Magnetic memory and method of reading and writing thereof

Abstract

The application provides a magnetic memory and a reading and writing method thereof. The magnetic memory comprises at least one cell layer, and the cell layer comprises: a plurality of parallel first wires located in a first plane; a plurality of parallel second wires located in a second plane, wherein the first plane is parallel to the second plane, and a projection of the second wire on the first plane intersects the first wire; and a plurality of storage elements arranged between the first plane and the second plane, wherein the storage element comprises a magnetic tunnel junction and a bidirectional gating device arranged in series along a direction perpendicular to the first plane, the magnetic tunnel junction is connected with the first wire, the bidirectional gating device is connected with the second wire, and the bidirectional gating device is configured to be turned on when a threshold voltage and / or current is applied. The magnetic memory of the application changes the traditional magnetic memory design, and greatly improves the storage density of the magnetic field memory.

Claims

1. A magnetic storage device, characterized in that, It includes at least one unit layer, the unit layer comprising: Several parallel first wires lie within a first plane; Several parallel second wires are located in a second plane, and the first plane is parallel to the second plane. The projection of the second wires on the first plane intersects the first wires. A plurality of storage elements are disposed between the first plane and the second plane. Each storage element includes a magnetic tunnel junction and a bidirectional gating device arranged in series along a direction perpendicular to the first plane. The magnetic tunnel junction is connected to the first wire, and the bidirectional gating device is connected to the second wire. The bidirectional gating device is configured to conduct when a threshold voltage and / or current is applied. The magnetic memory also includes a source line, which is electrically connected to the second end of the first conductor.

2. The magnetic storage device according to claim 1, characterized in that, The magnetic tunnel junction includes: The free layer connected to the first conductor; A non-magnetic insulating layer is disposed on the upper surface of the free layer; A fixed layer is disposed on the upper surface of the non-magnetic insulating layer, wherein the magnetic moment direction of the free layer is variable, and the magnetic moment direction of the fixed layer is fixed. One end of the bidirectional gating device is connected to the fixed layer, and the other end is connected to the second wire.

3. The magnetic storage device according to claim 1, characterized in that, The first wire includes a first end and a second end, and the magnetic memory further includes a plurality of write bit lines and a plurality of first select transistors, wherein the first select transistors are configured to electrically connect the first end of the first wire to the write bit lines in response to a first control signal.

4. The magnetic storage device according to claim 1, characterized in that, The magnetic memory further includes a plurality of bit lines and a plurality of second selection transistors, the second selection transistors being configured to electrically connect the second wires to the bit lines in response to a second control signal.

5. The magnetic storage device according to claim 1, characterized in that, The projection of the second conductor onto the first plane intersects the first conductor perpendicularly.

6. The magnetic storage device according to claim 1, characterized in that, The magnetic memory includes multiple unit layers, which are arranged sequentially along a direction perpendicular to the first plane. Adjacent unit layers share the same conductor, wherein the conductor is used as the first conductor in the upper unit layer and as the second conductor in the lower unit layer.

7. The magnetic storage device according to claim 1, characterized in that, The magnetic memory includes multiple unit layers, which are arranged sequentially along a direction perpendicular to the first plane. Adjacent unit layers share the same conductor, wherein the conductor is used as either the first conductor or the second conductor in both the upper and lower unit layers.

8. The magnetic storage device according to claim 1, characterized in that, Different storage elements are controlled separately by using the bidirectional gating device as a control switch.

9. The magnetic storage device according to claim 1, characterized in that, The material of the bidirectional gating device is doped hafnium oxide.

10. A method for reading and writing a magnetic memory, characterized in that, The magnetic memory includes at least one unit layer, the unit layer comprising: Several parallel first wires lie within a first plane; Several parallel second wires are located in a second plane, and the first plane is parallel to the second plane. The projection of the second wires on the first plane intersects the first wires. A plurality of storage elements are disposed between the first plane and the second plane. Each storage element includes a magnetic tunnel junction and a bidirectional gating device arranged in series along a direction perpendicular to the first plane. The magnetic tunnel junction is connected to the first wire, and the bidirectional gating device is connected to the second wire. The bidirectional gating device is configured to conduct when a threshold voltage and / or current is applied. The magnetic memory further includes a source wire, which can be electrically connected to the second end of the first wire; The read / write method includes: A first current is supplied to the magnetic memory, the first current flowing through the first wire but not through the memory element, so that the memory element is in a first storage state; A second current is supplied to the magnetic memory, the second current flowing through a selected memory element, causing the selected memory element to change from the first memory state to the second memory state.

11. The read / write method according to claim 10, characterized in that, The magnetic tunnel junction includes: The free layer connected to the first conductor; A non-magnetic insulating layer is disposed on the upper surface of the free layer; A fixed layer is disposed on the upper surface of the non-magnetic insulating layer, wherein the magnetic moment direction of the free layer is variable, and the magnetic moment direction of the fixed layer is fixed. One end of the bidirectional gating device is connected to the fixed layer, and the other end is connected to the second wire; The read / write method includes: The first current and the second current cause the magnetic moment direction of the free layer to change in opposite directions.

12. The read / write method according to claim 11, characterized in that, The first current causes the magnetic moment direction of the free layer to change in the opposite direction to the magnetic moment direction of the fixed layer, and the second current causes the magnetic moment direction of the free layer to change in the same direction as the magnetic moment direction of the fixed layer.

13. The read / write method according to claim 11, characterized in that, The first current causes the magnetic moment direction of the free layer to change in the same direction as the magnetic moment direction of the fixed layer, and the second current causes the magnetic moment direction of the free layer to change in the opposite direction to the magnetic moment direction of the fixed layer.

14. The read / write method according to claim 10, characterized in that, The first wire includes a first end and a second end, and the magnetic memory further includes a plurality of write bit lines and a plurality of first selection transistors, wherein the first selection transistors are configured to electrically connect the first end of the first wire and the write bit lines in response to a first control signal. The read / write method includes: The first selection transistor is controlled by the first control signal, so that the first selection transistor responds to the first control signal and electrically connects the first end of the first wire to the write bit line, so that the first current flows through the first wire.

15. The read / write method according to claim 14, characterized in that, The read / write method includes: the first current flows from the write bit line through the first conductor to the source line, or the first current flows from the source line through the first conductor to the write bit line.

16. The read / write method according to claim 10, characterized in that, The magnetic memory further includes a plurality of bit lines and a plurality of second selection transistors, the second selection transistors being configured to electrically connect the second wires to the bit lines in response to a second control signal; The read / write method includes: The second selection transistor is controlled by the second control signal, so that the second selection transistor responds to the second control signal and electrically connects the second wire to the bit line, so that the second current flows through the selected memory element.

17. The read / write method according to claim 10, characterized in that, The read / write method further includes: during a read operation, providing a third current to the magnetic memory, the third current flowing from the second wire through the storage element to the first wire.

18. The read / write method according to claim 10, characterized in that, Different storage elements are controlled separately via the bidirectional gating device as a control switch; in the step of providing a second current to the magnetic memory, the selected storage element is configured as the storage element when the bidirectional gating device is subjected to a threshold voltage and / or current.

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