. DETAILED DESCRIPTION OF THE INVENTION

[0023] The present invention will be described in detail below with reference to the drawings and specific embodiments. The present invention is not limited to this embodiment, and other embodiments can also fall within the scope of the present invention as long as they conform to the gist of the present invention.

[0024] In a preferred embodiment of the present invention, based on the above problems existing in the prior art, a wafer cleaning and etching device based on a heat energy flow field is now provided, as Figures 1-3 shown, including:

[0025] A placement table, which is fixed to a bottom plate 12 through a rotating shaft 11;

[0026] A wafer 2, which is arranged on the placement table;

[0027] A first spraying module 3, the first spraying module 3 includes a first fixing member 31 and a rotating member 32, and a first nozzle 33 is provided at one end of the rotating member 32, and a cleaning solution is sprayed onto the surface of the wafer 2 through the first nozzle 33 to clean the wafer 2;

[0028] A second spraying module 4, the second spraying module 4 includes a second fixing member 41 and a third fixing member 42, and a second nozzle 43 is provided at one end of the third fixing member 42 facing the wafer 2, and an atomized solution is sprayed onto the surface of the wafer 2 through the second nozzle 43 to form a heat energy flow field on the surface of the wafer 2;

[0029] A third spraying module 5, the third spraying module 5 includes a fourth fixing member 51 and a fifth fixing member 52, and a third nozzle 53 is provided on one side of the fifth fixing member 52 facing the wafer 2, and an etching solution is sprayed onto the surface of the wafer 2 through the third nozzle 53 to etch the wafer 2;

[0030] A control module 6, which is respectively connected to the rotating shaft 11, the rotating member 32, the first nozzle 33, the second nozzle 43 and the third nozzle 53, and is used to control the rotation of the rotating shaft 11, control the rotation of the rotating member 32 to drive the first nozzle 33 to move above the wafer 2 and control the first nozzle 33 to spray the cleaning solution, control the second nozzle 43 to spray the atomized solution, and control the third nozzle 53 to spray the etching solution.

[0031] Specifically, in this embodiment, in actual operation, the control module 6 first controls the rotating member 32 to move the first nozzle 33 above the wafer 2 and controls the first nozzle 33 to spray the cleaning solution to wet the surface of the wafer 2. After the spraying is completed, the control module 6 controls the rotating member 32 to move the first nozzle 33 to the initial position, and then controls the second nozzle 43 and the third nozzle 53 to spray the atomized solution and the etching solution onto the surface of the wafer 2 at the same time. The etching solution and the atomized solution come into contact with each other on the surface of the wafer 2 to increase the temperature of the etching solution.

[0032] Preferably, the atomized solution is formed by ultrasonic vibration.

[0033] Preferably, the atomized solution is deionized water or hydrogen peroxide.

[0034] In a preferred embodiment of the present invention, as Figure 4 shown, the first nozzle 33 is a conical nozzle.

[0035] Specifically, in this embodiment, in order not to affect the normal use of the third nozzle 53, the height of the first nozzle 33 relative to the bottom plate 12 is set between the third nozzle 53 and the wafer 2, and the first nozzle 33 is a conical nozzle, so that the spraying range of the cleaning solution can cover the upper surface of the wafer 2 as much as possible.

[0036] In a preferred embodiment of the present invention, as Figure 4 shown, the second nozzle 43 is a triangular pyramid nozzle.

[0037] Specifically, in this embodiment, since the second nozzle 43 is disposed on the side of the wafer 2, the second nozzle 43 is selected as a triangular pyramid shape, so that the spraying range of the atomized solution can cover the upper surface of the wafer 2.

[0038] In a preferred embodiment of the present invention, as Figure 4 shown, the third nozzle 53 is a cylindrical nozzle.

[0039] Specifically, in this embodiment, considering that the height of the third nozzle 53 relative to the bottom plate 12 is the highest, the third nozzle 53 is a cylindrical nozzle, so that the spraying range of the etching solution can cover the upper surface of the wafer 2.

[0040] In a preferred embodiment of the present invention, a liquid leakage window 7 is provided on the bottom plate 12 for transporting the cleaning solution, atomized solution, and etching solution splashed on the placement table to an external recovery device.

[0041] In a preferred embodiment of the present invention, at least one mounting opening 8 is provided on the bottom plate 12.

[0042] Specifically, in this embodiment, nozzles can be added through the mounting opening 8.

[0043] In a preferred embodiment of the present invention, the temperature of the atomized solution is 10 degrees Celsius to 99.9 degrees Celsius.

[0044] In a preferred embodiment of the present invention, the particle size of the atomized solution is 1 nanometer to 100,000 nanometers.

[0045] Embodiment 1:

[0046] The third nozzle 53 can adopt a composite output nozzle, presenting a double-sleeve structure. The output pipelines corresponding to hydrogen peroxide and sulfuric acid are placed therein. First, they enter the inner tube sleeve for mixing hydrogen peroxide and sulfuric acid. After sufficient mixing, under the action of liquid extrusion, they are introduced into the outer tube sleeve, and under the action of circulating flow, the function of squeezing and breaking bubbles is generated, reducing the problem that a large amount of bubbles will be generated in the hydrogen peroxide and sulfuric acid mixed solution, and then output from the nozzle.

[0047] Preferably, hydrogen peroxide and sulfuric acid are mixed after entering the inner tube sleeve. Due to the pushing action of the liquid, the bubbles will move upward because of their low specific gravity. After being pushed by the liquid, the bubbles move to the open area above. While being pushed by the liquid, the mixed solution is exported into the outer tube sleeve by the reflux action of the inner tube sleeve.

[0048] The above are only the preferred embodiments of the present invention, and do not limit the implementation manners and protection scope of the present invention. For those skilled in the art, it should be realized that all the equivalent replacements and obvious changes made by using the content of this specification and the drawings should be included in the protection scope of the present invention.

Claims

1. A wafer cleaning and etching device based on a thermal energy flow field, characterized in that, Including: A placement table, which is fixed to a bottom plate through a rotating shaft; A wafer, arranged on the placement table; A first spraying module, the first spraying module includes a first fixing member and a rotating member, and a first nozzle is provided at one end of the rotating member, and a cleaning solution is sprayed onto the surface of the wafer through the first nozzle to clean the wafer; A second spraying module, the second spraying module includes a second fixing member and a third fixing member, and a second nozzle is provided at one end of the third fixing member facing the wafer, and an atomized solution is sprayed onto the surface of the wafer through the second nozzle to form a heat energy flow field on the surface of the wafer; A third spraying module, the third spraying module includes a fourth fixing member and a fifth fixing member, and a third nozzle is provided on one side of the fifth fixing member facing the wafer, and an etching solution is sprayed onto the surface of the wafer through the third nozzle to etch the wafer; A control module, respectively connected to the rotating shaft, the rotating member, the first nozzle, the second nozzle and the third nozzle, for controlling the rotation of the rotating shaft, controlling the rotation of the rotating member to drive the first nozzle to move above the wafer and controlling the first nozzle to spray the cleaning solution, controlling the second nozzle to spray the atomized solution, and controlling the third nozzle to spray the etching solution.

2. The wafer cleaning and etching apparatus according to claim 1, wherein The first nozzle is a conical nozzle.

3. The wafer cleaning and etching device according to claim 1, wherein The second nozzle is a triangular conical nozzle.

4. The wafer cleaning and etching device according to claim 1, characterized in that, The third nozzle is a cylindrical nozzle.

5. The wafer cleaning and etching apparatus according to claim 1, wherein A liquid leakage window is provided on the bottom plate for transporting the cleaning solution, the atomized solution and the etching solution splashed out on the placement table to an external recovery device.

6. The wafer cleaning and etching apparatus according to claim 1, wherein, At least one installation opening is provided on the bottom plate.

7. The wafer cleaning and etching apparatus according to claim 1, wherein, The temperature of the atomized solution is 10 degrees Celsius to 99.9 degrees Celsius.

8. The wafer cleaning and etching apparatus according to claim 1, wherein The particle size of the atomized solution is 1 nanometer to 100,000 nanometers.

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