Method for manufacturing semiconductor device, and cutting wafer-bonded integrated film and method for manufacturing same

Abstract

An aspect of the present application relates to a cutting grain-bonding integrated film including a base material layer, an adhesive layer, and a pressure-sensitive adhesive layer disposed between the base material layer and the adhesive layer and having a first region whose adhesive force with respect to the adhesive layer is previously reduced by irradiation of active energy rays, the adhesive force of the first region with respect to the adhesive layer being 6.0 N / 25 mm or more and 12.5 N / 25 mm or less as measured under conditions of a temperature of 23°C, a peeling angle of 30°, and a peeling speed of 60 mm / min.

Description

TECHNICAL FIELD

[0001] The present application relates to a manufacturing method of a semiconductor device, and a dicing die-bonding integrated film and a manufacturing method thereof BACKGROUND

[0002] A semiconductor device is manufactured through the following processes. First, a dicing process is performed in a state where a pressure-sensitive adhesive film for dicing is attached to a wafer. Thereafter, an expand process, a pickup process, a die bonding process, and the like are performed.

[0003] In a manufacturing process of a semiconductor device, a film called a dicing die-bonding integrated film is used. The film has a structure in which a base material layer, a pressure-sensitive adhesive layer, and an adhesive layer are sequentially stacked, and is used in the following manner, for example. First, a wafer is diced while the wafer is attached to the side of the adhesive layer and fixed to a dicing ring. Thus, the wafer is singulated into a plurality of chips. Next, the pressure-sensitive adhesive layer is weakened in adhesive force with respect to the adhesive layer by irradiating the pressure-sensitive adhesive layer with ultraviolet rays, and the adhesive sheet singulated from the pressure-sensitive adhesive layer along with the chips is picked up. Thereafter, the chips are mounted on a substrate or the like via the adhesive sheet to manufacture a semiconductor device. In addition, a laminate composed of the chips obtained by the dicing process and the adhesive sheet attached thereto is called a chip with an adhesive sheet.

[0004] A pressure-sensitive adhesive layer (dicing film) whose adhesive force is weakened by irradiation with ultraviolet rays as described above is called ultraviolet (UV) curable. In contrast, a pressure-sensitive adhesive layer whose adhesive force is maintained fixed without irradiation with ultraviolet rays in a manufacturing process of a semiconductor device is called pressure-sensitive. A dicing die-bonding integrated film provided with a pressure-sensitive pressure-sensitive adhesive layer has the following advantages: a process of irradiating ultraviolet rays does not need to be performed by a user (mainly a semiconductor device manufacturer), and equipment for the process is not required. Patent Literature 1 discloses a dicing die-bonding film which can be called UV curable from the aspect that the pressure-sensitive adhesive layer contains a component cured by ultraviolet rays, and on the other hand, can also be called pressure-sensitive from the aspect that ultraviolet rays are preliminarily irradiated only to a prescribed portion of the pressure-sensitive adhesive layer, and the user does not need to irradiate ultraviolet rays in a manufacturing process of a semiconductor device.

[0005] PRIOR ART DOCUMENTS

[0006] PATENT LITERATURE

[0007] Patent Literature 1: Japanese Patent No. 4443962 SUMMARY

[0008] Technical Problem to be Solved by the Invention

[0009] The pressure-sensitive adhesive layer of the die-bonding integrated film is required to have high adhesive force to the adhesive layer and the dicing ring in the die-cutting process. If the adhesive force of the pressure-sensitive adhesive layer is insufficient, peeling occurs between the adhesive layer and the pressure-sensitive adhesive layer along with high-speed rotation of the die-cutting blade, and the adhesive layer is broken, and pieces of the adhesive layer are scattered. This phenomenon is referred to as "DAF scattering". In addition, DAF means Die attach film. Alternatively, peeling of the dicing ring from the pressure-sensitive adhesive layer occurs due to the flow of dicing water (hereinafter, this phenomenon is referred to as "ring peeling"). In recent years, as wafers are thinned, processes for singulating wafers and adhesive layers by cooling expansion have increased. If the adhesive force of the pressure-sensitive adhesive layer is insufficient in the cooling expansion process, there is a phenomenon that the outer peripheral portion of the DAF is broken, pieces are scattered (DAF scattering), or peeling of the end portion of the die with the adhesive sheet from the pressure-sensitive adhesive layer (die edge peeling) occurs due to impact and stress at the time of expansion, and in some cases, a defective condition occurs in the subsequent process.

[0010] However, users of the die-bonding integrated film have a demand to perform irradiation of an active energy ray (for example, ultraviolet rays) under as constant conditions as possible. Therefore, there is a situation where, for example, even if the adhesive force of the pressure-sensitive adhesive layer changes depending on the change in the formulation of the die-bonding integrated film, it is difficult to ask the user to flexibly adjust the irradiation conditions of the active energy ray.

[0011] The present application provides a dicing die-bonding integrated film and a manufacturing method thereof, which are excellent in use convenience for a user and are advantageous for efficient manufacturing of a semiconductor device. In addition, the present application provides a manufacturing method of a semiconductor device using the above-described dicing die-bonding integrated film.

[0012] Means for Solving the Technical Problem

[0013] One aspect of the present application relates to a manufacturing method of a semiconductor device. The manufacturing method includes the following process.

[0014] (A) a dicing die-bonding integrated film preparation process in which a base material layer, a pressure-sensitive adhesive layer, and an adhesive layer are sequentially stacked, the pressure-sensitive adhesive layer having a first region whose adhesive force to the adhesive layer is preliminarily decreased by irradiation of an active energy ray;

[0015] (B) a process of performing stealth dicing or half-dicing using a blade on the wafer;

[0016] (C) a process of attaching the wafer to a region of the adhesive layer corresponding to the first region;

[0017] (D) a process of obtaining a die with an adhesive sheet by singulating the wafer and the adhesive layer by expanding the base material layer under a cooling condition;

[0018] (E) a process of reducing the adhesive force of the pressure-sensitive adhesive layer with respect to the die with the adhesive sheet by irradiating the pressure-sensitive adhesive layer with an active energy ray;

[0019] (F) a process of picking up the die with the adhesive sheet from the pressure-sensitive adhesive layer in a state where the base material layer is expanded; and

[0020] (G) a process of mounting the die with the adhesive sheet on a substrate or another die.

[0021] Further, the adhesive force of the first region with respect to the adhesive layer of the dicing die-bonding integrated film in the process (A) is 6.0 N / 25 mm or more and 12.5 N / 25 mm or less under conditions of a temperature of 23°C, a peeling angle of 30°, and a peeling speed of 60 mm / min.

[0022] According to the manufacturing method, the dicing die-bonding integrated film whose adhesive force of the pressure-sensitive adhesive layer with respect to the adhesive layer is adjusted in advance by irradiation of an active energy ray (first irradiation) is used, and the adhesive force of the pressure-sensitive adhesive layer with respect to the die with the adhesive sheet is reduced by irradiation of an active energy ray (second irradiation) in the process (E). Thus, generation of DAF scattering or chip edge peeling in the process (D) can be sufficiently suppressed, and excellent pickability can be achieved in the process (F).

[0023] The die with the adhesive sheet obtained in the process (D) can be a relatively large-sized die. That is, the die with the adhesive sheet can have a square or rectangular shape in plan view and have a side of 6.0 mm or more. The relatively large-sized die with the adhesive sheet is likely to be warped, and thus, the die with the adhesive sheet is peeled in the process (D), the die is broken in the process (F), or pick-up failure is likely to occur. According to the manufacturing method of the present application, these failures in the process (F) can be sufficiently suppressed.

[0024] The pressure-sensitive adhesive layer can have a second region having a larger adhesive force with respect to the adhesive layer than the first region. At this time, a dicing ring can be attached to the second region at the same time as the process (C) or before the process (D).

[0025] The cutting-die-bonding integrated film according to an aspect of the present application includes a base material layer, an adhesive layer, and a pressure-sensitive adhesive layer disposed between the base material layer and the adhesive layer and having a first region whose adhesive strength to the adhesive layer is reduced in advance by irradiation of active energy rays, the adhesive strength of the first region to the adhesive layer being 6.0 N / 25 mm or more and 12.5 N / 25 mm or less as measured under conditions of a temperature of 23°C, a peeling angle of 30°, and a peeling speed of 60 mm / min.

[0026] The cutting-die-bonding integrated film is pre-adjusted in the adhesive strength of the pressure-sensitive adhesive to the adhesive layer by irradiation of active energy rays. For example, even if the adhesive strength of the pressure-sensitive adhesive layer changes with a change in the formulation of the cutting-die-bonding integrated film, the manufacturer of the film can pre-adjust the adhesive strength and provide it to the user, so that the user can continue the manufacture of the semiconductor device without changing the irradiation conditions of the active energy rays, under the previous conditions.

[0027] From the viewpoint of excellent pick-up, the cutting-die-bonding integrated film described above is preferably such that the adhesive strength of the first region to the adhesive layer is 1.2 N / 25 mm or less as measured under conditions of a temperature of 23°C, a peeling angle of 30°, and a peeling speed of 60 mm / min after irradiation of the first region with ultraviolet rays in an amount of 150 mJ / cm 2 The cutting-die-bonding integrated film described above can be applied to a semiconductor device manufacturing process including a step of singulating a wafer into a plurality of chips having an area of 30 to 250 mm 2 The cutting-die-bonding integrated film described above can be applied to a semiconductor device manufacturing process including a step of singulating a wafer into a plurality of chips having an area of 30 to 250 mm

[0028] The manufacturing method of the cutting-die-bonding integrated film according to an aspect of the present application includes a step of sequentially forming a laminate including a pressure-sensitive adhesive layer containing a composition whose adhesive strength is reduced by irradiation of active energy rays and an adhesive layer formed on the surface of the pressure-sensitive adhesive layer on the surface of a base material layer, and a step of irradiating the pressure-sensitive adhesive layer included in the laminate with active energy rays on a region of the pressure-sensitive adhesive layer that will form a first region. Another aspect of the manufacturing method includes a step of forming a pressure-sensitive adhesive layer composed of a composition whose adhesive strength is reduced by irradiation of active energy rays on the surface of a base material layer, a step of irradiating a region of the pressure-sensitive adhesive layer that will form a first region with active energy rays, and a step of laminating an adhesive layer on the surface of the pressure-sensitive adhesive layer after the irradiation of active energy rays.

[0029] Effects of the Invention

[0030] According to the present application, there is provided a dicing die-bonding integrated film which is excellent in use convenience for a user and is advantageous for efficient production of a semiconductor device, and a production method thereof. In addition, according to the present application, there is provided a production method of a semiconductor device using the above-described dicing die-bonding integrated film. BRIEF DESCRIPTION OF DRAWINGS

[0031] Figure 1 (a) is a plan view showing an embodiment of a dicing die-bonding integrated film, Figure 1 (b) is a schematic cross-sectional view taken along Figure 1 (a) shown in (a).

[0032] Figure 2 is a schematic view showing a state in which a dicing ring is attached to a peripheral portion of a pressure-sensitive adhesive layer of a dicing die-bonding integrated film, and a wafer is attached to a surface of the adhesive layer.

[0033] Figure 3 is a cross-sectional view schematically showing a sample for measuring a 30° peeling strength of a pressure-sensitive adhesive layer with respect to the adhesive layer.

[0034] Figure 4 is a schematic cross-sectional view of an embodiment of a semiconductor device.

[0035] Figure 5 (a) and Figure 5 (b) are cross-sectional views schematically showing a process of producing a chip with an adhesive sheet.

[0036] Figure 6 (a) to Figure 6 (c) is a cross-sectional view schematically showing a process of producing a chip with an adhesive sheet.

[0037] Figure 7 (a) and Figure 7 (b) are cross-sectional views schematically showing a process of producing Figure 4 the semiconductor device shown in (a). DETAILED DESCRIPTION

[0038] Hereinafter, embodiments of the present application will be described in detail with reference to the accompanying drawings. In the following description, the same or corresponding portions will be denoted by the same reference signs, and overlapping descriptions will be omitted. In addition, the present application is not limited to the following embodiments. In this specification, (meth)acrylic acid refers to acrylic acid or methacrylic acid.

[0039] <Dicing Die-Bonding Integrated Film>

[0040] Figure 1 (a) is a plan view showing a dicing die-bonding integrated film according to the present embodiment, Figure 1 (b) is a schematic cross-sectional view taken along Figure 1A schematic cross-sectional view of B-B line of FIG. 10. The dicing die-bonded integrated film 10 (hereinafter referred to as "film 10" as the case can be) successively includes: a base material layer 1; a pressure-sensitive adhesive layer 3 having a first face F1 facing the base material layer 1 and a second face F2 opposite thereto; and an adhesive layer 5 provided so as to cover the central portion of the second face F2 of the pressure-sensitive adhesive layer 3. In the present embodiment, a case where a laminate of one pressure-sensitive adhesive layer 3 and one adhesive layer 5 is formed on a square base material layer 1 is exemplified, but the base material layer 1 can have a prescribed length (e.g., 100 m or more) and the laminate of the pressure-sensitive adhesive layer 3 and the adhesive layer 5 can be arranged at prescribed intervals in the longitudinal direction of the base material layer 1.

[0041] (Pressure-sensitive adhesive layer)

[0042] The pressure-sensitive adhesive layer 3 has: a first region 3a including at least an area Rw corresponding to the attachment position of the wafer W in the adhesive layer 5; and a second region 3b positioned so as to surround the first region 3a. Figure 1 The broken line in (a) indicates the boundary between the first region 3a and the second region 3b. The first region 3a and the second region 3b are composed of the same composition before irradiation of active energy rays. The first region 3a is a region that is in a state of decreased adhesion to the second region 3b by irradiation of active energy rays such as ultraviolet rays. The second region 3b is a region for attaching the dicing ring DR (see FIG. 11). Figure 2 The second region 3b is a region that is not irradiated with active energy rays and has high adhesion to the dicing ring DR.

[0043] The adhesion of the first region 3a to the adhesive layer 5 is 6.0 N / 25 mm or more and 12.5 N / 25 mm or less. The adhesion is the 30° peel strength measured under the conditions of a temperature of 23°C, a peel angle of 30°, and a peel speed of 60 mm / minute. Figure 3 is a cross-sectional view schematically showing a sample for measuring the 30° peel strength of the pressure-sensitive adhesive layer 3 in a state where a measurement sample (width 25 mm x length 100 mm) of the adhesive layer 5 is fixed to a support plate 80. By setting the adhesion (30° peel strength) of the first region 3a to the adhesive layer 5 to the above range, DAF scattering or chip edge peeling at the time of cooling expansion can be sufficiently suppressed. Thus, a semiconductor device can be manufactured at a sufficiently high yield. The lower limit value of the adhesion can be 6.5 N / 25 mm or 7.0 N / 25 mm, and the upper limit value can be 11.5 N / 25 mm or 10.5 N / 25 mm.

[0044] The adhesion of the first region 3a to the adhesive layer 5 is preferably 150 mJ / cm 21.2 N / 25 mm or more than 0.4 N / 25 mm and less than 1.2 N / 25 mm or more than 0.5 N / 25 mm and less than 1.1 N / 25 mm. According to the film 10 provided with the pressure-sensitive adhesive layer 3, excellent pickability can be achieved. In addition, the adhesive force, like the above, is a 30° peel strength measured at a temperature of 23°C, a peel angle of 30°, and a peel speed of 60 mm / min (refer to Figure 3 ).

[0045] The adhesive force of the second region 3b with respect to a stainless steel substrate is preferably more than 0.2 N / 25 mm. The adhesive force is a 90° peel strength measured at a temperature of 23°C, a peel angle of 90°, and a peel speed of 50 mm / min. By making the adhesive force more than 0.2 N / 25 mm, peeling of the ring at the time of cleaving the crystal can be sufficiently suppressed. The lower limit value of the adhesive force can be 0.3 N / 25 mm or 0.4 N / 25 mm, and the upper limit value is, for example, 2.0 N / 25 mm, or it can be 1.0 N / 25 mm.

[0046] The pressure-sensitive adhesive layer before irradiation with active energy rays is composed of, for example, a pressure-sensitive adhesive composition containing a (meth)acrylic resin, a photopolymerization initiator, and a crosslinking agent. The second region 3b not irradiated with active energy rays is composed of the same composition as the pressure-sensitive adhesive layer before irradiation with active energy rays. Hereinafter, the components contained in the pressure-sensitive adhesive composition will be described in detail.

[0047] [(Meth)acrylic Resin]

[0048] The pressure-sensitive adhesive composition preferably contains a (meth)acrylic resin having a chain-polymerizable functional group, and the functional group is at least one selected from the group consisting of an acryloyl group and a methacryloyl group. The content of the above-mentioned functional group in the pressure-sensitive adhesive layer before irradiation with active energy rays is, for example, 0.1 to 1.2 mmol / g, or it can be 0.3 to 1.0 mmol / g or 0.5 to 0.8 mmol / g. By making the content of the above-mentioned functional group more than 0.1 mmol / g, it is easy to form a region (first region 3a) in which the adhesive force is moderately decreased by irradiation with active energy rays, and on the other hand, by making it less than 1.2 mmol / g, excellent pickability can be achieved.

[0049] The (meth)acrylic resin can be obtained by synthesis using a known method. As the method of synthesis, for example, a solution polymerization method, a suspension polymerization method, an emulsion polymerization method, a bulk polymerization method, a precipitation polymerization method, a gas phase polymerization method, a plasma polymerization method, a supercritical polymerization method can be mentioned. In addition, as the kind of polymerization reaction, in addition to radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anionic polymerization, coordination polymerization, immortal polymerization and the like, a method such as atom transfer radical polymerization (ATRP) and reversible addition fragmentation chain transfer polymerization (RAFTP) can be mentioned. Among these, the solution polymerization method is used and synthesis is performed by radical polymerization, and in addition to the fact that economy is good, the reaction rate is high, and polymerization control is easy, it has the advantage that the resin solution obtained by polymerization can be directly used for compounding and the like.

[0050] Here, the method of obtaining the (meth)acrylic resin using the solution polymerization method and by radical polymerization is exemplified, and the method of synthesis of the (meth)acrylic resin is described in detail.

[0051] As the monomer used in the synthesis of the (meth)acrylic resin, there is no particular limitation as long as it has one (meth)acryloyl group in one molecule. As specific examples thereof, mention can be made of methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, t-butyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, lauryl (meth)acrylate, tridecyl (meth)acrylate, myristyl (meth)acrylate, pentadecyl (meth)acrylate, cetyl (meth)acrylate, behenyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, succinic acid mono(2-(meth)acryloyloxyethyl) ester and the like aliphatic (meth)acrylates; cyclopentyl (meth)acrylate, cyclohexyl (meth)acrylate, dicyclopentyl (meth)acrylate, dicyclopentenyl (meth)acrylate, isobornyl (meth)acrylate, tetrahydrophthalic acid mono(2-(meth)acryloyloxyethyl) ester, hexahydrophthalic acid mono(2-(meth)acryloyloxyethyl) ester and the like alicyclic (meth)acrylates; benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxy polyethylene glycol (meth)acrylate, nonylphenoxy polyethylene glycol (meth)acrylate, phenoxy polypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, 2-hydroxy-3-(2-naphthoxy)propyl (meth)acrylate and the like aromatic (meth)acrylates; 2-tetrahydrofurfuryl (meth)acrylate, N-(meth)acryloyloxyethyl hexahydrophthalimide, 2-(meth)acryloyloxyethyl-N-carbazole and the like heterocyclic (meth)acrylates, caprolactone-modified products of these compounds;ω-carboxyl-poly-caprolactone mono(meth)acrylate, glycidyl (meth)acrylate, α-ethyl glycidyl (meth)acrylate, α-propyl glycidyl (meth)acrylate, α-butyl glycidyl (meth)acrylate, 2-methyl glycidyl (meth)acrylate, 2-ethyl glycidyl (meth)acrylate, 2-propyl glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, α-ethyl-6,7-epoxyheptyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, and the like, which have both a vinyl unsaturated group and an epoxy group; (2-ethyl-2-oxetanyl)methyl (meth)acrylate, (2-methyl-2-oxetanyl)methyl (meth)acrylate, 2-(2-ethyl-2-oxetanyl)ethyl (meth)acrylate, 2-(2-methyl-2-oxetanyl)ethyl (meth)acrylate, 3-(2-ethyl-2-oxetanyl)propyl (meth)acrylate, 3-(2-methyl-2-oxetanyl)propyl (meth)acrylate, and the like, which have both a vinyl unsaturated group and an oxetanyl group; 2-(meth)acryloyloxyethyl isocyanate, which has both a vinyl unsaturated group and an isocyanate group; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, and the like, which have both a vinyl unsaturated group and a hydroxyl group, can be appropriately combined to obtain the (meth)acrylic resin as the target.

[0052] From the viewpoint of the reaction with the functional group-introducing compound or the crosslinking agent described later, the (meth)acrylic resin preferably has at least one functional group selected from a hydroxyl group, a glycidyl group, an amino group, and the like. As the monomer used for synthesizing the (meth)acrylic resin having a hydroxyl group, (meth)acrylic acid 2-hydroxyethyl ester, (meth)acrylic acid 2-hydroxypropyl ester, (meth)acrylic acid 4-hydroxybutyl ester, (meth)acrylic acid 3-chloro-2-hydroxypropyl ester, (meth)acrylic acid 2-hydroxybutyl ester, and the like, which have both a vinyl unsaturated group and a hydroxyl group, can be used alone or in combination of two or more.

[0053] As the monomer used for synthesizing the (meth)acrylic resin having a glycidyl group, there are exemplified (meth)acrylic acid glycidyl ester, (meth)acrylic acid α-ethyl glycidyl ester, (meth)acrylic acid α-propyl glycidyl ester, (meth)acrylic acid α-butyl glycidyl ester, (meth)acrylic acid 2-methyl glycidyl ester, (meth)acrylic acid 2-ethyl glycidyl ester, (meth)acrylic acid 2-propyl glycidyl ester, (meth)acrylic acid 3,4-epoxybutyl ester, (meth)acrylic acid 3,4-epoxyheptyl ester, (meth)acrylic acid α-ethyl-6,7-epoxyheptyl ester, (meth)acrylic acid 3,4-epoxycyclohexylmethyl ester, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, and the like, which have a vinyl unsaturated group and an epoxy group. These can be used singly or in combination of two or more.

[0054] The (meth)acrylic resin synthesized from these monomers preferably contains a chain-polymerizable functional group. The chain-polymerizable functional group is, for example, at least one selected from the group consisting of an acryloyl group and a methacryloyl group. The chain-polymerizable functional group can be introduced into the (meth)acrylic resin by, for example, reacting a functional group-introducing compound with the (meth)acrylic resin synthesized as described above. As specific examples of the functional group-introducing compound, there are exemplified 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1,1-(bisacryloyloxymethyl)ethyl isocyanate, an acryloyl monoisocyanate compound obtained by reacting a diisocyanate compound or a polyisocyanate compound with (meth)acrylic acid hydroxyethyl ester or (meth)acrylic acid 4-hydroxybutyl ester, an acryloyl monoisocyanate compound obtained by reacting a diisocyanate compound or a polyisocyanate compound with a polyhydric alcohol compound and (meth)acrylic acid hydroxyethyl ester, and the like. Of these, 2-methacryloyloxyethyl isocyanate is particularly preferred. These compounds can be used singly or in combination of two or more.

[0055] [Photopolymerization initiator]

[0056] As the photopolymerization initiator, there is no particular limitation as long as a chain-polymerizable active species is generated by irradiation of active energy rays (at least one selected from the group consisting of ultraviolet rays, electron beams, and visible rays), and, for example, a photoradical polymerization initiator is exemplified. Here, the chain-polymerizable active species refers to a species that starts a polymerization reaction by reacting with a chain-polymerizable functional group.

[0057] Examples of photoradical polymerization initiators include benzoin ketones such as 2,2-dimethoxy-1,2-diphenylethane-1-one; α-hydroxy ketones such as 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-2-methyl-1-phenylpropane-1-one, and 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propane-1-one; and 2-benzyl-2-dimethylamino-1-(4-morpholinylphenyl)-butane-1-one and 1,2-methyl-1-[4-(methylthio)phenyl]-2-morpholinylpropane-1-one. α-amino ketones such as ketones; oxime esters such as 1-[4-(phenylthio)phenyl]-1,2-octanedione-2-(benzoyl)oxime; phosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, and 2,4,6-trimethylbenzoyl diphenylphosphine oxide; phosphine oxides such as 2-(o-chlorophenyl)-4,5-diphenylimidazolium dimer, 2-(o-chlorophenyl)-4,5-di(methoxyphenyl)imidazolium dimer, and 2-(o-fluorophenyl)-4,5- Diphenylimidazolium dimers, 2-(o-methoxyphenyl)-4,5-diphenylimidazolium dimers, 2-(p-methoxyphenyl)-4,5-diphenylimidazolium dimers, and other 2,4,5-triarylimidazolium dimers; benzophenone compounds, N,N'-tetramethyl-4,4'-diaminobenzophenone, N,N'-tetraethyl-4,4'-diaminobenzophenone, 4-methoxy-4'-dimethylaminobenzophenone, and other benzophenone compounds; 2-ethylanthraquinone, phenanthraquinone, 2-tert-butylanthraquinone, octamethylanthraquinone, 1,2-benzoanthraquinone, 2 Quinone compounds such as 3-benzoanthraquinone, 2-phenylanthraquinone, 2,3-diphenylanthraquinone, 1-chloroanthraquinone, 2-methylanthraquinone, 1,4-naphthoquinone, 9,10-phenanthroquinone, 2-methyl-1,4-naphthoquinone, and 2,3-dimethylanthraquinone; benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, and benzoin phenyl ether; benzoin compounds such as benzoin, methyl benzoin, and ethyl benzoin; benzyl compounds such as benzyl dimethyl ketal; acridine compounds such as 9-phenylacridine and 1,7-bis(9,9'-acridylheptane); N-phenylglycine; and coumarin.

[0058] Relative to 100 parts by weight of (meth)acrylic resin, the content of photopolymerization initiator in the pressure-sensitive adhesive composition is, for example, 0.1 to 30 parts by weight, preferably 0.3 to 10 parts by weight, and more preferably 0.5 to 5 parts by weight. If the content of photopolymerization initiator is less than 0.1 parts by weight, the pressure-sensitive adhesive layer will not cure sufficiently after irradiation with active energy rays, which can easily lead to poor pickup. If the content of photopolymerization initiator exceeds 30 parts by weight, contamination of the adhesive layer (transfer of photopolymerization initiator to the adhesive layer) is likely to occur.

[0059] [Cross-linking agent]

[0060] A crosslinking agent is used, for example, for the purpose of controlling the elastic modulus and / or the adhesiveness of the pressure-sensitive adhesive layer. The crosslinking agent can be any compound having two or more functional groups in one molecule that can react with at least one functional group selected from a hydroxyl group, a glycidyl group, and an amino group, etc. possessed by the (meth)acrylic resin. As the bond formed by the reaction of the crosslinking agent with the (meth)acrylic resin, an ester bond, an ether bond, an amide bond, an imide bond, a urethane bond, a urea bond, etc. can be mentioned.

[0061] In the present embodiment, as the crosslinking agent, a compound having two or more isocyanate groups in one molecule is preferably used. If such a compound is used, it is easy to react with a hydroxyl group, a glycidyl group, and an amino group, etc. possessed by the (meth)acrylic resin, and a firm crosslinking structure can be formed.

[0062] As the compound having two or more isocyanate groups in one molecule, isocyanate compounds such as 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, lysine isocyanate, etc. can be mentioned.

[0063] As the crosslinking agent, a reaction product of the above isocyanate compound and a polyol having two or more OH groups in one molecule (an isocyanate group-containing oligomer) can also be used. As examples of the polyol having two or more OH groups in one molecule, ethylene glycol, propylene glycol, butylene glycol, 1,6-hexanediol, 1,8-octanediol, 1,9-nonanediol, 1,10-decanediol, 1,11-undecanediol, 1,12-dodecanediol, glycerol, pentaerythritol, dipentaerythritol, 1,4-cyclohexanediol, 1,3-cyclohexanediol, etc. can be mentioned.

[0064] Among these, as the crosslinking agent, a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyol having three or more OH groups in one molecule (an isocyanate group-containing oligomer) is more preferable. By using such an isocyanate group-containing oligomer as the crosslinking agent, the pressure-sensitive adhesive layer 3 forms a dense crosslinking structure, and thus the pressure-sensitive adhesive can be sufficiently inhibited from adhering to the adhesive layer 5 in the picking-up process.

[0065] The content of the crosslinking agent in the pressure-sensitive adhesive composition is appropriately set in accordance with the cohesive force and elongation at break required for the pressure-sensitive adhesive layer, and adhesion to the adhesive layer 5, and the like. Specifically, the content of the crosslinking agent is, for example, 3 to 30 parts by mass, preferably 4 to 15 parts by mass, and more preferably 7 to 10 parts by mass, relative to 100 parts by mass of the content of the (meth)acrylic resin. By setting the content of the crosslinking agent to the above range, the properties required for the pressure-sensitive adhesive layer in the dicing process and the properties required for the pressure-sensitive adhesive layer 3 in the die bonding process can be well balanced, and excellent pick-up properties can also be achieved.

[0066] If the content of the crosslinking agent is less than 3 parts by mass relative to 100 parts by mass of the content of the (meth)acrylic resin, the formation of the crosslinked structure tends to become insufficient, and thus the interfacial adhesion to the adhesive layer 5 does not sufficiently decrease in the pick-up process, and defects tend to occur at the time of picking up. On the other hand, if the content of the crosslinking agent exceeds 30 parts by mass relative to 100 parts by mass of the content of the (meth)acrylic resin, the pressure-sensitive adhesive layer 3 tends to become too hard, and thus the semiconductor chip tends to be peeled off in the expansion process.

[0067] The content of the crosslinking agent relative to the total mass of the pressure-sensitive adhesive composition is, for example, 0.1 to 20 mass%, and can also be 3 to 17 mass% or 5 to 15 mass%. By the content of the crosslinking agent being 0.1 mass% or more, a region (first region 3a) in which the adhesive force is moderately decreased is easily formed by irradiation with active energy rays, and on the other hand, by being 15 mass% or less, excellent pick-up properties can be achieved.

[0068] The thickness of the pressure-sensitive adhesive layer 3 is appropriately set in accordance with the conditions (temperature and tension, and the like) of the expansion process, and is, for example, 1 to 200 μm, preferably 5 to 50 μm, and more preferably 10 to 20 μm. If the thickness of the pressure-sensitive adhesive layer 3 is less than 1 μm, the adhesiveness tends to become insufficient, and if it exceeds 200 μm, the notch width is narrow at the time of expansion (stress is relaxed at the time of pushing on the pin), and pick-up tends to become insufficient.

[0069] The pressure-sensitive adhesive layer 3 is formed on the base material layer 1. As the method of forming the pressure-sensitive adhesive layer 3, a known method can be employed. For example, a laminate of the base material layer 1 and the pressure-sensitive adhesive layer 3 can be formed by a double-layer extrusion method, a varnish for forming the pressure-sensitive adhesive layer 3 can be prepared, applied to the surface of the base material layer 1, or a pressure-sensitive adhesive layer 3 can be formed on a release-treated film, and transferred to the base material layer 1.

[0070] The varnish for forming the pressure-sensitive adhesive layer 3 is preferably prepared using an organic solvent that dissolves the (meth)acrylic resin, the photopolymerization initiator, and the crosslinking agent and is volatilized by heating. Specific examples of the organic solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; alcohols such as methanol, ethanol, isopropanol, butanol, ethylene glycol, and propylene glycol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonates such as ethylene carbonate and propylene carbonate; polyhydric alcohol alkyl ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, and diethylene glycol diethyl ether; and polyhydric alcohol alkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, and diethylene glycol monoethyl ether acetate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone.

[0071] Of these, from the viewpoints of solubility and boiling point, for example, toluene, methanol, ethanol, isopropanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate, and N,N-dimethylacetamide are preferred. These organic solvents can be used singly or in combination of two or more. The solid content concentration of the varnish is generally preferably 10 to 60% by mass.

[0072] (Substrate layer)

[0073] As the base material layer 1, a known polymer sheet or film can be used without particular limitation, provided that the expansion process can be performed under low temperature conditions. Specifically, as the base material layer 1, mention can be made of crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, low-density linear polyethylene, polybutylene, poly-methyl-pentene, and the like polyolefins, ethylene-vinyl acetate copolymer, ionomeric resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyester such as polyethylene naphthalate, polycarbonate, polyimide, polyether ether ketone, polyimide, polyether imide, polyamide, wholly aromatic polyamide, polyphenyl sulfide, aramid (paper), glass, glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose-based resin, silicone resin, or a mixture of these mixed with a plasticizer, or a cured product that has been crosslinked by electron beam irradiation.

[0074] The base material layer 1 preferably has a surface having as a main component at least one resin selected from the group consisting of polyethylene, polypropylene, polyethylene-polypropylene random copolymer, and polyethylene-polypropylene block copolymer, and this surface is in contact with the pressure-sensitive adhesive layer 3. These resins are also good base materials from the viewpoints of characteristics such as Young's modulus, stress relaxation, and melting point, and price, and recycling of waste materials after use. The base material layer 1 can be a single layer, but can also have a multilayer structure in which layers composed of different materials are stacked as needed. In order to control the adhesion to the pressure-sensitive adhesive layer 3, surface roughening treatment such as mat treatment or corona treatment can also be performed on the surface of the base material layer 1.

[0075] (Adhesive layer)

[0076] A known adhesive composition constituting a die-bonding film can be used in the adhesive layer 5. Specifically, the adhesive composition constituting the adhesive layer 5 preferably contains an epoxy group-containing acrylic copolymer, an epoxy resin, and an epoxy resin curing agent. The adhesive layer 5 containing these components has the following characteristics and is preferred: excellent adhesion between the chip and the substrate, and between the chips; and also can impart electrode embeddability, wire embeddability, and the like; and can be bonded at low temperature in the die-bonding process, and excellent curing can be obtained in a short time, and has excellent reliability after molding with a sealing agent, and the like.

[0077] As the epoxy resin, for example, a difunctional epoxy resin such as a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a bisphenol S type epoxy resin, an alicyclic epoxy resin, an aliphatic chain type epoxy resin, a phenol novolac type epoxy resin, a cresol novolac type epoxy resin, a bisphenol A novolac type epoxy resin, a diglycidyl ether of a diphenol, a diglycidyl ether of a naphthalenediol, a diglycidyl ether of a phenol, a diglycidyl ether of an alcohol, and an alkyl-substituted body, a halide, a hydride, and the like of these, a phenol novolac type epoxy resin, a multifunctional epoxy resin, and an epoxy resin containing a heterocycle, and the like generally known epoxy resins can be used. These can be used alone or in combination of two or more. In addition, an ingredient other than the epoxy resin can be contained as an impurity within a range not impairing the characteristics.

[0078] As the epoxy resin curing agent, for example, a phenol resin obtained by allowing a phenol compound to react with a xylylene compound as a divalent linking group in the presence of no catalyst or an acid catalyst can be cited. As the phenol compound used in the production of the phenol resin, phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, p-ethylphenol, o-n-propylphenol, m-n-propylphenol, p-n-propylphenol, o-isopropylphenol, m-isopropylphenol, p-isopropylphenol, o-n-butylphenol, m-n-butylphenol, p-n-butylphenol, o-isobutylphenol, m-isobutylphenol, p-isobutylphenol, octylphenol, nonylphenol, 2,4-dimethylphenol, 2,6-dimethylphenol, 3,5-dimethylphenol, 2,4,6-trimethylphenol, resorcin, o-hydroquinone, p-hydroquinone, 4-methoxyphenol, o-phenylphenol, m-phenylphenol, p-phenylphenol, p-cyclohexylphenol, o-allylphenol, p-allylphenol, o-benzylphenol, p-benzylphenol, o-chlorophenol, p-chlorophenol, o-bromophenol, p-bromophenol, o-iodophenol, p-iodophenol, o-fluorophenol, m-fluorophenol, p-fluorophenol, and the like can be exemplified. These phenol compounds can be used alone or two or more kinds thereof can be used in mixture. As the xylylene compound as the divalent linking group used in the production of the phenol resin, the following xylylene dihalides, xylylene diglycols, and derivatives thereof can be used. That is, α,α'-dichloro-p-xylene, α,α'-dichloro-m-xylene, α,α'-dichloro-o-xylene, α,α'-dibromo-p-xylene, α,α'-dibromo-m-xylene, α,α'-dibromo-o-xylene, α,α'-diiodo-p-xylene, α,α'-diiodo-m-xylene, α,α'-diiodo-o-xylene, α,α'-dihydroxy-p-xylene, α,α'-dihydroxy-m-xylene, α,α'-dihydroxy-o-xylene, α,α'-dimethoxy-p-xylene, α,α'-dimethoxy-m-xylene, α,α'-dimethoxy-o-xylene, α,α'-diethoxy-p-xylene, α,α'-diethoxy-m-xylene, α,α'-diethoxy-o-xylene, α,α'-di-n-propoxy-p-xylene, α,α'-n-propoxy-m-xylene, α,α'-di-n-propoxy-o-xylene, α,α'-di-isopropoxy-p-xylene, α,α'-diisopropoxy-m-xylene, α,α'-diisopropoxy-o-xylene, α,α'-di-n-butoxy-p-xylene, α,α'-di-n-butoxy-m-xylene, α,α'-di-n-butoxy-o-xylene, α,α'-diisobutoxy-p-xylene, α,α'-diisobutoxy-m-xylene, α,α'-diisobutoxy-o-xylene, α,α'-di-t-butoxy-p-xylene, α,α'-di-t-butoxy-m-xylene, α,α'-di-t-butoxy-o-xylene can be cited. These can be used alone or two or more kinds thereof can be used in combination.

[0079] When the above phenol compound is reacted with a xylylene compound, a mineral acid such as hydrochloric acid, sulfuric acid, phosphoric acid, polyphosphoric acid, an organic carboxylic acid such as dimethylsulfuric acid, diethylsulfuric acid, p-toluenesulfonic acid, methanesulfonic acid, ethanesulfonic acid, a super acid such as trifluoromethanesulfonic acid, a strongly acidic ion exchange resin such as an alkane sulfonic acid type ion exchange resin, a super strongly acidic ion exchange resin such as a perfluoroalkane sulfonic acid type ion exchange resin (trade name: Nafion, manufactured by DuPont de Nemours, Inc., "Nafion" is a registered trademark), a natural and synthetic zeolite, an activated clay (acidic clay), and the like are used, and the reaction is carried out at 50°C to 250°C until the xylylene compound as a raw material substantially disappears and until the reaction composition becomes constant. The reaction time also depends on the raw material and the reaction temperature, and is approximately 1 hour to 15 hours or so, and in practice, it can be determined by tracking the reaction composition by gel permeation chromatography (GPC) or the like.

[0080] The epoxy group-containing acrylic copolymer is preferably a copolymer obtained using glycidyl acrylate or glycidyl methacrylate as a raw material in an amount of 0.5 to 6 mass% relative to the resulting copolymer. By being 0.5 mass% or more, a high bond force is easily obtained, and on the other hand, by being 6 mass% or less, gelation can be suppressed. The remaining portion can use a mixture of an alkyl acrylate, an alkyl methacrylate having an alkyl group having a carbon number of 1 to 8, and styrene, acrylonitrile, or the like. Among these, (meth)acrylic acid ethyl ester and / or (meth)acrylic acid butyl ester are particularly preferable. The mixing ratio is preferably adjusted in consideration of the Tg of the copolymer. If the Tg is less than -10°C, there is a tendency for the tackiness of the adhesive layer 5 in the B-stage state to increase, and there is a tendency for the workability to deteriorate. In addition, the upper limit value of the glass transition temperature (Tg) of the epoxy group-containing acrylic copolymer is, for example, 30°C. The polymerization method is not particularly limited, and for example, pearl polymerization, solution polymerization, or the like can be given. As a commercially available epoxy group-containing acrylic copolymer, for example, HTR-860P-3 (trade name, manufactured by Nagase Chemtex Corporation) can be given.

[0081] The weight average molecular weight of the epoxy group-containing acrylic copolymer is 100,000 or more, and if it is in this range, the adhesion and heat resistance are high, and it is preferably 300,000 to 3,000,000, and more preferably 500,000 to 2,000,000. If the weight average molecular weight is 300,000 or less, the filling property between the semiconductor chip and the substrate supporting the same can be inhibited from decreasing. The weight average molecular weight is a polystyrene conversion value obtained using gel permeation chromatography (GPC) and using a calibration curve based on standard polystyrene.

[0082] The adhesive layer 5 can further contain, as needed, a tertiary amine, an imidazole, a quaternary ammonium salt, or the like, as a curing accelerator. Specific examples of the curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimellitate. These can be used singly or in combination of two or more.

[0083] The adhesive layer 5 can further contain, as needed, an inorganic filler. Specific examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. These can be used singly or in combination of two or more.

[0084] The thickness of the adhesive layer 5 is, for example, 1 to 300 μm, preferably 5 to 150 μm, and more preferably 10 to 100 μm. If the thickness of the adhesive layer 5 is less than 1 μm, the adhesion tends to be insufficient, and on the other hand, if it exceeds 300 μm, the cutting property and the pick-up property at the time of expansion tend to be insufficient.

[0085] In addition, the adhesive layer 5 can be in a form not containing a thermosetting resin. For example, in the case where the adhesive layer 5 contains a (meth)acrylic copolymer containing a reactive group, the adhesive layer 5 can contain only the (meth)acrylic copolymer containing a reactive group, a curing accelerator, and a filler.

[0086] <Method for manufacturing a cutting-die-bonding integrated film>

[0087] The manufacturing method of the film 10 includes, in order, a step of producing a laminate on the surface of the base material layer 1, the laminate containing a pressure-sensitive adhesive layer composed of a pressure-sensitive adhesive composition whose adhesive force is decreased by irradiation of active energy rays and the adhesive layer 5 formed on the surface of the pressure-sensitive adhesive layer, and a step of irradiating the region of the pressure-sensitive adhesive layer included in the laminate, which becomes the first region 3a, with active energy rays. The amount of the active energy rays irradiated to the region which becomes the first region 3a is, for example, 10 to 1,000 mJ / cm 2 and can be 100 to 700 mJ / cm 2or 200 to 500 mJ / cm 2 .

[0088] The manufacturing method described above is a method in which a laminate of the pressure-sensitive adhesive layer and the adhesive layer 5 is first produced, and then, the specific region of the pressure-sensitive adhesive layer is irradiated with active energy rays. As described above, the first region 3a can also be formed by irradiating the pressure-sensitive adhesive layer before being bonded to the adhesive layer 5 with active energy rays. That is, the manufacturing method of the film 10 can also include, in order, a step of forming a pressure-sensitive adhesive layer on the surface of the substrate layer 1, the pressure-sensitive adhesive layer being composed of a composition whose adhesive force is decreased by irradiation with active energy rays; a step of irradiating the region of the pressure-sensitive adhesive layer where the first region 3a is to be formed with active energy rays; and a step of laminating the adhesive layer 5 on the surface of the pressure-sensitive adhesive layer 3 after the irradiation with active energy rays.

[0089]

[0090] Figure 4 is a schematic cross-sectional view of a semiconductor device according to the present embodiment. The semiconductor device 100 shown in the figure includes a substrate 70, four chips S1, S2, S3, S4 laminated on the surface of the substrate 70, wires W1, W2, W3, W4 electrically connecting electrodes (not shown) on the surface of the substrate 70 and the four chips S1, S2, S3, S4, and a sealing layer 50 sealing these.

[0091] The substrate 70 is, for example, an organic substrate, and can also be a metal substrate such as a lead frame. From the viewpoint of suppressing warping of the semiconductor device 100, the thickness of the substrate 70 is, for example, 70 to 140 μm, and can also be 80 to 100 μm.

[0092] The four chips S1, S2, S3, S4 are laminated via the cured product 5C of the adhesive sheet 5P. The shape of the chips S1, S2, S3, S4 in plan view is, for example, a square or a rectangle. The area of the chips S1, S2, S3, S4 is 30 to 250 mm 2 and can also be 40 to 200 mm 2 or 50 to 150 mm 2 ​The length of one side of the chip S1, the chip S2, the chip S3, and the chip S4 is, for example, 6.0 mm or more, and can be 7.0 to 18 mm or 8.0 to 15 mm. The thickness of the chip S1, the chip S2, the chip S3, and the chip S4 is, for example, 10 to 150 μm, and can be 20 to 80 μm. In addition, the length of one side of the four chips S1, S2, S3, and S4 can be the same or different from each other, and the same applies to the thickness. In addition, the four chips S1, S2, S3, and S4 can be chips having a small size. That is, the area of the chip S1, the chip S2, the chip S3, and the chip S4 can be less than 30 mm 2 , for example, 0.1 to 20 mm 2 or 1 to 15 mm 2 .

[0093] The manufacturing method of the semiconductor device 100 includes the following steps.

[0094] (A) Step of preparing the film 10

[0095] (B) Step of performing stealth dicing or half dicing using a blade on the wafer W

[0096] (C) Step of attaching the wafer W to a region Rw of the adhesive layer 5 corresponding to the first region

[0097] (D) Step of obtaining the adhesive sheet-equipped chip 8 in which the wafer W and the adhesive layer 5 are singulated by expanding the base material layer 1 under a cooling condition

[0098] (E) Step of reducing the adhesion of the pressure-sensitive adhesive layer 3 with respect to the adhesive sheet-equipped chip 8 by irradiating the pressure-sensitive adhesive layer 3 with an active energy ray

[0099] (F) Step of picking up the adhesive sheet-equipped chip 8 from the pressure-sensitive adhesive layer 3 in a state in which the base material layer 1 is expanded

[0100] (G) Step of mounting the adhesive sheet-equipped chip 8 on a substrate or another chip

[0101] An example of the manufacturing method of the semiconductor device 100 will be described in detail. First, a protective film (also referred to as a BG tape (backside grind tape)) is attached to the circuit surface Wa of the wafer W. Laser light is irradiated on the wafer W to form a plurality of lines L where the wafer W is to be cut (stealth dicing). After that, if necessary, the wafer W is subjected to backside grinding and polishing. In this example, stealth dicing using laser light is illustrated, but instead of this, the wafer W can be half-cut using a blade. Half-cutting means that the wafer W is not cut but a notch corresponding to the line L where the wafer W is to be cut is formed.

[0102] Next, as shown in Figure 5 (a), the film 10 is attached so as to contact the adhesive layer 5 with the back surface Wb of the wafer W. In addition, the dicing ring DR is attached to the second region 3b of the pressure-sensitive adhesive layer 3. Thereafter, the wafer W and the adhesive layer 5 are singulated by cold expansion under a temperature condition of 0°C to -15°C. That is, as shown in Figure 5 (b), the substrate layer 1 is given tension by pushing up the inner side region la of the dicing ring DR in the substrate layer 1 using the ring Ra. Thereby, the wafer W is cut along the cutting intended line L, and, in conjunction therewith, the adhesive layer 5 is cut into adhesive pieces 5P, and a plurality of die 8 with adhesive pieces are obtained on the surface of the pressure-sensitive adhesive layer 3. The die 8 with adhesive pieces is composed of the die S and the adhesive pieces 5P.

[0103] The inner side region la of the substrate layer 1 is shrunk by heating the inner side region la of the dicing ring DR. Figure 6 (a) is a cross-sectional view schematically showing a case where the inner side region la is heated by blowing of the heater H. By making the inner side region la shrink in a ring shape to give tension to the substrate layer 1, the interval of the adjacent die 8 with adhesive pieces can be enlarged. Thereby, the generation of pickup errors can be further suppressed, and the visibility of the die 8 with adhesive pieces in the pickup process can be improved.

[0104] Next, as shown in Figure 6 (b), the adhesive force of the pressure-sensitive adhesive layer 3 is reduced by irradiation of active energy (for example, ultraviolet ray UV). The amount of the active energy ray irradiated to the pressure-sensitive adhesive layer 3 is, for example, 10 to 1000 mJ / cm 2 , 100 to 700 mJ / cm 2 , or 200 to 500 mJ / cm 2 . Thereafter, as shown in Figure 6 (c), the die 8 with adhesive pieces is pushed up by the push-up jig 42, whereby the die 8 with adhesive pieces is peeled from the pressure-sensitive adhesive layer 3, and the die 8 with adhesive pieces is sucked and picked up by the suction chuck 44.

[0105] The die 8 with adhesive pieces is transported to an assembling device (not shown) of a semiconductor device, and is press-bonded to a circuit substrate or the like. As shown in Figure 7 (a), the die S1 (die S) of the first layer is press-bonded to a prescribed position of the substrate 70 via the adhesive piece 5P. Next, the adhesive piece 5P is cured by heating. Thereby, the adhesive piece 5P is cured to become a cured product 5C. From the viewpoint of reducing voids, the curing process of the adhesive piece 5P can also be performed under a pressurized environment.

[0106] In the same manner as the mounting of the chip S1 to the substrate 70, the chip S2 of the second layer is mounted on the surface of the chip S1. Further, the semiconductor device 100 is manufactured by mounting the chip S3 of the third layer and the chip S4 of the fourth layer Figure 7 (b) the structure 60. After the chips S1, S2, S3, S4 are electrically connected to the substrate 70 by the wires W1, W2, W3, W4, the semiconductor elements and the wires are sealed by the sealing layer 50, whereby the semiconductor device 100 shown in Figure 4 (b) the structure 60. After the chips S1, S2, S3, S4 are electrically connected to the substrate 70 by the wires W1, W2, W3, W4, the semiconductor elements and the wires are sealed by the sealing layer 50, whereby the semiconductor device 100 shown in

[0107] Embodiment

[0108] Hereinafter, the present application is more specifically described based on the embodiments, but the present application is not limited to these embodiments. In addition, unless otherwise specified, all chemicals are used as reagents.

[0109] Example 1

[0110] [Synthesis of Acrylic Resin]

[0111] The acrylic resin to be formulated in the pressure-sensitive adhesive layer was synthesized in the following manner. That is, a flask of 2000 ml in capacity, equipped with a three-one motor, a stirring blade, and a nitrogen introduction tube, was charged with the following ingredients.

[0112] • Ethyl acetate (solvent): 635 g

[0113] • 2-Ethylhexyl acrylate: 395 g

[0114] • 2-Hydroxyethyl acrylate: 100 g

[0115] • Methacrylic acid: 5 g

[0116] • Azobisisobutyronitrile: 0.2 g

[0117] After the contents were sufficiently stirred to be uniform, bubbling was performed at a flow rate of 500 ml / min for 60 minutes to degas the dissolved oxygen in the system. After being warmed to 78°C over 1 hour, the polymerization was performed for 6 hours. Subsequently, the reaction solution was transferred to a pressurized kettle of 2000 ml in capacity, equipped with a three-one motor, a stirring blade, and a nitrogen introduction tube, and warmed at 120°C and 0.28 MPa for 4.5 hours, and then cooled to room temperature (25°C, hereinafter the same).

[0118] Next, 490 g of ethyl acetate was added, stirred and diluted. After adding 0.025 g of methoxyphenol as a polymerization inhibitor, 0.10 g of dioctyltin dilaurate as a urethane-forming catalyst, 81 g of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko K.K., Karenz MOI (trade name)) was added, and after reaction at 70°C for 6 hours, it was cooled to room temperature. Thereafter, ethyl acetate was added to adjust the nonvolatile content in the acrylic resin solution to 35 mass%, and an (A) acrylic resin solution was obtained. The (A) acrylic resin has a chain-polymerizable functional group.

[0119] The solution containing the (A) acrylic resin obtained in the above manner was vacuum-dried at 60°C for one night. The solid content thus obtained was subjected to elemental analysis using a full-automatic elemental analyzer (manufactured by Elemental, trade name: vario EL), and the content of the introduced 2-methacryloyloxyethyl isocyanate was calculated from the nitrogen content, and the result was 0.89 mmol / g.

[0120] In addition, the polystyrene-conversion weight average molecular weight of the (A) acrylic resin was found using the following device. That is, GPC measurement was performed using SD-8022 / DP-8020 / RI-8020 manufactured by TOSOH CORPORATION, using a gel pack GL-A150-S / GL-A160-S manufactured by Hitachi Chemical Co., Ltd. as a column, and using tetrahydrofuran as an eluent. As a result, the polystyrene-conversion weight average molecular weight was 350,000.

[0121] [Production of a cut film]

[0122] A varnish for forming a pressure-sensitive adhesive layer was prepared by mixing the following components. The pressure-sensitive adhesive layer formed from the varnish is a layer cured by irradiation of ultraviolet rays. The amount of ethyl acetate (solvent) was adjusted so that the total solid content of the varnish was 25 mass%.

[0123] • Solution of (A) acrylic resin: 100 parts by mass (solid content)

[0124] • (B) photopolymerization initiator (1-hydroxycyclohexyl phenyl ketone, manufactured by Ciba Specialty Chemicals, Irgacure 184, "Irgacure" is a registered trademark): 2.0 parts by mass

[0125] • (C) Crosslinking agent (polyfunctional isocyanate, manufactured by Japan Polyurethane Industry Co., Ltd., Coronate L, solid content 75%) : 1.1 parts by mass (solid content)

[0126] • Ethyl acetate (solvent)

[0127] A polyethylene terephthalate film (width 450 mm, length 500 mm, thickness 38 μm) on which release treatment was performed on one face was prepared. On the face on which the release treatment had been performed, a varnish for forming a pressure-sensitive adhesive layer was applied using an applicator, and then dried at 80°C for 5 minutes. Thus, a laminate (cutting film) composed of the polyethylene terephthalate film and a pressure-sensitive adhesive layer (thickness 10 μm) formed thereon was obtained.

[0128] A polyolefin film (width 450 mm, length 500 mm, thickness 100 μm) on which corona treatment was performed on one face was prepared. The face on which the corona treatment had been performed was attached to the pressure-sensitive adhesive layer of the above laminate at room temperature. Next, the pressure-sensitive adhesive layer was transferred to the polyolefin film (cover film) by pressing using a rubber roll. Thereafter, the cutting film provided with the pressure-sensitive adhesive layer was obtained by leaving it at room temperature for three days.

[0129] [Production of Adhesive Film]

[0130] After cyclohexanone was added to the following ingredients and mixed by stirring, the mixture was kneaded using a bead mill for 90 minutes.

[0131] • Epoxy resin (YDCN-703 (trade name), manufactured by NIPPON STEEL Chemical & Material Co., Ltd., a cresol novolak-type epoxy resin, epoxy equivalent 210, molecular weight 1200, softening point 80°C) : 55 parts by mass

[0132] • Phenol resin (Milex XLC-LL (trade name), manufactured by Mitsui Chemicals, Inc., hydroxyl equivalent 175, water absorption 1.8%, weight loss on heating at 350°C 4%) : 45 parts by mass

[0133] • Silane coupling agent 1 (NUC A-189 (trade name), manufactured by Nippon Unicar Company Limited, γ-mercaptopropyltrimethoxysilane) : 1.7 parts by mass

[0134] • Silane coupling agent 2 (NUC A-1160 (trade name), manufactured by Nippon Unicar Company Limited, γ-ureidopropyltriethoxysilane) : 2 parts by mass

[0135] • Filler (Aerosil R972 (trade name), manufactured by NIPPON AEROSIL CO., LTD., silica, average particle diameter 0.016 μm): 32 parts by mass

[0136] In addition, "Aerosil R972" is a silica particle having an organic group (for example, methyl) on the surface, and is produced by coating dimethyldichlorosilane on the surface of a silica particle and hydrolyzing in a reactor at 400°C.

[0137] The following ingredients were added to the mixture of the above ingredients, and stirred and mixed. Thereafter, a varnish for adhesive layer formation was obtained by vacuum degassing.

[0138] • Acrylic rubber (HTR-860P-3 (trade name), manufactured by Nagase Chemtex Corporation., content of glycidyl acrylate or glycidyl methacrylate: 3 mass%, weight average molecular weight 800,000): 280 parts by mass

[0139] • Curing accelerator (Curezol 2PZ-CN (trade name), "Curezol" is a registered trademark, manufactured by Shikoku Chemicals Corporation, 1-cyanoethyl-2-phenylimidazole): 0.5 parts by mass

[0140] A polyethylene terephthalate film (thickness 35 μm) on which release treatment had been performed on one face was prepared. After the face on which the release treatment had been performed was coated with the varnish for adhesive layer formation, heat drying was performed at 140°C for 5 minutes. Thus, a laminate (crystal bonding film) composed of the polyethylene terephthalate film (carrier film) and the adhesive layer in a B-stage state (thickness 10 μm) formed thereon was obtained.

[0141] [Production of cut grain bonding integrated film]

[0142] The crystal bonding film obtained in the above manner was cut into a circular shape (diameter: 312 mm) together with the carrier film. After the cut grain tape from which the cover film was peeled was attached thereto at room temperature, it was left to stand for 1 day at room temperature. Thereafter, the cut grain tape was cut into a circular shape (diameter: 370 mm). The region (first region of pressure-sensitive adhesive layer) of the adhesive layer of the cut grain bonding integrated film obtained in this manner corresponding to the attachment position of the wafer was irradiated with ultraviolet rays using a high-pressure mercury lamp under the following conditions.

[0143] • Dominant wavelength of ultraviolet rays: 365 nm

[0144] • Illuminance of ultraviolet rays: 13 mW / cm 2

[0145] • Irradiation amount of ultraviolet rays: 20 mJ / cm2 2

[0146] • First region of pressure-sensitive adhesive layer: circular shape with a diameter of 302 mm

[0147] The cutting-die-bonded integrated film according to the present embodiment was obtained in the above-described manner. In addition, a plurality of cutting-die-bonded integrated films for use in various evaluation tests described later were produced.

[0148] Example 2

[0149] The irradiation amount of ultraviolet rays was set to 30 mJ / cm2 2 instead of 20 mJ / cm2 2 , and a plurality of cutting-die-bonded integrated films were obtained in the same manner as in Example 1 except for this.

[0150] Example 3

[0151] In the production of the varnish for forming the pressure-sensitive adhesive layer, the amount of the crosslinking agent was set to 0.45 parts by mass instead of 1.1 parts by mass, and a plurality of cutting-die-bonded integrated films were obtained in the same manner as in Example 2 except for this.

[0152] Comparative Example 1

[0153] In the production of the varnish for forming the pressure-sensitive adhesive layer, the amount of the crosslinking agent was set to 4.1 parts by mass instead of 1.1 parts by mass, and a plurality of cutting-die-bonded integrated films were obtained in the same manner as in Example 2 except for this.

[0154] Comparative Example 2

[0155] The irradiation amount of ultraviolet rays was set to 30 mJ / cm2 2 instead of 50 mJ / cm2 2 , and a plurality of cutting-die-bonded integrated films were obtained in the same manner as in Example 2 except for this.

[0156] Comparative Example 3

[0157] A plurality of cutting-die-bonded integrated films were obtained in the same manner as in Example 1 except for not performing ultraviolet irradiation.

[0158] Comparative Example 4

[0159] A plurality of cutting-die-bonded integrated films were obtained in the same manner as in Example 3 except for not performing ultraviolet irradiation.

[0160] [Evaluation Tests]

[0161] (1) Measurement of adhesive strength of pressure-sensitive adhesive layer (30° peeling strength) (after first UV irradiation)

[0162] The adhesive strength of the pressure-sensitive adhesive layer of the dicing die-bonding integrated film according to the Examples and Comparative Examples was evaluated by measuring the 30° peeling strength. That is, a sample having a width of 25 mm and a length of 100 mm was cut out from the dicing die-bonding integrated film. The peeling strength of the pressure-sensitive adhesive layer was measured using a tensile testing machine. The measurement conditions were set to a peeling angle of 30° and a tensile speed of 60 mm / min. In addition, the storage of the sample and the measurement of the peeling strength were performed in an environment having a temperature of 23°C and a relative humidity of 40%. The dicing die-bonding integrated films according to Examples 1 to 3 and Comparative Examples 1 and 2 were films that had been subjected to first UV irradiation. The results are shown in Tables 1 and 2. Although Comparative Examples 3 and 4 were not subjected to UV irradiation in the process of the dicing die-bonding integrated film, the results are shown in the column of "first UV irradiation" in Table 2 for convenience.

[0163] (2) Measurement of adhesive strength of pressure-sensitive adhesive layer (30° peeling strength) (after second UV irradiation)

[0164] For the dicing die-bonding integrated films according to Examples 1 to 3 and Comparative Examples 1 and 2, the second UV irradiation was performed under the following conditions corresponding to the second UV irradiation performed before picking up the chip with the adhesive sheet. Thereafter, the adhesive strength of the pressure-sensitive adhesive layer, i.e., the 30° peeling strength, was measured under the same conditions as described above. The results are shown in Tables 1 and 2. In addition, since Comparative Examples 3 and 4 were not subjected to UV irradiation in the process of the dicing die-bonding integrated film, the results are shown in the column of "second UV irradiation" in Table 2 for convenience, although it was the first UV irradiation.

[0165] <Second UV irradiation conditions>

[0166] • Wavelength of UV light: 365 nm

[0167] • Intensity of UV light: 100 mW / cm 2

[0168] • Amount of UV irradiation: 150 mJ / cm 2

[0169] (2) Processability evaluation

[0170] (i) Preparation of sample for processability evaluation

[0171] A protective tape (BG tape) was attached to the surface of a silicon wafer (diameter: 12 inches, thickness: 775 μm). Thereafter, the silicon wafer was subjected to stealth dicing. That is, a modification layer was formed inside the silicon wafer by irradiating laser light on the surface (back surface) of the silicon wafer on the opposite side to the side on which the BG tape was attached under the following conditions.

[0172] <Stealth dicing conditions>

[0173] • Stealth dicing device: DFL7361 (manufactured by DISCO CORPORATION)

[0174] • Laser oscillator type: semiconductor laser excitation Q-switch solid laser

[0175] • Wavelength: 1342 nm

[0176] • Frequency: 90 kHz

[0177] • Output: 1.7 W

[0178] • Number of channels: 2

[0179] • Chip size: 10 mm x 10 mm

[0180] • Dicing speed: 700 mm / second

[0181] The silicon wafer after the stealth dicing was polished to a thickness of 30 μm. A grinder polisher device (DGP8761, manufactured by DISCO CORPORATION) was used in the polishing. The dicing die-bonding integrated film was attached to the polished silicon wafer and the dicing ring under the following conditions. Thereafter, the BG tape was peeled from the surface of the silicon wafer.

[0182] <Attachment conditions>

[0183] • Attachment device: DFM2800 (manufactured by DISCO CORPORATION)

[0184] • Attachment temperature: 70°C

[0185] • Attachment speed: 10 mm / s

[0186] • Attachment tension level: Level 6

[0187] Next, cooling expansion was performed using a die separator (DDS2300, manufactured by DISCO CORPORATION) under the following conditions. Thereafter, the base material layer (polyethylene terephthalate film) of the dicing die-bonding integrated film was heat shrunk under the following conditions. Through these processes, the silicon wafer and the adhesive layer were singulated into a plurality of chips (size 10 mm x 10 mm) with the adhesive sheet.

[0188] <cooling expansion condition>

[0189] • cooling temperature: -15°C

[0190] • cooling time: 120 seconds

[0191] • push-up amount: 12 mm

[0192] • push-up speed: 200 mm / second

[0193] • holding time after push-up: 3 seconds

[0194] <heat shrinkage condition>

[0195] • heater temperature: 220°C

[0196] • heater rotation speed: 5° / second

[0197] • push-up amount: 8 mm

[0198] • cooling waiting time: 10 seconds

[0199] After singulating the silicon wafer and the adhesive layer, the pressure-sensitive adhesive layer was subjected to ultraviolet irradiation under the following conditions. This caused the pressure-sensitive adhesive layer to cure, reducing the adhesive force with respect to the adhesive layer.

[0200] <ultraviolet irradiation condition>

[0201] • intensity of ultraviolet rays: 100 mW / cm 2

[0202] • irradiation amount of ultraviolet rays: 150 mJ / cm 2

[0203] (ii) Evaluation of each process

[0204] (DAF flying)

[0205] After cooling expansion and heat shrinkage, DAF flying was evaluated according to the following criteria.

[0206] A: No DAF flying occurred at all.

[0207] B: No DAF flying occurred, but peeling or floating was observed at the interface between the adhesive layer and the pressure-sensitive adhesive layer.

[0208] C: DAF flying occurred at least once.

[0209] (chip edge peeling)

[0210] After the cooling expansion and the heat shrinkage, the peeling of the adhesive layer of the chip with the adhesive sheet from the pressure-sensitive adhesive layer was evaluated in accordance with the following criteria for the edge portion of the chip with the adhesive sheet.

[0211] A: The peeling was not observed at all in the edge portion.

[0212] B: The peeling was observed from a length of 1 mm or more and less than 2 mm from the edge portion.

[0213] C: The peeling of 2 mm or more and less than 3 mm was observed from the edge portion.

[0214] D: The peeling of 3 mm or more was observed from the edge portion.

[0215] (Cutting property of the adhesive layer)

[0216] The entire surface of the silicon wafer after the cooling expansion and the heat shrinkage was observed using a microscope, and the cutting property of the adhesive layer was evaluated in accordance with the following criteria.

[0217] A: The adhesive layer was completely cut.

[0218] D: There was a portion of the adhesive layer that was not cut at least once.

[0219] (Cut width)

[0220] The length of the gap (cut width) of the chip with the adhesive layer after singulation was measured using a microscope. The length of the cut width in the MD / TD direction was measured for each of two portions of the outer periphery of the silicon wafer (up, down, left, and right) and one portion of the central portion (total of 18 points), and the average value was calculated. The evaluation was performed in accordance with the following criteria.

[0221] S: The average value of the cut width was 100 μm or more and less than 150 μm.

[0222] A: The average value of the cut width was 70 μm or more and less than 100 μm.

[0223] B: The average value of the cut width was 50 μm or more and less than 70 μm.

[0224] (Pick-up property)

[0225] After the above evaluation, 100 chips with the adhesive sheet were picked up under the following conditions.

[0226] < Pick-up conditions >

[0227] • Die bonding device: DB-830P (manufactured by FASFORD TECHNOLOGY CO., LTD.)

[0228] • Ejector needle: EJECTOR NEEDLE SEN2-83-05 (diameter: 0.7 mm, tip shape: hemisphere with radius 350 μm, manufactured by Micromechanics)

[0229] • Push-up height: 250 μm

[0230] • Push-up speed: 1 mm / sec

[0231] • Number of ejector needles: 9

[0232] Evaluation Criteria

[0233] A: Success rate of picking up is 100%.

[0234] B: Success rate of picking up is 80% or more and less than 100%.

[0235] C: Success rate of picking up is 60% or more and less than 80%.

[0236] [Table 1]

[0237]

[0238] [Table 2]

[0239]

[0240]

[0241] The results of the process evaluation of the films involved in Examples 1 to 3 were all good. In particular, the evaluation of the notch width of Examples 1 and 2 was "S". The evaluation of the notch width of Example 3 was "A", although it was the same as that of Comparative Example 3, but the MD / TD balance was better than that of Comparative Example 3. From the viewpoint of achieving excellent picking up performance, the notch width is one of the items that are valued in the process of the stealth dicing.

[0242] Industrial Applicability

[0243] According to the present application, there is provided a dicing die-bonding integrated film which is excellent in use convenience for a user and is advantageous for efficiently manufacturing a semiconductor device, and a manufacturing method thereof. In addition, according to the present application, there is provided a manufacturing method of a semiconductor device using the above-described dicing die-bonding integrated film.

[0244] Explanation of Symbols

[0245] 1 - substrate layer, 3 - pressure-sensitive adhesive layer, 3a - first region, 3b - second region, 5 - adhesive layer, 8 - chip with adhesive sheet, 10 - dicing die-bonding integrated film, W - wafer.

Claims

1. A method for manufacturing a semiconductor device, comprising: (A) a step of preparing a dicing die-bonding integrated film in which a base material layer, a pressure-sensitive adhesive layer having a first region whose adhesive force to an adhesive layer is previously decreased by irradiation of active energy rays, and the adhesive layer are sequentially stacked; (B) a step of performing stealth dicing or half dicing using a blade on a wafer; (C) a step of attaching the wafer to a region in the adhesive layer corresponding to the first region; (D) a step of obtaining a die with an adhesive sheet in which the wafer and the adhesive layer are singulated by expanding the base material layer under a cooling condition; (E) a step of decreasing the adhesive force of the pressure-sensitive adhesive layer to the die with an adhesive sheet by irradiating the pressure-sensitive adhesive layer with active energy rays; (F) a step of picking up the die with an adhesive sheet from the pressure-sensitive adhesive layer in a state where the base material layer is expanded; and (G) a step of mounting the die with an adhesive sheet on a substrate or another die, the adhesive force of the first region to the adhesive layer of the dicing die-bonding integrated film in the step (A) is 6.0 N / 25 mm or more and 12.5 N / 25 mm or less as measured at a temperature of 23°C, a peeling angle of 30°, and a peeling speed of 60 mm / min.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the die with an adhesive sheet obtained in the step (D) has a square or rectangular shape in plan view and has a side of 6.0 mm or more.

3. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the pressure-sensitive adhesive layer has a second region having a larger adhesive force to the adhesive layer than the first region, a dicing ring is attached to the second region at the same time as the step (C) or before the step (D).

4. A dicing die-bonding integrated film, comprising: a base material layer; an adhesive layer; and a pressure-sensitive adhesive layer disposed between the base material layer and the adhesive layer and having a first region whose adhesive force to the adhesive layer is previously decreased by irradiation of active energy rays, the adhesive force of the first region to the adhesive layer is 6.0 N / 25 mm or more and 12.5 N / 25 mm or less as measured at a temperature of 23°C, a peeling angle of 30°, and a peeling speed of 60 mm / min.

5. The dicing die-bonding integrated film according to claim 4, wherein The first region was irradiated with 150 mJ / cm 2 The adhesive force of the first region with respect to the adhesive layer was 1.2 N / 25 mm or less as measured at a temperature of 23°C, a peeling angle of 30°, and a peeling speed of 60 mm / min after the first region was irradiated with ultraviolet light in an amount of 150 mJ / cm 6. The cutting-grain bonding integrated film according to claim 4 or 5, which is suitable for a semiconductor device manufacturing process including a process of singulating a wafer into a plurality of wafers each having an area of 30 to 250 mm 2 2>.

7. The dicing die-bonding integrated film according to claim 4 or 5, wherein the pressure-sensitive adhesive layer has a second region having a larger adhesive force to the adhesive layer than the first region.

8. A method for manufacturing a dicing die-bonding integrated film, the method for manufacturing a dicing die-bonding integrated film according to any one of claims 4 to 7, sequentially comprising: A process of producing a laminate on a surface of a substrate layer, the laminate including a pressure-sensitive adhesive layer composed of a composition whose adhesive force is decreased by irradiation of active energy rays and the adhesive layer formed on a surface of the pressure-sensitive adhesive layer; and A process of irradiating active energy rays to a region of the pressure-sensitive adhesive layer included in the laminate which becomes the first region.

9. A method for producing a cut grain bonded all-in-one film, which is the method for producing a cut grain bonded all-in-one film according to any one of claims 4 to 7, sequentially comprising: a process of forming a pressure-sensitive adhesive layer composed of a composition whose adhesive force is decreased by irradiation of active energy rays on a surface of a substrate layer; a process of irradiating active energy rays to a region of the pressure-sensitive adhesive layer which becomes the first region; and a process of laminating the adhesive layer on a surface of the pressure-sensitive adhesive layer after the irradiation of the active energy rays.

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