Light emitting display device

Abstract

A light emitting display device is disclosed that prevents pixel shrinkage and improves reliability by changing the structure of a bank outside a doted area and the internal structure of a light emitting device. The light emitting display device can include a substrate having an active area and a non-active area; a plurality of light emitting devices disposed in sub-pixels within the active area; a voltage line disposed within the non-active area along an edge of the active area of the substrate; and a bank that exposes a light emitting portion of the light emitting device through a plurality of first holes in the active area and exposes the voltage line through a second hole in the non-active area, wherein an electron injection layer of the light emitting device is disposed over the entire active area and extends to the non-active area and is disposed inside the second hole.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2020-0190050, filed on December 31, 2020, which is incorporated herein by reference as if fully set forth herein. Technical Field

[0002] The present invention relates to a display device, and more specifically, to a light-emitting display device that can prevent pixel shrinkage and improve the reliability of the device by changing the structure outside the active region. Background Technology

[0003] Recently, self-emissive display devices are being considered as a competitive application, as they achieve compactness and clear color display without the need for a separate light source.

[0004] Self-emissive display devices include light-emitting devices that are individually driven in each sub-pixel. Light-emitting devices can be classified into organic light-emitting devices and inorganic light-emitting devices based on the materials used in them.

[0005] In display devices that include organic light-emitting devices, the internal organic layer is susceptible to moisture and other factors. As a result, the reliability and lifespan of the display device are reduced due to moisture penetration into the interior. Summary of the Invention

[0006] Therefore, the present invention aims to provide a light-emitting display device that substantially overcomes one or more problems caused by the limitations and disadvantages of related technologies, the light-emitting display device being configured to prevent pixel shrinkage and improve reliability by changing the structure of the embankment outside the active region and the internal structure of the light-emitting device.

[0007] One object of the present invention is to provide a light-emitting display device that prevents moisture from penetrating through the diaphragm hole by changing the structure of the diaphragm hole outside the active region and the construction of the extension of each layer of the light-emitting device. The diaphragm hole is configured to correspond to the power supply voltage line so as to apply a power supply voltage signal to the cathode.

[0008] Additional advantages, objects, and features of the invention will be set forth in part in the description which follows, and some of these advantages, objects, and features will become apparent to those skilled in the art upon review of the following description or will be understood by practice of the invention. These objects and other advantages of the invention can be realized and obtained through the structures specifically pointed out in the specification, claims, and drawings.

[0009] To achieve these objectives and other advantages and in accordance with the intent of the invention, as embodied and generally described herein, according to one aspect of the invention, a light-emitting display device is disclosed, comprising: a substrate configured to have an active region and an active region; a plurality of light-emitting devices disposed in sub-pixels within the active region; a first voltage line disposed along the edge of the active region of the substrate within the active region; and a dam that exposes the light-emitting portions of the light-emitting devices through a plurality of first holes formed in the active region and exposes the first voltage line through second holes formed in the active region, wherein the cathodes of the light-emitting devices are connected to the first voltage line through the second holes.

[0010] According to another aspect of the present invention, a light-emitting display device is disclosed, comprising: a substrate having an active region and an active region; a plurality of light-emitting devices disposed in sub-pixels within the active region; a voltage line disposed along the edge of the active region of the substrate within the active region; and a dam that exposes the light-emitting portions of the light-emitting devices through a plurality of first holes in the active region and exposes the voltage line through second holes in the active region, wherein an electron injection layer of the light-emitting devices is disposed over the entire active region, extends into the active region, and is disposed within the second holes.

[0011] It should be understood that the foregoing general description and the following detailed description of the invention are illustrative and explanatory, and are intended to provide further explanation of the claimed invention. Attached Figure Description

[0012] The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.

[0013] In the attached diagram:

[0014] Figure 1 This is a plan view illustrating a light-emitting display device according to an embodiment of the present invention.

[0015] Figure 2 It is along Figure 1 The line I-I' intercepted Figure 1 Cross-sectional view.

[0016] Figure 3A and Figure 3B It is a diagram Figure 2 The cross-sectional views of regions A and B are shown.

[0017] Figure 4Aand Figure 4B This diagram illustrates a light-emitting display device according to another embodiment of the present invention. Figure 2 The cross-sectional views of regions A and B are shown.

[0018] Figure 5 This is a circuit diagram of each sub-pixel of a light-emitting display device according to an embodiment of the present invention.

[0019] Figure 6 yes Figure 1 The cross-sectional view shown is of a straight region with width c.

[0020] Figure 7 and Figure 8 This is a cross-sectional view illustrating a variant of the light-emitting display device according to the present invention.

[0021] Figure 9 This is a cross-sectional view illustrating an example of a region, in which... Figure 1 The second hole shown in the diagram traverses the third width of the embankment. Detailed Implementation

[0022] Reference will now be made in detail to exemplary embodiments of the invention, some examples of which are illustrated in the accompanying drawings. In the following description of the embodiments and drawings, the same or similar elements are denoteed by the same reference numerals throughout the application. In the following description of embodiments of the invention, detailed descriptions of known functions and constructions involved herein will be omitted where such detailed descriptions would obscure the gist of the invention. Furthermore, the names of elements used in the following description of embodiments of the invention have been chosen for ease of preparation of the specification, and therefore these names may differ from the names of parts of the actual product.

[0023] The shapes, dimensions, proportions, angles, and quantities given in the accompanying drawings for the purpose of describing embodiments of the invention are merely examples, and therefore the invention is not limited to the details illustrated. In the following description of embodiments, the terms "comprising," "including," and "having" should be interpreted as indicating the presence of one or more features, quantities, steps, operations, elements, or portions or combinations thereof described in this application, without excluding the presence of other features, quantities, steps, operations, elements, portions, or combinations thereof, or without excluding the possibility of adding other features, quantities, steps, operations, elements, portions, or combinations thereof, unless the term "only" is used.

[0024] When interpreting the elements included in the various embodiments of the present invention, it should be interpreted that the elements include a range of error, unless otherwise stated.

[0025] In the following description of the implementation, it will be understood that when expressing positional relationships, for example, when one element is described as being “above,” “over,” “below,” or “next to” another element, the two elements may be in direct contact with each other, or one or more other elements may be inserted between the two elements, unless the terms “exactly” or “directly” are used.

[0026] In the following description of the implementation, it will be understood that when expressing temporal relationships, for example when using terms that express the order of events, such as “after,” “following,” “next,” and “before,” these terms cover both sequential and discontinuous relationships between events, unless the terms “exactly” or “directly” are used.

[0027] In the following description of the embodiments, it will be understood that when the terms "first," "second," etc., are used to describe various elements, these terms are only used to distinguish the same or similar elements. Therefore, without departing from the technical scope of the present invention, the first element described below may be referred to as the second element.

[0028] The various features of the various embodiments of the present invention can be combined or integrated with each other in part or in whole, and can be interlocked or driven in various technical ways. The various embodiments can be implemented independently of each other, or can be implemented together through the connection between them.

[0029] The light-emitting display device according to the present invention will be described below.

[0030] Figure 1 This is a plan view illustrating a light-emitting display device according to an embodiment of the present invention. Figure 2 It is along Figure 1 The line I-I' intercepted Figure 1 Cross-sectional view, Figure 3A and Figure 3B It is a diagram Figure 2 The cross-sectional views of regions A and B are shown.

[0031] like Figure 1 and Figure 2As shown, a light-emitting display device 1000 according to an embodiment of the present invention may include: a substrate 100 having an active region AA and an active region NA; light-emitting devices OLEDs respectively disposed in a plurality of sub-pixels in the active region AA; a first power supply voltage line 106c disposed along the edge of the active region AA in the active region NA; and a dam 120 configured to expose the light-emitting portion of each light-emitting device OLED through a plurality of first holes EMP in the active region AA and to expose the first power supply voltage line 106c through a second hole BCT in the active region NA, wherein the electron injection layer EIL of the light-emitting device OLED may extend from the active region AA and be disposed at least in the second hole BCT in the active region NA.

[0032] In other words, the electron injection layer (EIL) is formed to directly contact the side of the embankment 120 exposed inside the second borehole BCT, thereby preventing some moisture remaining in the second borehole BCT during external moisture inflow or cooling from permeating through the embankment 120. The electron injection layer (EIL) is formed to overlap with the second borehole BCT, thus protecting the second borehole BCT and its surrounding area.

[0033] The electron injection layer EIL is not only formed on the side of the second hole BCT, but also extends further to the upper surface of the embankment 120 around the second hole BCT. That is, the electron injection layer EIL can contact the embankment 120 on the side of the second hole BCT and the upper part of the embankment 120 in the non-active region NA, thereby protecting the upper surface of the embankment 120.

[0034] An electron injection layer EIL can be formed in the same chamber as the cathode (CAT) 200 of the OLED and / or using the same mask as the cathode 200 of the OLED, with the cathode 200 disposed on the electron injection layer EIL.

[0035] The second aperture BCT is generally configured such that the cathode 200 overlaps with the first power supply voltage line 106c. The first power supply voltage line 106c can be connected to the cathode 200 through an electron injection layer EIL inside the second aperture BCT. For conductive connection purposes, the electron injection layer EIL comprises an inorganic material or inorganic compound containing a metal. For example, the electron injection layer EIL may include at least one of LiF, Yb, Ag, and Mg, and may also include some components of the cathode 200. The electron injection layer EIL is used to facilitate the injection of electrons from the cathode 200 into the organic layer OS inside the OLED. For this purpose, the electron injection layer EIL may include a metal with low interfacial resistance and low work function relative to the organic layer OS. Furthermore, the electron injection layer EIL is not formed to be excessively thick, thereby preventing an increase in the conductive connection resistance between the cathode 200 and the first power supply voltage line 106c disposed below it.

[0036] The function of the electron injection layer EIL in the light-emitting display device 1000 according to the present invention will now be briefly described.

[0037] For example, if the electron injection layer EIL includes ytterbium (Yb), when moisture flows into the second pore BCT, ytterbium (Yb) reacts with hydroxyl groups to produce hydrogen molecules, as described in Formula 1 below. The hydrogen molecules are released to the outside, thereby eliminating the effect of moisture.

[0038] Furthermore, if the electron injection layer EIL includes lithium fluoride (LiF), when moisture flows into the second pore BCT, the lithium fluoride (LiF) is electrically separated into lithium (Li) and fluorine (F). The lithium (Li) reacts with hydroxyl groups to produce hydrogen fluoride (HF), which is released to the outside as described in Formula 2 below, thereby eliminating the effect of moisture.

[0039] [Formula 1]

[0040] 2Yb + 6H₂O → 2Yb(OH)₃ + 3H₂

[0041] [Formula 2]

[0042] LiF + H₂O → LiOH + HF

[0043] In other words, in the light-emitting display device 1000 according to the present invention, the electron injection layer EIL formed to cover the second hole BCT reacts with moisture from the outside or moisture generated during the cooling process and releases hydrogen or hydrogen fluoride (HF) to the outside, thereby eliminating the influence of moisture and preventing shrinkage of the light-emitting part of the sub-pixel due to moisture.

[0044] Figure 1 The shape of the embankment 120 of the light-emitting display device is illustrated. The embankment 120 can be formed as a single piece, such as... Figure 1As shown, the dam 120 may have a first hole (EMP) and a second hole (BCT), which are formed in the internal region of the dam 120 and separated from each other. The dam 120 is formed of an insulating organic material and has an end line (BEL) of a specified width that is inwardly separated from the edge of the substrate 100. The reason for separating the end line (BEL) of the dam 120 from the edge of the substrate 100 is to prevent the side of the edge of the dam 120, which is formed of organic material, from directly contacting the ambient air and to prevent moisture penetration. Furthermore, the second hole (BCT) is not formed in the region of the dam 120 corresponding to the pad portion (PAD). The side of the dam 120 where the pad portion (PAD) is formed may have an end line (BEL) that is further inwardly disposed than the other sides of the dam 120, so as to realize the connection between the pad electrode (not shown) of the pad portion (PAD) and the driver integrated circuit (IC) or the flexible printed circuit board (FPCB) including the driver IC. In this case, the pad electrodes and the first power supply voltage line 106c on the substrate 100, where the embankment 120 has been removed, can be connected to each other in the pad portion PAD.

[0045] The first aperture EMP corresponding to the light-emitting portion in the active region AA is separated from each other in the dam portion 120. The dam portion 120 is disposed in the active region AA except for the first aperture EMP, and the light-emitting device OLED emits light through the first aperture EMP. The dam portion 120 surrounds the first aperture EMP, and the light-emitting portion and the non-light-emitting portion can be distinguished from each other by the height difference between them. The size of the first aperture EMP can vary depending on the color of the light emitted by the sub-pixel. For example, the first aperture EMP in the blue sub-pixel can have a larger size than the first aperture EMP in the green sub-pixel or the first aperture EMP in the red sub-pixel. The size of the first aperture EMP in each sub-pixel can be adjusted taking into account the luminous efficiency of each light-emitting device OLED, the required driving voltage, and human color perception.

[0046] The second hole (BCT) is integrally disposed within the non-active region (NA) excluding the pad portion (PAD). The first power supply voltage line 106c is disposed below the second hole (BCT), and the cathode 200 of the OLED is connected to the upper part of the second hole (BCT) and forms a conductive state therewith. The first power supply voltage line 106c extends to the pad portion (PAD), thus enabling it to receive signals applied from a driver connected to the pad portion (PAD).

[0047] The signal applied to the first power supply voltage line 106c is a ground voltage or a low power supply voltage signal, and the cathode 200 can maintain a specified potential by the ground voltage or low power supply voltage signal applied to the cathode 200.

[0048] The light-emitting device OLED is selectively driven by receiving electrical signals via thin-film transistors (TFTs) connected to anodes 100 patterned according to each sub-pixel, and thus performs light emission from the respective sub-pixel.

[0049] For example, such as Figure 2 As shown, the thin-film transistor (TFT) includes a gate electrode 102, a semiconductor layer 104 overlapping the gate electrode 102, and a source electrode 106a and a drain electrode 106b connected to both sides of the semiconductor layer 104.

[0050] A gate insulating film 103 is disposed between the gate electrode 102 and the semiconductor layer 104, and a channel protection layer 105 is disposed on the channel of the semiconductor layer 104. When the semiconductor layer 104 is connected to the source electrode 106a and the drain electrode 106b, the channel protection layer 105 protects the channel.

[0051] Semiconductor layer 104 may include at least one of oxide semiconductor layer, polycrystalline silicon layer, and amorphous silicon layer, and in some cases, semiconductor layer 104 may be formed by stacking two or more layers formed of the same or different materials among the above materials.

[0052] A first planarization film 107 can be provided to protect the thin-film transistor TFT. A first contact hole CT1 can be formed through the first planarization film 107 to expose the source electrode 106a of the thin-film transistor TFT.

[0053] In addition, a first connecting metal pattern 109 may be provided, which is connected to the source electrode 106a through the first contact hole CT1.

[0054] In addition, a second planarization film 108 may be provided to cover the first connecting metal pattern 109, and a second contact hole CT2 may be formed through the second planarization film 108 to expose the first connecting metal pattern 109.

[0055] An anode 110 is configured to be connected to the first connecting metal pattern 109 via a second contact hole CT2 and a first contact hole CT1.

[0056] Here, all components disposed below the light-emitting device OLED, i.e. below the anode 110, can form a thin-film transistor array substrate 500. The thin-film transistor array substrate 500 may include thin-film transistors (TFTs), a gate insulating film 103 disposed between the electrodes of the thin-film transistors (TFTs), a first planarization film 107, a second planarization film 108, and a first connecting metal pattern 109.

[0057] When forming the thin-film transistor array substrate 500, a signal line 102a may be further provided in the same layer as the gate electrode 102, and a first power supply voltage line 106c may be further provided in the same layer as the source electrode 106a and the drain electrode 106b.

[0058] Although the description focuses on the wire connected to cathode 200, Figure 2 The first power supply voltage line 106c is illustrated separately, but it can be further configured to transmit voltages other than low power supply voltage signals or ground voltage, i.e., other power supply voltage lines that transmit high power supply voltages or reference voltages.

[0059] The first power supply voltage line 106c can be disposed in the same layer as the source electrode 106a and the drain electrode 106b, as shown in the figure, or it can be disposed in the same layer as the gate electrode 102.

[0060] Signal line 102a can be connected to a gate line disposed in the active region AA, or it can be connected to a gate driver GIP disposed in the non-active region NA located on both sides of the active region AA.

[0061] The thin-film transistors (TFTs) connected to the light-emitting device (OLED) are essentially driving TFTs. Besides driving TFTs, other TFTs, such as switching TFTs, can also be provided. To enable the driving and switching TFTs to exhibit different functions, at least one of the electrodes of the driving and switching TFTs can be located in different layers. For example, a metal pattern disposed in the same layer as the first connection metal pattern 109 located on the first planarization film 107 can be used as an electrode for the driving and other TFTs. In some cases, the first connection metal pattern 109 can be omitted, and the anode 110 can be directly connected to the source electrode 106a.

[0062] A second connection metal pattern 109c, connected to the first power supply voltage line 106c, may be further disposed in the same layer as the first connection metal pattern 109. The second connection metal pattern 109c is located on the inner side and bottom surfaces of the first trench hole TRT1, which forms and exposes the first power supply voltage line 106c through the first planarization film 107, and on the first planarization film 107 surrounding the first trench hole TRT1. The second connection metal pattern 109c may be continuously disposed in the first trench hole TRT1 and on the first planarization film 107. The second connection metal pattern 109c may be electrically connected to the first power supply voltage line 106c disposed below it, and forms a stacked structure inside the first trench hole TRT1 with the first power supply voltage line 106c and the connection pattern 110a on the second connection metal pattern 109c. In some cases, the second connection metal pattern 109c may be omitted, and the connection pattern 110a may be directly connected to the first power supply voltage line 106c.

[0063] A second trench hole TRT2 is formed at the position where it overlaps with the first trench hole TRT1 through the second planarization film 108, thereby exposing the second connecting metal pattern 109c, and the connecting pattern 110a is located on the inner sidewall of the second trench hole TRT2 and on the second connecting metal pattern 109c inside the first trench hole TRT1.

[0064] The connection pattern 110a is formed through the same process as the anode 110 and the anode dummy pattern 110b. The connection pattern 110a may be configured to achieve a conductive connection with the first power supply voltage line 106c, and the anode dummy pattern 110b may be a pattern configured to check the surrounding environment of the active region AA or to achieve a connection with other signals.

[0065] The substrate 100 may have at least four corners, such as Figure 1 As shown in the figure, the corner may have a curved shape as shown, or it may have a shape formed by two intersecting straight lines. A straight region may be provided between two curved corners. Figure 1 As shown, when the edge of the substrate 100 bends at its corner, the components disposed within the substrate 100 can also bend at their corners.

[0066] Although the second via BCT is integrated within the non-active region NA (excluding the pad area), the second via BCT can have different widths depending on the region, such as... Figure 1is shown in. That is, the second hole BCT has a first width a in a region of the non-active area NA opposite to the pad portion PAD, has a second width b at a corner portion of the non-active area NA connected to the region of the non-active area NA configured to have the first width a, has a third width c in a region of the non-active area NA connected to the corner portion of the non-active area NA configured to have the second width b and configured to correspond to both sides of the substrate 100, and has a fourth width d at a corner portion of the non-active area NA connected to the region of the non-active area NA configured to have the third width c and closest to the pad portion PAD.

[0067] The second width b and the fourth width d of the second hole BCT at the corner portions of the non-active area NA are greater than the first width a and the third width c of the second hole BCT in the straight regions of the non-active area NA, for the following reason: the second hole BCT of the bank portion 120 overlaps with the first trench hole TRT1 and the second trench hole TRT2 at the corner portions of the substrate 100, so as to achieve a direct conductive connection between the first power supply voltage line 106c and the connection pattern 110a via the plurality of organic films 120, 108 and 107. The width of each of the first trench hole TRT and the second trench hole may be smaller than the width of the second hole BCT, and the first trench hole TRT and the second trench hole TRT may have different widths. In addition, at the corner portions, the first trench hole TRT1 and the second trench hole TRT2 in the region adjacent to the gate driver GIP built in the substrate 100 can serve as moisture release paths in the first planarization film 107 and the second planarization film 108, and in order to achieve sufficient overlap between the first trench hole TRT1 and second trench hole TRT2 and the second hole BCT in these regions serving as moisture release paths, the width of the second hole BCT at the corner portions can be greater than the width of the second hole BCT in the straight regions.

[0068] The respective widths a, b, c and d of the second hole BCT may satisfy the relationships a<c (between straight regions) and b<d (between corner portions). However, the respective widths a, b, c and d of the second hole BCT are not limited thereto, the widths a and c of the second hole BCT in the straight regions may be equal, and the widths b and d of the second hole BCT at the corner portions may be equal.

[0069] In addition, in the light-emitting display apparatus 1000 according to the present invention, even the widths b and d of the second hole BCT at the corner portions do not exceed 100 μm, so that moisture can be prevented from penetrating through the second hole BCT disposed close to the edge of the substrate 100. The importance of the width of the second hole BCT will be illustrated by the test described below.

[0070] As shown in Figure 3AAs shown, the light-emitting device OLED includes an organic layer OS located between an anode 110 and a cathode 200 disposed opposite to each other. The organic layer OS may include a hole injection layer HIL, a hole transport layer HTL, a light-emitting layer EML, and an electron transport layer ETL.

[0071] The cathode 200 includes an electron injection layer EIL of relatively small thickness formed thereunder, and the electron injection layer EIL is formed of an inorganic material or an inorganic compound. That is, the cathode 200 and the electron injection layer EIL can be formed in the same chamber. In this case, the mask for forming the cathode 200 extends to the entire active region AA and extends to the non-active region NA and has an opening in at least the region corresponding to the second aperture BCT, and the electron injection layer EIL and the cathode 200 are formed by supplying material through the opening of the mask. In this case, in addition to a metal material supply unit configured to supply metal material for the cathode 200 in the chamber for forming the cathode 200, an electron injection material supply unit is further provided, and the electron injection layer EIL and the cathode 200 are formed sequentially by first depositing electron injection material from the electron injection material supply unit on the substrate 100, and then depositing metal material for the cathode 200 thereon.

[0072] The cathode metal material can be, for example, Mg, Mg alloy, Ag, or Ag alloy, and can achieve reflective resonance with the anode 110. However, the cathode metal material is not limited to this and can include any semi-transparent, semi-reflective metal material that can transmit light under optimal resonance conditions. Furthermore, the electron injection material can be, for example, a compound including at least one of LiF, Yb, Ag, and Mg. To further enhance the UV blocking effect and / or electron injection effect, other inorganic materials can be provided.

[0073] The electron injection layer EIL according to the invention is formed using the same mask inside the same chamber as the cathode 200, and thus can have the same terminal lines as the cathode 200.

[0074] Furthermore, the light-emitting display device 1000 according to the present invention has an electron injection layer EIL formed having the same width as the cathode 200. Therefore, as Figure 3B As shown, the electron injection layer EIL, which is formed together with the cathode 200, extends to the non-active region NA, thereby covering the second hole BCT and thus protecting the interior of the second hole BCT as well as the side structures of the first trench hole TRT1 and the second trench hole TRT2 formed below the second hole BCT.

[0075] and Figure 3ACompared to the OLED structure shown, to prevent resistance when the first power supply voltage line 106c and the connection pattern 110a are connected, the hole injection layer HIL, hole transport layer HTL, and electron transport layer ETL, which serve as common layers, are not provided inside the second hole BCT in the non-active region NA. Figure 3B As shown in the image.

[0076] Throughout the operation, the electron injection layer (EIL) is formed to have a thickness 200 greater than that of the cathode (for...). to A small thickness, and formed 200 below the cathode with a thickness less than or equal to approximately The thickness of the electron injection layer EIL is also considered. Furthermore, because the electron injection layer EIL is formed using the same mask within the same cavity as the cathode 200, it has the same width and dimensions as the cathode 200. Therefore, the electron injection layer EIL below the cathode 200 directly contacts the embankment 120 located on the side of the second hole BCT, thereby preventing moisture from penetrating into the side of the embankment 120 exposed inside the second hole BCT. For example, when moisture penetrates into the second hole BCT, which has a larger width, the light-emitting portion of the sub-pixel in the active region AA adjacent to the second hole BCT shrinks, thus shortening the sub-pixel's lifetime. Therefore, in the light-emitting display device 1000 according to the present invention, the width of the second hole BCT, which may cause moisture penetration, is reduced to less than or equal to a specified value, and the electron injection layer EIL below the cathode 200 extends corresponding to the second hole BCT, thereby protecting the second hole BCT.

[0077] The electron injection layer EIL below the cathode 200 is located on the connection pattern 110a and the second connection metal pattern 109c on the side of the second trench hole TRT2 and the first trench hole TRT1 inside the second hole BCT, thereby protecting the first planarization film 107 and the second planarization film 108 at the bottom of the second hole BCT from exposure and external moisture.

[0078] The importance of the width of the second hole BCT and the thickness of the electron injection layer EIL will be described below using high accelerated stress testing (HAST).

[0079] In HAST, the light-emitting display device is placed under harsh conditions, such as a temperature of 110°C, humidity of 85%, and atmospheric pressure of 1.2 atm, for a specified time. In the test cases, HAST was performed for 48 hours and 96 hours.

[0080] [Table 1]

[0081]

[0082] For reference, Table 1 shows that HAST was executed 30 times under each condition to determine if a failure occurred, and the number of HAST attempts that failed was recorded.

[0083] As listed in Table 1 above, it can be confirmed that when the width of the second hole BCT is greater than or equal to 102 μm, all 48-hour HAST attempts fail regardless of the thickness of the electron injection layer EIL.

[0084] Furthermore, it was confirmed that when the width of the second well BCT was 80 μm, no failures occurred in any of the 48-hour HAST attempts, regardless of the thickness of the electron-injected layer EIL, and this was also true when the thickness of the electron-injected layer EIL was less than or equal to... At that time, some HAST attempts failed after 96 hours; when the thickness of the electron injection layer EIL exceeded At that time, all HAST attempts over 96 hours did not fail.

[0085] HAST is a test that accelerates the light-emitting display device by assuming it will be placed under harsh conditions after shipment. When each product undergoes 48 hours of HAST, the corresponding light-emitting display device can be determined to have appropriate reliability.

[0086] The results in Table 1 above show that as the width of the second aperture BCT decreases, and when the thickness of the electron-injected layer EIL exceeds [a certain value], [the following occurs]. Or in some cases The light-emitting display device maintains reliability even under high temperature and high humidity conditions. Based on the above results, it can be confirmed that when the width of the second aperture BCT is greater than or equal to 102 μm, the light-emitting display device struggles to maintain normal operation under accelerated conditions of high temperature and high humidity.

[0087] The following will describe the results of HAST performed in Test Examples 1 to 7, as shown in Table 2 below, by fixing the width of the second hole BCT to 100 μm and varying the thickness of the electron injection layer EIL.

[0088] [Table 2]

[0089]

[0090] As listed in Table 2 above, it can be confirmed that the thickness of the electron-injected layer (EIL) is greater than or equal to... In Test Examples 3 to 7, no malfunctions of the light-emitting display device occurred when HAST was executed for 48 hours and 96 hours. For reference, Table 2 shows that HAST was executed 30 times under each condition to determine whether a malfunction occurred, and the number of HAST attempts that resulted in a malfunction was recorded.

[0091] The thickness of the electron-injected layer (EIL) is less than In test examples 1 and 2, the causes of the failures are as follows.

[0092] That is to say, when the thickness of the electron-injected layer (EIL) is less than When it is difficult to properly stack the electron injection layer EIL on the inner surface of the BCT, external moisture or moisture generated during the cooling process can damage the organic layer OS at the edge of the active region AA through the side of the second hole BCT via the embankment 120 adjacent to the second hole BCT, thus degrading the organic layer OS, which is observed as shrinkage of the light-emitting part.

[0093] Based on the above results, the thickness of the electron injection layer EIL in the light-emitting display device 1000 according to the present invention can be greater than or equal to... But it can be less than or equal to That is, the light-emitting display device 1000 according to the present invention is configured such that the electron injection layer EIL exposed by the embankment 120 in the second hole BCT has a value greater than or equal to The thickness ensures reliability under high temperature and high humidity conditions, and the electron injection layer (EIL) has a thickness less than or equal to [a certain value]. The thickness of the layer is such that it prevents a significant increase in resistance regarding the conductive connection between the cathode 200 on the electron injection layer EIL and the first power supply voltage line 106c.

[0094] A capping layer can be further provided on the cathode 200, the capping layer being configured to protect the light-emitting device OLED and improve light extraction efficiency.

[0095] Furthermore, an encapsulation structure 300 configured to protect the light-emitting OLED disposed therein can be further provided on the cathode 200.

[0096] For example, the encapsulation structure 300 can be configured by alternately stacking inorganic encapsulation layers 310 and 330 with organic encapsulation layer 320. In order to effectively prevent lateral moisture penetration, inorganic encapsulation layers 310 and 330 can be formed closer to the edge of substrate 100 than organic encapsulation layer 320, or inorganic encapsulation layers 310 and 330 can be formed all the way to the edge of substrate 100.

[0097] The light-emitting display device 1000 according to the present invention enables the electron injection layer EIL to enter the second hole BCT of the dam 120 corresponding to the first power supply voltage line 106c, thereby protecting the exposed surface of the dam 120 from external moisture.

[0098] Furthermore, according to the present invention, the width of the second hole BCT of the dam 120 provided outside the active region AA of the substrate 100 is set to be less than or equal to a specified value so that the first power supply voltage line 106c formed together with the formation of the thin film transistor array is connected to the cathode 200 of the light-emitting device OLED, thereby preventing moisture from penetrating into the dam 120 through the second hole BCT, thereby preventing pixel shrinkage phenomenon caused by the shrinkage of the light-emitting portion of the sub-pixel provided close to the edge of the substrate 100.

[0099] Furthermore, according to the present invention, the electron injection layer EIL, formed together with the cathode 200 in the common layer of the light-emitting device, can be formed of metal or metal compound and extend into the non-active region NA, overlapping with the second hole BCT of the dam 120. Thus, the electron injection layer EIL is connected to the first power supply voltage line 106c inside the second hole BCT of the dam 120. Therefore, the electron injection layer EIL, formed of a metallic component, covers the interior of the second hole BCT of the dam 120 and acts as a moisture barrier, thereby preventing lateral exposure of organic components in the non-active region and improving the reliability of the light-emitting display device 1000.

[0100] Furthermore, according to the present invention, the second hole BCT of the embankment 120 disposed in the non-active region NA can have different widths in the curved and straight regions of the non-active region NA. However, even in the curved region, the width of the second hole BCT is set to be less than or equal to 100 μm, thereby shortening the length of the moisture transmission path. In addition, the electrode and metal components cover the inner surface of the second hole BCT and the inner surface of the organic film formed below, thereby increasing the heat resistance and moisture resistance of the light-emitting display device 1000 and thus improving the reliability of the light-emitting display device 1000.

[0101] In the light-emitting display device 1000 according to the present invention, the light-emitting device OLED is not limited to the single stacked structure described above, but can be applied to a structure including multiple stacked layers.

[0102] Figure 4A and Figure 4B This diagram illustrates a light-emitting display device according to another embodiment of the present invention. Figure 2 The cross-sectional views of regions A and B are shown.

[0103] like Figure 4A As shown, in a light-emitting display device according to another embodiment of the present invention, the light-emitting device OLED disposed in each sub-pixel may include at least two stacked layers S1 and S2 and a charge generation layer CGL disposed between the stacked layers S1 and S2.

[0104] In each stack S1 and S2, the first stack S1 closest to the anode 110 may include a hole injection layer HIL, a first common layer CML1, a first light-emitting layer EML1, and a second common layer CML2.

[0105] The second stack S2 near the cathode 200 may include a third common layer CML3, a second light-emitting layer EML2, a fourth common layer CML4, and an electron injection layer EIL.

[0106] The first common layer CML1 and the third common layer CML3 may be layers related to hole transport and include at least one of hole transport layers, electron blocking layers, etc., and the second common layer CML2 and the fourth common layer CML4 may be layers related to electron transport and include at least one of hole blocking layers, electron transport layers, etc.

[0107] In some cases, besides Figure 4A In addition to the stacks S1 and S2 shown, other stacks may be further provided. For example, the stacks may include a hole transport layer, a light-emitting layer, and an electron transport layer. When two or more stacks are provided, a charge generation layer may be further provided between the stacks to provide holes and electrons to the stacks away from the electrodes.

[0108] In addition, such as Figure 4B As shown, in a light-emitting display device according to another embodiment of the present invention, elements S1, S2, and CGL formed of organic materials are not disposed in the second aperture BCT. Inside the second aperture BCT, the electron injection layer EIL formed of inorganic materials or inorganic compounds and the cathode 200 are directly stacked on the first connection pattern 110a formed of the anode component. Therefore, hole transport layer and electron transport layer with relatively large resistance are not disposed inside the second aperture BCT, and thus, without large resistance, electrical signals can be smoothly transmitted from the first power supply voltage line 106c to the cathode 200.

[0109] The OLED, which is set in the active region AA, can be configured to form white light-emitting devices in all sub-pixels and form color filters on the emission side of each sub-pixel, thereby changing the color of the emitted light according to each sub-pixel. Alternatively, light-emitting layers that emit light of different colors can be set in each sub-pixel, thereby presenting different colors according to the sub-pixel.

[0110] The operation of each sub-pixel and the importance of the ground signal or low power supply voltage signal applied to the cathode 200 will be described below with reference to the circuit diagram of each sub-pixel.

[0111] Figure 5 This is a circuit diagram of each sub-pixel of a light-emitting display device according to an embodiment of the present invention.

[0112] Each sub-pixel of the light-emitting display device according to the present invention may, for example, include a light-emitting device OLED, a driving thin-film transistor DR-T, a switching thin-film transistor SW-T, a sensing thin-film transistor SS-T, and a storage capacitor Cst, such as Figure 5 As shown in the image.

[0113] In the light-emitting display device according to the present invention, the driving thin-film transistor DR-T, the switching thin-film transistor SW-T, the sensing thin-film transistor SS-T, and the storage capacitor Cst are structurally located below the light-emitting device OLED.

[0114] OLEDs emit light using current supplied by a driving thin-film transistor (DR-T). The anode of the OLED can be connected to the driving DR-T. Figure 2 The first electrode of the TFT (which can be the source electrode driving the thin-film transistor DR-T) Figure 2 (106a) and the cathode of the OLED light-emitting device can be connected to a first power supply voltage line VSSL that is supplied with a first power supply voltage. The first power supply voltage line VSSL can be a low voltage line supplied with a low power supply voltage or a ground voltage line.

[0115] OLED light-emitting devices include an anode ( Figure 2 110 in the middle), light-emitting layer ( Figure 2 OS and cathode (in Figure 2 (200 in the text). In OLED light-emitting devices, when voltage is applied to the anode and cathode, holes and electrons move to the light-emitting layer, where they recombine to emit light.

[0116] A driving thin-film transistor (DR-T) is positioned between a second power supply voltage line VDDL, which is supplied with a second power supply voltage, and the light-emitting device (OLED). The driving DR-T regulates the current flowing from the second power supply voltage line VDDL to the OLED through the voltage difference between its gate electrode and source electrode (which may be a first electrode). The gate electrode of the driving DR-T may be connected to the source electrode of a switching thin-film transistor (SW-T), which is referred to as the third electrode below. The drain electrode of the driving DR-T (the drain electrode of the driving DR-T is referred to as the second electrode below) may be connected to the second power supply voltage line VDDL, and the first electrode (the source electrode of the driving DR-T) may be connected to the anode of the OLED. The second power supply voltage line VDDL may be a high-voltage line supplied with a high power supply voltage.

[0117] The switching thin-film transistor SW-T is turned on by a gate signal from the scan line and provides the voltage of the data line DL to the gate electrode of the driving thin-film transistor DR-T. The gate electrode of the switching thin-film transistor SW-T can be connected to the switching line SL, the third electrode (the source electrode of the switching thin-film transistor SW-T) can be connected to the gate electrode of the driving thin-film transistor DR-T, and the drain electrode (which is the fourth electrode) of the switching thin-film transistor SW-T can be connected to the data line DL.

[0118] The sensing thin-film transistor SS-T can be turned on using an initiation signal from the sensing line SSL, and the reference voltage line RL is connected to the first electrode (the source electrode of the driving thin-film transistor DR-T). The gate electrode of the sensing thin-film transistor SS-T can be connected to the sensing line SSL, the drain electrode of the sensing thin-film transistor SS-T (which serves as the sixth electrode) can be connected to the reference voltage line RL, and the source electrode of the sensing thin-film transistor SS-T (which serves as the fifth electrode) can be connected to the first electrode (the source electrode of the driving thin-film transistor DR-T).

[0119] A storage capacitor Cst is formed between the gate electrode of the driving thin-film transistor DR-T and the first electrode (the source electrode of the driving thin-film transistor DR-T). The storage capacitor Cst stores the difference between the gate voltage and the source voltage of the driving thin-film transistor DR-T.

[0120] One electrode of the storage capacitor Cst can be connected to the gate electrode of the driving thin-film transistor DR-T and the source electrode of the switching thin-film transistor SW-T, and the other electrode of the storage capacitor Cst can be connected to the first electrode (the source electrode of the driving thin-film transistor DR-T), the fifth electrode (the source electrode of the sensing thin-film transistor SS-T), and the anode of the light-emitting device OLED.

[0121] The driving thin-film transistor (DR-T), switching thin-film transistor (SW-T), and sensing thin-film transistor (SS-T) of each sub-pixel can be formed as thin-film transistors on a substrate. Although Figure 5The exemplary diagram illustrates that the driving thin-film transistor DR-T, switching thin-film transistor SW-T, and sensing thin-film transistor SS-T of each sub-pixel are N-type semiconductor transistors with N-type semiconductor characteristics, but the embodiments of the present invention are not limited thereto. That is, the driving thin-film transistor DR-T, switching thin-film transistor SW-T, and sensing thin-film transistor SS-T of each sub-pixel can be formed as P-type semiconductor transistors with P-type semiconductor characteristics. When the driving thin-film transistor DR-T, switching thin-film transistor SW-T, and sensing thin-film transistor SS-T of each sub-pixel are formed as P-type semiconductor transistors, the orientation of the source electrode and drain electrode of each thin-film transistor can be opposite to those of the N-type semiconductor transistors. For example, contrary to the above, the drain electrode of the driving transistor DR-T can be connected to the light-emitting device OLED. In the light-emitting display device according to the present invention, the thin-film transistors are not limited to N-type or P-type semiconductor transistors.

[0122] In the light-emitting display device according to the present invention, each sub-pixel may include Figure 5 The circuit described above, as shown, may, in some cases, employ a 2T1C structure in which the sensing thin-film transistor is omitted, or may further include additional transistors configured to perform compensation functions. The light-emitting display device according to the invention effectively prevents pixel shrinkage by changing the structure of the device outside the active region, without limitation on the internal structure of the sub-pixels.

[0123] Figure 6 yes Figure 1 The cross-sectional view shown is of a straight region with width c.

[0124] like Figure 6 As shown, in the light-emitting display device according to the present invention, the second hole BCT of the embankment 120 formed on both sides of the non-active region outside the active region AA, which does not correspond to the pad portion, can be formed to... Figure 1 The straight region shown has a smaller width c.

[0125] Hereinafter, variations of the light-emitting display device according to the present invention will be described.

[0126] Figure 7 and Figure 8 This is a cross-sectional view illustrating a variant of the light-emitting display device according to the present invention.

[0127] exist Figure 7 In the variant of the light-emitting display device according to the present invention shown, the second aperture BCT can be formed symmetrically with respect to the connecting pattern 110a. In this case, an electron injection layer EIL can also be provided below the cathode 200 to prevent moisture from penetrating into the sidewalls of the second aperture BCT.

[0128] exist Figure 8 In the variant of the light-emitting display device according to the present invention shown, similar to the straight area of ​​the substrate 100, the width of the second hole BCT of the embankment 120 corresponding to the first power supply voltage line 106c at the corner of the substrate 100 is reduced. In this case, except for Figure 1 All widths of the second holes (BCTs) of the embankment 120 at each side of the substrate 100 outside the pad portion shown can be set to less than or equal to 100 μm, and the second holes (BCTs) of the embankment 120 can be configured to have the same or similar widths, regardless of the area of ​​the substrate 100. Here, the electron injection layer (EIL) is located below the cathode 200 inside the second hole (BCT), thus covering the exposed sides and top of the embankment 120, thereby preventing moisture from penetrating into the embankment 120 formed of organic material.

[0129] exist Figure 8 In the light-emitting display device shown according to another embodiment of the present invention, the second hole BCT of the dam 120 is formed to be open at a location further away from the active region AA than the trench holes TRT1 and TRT2. In this case, the electron injection layer EIL can be located on the upper surface of the connecting pattern 110a, such that all widths of the second hole BCT of the dam 120 at each side of the substrate 100 are set to be less than or equal to 100 μm, and the second hole BCT of the dam 120 have the same or similar widths, regardless of the area of ​​the substrate 100, thereby preventing moisture from penetrating through the dam 120 and thus blocking moisture transmission to the active region AA.

[0130] Figure 9 This is a cross-sectional view illustrating an example of a region, in which... Figure 1 The second hole shown in the diagram traverses the portion of the embankment with a third width c.

[0131] like Figure 9 As shown, in some regions of the second aperture (dike aperture) BCT, for example, in regions of the second aperture (dike aperture) BCT with a smaller width, the first power supply voltage line 106c and the second connecting metal pattern 109c connected thereto may not be directly connected to the electron injection layer EIL or the cathode 200. In this case, the second connecting metal pattern 109c may be electrically connected to the connecting pattern 110a through a second trench hole formed through the second planarization film 108 in regions that do not overlap with the second aperture BCT. That is, the second aperture BCT and the second trench hole may not overlap with each other.

[0132] In having Figure 9 In the light-emitting display device with the structure of the electron injection layer (EIL), the electron injection layer (EIL) is also disposed below the cathode 200, thereby protecting the side and top of the dike 120 through the second hole (BCT) and its surrounding area, and preventing external moisture from penetrating into the dike 120.

[0133] exist Figure 8 and Figure 9 In the light-emitting display device, for example, the structure disposed on the cathode 200 is omitted. A structure formed by alternately stacking inorganic encapsulation layers 310 and 330 with an organic encapsulation layer 320 may be further disposed on the cathode 200. Figure 2 The packaging structure 300 shown, or the packaging substrate, can be bonded to the substrate 100 or the thin-film transistor array substrate 500 by application surface sealing or edge sealing.

[0134] For this purpose, the light-emitting display device according to the present invention may include: a substrate configured to have an active region and an active region; a plurality of light-emitting devices disposed in sub-pixels within the active region; a voltage line disposed along the edge of the active region of the substrate within the active region; and a dam configured to expose the light-emitting portion of the light-emitting devices through a plurality of first holes formed in the active region and the voltage line through a second hole formed in the active region, wherein an electron injection layer of the light-emitting devices may be disposed over the entire active region and extend into the active region and disposed within the second hole.

[0135] Each of the light-emitting devices may include an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, the electron injection layer, and a cathode configured to be stacked sequentially.

[0136] In the non-active region, the cathode may be disposed on the electron injection layer, and inside the second hole, the voltage line may be connected to the cathode, with the electron injection layer inserted between the voltage line and the cathode.

[0137] The second hole can be integrally disposed in the non-active area other than the pad portion.

[0138] The edges of at least four corners of the substrate may be curved, and the edges between the corners may be straight. The second hole may have a first width in a region configured parallel to the curved region of the substrate and a second width in a region configured parallel to the straight region of the substrate. The edge of the embankment may be further inward than the edge of the substrate.

[0139] The first width may be less than or equal to 100 μm.

[0140] The electron injection layer can be connected to the voltage line through the second hole, and can contact the embankment at the side of the second hole and the upper part of the embankment in the non-active region.

[0141] The end line of the electron injection layer may be positioned further outward compared to the second hole in the non-active region.

[0142] The electron injection layer may include a metal or a metal compound, and may have to The thickness.

[0143] The electron-injected layer may include at least one of LiF, Yb, Ag, and Mg.

[0144] The light-emitting display device may further include a connection pattern formed in the same layer as the anode and overlapping with the second hole, the connection pattern being connectable to a voltage line disposed below it and to an electron injection layer disposed above it.

[0145] The light-emitting display device may further include a first planarization film and a second planarization film disposed between the voltage line and the embankment, each of the first planarization film and the second planarization film may include a groove hole, the groove hole being configured to overlap with the second hole and having a width smaller than the width of the second hole.

[0146] The first planarization film may include a first trench hole, the second planarization film may include a second trench hole, and the first trench hole and the second trench hole may have different widths, wherein the second hole may be formed to be open at a location further away from the active region than at least one of the first trench hole and the second trench hole.

[0147] The light-emitting display device may further include a connecting metal pattern continuously disposed in the first trench hole and on the first planarization film, the connecting metal pattern being electrically connected to a voltage line disposed below it and forming a stacked structure with the voltage line inside the first trench hole.

[0148] The terminal line of the electron injection layer and the terminal line of the cathode may be the same.

[0149] The second hole can be separated from the first hole.

[0150] It is evident from the above description that the light-emitting display device according to the present invention has the following effects.

[0151] First, in the light-emitting display device according to the present invention, the width of the second hole formed in the dam portion provided outside the active region of the substrate is set to be less than or equal to a specified value so that the first power supply voltage line formed together with the formation of the thin film transistor array is connected to the cathode of the light-emitting device, thereby preventing moisture from penetrating into the dam portion through the second hole, thereby preventing pixel shrinkage phenomenon where the light-emitting portion of the sub-pixel provided close to the edge of the substrate shrinks.

[0152] Secondly, in the light-emitting display device according to the present invention, the electron injection layer EIL, which is formed together with the cathode in the common layer of the light-emitting device, is formed of metal or metal compound and extends to the non-active region of the substrate, overlapping with the second hole of the dam. Thus, the electron injection layer is connected to the first power supply voltage line inside the second hole of the dam. Therefore, the electron injection layer formed of metal covers the interior of the second hole of the dam and acts as a moisture barrier, thereby preventing lateral exposure of organic components in the non-active region and improving the reliability of the light-emitting display device.

[0153] Third, the light-emitting display device according to the present invention allows the second hole provided in the embankment in the non-active region NA to have different widths in the curved and straight regions of the non-active region. However, even in the curved region, the width of the second hole is set to be less than or equal to 100 μm, thereby shortening the length of the moisture transmission path and allowing the electrode and metal components to cover the inner surface of the second hole and the inner surface of the organic film formed below, thereby increasing the heat resistance and moisture resistance of the light-emitting display device and thus improving the reliability of the light-emitting display device.

[0154] It will be apparent to those skilled in the art that various modifications and variations can be made to this invention without departing from its spirit or scope. Therefore, this invention is intended to cover any modifications and variations that fall within the scope of the appended claims and their equivalents.

Claims

1. A light-emitting display device, comprising: A substrate having an active region and an active region surrounding the active region, wherein the active region is located between the active region and an edge of the substrate; Multiple light-emitting devices disposed in sub-pixels within the active region; A voltage line is disposed in the non-active region along the edge of the active region of the substrate; A dam section, wherein the dam section exposes the light-emitting portion of the light-emitting device through a plurality of first holes in the active region and exposes the voltage line through a second hole in the non-active region; and A first planarization film and a second planarization film are disposed between the voltage line and the embankment. The electron injection layer of the light-emitting device is disposed over the entire active region. The electron injection layer extends into the non-active region and is disposed inside the second aperture, and covers the side of the embankment adjacent to the edge of the substrate. The side portion of the embankment is located outside the end lines of the first planarization membrane and the second planarization membrane.

2. The light-emitting display device according to claim 1, wherein each of the light-emitting devices comprises an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, the electron injection layer, and a cathode arranged in sequence.

3. The light-emitting display device according to claim 2, wherein: In the non-active region, the cathode is disposed on the electron injection layer; and Inside the second hole, the voltage line is connected to the cathode, and the electron injection layer is inserted between the voltage line and the cathode.

4. The light-emitting display device according to claim 1, wherein the second hole is integrally disposed in the non-active area other than the pad portion.

5. The light-emitting display device according to claim 4, wherein: The substrate has curved edges at at least four corners, and straight edges between adjacent corners. The second hole has a first width in a region parallel to the curved region of the substrate and a second width in a region parallel to the straight region of the substrate. The edge of the embankment is further inward than the edge of the substrate.

6. The light-emitting display device according to claim 5, wherein the first width is less than or equal to 100 μm.

7. The light-emitting display device according to claim 1, wherein the electron injection layer is connected to the voltage line through the second hole and contacts the embankment at the side of the second hole and the upper part of the embankment in the non-active region.

8. The light-emitting display device according to claim 1, wherein the end line of the electron injection layer is further outward compared to the second hole in the non-active region.

9. The light-emitting display device according to claim 1, wherein: The electron-injected layer comprises a metal or a metal compound; and The electron injection layer has a thickness of 9 Å to 20 Å.

10. The light-emitting display device according to claim 9, wherein the electron injection layer comprises at least one of LiF, Yb, Ag and Mg.

11. The light-emitting display device according to claim 2, further comprising a connection pattern formed in the same layer as the anode and overlapping with the second hole. The connection pattern is connected to the voltage line disposed below it and to the electron injection layer disposed above it.

12. The light-emitting display device of claim 11, wherein each of the first planarization film and the second planarization film includes a trench hole, the trench hole overlapping the second hole and having a width smaller than the width of the second hole.

13. The light-emitting display device according to claim 12, wherein the first planarization film includes a first trench hole, the second planarization film includes a second trench hole, and the first trench hole and the second trench hole have different widths. The second hole is configured to be opened at a location further away from the active region than at least one of the first trench hole and the second trench hole.

14. The light-emitting display device according to claim 13, further comprising a connecting metal pattern continuously disposed in the first trench hole and on the first planarization film. The connecting metal pattern is electrically connected to the voltage line disposed below it, and inside the first trench hole, the connecting metal pattern forms a stacked structure with the voltage line located below the connecting metal pattern and the connecting pattern on the connecting metal pattern.

15. The light-emitting display device according to claim 2, wherein the end line of the electron injection layer is the same as the end line of the cathode.

16. The light-emitting display device according to claim 1, wherein the second hole is separated from the first hole.

17. The light-emitting display device according to claim 1, wherein the electron injection layer of the light-emitting device overlaps with the second hole and covers the interior of the second hole.

18. The light-emitting display device according to claim 1, wherein the light-emitting device includes a cathode disposed on the electron injection layer, wherein the electron injection layer is formed to have a thickness smaller than that of the cathode and to have the same width as the cathode, such that the electron injection layer located below the cathode directly contacts the embankment located on the side of the second hole.

19. The light-emitting display device according to claim 11, wherein the second hole is formed symmetrically with respect to the connection pattern.

20. The light-emitting display device of claim 1, further comprising a connecting metal pattern and a connecting pattern connected to the voltage line, wherein the first planarization film includes a first trench hole, and the second planarization film includes a second trench hole formed at a position overlapping with the first trench hole to expose the connecting metal pattern, wherein the connecting metal pattern is electrically connected to the connecting pattern through the second trench hole in an area not overlapping with the second hole.

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