An ultrathin VC heat sink with epicycloid etched channels and its design method

Abstract

This invention relates to the field of precision etching technology, primarily targeting the cooling of medium- and high-temperature heat-generating electronic components. It provides an ultra-thin VC vapor chamber with epicycloid etching channels and its design method. At least two epicycloid etching channels are provided on the lower cover plate of the VC vapor chamber for coolant circulation and cooling. Each epicycloid etching channel includes a coolant outlet or coolant return inlet connected to an initial coolant reservoir, and a coolant outlet or coolant return inlet connected to an edge coolant reservoir. The initial coolant reservoir is located at the same position as the medium- and high-temperature zone of the electronic component, and the edge coolant reservoir is located on the outer periphery of the epicycloid etching channels. Based on the characteristics of the epicycloid being a brachistochrone curve and an isochronous curve, this invention shortens the coolant circulation time in the etching channels while increasing the coolant circulation frequency, achieving a rapid cooling effect.

Description

Technical Field

[0001] This invention relates to the field of heat dissipation technology for electronic components, and in particular to an ultrathin VC heat sink with epicycloid etched channels and its design method. Background Technology

[0002] With the advancement of 5G and the diversification and high performance of 5G mobile terminals such as tablets and smartphones, the performance of electronic components such as mobile phone CPUs, PCBs, and batteries is becoming increasingly powerful. However, the integration and assembly density are constantly increasing, leading to a sharp increase in their power consumption and heat generation. Therefore, there is a strong demand for rapid heat conduction and dissipation.

[0003] Temperature control range for electronic components such as CPUs, PCBs, and batteries in electronic products: Under normal circumstances, the temperature should be controlled to be no more than 30 degrees Celsius above the room temperature. Once the temperature exceeds the limit, it will affect the operating speed of the equipment, and in severe cases, the equipment will restart or crash. Long-term operation under excessive temperature conditions will seriously affect the service life of the equipment. At the same time, the user experience will be poor due to the equipment overheating.

[0004] Currently, vapor chambers (VCs) are widely used for heat dissipation and temperature control of electronic components such as CPUs, PCBs, and batteries. Due to their rapid heat dissipation characteristics, vapor chambers are mainly used in markets where CPUs or GPUs consume 80W to 100W or more. Vapor chambers are mostly customized products, suitable for electronic products that require small size or rapid heat dissipation. A VC vapor chamber is a vacuum cavity with a microstructure on its inner wall, usually made of copper. The manufacturing process involves etching a large-area vacuum cavity onto two copper alloy sheets, then using resistance welding to fix a 200-250 mesh capillary copper mesh into the cavity. The copper sheets are then brazed together, and the process includes vacuuming, adding coolant, secondary degassing, and head spot welding to complete the manufacturing of the VC vapor chamber.

[0005] During operation, as heat is conducted from the heat source to the evaporation zone, the coolant in the chamber, heated in a low-vacuum environment, begins to vaporize. It absorbs heat and expands rapidly, quickly filling the entire chamber with the gaseous cooling medium. When the gaseous working fluid comes into contact with a cooler area, condensation occurs. This condensation releases the heat accumulated during evaporation. The condensed coolant then returns to the evaporation heat source through the capillary channels of the microstructure. This process repeats continuously within the chamber.

[0006] However, current methods for preparing VC heat exchangers cannot further reduce their volume, thickness, and weight, hindering miniaturization and weight reduction. Furthermore, using 200-250 mesh capillary copper mesh for the coolant reservoir involves complex processing steps and high costs. The temperature difference between the heating surfaces is 5-10 degrees Celsius, making further reduction difficult and failing to improve the user experience. Additionally, the presence of a large-area etched vacuum chamber can lead to insufficient strength, causing collapse, distortion, and low yield during vacuuming.

[0007] Therefore, it is necessary to provide a novel heat spreader structure to solve the above problems. Summary of the Invention

[0008] To address the technical challenges of miniaturization and weight reduction in existing VC heat sinks, this invention provides an ultra-thin VC heat sink with epicycloid etched channels and its design method. This invention targets the cooling of electronic components with small heat dissipation areas and medium-to-high temperatures. It primarily employs an epicycloid etched channel on the lower cover plate. Based on the location, shape, and operating temperature of the heat-generating electronic component, the invention designs the distribution of structures such as a coolant phase change outflow channel, a phase change reflux channel, an initial reservoir, and a balance temperature reservoir. This achieves a 25-30% increase in heat dissipation efficiency and maintains the temperature difference on the heat-generating surface within 1-3 degrees Celsius.

[0009] The technical means employed in this invention are as follows:

[0010] An ultrathin VC heat exchanger with epicycloid etched channels is characterized in that at least two epicycloid etched channels are provided on the lower cover plate of the VC heat exchanger for coolant circulation and cooling. The epicycloid etched channels include a coolant outlet or coolant return inlet communicating with an initial coolant reservoir, and a coolant outlet or coolant return inlet communicating with an edge coolant reservoir. The initial coolant reservoir is located at the same position as the medium-high temperature zone of the electronic components, and the edge coolant reservoir is located on the outer periphery of the epicycloid etched channels.

[0011] Furthermore, the arrangement of the epicycloid etching channels satisfies the cycloid design rules:

[0012] The ratio between the base circle radius r and the moving circle radius d / 2 is an integer. If the ratio is not an integer, adjust either the base circle radius r or the moving circle radius d / 2 until the ratio is an integer. The basic principle of adjustment is to keep the base circle radius unchanged and adjust the moving circle radius d / 2.

[0013] Among them, the radius r of the medium-high temperature zone of the electronic component is used as the radius of the base circle, that is, the radius of the initial liquid storage tank; the span between the medium-high temperature zone and the low temperature zone is used as the diameter d of the epicycloid moving circle.

[0014] Furthermore, at least two of the said epicycloid etching channels include at least one epicycloid coolant phase change outflow etching channel and one epicycloid coolant phase change backflow etching channel.

[0015] Furthermore, the epicycloid etching channel also includes several equilibrium temperature storage tanks.

[0016] Furthermore, the equilibrium temperature storage tank is located at the intersection of the epicycloid coolant phase change outflow etching channel and the epicycloid coolant phase change outflow etching channel or the epicycloid coolant phase change return etching channel.

[0017] Furthermore, the diameter of the equilibrium temperature storage tank is 1.5 to 2 times the width of the corresponding etched channel.

[0018] Furthermore, the edge coolant reservoir has at least a two-section structure, and the two sections are connected by a coolant circulation flow regulating port. The coolant circulation flow regulating port has a gradually narrowing / gradually opening structure along the coolant flow direction.

[0019] Furthermore, the epicycloid coolant undergoes a phase change and flows out of the etching channel into the edge coolant reservoir, gradually widening the etching channel; the epicycloid coolant undergoes a phase change and flows back into the etching channel, returning to the initial reservoir, further widening the etching channel.

[0020] Furthermore, the upper cover of the VC heat sink is etched with wavy channels to increase the heat dissipation area.

[0021] This invention also discloses a design method for an ultrathin VC heat sink with epicycloid etched channels, characterized by the following steps:

[0022] S1. The initial liquid storage tank is located on the lower cover of the VC heat exchanger, at the same location as the medium-high temperature zone of the electronic components.

[0023] S2. At least one epicycloid coolant phase change outflow etching channel and one epicycloid coolant phase change return etching channel are provided for coolant circulation and cooling. The arrangement of the etching channels meets the cycloid design rules.

[0024] The ratio between the base circle radius r and the moving circle radius d / 2 is an integer.

[0025] If the ratio is not an integer, adjust the base circle radius r or the moving circle radius d / 2 until the ratio is an integer;

[0026] Among them, the radius r of the medium-high temperature zone of the electronic component is used as the radius of the base circle, that is, the radius of the initial liquid storage tank; the span between the medium-high temperature zone and the low temperature zone is used as the diameter d of the epicycloid moving circle.

[0027] S3. The epicycloid coolant phase-change flows out of the etching channel and into the edge coolant storage tank, and the etching channel gradually widens; the epicycloid coolant phase-change flows back into the etching channel and back into the initial storage tank, and the etching channel gradually widens.

[0028] S4. Set up a balanced temperature storage tank at the intersection of the epicycloid coolant phase change outflow etching channel and the epicycloid coolant phase change outflow etching channel or the epicycloid coolant phase change return etching channel.

[0029] S5. An edge coolant reservoir with at least two sections is provided on the outer periphery of the epicycloid etching channel for connection with the coolant outlet or coolant return inlet of the epicycloid etching channel.

[0030] S6. A coolant circulation flow regulating port is provided between the two sections of the edge coolant reservoir. The coolant circulation flow regulating port has a gradually narrowing / gradually opening structure along the coolant flow direction.

[0031] S7. The top cover plate of the VC heat exchanger is etched into a wavy shape and welded to the bottom cover plate of the VC heat exchanger.

[0032] Compared with the prior art, the present invention has the following advantages:

[0033] 1. Without using capillary copper mesh as a coolant reservoir, the design method of external cycloidal etching channels is adopted to further reduce the volume, thickness and weight of VC heat sink, so that VC heat sink can be developed towards miniaturization and lightweight.

[0034] 2. Based on the location, shape, and operating temperature of the heat-generating electronic components, design structures such as coolant phase change outflow etching channels, coolant phase change backflow etching channels, initial reservoir, equilibrium temperature reservoir, and edge coolant reservoir. Based on the characteristics of the epicycloid as a brachistochrone curve and isochronous curve, the circulation time of the coolant in the etching channels is shortened while the circulation frequency of the coolant is increased, achieving a rapid cooling effect.

[0035] 3. Improve heat dissipation efficiency by more than 30%, control the temperature difference of the heat-generating surface within 1 to 3 degrees Celsius, and reduce the total product thickness from 0.3 to 0.4 mm to ≤0.2 mm, effectively stabilizing the operating environment of heat dissipation components and improving operating efficiency.

[0036] 4. Avoids insufficient strength due to large-area etching of the vacuum cavity, resulting in collapse, twisting and deformation caused by vacuum suction, and low yield rate; at the same time, it reduces the complexity of the VC heat spreader processing steps and the problem of high cost.

[0037] Based on the above reasons, this invention can be widely applied in the field of precision etching. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0039] Figure 1 This is a schematic diagram of the structure of the ultrathin VC heat sink with epicycloid etched channels of the present invention.

[0040] Figure 2 This is a schematic diagram of the upper cover plate of the ultrathin VC heat sink plate with epicycloid etched channels of the present invention.

[0041] Figure 3 This is a schematic diagram of the temperature range for medium- and high-temperature heating electronic components.

[0042] Figure 4 This is a schematic diagram of the structure of the epicycloid coolant phase change flowing out of the etching channel in this invention.

[0043] Figure 5 This is a schematic diagram of the structure of the epicycloid coolant phase change reflux etching channel of the present invention.

[0044] Figure 6 This is a schematic diagram of the lower cover plate of the ultra-thin VC heat sink plate with epicycloid etching channels of the present invention, wherein two epicycloid coolant phase change outflow etching channels and one epicycloid coolant phase change backflow etching channel are provided.

[0045] Figure 7 This is a schematic diagram of the liquid storage tank on the edge of the lower cover plate of the ultrathin VC heat spreader plate with epicycloid etching channels of the present invention.

[0046] Figure 8 This is a schematic diagram of the lower cover plate (without a balanced temperature storage tank) of the ultrathin VC heat spreader plate with epicycloid etched channels of the present invention.

[0047] Figure 9 This is a schematic diagram of the lower cover plate of the ultra-thin VC heat sink plate with epicycloid etching channels of the present invention, wherein an epicycloid coolant phase change outflow etching channel and an epicycloid coolant phase change backflow etching channel are provided.

[0048] In the diagram: 1. Upper cover plate; 2. Lower cover plate; 3. Coolant filling port; 4. Exhaust port; 5. Welding surface; 6. Initial reservoir; 7. #1 epicycloid coolant phase change outflow etching channel; 8. #2 epicycloid coolant phase change outflow etching channel; 9. #3 epicycloid coolant phase change backflow etching channel; 10. Equilibrium temperature reservoir; 11. #2 edge coolant reservoir; 12. #1 edge coolant reservoir; 13. #1 coolant outlet; 14. #3 coolant outlet; 15. #2 coolant outlet; 16. #4 coolant outlet; 17. #1 coolant backflow inlet; 18. #2 coolant backflow inlet; 19. #2 coolant circulation flow regulating port; 20. Coolant flow direction; 21. Medium-high temperature zone; 22. Low temperature zone; 23. #1 coolant circulation flow regulating port. Detailed Implementation

[0049] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0050] like Figure 1 As shown, the present invention provides an ultra-thin VC heat exchanger with epicycloid etched channels. At least two epicycloid etched channels are provided on the lower cover plate 2 of the VC heat exchanger for coolant circulation and cooling. These include at least one epicycloid coolant phase change outflow etched channel and one epicycloid coolant phase change backflow etched channel. The epicycloid coolant phase change outflow etched channel allows coolant to flow into the edge coolant reservoir, and the etched channel gradually widens (e.g., ...). Figure 4 (As shown); the epicycloid coolant phase change reflux etching channel flows back to the initial storage tank 6, and the etching channel gradually widens (as shown). Figure 5 (As shown).

[0051] The epicycloid etching channel also includes several temperature-balanced liquid storage tanks 10.

[0052] The epicycloid etching channel includes a coolant outlet or coolant return inlet connected to the initial reservoir 6, and a coolant outlet or coolant return inlet connected to the edge coolant reservoir. The initial reservoir 6 is located at the same position as the medium-high temperature zone 21 of the electronic component, and the edge coolant reservoir is located on the outer periphery of the epicycloid etching channel. The edge coolant reservoir has at least a two-section structure, which is connected to the other two sections by a coolant circulation flow regulating port. The coolant circulation flow regulating port has a tapered / opening structure along the coolant flow direction.

[0053] like Figure 3 As shown, the arrangement of the epicycloid etching channels satisfies the cycloid design rules:

[0054] The ratio between the base circle radius r and the moving circle radius d / 2 is an integer.

[0055] If the ratio is not an integer, adjust the base circle radius r or the moving circle radius d / 2 until the ratio is an integer; if the ratio is not an integer, the epicycloid will not be able to close.

[0056] Among them, the radius r of the medium-high temperature zone 21 of the electronic components is used as the radius of the base circle, that is, the radius of the initial liquid storage tank 6; the span between the medium-high temperature zone 21 and the low temperature zone 22 is used as the diameter d of the epicycloid moving circle.

[0057] The cycloid is a brachistochronous curve, and the area under the cycloid is three times the area of ​​the moving circle. In the medium and high temperature range, the flow rate of the coolant changes with different temperatures. However, no matter how it changes, the coolant will exhibit the corresponding isochronous property under the corresponding temperature conditions, and the characteristic of the fastest movement speed between two points is that the coolant moves the fastest between two points.

[0058] like Figure 2 As shown, the upper cover plate 1 of the VC heat dissipation plate is etched with wavy grooves to increase the heat dissipation area, which enhances the heat dissipation effect while effectively reducing the weight.

[0059] Example 1

[0060] In this embodiment, to ensure rapid cooling and temperature difference control within the 1-3°C range in the entire cooling zone, the core cooling zone is located at the same position as the medium-high temperature zone of the electronic components, and the initial liquid storage tank 6 is set in this area.

[0061] An epicycloid etching channel is designed using a ratio of 5 between the base circle radius *r* and the moving circle radius *d / 2*. This is illustrated by illustrating the design with three epicycloid etching channels evenly distributed around the circumference of a circular initial reservoir 6: two epicycloid coolant phase change outflow etching channels and one epicycloid coolant phase change backflow etching channel. In practical designs, the number of etching channels can be adjusted according to requirements such as temperature control, temperature uniformity of the heating surface, and heat dissipation efficiency. Increasing the number of etching channels results in more precise temperature control, higher temperature uniformity of the heating surface, and a significant proportional increase in heat dissipation efficiency, making it suitable for use in the medium-to-high temperature range of electronic components.

[0062] like Figure 6As shown, the coolant is heated and vaporized in the initial storage tank 6, and flows through coolant outlets 1# (outlet 13) and 3# (outlet 14) into the 1# epicycloid coolant phase change outflow etching channel 7 and the 2# epicycloid coolant phase change outflow etching channel 8. It then flows through coolant outlet 15 into the 2# edge coolant storage tank 11 (outlet 15 is located on the 2# edge coolant storage tank 11), and through coolant outlet 16 into the 1# edge coolant storage tank 12. After cooling and liquefaction, it flows back through the 3# epicycloid coolant phase change backflow etching channel 9, and finally back into the initial storage tank 6. The three etching channels are evenly distributed at 120° intervals around the center of the initial storage tank 6, forming a unified cooling zone.

[0063] The coolant vaporizes upon heating and flows from the initial circular reservoir 6 through coolant outlets 1# and 3# into the 1# epicycloid coolant phase change outflow etching channel 7 and 2# epicycloid coolant phase change outflow etching channel 8. It then flows through coolant outlet 15 into the 2# edge coolant reservoir 11 and through coolant outlet 16 into the 1# edge coolant reservoir 12. The width of the etching channels gradually increases, with the widest point being 2 to 3 times the narrowest point. (See [reference]) Figure 4 The circular temperature-balancing liquid storage tank 10 is located at the intersection of the three etched channels. Its diameter is 1.5 to 2 times the width of the corresponding etched channel. It is a key structural form for further uniform and balanced heat dissipation of the heat dissipation surface.

[0064] The coolant liquefies and flows from the #1 edge coolant reservoir 12 through the #1 coolant return inlet 17 (located on the #1 edge coolant reservoir 12), through the #3 epicycloid coolant phase change return etching channel 9, and then through the #2 coolant return inlet 18 back to the circular initial reservoir 6. The etching channel gradually widens from the #1 coolant return inlet 17 to the #2 coolant return inlet 18, with the widest point of the etching channel being 2 to 3 times the narrowest point. See [reference needed]. Figure 5 The circular temperature-balancing liquid storage tank 10 is located at the intersection of the three etched channels. Its diameter is 1.5 to 2 times the width of the corresponding etched channel. It is a key structural form for further uniform and balanced heat dissipation of the heat dissipation surface.

[0065] like Figure 7As shown, a coolant circulation flow regulating port 23 is provided next to the coolant return inlet 17. This port increases the coolant pressure returning to the initial reservoir 6 while ensuring normal circulation of coolant in the edge coolant reservoir. The coolant circulation flow regulating port 23 gradually increases in size along the coolant flow direction 20 (in a gradually opening structure). A coolant circulation flow regulating port 19 is provided on the edge coolant reservoir 11 at the symmetrical position of the edge coolant reservoir 12 (the flow regulating port gradually decreases in size along the coolant flow direction 20 (in a gradually narrowing structure), serving as a relay pressurization function.

[0066] Example 2

[0067] Based on Example 1, such as Figure 8 The diagram shown is a structural schematic of an epicycloid etching channel without a balanced temperature storage tank. The cooling method of the coolant is the same as in Example 1.

[0068] Example 3

[0069] Based on Example 1, such as Figure 9 As shown, the structure adopts two epicycloid etching channels and no equilibrium temperature storage tank is set up. That is, one #1 epicycloid coolant phase change out etching channel 7 and one #3 epicycloid coolant phase change backflow etching channel 9. The cooling method of the coolant is the same as that of Example 1.

[0070] Regarding the processing of VC heat spreaders:

[0071] The VC heat spreader designed in this invention consists of only two components: an upper cover plate 1 and a lower cover plate 2. It eliminates the need for a 200-250 mesh capillary copper mesh, effectively reducing process complexity and product cost. The specific design method includes the following steps:

[0072] The upper half of the lower cover plate 2 is etched with an epicycloid coolant phase change outflow etching channel, an epicycloid coolant phase change backflow etching channel, an initial reservoir 6, an equilibrium temperature reservoir 10, an edge coolant reservoir, a coolant filling port 3, and an exhaust port 4. The upper half of the upper cover plate 1 is etched with a wave-shaped heat dissipation surface. The upper and lower cover plates are welded together using atomic diffusion welding. Vacuuming and coolant filling are performed. Secondary degassing is performed. The filling port and exhaust port are welded to complete the manufacturing of the VC heat spreader.

[0073] Both the upper cover plate 1 and the lower cover plate 2 of the VC heat spreader can be made of copper alloy material with a thickness of t = 0.08-0.1mm, reducing the total thickness of the VC heat spreader to 0.16-0.2mm, a reduction of 40%-60% from the original 0.3-0.4mm. The upper cover plate 1 of the VC heat spreader is etched into a wavy shape (e.g., Figure 2 As shown in the figure, while increasing the heat dissipation area and enhancing the heat dissipation effect, the weight is effectively reduced, resulting in an overall weight reduction of more than 30%.

[0074] This invention does not employ a large-area etching process for the vacuum cavity, thus avoiding the problems of insufficient strength of the lower cover plate, collapse, distortion, and low yield caused by vacuum suction.

[0075] Working principle of VC heat spreader:

[0076] The initial storage tank 6 is located in the medium-high temperature zone 21. The coolant vaporizes upon heating (pressure increases) and flows through coolant outlets 1# (outlet 13) and 3# (outlet 14) into the 1# epicycloid coolant phase change outflow etching channel 7 and 2# epicycloid coolant phase change outflow etching channel 8. It then flows through coolant outlet 2# (outlet 15) into the 2# edge coolant storage tank 11 and through coolant outlet 4# (outlet 16) into the 1# edge coolant storage tank 12. After liquefaction, it flows back through the 3# epicycloid coolant phase change backflow etching channel 9 and then back into the initial storage tank 6. The three etching channels are evenly distributed at 120° intervals around the initial storage tank 6, with the center as the reference point. In the first and second epicycloids, the coolant phase change flowed out of the etching channel and into the edge coolant reservoir, gradually widening the etching channel. In the third epicycloid, the coolant phase change flowed back into the etching channel 9 and back into the initial reservoir 6, gradually widening the etching channel.

[0077] The liquefied coolant in the edge coolant reservoir flows back to the initial reservoir 6 through the No. 3 epicycloid coolant phase change reflux etching channel 9. Next to the No. 1 coolant reflux inlet 17, there is a No. 1 coolant circulation flow regulating port 23, which increases the coolant pressure returning to the initial reservoir 6 while ensuring normal circulation of coolant in the edge coolant reservoir. The No. 1 coolant circulation flow regulating port gradually increases in the direction of coolant flow. Symmetrically located in the edge coolant reservoir is a No. 2 coolant circulation flow regulating port 19, whose flow rate gradually decreases in the direction of coolant flow, serving as a relay pressurization function.

[0078] The width of the coolant phase change outflow etching channel and the coolant phase change backflow etching channel between the initial coolant reservoir 6 and the edge coolant reservoir are designed according to the actual temperature control requirements of the electronic components.

[0079] A circular temperature-balancing reservoir 10 (optionally set) is located at the intersection of the three etching channels. Its diameter is 1.5 to 2 times the width of the corresponding etching channel. It is used to balance the temperature difference in local areas, and there are four possible configurations:

[0080] ① The vaporized coolant flows through the medium-high temperature zone (the temperature of the vaporized coolant is lower than that of the medium-high temperature zone), balances the temperature of the high temperature zone through heat conduction, "carries away" the heat from the medium-high temperature zone, raises the temperature, and then flows into the edge coolant reservoir.

[0081] ② The vaporized coolant flows through the low-temperature zone (the temperature of the vaporized coolant is higher than that of the medium-high temperature zone). The heat is carried away by the vaporized coolant as it flows through the low-temperature zone and then liquefies, thus lowering the temperature. It then flows into the edge coolant storage tank.

[0082] ③ The liquefied coolant flows through the medium-high temperature zone (the temperature of the liquefied coolant is lower than that of the medium-high temperature zone), and carries away the heat of the high temperature zone through the vaporization of the coolant, thus raising the temperature, and then flows into the edge coolant storage tank;

[0083] ④ The liquefied coolant flows through the low-temperature zone (the temperature of the liquefied coolant is higher than that of the medium and high-temperature zone), and balances the temperature of the low-temperature zone through heat conduction. The heat is "taken away", the temperature drops, and then it flows into the edge coolant reservoir.

[0084] The pressure difference between the vaporization of coolant in the initial reservoir 6 and the liquefaction of coolant in the edge reservoir, along with the pressure adjustment of the No. 1 coolant circulation flow regulating port 23 and the No. 2 coolant circulation flow regulating port 19, drives the coolant from the initial reservoir 6 in the medium-high temperature region to the edge reservoir through the etching channel. This process is due to the phase change outflow etching channel gradually widening and increasing in volume, while flowing from the medium-high temperature region to the low temperature region, with the pressure gradually decreasing. This ensures that the coolant flows from the high-pressure, high-temperature region to the low-pressure, low-temperature region. That is, the coolant vaporizes in the initial reservoir 6 in the medium-high temperature region 21 and flows out through the No. 1 coolant outlet 13 and the No. 3 coolant outlet 14.

[0085] At this time, a low-pressure zone is formed at the No. 2 coolant return inlet 18, and its pressure is less than that at the No. 1 coolant return inlet 17, ensuring that the coolant flows back from the edge reservoir 12 to the initial reservoir 6 through the No. 3 coolant phase change return etching channel 9.

[0086] To ensure the pressure required for rapid coolant circulation, a #1 coolant circulation flow regulating port 23 is designed next to the #1 coolant return inlet 17 to increase the initial pressure of the coolant returning to the initial reservoir 6. Simultaneously, a #2 coolant circulation flow regulating port 19 is designed to ensure normal and rapid coolant circulation in the edge coolant reservoir. The number of epicycloids, the diameter of the equilibrium temperature reservoir, the coolant circulation flow regulating port, and the width of the etching channels can be specifically designed according to the product's temperature control and surface temperature difference control requirements.

[0087] The above embodiments are merely preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. An ultrathin VC heat sink with epicycloid etched channels, characterized in that, At least two epicycloid etched channels are provided on the lower cover plate of the VC heat sink for coolant circulation and cooling. The epicycloid etched channels include a coolant outlet or coolant return inlet connected to the initial reservoir and a coolant outlet or coolant return inlet connected to the edge coolant reservoir. The initial reservoir is located at the same position as the medium-high temperature zone of the electronic components. The edge coolant reservoir is located on the outer periphery of the epicycloid etched channels. The edge coolant reservoir has at least a two-section structure, which is connected to the two sections by a coolant circulation flow regulating port. The coolant circulation flow regulating port has a gradually narrowing / gradually opening structure along the coolant flow direction. The arrangement of the epicycloid etching channels satisfies the cycloid design rules: The ratio between the base circle radius r and the moving circle radius d / 2 is an integer. If the ratio is not an integer, adjust the base circle radius r or the moving circle radius d / 2 until the ratio is an integer; Among them, the radius r of the medium-high temperature zone of the electronic component is used as the radius of the base circle, that is, the radius of the initial liquid storage tank; the span between the medium-high temperature zone and the low temperature zone is used as the diameter d of the epicycloid moving circle. The at least two epicycloid etching channels include at least one epicycloid coolant phase change outflow etching channel and one epicycloid coolant phase change backflow etching channel; the epicycloid coolant phase change outflow etching channel flows coolant into the edge coolant reservoir, and the etching channel gradually widens; the epicycloid coolant phase change backflow etching channel flows back to the initial reservoir, and the etching channel gradually widens.

2. The ultrathin VC heat spreader with epicycloid etched channels according to claim 1, characterized in that, The epicycloid etching channel also includes several temperature-balanced liquid storage tanks.

3. The ultrathin VC heat spreader with epicycloid etched channels according to claim 2, characterized in that, The equilibrium temperature storage tank is located at the intersection of the epicycloid coolant phase change outflow etching channel and the epicycloid coolant phase change outflow etching channel or the epicycloid coolant phase change return etching channel.

4. The ultrathin VC heat sink with epicycloid etched channels according to claim 3, characterized in that, The diameter of the balanced temperature storage tank is 1.5 to 2 times the width of the corresponding etched groove.

5. The ultrathin VC heat spreader with epicycloid etched channels according to claim 1, characterized in that, The top cover of the VC heat sink is etched with wavy channels to increase the heat dissipation area.

6. A design method for an ultrathin VC heat sink with epicycloid etched channels, characterized in that... Includes the following steps: S1. The initial liquid storage tank is located on the lower cover of the VC heat exchanger, at the same location as the medium-high temperature zone of the electronic components. S2. At least one epicycloid coolant phase change outflow etching channel and one epicycloid coolant phase change return etching channel are provided for coolant circulation and cooling. The arrangement of the etching channels meets the cycloid design rules. The ratio between the base circle radius r and the moving circle radius d / 2 is an integer. If the ratio is not an integer, adjust the base circle radius r or the moving circle radius d / 2 until the ratio is an integer; Among them, the radius r of the medium-high temperature zone of the electronic component is used as the radius of the base circle, that is, the radius of the initial liquid storage tank; the span between the medium-high temperature zone and the low temperature zone is used as the diameter d of the epicycloid moving circle. S3. The epicycloid coolant phase-change flows out of the etching channel and into the edge coolant storage tank, and the etching channel gradually widens; the epicycloid coolant phase-change flows back into the etching channel and back into the initial storage tank, and the etching channel gradually widens. S4. Set up a balanced temperature storage tank at the intersection of the epicycloid coolant phase change outflow etching channel and the epicycloid coolant phase change outflow etching channel or the epicycloid coolant phase change return etching channel. S5. An edge coolant reservoir with at least two sections is provided on the outer periphery of the epicycloid etching channel for connection with the coolant outlet or coolant return inlet of the epicycloid etching channel. S6. A coolant circulation flow regulating port is provided between the two sections of the edge coolant reservoir. The coolant circulation flow regulating port has a gradually narrowing / gradually opening structure along the coolant flow direction. S7. The top cover plate of the VC heat exchanger is etched into a wavy shape and welded to the bottom cover plate of the VC heat exchanger.

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