Ultrasonic transducer array packaging structure and manufacturing method

Abstract

The present invention discloses an ultrasonic transducer array packaging structure and a manufacturing method thereof. The ultrasonic transducer array packaging structure includes a substrate, a metallized frame, and an ultrasonic transducer array located within the metallized frame, wherein the substrate is disposed above the metallized frame; the metallized frame, the ultrasonic transducer array, and the substrate are interconnected via a low-temperature bonding technique; the substrate includes solder joints, a passivation layer, and a metal interconnection layer embedded within the passivation layer, wherein the solder joints are located on the other side of the substrate relative to the metallized frame; and the gap and surface between the metallized frame and the ultrasonic transducer array are filled and covered with an acoustic matching layer. The present invention utilizes semiconductor technology to manufacture the substrate and the metallized frame separately, and utilizes the low-temperature bonding technology of the semiconductor packaging process to package the ultrasonic transducer array, thereby avoiding the failure problem caused by the ultrasonic transducer array being subjected to high-temperature semiconductor processes and high-temperature bonding processes.

Description

Technical Field

[0001] The present invention belongs to the technical field of ultrasonic devices, and in particular relates to an ultrasonic transducer array packaging structure and a manufacturing method thereof. Background Art

[0002] In ultrasonic detection and ultrasonic diagnosis, the resolution of ultrasonic images is proportional to the frequency of ultrasound and inversely proportional to the size of the ultrasonic transducer array. The higher the frequency, the higher the image resolution. The smaller the size of the ultrasonic transducer array, the smaller the period between individual array elements in the array. This poses a huge challenge to the manufacture and packaging of ultrasonic transducer array probes.

[0003] The existing method for manufacturing ultrasonic transducer array probes is to simply stack the transducer array and a PCB (Printed Circuit Board) or FPCB (Flexible Printed Circuit Board) to form a shape. Excess non-conductive epoxy resin is extruded to remove the excess, forming interconnections between the array elements and the PCB pads. The transducers are then grounded by bonding a thin metal layer on the side or surface of the transducer array to the housing or wire bonding. This manufacturing method has many drawbacks: First, due to the limited manufacturing capabilities of wide-pitch traces on the PCB or FPCB, the size and spacing of the ultrasonic transducer array elements must be compatible with the PCB or FPCB, making it impossible to manufacture high-frequency ultrasonic transducer arrays. Second, when the array is a high-frequency two-dimensional array, multiple layers of PCBs, FPCBs, or adapter boards are required to individually output the array element signals. However, as the number of circuit board layers increases, the performance of the ultrasonic transducer decreases significantly, seriously affecting the imaging function of the device. Third, the existing packaging and manufacturing methods for ultrasonic transducer array probes are semi-automated, limited to small batches, resulting in high production costs, long production cycles, and a heavy reliance on the experience and skills of engineering technicians. Summary of the Invention

[0004] Based on this, it is necessary to provide an ultrasonic transducer array packaging structure and packaging method to address the technical problems in the existing ultrasonic transducer array manufacturing, such as difficulty in supporting signal extraction of high-density, high-frequency two-dimensional arrays and poor reliability.

[0005] The present invention provides an ultrasonic transducer array packaging structure, comprising a substrate, a metallized frame, and an ultrasonic transducer array located within the metallized frame, wherein the substrate is disposed above the metallized frame;

[0006] The metallized frame, the ultrasonic transducer array, and the substrate are interconnected by a low-temperature bonding technology, wherein the bonding temperature of the low-temperature bonding is lower than half of the Curie temperature of the ultrasonic transducer array;

[0007] The substrate includes a solder joint, a passivation layer, and a metal interconnection layer embedded in the passivation layer, wherein the solder joint is located on the other side of the substrate relative to the metallization frame;

[0008] The gap and surface between the metalized frame and the ultrasonic transducer array are filled and covered with an acoustic matching layer.

[0009] Furthermore, the low-temperature bonding technology is: low-temperature bonding achieved by anisotropic conductive adhesive.

[0010] Furthermore, the low-temperature bonding technology is: low-temperature bonding achieved by metal-to-metal low-temperature bonding technology. Specifically, the metal-to-metal low-temperature bonding technology refers to metal low-temperature bonding technologies such as copper-copper bonding and gold-gold bonding.

[0011] Furthermore, the surface of the substrate and / or the metallized frame is also provided with bumps.

[0012] Furthermore, the bumps are metal bumps or conductive organic bumps.

[0013] Furthermore, the ultrasonic transducer array includes periodically arranged ultrasonic transducer elements and organic fillers filling gaps between the ultrasonic transducer elements, and the solder joints are aligned with the organic fillers in a vertical direction.

[0014] Furthermore, the filling height of the organic filler is less than or equal to the height of the ultrasonic transducer array element.

[0015] Furthermore, the upper surface and lower surface of the ultrasonic transducer array are respectively provided with metal layers, the metal layer on the upper surface of the ultrasonic transducer array is the positive electrode of the ultrasonic transducer array, and the metal layer on the lower surface of the ultrasonic transducer array is the negative electrode of the ultrasonic transducer array. The positive electrode of the ultrasonic transducer array forms a positive connection with the metal interconnection layer on the substrate, and the negative electrode of the ultrasonic transducer array forms a negative connection with the metal interconnection layer on the substrate through the metallized frame.

[0016] Furthermore, the substrate includes one or more layers of the passivation layer, and the substrate includes one or more layers of the metal interconnection layer.

[0017] Furthermore, the material of the passivation layer is a photolithographic material.

[0018] Furthermore, the substrate of the metallized frame is an organic material substrate and / or an inorganic material substrate.

[0019] The present invention provides a method for manufacturing an ultrasonic transducer array packaging structure, comprising the following steps:

[0020] Providing a carrier, and performing photolithography and electroplating on the surface of the carrier to obtain a substrate including solder joints, a passivation layer, and a metal interconnection layer;

[0021] Prepare and provide a substrate, and use semiconductor and / or board-level packaging technology to prepare a metallized frame;

[0022] Pre-bonding and / or bonding the metallized frame and the substrate;

[0023] The ultrasonic transducer array is placed in a metallized frame to form a pre-bond with the substrate;

[0024] The metallized frame, the ultrasonic transducer array, and the substrate are bonded together by low-temperature bonding technology to achieve structural and electrical interconnection between the three.

[0025] Providing a material for forming an acoustic matching layer, pouring the material onto the surfaces of the metallized frame and the ultrasonic transducer array, and into the gap between the metallized frame and the ultrasonic transducer array, and thinning and polishing the surface after the material solidifies to form an acoustic matching layer;

[0026] The packaging structure is removed from the carrier to obtain the ultrasonic transducer array packaging structure.

[0027] Furthermore, the low-temperature bonding technology is: using anisotropic conductive adhesive to achieve bonding or using metal-to-metal low-temperature bonding technology to achieve bonding.

[0028] The present invention utilizes semiconductor technology to separately prepare the substrate and metallized frame, and utilizes low-temperature bonding technology in semiconductor packaging technology to achieve interconnection between the substrate, metallized frame, and ultrasonic transducer array. The present invention has the following advantages: First, the semiconductor process is utilized to separately prepare the substrate and metallized frame, thereby avoiding the failure problem of the ultrasonic transducer array caused by the high-temperature process in the semiconductor process; Second, the low-temperature bonding technology in the semiconductor packaging process is utilized to achieve bonding between the substrate, metallized frame, and ultrasonic transducer array, thereby avoiding the failure problem of the ultrasonic transducer array caused by the high-temperature bonding process; Third, the semiconductor process can be used to prepare an ultra-thin substrate with small line width and line spacing and containing multiple metal interconnect layers, thereby improving the signal pin lead-out capability of the ultrasonic transducer array while minimizing the impact of the metal interconnect layer on the ultrasonic transducer array; Fourth, the preparation method provided by the embodiment of the present invention can be used to achieve fully automated, large-scale batch standard production through existing semiconductor packaging equipment, with a short production cycle, low cost, and high yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A side view of an ultrasonic transducer array packaging structure provided by one embodiment of the present invention;

[0030] FIG2( a ) is a schematic diagram of a substrate according to an embodiment of the present invention;

[0031] FIG2( b ) is a schematic diagram of attaching anisotropic conductive adhesive to the surface of a substrate using a laminating device such as a vacuum laminator according to an embodiment of the present invention;

[0032] FIG2( c ) is a schematic diagram of pre-attaching a metallized frame to a substrate by wafer-level alignment bonding according to an embodiment of the present invention;

[0033] FIG2( d ) is a schematic diagram of embedding an ultrasonic transducer array into a metalized frame using a chip mounter according to an embodiment of the present invention;

[0034] Figure 3 A side view of an ultrasonic transducer array packaging structure provided by another embodiment of the present invention;

[0035] FIG4( a ) is a schematic diagram of a substrate according to an embodiment of the present invention;

[0036] FIG4( b ) is a schematic diagram of pre-bonding a metallized frame to a substrate by wafer-level alignment bonding according to an embodiment of the present invention;

[0037] FIG4( c ) is a schematic diagram showing an embodiment of the present invention wherein an ultrasonic transducer array is embedded in a metallized frame by a chip mounter to form a pre-bond with a substrate;

[0038] Figure 5 is a schematic diagram of a substrate of the present invention;

[0039] Figure 6 This is a flowchart of a method for manufacturing an ultrasonic transducer array packaging structure according to an embodiment of the present invention;

[0040] Figure 7 The figure is a flowchart of a method for manufacturing an ultrasonic transducer array packaging structure according to an embodiment of the present invention.

[0041] Marking Description

[0042] 1-solder point; 2-metal interconnect layer; 3-passivation layer; 4-anisotropic conductive adhesive; 5-bump; 6-metallized frame; 7-ultrasonic transducer array element; 8-organic filler; 9-acoustic matching layer; 10-metal layer; 11-substrate; 12-ultrasonic transducer array. DETAILED DESCRIPTION

[0043] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0044] like Figure 1FIG2 shows a side view of an ultrasonic transducer array packaging structure according to an embodiment of the present invention, comprising a substrate 11, a metalized frame 6, and an ultrasonic transducer array 12 located within the metalized frame 6, wherein the substrate 11 is disposed above the metalized frame 6.

[0045] The substrate 11 includes a solder joint 1, a passivation layer 3, and a metal interconnection layer 2 embedded in the passivation layer 3. The solder joint 1 is located on the other side of the substrate 11 relative to the metallization frame 6.

[0046] The gap and surface between the metalized frame 6 and the ultrasonic transducer array 12 are filled and covered with an acoustic matching layer 9 .

[0047] The base material of the metalized frame 6 is inorganic materials such as glass and silicon and / or organic materials such as glass fiber cloth.

[0048] The metallized frame 6 , the ultrasonic transducer array 12 , and the substrate 11 are interconnected by a low-temperature bonding technique, wherein the bonding temperature of the low-temperature bonding is lower than half of the Curie temperature of the ultrasonic transducer array 12 .

[0049] Specifically, the present invention realizes an embedded fan-out ultrasonic transducer array packaging structure. Due to the use of low-temperature bonding technology, when packaging the ultrasonic transducer array, the ultrasonic transducer is not always under a high-temperature process, thereby avoiding device failure.

[0050] In one embodiment, the metalized frame 6 , the ultrasonic transducer array 12 and the substrate 11 are interconnected at low temperature via anisotropic conductive adhesive 4 .

[0051] In one embodiment, the metallized frame 6 , the ultrasonic transducer array 12 and the substrate 11 are interconnected at low temperature by using a low-temperature metal-to-metal bonding technique.

[0052] In one embodiment, the surface of the substrate 11 and / or the metalized frame 6 is further provided with bumps 5, which are used to achieve negative electrical interconnection between the metalized frame 6 and the substrate 11. The bumps 5 are made of metal or conductive organic matter.

[0053] The ultrasonic transducer array 12 includes periodically arranged ultrasonic transducer elements 7 and organic fillers 8 filling the gaps between the ultrasonic transducer elements 7 . The solder joints 1 are aligned with the organic fillers 8 in a vertical direction.

[0054] The performance of an ultrasonic transducer is closely related to the structure connecting its upper and lower surfaces. Due to the significant impedance difference between the transducer and the acoustic propagation medium, the acoustic wave emitting surface is typically treated with an acoustic matching layer 9 to compensate for this impedance difference, achieving a filtering effect. Part of the acoustic wave generated by the transducer is emitted outward through the surface, while the remaining part propagates in the opposite direction. To reduce reflections of the oppositely directed sound waves within the transducer, a material with high acoustic attenuation is used on the back of the transducer to absorb the reflected sound waves, thereby increasing the transducer's bandwidth. Metal materials such as copper and tin have high acoustic reflection and low attenuation, so they should not be placed directly opposite the transducer. If this is unavoidable, the thickness of the metal layer should be minimized. For example, the thickness of the metal interconnect layer 2 must be strictly controlled within a few microns. Since the height of the solder joint 1 is tens of microns, in this embodiment, the solder joint 1 is vertically aligned with the organic filler 8 to avoid placing the solder joint 1 directly opposite the ultrasonic transducer element 7.

[0055] In this embodiment, the filling height of the organic filler 8 is lower than the height of the ultrasonic transducer elements 7. This design is due to the fact that anisotropic conductive adhesive conducts electricity only in the direction of pressure. However, when the density of conductive particles in the adhesive is high and the spacing between transducer elements is too small, if the organic filler 8 and the ultrasonic transducer elements 7 are the same height, the corresponding conductive particles below the organic filler 8 may form a path in the lateral direction, which will cause a series connection between adjacent elements. In this embodiment, by making cuts in the organic filler 8, the filling height of the organic filler 8 is lower than the height of the ultrasonic transducer elements 7, forming electrical isolation between the elements and improving the bonding efficiency of the anisotropic conductive adhesive.

[0056] Metal layers 10 are provided on the upper and lower surfaces of the ultrasonic transducer array 12. For ease of description, the following text refers to the upper and lower metal layers 10 of the ultrasonic transducer array 12 as "positive" and "negative," respectively. The positive electrode of the ultrasonic transducer array 12 forms a positive connection with the metal interconnect layer 2 on the substrate 11, while the negative electrode of the ultrasonic transducer array 12 forms a negative connection with the metal interconnect layer 2 on the substrate 11 via the metallized frame 6.

[0057] A continuous metal layer 10 is sputtered from the direction of the ultrasonic transducer array 12 onto the surface and sidewalls of the ultrasonic transducer array 12, the metalized frame 6, and the anisotropic conductive adhesive 4. The cathode of the ultrasonic transducer array 12 is interconnected with the metalized frame 6 through the metal layer 10 on its sidewall and the surface of the anisotropic conductive adhesive 4, and thus interconnected with the cathode 201 on the substrate 11.

[0058] The gap between the metallized frame 6 and the ultrasonic transducer array 12 , and the surfaces of the metallized frame 6 and the ultrasonic transducer array 12 are filled and covered with an acoustic matching layer 9 .

[0059] In the ultrasonic transducer array packaging structure provided by an embodiment of the present invention, the metal interconnect layer 2 is interconnected with the positive electrode of the ultrasonic transducer array 12 at low temperatures via anisotropic conductive adhesive 4. The metal interconnect layer 2 is also interconnected with the metallized frame 6 at low temperatures via anisotropic conductive adhesive 4. The negative electrode of the ultrasonic transducer array 12 is interconnected with the negative electrode of the substrate 11 via the metal layer 10 on the surface of the anisotropic conductive adhesive 4 and the metallized frame 6. The anisotropic conductive adhesive 4 allows bonding of the substrate 11, metallized frame 6, and ultrasonic transducer array 12 at a temperature lower than half the Curie temperature of the ultrasonic transducer array 12, thereby avoiding failure of the ultrasonic transducer array due to high-temperature bonding. Furthermore, the present invention utilizes semiconductor packaging processes to separately fabricate the substrate 11 and metallized frame 6, thereby avoiding failure of the ultrasonic transducer array 12 due to high-temperature semiconductor manufacturing processes.

[0060] Figure 1 The figure shows a preferred embodiment of the present invention, in which bumps 5 are formed on the surface of the metallized frame 6. These bumps 5 are used to reduce the bonding pressure between the metallized frame 6 and the substrate 11, reduce the bonding difficulty, and improve the bonding reliability. It should be understood that this does not limit the placement of the bumps 5 in the embodiment of the present invention. The bumps 5 can be placed only on the substrate 11 or on both the substrate 11 and the metallized frame 6.

[0061] Figure 2 briefly illustrates the assembly and bonding process of this embodiment. As shown in Figure 2(a), the substrate 11 is shown. As shown in Figure 2(b), anisotropic conductive adhesive 4 is applied to the surface of the substrate 11 using a laminating device such as a vacuum laminator. As shown in Figure 2(c), the metallized frame 6 is pre-attached to the substrate 11 using wafer-level alignment bonding. As shown in Figure 2(d), the ultrasonic transducer array 12 is embedded in the metallized frame 6 using a die bonding machine, forming a pre-bond with the substrate 11. Finally, pressure is applied to the substrate 11, metallized frame 6, and ultrasonic transducer array 12 at a temperature less than half the Curie temperature of the ultrasonic transducer array 12 using a wafer bonding device, ensuring complete bonding.

[0062] Figure 3 A schematic side view of another embodiment of the present invention's structure is shown. Instead of anisotropic conductive adhesive 4 between the substrate 11, metallized frame 6, and ultrasonic transducer array 12, low-temperature bonding is achieved using metal-to-metal low-temperature bonding technology, via the metal interconnect layer 2 and metal layer 10. An acoustic matching layer 9 is filled in the gap between the ultrasonic transducer array 12 and the metallized frame 6. In this embodiment, the acoustic matching layer 901 on the surfaces of the ultrasonic transducer array 12 and the metallized frame 6 is made of a conductive material to interconnect the negative electrode of the ultrasonic transducer array 12 with the negative electrode 201 on the substrate 11.

[0063] In some embodiments, the acoustic matching layer 901 is a silver particle filled epoxy resin.

[0064] Optionally, in this embodiment, the height of the organic filler 8 may be flush with the height of the ultrasonic transducer array element 7 .

[0065] Optionally, in this embodiment, the surface of the metallized frame 6 and / or the base 11 may include bumps 5 .

[0066] Figure 4 briefly illustrates the assembly and bonding process of this embodiment. Figure 4(a) shows the substrate 11. As shown in Figure 4(b), the metallized frame 6 is pre-bonded to the substrate 11 via wafer-level alignment bonding. As shown in Figure 4(c), the ultrasonic transducer array 12 is embedded into the metallized frame 6 via a placement machine, forming a pre-bond with the substrate 11. Finally, pressure is applied to the substrate 11, metallized frame 6, and ultrasonic transducer array 12 at room temperature using pressure bonding equipment, such as wafer bonding equipment, to fully bond the three components together.

[0067] Figure 5 A schematic side view of the substrate structure provided by the present invention is shown. The substrate 11 in the present invention comprises solder joints 1, several metal interconnect layers 2, and several passivation layers 3. The metal interconnect layers 2 are embedded in the passivation layers 3, and the passivation layers are formed of a photoresist. The substrate 11 of the present invention is manufactured using a semiconductor process, resulting in smaller line widths and line spacings, enabling signal extraction from each element in a high-density, high-frequency ultrasonic transducer array.

[0068] like Figure 6 The present invention shows a method for manufacturing an ultrasonic transducer array packaging structure, which includes the following steps:

[0069] Step S601, providing a carrier, performing photolithography and electroplating on the surface of the carrier to obtain a substrate 11 including solder joints 1, a passivation layer 3, and a metal interconnection layer 2. Specifically, sputtering, photolithography, electroplating, film stripping, etching, etc. can be performed on the surface of the carrier;

[0070] Step S602 , providing a substrate, and preparing a metallized frame 6 using wafer-level or board-level processes such as laser, wet etching, photolithography, electroplating, and sputtering;

[0071] Step S603, attaching anisotropic conductive adhesive to the surface of the substrate 11;

[0072] Step S604, pre-bonding the metallized frame 6 and the substrate 11 together using an anisotropic conductive adhesive;

[0073] Step S605: Using a chip mounter to mount the ultrasonic transducer array 12 onto the metalized frame 6 using flip-chip / face-mount technology, and bonding the ultrasonic transducer array 12, the metalized frame 6, and the substrate 11 together using anisotropic conductive adhesive 4;

[0074] Step S606, sputtering metal from the acoustic wave emitting surface of the ultrasonic transducer array 12 to form a continuous metal layer on the surface and sidewalls of the packaging structure;

[0075] Step S607: providing a material for forming an acoustic matching layer 9, casting the material onto the surfaces of the metalized frame 6 and the ultrasonic transducer array 12, and into the gap between the metalized frame 6 and the ultrasonic transducer array 12, and thinning and polishing the material after solidification to form the acoustic matching layer 9, thereby obtaining an ultrasonic transducer array package.

[0076] Step S608: After cutting and sorting with a dicing machine, the package structure is removed from the carrier.

[0077] like Figure 7 Another method for manufacturing an ultrasonic transducer array packaging structure of the present invention is shown, comprising the following steps:

[0078] Step S701, providing a carrier, performing photolithography and electroplating on the surface of the carrier to obtain a substrate 11 including solder joints 1, a passivation layer 3, and a metal interconnection layer 2. Specifically, sputtering, photolithography, electroplating, stripping, etching, and the like can be performed on the surface of the carrier;

[0079] Step S702 , providing a substrate, and preparing a metallized frame 6 using wafer-level or board-level processes such as laser, wet etching, photolithography, electroplating, and sputtering;

[0080] Step S703, bonding the metallized frame 6 and the substrate 11 together by using a low-temperature metal-to-metal bonding technique;

[0081] Step S704: Using a chip mounter to mount the ultrasonic transducer array 12 onto the metallized frame using flip-chip / face-mount technology, and bonding the ultrasonic transducer array 12, the metallized frame 6, and the substrate 11 together using low-temperature metal-to-metal bonding technology.

[0082] Step S705: providing a conductive material for forming an acoustic matching layer 9, casting the material onto the surfaces of the metalized frame 6 and the ultrasonic transducer array 12, and into the gap between the metalized frame 6 and the ultrasonic transducer array 12, and thinning and polishing the material after solidification to form the acoustic matching layer 9, thereby obtaining an ultrasonic transducer array package;

[0083] Step S706: After cutting and sorting by a dicing machine, the package body is removed from the carrier.

[0084] The effective gains of the present invention are as follows: first, the semiconductor process is used to separately manufacture the substrate 11 and the metallized frame 6, thereby avoiding the failure problem of the ultrasonic transducer array caused by the high-temperature process in the semiconductor process; second, the low-temperature bonding technology in the semiconductor packaging process is used to realize the bonding between the substrate, the metallized frame and the ultrasonic transducer array, thereby avoiding the failure problem of the ultrasonic transducer array caused by the high-temperature bonding process; third, through the semiconductor process, an ultra-thin substrate with small line width and line spacing and containing multiple metal interconnect layers can be prepared, while improving the signal pin lead-out capability of the ultrasonic transducer array and minimizing the influence of the metal interconnect layer on the ultrasonic transducer array; fourth, the preparation method provided by the embodiment of the present invention can realize fully automated, large-scale batch standard production through existing semiconductor packaging equipment, and has a short production cycle, low cost and high yield.

[0085] FIG4 is a flow chart of a method for manufacturing an ultrasonic transducer array packaging structure provided in an embodiment of the present invention. It should be noted that although the embodiment of the present invention describes the manufacturing process of the substrate 11 and the metallized frame 6 in steps S401 and S402, respectively, this does not limit the manufacturing order of the two. Depending on the actual situation, the substrate 11 and the metallized frame 6 can be manufactured in any order or simultaneously.

[0086] Specifically, in step S401, the carrier is a substrate commonly used in the semiconductor packaging field. Depending on the desired number of metal interconnect layers 2, the carrier is subjected to lamination processes such as photolithography and electroplating to form at least one metal interconnect layer 2, a corresponding number of passivation layers 3, and solder joints 1. The carrier is then removed to obtain the base 11.

[0087] In other embodiments, in order to improve the bonding strength between the substrate 11 and the metallized frame 6 , a step of preparing bumps 5 on the substrate 11 and / or the metallized frame 6 is further included.

[0088] The above-described embodiments merely illustrate several implementations of the present invention, and while their descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art would be able to make numerous variations and improvements without departing from the spirit of the present invention, all of which fall within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

Claims

1. An ultrasonic transducer array packaging structure, characterized in that: It comprises a substrate (11), a metallized frame (6), and an ultrasonic transducer array (12) located in the metallized frame (6), wherein the substrate (11) is arranged above the metallized frame (6); The metallized frame (6), the ultrasonic transducer array (12), and the substrate (11) are interconnected by a low-temperature bonding technology, wherein the bonding temperature of the low-temperature bonding is lower than half of the Curie temperature of the ultrasonic transducer array (12), wherein the metallized frame (6) and the substrate (11) are pre-bonded / or bonded, the ultrasonic transducer array (12) is placed in the metallized frame (6), and pre-bonded with the substrate (11), and the metallized frame (6), the ultrasonic transducer array (12), and the substrate (11) are bonded by the low-temperature bonding technology, thereby achieving structural and electrical interconnection between the three. The substrate (11) comprises a solder joint (1), a passivation layer (3), and a metal interconnection layer (2) embedded in the passivation layer (3), wherein the solder joint (1) is located on the other side of the substrate (11) relative to the metallization frame (6); The gap and surface between the metalized frame (6) and the ultrasonic transducer array (12) are filled and covered with an acoustic matching layer (9).

2. The ultrasonic transducer array packaging structure according to claim 1, characterized in that: The low-temperature bonding technology is: low-temperature bonding achieved by anisotropic conductive adhesive.

3. The ultrasonic transducer array packaging structure according to claim 1, characterized in that: The low-temperature bonding technology is: low-temperature bonding achieved through low-temperature bonding technology between metals.

4. The ultrasonic transducer array packaging structure according to claim 1, wherein the surface of the substrate (11) and / or the metallized frame (6) is further provided with bumps (5).

5. The ultrasonic transducer array packaging structure according to claim 4, characterized in that: The convex points (5) are metal convex points or conductive organic convex points.

6. The ultrasonic transducer array packaging structure according to claim 1, characterized in that: The ultrasonic transducer array (12) comprises periodically arranged ultrasonic transducer array elements (7) and organic fillers (8) filling gaps between the ultrasonic transducer array elements (7), and the solder joints (1) are aligned with the organic fillers (8) in a vertical direction.

7. The ultrasonic transducer array packaging structure according to claim 6, characterized in that: The filling height of the organic filler (8) is less than or equal to the height of the ultrasonic transducer array element (7).

8. The ultrasonic transducer array packaging structure according to claim 1, characterized in that: The upper surface and lower surface of the ultrasonic transducer array (12) are respectively provided with metal layers (10); the metal layer (10) on the upper surface of the ultrasonic transducer array (12) is the positive electrode of the ultrasonic transducer array (12); the metal layer (10) on the lower surface of the ultrasonic transducer array (12) is the negative electrode of the ultrasonic transducer array (12); the positive electrode of the ultrasonic transducer array (12) forms a positive electrode connection with the metal interconnection layer (2) on the substrate (11); and the negative electrode of the ultrasonic transducer array (12) forms a negative electrode connection with the metal interconnection layer (2) on the substrate (11) through a metallized frame (6).

9. The ultrasonic transducer array packaging structure according to any one of claims 1 to 8, characterized in that: The substrate (11) includes one or more layers of the passivation layer (3), and the substrate (11) includes one or more layers of the metal interconnection layer (2).

10. The ultrasonic transducer array packaging structure according to any one of claims 1 to 8, characterized in that: The material of the passivation layer (3) is a photolithographic material.

11. The ultrasonic transducer array packaging structure according to any one of claims 1 to 8, characterized in that: The substrate of the metallized frame (6) is an organic material substrate and / or an inorganic material substrate.

12. A method for manufacturing an ultrasonic transducer array packaging structure, characterized in that: The steps include: Providing a carrier, performing photolithography and electroplating on the surface of the carrier to obtain a substrate (11) comprising a solder joint (1), a passivation layer (3), and a metal interconnection layer (2); Prepare and provide a substrate, and prepare a metallized frame (6) using semiconductor and / or board-level packaging technology; Pre-bonding and / or bonding the metallized frame (6) and the substrate (11); placing the ultrasonic transducer array (12) into the metalized frame (6) to form a pre-bond with the substrate (11); The metallized frame (6), the ultrasonic transducer array (12), and the substrate (11) are bonded together by low-temperature bonding technology to achieve structural and electrical interconnection between the three. Providing a material for forming an acoustic matching layer (9), pouring the material onto the surfaces of the metallized frame (6) and the ultrasonic transducer array (12), and into the gap between the metallized frame (6) and the ultrasonic transducer array (12), and thinning and polishing the surface after the material solidifies to form the acoustic matching layer (9); The packaging structure is removed from the carrier to obtain the ultrasonic transducer array packaging structure.

13. The method for manufacturing the ultrasonic transducer array packaging structure according to claim 12, characterized in that: The low-temperature bonding technology is: using anisotropic conductive adhesive to achieve bonding or using metal-to-metal low-temperature bonding technology to achieve bonding.

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