Processing method for parts of plasma processing device, parts and processing device

Abstract

The present invention discloses a processing method and plasma processing device for improving etching rate, the processing method comprises: placing parts in a vacuum reaction chamber; placing a silicon wafer treated with thermal oxidation in the vacuum reaction chamber; generating a high-density silicon film: introducing an organic etching gas into the vacuum reaction chamber; applying a radio frequency signal to the vacuum reaction chamber, the radio frequency signal excites the organic etching gas into plasma, the plasma bombards the silicon wafer, and generates a high-density silicon film covering the surface of the parts. The present invention adopts very low-cost processing gas and coating process, realizes uniform coating of parts that may be exposed to plasma in the etching chamber such as a gas shower head, isolates the direct contact between the Y2O3 coating or Al2O3 / SiC coating of the parts and the plasma, thereby minimizing micro-particle contamination, and stabilizing the reaction rate of the organic etching reaction, improving production uniformity, and reducing production costs.

Description

Technical Field

[0001] The present invention relates to the technical field of plasma etching, and in particular to a processing method for improving plasma etching rate and a plasma processing device. Background Art

[0002] The contamination of microparticles in the etching chamber is an important issue in chip production. Severe chamber contamination can cause short circuits and block etching of integrated circuits. Therefore, as the feature size continues to shrink, the control of the number and size of microparticles (PA) in the etching chamber is becoming more and more stringent. For example, in the 0.11-0.13μm era, the etching chamber can detect microparticles larger than 0.16μm to ensure the safety of the etched chip. However, when it comes to the 10nm technology node, the number of microparticles smaller than 0.045μm must be monitored.

[0003] There are two main sources of microparticles: on the one hand, carbon-containing byproducts produced during the etching process. For the etching of organic mask layer materials, the main gases are NH3, N2 / H2, etc. During the etching process, some carbon-nitrogen polymers will be deposited on the walls of the chamber, including the upper electrode and the area around the wafer. On the other hand, due to the presence of highly active free radicals and high-energy ions in the plasma, the chamber material, especially the upper electrode gas shower head (SH for short), will be modified. This modification will cause corrosion of the upper electrode Y2O3 material, thereby forming the source of PA. At the same time, this modification also reduces the life of the gas shower head, raising the COC (cost of consumables).

[0004] In order to reduce particle contamination, a film can be applied on the surface of the device in the reaction chamber. Although the coating isolates the direct contact between the plasma and the protective layer, its surface morphology has an unstable effect on the etching rate due to the adsorption of particles of the reaction gas. Summary of the invention

[0005] In order to solve the above technical problems, the present invention provides a method for improving the plasma etching rate.

[0006] The method comprises the following steps:

[0007] Placing the components in a vacuum reaction chamber;

[0008] Placing a silicon wafer that has undergone thermal oxidation treatment in the vacuum reaction chamber;

[0009] Introducing an organic etching gas into the vacuum reaction chamber;

[0010] A radio frequency signal is applied to the vacuum reaction chamber, and the radio frequency signal excites the organic etching gas into plasma. The particles generated by the plasma bombardment of the silicon wafer form a silicon film on the surface of the component.

[0011] Optionally, the thermal oxidation treatment comprises the following steps:

[0012] The silicon wafer is placed in a furnace tube with a temperature greater than 800° C., and H2 and O2 are introduced, wherein the flow ratio of H2 to O2 is 1:4-4:1.

[0013] Optionally, the flow ratio of H2 and O2 is 10:7-13:10.

[0014] Optionally, the organic etching gas includes H2, SiH4 and oxygen-containing gas.

[0015] Optionally, the oxygen-containing gas includes one or more of O2, CO and CO2.

[0016] Optionally, the temperature of the plasma is less than 130°C.

[0017] Optionally, the process conditions of the plasma are: pressure less than 150mT; RF power greater than 200W; RF frequency range 2-60MHZ.

[0018] Optionally, the radio frequency signal adopts a continuous mode or a pulse mode.

[0019] Optionally, the thickness of the silicon film is less than 30 nm.

[0020] Optionally, the components refer to components in contact with plasma in the vacuum reaction chamber, including at least one of the inner wall of the reaction chamber, a grounding ring, a moving ring, an electrostatic suction cup assembly, a covering ring, a focusing ring, an insulating ring, a plasma confinement device and a liner.

[0021] Optionally, the surface of the component is provided with a protective layer for preventing plasma corrosion.

[0022] Optionally, the protective layer is a Y2O3 coating or an Al2O3 / SiC coating.

[0023] Optionally, a silicon coating is provided on the protective layer to prevent the generation of pollutants.

[0024] Furthermore, the present invention also provides a component for use in a plasma processing environment, comprising a component body, a surface of the component body being provided with a protective layer for preventing plasma corrosion, the protective layer being a Y2O3 coating or an Al2O3 / SiC coating, and

[0025] A silicon film wrapped around the outer surface of the protective layer; the silicon film is formed by any of the above-mentioned processing methods.

[0026] Optionally, the components refer to components in contact with plasma in the vacuum reaction chamber, including at least one of the inner wall of the reaction chamber, a grounding ring, a moving ring, an electrostatic suction cup assembly, a covering ring, a focusing ring, an insulating ring, a plasma confinement device and a liner.

[0027] Optionally, the gas shower head comprises:

[0028] Gas sprinkler head body;

[0029] A protective layer for preventing plasma corrosion wrapped on the surface of the body, the protective layer being a Y2O3 coating or an Al2O3 / SiC coating, and

[0030] A silicon film wrapped around the outer surface of the protective layer; the silicon film is formed by any of the above-mentioned processing methods.

[0031] Furthermore, the present invention also provides a plasma processing device, which includes: a vacuum reaction chamber, and components located in the vacuum reaction chamber and in contact with plasma, and the components have the characteristics described above.

[0032] The advantages of the present invention are: the present invention provides a processing method for improving the plasma etching rate. Through special process steps, a high-density silicon film is formed on the surface of the parts such as the shower head containing the protective layer, which not only isolates the direct contact between the plasma and the parts in the vacuum chamber, minimizes the pollution of particles, and increases the service life of the parts, but also avoids the adsorption of atoms contained in the reaction gas on the surface of the shower head and other parts, and achieves a uniform and stable etching rate.

[0033] Improve production efficiency and reduce production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0035] Figure 1 A schematic diagram of the hydrogen-containing process rate for the prior art treatment method;

[0036] Figure 2 A schematic diagram of the carbon-containing process rate for the prior art treatment method;

[0037] Figure 3 It is a schematic diagram of the principle of the rate instability of the treatment method of the prior art;

[0038] Figure 4 A new component processing method provided in Example 1;

[0039] Figure 5 A new component processing method provided in Example 2;

[0040] Figure 6 A comparison chart of pollutants from hydrogen-containing processes using the new treatment method and the prior art treatment method;

[0041] Figure 7 A comparison chart of the rate of the new treatment method and the treatment method of the prior art for the hydrogen-containing process;

[0042] Figure 8 Line graphs of pollutants for new treatment methods against carbon-containing processes;

[0043] Fig. 9 A graph comparing the rates of the new treatment method and the prior art treatment method for carbon-containing processes;

[0044] Fig.10 It is a structural schematic diagram of a capacitively coupled plasma etching device after being processed by the processing method of the present invention;

[0045] Fig.11 The schematic diagram is a structural diagram of an inductively coupled plasma etching device after being processed by the processing method of the present invention. DETAILED DESCRIPTION

[0046] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0047] In order to prevent the plasma from corroding the components in the vacuum reaction chamber and generating pollutants, one solution is to introduce a mixed gas of ammonia (NH3) and argon (Ar) into the vacuum reaction chamber to age the surface of the components to form a layer of silicon coating. However, this coating will affect the stability of the etching rate due to the loose surface structure, such as Figure 1As shown in the figure, in organic etching, for hydrogen (H) process, the etching rate points are continuously recorded for each substrate during the reaction time. It can be seen from the figure that for a single substrate, the etching rate fluctuates from high to low, and the experimental data of (1) and (2) show that as the number of etched substrates increases, the etching rate changes in a decreasing trend. For organic etching, for carbon (C) process, as shown in the figure, Figure 2 The four sets of experimental data show that as the number of etched substrates increases, the etching rate gradually increases from a low value to a stable region. Regardless of the above organic etching process, it causes the destruction of substrate etching uniformity and fluctuations in process parameters in mass production.

[0048] Specific reasons can be combined Figure 3 To explain, take the shower head as an example. For H-containing processes, because the surface density of the silicon (Si) coating is low, it is easy for the surface to absorb enough H, which results in a higher etching rate for subsequent organic etching. As H is consumed, the etching rate gradually decreases and tends to be stable. For C-containing processes, the low surface density of the shower head makes it easy to absorb enough C, which slows down the subsequent organic etching. As C is consumed, the etching rate gradually increases and then tends to be stable.

[0049] Embodiment 1

[0050] like Figure 4 As shown, the processing method for improving the plasma etching rate of the present invention comprises the following steps:

[0051] S1, subjecting the silicon wafer to thermal oxidation treatment to form a high-density silicon dioxide layer on its surface, and then placing the substrate into a plasma processing device;

[0052] S2, placing a gas shower head containing a protective layer into the plasma processing device, wherein the protective layer may be an yttrium oxide (Y2O3) coating or an aluminum oxide / silicon carbide (Al2O3 / SiC) coating to improve the corrosion resistance of the gas shower head;

[0053] S3, introducing an organic etching gas as a reaction gas, applying a radio frequency signal to the vacuum reaction chamber, exciting the reaction gas into plasma, and bombarding the dense silicon dioxide to cover the surface of the gas shower head;

[0054] S4, performing an organic etching process using the plasma treatment device that has completed the above steps.

[0055] After being covered with a high-density silicon film, the gas shower head can avoid the adsorption of H or C and isolate the direct corrosion of the protective layer by plasma, thereby reducing the formation of pollutants.

[0056] In some embodiments, the treatment method is performed during the warm-up process, especially after the plasma processing device has been shut down for a long time and high bias cleaning is performed. The above steps can be run, or the above steps can be repeated when an increase in contaminants is detected after multiple reactions or a large fluctuation in the reaction rate occurs.

[0057] In other embodiments, the thermal oxidation treatment of silicon wafers is carried out in a furnace tube process, the silicon wafer is placed in a temperature greater than 800°C, hydrogen (H2) and oxygen (O2) are introduced, that is, wet oxidation, the flow ratio of H2 and O2 is between 1:4-4:1, and in particular, a flow ratio of 10:7-13:10 can be selected. H2 and O2 produce water vapor under high temperature conditions, which reacts with the surface of the silicon wafer to produce high-density thermal silicon dioxide. H2 gas can increase the stress between silicon dioxide, and high stress is accompanied by high density, but too high stress can also cause the film to break easily and peel off, affecting the content of pollutants. When using plasma to bombard silicon wafers, it is preferred to make the plasma temperature less than 130°C, and control the thickness of the high-density silicon film formed on the surface of the shower head to be less than 30nm. The smaller thickness can reduce the stress on the surface molecules of the high-density silicon film, and it is not easy to fall off, that is, it will not become a source of particle pollution.

[0058] Embodiment 2

[0059] like Figure 5 As shown, the treatment method for improving the plasma etching rate of the present invention is different from the first embodiment in that, before the series of steps of placing the thermally oxidized silicon wafer, an unoxidized general silicon wafer is first placed, and then a mixed gas of NH3 and Ar is introduced to age the protective layer on the surface of the shower head, and a radio frequency signal is applied to the vacuum reaction chamber to excite the mixed gas into plasma and react with the silicon wafer. The specific reaction mechanism is as follows:

[0060] NH3+e→NH+H*

[0061] Ar+e→Ar++2e

[0062] xH*+Si→SiHx.

[0063] SiHx will be re-deposited on the surface of gas shower heads and other parts to become Si deposition layers. The physical bombardment effect of Ar+ will accelerate the deposition speed of the Si deposition layer, accelerate passivation, and generate a silicon coating on the surface of the shower head. On this basis, a silicon wafer after thermal oxidation is placed to stimulate organic etching gas plasma to cover the silicon coating of the shower head with a layer of high-density silicon film. The silicon coating and the high-density silicon film have similar structures, and are relatively stable when combined together and are not easy to fall off. The two work together to achieve a better effect of reducing pollutants. In addition, this embodiment does not need to remove the silicon coating that has been covered on the existing gas shower head before covering it with a new high-density silicon film, and has strong applicability.

[0064] In this embodiment, the organic etching gas includes H2 and silane (SiH4), and also includes one or more of oxygen (O2), carbon monoxide (CO) and carbon dioxide (CO2).

[0065] Comparative Example 1

[0066] like Figure 6 As shown, for the H-containing process in the organic etching reaction, the broken line (1) is the monitoring of the number of pollutants generated by the shower head using the silicon coating treatment method during the etching process, and the broken lines (2) and (3) are the monitoring of the number of pollutants generated during the etching process under different pressures after using the treatment method of the present invention. It can be seen that as the number of processed substrates (pcs) increases, although the silicon coating treatment method also reduces the generation of pollutants, the average value of the two sets of data still reaches 4.7 (ea). After adopting the treatment method of the present invention, the number of pollutants was measured at a pressure of 270 mTorr (mT) and recorded as the broken line (2), and the average number of pollutants was 2.8ea. The number of pollutants was measured at a pressure of 60mT and recorded as the broken line (3), and the average number of pollutants was 2.4ea. It can be seen that the treatment method of the present invention can achieve a better technical effect of preventing the generation of pollutants.

[0067] like Figure 7 As shown, for the H-containing process in the organic etching reaction, the broken line (2) is the monitoring of the etching rate of the shower head using the silicon coating treatment method, and the broken lines (1) and (3) are the monitoring of the etching rate under different pressures after using the treatment method of the present invention. It can be seen that although the reaction rate using the silicon coating treatment method is relatively stable, the average rate is 675.1 angstroms / minute. The rate of the treatment method of the present invention is higher than that of the treatment method of the present invention at the same pressure of 60mT. In the broken line (1), the treatment method of the present invention can also maintain a low average etching rate when the pressure is 270mT. In the actual reaction, it is expected that the etching rate is kept stable and not too fast, so Figure 1In the case where the etching rate of the silicon coating treatment method increases with the increase of the substrate, the etching rate first increases and then decreases. The treatment method of the present invention can better meet the actual etching needs.

[0068] Comparative Example 2

[0069] For C-containing processes in organic etching reactions, Figure 8 The figure shows the number of pollutants generated by the gas shower head after being treated by the method of the present invention. There are three sets of experimental data, each of which measures the number of pollutants in ascending order according to the number of substrates treated. It can be seen that after etching reactions of up to 425 substrates, the number of pollutants can be kept within 6. The pollutants generated by the silicon coating treatment method can reach hundreds. It can be seen that in the C-containing organic etching process, the treatment method of the present invention is also better than the silicon coating method in reducing pollutants.

[0070] like Fig. 9 As shown, for the C-containing process in the organic etching reaction, the bar graph (1) is the monitoring of the shower head etching rate after the silicon coating treatment method is used, and the bar graphs (2), (3) and (4) are the monitoring of the etching rate under different substrate numbers after the treatment method of the present invention is used. The bar graph (1) shows the change of the etching rate under the condition of a maximum of 10 substrates. According to the increase in the number of substrates, 3 groups of etching rates are selected in turn. It can be seen that the reaction rate is gradually increasing, while the bar graphs (2), (3) and (4) are respectively selected under the conditions of a maximum of 10, 125 and 340 substrates. 3 groups of etching rates are recorded in turn. It can be seen that the reaction rate has always maintained a relatively stable value. It can also be shown from the uniformity line that the treatment method of the present invention has a more stable rate than the silicon coating treatment method.

[0071] Embodiment 3

[0072] Capacitively coupled plasma (CCP) etching equipment is a device that generates plasma in a reaction chamber through capacitive coupling by applying a radio frequency power source to the electrode plate and is used for etching. Fig.10 , which is a schematic diagram of the structure of a capacitively coupled plasma (CCP) etching device, which includes a vacuum reaction chamber 100, a high-frequency radio frequency power supply, and a bias radio frequency power supply.

[0073] The vacuum reaction chamber 100 includes a substantially cylindrical reaction chamber side wall 10 made of metal material, a top cover 9, an upper electrode assembly and a lower electrode assembly.

[0074] The upper electrode assembly comprises:

[0075] A gas shower head 7, used to introduce reaction gas and also serves as an upper electrode of the reaction chamber;

[0076] A mounting substrate 8 is located above the gas shower head 7. The gas shower head 7 is fixedly connected to a top cover 9 of the reaction chamber through the mounting substrate 8;

[0077] The upper grounding ring 6 is arranged around the gas shower head 7. When the radio frequency power is applied to the lower electrode, a radio frequency loop is formed between the radio frequency power supply-lower electrode-plasma-upper electrode-upper grounding ring.

[0078] The lower electrode assembly comprises:

[0079] The base 1 is used to carry the electrostatic chuck (ESC) 2, and is equipped with a temperature control device to achieve temperature control of the upper substrate. Since it is a conductive material, it also serves as the lower electrode, and a plasma processing area is formed between the upper electrode and the lower electrode;

[0080] The electrostatic chuck 2 is used to carry the substrate w. A DC electrode is arranged inside the electrostatic chuck, and a DC adsorption is generated between the back of the substrate and the carrying surface of the electrostatic chuck 2 through the DC electrode to fix the substrate.

[0081] A focusing ring 3 is disposed around the substrate and is used to adjust the process effect of the edge area of ​​the substrate; an isolation ring 4 is disposed around the base 1 and is used to isolate the base 1 from the lower grounding ring 11;

[0082] a plasma confinement ring 5, which is located between the base and the reaction chamber side wall 10 and is used to confine the plasma to the reaction area while allowing gas to pass through;

[0083] The grounding ring 11 is located below the plasma confinement ring 5 and functions to provide electric field shielding to prevent plasma leakage.

[0084] The gas shower head 7 is arranged opposite to the base 2. The gas shower head 7 is connected to a gas supply device and is used to deliver reaction gas to the vacuum reaction chamber and serves as the upper electrode of the vacuum reaction chamber. The base 2 is used to support the substrate to be processed and serves as the lower electrode of the vacuum reaction chamber. A reaction area is formed between the upper electrode and the lower electrode. At least one high-frequency radio frequency power supply is applied to one of the upper electrode or the lower electrode to generate a radio frequency electric field between the upper electrode and the lower electrode to dissociate the reaction gas into plasma. The plasma acts on the substrate to be processed to achieve etching of the substrate.

[0085] A focus ring 3 and an edge ring are arranged around the base, and the focus ring and the edge ring are used to adjust the electric field or temperature distribution around the substrate to improve the uniformity of substrate processing. A plasma confinement ring 5 is arranged around the edge ring, and an exhaust channel is arranged on the plasma confinement ring 5. By reasonably setting the depth-width ratio of the exhaust channel, the plasma is confined in the reaction area between the upper and lower electrodes while the reaction gas is exhausted, so as to prevent the plasma from leaking into the non-reaction area and causing damage to the components in the non-reaction area.

[0086] The high frequency RF power is applied to the upper electrode or the lower electrode through a high frequency RF matching network to control the plasma concentration in the reaction chamber. The bias RF power is usually applied to the base to control the direction of the plasma.

[0087] Before the etching process, a silicon wafer oxidized by a furnace tube process is placed in a vacuum reaction chamber, and then an organic etching gas including H2, SiH4, and one or more of O2, CO and CO2 is introduced, and then a high-frequency radio frequency signal is applied. Under the excitation of the radio frequency signal, the organic gas is excited into plasma, bombarding the oxidized silicon wafer, covering the surface of the component with high-density silicon dioxide molecules, and forming a high-density silicon film.

[0088] The capacitively coupled plasma (CCP) etching equipment adopts the processing method of the present invention to uniformly form a layer of high-density silicon film on the surface of the parts that may be exposed to the plasma in the etching chamber, thereby isolating the Y2O3 coating or Al2O3 / SiC coating protective layer of the parts from direct contact with the plasma, reducing the possibility of micro-particle contamination formed in the etching process, and avoiding the adsorption of H or C in the organic etching gas on the surface of the parts and the unstable effect on the etching rate.

[0089] Example 4

[0090] Inductively coupled plasma (ICP) etching equipment is a device that couples the energy of a radio frequency power source into a reaction chamber in the form of a magnetic field through an inductive coil, thereby generating plasma for etching. Fig.11 , which is a schematic diagram of the structure of an inductively coupled plasma reaction device (ICP). The structures of the lower electrode assemblies of ICP and CCP are similar.

[0091] The inductively coupled plasma reaction device includes a vacuum reaction chamber 100, which includes a roughly cylindrical reaction chamber side wall 105 made of metal material. An insulating window 130 is arranged above the reaction chamber side wall 105, and an inductive coupling coil 140 is arranged above the insulating window 130. The inductive coupling coil 140 is connected to a radio frequency power source 145.

[0092] A gas injection port 150 is provided at one end of the reaction chamber side wall 105 close to the insulating window 130. In some devices, a gas injection port is also provided in the central area of ​​the insulating window 130. The gas injection port 150 is connected to the gas supply device 101. The reaction gas in the gas supply device 101 enters the vacuum reaction chamber 100 through the gas injection port 150. The RF power of the RF power source 145 drives the inductive coupling coil 140 to generate a strong high-frequency alternating magnetic field, so that the low-pressure reaction gas is ionized to generate plasma 160. A base 110 is provided at the downstream position of the vacuum reaction chamber 100, and an electrostatic chuck 115 is placed on the base 110 to support and fix the substrate 120. The plasma 160 contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. The above-mentioned active particles can undergo various physical and chemical reactions with the surface of the substrate to be processed, so that the morphology of the substrate surface changes, that is, the etching process is completed. An exhaust pump 125 is also disposed below the vacuum reaction chamber 100 to discharge reaction by-products from the vacuum reaction chamber.

[0093] Before the etching process, a silicon wafer oxidized by a furnace tube process is placed in a vacuum reaction chamber, and then an organic etching gas including H2, SiH4 and one or more of O2, CO and CO2 is introduced, and then a high-frequency radio frequency signal is applied. Under the excitation of the radio frequency signal, the organic gas is excited into plasma, bombarding the thermally oxidized silicon wafer, covering the surface of the component with high-density silicon dioxide molecules, and forming a high-density silicon film.

[0094] The above-mentioned inductively coupled plasma (CCP) etching equipment adopts the processing method of the present invention to uniformly form a high-density silicon film on the surface of the parts that may be exposed to the plasma in the etching chamber, thereby isolating the Y2O3 coating or Al2O3 / SiC coating protective layer of the parts from direct contact with the plasma, reducing the possibility of micro-particle contamination formed in the etching process, and avoiding the adsorption of H or C in the organic etching gas on the surface of the parts and the unstable effect on the etching rate.

[0095] The component for improving plasma etching rate disclosed in the present invention is not limited to being applied to the plasma processing devices of the above two embodiments, but can also be applied to other plasma processing devices, which will not be described in detail here.

[0096] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A method for improving plasma etching rate, characterized in that: The method comprises the following steps: Placing the components in a vacuum reaction chamber; Placing a silicon wafer that has undergone thermal oxidation treatment in the vacuum reaction chamber; Introducing an organic etching gas into the vacuum reaction chamber; Applying a radio frequency signal to the vacuum reaction chamber, the radio frequency signal excites the organic etching gas into plasma, and the particles generated by the plasma bombardment of the silicon wafer form a silicon film on the surface of the component; The components refer to the components in the vacuum reaction chamber that are in contact with the plasma.

2. The processing method according to claim 1, characterized in that: The thermal oxidation treatment comprises the following steps: The silicon wafer is placed in a furnace tube with a temperature greater than 800° C., and H2 and O2 are introduced, wherein the flow ratio of H2 to O2 is 1:4-4:

1.

3. The processing method according to claim 2, characterized in that: The flow ratio of H2 and O2 is 10:7-13:

10.

4. The processing method according to claim 1, characterized in that: The organic etching gas includes H2, SiH4 and oxygen-containing gas.

5. The processing method according to claim 4, characterized in that: The oxygen-containing gas includes one or more of O2, CO and CO2.

6. The processing method according to claim 5, characterized in that: The temperature of the plasma is less than 130°C.

7. The processing method according to claim 1, characterized in that: The process conditions of the plasma are: pressure less than 150mT; radio frequency power greater than 200W; radio frequency range 2-60MHZ.

8. The processing method according to claim 7, characterized in that: The radio frequency signal adopts a continuous mode or a pulse mode.

9. The processing method according to claim 1, characterized in that: The thickness of the silicon film is less than 30 nm.

10. The processing method according to claim 1, characterized in that: The components include at least one of a reaction chamber inner wall, a grounding ring, a moving ring, an electrostatic chuck assembly, a covering ring, a focusing ring, an insulating ring, a plasma confinement device and an inner liner.

11. The processing method according to claim 1, characterized in that: The surface of the component is provided with a protective layer for preventing plasma corrosion.

12. The processing method according to claim 11, characterized in that: The protective layer is a Y2O3 coating or an Al2O3 / SiC coating.

13. The processing method according to claim 11, characterized in that A silicon coating is arranged on the protective layer to prevent the generation of pollutants.

14. A component for use in a plasma processing environment, comprising a component body, characterized in that: The surface of the body is provided with a protective layer for preventing plasma corrosion, and the protective layer is a Y2O3 coating or an Al2O3 / SiC coating, and A silicon film wrapped around the outer surface of the protective layer; the silicon film is formed by the processing method described in any one of claims 1-13.

15. The component according to claim 14, characterized in that The components are components in contact with the plasma in the vacuum reaction chamber, including at least one of the inner wall of the reaction chamber, a grounding ring, a moving ring, an electrostatic chuck assembly, a covering ring, a focusing ring, an insulating ring, a plasma confinement device and an inner liner.

16. A gas shower head for a plasma processing device, characterized in that: The gas shower head includes: Gas sprinkler head body; A protective layer for preventing plasma corrosion wrapped on the surface of the body, the protective layer being a Y2O3 coating or an Al2O3 / SiC coating, and A silicon film wrapped around the outer surface of the protective layer; the silicon film is formed by the processing method described in any one of claims 1-13.

17. A plasma processing device, characterized in that: The device comprises: a vacuum reaction chamber, and components located in the vacuum reaction chamber and in contact with plasma, wherein the components are the components described in claim 14.

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