Light-emitting element

Abstract

A light-emitting element includes a semiconductor structure, an insulating layer, a first electrode, a second electrode, and a third electrode. The semiconductor structure includes a first-type semiconductor layer, a second-type semiconductor layer, and an active layer disposed between the first-type semiconductor layer and the second-type semiconductor layer. The insulating layer is disposed on the semiconductor structure. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer. The first electrode, the second electrode, and the third electrode are separated structurally. The third electrode has at least a first portion. The first portion of the third electrode is disposed on a sidewall of the semiconductor structure, and the insulating layer is located between the third electrode and the semiconductor structure.

Description

Technical Field

[0001] The present invention relates to a light-emitting element. Background Art

[0002] A light-emitting diode display device includes a driving backplane and a plurality of light-emitting diode chips disposed on the driving backplane. Inheriting the characteristics of light-emitting diodes, the light-emitting diode display device has advantages such as power saving, high efficiency, high brightness, and fast response time. Compared with an organic light-emitting diode display device, the light-emitting diode display device also has advantages such as easy color calibration, long light-emitting life, and no image burn-in. Therefore, the light-emitting diode display device is regarded as the next-generation display technology. However, the light-emitting diode chip is etched from an epitaxial stack; during the etching process, the light-emitting diode chip is damaged and defects are generated. These defects will cause sidewall leakage current and a high proportion of non-radiative recombination in the light-emitting diode chip, affecting the light-emitting efficiency of the light-emitting diode chip. Summary of the Invention

[0003] An object of the present invention is to provide a light-emitting element with high light-emitting efficiency.

[0004] The light-emitting element of the present invention includes a semiconductor structure, an insulating layer, a first electrode, a second electrode, and a third electrode. The semiconductor structure includes a first-type semiconductor layer, a second-type semiconductor layer, and an active layer disposed between the first-type semiconductor layer and the second-type semiconductor layer. The insulating layer is disposed on the semiconductor structure. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer. The first electrode, the second electrode, and the third electrode are separated structurally. The third electrode has at least a first portion. The first portion of the third electrode is disposed on the sidewall of the semiconductor structure, and the insulating layer is located between the third electrode and the semiconductor structure.

[0005] In an embodiment of the present invention, the sidewall of the above-mentioned semiconductor structure includes the sidewall of the active layer, and the first portion of the third electrode is disposed on the sidewall of the active layer.

[0006] In an embodiment of the present invention, the sidewall of the above-mentioned semiconductor structure further includes the sidewall of the first-type semiconductor layer, and the first portion of the third electrode is further disposed on the sidewall of the first-type semiconductor layer.

[0007] In an embodiment of the present invention, the sidewall of the above-mentioned semiconductor structure further includes the sidewall of the second-type semiconductor layer, and the first portion of the third electrode is further disposed on the sidewall of the second-type semiconductor layer.

[0008] In an embodiment of the present invention, the above-mentioned light-emitting element further includes a first conductive pattern, a second conductive pattern, and a third conductive pattern. The first conductive pattern is disposed on the first electrode and electrically connected to the first electrode. The second conductive pattern is disposed on the second electrode and electrically connected to the second electrode. The third conductive pattern is disposed on the third electrode and electrically connected to the first portion of the third electrode. The first conductive pattern, the second conductive pattern, and the third conductive pattern are structurally separated.

[0009] In an embodiment of the present invention, the above-mentioned semiconductor structure has opposite first and second surfaces. The sidewalls of the semiconductor structure are disposed between the first surface and the second surface. The third electrode further has a second portion disposed on the first surface of the semiconductor structure and electrically connected to the first portion of the third electrode. The third conductive pattern is disposed on the second portion of the third electrode.

[0010] In an embodiment of the present invention, the above-mentioned light-emitting element further includes at least one first optical microstructure overlapping the active layer.

[0011] In an embodiment of the present invention, the above-mentioned active layer emits a light beam, and at least one first optical microstructure converges the light beam.

[0012] In an embodiment of the present invention, the above-mentioned active layer has a first region and a second region, wherein the second region of the active layer is located between the first region of the active layer and the sidewalls of the semiconductor structure. The light-emitting element further includes at least one second optical microstructure, wherein at least one first optical microstructure and at least one second optical microstructure respectively overlap the first region and the second region of the active layer.

[0013] In an embodiment of the present invention, the above-mentioned active layer emits a light beam, at least one first optical microstructure converges the light beam, and at least one second optical microstructure diverges the light beam.

[0014] In an embodiment of the present invention, the above-mentioned light-emitting element further includes at least one second optical microstructure overlapping the active layer, wherein the active layer emits a light beam, and at least one second optical microstructure diverges the light beam.

[0015] In an embodiment of the present invention, the above-mentioned third electrode has a negative bias voltage. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a cross-sectional schematic diagram of a light-emitting element according to an embodiment of the present invention.

[0017] Figure 2 is Figure 1 a bottom view schematic diagram of the light-emitting element.

[0018] Figure 3The energy band inside a light-emitting element according to an embodiment of the present invention when the third electrode has no bias voltage is shown.

[0019] Figure 4 The energy band inside a light-emitting element according to an embodiment of the present invention when the third electrode has a negative bias voltage is shown.

[0020] Figure 5 A cross-sectional schematic diagram of a light-emitting element according to an embodiment of the present invention.

[0021] Figure 6 A cross-sectional schematic diagram of a light-emitting element according to an embodiment of the present invention.

[0022] Figure 7 A cross-sectional schematic diagram of a light-emitting element according to an embodiment of the present invention.

[0023] Figure 8 A cross-sectional schematic diagram of a light-emitting element according to an embodiment of the present invention.

[0024] Figure 9 A cross-sectional schematic diagram of a light-emitting element according to an embodiment of the present invention.

[0025] Figure 10 A cross-sectional schematic diagram of a light-emitting element according to an embodiment of the present invention.

[0026] Figure 11 A cross-sectional schematic diagram of a light-emitting element according to an embodiment of the present invention.

[0027] Figure 12 A cross-sectional schematic diagram of a light-emitting element according to an embodiment of the present invention.

[0028] Figure 13 A cross-sectional schematic diagram of a light-emitting element according to an embodiment of the present invention.

[0029] Figure 14 A cross-sectional schematic diagram of a light-emitting element according to an embodiment of the present invention.

[0030] The reference numerals are as follows:

[0031] 10, 10A, 10B, 10C, 10D, 10E, 10F, 10G, 10H, 10I: Light-emitting element

[0032] 110: First-type semiconductor layer

[0033] 110a, 120a, 130a, Sc: Sidewall

[0034] 110a-1: First sub-sidewall

[0035] 110a-2: Second sub-sidewall

[0036] 120: Second-type semiconductor layer

[0037] 130: Active layer

[0038] 140, 180: Insulating layer

[0039] 140a: First opening

[0040] 140b: Second opening

[0041] 151: First electrode

[0042] 152: Second electrode

[0043] 160: Third electrode

[0044] 161: First part

[0045] 162: Second part

[0046] 171: First conductive pattern

[0047] 172: Second conductive pattern

[0048] 173: Third conductive pattern

[0049] 180: Optical microstructure

[0050] 181: First optical microstructure

[0051] 182: Second optical microstructure

[0052] 190: Insulating layer

[0053] 190a: Opening

[0054] e-: Electron

[0055] i: Leakage current

[0056] L: Light beam

[0057] R1: First region

[0058] R2: Second region

[0059] S: Semiconductor structure

[0060] Sa: First surface

[0061] Sb: Second surface

[0062] Sc: Sidewall

[0063] z: Direction

[0064] θ: Angle Detailed implementation manners

[0065] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals will be used throughout the drawings and the description to refer to the same or like parts.

[0066] It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, no intervening elements are present. As used herein, "connected" can refer to physical and / or electrical connection. Further, "electrically connected" or "coupled" can mean that other elements exist between two elements.

[0067] As used herein, "about", "approximately", or "substantially" includes the stated value and the average within an acceptable deviation range of a particular value determined by a person of ordinary skill in the art, taking into account the particular amounts of the measurements and the errors associated with the measurements (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, or ±5%. Further, "about", "approximately", or "substantially" as used herein can be selected according to optical properties, etching properties, or other properties to choose a more acceptable deviation range or standard deviation, rather than applying one standard deviation to all properties.

[0068] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by a person of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and this invention, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0069] Figure 1 It is a cross-sectional schematic view of a light-emitting element 10 according to an embodiment of the present invention. Figure 2 is Figure 1 a bottom view schematic of the light-emitting element 10.

[0070] Please refer to Figure 1 and Figure 2 , the light-emitting element 10 includes a semiconductor structure S. The semiconductor structure S includes a first-type semiconductor layer 110, a second-type semiconductor layer 120, and an active layer 130, wherein the active layer 130 is disposed between the first-type semiconductor layer 110 and the second-type semiconductor layer 120. The semiconductor structure S has a first surface Sa, a second surface Sb, and sidewalls Sc, wherein the first surface Sa and the second surface Sb are disposed opposite to each other, and the sidewalls Sc are disposed between the first surface Sa and the second surface Sb.

[0071] In this embodiment, the epitaxial stack (not shown) includes a first-type semiconductor material layer (not shown), an active material layer (not shown), and a second-type semiconductor material layer (not shown) for forming the first-type semiconductor layer 110, the active layer 130, and the second-type semiconductor layer 120, respectively. The semiconductor structure S is etched out from the epitaxial stack, and the sidewall Sc of the semiconductor structure S may refer to the etched surface of the semiconductor structure S. In this embodiment, the sidewall Sc (i.e., the etched surface) of the semiconductor structure S includes the sidewall 110a of the first-type semiconductor layer 110, the sidewall 130a of the active layer 130, and the sidewall 120a of the second-type semiconductor layer 120.

[0072] For example, in this embodiment, the sidewall 110a of the first-type semiconductor layer 110 may include a first sub-sidewall 110a-1 and a second sub-sidewall 110a-2. The first sub-sidewall 110a-1 is connected to the second sub-sidewall 110a-2, and an angle θ is formed between the first sub-sidewall 110a-1 and the second sub-sidewall 110a-2. The sidewall 130a of the active layer 130 is connected to the second sub-sidewall 110a-2 of the first-type semiconductor layer 110, and the sidewall 120a of the second-type semiconductor layer 120 is connected to the sidewall 130a of the active layer 130. In other words, in this embodiment, the sidewall Sc of the semiconductor structure S formed by connecting the sidewall 110a of the first-type semiconductor layer 110, the sidewall 130a of the active layer 130, and the sidewall 120a of the second-type semiconductor layer 120 may not be in the same plane, and the sidewall Sc of the semiconductor structure S may selectively have a step difference, but the present invention is not limited thereto.

[0073] The light-emitting element 10 further includes an insulating layer 140 disposed on the semiconductor structure S. Specifically, in this embodiment, the insulating layer 140 at least covers the sidewall Sc and the first surface Sa of the semiconductor structure S, and has a first opening 140a and a second opening 140b that respectively overlap the first-type semiconductor layer 110 and the second-type semiconductor layer 120. For example, in this embodiment, the material of the insulating layer 140 may be an inorganic material (e.g., silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), an organic material, or a combination of the above.

[0074] The light-emitting element 10 further includes a first electrode 151 and a second electrode 152 that are electrically connected to the first-type semiconductor layer 110 and the second-type semiconductor layer 120, respectively. Specifically, in the present embodiment, the first electrode 151 and the second electrode 152 are respectively filled into a first opening 140a and a second opening 140b of the insulating layer 140 to be electrically connected to the first-type semiconductor layer 110 and the second-type semiconductor layer 120, respectively. For example, in the present embodiment, the first-type semiconductor layer 110, the second-type semiconductor layer 120, and the active layer 130 may be an n-type semiconductor layer, a p-type semiconductor layer, and a multiple quantum well layer, respectively, and the first electrode 151 and the second electrode 152 may be the cathode and the anode of the light-emitting element 10, respectively, but the present invention is not limited thereto.

[0075] The light-emitting element 10 further includes a third electrode 160. The third electrode 160 is disposed on the insulating layer 140. The insulating layer 140 is located between the third electrode 160 and the semiconductor structure S. The first electrode 151, the second electrode 152, and the third electrode 160 are separated from each other structurally. The third electrode 160 has at least a first portion 161 that is disposed on a sidewall Sc of the semiconductor structure S.

[0076] In the present embodiment, the first portion 161 of the third electrode 160 is disposed at least on the sidewall Sc of the semiconductor structure S near the first surface Sa. In the present embodiment, the first portion 161 of the third electrode 160 is disposed at least on a sidewall 130a of the active layer 130. For example, in the present embodiment, in addition to being disposed on the sidewall 130a of the active layer 130, the first portion 161 of the third electrode 160 may be selectively disposed on a sidewall 110a of the first-type semiconductor layer 110 and a sidewall 120a of the second-type semiconductor layer 120, but the present invention is not limited thereto. In addition, in the present embodiment, the third electrode 160 may selectively have a second portion 162 that is disposed on the first surface Sa of the semiconductor structure S and is electrically connected to the first portion 161 of the third electrode 160, but the present invention is not limited thereto.

[0077] Figure 3 Shows the energy bands inside the light-emitting element 10 of an embodiment of the present invention when the third electrode 160 has no bias voltage. Figure 4 Shows the energy bands inside the light-emitting element 10 of an embodiment of the present invention when the third electrode 160 has a negative bias voltage.

[0078] Please refer to Figure 1 and Figure 3 , when the third electrode 160 has no bias voltage, the sidewall Sc (i.e., the etched surface) of the semiconductor structure S has defects due to the etching process, such that the energy bands of the light-emitting element 10 are deformed near the interface between the sidewall Sc of the semiconductor structure S and the insulating layer 140, and electrons e -It is easily trapped near the sidewall Sc, and then undergoes non-radiative recombination with holes near the sidewall Sc, resulting in leakage current i and causing a loss in the luminous efficiency of the light-emitting element 10.

[0079] Please refer to Figure 1 and Figure 4 . It is worth mentioning that when the third electrode 160 has a negative bias voltage, the deformation of the energy band of the light-emitting element 10 near the interface between the sidewall Sc and the insulating layer 140 can be flattened, so that the electron e - is not easily trapped near the sidewall Sc, and then undergoes radiative recombination with holes inside the active layer 130. Thus, the luminous efficiency of the light-emitting element 10 can be improved.

[0080] Please refer to Figure 1 and Figure 2 . In this embodiment, the light-emitting element 10 further includes a first conductive pattern 171, a second conductive pattern 172, and a third conductive pattern 173. The first conductive pattern 171 is disposed on the first electrode 151 and electrically connected to the first electrode 151. The second conductive pattern 172 is disposed on the second electrode 152 and electrically connected to the second electrode 152. The third conductive pattern 173 is disposed on the third electrode 160 and electrically connected to the first portion 161 of the third electrode 160. The first conductive pattern 171, the second conductive pattern 172, and the third conductive pattern 173 are structurally separated.

[0081] When the light-emitting element 10 is transferred onto a driving backplane (not shown), the first conductive pattern 171, the second conductive pattern 172, and the third conductive pattern 173 are used to connect the first electrode 151, the second electrode 152, and the third electrode 160 of the light-emitting element 10 to the driving backplane, thereby forming a display device.

[0082] For example, in this embodiment, the third electrode 160 may selectively include a second portion 162 located on the first surface Sa of the semiconductor structure S, and the third conductive pattern 173 may be selectively disposed on the second portion 162 of the third electrode 160 to be electrically connected to the first portion 161 of the third electrode 160. However, the present invention is not limited thereto. In other embodiments, the third conductive pattern 173 may also be disposed at other positions.

[0083] Please refer to Figure 1, in this embodiment, the first electrode 151 and the second electrode 152 of the light-emitting element 10 are disposed on the same side of the active layer 130; after the light-emitting element 10 is transposed and electrically connected to a driving backplane (not shown), the first conductive pattern 171 and the second conductive pattern 172 for electrically connecting the light-emitting element 10 and the driving backplane are disposed between the first electrode 151 and the second electrode 152 of the light-emitting element 10 and the driving backplane, and the light-emitting element 10 can be a flip chip light-emitting diode (flipchip LED). However, the present invention is not limited thereto. In other embodiments, the light-emitting element 10 can also be other forms of light-emitting diode elements, which will be illustrated with other drawings in the following paragraphs.

[0084] It must be noted here that the following embodiments follow the component numbers and some contents of the foregoing embodiments, where the same numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. For the description of the omitted parts, reference can be made to the foregoing embodiments, and the following embodiments will not be repeated.

[0085] Figure 5 It is a cross-sectional schematic view of a light-emitting element 10A according to an embodiment of the present invention.

[0086] Figure 5 The light-emitting element 10A of Figure 1 is similar to the light-emitting element 10, and the difference between the two is that: Figure 5 the light-emitting element 10A of

[0087] also includes an optical microstructure 180, which is disposed on the transmission path of the light beam L emitted by the active layer 130. Figure 5 For example.

[0088] Please refer to Figure 5, in this embodiment, the active layer 130 has a first region R1 and a second region R2. The second region R2 of the active layer 130 is located between the first region R1 of the active layer 130 and the sidewall Sc of the semiconductor structure S. The first region R1 is the middle region of the active layer 130. The second region R2 is the peripheral region of the active layer 130. The optical microstructure 180 of the light-emitting element 10A includes a first optical microstructure 181 overlapping the active layer 130. For example, in this embodiment, a negative bias voltage is applied to the third electrode 160, and the electric field generated by the third electrode 160 can concentrate the light-emitting range of the active layer 130 in the first region R1 (i.e., the middle region), and the light-emitting efficiency of the light-emitting element 10B is high. The first region R1 of the active layer 130 emits a light beam L, and the first optical microstructure 181 can converge the light beam L, thereby enabling the light-emitting element 10A to provide a special light field concentrated in the main viewing direction. In this embodiment, the first optical microstructure 181 can be a convex lens protruding in the direction z away from the active layer 130, but the present invention is not limited thereto.

[0089] Figure 6 It is a cross-sectional schematic diagram of the light-emitting element 10B according to an embodiment of the present invention. Figure 6 The light-emitting element 10B of Figure 5 is similar to the light-emitting element 10A of Figure 6 The optical microstructure 180 of Figure 5 is different from the optical microstructure 180 of

[0090] Please refer to Figure 6 , specifically, in this embodiment, the optical microstructure 180 of the light-emitting element 10B includes a second optical microstructure 182 overlapping the active layer 130. For example, in this embodiment, a negative bias voltage is applied to the third electrode 160, and the electric field generated by the third electrode 160 can concentrate the light-emitting range of the active layer 130 in the first region R1 (i.e., the middle region), and the light-emitting efficiency of the light-emitting element 10B is high. The first region R1 of the active layer 130 emits a light beam L, and the second optical microstructure 182 overlapping the active layer 130 can diverge the light beam L, thereby enabling the light-emitting element 10A to provide a special light field concentrated in the side viewing direction. In this embodiment, the second optical microstructure 182 can be a prism structure, but the present invention is not limited thereto.

[0091] Figure 7 It is a cross-sectional schematic diagram of the light-emitting element 10C according to an embodiment of the present invention. In particular, Figure 7 shows the situation of the light beam L transmission when the third electrode 160 has no bias voltage.

[0092] Figure 8 It is a cross-sectional schematic diagram of the light-emitting element 10C according to an embodiment of the present invention. In particular, Figure 8 shows the situation of the light beam L transmission when the third electrode 160 has a negative bias voltage.

[0093] Figure 7 and Figure 8 the light-emitting element 10C of Figure 5 is similar to the light-emitting element 10A of Figure 7 and Figure 8 the optical microstructure 180 of Figure 5 is different from the optical microstructure 180 of Figure 7 and Figure 8 Specifically, in this embodiment, the optical microstructure 180 includes a first optical microstructure 181 and a second optical microstructure 182. The first optical microstructure 181 and the second optical microstructure 182 respectively overlap the first region R1 and the second region R2 of the active layer 130. The first optical microstructure 181 is used to converge the light beam L, and the second optical microstructure 182 is used to diverge the light beam L.

[0094] In the Figure 7 embodiment, the third electrode 160 of the light-emitting element 10C can be made to have no bias voltage, and the first region R1 (i.e., the middle region) and the second region R2 (i.e., the peripheral region) of the active layer 130 can both emit the light beam L. The light beam L from the first region R1 can be transmitted along the main viewing direction through the first optical microstructure 181, and the light beam L from the second region R2 can be transmitted along the side viewing direction through the second optical microstructure 182. Thus, the light-emitting element 10C can provide a uniform light field in all directions.

[0095] In the Figure 8 embodiment, the third electrode 160 of the light-emitting element 10C can be made to have a negative bias voltage. The electric field generated by the third electrode 160 can cause the light-emitting range of the active layer 130 to be concentrated in the first region R1 (i.e., the middle region). The light beam L emitted from the first region R1 of the active layer 130 can be transmitted along the main viewing direction through the first optical microstructure 181. Thus, the light-emitting element 10C can provide a light field concentrated in the main viewing direction.

[0096] Please refer to Figure 7 and Figure 8 By adjusting the bias voltage of the third electrode 160, the first optical microstructure 181 and the second optical microstructure 182, the light field of the same light-emitting element 10C can be changed, so that a display device (not shown) including the light-emitting element 10C can be switched between different modes and applied in specific fields.

[0097] For example, in this embodiment, when the bias voltage of the third electrode 160 of the light-emitting element 10C is substantially 0, the light-emitting element 10C provides a uniform light field in all directions, so that the display device including the light-emitting element 10C can operate in a sharing mode; when the third electrode 160 of the light-emitting element 10C has a negative bias voltage, the light-emitting element 10C provides a light field concentrated in the main viewing direction, so that the display device including the light-emitting element 10C can operate in an anti-peeping mode. However, the present invention is not limited thereto. In other embodiments, the display device including the light-emitting element 10C can also be applied in other fields, such as but not limited to: the field of stereoscopic display.

[0098] Figure 9 FIG. is a cross-sectional schematic view of a light-emitting element 10D according to an embodiment of the present invention.

[0099] Figure 9 The light-emitting element 10D of Figure 1 is similar to the light-emitting element 10, and the difference between the two is that: Figure 9 The positions of the first conductive pattern 171, the second conductive pattern 172, and the third conductive pattern 173 of the light-emitting element 10D of Figure 1 are different from the positions of the first conductive pattern 171, the second conductive pattern 172, and the third conductive pattern 173 of the light-emitting element 10 of

[0100] Please refer to Figure 9 , specifically, in this embodiment, after the light-emitting element 10D is transposed and electrically connected to the driving backplane (not shown), the semiconductor structure S of the light-emitting element 10D is disposed between the first conductive pattern 171 and the driving backplane, between the second conductive pattern 172 and the driving backplane, and between the third conductive pattern 173 and the driving backplane. In other words, in this embodiment, the light-emitting element 10D can be a lateral light-emitting diode (lateral LED).

[0101] Figure 10 FIG. is a cross-sectional schematic view of a light-emitting element 10E according to an embodiment of the present invention. Figure 10 The light-emitting element 10E of Figure 9 is similar to the light-emitting element 10D, and the difference between the two is that: Figure 10 The light-emitting element 10E of

[0102] Figure 11 FIG. is a cross-sectional schematic view of a light-emitting element 10E according to an embodiment of the present invention. Figure 11 The light-emitting element 10F of Figure 9 is similar to the light-emitting element 10D, and the difference between the two is that: Figure 10 The light-emitting element 10E of

[0103] Figure 12 A cross-sectional schematic view of the light-emitting element 10G according to an embodiment of the present invention. Figure 12 The light-emitting element 10G is similar to Figure 9 the light-emitting element 10D. The difference between the two is that: Figure 12 the light-emitting element 10G further includes a first optical microstructure 181 and a second optical microstructure 182, which respectively overlap the first region R1 and the second region R2 of the active layer 130.

[0104] Figure 13 A cross-sectional schematic view of the light-emitting element 10H according to an embodiment of the present invention. Figure 13 The light-emitting element 10H is similar to Figure 1 the light-emitting element 10. The difference between the two is that: in Figure 13 this embodiment, the first electrode 151 and the second electrode 152 of the light-emitting element 10H are respectively disposed on different sides of the active layer 130, and the light-emitting element 10H is a vertical light-emitting diode (vertical LED). In addition, the light-emitting element 10H further includes an insulating layer 190. The insulating layer 190 is disposed on the third electrode 160, and the third conductive pattern 173 can be filled into the opening 190a of the insulating layer 190 to be electrically connected to the third electrode 160.

[0105] Figure 14 A cross-sectional schematic view of the light-emitting element 10I according to an embodiment of the present invention. Figure 14 The light-emitting element 10I is similar to Figure 13 the light-emitting element 10H. The difference between the two is that: in Figure 13 this embodiment, the third conductive pattern 173 and the second conductive pattern 172 are disposed on the same surface (i.e., the first surface Sa) of the semiconductor structure S; however, in Figure 14 this embodiment, the third conductive pattern 173 and the first conductive pattern 171 are disposed on the same surface (i.e., the first surface Sa) of the semiconductor structure S.

Claims

1. A light-emitting element, comprising: A semiconductor structure, comprising: A first-type semiconductor layer; A second-type semiconductor layer; and An active layer disposed between the first-type semiconductor layer and the second-type semiconductor layer; An insulating layer disposed on the semiconductor structure; A first electrode electrically connected to the first-type semiconductor layer; A second electrode electrically connected to the second-type semiconductor layer; and A third electrode, wherein the insulating layer is located between the third electrode and the semiconductor structure, the first electrode, the second electrode, and the third electrode are structurally separated, the third electrode has at least a first portion, and the first portion of the third electrode is disposed on a sidewall of the semiconductor structure; At least one first optical microstructure overlapping the active layer; Wherein the third electrode has a negative bias voltage.

2. The light-emitting element according to claim 1, wherein the sidewall of the semiconductor structure includes a sidewall of the active layer, and the first portion of the third electrode is disposed on the sidewall of the active layer.

3. The light-emitting element according to claim 2, wherein the sidewall of the semiconductor structure further includes a sidewall of the first-type semiconductor layer, and the first portion of the third electrode is further disposed on the sidewall of the first-type semiconductor layer.

4. The light-emitting element according to claim 3, wherein the sidewall of the semiconductor structure further includes a sidewall of the second-type semiconductor layer, and the first portion of the third electrode is further disposed on the sidewall of the second-type semiconductor layer.

5. The light-emitting element according to claim 1, further comprising: A first conductive pattern disposed on the first electrode and electrically connected to the first electrode; A second conductive pattern disposed on the second electrode and electrically connected to the second electrode; And A third conductive pattern disposed on the third electrode and electrically connected to the first portion of the third electrode, wherein the first conductive pattern, the second conductive pattern, and the third conductive pattern are structurally separated.

6. The light-emitting element according to claim 5, wherein the semiconductor structure has a first surface and a second surface opposite to each other, the sidewall of the semiconductor structure is disposed between the first surface and the second surface; the third electrode further has a second portion disposed on the first surface of the semiconductor structure and electrically connected to the first portion of the third electrode; the third conductive pattern is disposed on the second portion of the third electrode.

7. The light-emitting element according to claim 1, wherein the active layer emits a light beam, and the at least one first optical microstructure converges the light beam.

8. The light-emitting element according to claim 1, wherein the active layer has a first region and a second region, the second region of the active layer is located between the first region of the active layer and the sidewall of the semiconductor structure, and the light-emitting element further comprises: At least one second optical microstructure, wherein the at least one first optical microstructure and the at least one second optical microstructure respectively overlap the first region and the second region of the active layer.

9. The light-emitting element according to claim 8, wherein the active layer emits a light beam, the at least one first optical microstructure converges the light beam, and the at least one second optical microstructure diverges the light beam.

10. The light-emitting element according to claim 1, further comprising: at least one second optical microstructure overlapping the active layer, wherein the active layer emits a light beam, and the at least one second optical microstructure diverges the light beam.

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