Substrate cleaning method and substrate cleaning device

Abstract

The present application discloses a substrate cleaning method and a substrate cleaning device. The technology disclosed in the specification of the present application is a technology for suppressing the residue of a cleaning liquid in a cleaning nozzle for cleaning a substrate held by a Bernoulli chuck. In the technology disclosed in the specification of the present application, the substrate cleaning method is a substrate cleaning method for cleaning a substrate held by a Bernoulli chuck, and comprises: a process of supplying a cleaning liquid to a surface opposite to a holding surface of the substrate, that is, a lower surface of the substrate, through a cleaning nozzle; and a process of sucking the cleaning nozzle after the process of supplying the cleaning liquid while the substrate is held by the Bernoulli chuck.

Description

Technical Field

[0001] The technology disclosed in the present application specification relates to a technology for cleaning substrates. The substrates to be processed including cleaning include, for example, semiconductor wafers, glass substrates for liquid crystal display devices, substrates for flat panel displays (FPDs) such as organic EL (electroluminescence) display devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, glass substrates for photomasks, ceramic substrates, substrates for field emission displays (FEDs), or substrates for solar cells. Background Art

[0002] As a method of holding a substrate in a substrate processing apparatus, there is a Bernoulli chuck that holds a substrate in a non-contact manner using the Bernoulli principle (see, for example, Patent Document 1).

[0003] In a substrate processing apparatus, when cleaning a substrate held by a Bernoulli chuck, a cleaning liquid may be ejected onto the upper surface or the lower surface of the substrate to clean the substrate.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2016-149420 Summary of the invention

[0007] Problems to be solved by the invention

[0008] Regarding the cleaning method of using a cleaning nozzle disposed below the substrate to spray a cleaning liquid onto the lower surface of the substrate, it is possible that cleaning liquid remains in the cleaning nozzle after the cleaning process. The cleaning liquid remaining in the cleaning nozzle may cause problems such as particles adhering to the substrate in subsequent processing steps, so it is desired to remove it appropriately.

[0009] The technology disclosed in the present specification is a technology proposed in view of the above-mentioned problem, and suppresses the problem that a cleaning liquid used to clean a substrate held by a Bernoulli chuck remains in a cleaning nozzle.

[0010] Solutions to Solve Problems

[0011] In the technology disclosed in the specification of the present application, a first scheme of a substrate cleaning method is a substrate cleaning method for cleaning a substrate held by a Bernoulli chuck, which comprises: a process of supplying a cleaning liquid to a surface opposite to a holding surface holding the substrate, i.e., a lower surface of the substrate, via a cleaning nozzle; and after the process of supplying the cleaning liquid, a process of suctioning the inside of the cleaning nozzle while the substrate is held by the Bernoulli chuck.

[0012] In the technology disclosed in the specification of the present application, the second scheme of the substrate cleaning method is related to the first scheme of the substrate cleaning method, and further comprises: a process of supplying a chemical solution to the upper surface of the substrate before the process of supplying the cleaning liquid to the lower surface of the substrate; and a process of supplying a gas to the lower surface of the substrate via a gas nozzle while the substrate is held by a Bernoulli suction cup during the process of supplying the chemical solution and during the process of supplying the cleaning liquid to the lower surface of the substrate, wherein the gas supplied via the gas nozzle flows from the radial inner side to the radial outer side of the substrate in a plan view.

[0013] In the technology disclosed in the present specification, a substrate cleaning method according to a third aspect is related to the substrate cleaning method according to the second aspect, wherein the gas nozzle is a common nozzle with the cleaning nozzle.

[0014] In the technology disclosed in the present application specification, a fourth substrate cleaning method is the substrate cleaning method of any one of the first to third schemes, further comprising a step of supplying the cleaning liquid to the upper surface of the substrate during the step of suctioning the inside of the cleaning nozzle.

[0015] In the technology disclosed in the present application specification, the substrate cleaning method of the fifth scheme is a substrate cleaning method of any one of the first to fourth schemes, and further includes a process of supplying the cleaning liquid to the upper surface of the substrate during the process of supplying the cleaning liquid to the lower surface of the substrate.

[0016] In the technology disclosed in the present specification, a sixth substrate cleaning method is the substrate cleaning method according to any one of the first to fifth aspects, further comprising a step of drying the substrate after the step of suctioning the inside of the cleaning nozzle.

[0017] In the technology disclosed in the specification of this application, the substrate cleaning method of the seventh scheme is related to the substrate cleaning method of the sixth scheme, and suction is also performed in the cleaning nozzle during the process of drying the substrate. In the process of drying the substrate, at least one of the rotation speed of the substrate and the suction amount in the cleaning nozzle is controlled to adjust the pressure in the space between the substrate and the holding surface to within a predetermined range.

[0018] In the technology disclosed in the specification of the present application, the substrate cleaning method of the eighth scheme is related to the substrate cleaning method of the sixth or seventh scheme, and includes a process of drying the substrate without rotating the substrate when the substrate is not held by the Bernoulli chuck, and also includes a process of supplying gas to the lower surface of the substrate during the process of drying the substrate, wherein the supplied gas flows from the radial inner side to the radial outer side of the substrate when viewed from above.

[0019] In the technology disclosed in the specification of the present application, a ninth scheme of the substrate cleaning method is related to the sixth or seventh scheme of the substrate cleaning method, and the process of drying the substrate is performed multiple times. As for the process of drying the substrate, after the process is performed without rotating the substrate when the substrate is not held by the Bernoulli chuck, the process is performed by rotating the substrate when the substrate is held by the Bernoulli chuck. The method also includes a process of supplying gas to the lower surface of the substrate during the process of drying without rotating the substrate, and the supplied gas flows from the radial inner side to the radial outer side of the substrate when viewed from above.

[0020] In the technology disclosed in the specification of the present application, a substrate cleaning device of the tenth scheme cleans a substrate held by a Bernoulli chuck, and the substrate cleaning device comprises: a unit for supplying cleaning liquid to a surface opposite to a holding surface holding the substrate, i.e., a lower surface of the substrate, via a cleaning nozzle; and a unit for suctioning the inside of the cleaning nozzle while the substrate is held by the Bernoulli chuck after the cleaning liquid is supplied.

[0021] Effects of the Invention

[0022] In the technology disclosed in the present specification, according to at least the first and tenth aspects, when the substrate is held by the Bernoulli chuck, it is possible to suppress the cleaning liquid from remaining in the cleaning nozzle located on the lower surface of the substrate.

[0023] In addition, in the technology disclosed in the present application specification, the objects, features, aspects, and advantages involved will become more apparent from the following detailed description and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a plan view schematically showing a configuration example of a substrate processing apparatus according to an embodiment.

[0025] Figure 2 Yes means Figure 1 A diagram showing an exemplary configuration of a control unit.

[0026] Figure 3 This is a diagram schematically showing a configuration example of a processing unit according to an embodiment.

[0027] Figure 4 This is a diagram schematically showing a main structural example of a spin chuck.

[0028] Figure 5 This is a flowchart showing the operation of the processing unit in the operation of the substrate processing apparatus.

[0029] Figure 6 It is a diagram showing the timing of substrate processing.

[0030] Figure 7 It is a diagram showing the timing of substrate processing.

[0031] Figure 8 It is a diagram showing the timing of substrate processing.

[0032] Fig. 9 It is a diagram showing the timing of substrate processing.

[0033] In the figure:

[0034] 1—substrate processing device; 16—lower surface; 20—outer edge; 50—processing chamber; 50A—partition wall; 50B—opening; 50C—gate; 51—rotating suction cup; 52—chemical liquid nozzle; 54—chemical liquid supply pipe; 56, 62, 111, 112, 113—adjusting valve; 60—cleaning liquid nozzle; 61, 109—cleaning liquid supply pipe; 90—control unit; 91—CPU; 92—ROM; 93—RAM; 94—storage device; 94P—processing program; 95—bus; 96—input unit; 97—display unit; 98—communication unit; 10 1—plate; 102—upper surface; 103—fixing pin; 104, 106—blowing outlet; 105—cleaning nozzle; 107, 108—gas supply piping; 152—liquid arm; 152A, 160A—rotational drive source; 152B, 160B—arm; 160—washing liquid arm; 180—chamber; 192—rotational axis; 193—rotational drive unit; 511—processing cup; 513—drain outlet; 515—exhaust outlet; 600—processing unit; 601—loading port; 602—indexing robot; 603—central robot; 604—substrate mounting unit. DETAILED DESCRIPTION

[0035] In the following embodiments, detailed features and the like are shown for the purpose of explaining the technology, but these are merely examples, and not all of them are essential features for carrying out the embodiments.

[0036] In addition, the accompanying drawings are schematically shown, and the structure is appropriately omitted or simplified for the convenience of explanation. In addition, the mutual relationship between the size and position of the structure, etc. between the various figures does not necessarily have to be strictly and accurately recorded, and can be appropriately changed. In addition, in addition to the cross-sectional view, in the top view and other figures, hatching is sometimes added to facilitate the understanding of the content of the embodiment.

[0037] In the following description, the same components are denoted by the same reference numerals and the same applies to their names and functions, and therefore, their detailed description may be omitted in order to avoid duplication.

[0038] Furthermore, in the descriptions described in the specification of the present application, the descriptions such as “having”, “including” or “having” a certain structural element do not constitute exclusive expressions excluding the existence of other structural elements unless otherwise specified.

[0039] In the descriptions recorded in the specification of the present application, even if ordinal numbers such as "first" or "second" are used, these terms are used only to facilitate easy understanding of the contents of the embodiments, and are not limited to the order that these ordinal numbers can form.

[0040] In addition, in the descriptions recorded in the specification of the present application, expressions indicating relative or absolute positional relationships, such as "in a direction", "along a direction", "parallel", "orthogonal", "center", "concentric" or "coaxial", etc., unless otherwise specified, their meanings include the situation where the positional relationship is strictly indicated, and the situation where there is a tolerance or the angle or distance is changed within the range that can achieve the same degree of functionality.

[0041] In addition, in the description recorded in the specification of this application, even if terms such as "up", "down", "left", "right", "side", "bottom", "front" or "inside" are used to indicate specific positions or directions, these terms are used only to facilitate easy understanding of the contents of the implementation method and have nothing to do with the position or direction during actual implementation.

[0042] In addition, in the descriptions recorded in the specification of the present application, the descriptions such as "the upper surface of..." or "the lower surface of..." include, in addition to the upper surface or the lower surface of the target structural element itself, also the state where other structural elements are formed on the upper surface or the lower surface of the target structural element. That is, for example, the description of "B is provided on the upper surface of A" does not exclude the existence of another structural element "C" between A and B.

[0043] <Implementation Method>

[0044] The substrate processing apparatus according to this embodiment will be described below.

[0045] <About the structure of substrate processing apparatus>

[0046] Figure 1 601, an indexing robot 602, a central robot 603, a control unit 90, and at least one processing unit 600 (in Figure 1 There are four processing units in the figure).

[0047] The processing unit 600 is a single-chip device that can be used in substrate processing, and specifically, is a device that performs processing to remove organic matter attached to the substrate W. The organic matter attached to the substrate W is, for example, a used resist film. The resist film is used, for example, as an implantation mask for an ion implantation process.

[0048] In addition, the processing unit 600 may include a chamber 180. At this time, the control unit 90 controls the atmosphere in the chamber 180, so that the processing unit 600 can perform substrate processing in a desired atmosphere.

[0049] The control unit 90 can control the operation of each structure in the substrate processing device 1 (gate 50C, adjustment valve 56, adjustment valve 62, adjustment valve 111, adjustment valve 112, adjustment valve 113, rotation drive source 152A, rotation drive source 160A, rotation drive unit 193, etc. described later). The carrier C is a container for storing substrates W. In addition, the loading port 601 is a container holding mechanism for holding a plurality of carriers C. The indexing robot 602 can transport the substrate W between the loading port 601 and the substrate mounting unit 604. The central robot 603 can transport the substrate W between the substrate mounting unit 604 and the processing unit 600.

[0050] According to the above configuration, the index robot 602 , the substrate placement unit 604 , and the central robot 603 function as a transport mechanism for transporting the substrate W between each processing unit 600 and the load port 601 .

[0051] The unprocessed substrate W is taken out from the carrier C by the index robot 602 . Then, the unprocessed substrate W is transferred to the central robot 603 via the substrate placement unit 604 .

[0052] The central robot 603 carries the unprocessed substrate W into the processing unit 600 . Then, the processing unit 600 processes the substrate W.

[0053] In the processing unit 600, the processed substrate W is taken out of the processing unit 600 by the central robot 603. And, after passing through other processing units 600 as needed, the processed substrate W is transferred to the indexing robot 602 via the substrate loading unit 604. The indexing robot 602 carries the processed substrate W into the carrier C. The substrate W is processed in the above manner.

[0054] Figure 2 Yes means Figure 1 FIG. 1 is a diagram showing an example of the structure of the control unit 90. The control unit 90 can be formed by a general computer having circuits. Specifically, the control unit 90 includes a central processing unit (CPU) 91, a read only memory (ROM) 92, a random access memory (RAM) 93, a storage device 94, an input unit 96, a display unit 97, a communication unit 98, and a bus 95 that connects the above-mentioned units to each other.

[0055] The ROM 92 stores a basic program. The RAM 93 is used as a work area when the CPU 91 performs a predetermined process. The storage device 94 is composed of a non-volatile storage device such as a flash memory or a hard disk device. The input unit 96 is composed of various switches or a touch panel, etc., and receives input setting instructions for the processing recipe, etc. from the user. The display unit 97 is composed of, for example, a liquid crystal display device and a lamp, etc., and displays various information under the control of the CPU 91. The communication unit 98 has a data communication function via a local area network (LAN) or the like.

[0056] A plurality of modes are preset in the storage device 94. Figure 1 The CPU 91 executes the processing program 94P, thereby selecting a mode from the above-mentioned multiple modes and controlling each structure in this mode. In addition, the processing program 94P can also be stored in an external storage medium. If such a storage medium is used, the processing program 94P can be installed in the control unit 90. In addition, part or all of the functions performed by the control unit 90 do not necessarily have to be implemented by software, and can also be implemented by hardware such as a dedicated logic circuit.

[0057] Figure 3 1 is a diagram schematically showing a configuration example of the processing unit 600 according to the present embodiment. In order to facilitate understanding of the configuration, some components are omitted or simplified in this diagram.

[0058] The processing unit 600 performs various processes (cleaning process or etching process, etc.) on the substrate W, including fluid processing using a processing liquid (i.e., a processing liquid including a chemical solution, a cleaning liquid or a washing liquid) or a gas, processing using electromagnetic waves such as ultraviolet rays, or physical cleaning processing (such as brushing or nozzle cleaning, etc.).

[0059] like Figure 3 As shown in the example, the processing unit 600 includes: a processing chamber 50, which is box-shaped and has an internal space; a rotating suction cup 51, which holds a substrate W in a horizontal posture in the processing chamber 50 and rotates the substrate W around a vertical rotation axis Z1, wherein the rotation axis Z1 passes through the center of the substrate W; and a cylindrical processing cup 511, which surrounds the rotating suction cup 51 around the rotation axis Z1 of the substrate W.

[0060] The processing chamber 50 is surrounded by a box-shaped partition wall 50A. An opening 50B for carrying the substrate W into or out of the processing chamber 50 is formed in the partition wall 50A.

[0061] The opening 50B is opened and closed by the shutter 50C. The shutter 50C can be moved to a closed position (in a closed position) covering the opening 50B by a shutter lifting mechanism (not shown). Figure 3 The opening position (indicated by a two-dot chain line in FIG. 1 ) and the opening position (indicated by a two-dot chain line in FIG. 1 ) in which the opening 50B is opened Figure 3 The solid line in the figure indicates the rise and fall between them.

[0062] When carrying in and out the substrate W, the central robot 603 enters the processing chamber 50 through the opening 50B using a robot arm. Thus, an unprocessed substrate W can be placed on the upper surface of the spin chuck 51 or a processed substrate W can be taken out from the spin chuck 51 .

[0063] like Figure 3 As shown in the example, the spin chuck 51 includes a plate 101 facing the lower surface of the substrate W, a rotation shaft 192 connected to the lower surface of the plate 101 , and a rotation drive unit 193 that rotates the rotation shaft 192 around a rotation axis Z1 .

[0064] like Figure 3 As shown in the example, the processing unit 600 includes: a liquid nozzle 52 that sprays liquid toward the upper surface of the substrate W held by the rotating suction cup 51; a liquid arm 152 that has the liquid nozzle 52 installed at the front end; a liquid supply piping 54 that guides the liquid from a liquid supply source (not shown here) to the liquid nozzle 52; and an adjustment valve 56 that opens and closes the interior of the liquid supply piping 54.

[0065] The chemical liquid arm 152 includes a rotation drive source 152A and an arm portion 152B that is rotatable by the rotation drive source 152A attached to one end and to which the chemical liquid nozzle 52 is attached to the other end.

[0066] The liquid medicine arm 152 rotates the arm 152B by using the rotation drive source 152A, so that the liquid medicine nozzle 52 installed at the front end of the arm 152B can move along the upper surface of the substrate W held by the spin chuck 51. That is, the liquid medicine nozzle 52 installed at the front end of the arm 152B can move in the horizontal direction. Here, the driving of the rotation drive source 152A is controlled by the control unit 90.

[0067] The opening and closing of the regulating valve 56 is controlled by the control unit 90. When the chemical liquid is supplied to the chemical liquid nozzle 52, the regulating valve 56 is opened. On the other hand, when the supply of the chemical liquid to the chemical liquid nozzle 52 is stopped, the regulating valve 56 is closed.

[0068] In addition, if Figure 3 As shown in the example, the processing unit 600 includes: a cleaning liquid nozzle 60 that sprays cleaning liquid toward the upper surface of the substrate W held by the spin chuck 51; a cleaning liquid arm 160, at the front end of which the cleaning liquid nozzle 60 is mounted; a cleaning liquid supply pipe 61 that supplies the cleaning liquid from a cleaning liquid supply source (not shown here) to the cleaning liquid nozzle 60; and an adjustment valve 62 that switches the supply and stop of the cleaning liquid from the cleaning liquid supply pipe 61 to the cleaning liquid nozzle 60. As the cleaning liquid, DIW (deionized water) or the like can be used.

[0069] The cleaning liquid arm 160 includes a rotation drive source 160A and an arm portion 160B that is rotatable by the rotation drive source 160A attached to one end and to which the cleaning liquid nozzle 60 is attached to the other end.

[0070] The cleaning liquid arm 160 can rotate the arm 160B by using the rotation drive source 160A, so that the cleaning liquid nozzle 60 installed at the front end of the arm 160B can be moved along the upper surface of the substrate W held by the spin chuck 51. That is, the cleaning liquid nozzle 60 installed at the front end of the arm 160B can move in the horizontal direction. Here, the driving of the rotation drive source 160A is controlled by the control unit 90.

[0071] After the chemical liquid is supplied to the substrate W through the chemical liquid nozzle 52 , the cleaning liquid is supplied to the substrate W from the cleaning liquid nozzle 60 , so that the chemical liquid attached to the substrate W and the like can be rinsed off.

[0072] The processing cup 511 is disposed around the spin chuck 51 and is vertically moved up and down by a motor (not shown). The upper portion of the processing cup 511 is moved up and down between an upper position where the upper end is above the substrate W held by the spin chuck 51 and a lower position where the upper end is below the substrate W.

[0073] The processing liquid splashing outward from the upper surface of the substrate W is blocked by the inner side of the processing cup 511. The processing liquid blocked by the processing cup 511 is discharged to the outside of the processing chamber 50 at the bottom of the processing chamber 50 through the drain port 513 provided on the inner side of the processing cup 511.

[0074] In addition, an exhaust port 515 communicating with the processing cup 511 is provided at the side of the processing chamber 50. The exhaust port 515 can appropriately exhaust the atmosphere in the processing chamber 50 to the outside of the processing chamber 50.

[0075] Figure 4 1 is a schematic diagram showing a main structural example of the spin chuck 51. The spin chuck 51 includes a plate 101 facing the lower surface of the substrate W. The plate 101 is generally disc-shaped. The upper surface 102 of the plate 101 is generally flat and is generally horizontally arranged. The diameter of the plate 101 is larger than the diameter of the substrate W when viewed from above.

[0076] A rotation shaft 192 is connected to the lower surface of the plate 101 (that is, the surface opposite to the upper surface 102). The rotation shaft 192 is connected to the lower surface of the plate 101. Figure 3 The illustrated rotation drive unit 193 rotates around a rotation axis Z1 . The rotation axis Z1 is parallel to the vertical direction Z. The rotation axis Z1 is a line passing through the center of the plate 101 .

[0077] The rotation drive unit 193 rotates the rotation shaft 192 to rotate the plate 101 connected to the upper end of the rotation shaft 192 and the substrate W held thereby in a horizontal plane.

[0078] The fixing pins 103 protrude upward from the upper surface 102 of the plate 101. The fixing pins 103 are in contact with the lower surface 16 of the substrate W. More specifically, the fixing pins 103 are in contact with the lower surface 16 of the peripheral portion of the substrate W. Thus, the fixing pins 103 support the substrate W at a position higher than the upper surface 102 of the plate 101. In addition, the outer periphery of the substrate W may be held by a plurality of suction cup pins, etc., not shown.

[0079] The fixing pins 103 do not contact the upper surface of the substrate W. That is, the fixing pins 103 allow the substrate W to move upward relative to the fixing pins 103. The fixing pins 103 do not contact the outer edge 20 of the substrate W. The fixing pins 103 themselves allow the substrate W to slide relative to the fixing pins 103. In this way, the fixing pins 103 themselves do not hold the substrate W.

[0080] The rotary suction cup 51 has a blow outlet 104. The blow outlet 104 is formed on the upper surface 102 of the plate 101. In a plan view, the blow outlet 104 is arranged at a position overlapping with the substrate W supported by the fixing pins 103. The blow outlet 104 blows gas upward. The blow outlet 104 blows gas between the upper surface 102 of the plate 101 and the lower surface 16 of the substrate W supported by the fixing pins 103. The blown gas flows along the lower surface 16 of the substrate W supported by the fixing pins 103.

[0081] As a result, the blow outlet 104 sucks the substrate W. Specifically, since the gas flows along the lower surface 16 of the substrate W, a negative pressure is formed between the upper surface 102 of the plate 101 and the lower surface 16 of the substrate W. That is, the air pressure on the lower surface 16 of the substrate W is smaller than the air pressure on the upper surface of the substrate W. Therefore, according to the Bernoulli principle, a downward force is applied to the substrate W. That is, the substrate W is sucked downward (Bernoulli suction cup). The substrate W is sucked toward the blow outlet 104 and the plate 101. However, the blow outlet 104 and the plate 101 do not contact the substrate W.

[0082] The blow outlet 104 sucks the substrate W downward and contacts the lower surface 16 of the substrate W through the fixing pins 103, thereby supporting the substrate W and holding it at a predetermined position. In addition, the suction force acting on the substrate W prevents the substrate W from sliding in the horizontal direction relative to the fixing pins 103. That is, the spin chuck 51 sucks and holds the substrate W on the plate 101.

[0083] The blowout port 104 includes a blowout port located in the center of the substrate W in a plan view, and a plurality of blowout ports 106 located in the periphery of the substrate W in a plan view. In this embodiment, the blowout port located in the center of the substrate W is the same as the cleaning nozzle 105 that ejects a cleaning liquid (washing liquid).

[0084] The cleaning nozzle 105 is, for example, arranged on the rotation axis Z1 of the plate 101. The blowing outlet 106 is arranged radially outward of the rotation axis Z1 of the plate 101 relative to the cleaning nozzle 105. The blowing outlet 106 is arranged radially inward of the rotation axis Z1 of the plate 101 relative to the fixing pin 103. The blowing outlet 106 is arranged, for example, on a circumference around the rotation axis Z1 in a plan view. In addition, the blowing outlet 106 is formed to be inclined so that the gas is blown radially outward of the substrate.

[0085] A gas supply pipe 107 for supplying gas from a gas supply source (not shown here) to the blowout port 104 and a gas supply pipe 108 are provided inside the rotating shaft 192 and inside the plate 101. The gas supply pipe 107 supplies gas to the blowout port common to the cleaning nozzle 105. In addition, the gas supply pipe 108 supplies gas to the blowout port 106.

[0086] The gas supplied to the cleaning nozzle 105 and the blowing outlet 106 is, for example, an inert gas such as nitrogen or air. In addition, the gas supplied to the cleaning nozzle 105 and the blowing outlet 106 is, for example, a high-pressure gas or a compressed gas.

[0087] The gas supply pipe 107 is provided with an adjustment valve 111. The opening and closing of the adjustment valve 111 is controlled by the control unit 90, thereby controlling the flow rate and blowing timing of the gas blown out from the blowout port common to the cleaning nozzle 105. Similarly, the gas supply pipe 108 is provided with an adjustment valve 112. The opening and closing of the adjustment valve 112 is controlled by the control unit 90, thereby controlling the flow rate and blowing timing of the gas blown out from the blowout port 106.

[0088] The regulating valve 111 and the regulating valve 112 can be controlled independently of each other. Therefore, the flow rate of the gas blown out of the cleaning nozzle 105 and the flow rate of the gas blown out of the blowing port 106 can be adjusted independently of each other.

[0089] Furthermore, a cleaning liquid supply pipe 109 is provided inside the rotating shaft 192 and inside the plate 101 for supplying cleaning liquid from a cleaning liquid supply source (not shown here) to the cleaning nozzle 105. The cleaning liquid supplied to the cleaning nozzle 105 is, for example, DIW (deionized water).

[0090] The cleaning liquid supply pipe 109 is provided with an adjustment valve 113. By controlling the opening and closing of the adjustment valve 113 by the control unit 90, the flow rate and the timing of the cleaning liquid sprayed from the cleaning nozzle 105 are controlled.

[0091] The gas supply pipe 107 and the cleaning liquid supply pipe 109 merge near the cleaning nozzle 105. Therefore, when the cleaning liquid is supplied from the cleaning liquid supply pipe 109 at the same time as the gas is supplied from the gas supply pipe 107, a gas-liquid mixture of the cleaning liquid and the inert gas is supplied from the cleaning nozzle 105 to the lower surface of the substrate W.

[0092] A plurality of position adjustment pins and a plurality of guide pins (not shown here) may also be provided on the upper surface 102 of the plate 101. The position adjustment pins can contact the outer edge portion 20 of the substrate W supported by the fixed pins 103, and can adjust the position of the substrate W in the horizontal direction. The position adjustment pins are intermittently arranged along the outer edge portion 20 of the substrate W, for example, arranged one by one by rotating 30° in the circumferential direction of the substrate W. The guide pins are pins used to prevent the substrate W held by the Bernoulli suction cup from falling off the rotating suction cup 51 due to defects in the holding state, etc., and are arranged at a position that does not contact the substrate W on the radial outside of the substrate W held by the rotating suction cup 51. The guide pins are intermittently arranged along the outer edge portion 20 of the substrate W, for example, arranged one by one by rotating 30° in the circumferential direction of the substrate W.

[0093] <About the operation of the substrate processing apparatus>

[0094] Next, refer to Figure 5 An operation example of the substrate processing apparatus 1 is described. Specifically, a substrate processing method including cleaning of the substrate W is described. Figure 5 1 is a flowchart showing the operation of the processing unit 600 in the operation of the substrate processing apparatus 1 .

[0095] The indexing robot 602 transfers the substrate W from the carrier C of the load port 601 to the substrate mounting portion 604. The central robot 603 transfers the substrate W from the substrate mounting portion 604 to one of the processing units 600. The processing unit 600 processes the substrate W. The central robot 603 transfers the substrate W from the processing unit 600 to the substrate mounting portion 604. The indexing robot 602 transfers the substrate W from the substrate mounting portion 604 to the carrier C of the load port 601.

[0096] In the processing unit 600 , the end portion and the lower surface of the substrate W are supported by a plurality of guide pins and fixing pins 103 , thereby temporarily holding the substrate W on the spin chuck 51 .

[0097] Here, the control unit 90 appropriately controls the adjustment valves 111 and 112, thereby blowing out an inert gas such as nitrogen from the cleaning nozzle 105 and the blowing port 106. As a result, the gas blown out from the cleaning nozzle 105 is sprayed toward the central portion of the lower surface of the substrate W and flows radially outward of the substrate W. In addition, the gas blown out from the blowing port 106 is sprayed toward the peripheral portion of the lower surface of the substrate W in a manner inclined radially outward, and flows radially outward of the substrate W. The substrate W is held on the spin chuck 51 (Bernoulli chuck) in a non-contact manner by the Bernoulli principle.

[0098] As a substrate treatment in the processing unit 600, first, the thickness of a film composed of organic matter or the like formed on the upper surface of the substrate W is measured. When measuring the film thickness, for example, an optical displacement sensor (not shown) is used. When measuring the film thickness, the substrate W is rotated at, for example, 100 rpm while measuring. For example, by rotating the substrate W at 1200 rpm, the time required for measuring the film thickness can be shortened. Next, a chemical solution (for example, a mixed solution of hydrofluoric acid (HF) and nitric acid (HNO3), i.e., fluorine nitric acid) is supplied to the upper surface of the substrate W to perform a predetermined chemical solution treatment ( Figure 5 At this time, the film thickness is measured again while the chemical solution is supplied, and it can be confirmed whether the difference with the measured value in the previous process is within the predetermined range. In addition, if it is out of the above range, the user can be informed by, for example, issuing an alarm. After that, a cleaning liquid such as pure water (DIW) is supplied to the substrate W for cleaning ( Figure 5 In addition, the substrate W is dried by spinning the substrate W at high speed to remove the cleaning liquid ( Figure 5 Then, the thickness of the film formed on the upper surface of the substrate W is measured by using the above-mentioned optical displacement sensor or the like to confirm whether the film has been properly removed by the chemical solution treatment.

[0099] The above-mentioned chemical liquid treatment can be performed by spraying chemical liquid from the chemical liquid nozzle 52 toward the upper surface of the substrate W. In addition, the cleaning treatment can be performed by supplying a cleaning liquid sprayed from the cleaning liquid nozzle 60 located on the upper surface side of the substrate W and a cleaning liquid sprayed from the cleaning nozzle 105 located on the lower surface side of the substrate W in an appropriate combination.

[0100] In addition, regarding the above-mentioned film thickness measurement, particles removed from the substrate W are lifted up by rotating the substrate W at a high speed and may be attached to the substrate W again to form particles. Therefore, when the substrate W is rotated at a high speed to perform film thickness measurement, it is preferred that the upper end of the processing cup 511 is directed upward relative to the substrate W, and the particles flow radially outward of the substrate W in the space formed between the upper end of the processing cup 511 and the substrate W, and are appropriately exhausted from the exhaust port 515 provided at the bottom of the processing unit 600.

[0101] <Details on substrate processing>

[0102] Next, refer to Figures 6 to 9 The details of the substrate processing (mainly from the chemical solution processing to the drying processing) are described. Figures 6 to 9 FIG. 1 is a diagram showing the timing of substrate processing. Figures 6 to 9In the above, the chemical liquid treatment is a treatment in which a chemical liquid is supplied from the chemical liquid nozzle 52 to the substrate W. In addition, the upper surface cleaning treatment is a treatment in which a cleaning liquid is supplied from the cleaning liquid nozzle 60 to the upper surface of the substrate W. In addition, the double-side cleaning treatment is a treatment in which a cleaning liquid is supplied from the cleaning liquid nozzle 60 and the cleaning nozzle 105 to the upper surface and the lower surface of the substrate W. In addition, the drying treatment is a treatment in which the substrate W is dried.

[0103] In addition, Figures 6 to 9 In the figure, regarding the lower surface cleaning, the state of spraying the cleaning liquid from the cleaning nozzle 105 (open: ON) and the state of not spraying (closed: OFF) are shown. In addition, the substrate rotation speed indicates the rotation speed of the substrate W. In addition, regarding the lower surface suction, the state of suction in the cleaning nozzle 105 (open) and the state of no suction (closed) are shown. In addition, regarding the lower surface central gas, the state of blowing gas from the cleaning nozzle 105 (open) and the state of no blowing (closed) are shown. Regarding the gas blown from the cleaning nozzle 105, it flows from the radial inside to the radial outside of the substrate W in a top view. In addition, regarding the lower surface peripheral gas, the state of blowing gas from the blowing port 106 (open) and the state of no blowing (closed) are shown.

[0104] exist Figure 6 In the illustrated case, when the liquid treatment is first performed, the lower surface cleaning is turned off, the substrate rotation speed is 700 rpm, the lower surface suction is turned off, the lower surface center gas is turned on, and the lower surface peripheral gas is turned on. At this time, the lower surface center gas and the lower surface peripheral gas are turned on, so that the substrate W is held by the Bernoulli chuck and the liquid sprayed onto the upper surface of the substrate W is prevented from circling around the lower surface side of the substrate W.

[0105] Next, when performing the upper surface cleaning process, the lower surface cleaning is turned off, the substrate rotation speed is 700 rpm, the lower surface suction is turned off, the lower surface center gas is turned on, and the lower surface peripheral gas is turned on. At this time, the lower surface center gas and the lower surface peripheral gas are turned on, so that the substrate W is held by the Bernoulli chuck and the cleaning liquid sprayed onto the upper surface of the substrate W is prevented from circling around the lower surface side of the substrate W.

[0106] Next, when performing the double-side cleaning process, the lower surface cleaning is turned on, the substrate rotation speed is 300 rpm, the lower surface suction is turned off, the lower surface center gas is turned on, and the lower surface peripheral gas is turned on. At this time, the substrate W is held by the Bernoulli chuck, and the cleaning liquid and the inert gas are simultaneously supplied from the cleaning nozzle 105 to form a gas-liquid mixture, which is supplied to the lower surface of the substrate W, thereby improving the cleaning effect on the lower surface of the substrate W.

[0107] Next, when performing the upper surface cleaning process, the lower surface cleaning is turned off, the substrate rotation speed is 300 rpm, the lower surface suction is turned on, the lower surface central gas is turned off, and the lower surface peripheral gas is turned on. Here, in terms of the previous double-sided cleaning process, the cleaning liquid is sprayed from the cleaning nozzle 105, so it is possible that the cleaning liquid remains inside the cleaning nozzle 105. Therefore, in this upper surface cleaning process, suction is performed inside the cleaning nozzle 105 to remove the cleaning liquid remaining in the cleaning nozzle 105. At this time, an inert gas is blown out from the blowing port 106, so that the substrate W is held by the rotating chuck 51 (Bernoulli chuck) through the Bernoulli principle.

[0108] In a state where the substrate W is held by the Bernoulli chuck, it is preferable to keep the pressure in the space between the lower surface of the substrate W and the upper surface 102 of the plate 101 constant, and it is generally undesirable to perform suction in the cleaning nozzle 105, which may cause the pressure of the space to fluctuate. However, in this embodiment, the Bernoulli chuck is maintained (in this embodiment, the inert gas blown from the blowing port 106 is used) and suction is performed in the cleaning nozzle 105, so that even when the substrate W is held by the Bernoulli chuck, the cleaning liquid remaining in the cleaning nozzle 105 can be removed.

[0109] Furthermore, if only the cleaning liquid remaining in the cleaning nozzle 105 is removed, it is not necessary to supply the cleaning liquid to the upper surface of the substrate W. However, by supplying the cleaning liquid to the upper surface of the substrate W, it is possible to suppress particles from being attached to the upper surface of the substrate W during the period of suction in the cleaning nozzle 105. In addition, when supplying the cleaning liquid to the upper surface of the substrate W, an inert gas is blown out from the blowing port 106 in advance, thereby suppressing the cleaning liquid supplied to the upper surface of the substrate W from being bypassed to the lower surface side of the substrate W.

[0110] Next, when performing the drying process, the lower surface washing is turned off, the substrate rotation speed is 1500 rpm, the lower surface suction is turned on, the lower surface central gas is turned off, and the lower surface peripheral gas is turned on. At this time, the substrate W rotates at a high speed, so that particles attached to the substrate W can be removed. Since the substrate W rotates at a high speed, the pressure in the space between the lower surface of the substrate W and the upper surface 102 of the plate 101 decreases and becomes a negative pressure, so that the cleaning liquid remaining in the cleaning nozzle 105 is easily sucked into the space. Therefore, it is effective to perform suction in the cleaning nozzle 105. However, when the suction is performed excessively, the pressure in the above space is excessively reduced, which may cause the lower surface of the substrate W to contact the upper surface 102 of the plate 101. Therefore, the control unit 90 needs to control at least one of the rotation speed of the substrate W and the suction amount in the cleaning nozzle 105 within a range where the pressure in the above space is smaller than a predetermined pressure. At this time, by blowing out an inert gas from the blowing port 106, the substrate W is held on the rotating chuck 51 (Bernoulli chuck) by the Bernoulli principle.

[0111] exist Figure 7 In the case of the example, the chemical liquid treatment, the upper surface cleaning treatment, the double-side cleaning treatment, the upper surface cleaning treatment after the double-side cleaning treatment and Figure 6 The same situation is shown.

[0112] When drying is performed after the upper surface cleaning process, the lower surface cleaning is turned off, the substrate rotation speed is 0 rpm (ie, no rotation), the lower surface suction is turned off, the lower surface central gas is turned on, and the lower surface peripheral gas is turned off.

[0113] At this time, since the substrate W is not rotated in this process, the pressure of the space between the lower surface of the substrate W and the upper surface 102 of the plate 101 will not be reduced due to the rotation of the substrate W. Therefore, it is not necessary to perform suction in the cleaning nozzle 105. However, suction may be performed in the cleaning nozzle 105.

[0114] In addition, in this drying process, the cleaning nozzle 105 located in the center of the substrate W in a plan view blows out the inert gas, and the inert gas is not blown out from the blowing port 106. This is because the cleaning liquid remaining on the lower surface of the substrate W or the upper surface 102 of the plate 101 is pushed outward in the radial direction of the substrate W by the inert gas blown from the cleaning nozzle 105, and the Bernoulli chuck of the substrate W is released.

[0115] The substrate W held by the Bernoulli chuck is prone to bend in the center of the substrate W. Therefore, the cleaning liquid remaining in the center of the lower surface of the substrate W contacts and remains in a narrow portion between the lower surface of the substrate W and the upper surface 102 of the plate 101, and is not easily squeezed out by the inert gas blown from the cleaning nozzle 105. In addition, when the substrate W is held by the Bernoulli chuck, the pressure of the space between the lower surface of the substrate W and the upper surface 102 of the plate 101 is lower than the pressure of the space outside thereof, so the cleaning liquid remaining on the lower surface of the substrate W or the upper surface 102 of the plate 101 is also not easily squeezed out by the inert gas blown from the cleaning nozzle 105 and the blowing port 106.

[0116] Therefore, the blowing of the inert gas from the blowing outlet 106 is stopped, the Bernoulli suction cup of the substrate W is released, and the inert gas is made to flow from the radial inside to the radial outside of the substrate W from the cleaning nozzle 105 while the bending of the substrate W is relaxed, so that the cleaning liquid remaining in the central part of the substrate W can be squeezed outward toward the radial outside of the substrate W.

[0117] exist Figure 8 In the illustrated case, the chemical solution treatment, the upper surface cleaning treatment, the double-side cleaning treatment, and the upper surface cleaning treatment after the double-side cleaning treatment are Figure 6 The same situation is shown.

[0118] In addition, the drying treatment after the upper surface washing treatment (the first drying treatment) is Figure 6 In addition, the drying process after the drying process (the second drying process) is the same as Figure 7 In addition, the final drying process (the third drying process) is the same as Figure 6 The drying process shown is the same.

[0119] At this time, in the first drying process, the substrate W is rotated at high speed, so that the liquid including the processing liquid attached to the substrate W after the previous process is removed. In addition, in the second drying process in which the substrate W is not rotated, the cleaning liquid that is particularly likely to remain in the central part of the lower surface of the substrate W is squeezed out at least radially outward of the substrate W. In addition, in the third drying process, the substrate W is rotated at high speed again, so that the cleaning liquid squeezed out radially outward of the substrate W is removed. By adopting the above method, the liquid attached to the substrate W can be removed more effectively. In addition, the first drying process is not a necessary process.

[0120] exist Figure 4In the embodiment, the cleaning liquid supply pipe 109 and the gas supply pipe 107 are connected to the same cleaning nozzle 105, but they can also be connected to different blowing outlets (or nozzles). In addition, the blowing outlet connected to the cleaning liquid supply pipe 109 and the blowing outlet connected to the gas supply pipe 107 are both arranged at a position opposite to the lower surface of the substrate W.

[0121] Fig. 9 1 is a diagram showing the timing of connecting the cleaning liquid supply pipe 109 and the gas supply pipe 107 to different blow-off ports as described above. Fig. 9 In the example, the chemical treatment, the upper surface cleaning treatment, and the double-side cleaning treatment are Figure 6 The same situation is shown.

[0122] Next, when performing the upper surface cleaning process, the lower surface cleaning is turned off, the substrate rotation speed is 300 rpm, the lower surface suction is turned on, the lower surface center gas is turned on, and the lower surface peripheral gas is turned on. At this time, the cleaning liquid supply pipe 109 and the gas supply pipe 107 are connected to different blowing outlets, so that the lower surface suction and the lower surface center gas can be turned on. As a result, the inert gas can be blown out from the cleaning nozzle 105 to suppress the cleaning liquid supplied to the upper surface of the substrate W from bypassing the lower surface of the substrate W, and suction is performed in the cleaning nozzle 105, so that the cleaning liquid remaining in the cleaning nozzle 105 can be removed.

[0123] Next, when performing the drying process, the lower surface washing is turned off, the substrate rotation speed is 1500 rpm, the lower surface suction is turned on, the lower surface center gas is turned on, and the lower surface peripheral gas is turned on. At this time, the cleaning liquid supply pipe 109 and the gas supply pipe 107 are connected to different blowing outlets, so that the lower surface suction and the lower surface center gas can be turned on. As a result, the pressure in the space between the lower surface of the substrate W and the upper surface 102 of the plate 101 can be suppressed from being excessively reduced, and suction can be performed in the cleaning nozzle 105. That is, the degree of freedom of the suction amount can be increased.

[0124] <Effects of the above-described embodiments>

[0125] Next, the effects produced by the above-described embodiments are exemplified. In addition, although the effects are described in the following description according to the specific structures exemplified in the above-described embodiments, they can also be replaced with other specific structures exemplified in the specification of this application within the scope of producing the same effects. That is, sometimes for convenience, only one of the corresponding related specific structures is representatively recorded below, and the representatively recorded specific structure can also be replaced with other corresponding related specific structures.

[0126] According to the above-described embodiment, in the substrate cleaning method, a cleaning liquid (washing liquid) is supplied to the lower surface of the substrate W, which is opposite to the holding surface holding the substrate W, through the cleaning nozzle 105. In addition, after the step of supplying the cleaning liquid (washing liquid) to the lower surface of the substrate W, suction is performed in the cleaning nozzle 105 while the substrate W is held by the Bernoulli chuck. Here, the holding surface corresponds to, for example, the upper surface 102 of the plate 101. The supply of the cleaning liquid through the cleaning nozzle 105 can be performed by controlling the adjustment valve 113 of the cleaning liquid supply piping 109 by the control unit 90. In addition, suction in the cleaning nozzle 105 can be performed by controlling the adjustment valve 111 of the gas supply piping 107 and the adjustment valve 112 of the gas supply piping 108 by the control unit 90.

[0127] According to this structure, when the substrate W is held by the Bernoulli chuck, it is possible to suppress the cleaning liquid (washing liquid) from remaining in the cleaning nozzle 105 located on the lower surface of the substrate W. Therefore, after the step of spraying the cleaning liquid from the cleaning nozzle 105, for example, even in the case of a drying step, it is possible to suppress a malfunction caused by the cleaning liquid remaining in the cleaning nozzle 105.

[0128] Furthermore, the order in which each process is executed may be changed without particular limitation.

[0129] In addition, when other structures exemplified in the specification of the present application are appropriately added to the above-mentioned structure, that is, when other structures not mentioned as the above-mentioned structure in the specification of the present application are appropriately added, the same effect can be produced.

[0130] In addition, according to the above-described embodiment, in the substrate cleaning method, a chemical liquid is supplied to the upper surface of the substrate W before the process of supplying a cleaning liquid (washing liquid) to the lower surface of the substrate W. And, during the process of supplying the chemical liquid and the process of supplying the cleaning liquid, a gas is supplied to the lower surface of the substrate W via a gas nozzle while the substrate W is held by the Bernoulli suction cup. Here, the gas nozzle corresponds to the washing nozzle 105 and the like in this embodiment. In addition, the gas supplied via the washing nozzle 105 flows from the radial inside to the radial outside of the substrate W in a top view. According to this structure, since the gas in the center of the lower surface is open, it is possible to prevent the chemical liquid and the washing liquid sprayed to the upper surface of the substrate W from bypassing the lower surface side of the substrate W.

[0131] In addition, according to the above-described embodiment, the gas nozzle is a common nozzle with the cleaning nozzle 105. According to this structure, the cleaning liquid and the inert gas are simultaneously supplied from the cleaning nozzle 105 to form a gas-liquid mixture, and the gas-liquid mixture is supplied to the lower surface of the substrate W, thereby improving the cleaning effect of the lower surface of the substrate W. In addition, compared with the case where the nozzle for supplying the cleaning liquid to the lower surface of the substrate W and the nozzle for supplying the inert gas to the lower surface of the substrate W are separately provided, the device structure can be reduced.

[0132] In addition, according to the above-described embodiment, in the substrate cleaning method, during the process of performing suction in the cleaning nozzle 105, the cleaning liquid (washing liquid) is supplied to the upper surface of the substrate W. According to this structure, by supplying the cleaning liquid (washing liquid) to the upper surface of the substrate W, it is possible to suppress the adhesion of particles and the like to the upper surface of the substrate W during the suction in the cleaning nozzle 105.

[0133] In addition, according to the above-described embodiment, in the substrate cleaning method, during the process of supplying the cleaning liquid (cleaning liquid) to the lower surface of the substrate W, the cleaning liquid (cleaning liquid) is supplied to the upper surface of the substrate W. According to this structure, particles and the like attached in the previous process can also be removed from the upper surface of the substrate W.

[0134] In addition, according to the above-described embodiment, in the substrate cleaning method, the substrate W is dried after the step of suctioning the inside of the cleaning nozzle 105. According to this structure, the cleaning liquid (washing liquid) remaining in the cleaning nozzle 105 in the previous step can be sucked out by the negative pressure of the space between the lower surface of the substrate W and the upper surface 102 of the plate 101 in the drying step, thereby preventing malfunction.

[0135] In addition, according to the above-described embodiment, the suction in the cleaning nozzle 105 can also be performed in the process of drying the substrate W. In addition, in the process of drying the substrate W, at least one of the rotation speed of the substrate W and the suction amount in the cleaning nozzle 105 is controlled, so that the pressure in the space between the substrate W and the upper surface 102 can be adjusted to a predetermined range. According to this structure, the higher the rotation speed of the substrate W and the greater the suction amount in the cleaning nozzle 105, the lower the pressure in the space between the lower surface of the substrate W and the upper surface 102 of the plate 101. Therefore, by controlling both, the drying process can be performed within a range where the lower surface of the substrate W does not contact the upper surface 102 of the plate 101.

[0136] In addition, according to the above-described embodiment, the process of drying the substrate W is performed without rotating the substrate W in a state where the substrate W is not held by the Bernoulli chuck. Furthermore, in the substrate cleaning method, during the process of drying the substrate W, a gas is supplied to the lower surface of the substrate W. Here, the supplied gas flows from the radial inner side to the radial outer side of the substrate W in a top view. According to this structure, the blowing of the inert gas from the blowing port 106 is stopped, and the inert gas is blown out from the cleaning nozzle 105 in a state where the Bernoulli chuck of the substrate W is released, so that the cleaning liquid remaining in the central part of the substrate W can be squeezed outward in the radial direction of the substrate W.

[0137] In addition, according to the above-described embodiment, the process of drying the substrate W is performed multiple times. Furthermore, regarding the process of drying the substrate W, the process is performed without rotating the substrate W in a state where the substrate W is not held by the Bernoulli chuck, and then the process is performed by rotating the substrate W in a state where the substrate W is held by the Bernoulli chuck. Furthermore, in the substrate cleaning method, during the process of drying without rotating the substrate W, gas is supplied to the lower surface of the substrate W. Here, the supplied gas flows from the radial inside to the radial outside of the substrate W in a plan view. According to this structure, the cleaning liquid squeezed out to the radial outside of the substrate W in the drying process where the substrate W is not rotated can be reliably removed in the subsequent drying process where the substrate W is rotated.

[0138] <Regarding Modifications of the Embodiments Described Above>

[0139] In the above-described embodiments, the material, dimensions, shape, relative arrangement relationship, or implementation conditions of each component are sometimes described, but these are merely illustrative in all respects and are not limiting.

[0140] Therefore, various modifications and equivalents not shown in the examples are also within the technical scope disclosed in the present specification, including, for example, modifications, additions, or omissions of at least one structural element.

[0141] In the above-described embodiments, when a material name or the like is described without particular designation, the material also includes other additives, such as an alloy, unless there is a contradiction.

Claims

1. A substrate cleaning method for cleaning a substrate held by a Bernoulli chuck, characterized in that: have: A step of supplying a cleaning liquid to a surface of the substrate that is opposite to a holding surface holding the substrate, that is, the lower surface of the substrate, through a cleaning nozzle that is opposite to a central portion of the lower surface of the substrate; After the step of supplying the cleaning liquid, a step of performing suction on the cleaning nozzle facing the lower surface of the substrate while the substrate is held by a Bernoulli effect caused by gas ejected from a blowing port facing the peripheral edge of the lower surface of the substrate; and After the step of suctioning the inside of the cleaning nozzle, a step of drying the substrate is performed.

2. The substrate cleaning method according to claim 1, characterized in that: Also available: A step of supplying the cleaning liquid to the upper surface of the substrate during the step of suctioning the inside of the cleaning nozzle.

3. The substrate cleaning method according to claim 1 or 2, characterized in that: Also available: A step of supplying the cleaning liquid to the upper surface of the substrate during the step of supplying the cleaning liquid to the lower surface of the substrate.

4. The substrate cleaning method according to claim 1, characterized in that: In the process of drying the substrate, suction is also performed in the cleaning nozzle. In the step of drying the substrate, at least one of a rotation speed of the substrate and a suction amount in the cleaning nozzle is controlled so that a pressure in a space between the substrate and the holding surface is adjusted to be within a predetermined range.

5. The substrate cleaning method according to claim 1, characterized in that: The step of drying the substrate without rotating the substrate is performed in a state where the substrate is not held by the Bernoulli chuck. The method further comprises supplying gas to the lower surface of the substrate during the step of drying the substrate. The supplied gas flows from the radially inner side to the radially outer side of the substrate in a plan view.

6. The substrate cleaning method according to claim 1, characterized in that: performing a plurality of steps of drying the substrate, The step of drying the substrate is performed by not rotating the substrate while the substrate is not held by the Bernoulli chuck, and then rotating the substrate while the substrate is held by the Bernoulli chuck. The method further comprises the step of supplying gas to the lower surface of the substrate during the step of drying the substrate without rotating the substrate. The supplied gas flows from the radially inner side to the radially outer side of the substrate in a plan view.

7. A substrate cleaning device for cleaning a substrate held by a Bernoulli chuck. The substrate cleaning device is characterized by comprising: a unit for supplying a cleaning liquid to a lower surface of the substrate which is opposite to a holding surface holding the substrate, through a cleaning nozzle facing the lower surface of the substrate; and After the cleaning liquid is supplied, a unit for sucking the inside of the cleaning nozzle opposite to the lower surface of the substrate while the substrate is held by the Bernoulli effect caused by the gas ejected from the blowing outlet opposite to the lower surface of the substrate, During the step of supplying the cleaning liquid to the lower surface of the substrate through the cleaning nozzle, gas is supplied to the lower surface of the substrate through the cleaning nozzle while the substrate is held by the Bernoulli chuck.

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