Transparent electronic device and method for manufacturing the same

Abstract

A transparent electronic device and a manufacturing method thereof, the transparent electronic device comprising: an organic film, an amorphous transparent carbon oxide layer and a matrix layer. The organic film comprises a polymer containing a carboxyl functional group (-COOH). The amorphous transparent carbon oxide layer is disposed on the organic film, wherein the amorphous transparent carbon oxide layer is composed of metal elements, carbon elements, oxygen elements and other elements, the metal elements are selected from molybdenum (Mo), indium (In), tin (Sn), zinc (Zn), cadmium (Cd) and combinations thereof, and the atomic number percentage of the other elements is equal to or greater than zero and less than the smallest of the atomic number percentage of the metal element, the atomic number percentage of the oxygen element and the atomic number percentage of the carbon element. The matrix layer is located on the amorphous transparent carbon oxide layer.

Description

Technical Field

[0001] The invention relates to a transparent electronic device. Background Art

[0002] In the manufacturing process of the display, in order to make the final display have a carrier with the desired properties, such as a flexible carrier, the substrate (such as a glass substrate) used in the manufacturing process needs to be separated, and then the desired carrier is attached. In order to be able to easily separate the substrate, the current practice is to first form an opaque release metal layer on the substrate, and then form a pixel matrix on the release metal layer. The substrate and the release metal layer under the pixel matrix can be easily separated by the weak bond between the substrate and the release metal layer. However, since the release metal layer is opaque, if the release metal layer under the pixel matrix is ​​not removed, only single-sided light-emitting display products can be produced, and transparent display products cannot be manufactured. Summary of the invention

[0003] The invention provides a transparent electronic device with high light transmittance.

[0004] The invention provides a method for manufacturing a transparent electronic device, which can form a transparent electronic device with high light transmittance without removing an opaque metal layer.

[0005] One embodiment of the present invention provides a transparent electronic device, comprising: an organic film, wherein the organic film includes a polymer containing a carboxyl functional group (-COOH); an amorphous transparent carbon oxide layer, disposed on the organic film, wherein the amorphous transparent carbon oxide layer is composed of metal elements, carbon elements, oxygen elements and other elements, the metal elements are selected from molybdenum (Mo), indium (In), tin (Sn), zinc (Zn), cadmium (Cd) and combinations thereof, and the atomic number percentage of the other elements is equal to or greater than zero and less than the smallest of the atomic number percentage of the metal element, the atomic number percentage of the oxygen element and the atomic number percentage of the carbon element; and a matrix layer, located on the amorphous transparent carbon oxide layer.

[0006] In one embodiment of the transparent electronic device of the present invention, the atomic percentage of carbon in the amorphous transparent carbon oxide layer decreases from the organic film to the matrix layer, and the atomic percentage of oxygen in the amorphous transparent carbon oxide layer increases from the organic film to the matrix layer.

[0007] In one embodiment of the transparent electronic device of the present invention, the average atomic number percentage of metal elements in the first side of the amorphous transparent carbon oxide layer close to the matrix layer is greater than the average atomic number percentage of carbon elements, and the average atomic number percentage of metal elements in the second side of the amorphous transparent carbon oxide layer close to the organic film is greater than or equal to the average atomic number percentage of carbon elements.

[0008] In one embodiment of the transparent electronic device of the present invention, the average atomic number percentage of oxygen elements in the first side of the amorphous transparent carbon oxide layer close to the matrix layer is greater than the average atomic number percentage of carbon elements, and the average atomic number percentage of oxygen elements in the second side of the amorphous transparent carbon oxide layer close to the organic film is less than or equal to the average atomic number percentage of carbon elements.

[0009] In an embodiment of the transparent electronic device of the present invention, the matrix layer includes a plurality of switch elements, and a buffer layer is sandwiched between the matrix layer and the amorphous transparent carbon oxide layer.

[0010] In one embodiment of the transparent electronic device of the present invention, the transparent electronic device further comprises a transparent auxiliary film disposed on a surface of the organic film opposite to the amorphous transparent carbon oxide layer.

[0011] In an embodiment of the transparent electronic device of the present invention, the matrix layer is a pixel layer, and the transparent electronic device is a transparent display device.

[0012] In one embodiment of the transparent electronic device of the present invention, the polymer containing carboxyl functional groups is selected from polyurethane, polymethyl methacrylate, polyester, polyethylene terephthalate and combinations thereof, and the other elements include at least one of calcium, magnesium, aluminum, silicon and barium.

[0013] One embodiment of the present invention provides a method for manufacturing a transparent electronic device, comprising: forming a matrix layer on a first surface of an opaque metal layer; forming an organic film on a second surface of the opaque metal layer to form a stacked layer, wherein the organic film includes a polymer containing a carboxyl functional group; and placing the stacked layer in a processing environment to convert the opaque metal layer into an amorphous transparent carbon oxide layer, wherein the amorphous transparent carbon oxide layer is composed of metal elements, carbon elements, oxygen elements and other elements, the metal elements are selected from molybdenum, indium, tin, zinc, cadmium and combinations thereof, and the atomic number percentage of the other elements is equal to or greater than zero and is less than the smallest of the atomic number percentage of the metal element, the atomic number percentage of the oxygen element and the atomic number percentage of the carbon element.

[0014] In one embodiment of the manufacturing method of the transparent electronic device of the present invention, the temperature of the above-mentioned processing environment is between room temperature and the melting point of the organic film, the relative humidity of the processing environment is between 70% and 100%, and the processing time of the stacked layer in the processing environment is between 1 hour and 100 hours.

[0015] In an embodiment of the method for manufacturing a transparent electronic device of the present invention, the method further comprises forming a buffer layer on the first surface of the opaque metal layer before forming the matrix layer.

[0016] In one embodiment of the method for manufacturing a transparent electronic device of the present invention, the method further comprises forming a transparent auxiliary film on a surface of the organic film opposite to the amorphous transparent carbon oxide layer.

[0017] In one embodiment of the method for manufacturing a transparent electronic device of the present invention, the atomic percentage of carbon element in the amorphous transparent carbon oxide layer decreases from the organic film to the matrix layer, and the atomic percentage of oxygen element in the amorphous transparent carbon oxide layer increases from the organic film to the matrix layer.

[0018] In one embodiment of the manufacturing method of the transparent electronic device of the present invention, the average atomic number percentage of metal elements in the first side of the amorphous transparent carbon oxide layer close to the matrix layer is greater than the average atomic number percentage of carbon elements, and the average atomic number percentage of metal elements in the second side of the amorphous transparent carbon oxide layer close to the organic film is greater than or equal to the average atomic number percentage of carbon elements.

[0019] In one embodiment of the manufacturing method of the transparent electronic device of the present invention, the average atomic number percentage of oxygen elements in the first side of the amorphous transparent carbon oxide layer close to the matrix layer is greater than the average atomic number percentage of carbon elements, and the average atomic number percentage of oxygen elements in the second side of the amorphous transparent carbon oxide layer close to the organic film is less than or equal to the average atomic number percentage of carbon elements.

[0020] In an embodiment of the method for manufacturing a transparent electronic device of the present invention, the matrix layer includes a plurality of switch elements.

[0021] In one embodiment of the method for manufacturing a transparent electronic device of the present invention, the matrix layer is a pixel layer, and the transparent electronic device is a transparent display device.

[0022] In one embodiment of the method for manufacturing a transparent electronic device of the present invention, the above-mentioned polymer containing carboxyl functional groups is selected from polyurethane, polymethyl methacrylate, polyester, polyethylene terephthalate and combinations thereof, and the other elements include at least one of calcium, magnesium, aluminum, silicon and barium.

[0023] In order to make the above features and advantages of the present invention more obvious and easy to understand, embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figures 1A to 1D FIG. 1 is a cross-sectional schematic diagram of the steps of a method for manufacturing a transparent electronic device 10 according to an embodiment of the present invention.

[0025] Figure 2 FIG. 1 is a partial top view of a matrix layer AM of a transparent electronic device 10 according to an embodiment of the present invention.

[0026] Figure 3 FIG. 4 is a transmittance curve diagram of the stacked layer SK of the experimental group and the control group according to an embodiment of the present invention.

[0027] Figure 4 FIG. 4 is a secondary ion mass spectrometry (SIMS) analysis diagram of the amorphous transparent carbon oxide layer TL according to an embodiment of the present invention.

[0028] Description of reference numerals:

[0029] 10: Transparent electronic devices

[0030] AM: Matrix Layer

[0031] BF: Buffer layer

[0032] DL: Signal line

[0033] E11, E12, E13, E21, E31, LE: Display components

[0034] M1, M2: Surface

[0035] ME: opaque metal layer

[0036] O1, O2: Surface

[0037] OF: Organic film

[0038] RF: Transparent auxiliary film

[0039] SB: Substrate

[0040] SK: Stacked Layers

[0041] SL: Signal line

[0042] SP: Sub-Pixel

[0043] SW: Switching element

[0044] T1, T2: Surface

[0045] Ta: The first end

[0046] Tb: Second end

[0047] Tc: Control terminal

[0048] TL: Amorphous transparent carbon oxide layer DETAILED DESCRIPTION

[0049] It should be understood that although the terms "first", "second", "third", etc. can be used to describe various elements, components, regions, layers and / or parts in this article, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, the first "element", "component", "region", "layer" or "part" discussed below can be referred to as a second element, component, region, layer or part without departing from the teachings of this article.

[0050] The terms used herein are for the purpose of describing specific embodiments only and are not restrictive. As used herein, unless the content clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms, including "at least one" or to represent "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items. It should also be understood that when used in this specification, the terms "comprising" and / or "including" specify the presence of the features, regions, wholes, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, parts and / or combinations thereof.

[0051] In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element, as shown in the figures. It should be understood that relative terms are intended to include different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one figure is turned over, the element described as being on the "lower" side of the other elements will be oriented on the "upper" side of the other elements. Therefore, the exemplary term "lower" can include both "lower" and "upper" orientations, depending on the specific orientation of the figure. Similarly, if the device in one figure is turned over, the element described as being "lower" or "below" the other elements will be oriented as being "above" the other elements. Therefore, the exemplary term "lower" or "below" can include both above and below orientations.

[0052] As used herein, "about," "approximately," or "substantially" includes the stated value and an average value within an acceptable deviation range of the particular value determined by one of ordinary skill in the art, taking into account the measurement in question and the particular amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, "about," "approximately," or "substantially" may be selected based on the optical properties, etching properties, or other properties, and may not apply to all properties with one standard deviation.

[0053] Figures 1A to 1D The cross-sectional view of the steps of the manufacturing method of the transparent electronic device 10 according to one embodiment of the present invention is shown in FIG.

[0054] First, please refer to Figure 1A , an opaque metal layer ME is formed on the substrate SB. The opaque metal layer ME may have surfaces M1 and M2, wherein the surface M2 faces the substrate SB. In this embodiment, the substrate SB may be a transparent substrate, and its material may be glass, but the present invention is not limited thereto. In some embodiments, the material of the substrate SB may also be an opaque / reflective material (e.g., a wafer, ceramic, etc.), or other applicable materials.

[0055] The thickness of the opaque metal layer ME may be between 10 nm and 200 nm. For example, in the present embodiment, the thickness of the opaque metal layer ME may be about 50 nm, but is not limited thereto. In some embodiments, the thickness of the opaque metal layer ME may be 20 nm, 100 nm, or 150 nm. In addition, the method for forming the opaque metal layer ME may use a chemical vapor deposition method or a physical vapor deposition method. In the present embodiment, the opaque metal layer ME may be formed by a physical vapor deposition method, for example, the opaque metal layer ME may be formed by a sputtering method. In some embodiments, the method for forming the opaque metal layer ME may further include a photolithography process and an etching process so that the opaque metal layer ME has a desired pattern or profile. The material of the opaque metal layer ME may be selected from molybdenum (Mo), indium (In), tin (Sn), zinc (Zn), cadmium (Cd), and combinations thereof, but is not limited thereto.

[0056] In some embodiments, before forming the opaque metal layer ME, a modified layer (not shown) may be formed on the substrate SB. This modified layer can form a weak bond between the substrate SB and the subsequently formed opaque metal layer ME, thereby facilitating the subsequent separation of the opaque metal layer ME from the substrate SB.

[0057] Next, please refer to Figure 1BIn some embodiments, a buffer layer BF may be first formed on the surface M1 of the opaque metal layer ME, and then a matrix layer AM may be formed on the buffer layer BF, wherein the buffer layer BF may cover the opaque metal layer ME, and the matrix layer AM overlaps with the buffer layer BF. The buffer layer BF may prevent impurities from entering the subsequently formed matrix layer AM, and at the same time avoid unnecessary electrical connection between the opaque metal layer ME and the matrix layer AM. The buffer layer BF may be a single-layer or multi-layer structure, and its material may be an inorganic material (e.g., silicon oxide, silicon nitride, or silicon oxynitride), an organic material (e.g., polyimide (PI), polyethylene terephthalate (PET), or polyethylene naphthalate (PEN)), or other suitable materials. In some embodiments, a protective layer may be formed on the matrix layer AM, and its material may be inorganic material (eg, silicon oxide, silicon nitride, or silicon oxynitride), organic material (eg, polyimide, polyethylene terephthalate, or polyethylene naphthalate), or other suitable materials.

[0058] Please also refer to Figure 2 , Figure 2 1 is a partial top view of a matrix layer AM according to an embodiment of the present invention. In this embodiment, the matrix layer AM may be a pixel layer and include a plurality of sub-pixels SP, so that the transparent electronic device 10 may be used as a transparent display device. The plurality of sub-pixels SP may be arranged in an array, and each sub-pixel SP may include at least one switch element SW, at least one display element LE, and at least two signal lines SL and DL, wherein the switch element SW may include a first end Ta, a second end Tb, and a control end Tc, the first end Ta of the switch element SW may be electrically connected to the display element LE, the second end Tb of the switch element SW may be electrically connected to the signal line DL, and the control end Tc of the switch element SW may be electrically connected to the signal line SL. In some embodiments, the switch element SW may be a thin film transistor, such as a top gate thin film transistor, a bottom gate thin film transistor, or a double gate thin film transistor, but is not limited thereto.

[0059] The signal line SL and the signal line DL can transmit an electrical signal to the switch element SW, the signal line SL is, for example, a scan line, and the signal line DL is, for example, a data line. In the present embodiment, the signal line SL and the signal line DL can be orthogonal to each other, but the present invention is not limited thereto. In some embodiments, the signal line SL and the signal line DL can also intersect at other angles. In some embodiments, each sub-pixel SP may include two or more switch elements SW. In some embodiments, each sub-pixel SP may further include at least one capacitor structure. In the present embodiment, other signal lines such as power lines and common signal lines may be further provided in the matrix layer AM to provide power signals and common signals to each sub-pixel SP.

[0060] In the present embodiment, the display elements LE may be arranged in an array and electrically connected to the first end Ta of the switch element SW. The display elements LE may be electrically connected to one of the plurality of signal lines DL via the switch element SW. The display elements LE (e.g., display elements E11, E12, E13) in the plurality of sub-pixels SP electrically connected to the same signal line DL may emit light of the same color, and the display elements LE (e.g., display elements E11, E21, E31) in the plurality of sub-pixels SP electrically connected to the same signal line SL may emit light of different colors.

[0061] In this embodiment, the display element LE may be a self-luminous element, such as an organic light emitting diode (OLED) or a micro light emitting diode (Micro LED), but the present invention is not limited thereto. In some embodiments, the display element LE may be a non-self-luminous element. For example, the display element LE may include a pixel electrode and a non-self-luminous display medium, such as a liquid crystal layer, wherein the switch element SW may individually control the corresponding pixel electrode to drive the liquid crystal molecules in the liquid crystal layer to change direction.

[0062] Next, please refer to Figure 1C , remove the substrate SB on the surface M2 of the opaque metal layer ME, and then form an organic film OF on the surface M2 of the opaque metal layer ME, for example, make the surface O1 of the organic film OF adhere to the surface M2 of the opaque metal layer ME, to form a stacked layer SK.

[0063] Since the opaque metal layer ME is weakly bonded to the substrate SB, the substrate SB can be removed by mechanical peeling, but the present invention is not limited thereto. In some embodiments, the substrate SB can also be removed by laser oxidation of the opaque metal layer ME. In some embodiments, a laser beam can also be used to simultaneously cut out the overlapping portion of the matrix layer AM, the buffer layer BF, and the opaque metal layer ME above the substrate SB, and then the organic film OF is attached to the surface M2 of the opaque metal layer ME.

[0064] In the present embodiment, the width of the organic film OF is slightly larger than the width of the matrix layer AM, but is not limited thereto. In some embodiments, the width of the organic film OF may be substantially equal to or smaller than the width of the matrix layer AM. In addition, the material of the organic film OF may include a polymer containing a carboxyl functional group (-COOH), such as polyurethane (PU), polymethylmethacrylate (PMMA), polyester, polyethylene terephthalate, or a combination of the above polymers.

[0065] Next, the stacked layer SK is placed in a processing environment for processing to convert the opaque metal layer ME into an amorphous transparent carbon oxide layer TL, thereby forming a Figure 1D The transparent electronic device 10 is shown. Figure 1D In the transparent electronic device 10, the amorphous transparent carbon oxide layer TL is disposed on the organic film OF, and the matrix layer AM is located on the amorphous transparent carbon oxide layer TL. In some embodiments, the organic film OF can also serve as a carrier of the transparent electronic device 10. In some embodiments, a transparent auxiliary film RF can be further formed on the surface O2 of the organic film OF to enhance the support of the transparent electronic device 10. The material of the transparent auxiliary film RF is, for example, glass, polyimide, acrylic, or other appropriate materials.

[0066] Generally speaking, the above-mentioned processing environment can be a high temperature and high humidity environment to promote the carbon atoms and oxygen atoms in the organic film OF and the environment to enter the opaque metal layer ME and react with the metal to form amorphous metal carbide. Specifically, the temperature of the processing environment can be between room temperature and the melting point of the organic film OF, the relative humidity of the processing environment can be between 70% and 100%, and the processing time of the stacked layer SK in the processing environment can be between 1 hour and 100 hours, but not limited thereto, and the processing time can be shortened as the temperature or relative humidity increases, and / or the thickness of the opaque metal layer ME decreases.

[0067] For example, in this embodiment, the opaque metal layer ME in the stacking layer SK is a molybdenum layer with a thickness of about 50 nm, and the organic film OF uses a polyurethane (PU) material as an experimental group, and the stacking layer SK is treated for about 4 hours at a temperature of about 60°C and a relative humidity of about 90%. At the same time, another control stacking layer is designed as a control group for comparison, and the difference between the control stacking layer of the control group and the stacking layer SK of the experimental group is only that the organic film OF is replaced with an epoxy resin film. After the treatment, the transmittance of the stacking layer SK of the experimental group and the control stacking layer of the control group are measured respectively.

[0068] Figure 3 FIG. 1 is a transmittance curve diagram of the stacked layer SK of the experimental group and the control stacked layer of the control group according to an embodiment of the present invention. Figure 3 It can be seen that the transmittance of the control stacking layer of the control group for visible light with a wavelength between 400nm and 800nm ​​is less than 20%. However, the transmittance of the stacking layer SK of the experimental group for visible light with a wavelength between 400nm and 800nm ​​is higher than 80%, which proves that the use of the organic film OF including a polymer containing a carboxyl functional group (-COOH) and the above treatment can indeed transform the opaque metal layer ME into an amorphous transparent carbon oxide layer TL with high transmittance. In some embodiments, when the thickness of the opaque metal layer ME in the stacking layer SK is 20nm, the opaque metal layer ME can be transformed into an amorphous transparent carbon oxide layer TL with high transmittance by treating at 90°C and 90% high temperature and high humidity for about 1 hour.

[0069] Furthermore, the composition of the amorphous transparent carbon oxide layer TL was further analyzed. Figure 4 This is a secondary ion mass spectrometry (SIMS) analysis diagram of the amorphous transparent carbon oxide layer TL according to one embodiment of the present invention. Figure 1D , Figure 4 The X-axis of represents the distance between the composition analysis site in the amorphous transparent carbon oxide layer TL and the surface T1. In other words, Figure 4 The composition change from the surface T1 of the amorphous transparent carbide oxide layer TL close to the organic film OF to the surface T2 close to the matrix layer AM is shown. Figure 4 It can be seen that the atomic number percentage of carbon element in the side of the amorphous transparent carbon oxide layer TL close to the matrix layer AM (i.e., close to the surface T2) is smaller than the atomic number percentage of carbon element in the other side of the amorphous transparent carbon oxide layer TL close to the organic film OF (i.e., close to the surface T1), and the atomic number percentage of oxygen element in the side of the amorphous transparent carbon oxide layer TL close to the matrix layer AM (i.e., close to the surface T2) is greater than the atomic number percentage of oxygen element in the other side of the amorphous transparent carbon oxide layer TL close to the organic film OF (i.e., close to the surface T1). In other words, the atomic number percentage of carbon element in the amorphous transparent carbon oxide layer TL generally decreases from the organic film OF to the matrix layer AM, and the atomic number percentage of oxygen element in the amorphous transparent carbon oxide layer TL generally increases from the organic film OF to the matrix layer AM.

[0070] In addition, from Figure 4It can also be seen that the average atomic percentage of the molybdenum element in the side of the amorphous transparent carbon oxide layer TL close to the matrix layer AM is greater than the average atomic percentage of the carbon element, and the average atomic percentage of the molybdenum element in the other side of the amorphous transparent carbon oxide layer TL close to the organic film is greater than or equal to the average atomic percentage of the carbon element. In other words, the atomic percentage of the molybdenum element is generally greater than the atomic percentage of the carbon element at each location in the amorphous transparent carbon oxide layer TL. Furthermore, the average atomic percentage of the oxygen element in the side of the amorphous transparent carbon oxide layer TL close to the matrix layer AM is greater than the average atomic percentage of the carbon element, and the average atomic percentage of the oxygen element in the other side of the amorphous transparent carbon oxide layer TL close to the organic film OF can be less than or equal to the average atomic percentage of the carbon element. It can be seen that the oxygen element mainly diffuses from the surface T1 close to the organic film OF to the surface T2 close to the matrix layer AM. In addition, after the opaque metal layer ME is converted into the amorphous transparent carbon oxide layer TL by carbon oxidation, the thickness also increases slightly.

[0071] like Figure 4 As shown, in the amorphous transparent carbon oxide layer TL, in addition to metal elements, carbon elements and oxygen elements, there may be other elements from impurities or additives, such as calcium (Ca), magnesium (Mg), aluminum (Al), silicon (Si) or barium (Ba) and the like, and the atomic number percentage of these other elements is usually less than the atomic number percentage of the metal elements, the atomic number percentage of the oxygen element and the atomic number percentage of the carbon element. That is to say, these other elements are only present in the amorphous transparent carbon oxide layer TL in very small or almost negligible amounts, and therefore, the atomic number percentage of these other elements may be equal to zero or greater than zero, and the atomic number percentage of these other elements is less than the smallest of the atomic number percentage of the metal elements, the atomic number percentage of the oxygen element and the atomic number percentage of the carbon element. Figure 4 The SIMS analysis results show that in the amorphous transparent carbide oxide layer TL, the sum of the atomic percentage of the metal element, the atomic percentage of the oxygen element, the atomic percentage of the carbon element, and the atomic percentage of other elements is 100%.

[0072] In summary, the transparent electronic device and the manufacturing method thereof of the present invention utilizes an organic film containing a carboxyl functional group (-COOH) to transform an opaque metal layer into an amorphous transparent carbon oxide layer. Therefore, a transparent electronic device with high light transmittance can be manufactured without removing the opaque metal layer.

[0073] Although the present invention has been disclosed as above by way of embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some changes and modifications without departing from the concept and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the claims.

Claims

1. A transparent electronic device, comprising: An organic film, wherein the organic film comprises a polymer containing carboxyl functional groups; an amorphous transparent carbon oxide layer disposed on the organic film, wherein the amorphous transparent carbon oxide layer is composed of metal elements, carbon elements, oxygen elements and other elements, the metal elements are selected from molybdenum, indium, tin, zinc, cadmium and combinations thereof, and the atomic number percentage of the other elements is equal to or greater than zero and less than the smallest of the atomic number percentage of the metal element, the atomic number percentage of the oxygen element and the atomic number percentage of the carbon element; and A matrix layer is located on the amorphous transparent carbon oxide layer, wherein the atomic percentage of carbon element in the amorphous transparent carbon oxide layer decreases from the organic film to the matrix layer, and the atomic percentage of oxygen element in the amorphous transparent carbon oxide layer increases from the organic film to the matrix layer.

2. A transparent electronic device, comprising: An organic film, wherein the organic film comprises a polymer containing carboxyl functional groups; an amorphous transparent carbon oxide layer disposed on the organic film, wherein the amorphous transparent carbon oxide layer is composed of metal elements, carbon elements, oxygen elements and other elements, the metal elements are selected from molybdenum, indium, tin, zinc, cadmium and combinations thereof, and the atomic number percentage of the other elements is equal to or greater than zero and less than the smallest of the atomic number percentage of the metal element, the atomic number percentage of the oxygen element and the atomic number percentage of the carbon element; and A matrix layer is located on the amorphous transparent carbon oxide layer, wherein the average atomic number percentage of the metal element in the first side of the amorphous transparent carbon oxide layer close to the matrix layer is greater than the average atomic number percentage of the carbon element, and the average atomic number percentage of the metal element in the second side of the amorphous transparent carbon oxide layer close to the organic film is greater than or equal to the average atomic number percentage of the carbon element.

3. A transparent electronic device, comprising: An organic film, wherein the organic film comprises a polymer containing carboxyl functional groups; an amorphous transparent carbon oxide layer disposed on the organic film, wherein the amorphous transparent carbon oxide layer is composed of metal elements, carbon elements, oxygen elements and other elements, the metal elements are selected from molybdenum, indium, tin, zinc, cadmium and combinations thereof, and the atomic number percentage of the other elements is equal to or greater than zero and less than the smallest of the atomic number percentage of the metal element, the atomic number percentage of the oxygen element and the atomic number percentage of the carbon element; and A matrix layer is located on the amorphous transparent carbon oxide layer, wherein the average atomic number percentage of oxygen elements in the first side of the amorphous transparent carbon oxide layer close to the matrix layer is greater than the average atomic number percentage of carbon elements, and the average atomic number percentage of oxygen elements in the second side of the amorphous transparent carbon oxide layer close to the organic film is less than or equal to the average atomic number percentage of carbon elements.

4. The transparent electronic device according to any one of claims 1 to 3, wherein: The matrix layer includes a plurality of switch elements, and a buffer layer is sandwiched between the matrix layer and the amorphous transparent carbon oxide layer. 5 . The transparent electronic device according to claim 1 , further comprising a transparent auxiliary film disposed on a surface of the organic film opposite to the amorphous transparent carbon oxide layer.

6. The transparent electronic device according to any one of claims 1 to 3, wherein: The matrix layer is a pixel layer, and the transparent electronic device is a transparent display device.

7. The transparent electronic device according to any one of claims 1 to 3, wherein: The polymer containing carboxyl functional groups is selected from polyurethane, polymethyl methacrylate, polyester, polyethylene terephthalate and combinations thereof, and the other elements include at least one of calcium, magnesium, aluminum, silicon and barium.

8. A method for manufacturing a transparent electronic device, comprising: forming a matrix layer on the first surface of the opaque metal layer; forming an organic film on the second surface of the opaque metal layer to form a stacked layer, wherein the organic film comprises a polymer containing a carboxyl functional group; as well as The stacked layer is placed in a processing environment to convert the opaque metal layer into an amorphous transparent carbon oxide layer, wherein the amorphous transparent carbon oxide layer is composed of metal elements, carbon elements, oxygen elements and other elements, the metal elements are selected from molybdenum, indium, tin, zinc, cadmium and combinations thereof, and the atomic number percentage of the other elements is equal to or greater than zero and less than the smallest of the atomic number percentage of the metal element, the atomic number percentage of the oxygen element and the atomic number percentage of the carbon element.

9. The method for manufacturing a transparent electronic device according to claim 8, wherein: The temperature of the processing environment is between room temperature and the melting point of the organic film, the relative humidity of the processing environment is between 70% and 100%, and the processing time of the stacked layer in the processing environment is between 1 hour and 100 hours. 10 . The method for manufacturing a transparent electronic device as claimed in claim 8 , further comprising forming a buffer layer on the first surface of the opaque metal layer before forming the matrix layer. 11 . The method for manufacturing a transparent electronic device as claimed in claim 8 , further comprising forming a transparent auxiliary film on a surface of the organic film opposite to the amorphous transparent carbon oxide layer.

12. The method for manufacturing a transparent electronic device according to claim 8, wherein: The atomic percentage of carbon in the amorphous transparent carbon oxide layer decreases from the organic film to the matrix layer, and the atomic percentage of oxygen in the amorphous transparent carbon oxide layer increases from the organic film to the matrix layer.

13. The method for manufacturing a transparent electronic device according to claim 8, wherein: The average atomic number percentage of the metal element in the first side of the amorphous transparent carbon oxide layer close to the matrix layer is greater than the average atomic number percentage of the carbon element, and the average atomic number percentage of the metal element in the second side of the amorphous transparent carbon oxide layer close to the organic film is greater than or equal to the average atomic number percentage of the carbon element.

14. The method for manufacturing a transparent electronic device according to claim 8, wherein: The average atomic number percentage of oxygen elements in the first side of the amorphous transparent carbon oxide layer close to the matrix layer is greater than the average atomic number percentage of carbon elements, and the average atomic number percentage of oxygen elements in the second side of the amorphous transparent carbon oxide layer close to the organic film is less than or equal to the average atomic number percentage of carbon elements.

15. The method for manufacturing a transparent electronic device according to claim 8, wherein: The matrix layer includes a plurality of switching elements.

16. The method for manufacturing a transparent electronic device according to claim 8, wherein: The matrix layer is a pixel layer, and the transparent electronic device is a transparent display device.

17. The method for manufacturing a transparent electronic device according to claim 8, wherein: The polymer containing carboxyl functional groups is selected from polyurethane, polymethyl methacrylate, polyester, polyethylene terephthalate and combinations thereof, and the other elements include at least one of calcium, magnesium, aluminum, silicon and barium.

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