Photoresist removal method and photoresist stripping machine

Abstract

The present embodiment provides a photoresist removal method and a photoresist stripper, which relate to the field of semiconductor technology. The photoresist stripper includes a photoresist stripper body, an air intake pipe, and a plasma forming device. The plasma forming device is arranged in a reaction chamber of the photoresist stripper body, and the plasma forming device has a plasma forming chamber connected to the reaction chamber, and the plasma forming device is used to form plasma. The air intake pipe is connected to the plasma forming chamber to transport gas to the plasma forming chamber. The method includes feeding a silicon wafer coated with glue into the reaction chamber; controlling the plasma forming device to operate at a first preset radio frequency power, and the air intake pipe introduces a first preset amount of oxygen and a second preset amount of nitrogen into the plasma forming chamber; and operating the plasma forming device at a second preset radio frequency power, and the air intake pipe introduces a third preset amount of oxygen into the plasma forming chamber so that the plasma forming device forms plasma to remove the glue from the silicon wafer coated with glue.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, in particular to a photoresist removal method and a photoresist stripping machine. Background Art

[0002] In the semiconductor manufacturing process, it is usually necessary to deposit an electrolyte material and form a photoresist pattern on the surface of the semiconductor device. After that, the electrolyte material is etched and the photoresist formed on the semiconductor surface is selectively removed.

[0003] Currently, there are two common methods for removing photoresist from semiconductor surfaces: dry etching and wet etching. Dry etching involves exposing the semiconductor surface to a gaseous plasma, which physically or chemically reacts with the photoresist, removing the photoresist from the semiconductor surface. Dry etching is primarily used for etching submicron devices. Wet etching, on the other hand, involves chemically removing photoresist from the semiconductor surface using liquid chemicals such as acids, bases, and solvents. Wet etching is generally only used for etching larger devices.

[0004] Existing pure oxygen desmearing machines used for dry etching typically undergo a pre-matching process to extend the life of the equipment. This allows the machine to operate at low power before entering operational mode. However, when the desmearing machine is operating in this pre-matched state, the plasma glow generated is insufficiently bright, making it undetectable by the sensor. This can lead to false plasma alarms and negatively impact production efficiency. Summary of the Invention

[0005] The objects of the present invention include, for example, providing a photoresist removal method and a photoresist stripper, which can reduce plasma false alarms without affecting the photoresist stripping performance.

[0006] The embodiments of the present invention can be implemented as follows:

[0007] In a first aspect, the present invention provides a photoresist removal method, which is applied to a photoresist stripping machine;

[0008] The degumming machine comprises a degumming machine body, an air inlet pipe and a plasma forming device;

[0009] The degumming machine body has a reaction chamber;

[0010] The plasma forming device is arranged on the degumming machine body, and the plasma forming device has a plasma forming chamber, the plasma forming chamber is communicated with the reaction chamber, and the plasma forming device is used to form plasma;

[0011] The air inlet pipe is in communication with the plasma forming chamber, and the air inlet pipe is used to transport gas to the plasma forming chamber;

[0012] The photoresist removal method comprises:

[0013] The silicon wafer coated with glue is sent into the reaction chamber;

[0014] controlling the plasma forming device to operate at a first preset radio frequency power, and controlling the gas inlet conduit to introduce a first preset amount of oxygen and a second preset amount of nitrogen into the plasma forming chamber;

[0015] controlling the plasma forming device to operate at a second preset radio frequency power, and controlling the air inlet pipe to introduce a third preset amount of oxygen into the plasma forming chamber so that the plasma forming device forms plasma to remove the glue from the glue-coated silicon wafer;

[0016] The second preset radio frequency power is greater than the first radio frequency power, and the third preset amount is greater than the first preset amount.

[0017] In an optional embodiment, the air inlet pipeline includes a main pipeline, a first branch pipeline, a second branch pipeline, a first control valve and a second control valve; the main pipeline is provided on the degumming machine body, and the main pipeline is communicated with the plasma forming chamber, one end of the first branch pipeline and the second branch pipeline are both communicated with the main pipeline, the first control valve is provided on the first branch pipeline, and the other end of the first branch pipeline is used to connect to an oxygen gas source, the second control valve is provided on the second branch pipeline, and the other end of the second branch pipeline is used to connect to a nitrogen gas source, the first metering device is used to detect the amount of oxygen flowing through the first pipeline, and the second metering device is used to detect the amount of nitrogen flowing through the second pipeline;

[0018] The step of controlling the air inlet pipe to introduce a first preset amount of oxygen and a second preset amount of nitrogen into the plasma forming chamber comprises:

[0019] controlling the first control valve and the second control valve to open;

[0020] obtaining an amount of oxygen flowing through the first branch pipe and obtaining an amount of nitrogen flowing through the second branch pipe;

[0021] When the amount of oxygen flowing through the first branch pipe is equal to the first preset amount, the first control valve is controlled to be closed; when the amount of nitrogen flowing through the second branch pipe is equal to the second preset amount, the second control valve is controlled to be closed.

[0022] In an optional embodiment, the degumming machine further includes a heating device, and the heating device is arranged in the reaction chamber;

[0023] The step of feeding the silicon wafer coated with glue into the reaction chamber comprises:

[0024] controlling the heating device to heat the reaction chamber;

[0025] Determining whether the temperature of the reaction chamber reaches a preset temperature;

[0026] When the reaction temperature reaches the preset temperature, the silicon wafer coated with glue is sent into the reaction chamber.

[0027] In an optional embodiment, the degumming machine further comprises a pressure control valve, the pressure control valve being mounted on the degumming machine body and being in communication with the reaction chamber;

[0028] Between the step of feeding the silicon wafer coated with the photoresist into the reaction chamber and the step of controlling the plasma forming device to operate at a first preset radio frequency power and controlling the air inlet pipe to introduce a first preset amount of oxygen and a second preset amount of nitrogen into the plasma forming chamber, the photoresist removal method further comprises:

[0029] The gas inlet pipe is controlled to introduce a fourth preset amount of oxygen into the plasma forming chamber, and the pressure control valve is controlled to operate according to the actual pressure of the reaction chamber so that the reaction chamber is maintained at the first preset pressure.

[0030] In an optional embodiment, the step of controlling the gas inlet pipe to introduce a fourth preset amount of oxygen into the plasma forming chamber, and controlling the pressure control valve to operate so that the reaction chamber is maintained at the first preset pressure includes:

[0031] continuously obtaining the actual pressure of the reaction chamber;

[0032] controlling the air inlet pipe to introduce the fourth preset amount of oxygen into the plasma forming chamber;

[0033] Determining whether the actual pressure of the reaction chamber is greater than the first preset pressure;

[0034] If the pressure of the reaction chamber is greater than the first preset pressure, the pressure control valve is controlled to open; if the pressure of the reaction chamber is less than or equal to the first preset pressure, the pressure control valve is controlled to close.

[0035] In an optional embodiment, after the steps of controlling the gas inlet pipe to introduce a fourth preset amount of oxygen into the plasma forming chamber and controlling the pressure control valve to operate so that the reaction chamber maintains the first preset pressure, the photoresist removal method further comprises:

[0036] The pressure control valve is controlled to operate according to the actual pressure of the reaction chamber to reduce the pressure of the reaction chamber, and the air inlet pipe is controlled to pass a fifth preset amount of oxygen into the plasma formation chamber, so that the pressure of the reaction chamber is maintained at a second preset pressure, wherein the second preset pressure is less than the first preset pressure.

[0037] In an optional embodiment, the step of controlling the plasma forming device to operate at a first preset radio frequency power and controlling the gas inlet pipe to introduce a first preset amount of oxygen and a second preset amount of nitrogen into the plasma forming chamber includes:

[0038] After the pressure of the reaction chamber reaches the second preset pressure, controlling the plasma forming device to operate at the first preset radio frequency power;

[0039] Controlling the inlet pipe to the plasma forming chamber into the first preset amount of oxygen and the second preset amount of nitrogen, the second preset amount of the value range is 5% -10%;

[0040] The action of the pressure control valve is controlled according to the actual pressure of the reaction chamber, so that the pressure of the reaction chamber is continuously maintained at the second preset pressure.

[0041] In a second aspect, the present application provides a debonding machine, comprising a debonding machine body, an air intake pipe, a plasma forming device, and a controller;

[0042] The degumming machine body has a reaction chamber;

[0043] The plasma forming device is arranged on the degumming machine body, and the plasma forming device has a plasma forming chamber, the plasma forming chamber is communicated with the reaction chamber, and the plasma forming device is used to form plasma;

[0044] The air inlet pipe is in communication with the plasma forming chamber, and the air inlet pipe is used to transport oxygen and nitrogen to the plasma forming chamber;

[0045] The controller is connected to both the air inlet pipe and the plasma forming device;

[0046] The controller is used to control the plasma forming device to operate at a first preset radio frequency power, and to control the air inlet pipe to introduce a first preset amount of oxygen and a second preset amount of nitrogen into the plasma forming chamber;

[0047] The controller is further configured to control the plasma forming device to operate at a second preset radio frequency power, and to control an air inlet pipe to introduce a third preset amount of oxygen into the plasma forming chamber so that the plasma forming device forms plasma to remove the glue from the glue-coated silicon wafer, wherein the second preset radio frequency power is greater than the first preset radio frequency power, and the third preset amount is greater than the first preset amount.

[0048] In an optional embodiment, the air intake conduit includes a first branch conduit of the main conduit, a second branch conduit, a first control valve, a second control valve, a first metering device, and a second metering device;

[0049] The main pipeline is provided on the degumming machine body and is in communication with the plasma forming chamber. One ends of the first branch pipeline and the second branch pipeline are both in communication with the main pipeline. The first control valve and the first metering device are both provided on the first branch pipeline. The other end of the first branch pipeline is used to connect to an oxygen gas source. The second control valve and the second metering device are both provided on the second branch pipeline. The other end of the second branch pipeline is used to connect to a nitrogen gas source. The first metering device is used to detect the amount of oxygen flowing through the first pipeline, and the second metering device is used to detect the amount of nitrogen flowing through the second pipeline.

[0050] The controller is connected to the first control valve, the second control valve, the first metering device and the second metering device respectively. The controller is also used to control the first control valve and the second control valve to open, and to control the first control valve to close when the amount of oxygen flowing through the first branch pipeline is equal to a first preset amount, and to control the second control valve to close when the amount of nitrogen flowing through the second branch pipeline is equal to a second preset amount.

[0051] In an optional embodiment, the degumming machine further includes a pressure control valve and a pressure measuring device, wherein the pressure control valve is mounted on the degumming machine body and is in communication with the reaction chamber, and the pressure measuring device is mounted on the degumming machine body and is used to obtain the actual pressure of the reaction chamber;

[0052] The controller is connected to both the pressure control valve and the pressure measuring device. The controller is also used to control the air inlet pipe to introduce a fourth preset amount of oxygen into the plasma forming chamber and to control the action of the pressure control valve according to the actual pressure of the reaction chamber, so that the reaction chamber is maintained at the first preset pressure.

[0053] The beneficial effects of a photoresist removal method and a photoresist stripping machine provided by an embodiment of the present invention include:

[0054] The present application controls the plasma forming device to operate at a first preset radio frequency power in a pre-matched state, and controls the air inlet pipe to introduce a first preset amount of oxygen and a second preset amount of nitrogen into the plasma forming chamber. By introducing nitrogen into the plasma forming chamber, the brightness of the glow generated by the plasma can be increased, thereby making it easier for the sensor to detect it, thereby reducing false alarms. During use, due to the introduction of nitrogen, the nitrogen will not affect the performance of the debonding process. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0056] Figure 1 A schematic structural diagram of a degumming machine provided in an embodiment of the present invention;

[0057] Figure 2 A schematic flow chart of a photoresist removal method provided in an embodiment of the invention;

[0058] Figure 3 A schematic flow chart of the sub-steps of step S1 of the photoresist removal method provided in an embodiment of the invention;

[0059] Figure 4 A schematic flow chart of the sub-steps of step Sa of the photoresist removal method provided in an embodiment of the invention;

[0060] Figure 5 A schematic flow chart of the sub-steps of step S2 of the photoresist removal method provided in an embodiment of the invention;

[0061] Figure 6 A schematic flow chart of the sub-steps of step S22 of the photoresist removal method provided in an embodiment of the invention;

[0062] Figure 7 A comparison chart of the photoresist removal effects when nitrogen is not passed into the reaction chamber and when nitrogen is passed into the reaction chamber in the photoresist removal method provided by an embodiment of the invention;

[0063] Figure 8 A comparison chart of the alarm times when nitrogen is not supplied to the reaction chamber and when nitrogen is supplied to the reaction chamber in the photoresist removal method provided in an embodiment of the invention.

[0064] Icons: 100-degumming machine; 110-degumming machine body; 111-reaction chamber; 130-air inlet pipe; 131-main pipe; 132-first branch pipe; 133-second branch pipe; 134-first control valve; 135-second control valve; 136-first metering device; 137-second metering device; 150-plasma forming device; 151-plasma forming chamber; 170-heating device; 181-pressure control valve; 182-pressure measuring device. DETAILED DESCRIPTION

[0065] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0066] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort shall fall within the scope of protection of the present invention.

[0067] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0068] In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the accompanying drawings, or is the orientation or position relationship in which the product of the invention is usually placed when in use. It is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be understood as a limitation on the present invention.

[0069] In addition, the terms "first", "second", etc., if used, are merely used to distinguish and describe, and should not be understood as indicating or implying relative importance.

[0070] It should be noted that, in the absence of conflict, the features in the embodiments of the present invention may be combined with each other.

[0071] Please refer to Figure 1This embodiment provides a photoresist stripper for removing photoresist from silicon wafers. The photoresist stripper 100 includes a photoresist stripper body 110, an air intake pipe 130, and a plasma forming device 150. The photoresist stripper body 110 has a reaction chamber 111; the plasma forming device 150 is disposed on the photoresist stripper body 110, and the plasma forming device 150 has a plasma forming chamber 151, which is connected to the reaction chamber 111, and the plasma forming device 150 is used to form plasma; the air intake pipe 130 is connected to the plasma forming chamber 151, and the air intake pipe 130 is used to transport gas to the plasma forming chamber.

[0072] The degumming machine 100 provided in this embodiment is provided with an air intake pipe 130, and the air intake pipe 130 can be used to ventilate oxygen and nitrogen into the plasma forming chamber 151, so that the glow brightness of the plasma can be enhanced by the nitrogen introduced, thereby avoiding false alarms of the degumming machine 100.

[0073] It should be noted that the plasma forming device 150 includes parts such as coils, which can ionize the gas introduced into the plasma forming chamber 151, thereby forming plasma in the reaction chamber 111 to remove the glue on the silicon wafer.

[0074] Please continue to refer to Figure 1 In this embodiment, the air inlet pipe 130 includes a main pipe 131, a first branch pipe 132, a second branch pipe 133, a first control valve 134, a second control valve 135, a first metering device 136, and a second metering device 137. The main pipe 131 is disposed in the degumming machine body 110 and communicates with the plasma formation chamber 151. One end of each of the first branch pipe 132 and the second branch pipe 133 is communicated with the main pipe 131. The first control valve 134 and the first metering device 136 are both disposed in the first branch pipe 132. The other end of the first branch pipe 132 is connected to an oxygen gas source. The second control valve 135 and the second metering device 137 are both disposed in the second branch pipe 133. The other end of the second branch pipe 133 is connected to a nitrogen gas source. The first metering device 136 is used to detect the amount of oxygen flowing through the first pipe, and the second metering device 137 is used to detect the amount of nitrogen flowing through the second pipe.

[0075] In this embodiment, by providing a first branch pipe 132 for conveying oxygen and a second branch pipe 133 for conveying nitrogen, and connecting both the first branch pipe 132 and the second branch pipe 133 to the main pipe 131, oxygen and nitrogen can be better conveyed into the plasma formation chamber 151. The first control valve 134, the second control valve 135, the first metering device 136, and the second metering device 137 can precisely control the timing and amount of oxygen and nitrogen introduced.

[0076] In this embodiment, the degumming machine 100 also includes a heating device 170, and the heating device 170 is arranged in the reaction chamber 111; by setting the heating device 170, the reaction chamber can be heated so that the temperature of the reaction chamber 111 reaches the preset temperature for degumming, which can better remove the photoresist.

[0077] In this embodiment, the heating device 170 includes an electronic heating plate and a temperature sensor, both of which are disposed within the reaction chamber 111. The electronic heating plate is used to heat the reaction chamber 111, and the temperature sensor is used to detect the temperature of the reaction chamber 111. In other embodiments of the present application, the heating device 170 may also be other heating devices, such as a heating tube. When the heating device 170 is configured as an electronic heating plate, the silicon wafer coated with glue can be placed on the electronic heating plate during debonding.

[0078] In this embodiment, the degumming machine 100 also includes a pressure control valve 181 and a pressure measuring device 182. The pressure control valve 181 is installed on the degumming machine body 110, and the pressure control valve 181 is connected to the reaction chamber 111. The pressure measuring device 182 is installed on the degumming machine body 110, and the pressure measuring device 182 is used to obtain the actual pressure of the reaction chamber 111.

[0079] Please refer to Figure 1 and Figure 2 With respect to the photoresist stripping machine 100 provided in the above embodiment, this embodiment further provides a photoresist removal method. The photoresist removal method includes:

[0080] S1, put the silicon wafer coated with glue into the reaction chamber 111;

[0081] S2, controlling the plasma forming device 150 to operate at a first preset radio frequency power, and controlling the air inlet pipe 130 to introduce a first preset amount of oxygen and a second preset amount of nitrogen into the plasma forming chamber 151;

[0082] S3, controlling the plasma forming device 150 to operate at a second preset radio frequency power, and controlling the air inlet pipe 130 to introduce a third preset amount of oxygen into the plasma forming chamber 151 so that the plasma forming device 150 forms plasma to remove the glue from the glue-coated silicon wafer;

[0083] The second preset radio frequency power is greater than the first preset radio frequency power, and the third preset amount is greater than the first preset amount.

[0084] In this embodiment, during the pre-matched ignition process, the plasma forming device 150 is controlled to operate at a first preset RF power, and the air inlet conduit 130 is controlled to introduce a first preset amount of oxygen and a second preset amount of nitrogen into the plasma forming chamber 151. By introducing nitrogen into the plasma forming chamber 151, the brightness of the glow generated by the plasma can be increased, thereby enabling better detection by the sensor and reducing false alarms. During use, the introduced nitrogen does not affect the performance of the debonding process. The second preset RF power is set to be greater than the first RF power, allowing the plasma forming device 150 to transition through the first preset RF frequency before entering the second RF operating power for normal operation, thereby increasing the service life of the plasma forming device 150.

[0085] It should be noted that step S2 is the ignition process step of the degumming machine 100, which is used to transition the start-up of the plasma forming device 150 and enable the reaction chamber to reach the degumming conditions. Setting this ignition step can improve the success rate of starting the plasma forming device 150 at the second preset power.

[0086] In this embodiment, the first preset RF power is 700W, the first preset amount is 800sccm, the second preset amount is 80sccm, the second preset RF power is 900W, and the third preset amount is 1500sccm. Of course, in other embodiments of the present application, the first preset RF power, the first preset amount, the second preset amount, the second preset RF power, and the third preset amount can be set according to the specific operating model and operating state of the adhesive stripping machine 100. It is only necessary to ensure that the second preset RF power is greater than the first RF power and the third preset amount is greater than the first preset amount.

[0087] Please refer to Figure 1 and Figure 3 In this embodiment, step S1 includes the following sub-steps:

[0088] S11, controlling the heating device 170 to heat the reaction chamber 111;

[0089] S12, determining whether the temperature of the reaction chamber 111 reaches a preset temperature;

[0090] S13 , when the reaction temperature reaches the preset temperature, the silicon wafer coated with the glue is sent into the reaction chamber 111 .

[0091] The above steps can better control the temperature of the reaction chamber 111. Of course, in order to achieve automatic temperature control of the reaction chamber 111, the adhesive stripping machine 100 should also include a temperature sensor or other device to detect the temperature of the reaction chamber 111. By comparing and determining the actual temperature of the reaction chamber 111 with the preset temperature, the temperature of the reaction chamber 111 can be accurately and automatically controlled.

[0092] In this embodiment, between step S1 and step S2, the photoresist removal method further includes:

[0093] Sa. Control the gas inlet pipe to introduce a fourth preset amount of oxygen into the plasma forming chamber 151, and control the pressure control valve 181 to operate according to the actual pressure of the reaction chamber 111 so that the reaction chamber 111 is maintained at the first preset pressure.

[0094] In this embodiment, a fourth preset amount of oxygen is introduced into the plasma forming chamber 151 and the reaction chamber 111 is maintained at the first preset pressure by controlling the pressure. This can balance the temperature of the reaction chamber 111 and allow the silicon wafer coated with glue to be heated evenly and reach the preset temperature.

[0095] In this embodiment, the fourth preset amount is 4000 sccm.

[0096] Please refer to Figure 1 and Figure 4 In this embodiment, step Sa includes the following sub-steps:

[0097] Sa1, continuously obtaining the actual pressure of the reaction chamber 111;

[0098] Sa2, controlling the air inlet pipe to introduce the fourth preset amount of oxygen into the plasma forming chamber 151;

[0099] Sa3, determining whether the actual pressure of the reaction chamber 111 is greater than the first preset pressure;

[0100] Sa4. If the pressure of the reaction chamber 111 is greater than the first preset pressure, control the pressure control valve 181 to open;

[0101] Sa5. If the pressure of the reaction chamber 111 is less than or equal to the first preset pressure, control the pressure control valve 181 to close.

[0102] In this embodiment, the following steps are further included between step Sa and step S2:

[0103] Sb. Controlling the operation of the pressure control valve 181 according to the actual pressure of the reaction chamber 111 to reduce the pressure of the reaction chamber 111, and controlling the air inlet pipe 130 to introduce a fifth preset amount of oxygen into the plasma forming chamber 151, and maintaining the pressure of the reaction chamber 111 at a second preset pressure, wherein the second preset pressure is lower than the first preset pressure.

[0104] This step can stabilize the environment of the reaction chamber 111 and keep the environment of the reaction chamber 111 at the second preset pressure.

[0105] In this embodiment, the first preset pressure is 4T, the second preset pressure is 1.1T, and the fifth preset amount is 800 sccm. Of course, in other embodiments of the present application, the first preset pressure, the second preset pressure, and the fifth preset amount can be set according to the specific model of the degumming machine 100.

[0106] Please refer to Figure 1 and Figure 5 In this embodiment, step S2 includes the following sub-steps:

[0107] S21, after the pressure of the reaction chamber 111 reaches the second preset pressure, controlling the plasma forming device 150 to operate at the first preset radio frequency power;

[0108] S22, control the inlet pipe 130 to the plasma forming chamber 151 into the first preset amount of oxygen and the second preset amount of nitrogen, the second preset amount is in the range of 5% -10%;

[0109] S23 , controlling the pressure control valve 181 to operate according to the actual pressure of the reaction chamber 111 , so that the pressure of the reaction chamber 111 is continuously maintained at the second preset pressure.

[0110] In this embodiment, the pressure of the reaction chamber 111 can be always maintained at the second preset pressure through the above steps, so that the pressure of the reaction chamber 111 can be accurately configured to the working state in advance.

[0111] Please refer to Figure 1 and Figure 6 In this embodiment, sub-step S22 includes the following sub-steps:

[0112] S221, controlling the first control valve 134 and the second control valve 135 to open;

[0113] S222, obtaining the amount of oxygen flowing through the first branch pipe 132 and the amount of nitrogen flowing through the second branch pipe 133;

[0114] S223. When the amount of oxygen flowing through the first branch pipe 132 is equal to the first preset amount, control the first control valve 134 to close; when the amount of nitrogen flowing through the second branch pipe 133 is equal to the second preset amount, control the second control valve 135 to close.

[0115] Oxygen and nitrogen can be introduced into the plasma formation chamber by controlling the opening of the first control valve 134 and the second control valve 135. The amounts of oxygen and nitrogen introduced into the plasma formation chamber 151 can be precisely controlled by obtaining the amount of oxygen flowing through the first branch pipe 132 and the amount of nitrogen flowing through the second branch pipe 133, and controlling the first control valve 134 to close when the amount of oxygen flowing through the first branch pipe 132 equals the first preset amount, and controlling the second control valve 135 to close when the amount of nitrogen flowing through the second branch pipe 133 equals the second preset amount.

[0116] In this embodiment, the photoresist stripping machine 100 further includes a controller (not shown). The controller is connected to the first control valve 134, the second control valve 135, the first metering device 136, the second metering device 137, the heating device 170, the pressure control valve 181, the plasma formation device 150, and other sensors and actuators for detection. Other sensors and actuators for detection may include a pressure sensor for detecting the pressure in the reaction chamber 111, an illumination sensor for detecting the brightness of the plasma, an alarm, and the like. The controller is configured to execute steps S1, S2, S3, Sa, Sb, and their sub-steps in the above-described photoresist removal method.

[0117] It should be noted that when the light sensor sends the detected plasma brightness to the controller, the controller compares the actual value with the preset threshold. When the actual value is less than the preset threshold, the controller can control the alarm to sound an alarm and can also control the degumming machine 100 to stop degumming or adjust parameters.

[0118] In this embodiment, the controller includes a memory and a processor, and the memory and processor are electrically connected to each other directly or indirectly to enable data transmission or interaction. For example, these components can be electrically connected to each other via one or more communication buses or signal lines. Steps S1, S2, S3, Sa, Sb, and their substeps in the photoresist removal method can be stored in the memory in the form of a software program or firmware, or as software function modules embedded in the server's operating system (OS). The processor is configured to execute the executable program stored in the memory.

[0119] The memory is used to store the program, and the processor executes the program after receiving the execution instruction.

[0120] The memory may be, but is not limited to, random access memory (RAM), read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), etc.

[0121] The processor may be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it may also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA), or other programmable logic device, a discrete gate or transistor logic device, or a discrete hardware component. It may implement or execute the various methods, steps, and logic block diagrams disclosed in the embodiments of the present invention. A general-purpose processor may be a microprocessor. The processor may also be any conventional processor, etc.

[0122] Please refer to Figure 7 , Figure 7 The second figure a is a diagram showing the effect of removing the adhesive by not introducing nitrogen into the reaction chamber 111. Figure 7 The second figure (b) shows the effect of desmearing by introducing nitrogen into the reaction chamber 111. From the above two figures, it can be seen that the difference in desmearing rate and uniformity is not much, the difference in desmearing rate is within 100nm / min, and the uniformity is about 5%.

[0123] Please refer to Figure 8 , Figure 8 The figure a in the middle shows the number of alarms when degumming is performed without introducing nitrogen into the reaction chamber 111. Figure 8Figure b shows the number of alarms for debonding using nitrogen gas introduced into reaction chamber 111. The alarm counts in both figures clearly show that introducing nitrogen gas significantly reduces the number of alarms, resulting in a more stable curve. Furthermore, adding 5% to 10% N₂ in step S2 (ignition step) significantly reduces the number of false alarms in the debonding machine. Before N₂ was introduced, the debonding machine displayed five alarms in a test of 1,000 silicon wafers. After introducing N₂, the debonding machine displayed no alarms in a test of 1,000 silicon wafers, and process performance was not degraded.

[0124] In summary, the photoresist removal method and the photoresist stripping machine 100 provided by the embodiment of the present invention have the following beneficial effects:

[0125] The present application controls the plasma forming device 150 to operate at a first preset radio frequency power in a pre-matched state, and controls the air inlet duct 130 to introduce a first preset amount of oxygen and a second preset amount of nitrogen into the plasma forming chamber 151. By introducing nitrogen into the plasma forming chamber 151, the brightness of the glow generated by the plasma can be increased, thereby allowing the sensor to better detect it, thereby reducing false alarms. During use, the nitrogen introduced does not affect the performance of the debonding process.

[0126] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A method for removing photoresist, characterized in that: The photoresist removal method is applied to a photoresist stripping machine; The degumming machine comprises a degumming machine body, an air inlet pipe and a plasma forming device; The degumming machine body has a reaction chamber; The plasma forming device is arranged on the degumming machine body, and the plasma forming device has a plasma forming chamber, the plasma forming chamber is communicated with the reaction chamber, and the plasma forming device is used to form plasma; The air inlet pipe is in communication with the plasma forming chamber, and the air inlet pipe is used to transport gas to the plasma forming chamber; The photoresist removal method comprises: The silicon wafer coated with glue is sent into the reaction chamber; controlling the plasma forming device to operate at a first preset radio frequency power, and controlling the gas inlet conduit to introduce a first preset amount of oxygen and a second preset amount of nitrogen into the plasma forming chamber; controlling the plasma forming device to operate at a second preset radio frequency power, and controlling the air inlet pipe to introduce a third preset amount of oxygen into the plasma forming chamber so that the plasma forming device forms plasma to remove the glue from the glue-coated silicon wafer; The second preset radio frequency power is greater than the first preset radio frequency power, the third preset amount is greater than the first preset amount, and the value range of the second preset amount is 5%-10%.

2. A photoresist removal method according to claim 1, characterized in that: The air intake pipe includes a main pipe, a first branch pipe, a second branch pipe, a first control valve and a second control valve; The main pipeline is provided on the degumming machine body and is in communication with the plasma forming chamber. One end of each of the first branch pipeline and the second branch pipeline is in communication with the main pipeline. The first control valve is provided on the first branch pipeline, and the other end of the first branch pipeline is used to connect to an oxygen gas source. The second control valve is provided on the second branch pipeline, and the other end of the second branch pipeline is used to connect to a nitrogen gas source. The step of controlling the air inlet pipe to introduce a first preset amount of oxygen and a second preset amount of nitrogen into the plasma forming chamber comprises: controlling the first control valve and the second control valve to open; obtaining an amount of oxygen flowing through the first branch pipe and obtaining an amount of nitrogen flowing through the second branch pipe; When the amount of oxygen flowing through the first branch pipe is equal to the first preset amount, the first control valve is controlled to close; when the amount of nitrogen flowing through the second branch pipe is equal to the second preset amount, the second control valve is controlled to close.

3. The photoresist removal method according to claim 1 or 2, wherein: The degumming machine further includes a heating device, which is arranged in the reaction chamber; The step of feeding the silicon wafer coated with glue into the reaction chamber comprises: controlling the heating device to heat the reaction chamber; Determining whether the temperature of the reaction chamber reaches a preset temperature; When the temperature of the reaction chamber reaches the preset temperature, the silicon wafer coated with glue is sent into the reaction chamber.

4. The photoresist removal method according to claim 3, wherein: The degumming machine further includes a pressure control valve, which is installed on the degumming machine body and is connected to the reaction chamber; Between the step of feeding the silicon wafer coated with the photoresist into the reaction chamber and the step of controlling the plasma forming device to operate at a first preset radio frequency power and controlling the air inlet pipe to introduce a first preset amount of oxygen and a second preset amount of nitrogen into the plasma forming chamber, the photoresist removal method further comprises: The gas inlet pipe is controlled to introduce a fourth preset amount of oxygen into the plasma forming chamber, and the pressure control valve is controlled to operate according to the actual pressure of the reaction chamber so that the reaction chamber is maintained at the first preset pressure.

5. The photoresist removal method according to claim 4, wherein: The step of controlling the gas inlet pipe to introduce a fourth preset amount of oxygen into the plasma forming chamber, and controlling the pressure control valve to operate so that the reaction chamber is maintained at the first preset pressure includes: continuously obtaining the actual pressure of the reaction chamber; controlling the air inlet pipe to introduce the fourth preset amount of oxygen into the plasma forming chamber; Determining whether the actual pressure of the reaction chamber is greater than the first preset pressure; If the pressure of the reaction chamber is greater than the first preset pressure, the pressure control valve is controlled to open; if the pressure of the reaction chamber is less than or equal to the first preset pressure, the pressure control valve is controlled to close.

6. The photoresist removal method according to claim 4, wherein: After the steps of controlling the gas inlet pipe to introduce a fourth preset amount of oxygen into the plasma forming chamber and controlling the pressure control valve to operate so that the reaction chamber is maintained at the first preset pressure, the photoresist removal method further includes: The pressure control valve is controlled to operate according to the actual pressure of the reaction chamber to reduce the pressure of the reaction chamber, and the air inlet pipe is controlled to pass a fifth preset amount of oxygen into the plasma formation chamber, so that the pressure of the reaction chamber is maintained at a second preset pressure, wherein the second preset pressure is less than the first preset pressure.

7. The photoresist removal method according to claim 6, wherein: The step of controlling the plasma forming device to operate at a first preset radio frequency power and controlling the gas inlet pipe to introduce a first preset amount of oxygen and a second preset amount of nitrogen into the plasma forming chamber comprises: After the pressure of the reaction chamber reaches the second preset pressure, controlling the plasma forming device to operate at the first preset radio frequency power; Controlling an air inlet pipe to introduce the first preset amount of oxygen and the second preset amount of nitrogen into the plasma forming chamber; The action of the pressure control valve is controlled according to the actual pressure of the reaction chamber, so that the pressure of the reaction chamber is continuously maintained at the second preset pressure.

8. A degumming machine, characterized in that: The degumming machine comprises a degumming machine body, an air inlet pipe, a plasma forming device and a controller; The degumming machine body has a reaction chamber; The plasma forming device is arranged on the degumming machine body, and the plasma forming device has a plasma forming chamber, the plasma forming chamber is communicated with the reaction chamber, and the plasma forming device is used to form plasma; The air inlet pipe is in communication with the plasma forming chamber, and the air inlet pipe is used to transport oxygen and nitrogen to the plasma forming chamber; The controller is connected to both the air inlet pipe and the plasma forming device; The controller is used to control the plasma forming device to operate at a first preset radio frequency power, and to control the air inlet pipe to introduce a first preset amount of oxygen and a second preset amount of nitrogen into the plasma forming chamber; The controller is further configured to control the plasma forming device to operate at a second preset radio frequency power, and to control an air inlet pipe to introduce a third preset amount of oxygen into the plasma forming chamber so that the plasma forming device forms plasma to remove the glue from the silicon wafer coated with glue, wherein the second preset radio frequency power is greater than the first preset radio frequency power, the third preset amount is greater than the first preset amount, and the value range of the second preset amount is 5%-10%.

9. The degumming machine according to claim 8, characterized in that: The air intake pipe includes a first branch pipe of the main pipe, a second branch pipe, a first control valve, a second control valve, a first metering device and a second metering device; The main pipeline is provided on the degumming machine body and is in communication with the plasma forming chamber. One ends of the first branch pipeline and the second branch pipeline are both in communication with the main pipeline. The first control valve and the first metering device are both provided on the first branch pipeline. The other end of the first branch pipeline is used to connect to an oxygen gas source. The second control valve and the second metering device are both provided on the second branch pipeline. The other end of the second branch pipeline is used to connect to a nitrogen gas source. The first metering device is used to detect the amount of oxygen flowing through the first branch pipeline, and the second metering device is used to detect the amount of nitrogen flowing through the second branch pipeline. The controller is connected to the first control valve, the second control valve, the first metering device and the second metering device respectively. The controller is also used to control the first control valve and the second control valve to open, and to control the first control valve to close when the amount of oxygen flowing through the first branch pipeline is equal to a first preset amount, and to control the second control valve to close when the amount of nitrogen flowing through the second branch pipeline is equal to a second preset amount.

10. A degumming machine according to claim 8 or 9, characterized in that: The degumming machine further includes a pressure control valve and a pressure measuring device. The pressure control valve is installed on the degumming machine body and is in communication with the reaction chamber. The pressure measuring device is installed on the degumming machine body and is used to obtain the actual pressure of the reaction chamber. The controller is connected to both the pressure control valve and the pressure measuring device. The controller is also used to control the air inlet pipe to introduce a fourth preset amount of oxygen into the plasma forming chamber and to control the action of the pressure control valve according to the actual pressure of the reaction chamber, so that the reaction chamber is maintained at the first preset pressure.

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