High heat dissipating package electronic device and manufacturing process thereof

Abstract

Embodiments of the present disclosure relate to a high heat dissipating packaged electronic device and a manufacturing process thereof. The packaged power electronic device has a carrier structure including a base portion and a lateral portion extending transversely to the base portion. A die is bonded to the base portion of the carrier structure and has a first terminal on a first major face and a second terminal and a third terminal on a second major face. A package of insulating material embeds the semiconductor die, the second terminal, the third terminal and at least partially the carrier base. First, second and third outer connection areas are electrically coupled to the first, second and third terminals of the die, respectively, which is laterally surrounded by the package and faces a second major surface of the package. The lateral portion of the carrier structure extends from the base portion towards the second major surface of the package and has a higher height with respect to the die.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a high-heat-dissipation packaged electronic device and a manufacturing process thereof. In particular, the present disclosure relates to a high-voltage and / or high-power semiconductor device, such as a MOSFET transistor or an Insulated Gate Bipolar Transistor (IGBT), having a double-exposed surface. For example, the MOSFET device can be of the superjunction (also known as "charge balance") type. BACKGROUND

[0002] As is known, high-voltage and / or high-current power semiconductor devices are widely used, for example, in power conversion applications, in which they are subjected to high or very high voltage biasing (with values even up to 1000-2000 V) and are passed through by currents that can be quickly switched.

[0003] In these devices, therefore, special measures are required for forming the package in order to provide high electrical insulation, suitable spacing distances between the leads associated with the gate terminal, the source terminal and the drain terminal, and high heat dissipation to the outside.

[0004] Power semiconductor devices of this type (MOSFET or IGBT in the case of a silicon substrate) are formed in a die of semiconductor material (typically silicon, silicon carbide, silicon and gallium nitride - GaN - or gallium nitride only), having a first main surface in which the drain pad extends, and a second main surface, opposite the first, in which the source pad and the gate pad extend.

[0005] The die is bonded to a conductive support, known as "lead frame", provided with a drain lead, a source lead and a gate lead for the external connection of the device. To this end, the drain pad is usually bonded to a carrying portion of the lead frame, which also has a heat dissipation function; the gate lead and the source lead are coupled to the gate pad and to the source pad, respectively, by means of bonding wires or clamps or clips. The die / lead frame assembly is encapsulated in a mass of resin or other encapsulating insulating material. The encapsulating insulating material can be molded or laminated.

[0006] The conventional package for power semiconductor devices is usually arranged vertically and comprises pins projecting downward from a single bottom side of the package structure (typically parallelepiped-shaped) for electrical coupling to a printed circuit board (PCB). A suitable heat sink (typically a metal foil) is coupled to the package structure, also arranged vertically with respect to the printed circuit board.

[0007] In order to obtain increasingly compact dimensions in terms of thickness, horizontal packages have been developed, for example of the surface mount device (SMD) type, which also allow for double-sided cooling (DSC).

[0008] For example, Italian patent 102018000004209 (corresponding to publication US2019 / 0311976) describes a solution in which the die has a plurality of protruding gate regions, mutually separated by windows in which active source contact regions are arranged. A dissipating plate formed by an insulating multilayer is arranged above the die and comprises a bottom metal layer which is shaped in contrast to the protruding gate regions and has contact protrusions which extend within the windows and are in electrical contact with the source contact regions.

[0009] Even for power devices operating at high voltages (up to 1600-2000 V), the above-described solutions have a very compact structure, can be cooled on both sides and electrically insulated on one or both larger sides, but are very complex to manufacture and require a specific layout for each die size.

[0010] US2004266037 discloses a direct chip attach structure with a carrier structure comprising a base portion and a lateral portion. The lateral portion extends to a reduced portion of the package height and has no thermal function; a connection area extends at a distance from the package face and forms a hole for accommodating an external solder ball.

[0011] US2011198743 and US2010019381 disclose semiconductor devices with L-shaped carrier structures and contact regions protruding from the package.

[0012] US2008233679 discloses a semiconductor package with metal clips or metal plates for connecting the bottom side of the chip to the outside.

[0013] WO2006058030 discloses a semiconductor package formed by an upper lead frame and a lower lead frame. SUMMARY

[0014] The present disclosure provides high-voltage and / or high-power packaged devices overcoming the drawbacks of the prior art.

[0015] According to the present disclosure, packaged electronic devices and manufacturing processes thereof are provided.

[0016] In at least one embodiment, a device that can be a packaged power electronic device includes a support structure including a base portion and a lateral portion extending transverse to the base portion. The base portion has a first face and a second face opposite the first face. A die is coupled to the first face of the base portion of the support structure and the die has a first major face and a second major face. A height of the die extends from the first major face to the second major face. A conductive layer is on the second face of the base portion. First, second, and third terminals, the first terminal is on the first major face of the die and the second and third terminals are on the second major face of the die. One or more layers of insulating material surround and embed the die, the second terminal, the third terminal, and the base portion.

[0017] The device further includes one or more layers of insulating material surrounding and embedding the die, the second terminal, the third terminal, and the base portion. At least one of the one or more layers of insulating material is present at the first major surface. At least one of the one or more layers of insulating material is present at the second major surface opposite the first major surface. First, second, and third external connection regions are respectively electrically coupled to the first, second, and third terminals, the first, second, and third external connection regions are laterally surrounded by the one or more layers of insulating material and face the second major surface. A cross-section of the support structure extends from the base portion toward the second major surface with a first height greater than a second height of the die and in contact with the first external connection region.

[0018] In at least one embodiment, a packaged power electronic device described below includes a carrier structure including a base portion having a first face and a second face and a lateral portion extending transverse to the base portion; a die coupled to the first face of the base portion of the carrier structure, the die having a first major face and a second major face and a height between the first major face and the second major face; first, second, and third terminals, the first terminal extending on the first major face of the die and the second and third terminals extending on the second major face of the die; a package of insulating material embedding the semiconductor die, the second terminal, the third terminal and at least partially embedding the carrier base, the package having a first major surface and a second major surface; first, second, and third external connection regions respectively electrically coupled to the first, second, and third terminals, the first, second, and third external connection regions laterally surrounded by the package and facing the second major surface of the package, wherein the lateral portion of the carrier structure extends from the base portion toward the second major surface of the package and has a higher height relative to the die.

[0019] In at least one embodiment, the lateral portion may form a third external connection region and be flush with the second main surface of the package. Alternatively, the lateral portion may contact a first external connection region, and the first external connection region may be flush with the second main surface of the package.

[0020] In at least one embodiment, the packaged power electronics may include a connection structure of conductive material that extends through the package and couples a second terminal and a third terminal to a second external connection region and a third external connection region, respectively.

[0021] The package can be of the molded type or the laminated type.

[0022] In at least one embodiment, a process for manufacturing at least one embodiment of the power electronic device in the package described below includes: bonding a die to a carrier structure having a base portion and a lateral portion, the die having a first main surface and a second main surface, a first terminal on the first main surface of the die and a second terminal and a third terminal on the second main surface of the die, the die having a second main surface bonded to the base portion of the carrier structure such that the lateral portion of the carrier structure protrudes relative to the height of the die; and forming an insulating package in which the die is embedded and at least partially embedded in the carrier structure, wherein forming the package includes laterally surrounding a first external connection region, a second external connection region, and a third external connection region electrically coupled to the first terminal, the second terminal, and the third terminal, respectively, such that the first external connection region, the second external connection region, and the third external connection region face the first main surface of the package.

[0023] In at least one embodiment, forming the package may include: attaching a first external connection region to a base portion of each carrier structure; arranging a second and a third external connection region in a mold and molding the package.

[0024] In at least one embodiment, forming the package may include: forming a package region by lamination, the package region having a die embedded therein and at least partially having a carrier structure embedded therein and having a first surface and a second surface; forming a hole in the package region extending from the first surface of the carrier structure to a second terminal and a third terminal; forming a connection region of conductive material in the hole and on the second surface of the package region; forming a first insulating layer and a second insulating layer above the second surface and the first surface of the package region, respectively, the first insulating layer having a second connection opening and a third connection opening at the second terminal and the third terminal, respectively, and the second insulating layer having a first connection opening at the first terminal; and forming a first external connection region, a second external connection region and a third external connection region in the connection opening.

[0025] In at least one embodiment, forming the package may include: forming a package region in which a die is embedded and at least partially embedded a carrier structure and having a first surface and a second surface, wherein a lateral portion may form a third external connection region and be flush with a second main surface of the package. Alternatively, the lateral portion may have a smaller height than the package and contact the first external connection region, having a first external connection region flush with the second main surface of the package. Attached Figure Description

[0026] To better understand this disclosure, some embodiments thereof will now be described by way of non-limiting example with reference to the accompanying drawings, in which:

[0027] FIG. 1 It is along FIG. 2 Section line II cuts out and is a cross-sectional view of an embodiment of this power device in relation to the first shape of a portion of the device (support structure or "lead frame");

[0028] FIG. 2 yes FIG. 1 A perspective top view of the power device;

[0029] FIG. 3 yes FIG. 1 A schematic bottom view of the power device;

[0030] FIG. 4 It is used in intermediate manufacturing steps (e.g.) FIGS. 1-3 A perspective top view of a portion of a multi-support structure containing multiple power devices (of the type shown);

[0031] FIG. 5 Is along with FIG. 1 A cross-sectional view of another embodiment of this power device, taken with a profile similar to the profile line and relating to the first shape of the lead frame;

[0032] FIG. 6 yes FIG. 5 A perspective top view of the power device;

[0033] FIG. 7 yes FIG. 5 A schematic bottom view of the power device;

[0034] FIGS. 8-10 These are different embodiments of the power semiconductor device. FIGS. 1-3 Similar to and related to the first shape of the lead frame, cross-sectional views, perspective top views, and schematic bottom views;

[0035] FIGS. 11A-11G yes FIGS. 8-10 In the continuous manufacturing steps of power devices and FIG. 8Similar cross-sectional views;

[0036] FIGS. 12A-12G yes FIGS. 8-10 The power devices, in the manufacturing steps indicated by the same letters AG, are perpendicular to... FIGS. 11A-11G A cross-sectional view taken from the cross-section of the object;

[0037] FIG. 13 After the leads for the multi-support structure are formed before cutting, they are connected to... FIGS. 12A-12G Similar cross-sectional views;

[0038] FIGS. 14-16 These are, respectively, a cross-sectional view, a perspective top view, and a schematic bottom view of another embodiment of this power device and relating to a first shape of the lead frame;

[0039] FIGS. 17-19 These are, respectively, a cross-sectional view, a perspective top view, and a schematic bottom view of another embodiment of this power device and relating to a second shape of the lead frame;

[0040] FIG. 20 It is used in intermediate manufacturing steps (e.g., FIGS. 17-19 A perspective top view of a portion of another multi-support structure containing multiple power devices (of the type shown);

[0041] FIGS. 21-23 These are, respectively, a cross-sectional view, a perspective top view, and a schematic bottom view of another embodiment of this power device and relating to a second shape of the lead frame;

[0042] FIGS. 24-26 These are, respectively, a cross-sectional view, a perspective top view, and a schematic bottom view of another embodiment of this power device relating to the second shape of the lead frame;

[0043] FIGS. 27-29 These are, respectively, a cross-sectional view, a perspective top view, and a schematic bottom view of another embodiment of this power device relating to the second shape of the lead frame;

[0044] FIGS. 30-32 These are yet another embodiment of the power device and relate to the third shape of the lead frame along... FIG. 31 The cross-sectional view, perspective top view, and schematic bottom view taken by section line XXX-XXX;

[0045] FIGS. 33-35 Is FIGS. 30-32 A perspective top view of the lead frame used in power devices during successive manufacturing steps;

[0046] FIGS. 36-38 These are different embodiments of this power device related to the third shape of the lead frame (and)FIG. 30 (Similar to cross-sectional views) Cross-sectional views, perspective top views, and schematic bottom views;

[0047] FIGS. 39-41 These are another embodiment of the power device relating to the third shape of the lead frame (and...). FIG. 30 (Similar to cross-sectional views) Cross-sectional views, perspective top views, and schematic bottom views;

[0048] FIGS. 42-44 These are yet another embodiment of the power device relating to the third shape of the lead frame (and...). FIG. 30 (Similar to cross-sectional views) Cross-sectional views, perspective top views, and schematic bottom views;

[0049] FIG. 45 This refers to different embodiments of this power device related to the third shape of the lead frame (and...). FIG. 30 (Similar to the cross-sectional view); and

[0050] FIG. 46 This is another embodiment of the power device with BGA-type leads and FIG. 8 A cross-sectional view similar to a cross-sectional view;

[0051] FIG. 47 Is with FIG. 1 A cross-section of an embodiment of this disclosure with similar modifications;

[0052] FIG. 48 Is with FIG. 1 A cross-section of an embodiment of this disclosure with similar modifications;

[0053] FIG. 49 Is with FIG. 7 A schematic bottom view of an embodiment of this disclosure with similar modifications;

[0054] FIG. 50 Is with FIG. 21 A cross-section of an embodiment of this disclosure with similar modifications;

[0055] FIG. 51 Is with FIG. 30 A cross-section of an embodiment of this disclosure with similar modifications; and

[0056] FIG. 52 This is a cross-section of an embodiment of the present disclosure. Detailed Implementation

[0057] FIGS. 1-3A power device 1 (such as a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) or IGBT (Insulated Gate Bipolar Transistor)) of a semiconductor material with a first type of lead frame having a molded package and no protruding leads (leadless solution) is shown.

[0058] The power device 1 is integrated in a die 2, which is only schematically shown, and has a first surface 2A and a second surface 2B that are opposite each other. The first surface 2A and the second surface 2B may be referred to as surfaces.

[0059] Die 2 is formed from a semiconductor body in a known but not shown manner, which is formed by processing a substrate of silicon carbide or silicon and / or gallium nitride and combining conductive regions, insulating regions and suitable doped regions in a manner known to those skilled in the art.

[0060] In the example considered, die 2 is represented only by an equivalent circuit diagram as a high-voltage integrated transistor 10 (e.g., a MOSFET or IGBT) and has a source terminal S, a drain terminal D, and a gate terminal G. For example, transistor 10 may be a superjunction type formed by multiple basic units connected in parallel with each other in a manner not shown and known to those skilled in the art.

[0061] The drain terminal D is formed by a drain contact region 11, typically made of metal (such as aluminum), extending on the first surface 2A of the die 2. The gate terminal G is formed by a gate contact region 12, typically made of metal (such as aluminum), extending on the second surface 2B of the die 2. The source terminal S is formed by one or more source contact regions 13, typically made of metal (such as aluminum), extending on the second surface 2B of the die 2 (as indicated by dashed lines extending behind the cross-section).

[0062] Depending on the desired connection scheme, the source contact region 13 and the gate contact region 12 may have suitable shapes and arrangements, wherein the source contact region 13 is electrically insulated from the gate contact region 12.

[0063] A metallic support or load-bearing structure (hereinafter referred to as a "lead frame") 15 is bonded to the drain contact region 11. For example, a conductive adhesive layer (such as a conductive solder, not shown) may be provided that electrically and thermally connects the drain contact region 11 to the lead frame 15. The support structure 15 may be referred to as a load-bearing structure.

[0064] exist FIGS. 1-3In the embodiment shown, the lead frame 15 has an inverted L shape, having a base portion 16 (e.g., a first portion) and a transverse portion 17 (e.g., a second portion). Both the base portion 16 and the transverse portion 17 can have a thickness of approximately 100-200 micrometers. The base portion 16 and the transverse portion 17 are transverse to each other and can be substantially perpendicular to each other.

[0065] The base portion 16 of the lead frame 15 has a generally rectangular external shape (see also...). FIG. 4 ), mainly in the direction having a first axis X (also called longitudinal or length direction), a second axis Y (also called width direction), and a third axis Z (also called thickness or height direction), FIG. 1 The base portion 16 extends in the XY plane of the Cartesian coordinate system XYZ. The base portion 16 has a first side 16A and a second side 16B, which can be the first surface and the second surface of the base portion 16, and is bonded to the drain contact region 11 on its first side 16A by a conductive adhesive layer (not shown).

[0066] The base portion 16 may or may not have a planar structure (e.g., its first side 16A may be recessed), which has a larger area relative to the die 2 to form a carrier base for the die 2 itself.

[0067] The transverse portion 17 extends transversely, particularly perpendicularly to the base portion 16, adjacent to but spaced apart from the die 2. The transverse portion 17 has (along...) FIG. 1 The height of the third axis Z in the Cartesian coordinate system XYZ is higher than that of the die 2, approximately equal to the total height of the power device 1 (except for the relative lead thickness as discussed below), to form a heat flow path as explained in more detail below.

[0068] The die 2 and lead frame 15 are embedded in a molded type package 5 formed in areas of resin or other electrically insulating materials (e.g., sealant, molding compound, epoxy resin, etc.).

[0069] In the illustrated embodiment, the package 5 is typically a parallelepiped and has a first main surface 5A (arranged on...). FIG. 1 (at the top of the middle), the second main surface 5B (arranged in) FIG. 1 The power device 1 has four side walls 5C-5F, located at the bottom of the device. Here, the first transverse wall 5C and the second transverse wall 5D (parallel to the YZ plane of the Cartesian coordinate system XYZ) are spaced apart from each other in the length direction of the power device 1, and the first longitudinal wall 5E and the second longitudinal wall 5F (parallel to the XZ plane of the Cartesian coordinate system XYZ) are spaced apart from each other in the width direction of the power device 1.

[0070] Therefore, in the illustrated embodiment, the main surfaces 5A and 5B are rectangles with their long sides parallel to the first axis X.

[0071] The package 5 is housed in a front heat dissipation region 21 extending between a first surface 5A of the package 5 and a second side 16B of the base portion 16 of the lead frame 15. In the illustrated embodiment, the front heat dissipation region 21 is flush with the first main surface 5A of the package 5 (see also...). FIG. 2 For example, the surface 21A of the front heat dissipation area 21 is substantially coplanar with the surface of the insulating material of the package 5.

[0072] The package 5 contains a front heat dissipation region 21 extending along the second side 16B of the support structure (e.g., facing the surface of the support structure 15 away from the die 2). The insulating material of the package 5 covers the sidewalls or ends 21B of the front heat dissipation region 21.

[0073] The front heat dissipation area 21 is made of a material with good thermal conductivity and thus thermally connects the lead frame 15 to the outside; for example, the front heat dissipation area 21 may be made of copper, or may comprise multiple layers of different materials, such as copper and conductive solder paste. The front heat dissipation area 21 may be referred to as a conductive layer, a thermally conductive layer, or some other type of reference regarding materials with good thermal conductivity.

[0074] In some applications, a layer that is electrically insulating but has good thermal conductivity can be provided over a metal surface. In another solution, the front heat dissipation area 21 may include a layer that is referenced below. FIG. 11G , FIG. 12G The nickel and gold layers deposited by the ENIG (electro-free nickel immersion gold) process are discussed.

[0075] Package 5 also houses a gate lead 31 and one or more source leads 33 of conductive material. In the example considered, there are three source leads 33, see [link to relevant documentation]. FIG. 3 .

[0076] In addition, package 5 accommodates gate connection region 30 and one or more source connection regions 32 (three in this case, as extended behind the cross-section). FIG. 1 (The dashed line in the middle represents only one).

[0077] In detail, gate lead 31 and source lead 33 face the second main surface 5B of package 5 (see also...) FIG. 2 The gate connection region 30 extends between the gate lead 31 and the gate contact region 12; and the source connection region 32 extends between the source lead 33 and the corresponding source contact region (or single region) 13.

[0078] In the illustrated embodiment, the gate lead 31 and the source lead 33 are aligned with each other in the width direction (along the second axis Y of the Cartesian coordinate system XYZ) and are arranged near the first transverse wall 5C of the package 5.

[0079] The gate connection region 30 and the source connection region 32 are also made of a conductive material (such as copper); they can be formed in the redistribution layer RDL or in any other known manner, and respectively electrically connect the gate lead 31 to the gate contact region 12 and the source lead 33 to the source contact region 13.

[0080] The lateral portion 17 of the lead frame 15 extends toward the second main surface 5B of the package 5 until it is near it and comes into direct contact with the rear heat dissipation area 36.

[0081] The rear heat dissipation area 36 faces the second main surface 5B near the second transverse wall 5D of the package 5 (see also...) FIG. 3 ).

[0082] Therefore, the rear heat dissipation area 36 is in direct physical and electrical contact with the lead frame 15, and forms a drain lead (which will therefore also be referred to as drain lead 36 below).

[0083] Gate lead 31, source lead 33, and drain lead 36 extend flush with the second main surface 5B of package 5; alternatively, they may be recessed relative to the second main surface 5B. Furthermore, as referenced below... FIGS. 11A-11G 12A- FIG. 12G They can be made of conductive materials (e.g., nickel and gold) and can be formed in multiple layers.

[0084] In fact and as FIG. 3 As can be seen, the gate lead 31 and the source lead 32 are arranged longitudinally away from the drain lead 36, and therefore at a large creepage distance D1. For example, the creepage distance D1 can be 2.7 mm when the power device 1 operates at a voltage up to 850 V, and 3.5 mm when the power device 1 operates at a voltage up to 1200 V.

[0085] like FIG. 1 As shown, the power device 1 is intended to be coupled to the support 3 (e.g., a printed circuit board of insulating material) with the second main surface 5B of the package 5. The support 3 is provided with conductive traces and contact areas at the gate lead 31, source lead 32 and drain lead 36 in a manner known per se.

[0086] In addition, FIG. 1In this process, the heat sink 4A is bonded to the first main surface 5A of the package 5 by an adhesive layer 6 (e.g., solder paste or a thin layer of material that provides good electrical insulation and high thermal conductivity). In this way, the adhesive layer 6 allows for good heat dissipation of the power device 1, while allowing for electrical insulation of the heat sink 4A and coplanarity in the case of multiple power devices 1 having the same heat sink 4A placed on them.

[0087] The lead frame 15 allows the drain terminal 11 of the transistor 10 to be electrically connected to the drain lead 36 (the second main surface 5B of the package 5) which is placed on the same side as the gate lead 31 and the source lead 32, and the heat dissipation path is created by the front heat dissipation area 21 toward the front side of the transistor 10 (the first main surface 5A of the package 5) and by the drain lead 36 toward the rear side of the transistor 10 (the second main surface 5B of the package 5), thereby achieving effective dual-sided cooling (DSC).

[0088] The presence of heat sink 4A can also increase the cooling effect.

[0089] Therefore, the power device 1 has high heat dissipation; in addition, as described below, due to the large creepage distance D1, it can operate at high voltage and can be formed in a simple manner without the need for complex dissipation structures with specially designed parts or clips.

[0090] Multiple dies 2 can be mounted (e.g., aligned along a single direction, such as...) FIG. 4 As shown, unidirectional lead frames are strung together to form a multi-support structure 40) to obtain the power device 1 on corresponding lead frames 15 that are still connected to each other. As described below, the drain leads 36 of several devices may also have been bonded to a single lead frame 15. In addition, in a manner not shown, a front heat dissipation region 21 may have been bonded to the second side 16B of the base portion 16 of the lead frame 15.

[0091] In detail, FIG. 4 In the multi-support structure 40, lead frames 15 are arranged side by side and interconnected by connecting arms 41, which connect pairs of adjacent lead frames 15 at their transverse portions 17.

[0092] Specifically, here, the connecting arm 41 is located at the top edge of the transverse portion 17 of the lead frame 15 (in... FIG. 4 Extending near the base portion 16 of the lead frame 15, away from the base portion 16; alternatively, in this embodiment, they can be arranged at any height of the transverse portion 17 when permitted by the distance (creep distance) between areas exposed to different voltages.

[0093] exist FIG. 4In the middle, the drain lead 36 can also be seen being bonded to the transverse portion 17.

[0094] By etching a metal plate according to a known etching process to obtain the desired configuration of the base portion 16 and the lateral portion 17 and combining it with the drain lead 36, a multi-support structure 40 can be obtained from a metal plate (e.g., made of copper).

[0095] In this embodiment, after bonding the die 2, individual lead frames 15 are segmented; each lead frame 15 and its die 2 are inserted into a mold having gate leads 31 and source leads 33 placed therein, as well as corresponding gate connection regions 30 and source connection regions 32. Then, the package 5 is molded to obtain... FIGS. 1-3 Power device 1.

[0096] As an alternative to the above, the power device 1 can be manufactured by molding a multi-package structure that covers all the still-joined dies 2 and lead frames 15, and the individual power devices 1 can be separated by cutting. In this case, the protrusion at the connecting arm 41 can extend all the way to the surface of the package 5.

[0097] According to another embodiment (not shown), the multi-support structure can have a two-dimensional extended array shape. Similarly, in this case, the cutting of the lead frame may occur before or after the molding of the package 5.

[0098] FIGS. 5-7 A dual-sided cooling (DSC) type power device 50 is shown, having the same first lead frame type, molded package, and protruding leads. Therefore, the power device 50 has the same... FIGS. 1-3 The power device 1 has a similar structure, and the same reference numerals are used for the same parts. The differences will be described only with reference to the parts that are different.

[0099] In detail, as in FIG. 7 As can also be seen, in the power device 50, the package 5 is molded such that the lateral portion 17 of the lead frame 15 is exposed to the outside and flush with the second lateral wall 5D.

[0100] Furthermore, in the power device 50, the gate lead 31 and the source lead 33 extend all the way to the first lateral wall 5C of the package 5, thus having an exposed side flush with the first lateral wall 5C.

[0101] Therefore, as required in some applications (e.g., the automotive industry), in this embodiment, since the gate lead 31, source lead 33 and drain lead 36 face the sidewalls (5C, 5D) of the package 5, they may also be soldered to the support 3 along these sidewalls 5C, 5D, and the solder can be easily observed to verify its correctness and integrity.

[0102] Furthermore, the creepage distance D1 between the source lead 33 and the drain lead 36 is also large, allowing the power device 50 to operate at very high voltages.

[0103] Furthermore, this embodiment is characterized by its optimal cooling effect.

[0104] For power device 1, FIGS. 5-8 The power device 50 may be provided with a heat sink (also referred to as a first heat sink) 4A, which is bonded to the first main surface 5A of the package 5; in addition, the second heat sink 4B may be bonded to the transverse portion 17 by its own adhesive layer 7 (e.g., solder paste or a thin layer of material having the properties described above for adhesive layer 6).

[0105] FIGS. 5-8 The power device 50 may be formed similarly to the power device 1, having a suitable configuration of gate lead 31, source lead 34 and drain lead 36 and increasing the exposure area on the first main surface 5A and the second transverse wall 5D by properly placing them in a mold for molding package 5 and / or by special techniques.

[0106] FIGS. 8-10 A dual-sided cooled (DSC) type power MOSFET device 100 is shown, having the same first lead frame type, a laminated package, and no protruding leads (leadless solution). Therefore, the power device 100 has the same... FIGS. 1-3 The power device 1 has a similar general structure, and the same reference numerals are used for the same parts. Only the differences will be referred to in the description.

[0107] In detail, FIGS. 8-10 The power device 100 is (refer to below) FIGS. 11A-11G , FIGS. 12A-12G The lamination process described results in the formation of a package 105 including an encapsulation region 108, a first insulating layer 106, and a second insulating layer 107. Similar to... FIG. 1 The surfaces 5A and 5B of the package 5, the package 105 having (arranged on) FIG. 8 The first main surface 105A at the top of the middle and (arranged in) FIG. 8 The second main surface 105B is located at the bottom of the middle.

[0108] The packaging region 108 here surrounds the die 2, the lateral portion 17, and the lead frame 15, and the base portion 16, which may be referred to as the base arm. FIG. 8 (at the bottom of the middle) only the top part, and has (in the bottom of the middle) only the top part, and has (in the bottom of the middle part ... FIG. 8 In the middle, at the bottom) the main surface 110.

[0109] Gate connection region 30 and source connection region 32 FIG. 8 The dashed lines (in the image) are also embedded in the package area 108, but the drain lead 36, gate lead 31, and source lead 33 ( FIG. 10 The first insulating layer 106 (e.g., insulating solder) is formed in the first insulating layer 106, which extends on the main surface 110 of the package region 108.

[0110] The second insulating layer 107 extends partially on the second side 16B of the base portion 16 of the lead frame 105 and partially on the package region 108, wherein the second insulating layer laterally surrounds the front heat dissipation region 21.

[0111] As discussed below, in FIG. 8 and FIG. 9 In the middle, connecting arm 141 (similar to FIG. 4 The connecting arm 41 is also visible and originates from the cut lead frame 15.

[0112] FIGS. 8-10 The embodiments are further characterized by high dissipation and a large creepage distance D1 ( FIG. 10 Therefore, it is suitable for high-voltage applications.

[0113] It can be used in FIGS. 11A-11G , FIGS. 12A-12G , FIG. 13 The manufacturing steps shown and described below form FIGS. 8-10 100 power devices.

[0114] In particular, FIGS. 11A-11G , FIGS. 12A-12G and FIG. 13 This involves the simultaneous fabrication of several power devices 100 (e.g., an array of power devices) that are separated (e.g., individualized) in a final cutting step. Specifically, FIG. 13 and FIG. 11A Only a portion of the overall structure is shown, intended to form a single power device 100, while FIG. 12A The overall structure before cutting is shown.

[0115] Specifically, FIG. 13 The diagram shows the overall structure for manufacturing four power devices 100 arranged side by side in the width direction along the first axis X of the Cartesian coordinate system XYZ, but depending on the technology and machine used, any number of power devices 100 can typically be formed simultaneously.

[0116] In detail, FIG. 4 , FIG. 4The diagram shows an intermediate structure obtained after bonding the die 2 (already provided with drain contact region 11, gate contact region 12, and source contact region 13) to the corresponding lead frame 15. The lead frame 15 is shown here. FIG. 11A A visible part of the lead frame rod or lead frame bar and having FIG. 11A The shape shown is therefore still referred to as the multi-support structure 40; however, compared to FIG. 12A The difference is that, in FIG. 11B , 12A The post-drain conduction region 36 has not yet been formed during the manufacturing process.

[0117] return FIG. 12B , FIG. 11C The die 2 is attached to its lead frame 15, with the drain contact region 11 of the die 2 arranged downwards, while the gate contact region 12 and the source contact region 13 are arranged upwards.

[0118] Then, FIG. 12C , FIG. 11D The encapsulation region 108 is formed by laminating insulating material, depositing and pressing a continuous material plate until it reaches the height of the transverse portion 17 of the lead frame 15.

[0119] exist FIG. 12D , FIG. 11E In the package, the package region 108 (e.g., by laser) is perforated from the main surface 110 to form a gate via 120 and a source via 121, which are intended to accommodate the gate connection region 30 and the source connection region 32.

[0120] Then, FIG. 12E , FIG. 11F For example, the gate via 120 and the source via 121 are filled by electroplating a conductive material (such as copper). In this step, in addition to forming the gate connection region 30 and the source connection region 32, a conductive layer 125 is also formed and covers the main surface 110 of the package region 108.

[0121] Subsequently, FIG. 12F , FIG. 11G The conductive layer 125 is formed by one or more etching steps; in particular, it is removed over its entire thickness to electrically separate the portions that contact the gate connection region 30, the source connection region 32, and the lead frame 15 from each other, and the thickness is reduced in places where the gate lead 31, the source lead 33, and the drain lead 36 are not intended to be formed.

[0122] Then, FIG. 12G , FIG. 13A first insulating layer 106 (e.g., a solder mask) is deposited over the conductive layer 125, separating the portion to be electrically insulated, and then shaped to form an opening 126, at which the gate 30, source 33 and drain lead 36 are formed.

[0123] Furthermore, a second conductive layer 107 is deposited and shaped beneath the horizontal portion 16 of the lead frame 15. Specifically, the second conductive layer 107 forms a single large opening 127 that exposes most of the horizontal portion 16 of the lead frame 15.

[0124] Then, FIG. 13 and FIGS. 8-10 This forms leads 31, 33, and 36, as well as a front heat dissipation region 21. For this purpose, for example, an ENIG (electro-free nickel immersion gold) process is used, which includes electroplating nickel growth and obtaining a thin gold layer by immersion to improve solderability and oxidation resistance.

[0125] In this way, obtain FIGS. 14-16 The intermediate structure 130 shown is formed by a plurality of power devices 100 arranged side by side. The intermediate structure 130 is integrated into a multi-support structure 40 (still not separated) and interconnected by portions of the encapsulation region 108 and portions of the first insulating layer 106 and the second insulating layer 107, as well as by connecting arms 141.

[0126] Following possible marking operations (not shown), along with... FIGS. 8-10 The cutting line indicated by arrow 135 cuts through the intermediate structure 130 to obtain... FIG. 15 A single power device 100.

[0127] FIG. 16 A dual-sided cooling (DSC) type power device 150 is shown, having the same first type of L-shaped lead frame, laminated package and protruding leads.

[0128] Therefore, the power device 150 has the same characteristics as... FIGS. 5-7 The power device 100 has a similar general structure, but the gate lead 31 and source lead 33 ( FIGS. 14-16 , FIG. 1 The transverse portion 17 of the lead frame 15 is similar to that already referenced. FIG. 1 Describes the arrangement of the land.

[0129] In particular, FIGS. 11A-11G In, similar to FIGS. 12A-12GThe power device 1, the gate lead 31 and the source lead 33 are arranged to face the transverse wall (referred to herein as the first transverse wall 105C), in particular flush with the transverse wall, and the transverse portion 17 of the lead frame 15 is arranged to face the opposite transverse wall (referred to herein as the second transverse wall 105D), in particular flush with the opposite transverse wall.

[0130] This solution is also characterized by a large creepage distance D1, and is particularly suitable for automotive applications and applications requiring leads that also extend on the sidewalls (such as the first transverse wall 105C and the second transverse wall 105D) to obtain increased solder area and / or solder pair support (e.g., printed circuit boards, such as...). FIG. 13 The support member 3 shown in the figure has better detectability.

[0131] You can refer to the above text. FIGS. 14-16 , FIG. 14 , FIGS. 17-19 The same manufacturing process described is used to form different regions by appropriate dimensions and arrangement and / or by providing lateral components for forming the gate lead 31 and source lead 33 and the lateral portion 17 of the lead frame 15. FIGS. 1-3 150 power devices.

[0132] like FIGS. 17-19 As shown, the surface 21A of the front heat dissipation area 21 is substantially coplanar with the surface 107A of the second insulating material 107. The sidewall 21B of the front heat dissipation area 21 is covered by the second insulating material 107.

[0133] FIG. 17 A dual-sided cooling (DSC) type power device 200 is shown, which has a second lead frame type, a molded package, and no protruding leads (leadless solution).

[0134] Power device 200 has with FIGS. 1-16 The power device 1 has a similar structure, and the same reference numerals are used for the same parts. The differences will be described only with reference to the parts that are different.

[0135] In detail, FIG. 20 In the middle, the lead frame indicated by 215 is in FIG. 1 The cross-section has an inverted C shape because, in addition to the transverse portion 17 (hereinafter referred to as the first transverse portion 217), it already exists. FIGS. 17-20 In addition to the lead frame 15, there is a second transverse portion 218 (see also...) FIG. 20 ).

[0136] The second transverse portion 218 extends from the edge of the base portion (indicated here by 216) opposite the edge of the first transverse portion 217 (in a length direction parallel to the first axis X), extending adjacent to and at a distance from the die 2 on the opposite side relative to the first transverse portion 217, as shown in... FIGS. 1-3 As can also be seen, it shows multiple lead frames 215 that have not yet been separated.

[0137] The second lateral portion 218 has a smaller height relative to the first lateral portion 217, for example, approximately equal to the die 2. The second lateral portion 218 has an end surface 218A that is substantially flush with the die 2. However, this alignment is not required, and the second lateral portion 218 may be slightly higher or slightly lower than the die 2 in the height direction of the power device 200 (along the third axis Z).

[0138] The thermal connection structure 220 extends between the end surface 218A of the second lateral portion 218 and the second main surface 5B of the package 5. The thermal connection structure 220 is electrically insulating but thermally conductive to create a third heat dissipation path from the die 2 to the second main surface 5B of the package 5, in addition to the heat dissipation path through the front heat dissipation region 21 (first heat dissipation path) toward the front of the power device 200 and the heat dissipation path through the first lateral portion 217 of the lead frame 215 and the drain lead 36 (second heat dissipation path) toward the rear of the power device 200.

[0139] For example, a thermal connection structure 220 can be formed from a DBC (directly bonded copper) multilayer, which includes a first metal layer 221, a second metal layer 222, and an intermediate insulating layer 223 (e.g., made of ceramic such as aluminum oxide (Al2O3), aluminum nitride (AlN), or beryllium oxide (BeO)).

[0140] In the example shown, the thermal connection structure 220 is bonded to the end surface 218A of the second lateral portion 218 via an adhesive layer 225; the thermal continuity region 227 extends between the thermal connection structure 220 and the second main surface 5B of the package 5, facing the second main surface 5B, and is flush with the second main surface 5B in particular to facilitate contact with the carrier substrate (e.g., FIGS. 17-20 The support member 3) is welded. The thermal continuity region 227 further completes the third heat dissipation path toward the second main surface 5B of the package 5.

[0141] In the example shown, for the sake of simplicity of fabrication, the thermal continuity region 227 can be formed like the gate lead 31, source lead 33, and drain lead 36, even if it has no electrical function.

[0142] FIG. 20The power device 200 is characterized by high heat dissipation capability (due to three heat dissipation paths) and large creepage distance (here again given by the distance D1 between the source lead 33 and the drain lead 36). Here, in particular, the second lateral portion 218 of the lead frame 215, which has a smaller height relative to the first lateral portion 217, terminates at a distance from the gate lead 31 and the source lead 33.

[0143] It can be used FIG. 20 The multi-support structure 240 is similar to that used for FIG. 4 The power device 1 is formed as described. FIGS. 17-19 The power device 200. In detail, in FIGS. 21-23 In the process, before the molded package 5 and cut into individual power devices 200, the multi-structure support 240 forms a unidirectional strip with a lead frame 215 to which the die 2 has already been attached.

[0144] In particular, FIGS. 17-19 In the multi-support structure 240, lead frames 215 are arranged side by side and connected to each other by connecting arms 241, which connect pairs of adjacent lead frames 215 at their transverse portions 217.

[0145] Similar to FIGS. 5-7 The drain lead 36 and the front heat dissipation area 21 may have been integrated onto the multi-support structure 240 in a manner not shown. Furthermore, thermal connection structures 200 for different power devices 200 may have been integrated onto the multi-support structure 240 in a manner not shown.

[0146] Similarly for FIG. 22 The power device 200 can be cut with a multi-support structure 240 having the mounted die 2 before or after the molded package 5.

[0147] FIG. 23 A power device 250 with a second type of inverted C-shaped lead frame (similar to lead frame 215), molded package, and dual-sided cooling (DSC) of protruding leads is shown. Therefore, the structure of the power device 250 is similar to... FIGS. 5-7 The power device 200 has a structure, but it is similar to... FIGS. 14-16 The power device 50 has its source lead, gate lead, and drain lead facing the sidewall of the package 5.

[0148] In this case, especially as in FIGS. 21-23 , FIGS. 24-26 What is visible is different from FIGS. 17-19 Power devices 50 and FIGS. 11A-11G The power device 150 has a gate lead 31 facing the first longitudinal wall 5E and a source lead 33 facing the second longitudinal wall 5F.

[0149] Furthermore, the transverse portion 217 of the lead frame 215 is again arranged to be flush with the second transverse wall 5D.

[0150] Furthermore, in the illustrated embodiment, instead of three separate source leads 33, only one source lead is provided.

[0151] FIGS. 12A-12G The solution is also characterized by a large creepage distance D1 and high heat dissipation; as mentioned above, it is also particularly suitable for automotive applications.

[0152] FIG. 13 A dual-sided cooling (DSC) type power device 300 is shown, featuring a second type of inverted C-shaped lead frame (lead frame 215), a laminated package, and no protruding leads (leadless solution).

[0153] Power device 300 has with FIGS. 24-26 The power device 200 has a similar general structure, but is compared with the previous reference. FIGS. 27-29 , FIGS. 24-26 and FIGS. 21-23 The lamination process described is similar to the lamination process described.

[0154] The power device 300 is then encapsulated in a laminated package 105, having a thermal connection structure 220 with a bonding region 227 extending thereon, and having a gate terminal 31 and a source terminal 33 facing only the second main surface 105B of the package 105.

[0155] FIG. 28 The solution is also characterized by a large creepage distance D1 and high heat dissipation.

[0156] FIG. 29 A power device 350 of the type with a second type of inverted C-shaped lead frame (lead frame 215), a laminated package, and a dual-sided cooling (DSC) type with protruding leads is shown.

[0157] Therefore, the power device 350 has the same characteristics as... FIG. 29 The power device 300 has a similar general structure, but is similar to the reference. FIG. 28 As described, gate lead 31 and source lead 33 ( FIG. 29 , FIGS. 27-29 The first lateral portion 217 of the lead frame 215 faces the sidewall of the package 105. In this embodiment, if the distance between the lower exposed edge of the package 105, calculated along its side profile, and the gate lead 31 and source lead 33 is greater than or equal to the creepage distance D1, then the package 105 is considered to have a creepage distance of 105. FIGS. 30-32 If the second transverse portion 218 can also face the first transverse wall 105C, then the second transverse portion 218 can also face the first transverse wall 105C.

[0158] Specifically, gate lead 31 and source lead 33 face the corresponding sidewalls; specifically, gate lead 31 is arranged flush with the first longitudinal wall, here defined by 105E ( FIGS. 33-35 The source lead 33 (only one in this case) is arranged flush with the second longitudinal wall, here by 105F ( FIGS. 1-3 (Instructions). In addition, the first transverse portion 217 of the lead frame 215 is arranged to be flush with the second transverse wall 105D.

[0159] FIG. 33 The solution is also characterized by a large creepage distance D1 and high heat dissipation; as mentioned above, it is also particularly suitable for automotive applications.

[0160] FIG. 33 Involves lead frames with a third type (see also) FIG. 34 ), a dual-sided cooling (DSC) type power device 400 with a molded package and no protruding leads (leadless solution).

[0161] Power device 400 has with FIG. 30 The power device 1 has a similar general structure, and the same reference numerals are used for the same parts; only the differences will be described.

[0162] For details, please refer to the specific examples. FIG. 34 In power device 400, the lead frame (indicated herein by 415) has an inverted cup or C-shaped shape with protruding walls; in fact, relative to the first embodiment (lead frame 15 used in power devices 1, 50, 100 and 150), lead frame 415 here has a partition wall 418 that extends from the base portion (indicated herein by 416) to form a C (in plan view) and extends along three sides of the rectangular shape of the base portion 416. Here, the partition wall 418 is connected to the transverse portion (indicated herein by 417) by means of its ends. In fact, together with the transverse portion 417, the partition wall 418 defines a recess 419 therein for receiving the die 2. FIG. 35 ).

[0163] As an alternative to the above, the partition wall 418 may have an end that is arranged near the transverse portion 417 without directly contacting it.

[0164] The partition wall 418 has a smaller height than the transverse portion 417, for example, equal to the height of the core 2, even though it may be different.

[0165] Thermally conductive but electrically insulating thermal connection structure 420 extends along partition wall 418 (reference) FIG. 30And it contacts the partition wall 418. The thermal connection structure 420 has a similar structure to the thermal connection structure 220 and can again be formed here by a DBC (direct bonded copper) multilayer, which includes ( FIGS. 17-19 The first metal layer 421, the second metal layer 422, and the intermediate insulating layer 423.

[0166] The thermal connection structure 420 has a C-shape similar to that of the partition wall 418. FIG. 35 , FIG. 32 ), but with shorter arms to extend at a distance from the lateral portion 417 and thus electrically connected to the lead frame 415 only by means of its first metal layer 421. FIGS. 21-23 Alternatively, a thermal connection structure 420 can be formed with the disconnected portion.

[0167] Similar to FIG. 30 In one embodiment, the thermal connection structure 420 can be bonded to the partition wall 418 via an adhesive layer 427.

[0168] Thermal continuity areas 427A-427B extend contact thermal connection structure 420 ( FIG. 32 It can be formed like the back heat dissipation region 36, as well as the gate lead 31 and the source lead 33.

[0169] In the illustrated embodiments (see details) FIGS. 17-19 The structure provides three thermal continuity regions 427A-427B, with one thermal continuity region for each side of the C-shape of the thermal connection structure 420. Specifically, the first thermal continuity region 427A is arranged on the side of the thermal connection structure 420 away from the transverse portion 417 of the lead frame 415 and is similar to... FIG. 33 Thermal continuity region 227. Two second thermal continuity regions 427B are arranged on the C-shaped arms of the thermal connection structure 420 extending longitudinally (parallel to the first axis X), and are guided toward the lateral portion 417 and spaced apart from the first thermal continuity region 427A, such that the gate lead 31 and the source lead 33 can extend in the region between the first thermal continuity region 427A and the second thermal continuity region 427B. FIG. 34 , FIGS. 33-35 ).

[0170] Usually, it can be addressed as previously stated. FIG. 20 The power device 400 is manufactured as described in the power device 200. See also, in particular, power device 400. FIG. 35 and FIG. 20 When lead frame 415 is still connected to the adjacent lead frame 415 (in FIGS. 36-38 Not shown in the reference, but similar to the reference. FIGS. 30-32As described, when arranged side-by-side, the thermal connection structure 420 can be integrated into the lead frame 415. Similarly, FIGS. 21-23 In cutting multi-support structures (similar to) FIG. 37 Before the molded package 5, thermal continuity regions 427A-427B can be bonded to thermal connection structure 420. Alternatively, after cutting the multi-support structure and before the molded package 5, thermal connection structure 420 and thermal continuity regions 427A-427B can be bonded to lead frame 417.

[0171] In the power device 400, the creepage distance is given by the distance D2 between the second thermal continuity region 427B and the source lead 33 and by the distance D3 between the second thermal continuity region 427B and the drain lead 36.

[0172] Therefore, due to the proximity of the longitudinal walls 5E and 5F and the additional two heat dissipation paths formed by the C-shaped arm of the thermal connection structure 420 and the second thermal continuity region 427B, the power device is characterized by very high heat dissipation capability. Due to the shorter creepage distance, depending on the overall package size and the sum of distances D2 and D3, the power device 400 is suitable for low-voltage applications (e.g., up to 300V).

[0173] FIG. 38 A power device 450 with a third type of inverted cup-shaped lead frame (lead frame 415), a molded package, and protruding leads of the dual-sided cooling (DSC) type is shown. Therefore, the power device 450 has the same characteristics as... FIGS. 36-38 The power device 400 has a similar structure, but is similar to... FIGS. 39-41 The power device 250 has a gate lead 31 and a source lead 33 facing the longitudinal walls 5E and 5F of the package 5, and a drain lead 36 facing the second transverse wall 5D.

[0174] In the same situation, especially FIGS. 30-32 , FIGS. 11A-11G As can be seen, the gate leads 31 are arranged side by side, particularly flush with the first longitudinal wall 5E, and the source leads 33 are arranged side by side, particularly flush with the second longitudinal wall 5F.

[0175] Furthermore, the transverse portion 417 of the lead frame 415 is again arranged side by side here, particularly flush with the second transverse wall 5D.

[0176] Furthermore, in the illustrated embodiment, three distinct source leads 33 are provided, one of which faces the second longitudinal wall 5F.

[0177] FIGS. 12A-12GThe solution is also characterized by its very high heat dissipation capacity; as mentioned above, it is also particularly suitable for automotive and low-voltage applications.

[0178] FIG. 13 A dual-sided cooling (DSC) type power device 500 is shown, featuring a third type of inverted cup-shaped lead frame (lead frame 415), a laminated package, and no protruding leads (leadless solution).

[0179] Power device 500 has with FIG. 41 The power device 400 has a similar general structure, but is similar to the previous reference. FIGS. 39-41 , FIGS. 42-44 and ​ The lamination process described is similar to the lamination process described.

[0180] Then, the power device 500 is encapsulated in a laminated package 105, having a thermal connection structure 420 thermally coupled to thermally connected regions 427A-427B and having a gate terminal 31 and a source terminal 33 facing only the second main surface 105B of the package 105. ​ ).

[0181] ​ The solution is also characterized by its very high heat dissipation.

[0182] ​ A power device 550 with a third type of inverted cup-shaped lead frame (lead frame 15), a laminated package, and a dual-sided cooling (DSC) type with protruding leads is shown.

[0183] Therefore, the power device 550 has the same characteristics as... Figures 39-41 The power device 500 has a similar general structure, but is similar to the reference. Figures 36-38 As described, gate lead 31 and source lead 33 ( Figure 43 , Figure 44 ) and the lateral portion 417 of the lead frame 415 facing the sidewall of the package 105.

[0184] Specifically, the gate lead 31 is arranged side by side with the first longitudinal wall 105E, one of the source leads 33 is arranged on one side of the second longitudinal wall 105F, and the transverse portion 417 of the lead frame 415 is arranged on one side of the second transverse wall 105D.

[0185] Figures 42-44 The solution is also characterized by its very high heat dissipation; as mentioned above, it is also particularly suitable for automotive applications.

[0186] Figure 45 It shows Figures 30-32A variation of the power device 400, wherein the thermal connection structure (indicated herein by 620) has a lateral portion 628 to improve electrical insulation between the thermal connection structure 620 and the lateral portion 417 of the lead frame 415.

[0187] In practice, the lateral portion 628 extends from the longitudinal end of the thermal connection structure 620 near the lateral portion 417 in the direction of the second main surface 5B of the package 5, such that the second metal layer (indicated herein by 622) no longer faces the lateral portion 417 of the lead frame 415, but its ends face the second main surface 5B of the package 5 (as well as the corresponding ends of the first metal layer and the intermediate insulating layer, indicated herein by 621 and 623 respectively). In this way, the lateral portion 417 of the lead frame 415 can be electrically separated from the second metal layer 622 and the second thermal continuity region 427B in a safe manner.

[0188] This change also applies to power devices 450, 500, and 550 with cup-shaped lead frames 415.

[0189] In addition, Figure 45 In this configuration, the height of the thermal connection structure 620 is chosen such that the height of the surface of the thermal connection structure 620 facing the second main surface 5B of the package 5 (relative to the base portion 426), including the partition wall 418 of the lead frame 415, is lower than the height of the lateral portion 417. In this case, the thermal continuity regions 427A-427B have a greater thickness relative to the power devices 400, 450, 500, and 550.

[0190] This change also applies to power devices 450, 500, and 550 with cup-shaped lead frames 415.

[0191] The above description and Figures 1-45 The characteristics and configuration of leads 31, 33, and 36 shown for arrangement to form an LGA (planar grid array) connection are also applicable to different connection solutions, such as BGA (ball grid array) connection solutions, such as... Figure 46 As shown, for having Figures 8-10 The power device 650 has the structure of power device 100.

[0192] In particular, Figure 46 In this configuration, the gate lead 31 and drain lead 36 (and source lead 33, which is not visible) comprise a first layer 45 (e.g., aluminum), covered by a second layer 46 (e.g., gold), and covered by spheres 47 that protrude relative to the first insulating layer 106 in a manner known per se.

[0193] This variant applies to all power devices described above: 1, 50, 100, 150, 200, 250, 300, 350, 400, 450, 500, 550, and 600.

[0194] Therefore, the power devices described in this paper allow for improved power consumption due to better thermal performance.

[0195] It can reduce manufacturing costs because it does not require the use of top clips to achieve dual-sided cooling (DSC).

[0196] Finally, it is apparent that modifications and variations can be made to the power devices described and illustrated herein without departing from the scope of this disclosure as defined in the appended claims. In particular, the different embodiments described can be combined to provide further solutions.

[0197] For example, as indicated, even in a solution with molded package 5, cutting of a single lead frame may occur after molding, taking into account creepage distance.

[0198] In addition, such as Figures 47-51 As shown, the lateral portions 17, 217, and 417 can extend to reach the second main surface 5B of the package 5, thus allowing direct external access. Therefore, the rear heat dissipation region (drain lead) 36 is no longer present. The same solution applies to all embodiments discussed herein. Consequently, the lead frames 15, 215, and 415 can be integrated with the bottom portion.

[0199] In addition, such as Figure 48 As shown, provided the technology allows, the lateral portions 17, 217, and 417 can be made to any desired thickness. Thus, the bottom drain pad can be formed from different areas.

[0200] exist Figure 49 In the middle, the transverse portion 17 is directly exposed on both sides (bottom or second main surface 5B and second transverse wall or second side 5D).

[0201] like Figure 52 As shown, the lateral portion 17 can be flush with the first main surface (here, 105A). This also applies to all embodiments. In particular, if the lateral portions 17, 217, and 417 are modified to have as... Figures 47-51 The shape shown can extend integrally between the first and second main surfaces 5A, 105A, 5B, 105B of the package 5, 105 without interruption.

[0202] The packaged power electronic device can be summarized as including: a carrier structure (15; 215; 415) comprising a base portion (16; 216; 416) and a lateral portion (17; 217; 417), the base portion having a first surface and a second surface (16A, 16B) and a lateral portion extending transversely to the base portion; a die (2) bonded to the first surface of the base portion of the carrier structure, the die having a first main surface and a second main surface (2A, 2B) and a height between the first main surface and the second main surface; a first terminal, a second terminal, and a third terminal (11, 12, 13), the first terminal (11) extending on the first main surface (2A) of the die, and the second terminal and the third terminal (12, 13) extending on the second main surface (2B) of the die (2); and an insulating material package (5; 10). 5) The package includes a semiconductor die (2), a second terminal (12), a third terminal (13), and a carrier substrate (16; 216; 416) embedded therein. The package has a first main surface and a second main surface (5A, 5B; 105A, 105B); and a first external connection region, a second external connection region, and a third external connection region (36, 31, 33; 17; 217; 417) electrically coupled to the first terminal, the second terminal, and the third terminal, respectively. The first external connection region, the second external connection region, and the third external connection region are sideways to the package and face the second main surface of the package. The lateral portion (17; 217; 417) of the carrier structure (15; 215; 415) extends from the substrate portion (16; 216; 416) toward the second main surface of the package and has a higher height relative to the die.

[0203] The lateral portions (17; 217; 417) may form a first external connection area (36) and be flush with or in contact with the second main surface (5B; 105B) of the package (5; 105), and the first external connection area (36) is flush with the second main surface (5B; 105B) of the package.

[0204] The packaged power electronic device may include a conductive material connection structure (30, 32) extending through the package (5; 105) and coupling a second terminal (12) and a third terminal (13) to a second external connection region (31) and a third external connection region (33), respectively.

[0205] The packaged power electronic device may further include a front heat dissipation region (21) of thermally conductive material on the second side (16B) of the substrate portion (16; 216; 416) of the carrier structure (15; 215; 415).

[0206] The package (5; 105) may have an elongated shape defining the length direction (X) and the width direction (Y), the second outer connection region and the third outer connection region (31, 33) are arranged side by side in the width direction, and the first outer connection region (36) is arranged in the length direction to be spaced apart from the first outer connection region and the second outer connection region.

[0207] The base portion (16; 216; 416) and the transverse portion (17; 217; 417) of the load-bearing structure (15; 215; 415) can form an L-shaped cross section.

[0208] The load-bearing structure (215; 415) can be C-shaped in cross-section.

[0209] The support structure (215) may further include a heat dissipation portion (218) extending transversely to the base portion (216) from a first surface of the base portion (216). The base portion of the support structure having an elongated shape has a first transverse edge and a second transverse edge that are longitudinally opposite each other. The transverse portion (217) extends from the first transverse edge, and the heat dissipation portion (218) extends from the second transverse edge of the base portion (216).

[0210] The heat dissipation portion (218) may have a lower height than the lateral portion (217), and the thermal connection structure (220) may extend between the heat dissipation portion and the fourth external connection area (227), which is side-surrounded by the package (5; 105) and faces the second main surface (5B; 105B) of the package (5; 105). The thermal connection area (220) is electrically insulated.

[0211] The fourth external connection region (227) can be formed by DBC (directly bonded copper).

[0212] The support structure (415) may be cup-shaped and may include a partition wall (418) extending along the periphery of the base portion (416) to form a C and having an end that contacts or is spaced apart from the lateral portion (417), the partition wall (418) having a lower height than the lateral portion, and wherein a thermal connection structure (420) extends from the partition wall toward the second main surface (5B; 105B) of the package (5; 105).

[0213] The packaged power electronic device may further include a plurality of additional external connection regions (427A) and (427B) that are sideways to the package (5; 105) and extend between the partition wall (418) and the second main surface (5B; 105B) of the package.

[0214] The transverse portion (17; 217; 417) of the load-bearing structure (15; 215; 415) may have a first side and a second side opposite to each other, the first side facing the die (2) and the second side facing the side surface (5D; 105D) of the package (5; 105).

[0215] The second side of the transverse portion (17; 217; 417) can be flush with the package (105).

[0216] A process for manufacturing a packaged power electronic device can be summarized as including: bonding a die (2) to a carrier structure (15; 215; 415) having a base portion (16; 216; 416) and a lateral portion (17; 217; 417), the die having a first main surface and a second main surface (2A, 2B), a first terminal (11) on the first main surface and a second terminal and a third terminal (12, 13) on the second main surface of the die, the die having a second main surface bonded to the base portion of the carrier structure, thereby bearing... The transverse portion of the carrier structure protrudes in height relative to the die; and an encapsulation (5; 105) is formed with an insulating material in which the die is embedded and at least partially embedded, wherein the encapsulation includes a first external connection region, a second external connection region, and a third external connection region (36, 31, 33; 17; 217; 417) that are laterally electrically coupled to the first terminal, the second external connection region, and the third external connection region, respectively, such that the first external connection region, the second external connection region, and the third external connection region face the first main surface of the encapsulation.

[0217] The various embodiments described above can be combined to provide further embodiments. If it is necessary to employ concepts from various patents, applications, and publications to provide additional embodiments, aspects of the embodiments can be modified.

[0218] Based on the detailed description above, these and other changes can be made to the embodiments. Generally, the terminology used in the following claims should not be construed as limiting the claims to the specific embodiments disclosed in the specification and claims, but should be interpreted to include all possible embodiments and the full scope of the equivalents conferred by these claims. Therefore, the claims are not limited to this disclosure.

Claims

1. A device comprising: A support structure includes a base portion and a transverse portion extending transversely to the base portion, the base portion having a first surface and a second surface opposite to the first surface; A die, coupled to the first surface of the base portion of the support structure, the die having a first main surface and a second main surface and a height extending from the first main surface to the second main surface; A conductive layer on the second surface of the substrate portion; A first terminal, a second terminal, and a third terminal, wherein the first terminal is on the first main surface of the die, and the second terminal and the third terminal are on the second main surface of the die; One or more insulating material layers surround and embed the die, the second terminal, the third terminal, and the base portion; A first main surface, wherein at least one insulating material layer of one or more insulating material layers is present on the first main surface; A second main surface, opposite to the first main surface, wherein at least one of the one or more insulating material layers is present at the second main surface; The first, second, and third external connection regions are electrically coupled to the first, second, and third terminals, respectively. These regions are surrounded by one or more insulating material layers and face the second main surface. The lateral portion of the support structure extends from the base portion toward the second main surface, and the lateral portion has a first height greater than the second height of the die and contacts the first external connection area.

2. The device according to claim 1, comprising: A conductive material connection structure extends through the one or more insulating material layers and couples the second terminal and the third terminal to the second external connection region and the third external connection region, respectively.

3. The device of claim 1, wherein the one or more insulating material layers are of the molding type or the lamination type.

4. The device according to claim 1, wherein: The conductive layer is a heat dissipation area of ​​a thermally conductive material, which is bonded to the second surface of the base portion of the support structure.

5. The device of claim 1, wherein the one or more insulating material layers have an elongated shape defining a length direction and a width direction transverse to the length direction, the second external connection region and the third external connection region are arranged side by side in the width direction, and the first external connection region is arranged in the length direction to be spaced apart from the first external connection region and the second external connection region.

6. The device of claim 1, wherein the base portion and the transverse portion of the support structure form an L-shape in cross-section.

7. The device according to claim 1, wherein the support structure is C-shaped in cross-section.

8. The device of claim 1, wherein the support structure further includes a heat dissipation portion extending transversely to the base portion from the first surface of the base portion, the base portion of the support structure having an elongated shape having a first transverse edge and a second transverse edge that are longitudinally opposed to each other, the transverse portion extending from the first transverse edge, and the heat dissipation portion extending from the second transverse edge of the base portion.

9. The device of claim 8, wherein the heat dissipation portion has a height lower than the lateral portion, and the thermal connection structure extends between the heat dissipation portion and the fourth external connection region, the fourth external connection region being surrounded by the sides of the one or more insulating material layers and facing the second main surface, the thermal connection structure being electrically insulating.

10. The device of claim 9, wherein the fourth external connection region is formed by direct bonding of copper DBC.

11. The device of claim 1, wherein the support structure is cup-shaped and includes a wall extending to form a C-shape along the periphery of the base portion and having an end that contacts or is spaced apart from the transverse portion, the wall having a height lower than the transverse portion, and wherein a thermal connection structure extends from the wall toward the second main surface.

12. The device according to claim 11, further comprising: Multiple further external connection areas are surrounded by the sides of the one or more insulating material layers and extend between the wall and the second main surface.

13. The device of claim 1, wherein the lateral portion of the support structure has a first side and a second side opposite to each other, the first side facing the die and the second side facing away from the die.

14. The device of claim 13, wherein the second side of the lateral portion is flush with the one or more insulating material layers.

15. A method comprising: The first surface of the die is coupled to the first surface of the base portion of the support structure which is transverse to the transverse portion of the support structure. The die includes a first terminal on the first surface of the die, a second terminal on a second surface of the die opposite to the first surface, and a third terminal. One or more insulating material layers are formed, the one or more insulating material layers having the die embedded within them and at least partially embedding the support structure within them. The one or more insulating material layers include a first external connection region, a second external connection region, and a third external connection region that are electrically coupled to the first terminal, the second terminal, and the third terminal, respectively. as well as A conductive layer is formed on the second surface of the base portion of the support structure, which is opposite to the first surface of the support structure.

16. The method of claim 15, further comprising: The first external connection region is coupled to the lateral portion of the support structure.

17. The method of claim 15, further comprising: Forming holes extending into the respective insulating layers of the one or more insulating material layers to reach the second terminal and the third terminal; as well as A connection area of ​​conductive material is formed in the hole and on the second and third terminals.

18. The method of claim 17, wherein forming the one or more insulating material layers comprises: A first insulating material layer is formed on the sidewall of the base portion, the sidewall of the transverse portion, and the sidewall of the core. as well as A second insulating material layer is formed on the sidewall of the connection area of ​​the conductive material and on the surface of the support structure opposite to the core.

19. A device comprising: The support structure includes a first portion and a second portion transverse to the first portion, the first portion having a first surface and a second surface opposite to the first surface; A die is coupled to the first surface of the first portion of the support structure, the die being spaced apart from the second portion; A conductive layer, on the second surface of the first portion, the conductive layer being separated from the die through the first portion of the support structure, the conductive layer having a third surface facing away from the die; as well as One or more insulating layers at least partially surround the die, the support structure, and the conductive layer, the one or more insulating layers including a fourth surface coplanar with the third surface of the conductive layer.

20. The device of claim 19, wherein the one or more insulating layers comprise: The first insulating layer is on the sidewall of the die and on the sidewall facing the second portion of the die; as well as The second insulating layer is on the first insulating layer, on the second surface of the first portion, and on the sidewall of the conductive layer.

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