Compound semiconductor integrated circuit manufacturing method and related product

Abstract

The embodiment of the application discloses a compound semiconductor integrated circuit manufacturing method and related products, which are applied to a circuit manufacturing system and used for manufacturing a compound semiconductor integrated circuit integrated with a power amplifier and a filter, the power amplifier comprising an indium phosphide heterojunction bipolar transistor-based power amplifier, and the filter comprising a passive filter; the method comprises the following steps: obtaining an initial wafer, setting an epitaxial layer, a passivation layer and a metal layer on the initial wafer to obtain a first-form compound semiconductor integrated circuit, performing a preset front-side manufacturing process on the first-form compound semiconductor integrated circuit to obtain a second-form compound semiconductor integrated circuit, performing a preset back-side manufacturing process on the second-form compound semiconductor integrated circuit to obtain the compound semiconductor integrated circuit; and integrating radio frequency front-end circuits such as the power amplifier, the filter and a low-noise amplifier onto the same chip, which is beneficial to improving the efficiency of the compound semiconductor integrated circuit manufacturing.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of chip manufacturing, in particular to power amplifier and filter chips, and particularly to a compound semiconductor integrated circuit manufacturing method and related products. BACKGROUND

[0002] In wireless communication, in order to obtain higher transmission rate and better communication quality, the transmission frequency is getting higher and higher, and is entering the millimeter wave and terahertz frequency band. Millimeter wave refers to electromagnetic wave with a wavelength of 1mm-10mm, corresponding to a frequency range of 30GHz-300GHz. Terahertz refers to a communication frequency of 1THz, i.e. 1000GHz, corresponding to a wavelength of 300um or 0.3mm. Usually, the frequency range of millimeter wave communication is defined as 30-100GHz, and the frequency range of terahertz communication is defined as 0.1-2THz.

[0003] Indium phosphide (InP) material has the advantages of high electron mobility, good radiation resistance, large band gap, etc., and is used to make experimental millimeter wave and terahertz communication circuits, such as power amplifiers, low-noise amplifiers, etc.

[0004] The present application discloses an integrated circuit based on InP HBT (indium phosphide heterojunction bipolar transistor) circuit and a manufacturing method, to further improve product performance, reduce product price, and reduce product size. SUMMARY

[0005] The embodiments of the present application provide a compound semiconductor integrated circuit manufacturing method and related products, which integrate a power amplifier and a filter on the same chip, so as to reduce the size of the circuit and improve the performance of the circuit.

[0006] In a first aspect, the embodiments of the present application provide a compound semiconductor integrated circuit manufacturing method, applied to a circuit manufacturing system, wherein the circuit manufacturing system is used to manufacture a compound semiconductor integrated circuit integrated with a power amplifier and a filter, the power amplifier includes a power amplifier based on an indium phosphide heterojunction bipolar transistor, and the filter includes a passive filter; and the method includes:

[0007] An initial wafer is obtained, an epitaxial layer, a passivation layer and a metal layer are arranged on the initial wafer, and a first form compound semiconductor integrated circuit is obtained, wherein the epitaxial layer, the passivation layer and the metal layer form a position relationship from bottom to top, the metal layer includes a first metal layer and a second metal layer of the power amplifier, and the passivation layer is used to protect the compound semiconductor integrated circuit;

[0008] performing a preset front-side manufacturing process on the first-form compound semiconductor integrated circuit to obtain a second-form compound semiconductor integrated circuit, the second-form compound semiconductor integrated circuit comprising a power amplifier epitaxial layer of the power amplifier, the power amplifier epitaxial layer comprising an emitter, a base and a collector;

[0009] performing a preset back-side manufacturing process on the second-form compound semiconductor integrated circuit to obtain the compound semiconductor integrated circuit.

[0010] In a second aspect, an embodiment of the present application provides a compound semiconductor integrated circuit obtained by using the manufacturing method of the first aspect, the compound semiconductor integrated circuit integrated with a power amplifier and a filter, the power amplifier comprising a power amplifier based on an indium phosphide heterojunction bipolar transistor, and the filter comprising a passive filter.

[0011] The filter and the power amplifier share the same wafer as a substrate, and the wafer is provided with an epitaxial layer, a passivation layer and a metal layer, the epitaxial layer, the passivation layer and the metal layer forming a position relationship from bottom to top, and the metal layer comprises a first metal layer and a second metal layer of the power amplifier, and the passivation layer is used to protect the compound semiconductor integrated circuit.

[0012] The epitaxial layer of the power amplifier comprises an emitter, a base and a collector, and the power amplifier and the filter are isolated by an isolation groove.

[0013] In a third aspect, an embodiment of the present application provides a compound semiconductor integrated circuit manufacturing device applied to a circuit manufacturing system, the compound semiconductor integrated circuit comprising a power amplifier and a filter, the power amplifier comprising a power amplifier based on an indium phosphide heterojunction bipolar transistor, and the filter comprising an inductor and a capacitor.

[0014] The device comprises a processing unit and a communication unit, wherein,

[0015] The processing unit is configured to obtain an initial wafer, provide an epitaxial layer, a passivation layer and a metal layer on the initial wafer to obtain a first-form compound semiconductor integrated circuit, the epitaxial layer, the passivation layer and the metal layer forming a position relationship from bottom to top, the metal layer comprising a first metal layer and a second metal layer of the power amplifier, and the passivation layer being used to protect the compound semiconductor integrated circuit; perform a preset front-side manufacturing process on the first-form compound semiconductor integrated circuit to obtain a second-form compound semiconductor integrated circuit, the power amplifier epitaxial layer comprising an emitter, a base and a collector; and perform a preset back-side manufacturing process on the second-form compound semiconductor integrated circuit to obtain the compound semiconductor integrated circuit.

[0016] Fourthly, embodiments of this application provide a compound semiconductor integrated circuit manufacturing system, including: a processor, a memory, and one or more programs; the one or more programs are stored in the memory and configured to be executed by the processor, the programs including instructions for performing the steps described in any of the methods of the first aspect of this application.

[0017] Fifthly, embodiments of this application provide a computer-readable storage medium storing a computer program for electronic data interchange, the computer program specifically including instructions for performing some or all of the steps described in any method of the first aspect of this application.

[0018] Sixthly, embodiments of this application provide a computer program product, wherein the computer program product includes a computer program operable to cause a computer to perform some or all of the steps described in any method of the first aspect of this application. The computer program product may be a software installation package.

[0019] As can be seen, this application provides a method for manufacturing a compound semiconductor integrated circuit and related products, applied to a circuit manufacturing system. The circuit manufacturing system is used to manufacture a compound semiconductor integrated circuit integrating a power amplifier and a filter. The power amplifier includes a power amplifier based on an indium phosphide heterojunction bipolar transistor, and the filter includes a passive filter. The method includes: obtaining an initial wafer; depositing an epitaxial layer, a passivation layer, and a metal layer on the initial wafer to obtain a first-morphology compound semiconductor integrated circuit. The epitaxial layer, the passivation layer, and the metal layer are arranged in a bottom-to-top positional relationship. The metal layer includes a first metal layer and a second metal layer of the power amplifier. The passivation layer is used to protect the compound semiconductor integrated circuit. A first-order compound semiconductor integrated circuit is manufactured using a predetermined front-side process to obtain a second-order compound semiconductor integrated circuit. The second-order compound semiconductor integrated circuit includes the power amplifier and the filter. The epitaxial layer of the power amplifier includes an emitter, a base, and a collector. A predetermined back-side process is then performed on the second-order compound semiconductor integrated circuit to obtain the compound semiconductor integrated circuit. Integrating radio frequency front-end circuits, including the power amplifier, filter, low-noise amplifier, and RF switch, onto the same chip provides a satisfactory radio frequency front-end circuit for future mobile communications. This is beneficial for meeting the requirements of millimeter-wave and terahertz communications for smaller size, higher integration, and higher performance, thereby improving the efficiency of compound semiconductor integrated circuit manufacturing. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1A This is a schematic diagram of the structure of a radio frequency front-end module disclosed in an embodiment of this application;

[0022] Figure 1A This is a schematic diagram of another radio frequency front-end module disclosed in the embodiments of this application;

[0023] Figure 2A This is a schematic diagram of a compound semiconductor integrated circuit manufacturing method disclosed in an embodiment of this application;

[0024] Figure 2B This is an example diagram of another compound semiconductor integrated circuit manufacturing process disclosed in the embodiments of this application;

[0025] Figure 2C This is an example diagram of another compound semiconductor integrated circuit manufacturing process disclosed in the embodiments of this application;

[0026] Figure 2D This is an example diagram of another compound semiconductor integrated circuit manufacturing process disclosed in the embodiments of this application;

[0027] Figure 3 This is a schematic diagram of the structure of a compound semiconductor integrated circuit disclosed in an embodiment of this application;

[0028] Figure 4 This is a schematic diagram of the structure of a compound semiconductor integrated circuit manufacturing system disclosed in an embodiment of this application;

[0029] Figure 5 This is a functional unit block diagram of a compound semiconductor integrated circuit manufacturing apparatus disclosed in an embodiment of this application. Detailed Implementation

[0030] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present application.

[0031] The terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.

[0032] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0033] In the radio frequency (RF) front-end, power amplifiers and filters are core components. In 5G communication, passive filters will be widely used, while power amplifiers will employ high-performance indium phosphide (IP) heterojunction bipolar transistors (HPTBs). Currently, filters and IPT-based power amplifiers are fabricated separately and then integrated onto a circuit board for end users after packaging. Alternatively, the separately fabricated power amplifiers and filters can be integrated into a single module during packaging.

[0034] This patent employs a power amplifier based on indium phosphide heterojunction bipolar transistors (IPBs). Indium phosphide offers numerous advantages, including a direct-transition bandgap structure, high electro-optical conversion efficiency and electron mobility, ease of fabrication into semi-insulating materials, suitability for high-frequency microwave circuits, high operating temperature, and strong radiation resistance. Power amplifiers based on IPBs will find increasingly widespread application in future wireless communications, including wireless base stations, mobile phones, smart terminals, Wi-Fi devices, as well as satellite communications and aerospace.

[0035] Figure 1A This is a schematic diagram of the structure of a radio frequency front-end module provided in an embodiment of this application, including a low-noise amplifier, a power amplifier, a filter, and a switch; the radio frequency front-end module transmits the received signal to the radio frequency transceiver and simultaneously receives the transmitted signal from the radio frequency transceiver.

[0036] Currently, such as Figure 1AAs shown, the filter, low-noise amplifier, and power amplifier based on indium phosphide heterojunction bipolar transistors are fabricated separately. They are then packaged and integrated onto a circuit board for delivery to the end user. Alternatively, the separately fabricated power amplifier, low-noise amplifier, and filter can be integrated into a single module during packaging.

[0037] Figure 1B This is a schematic diagram of another radio frequency front-end module provided in this application embodiment, including a compound semiconductor integrated circuit and a switch. The compound semiconductor integrated circuit includes a power amplifier, a low-noise amplifier, and a filter, such as... Figure 1B As shown, two, more, or all circuits of the mobile communication radio frequency front end, including power amplifiers, filters, and low-noise amplifiers, are fabricated on the same chip to form an integrated power amplifier, low-noise amplifier, and filter chip, in order to further reduce the size of the circuit and improve its performance.

[0038] In view of the above-mentioned technical status, this application provides a method for manufacturing compound semiconductor integrated circuits, and the embodiments of this application are described in detail below.

[0039] like Figure 2A As shown, this application provides a method for manufacturing a compound semiconductor integrated circuit, applied to a circuit manufacturing system. The circuit manufacturing system is used to manufacture a compound semiconductor integrated circuit integrating a power amplifier and a filter. The power amplifier includes a power amplifier based on an indium phosphide heterojunction bipolar transistor, and the filter includes a passive filter. The method includes:

[0040] S201, Obtain an initial wafer, and deposit an epitaxial layer, a passivation layer, and a metal layer on the initial wafer to obtain a first-morphology compound semiconductor integrated circuit. The epitaxial layer, the passivation layer, and the metal layer are arranged in a bottom-to-top positional relationship. The metal layer includes a first metal layer and a second metal layer of the power amplifier. The passivation layer is used to protect the compound semiconductor integrated circuit.

[0041] The specific implementation of setting the epitaxial layer on the wafer can be accomplished by metal-organic chemical vapor deposition or molecular beam epitaxy.

[0042] The filters can be classified into low-pass filters, high-pass filters, band-pass filters, and band-stop filters based on their frequency selectability.

[0043] The filter can be composed of inductors and capacitors. The inductor is made of metal coils and can be a square winding, a circular winding, or other shapes. The thickness, width, number of turns, and spacing of the inductor are determined according to the specific design and application, and are not limited here. The capacitor can be square or rectangular. The dielectric material of the capacitor is generally silicon nitride or silicon oxide, but can also be other dielectric materials, such as hafnium silicate, zirconium silicate, hafnium dioxide, and zirconium dioxide, which have high dielectric constants, to further increase the capacitance density and reduce the capacitor area. This is not limited here.

[0044] S202, a preset front-side manufacturing process is performed on the first type of compound semiconductor integrated circuit to obtain a second type of compound semiconductor integrated circuit. The second type of compound semiconductor integrated circuit includes the power amplifier epitaxial layer of the power amplifier, and the power amplifier epitaxial layer includes an emitter, a base, and a collector.

[0045] The structure, metal, and manufacturing method of the emitter, base, and collector can vary, and no specific limitation is made here.

[0046] The epitaxial layer consists of, from bottom to top, a sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer.

[0047] S203, a preset back-side fabrication process is performed on the second-type compound semiconductor integrated circuit to obtain the compound semiconductor integrated circuit.

[0048] The back-side manufacturing process may also include wafer thinning and polishing operations. The thinning process may employ an etching process, which is consistent with existing manufacturing processes and will not be elaborated here.

[0049] As can be seen, this application provides a method for manufacturing compound semiconductor integrated circuits and related products, applied to a circuit manufacturing system. The circuit manufacturing system is used to manufacture compound semiconductor integrated circuits integrating a power amplifier and a filter. The power amplifier includes a power amplifier based on an indium phosphide heterojunction bipolar transistor, and the filter includes a passive filter. The method includes: obtaining an initial wafer; forming an epitaxial layer, a passivation layer, and a metal layer on the initial wafer to obtain a first-form compound semiconductor integrated circuit. The epitaxial layer, the passivation layer, and the metal layer are arranged in a bottom-to-top positional relationship. The metal layer includes a first metal layer and a second metal layer of the power amplifier. The passivation layer is used to protect the compound semiconductor integrated circuit. A pre-defined front-side manufacturing process is performed on the first-state compound semiconductor integrated circuit to obtain a second-state compound semiconductor integrated circuit. The second-state compound semiconductor integrated circuit includes a power amplifier epitaxial layer of the power amplifier, and the power amplifier epitaxial layer includes an emitter, a base, and a collector. A pre-defined back-side manufacturing process is then performed on the second-state compound semiconductor integrated circuit to obtain the compound semiconductor integrated circuit. This integrates radio frequency front-end circuits, including power amplifiers, filters, low-noise amplifiers, and radio frequency switches, onto the same chip, providing a satisfactory radio frequency front-end circuit for future mobile communications. This is beneficial for meeting the requirements of millimeter-wave and terahertz communications for smaller size, higher integration, and higher performance, thereby improving the efficiency of compound semiconductor integrated circuit manufacturing.

[0050] In one possible example, such as Figure 2B As shown, the filter includes an inductor and a capacitor; the process of performing a preset front-side manufacturing process on the first-type compound semiconductor integrated circuit to obtain the second-type compound semiconductor integrated circuit includes: etching the first metal layer and the second metal layer; connecting the upper electrode of the capacitor to the second metal layer through a metal channel; connecting the input port of the inductor to the second metal layer of the power amplifier; connecting the output port of the inductor to the upper electrode of the capacitor; setting the passivation layer to protect the power amplifier, the inductor, and the capacitor; etching the epitaxial layer to form an isolation groove to obtain the power amplifier epitaxial layer, the inductor epitaxial layer, and the capacitor epitaxial layer; and fabricating the emitter, the base, and the collector on the power amplifier epitaxial layer and the passivation layer.

[0051] The isolation groove can be created by an etching process.

[0052] The connection between the upper electrode, the second metal layer, the input port and the output port can be made by etching through holes and making metal interconnects, or by other means, such as connecting the inner port to the outside of the winding through an air bridge process. No specific limitation is made here.

[0053] There are various ways to fabricate the inductor, such as etching and metal stripping. The etching method will be used as an example. A metal layer is fabricated by vacuum evaporation or sputtering deposition. Then, the inductor is coated, aligned, exposed and developed. The first morphology of the inductor is obtained by metal etching. The first morphology of the inductor is then removed by removing the adhesive and cleaning to obtain the inductor.

[0054] In this configuration, the inductor is fabricated on the passivation layer, and the metal winding is composed of the first metal layer, fabricated simultaneously with the first metal layer. Alternatively, the inductor can be fabricated on the surface of the epitaxial layer, with the metal winding composed of the emitter metal, fabricated simultaneously with the emitter metal. Furthermore, the inductor can be fabricated on the intermetallic dielectric layer, with the metal winding composed of the second metal layer, fabricated simultaneously with the second metal layer. Even further, when needed, the inductors can be fabricated simultaneously on the aforementioned surfaces, with the metal windings composed of the emitter metal, the first metal layer, and the second metal layer, respectively, thereby achieving the goal of reducing chip size.

[0055] The capacitor is fabricated by means of fabricating a first metal layer on a substrate, fabricating a first dielectric layer on top of the first metal layer (the first dielectric layer is generally fabricated by chemical deposition), etching a first via on top of the first dielectric layer to fabricate an intermetallic dielectric layer (the intermetallic dielectric layer can be made of polyimide resin or benzocyclobutene, or materials such as silicon nitride and silicon oxide), etching a second via on the intermetallic dielectric layer to fabricate a second metal layer, and simultaneously fabricating the connection between the first metal layer and the second metal layer.

[0056] The execution order of the manufacturing process of etching the first metal layer and the second metal layer and the manufacturing process of etching the epitaxial layer to form the isolation groove is not limited. The manufacturing process of etching the first metal layer and the second metal layer can be executed first, followed by the manufacturing process of etching the epitaxial layer to form the isolation groove. Alternatively, the manufacturing process of etching the epitaxial layer to form the isolation groove can be executed first, followed by the manufacturing process of etching the first metal layer and the second metal layer. The manufacturing processes of etching the epitaxial layer to form the isolation groove and etching the first metal layer and the second metal layer can also be executed simultaneously or asynchronously.

[0057] The metal channel serves to connect the power amplifier, the capacitor, and the inductor. Therefore, one electrode of the capacitor needs to be electrically connected to one electrode of the power amplifier, and the other electrode of the capacitor needs to be connected to the resistor. The connection methods can be varied, and the manufacturing processes corresponding to the connection methods can be the same or different. No single limitation is made here.

[0058] As can be seen, in this example, the filter consists of a capacitor and an inductor. The first metal layer and the second metal layer are etched. The upper electrode of the capacitor is connected to the second metal layer through a metal channel. The input port of the inductor is connected to the second metal layer of the power amplifier, and the output port of the inductor is connected to the upper electrode of the capacitor. The passivation layer is provided to protect the power amplifier, the inductor, and the capacitor. At the same time, the epitaxial layer is etched to form an isolation groove, resulting in the epitaxial layer of the power amplifier, the epitaxial layer of the inductor, and the epitaxial layer of the capacitor. The emitter, the base, and the collector are fabricated on the epitaxial layer of the power amplifier and the passivation layer. This improves the performance of the compound semiconductor integrated circuit and optimizes the manufacturing method of the compound semiconductor integrated circuit.

[0059] In one possible example, such as Figure 2C As shown, the filter further includes a resistor; the process of performing a preset front-side manufacturing process on the first-type compound semiconductor integrated circuit to obtain the second-type compound semiconductor integrated circuit includes: setting a thin-film resistor, wherein the metal layer, the thin-film resistor, and the passivation layer are arranged in a top-to-bottom positional relationship; etching the first metal layer and the second metal layer, wherein the upper electrode of the capacitor is connected to the second metal layer through a metal channel, the input port of the inductor is connected to the second metal layer of the power amplifier, the output port of the inductor is connected to the upper electrode of the capacitor, and the upper electrode of the capacitor is connected to the input port of the resistor through a metal channel; etching the epitaxial layer to form an isolation groove, thereby obtaining the power amplifier epitaxial layer, the inductor epitaxial layer, the capacitor epitaxial layer, and the resistor epitaxial layer.

[0060] The fabrication of the resistor includes etching and / or metal stripping methods, fabricating a thin-film resistor layer by vacuum evaporation, sputtering or chemical deposition, applying adhesive, aligning, exposing and developing the thin-film resistor layer, etching the thin-film resistor, and removing and cleaning the thin-film resistor.

[0061] The materials used for the thin-film resistors include Ni-Co, Ta, Si, and cermet resistive films, as well as Au-Cr and Ni-P resistive films.

[0062] As can be seen, in this example, the filter consists of a resistor, a capacitor, and an inductor. A thin-film resistor is provided, and the metal layer, the thin-film resistor, and the passivation layer are arranged in a top-to-bottom positional relationship. The first metal layer and the second metal layer are etched. The upper electrode of the capacitor is connected to the second metal layer through a metal channel. The input port of the inductor is connected to the second metal layer of the power amplifier, and the output port of the inductor is connected to the upper electrode of the capacitor. The upper electrode of the capacitor is connected to the input port of the resistor through a metal channel. The epitaxial layer is etched to form an isolation groove to isolate the power amplifier, the inductor, the capacitor, and the resistor.

[0063] In one possible example, such as Figure 2D As shown, after etching the epitaxial layer to form an isolation groove, the method further includes: setting an emitter cap layer on the epitaxial layer; and setting an emitter layer, a base layer, a collector layer and a sub-collector layer below the cap layer, wherein the emitter layer, the base layer, the collector layer and the sub-collector layer are arranged in a top-to-bottom positional relationship.

[0064] The epitaxial layer includes a substrate underneath, and the size of the substrate can be 2-6 inches (50-150mm).

[0065] The structure, metal, and manufacturing method of the emitter, base, and collector can vary, and no specific limitation is made here.

[0066] The back hole and the back hole metal can be connected to the collector electrode to enhance circuit performance, but no specific limitation is made here.

[0067] In one possible example, the back-side fabrication process includes fabricating a back via, a back via metal layer, and a back metal layer for the power amplifier. The process of performing a predetermined back-side fabrication process on the second-type compound semiconductor integrated circuit to obtain the compound semiconductor integrated circuit includes: etching the wafer and the power amplifier epitaxial layer to form a back via of the power amplifier; depositing metal on the inner side of the back via to form a back via metal layer for the power amplifier; and depositing metal in the lower region of the wafer to form a back metal layer for the power amplifier.

[0068] In this process, after implementing the back-hole process, the emitter of the power amplifier is grounded by connecting to the back metal through the back-hole metal.

[0069] The method of etching the wafer and the epitaxial layer of the power amplifier to form the back hole of the power amplifier also includes creating a back hole under the inductor and the capacitor to connect the port that needs to be grounded to the back metal for grounding, which is not specifically limited here.

[0070] As can be seen, in this example, the wafer and the epitaxial layer of the power amplifier are etched to form the back hole of the power amplifier; metal is disposed on the inner side of the back hole to form the back hole metal layer of the power amplifier.

[0071] Please see Figure 3 , Figure 3 This application provides a schematic diagram of the structure of a compound semiconductor integrated circuit 3000. The compound semiconductor integrated circuit 3000 is manufactured based on the manufacturing process of the above-described method embodiment. The compound semiconductor integrated circuit integrates a power amplifier 3100 and a filter 3200. The power amplifier 3100 includes a power amplifier based on an indium phosphide heterojunction bipolar transistor. An epitaxial layer is disposed below the filter 3200 on the filter side.

[0072] The filter 3200 and the power amplifier 3100 share the same wafer as a substrate. An epitaxial layer 3310, a passivation layer 3320, and a metal layer 3330 are disposed on the wafer. The epitaxial layer 3310, the passivation layer 3320, and the metal layer 3330 are arranged in a bottom-to-top positional relationship. The metal layer 3330 includes a first metal layer 3131 and a second metal layer 3132 of the power amplifier. The passivation layer 3320 is used to protect the compound semiconductor integrated circuit 3000.

[0073] The epitaxial layer 3310 includes the power amplifier epitaxial layer of the power amplifier and the epitaxial layer on the filter side. The power amplifier epitaxial layer includes an emitter 3111, a base 3112 and a collector 3113. The filter and the power amplifier are isolated by an isolation groove.

[0074] As can be seen, this application provides a method for manufacturing a compound semiconductor integrated circuit and related products, applied to a circuit manufacturing system. The circuit manufacturing system is used to manufacture a compound semiconductor integrated circuit integrating a power amplifier and a filter. The power amplifier includes a power amplifier based on an indium phosphide heterojunction bipolar transistor, and the filter includes an inductor and a capacitor. The method includes: obtaining an initial wafer; depositing an epitaxial layer, a passivation layer, and a metal layer on the initial wafer to obtain a first-morphology compound semiconductor integrated circuit. The epitaxial layer, the passivation layer, and the metal layer are arranged in a bottom-to-top positional relationship. The metal layer includes a first metal layer and a second metal layer of the power amplifier. The passivation layer is used to protect the compound semiconductor integrated circuit. A first-type compound semiconductor integrated circuit is manufactured using a predetermined front-side process to obtain a second-type compound semiconductor integrated circuit. The second-type compound semiconductor integrated circuit includes a power amplifier epitaxial layer of the power amplifier, which includes an emitter, a base, and a collector. A predetermined back-side process is then performed on the second-type compound semiconductor integrated circuit to obtain the compound semiconductor integrated circuit. Integrating radio frequency front-end circuits, including power amplifiers, filters, and low-noise amplifiers, onto the same chip provides a satisfactory radio frequency front-end circuit for future mobile communications. This is beneficial for meeting the requirements of millimeter-wave and terahertz communications for smaller size, higher integration, and higher performance, thereby improving the efficiency of compound semiconductor integrated circuit manufacturing.

[0075] In one possible example, the filter includes an inductor and a capacitor; the upper electrode of the capacitor is connected to the second metal layer through a metal channel, the input port of the inductor is connected to the second metal layer of the power amplifier, and the output port of the inductor is connected to the upper electrode of the capacitor; the emitter, the base, and the collector are fabricated on the epitaxial layer of the power amplifier and the passivation layer.

[0076] In one possible example, the filter further includes a resistor; the metal layer, the thin-film resistor, and the passivation layer are positioned from top to bottom; the upper electrode of the capacitor is connected to the second metal layer through a metal channel, the input port of the inductor is connected to the second metal layer of the power amplifier, the output port of the inductor is connected to the upper electrode of the capacitor, and the upper electrode of the capacitor is connected to the input port of the resistor through a metal channel; the power amplifier, the inductor, the capacitor, and the resistor are isolated by an isolation groove.

[0077] In one possible example, the epitaxial layer includes a cap layer, an emitter layer, a base layer, a collector layer, and a sub-collector layer, wherein the emitter layer, the base layer, the collector layer, and the sub-collector layer are arranged in a top-to-bottom positional relationship.

[0078] In one possible example, the power amplifier is provided with a back aperture; a back aperture metal layer is provided on the inner side of the back aperture.

[0079] With the above Figure 2A The embodiments shown are consistent; please refer to [link / reference]. Figure 4 , Figure 4 This is a schematic diagram of the structure of a compound semiconductor integrated circuit manufacturing system 400 provided in an embodiment of this application. As shown in the figure, the compound semiconductor integrated circuit manufacturing system includes a processor 401, a memory 402, a communication interface 403, and one or more programs 404. The one or more programs 404 are stored in the memory 402 and configured to be executed by the processor 401. The programs 404 include instructions for performing any step as described in the embodiment of the compound semiconductor integrated circuit manufacturing method.

[0080] The foregoing mainly describes the solutions of the embodiments of this application from the perspective of the method execution process. It is understood that, in order to achieve the above functions, the compound semiconductor integrated circuit manufacturing system includes corresponding hardware structures and / or software modules for executing each function. Those skilled in the art should readily recognize that, in conjunction with the units and algorithm steps of the various examples described in the embodiments provided herein, this application can be implemented in hardware or a combination of hardware and computer software. Whether a function is executed in hardware or by computer software driving hardware depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0081] This application embodiment can divide the compound semiconductor integrated circuit manufacturing system into functional units according to the above method example. For example, each function can be divided into separate functional units, or two or more functions can be integrated into one processing unit. The integrated unit can be implemented in hardware or as a software functional unit. It should be noted that the unit division in this application embodiment is illustrative and only represents one logical functional division. In actual implementation, there may be other division methods.

[0082] Figure 5This is a functional unit block diagram of the compound semiconductor integrated circuit manufacturing apparatus 500 involved in the embodiments of this application. The compound semiconductor integrated circuit manufacturing apparatus 500 is applied to a circuit manufacturing system for manufacturing compound semiconductor integrated circuits integrating power amplifiers and filters. The power amplifier includes a power amplifier based on an indium phosphide heterojunction bipolar transistor, and the filter includes a passive filter. The compound semiconductor integrated circuit manufacturing apparatus 500 includes a processing unit 501 and a communication unit 502, wherein the processing unit 501 is used to perform any of the steps described in the above method embodiments.

[0083] The compound semiconductor integrated circuit manufacturing apparatus 500 may further include a storage unit 503 for storing program code and data of the mobile terminal. The processing unit 501 may be a processor, the communication unit 502 may be a touch screen or a transceiver, and the storage unit 503 may be a memory.

[0084] This application also provides a computer storage medium storing a computer program for electronic data exchange. The computer program causes a computer to perform some or all of the steps of any of the compound semiconductor integrated circuit manufacturing methods described in the above embodiments of the compound semiconductor integrated circuit manufacturing method, wherein the computer includes an electronic device.

[0085] This application also provides a computer program product, which includes a computer program operable to cause a computer to perform some or all of the steps of any of the compound semiconductor integrated circuit manufacturing methods described in the above embodiments of the compound semiconductor integrated circuit manufacturing method, wherein the computer includes an electronic device.

[0086] It should be noted that, for the sake of simplicity, the aforementioned embodiments of the compound semiconductor integrated circuit manufacturing methods are all described as a series of actions. However, those skilled in the art should understand that this application is not limited to the described order of actions, as some steps may be performed in other orders or simultaneously according to this application. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions and modules involved are not necessarily essential to this application.

[0087] Those skilled in the art will understand that all or part of the steps in the various methods of the above-described embodiments of the compound semiconductor integrated circuit manufacturing method can be implemented by a program instructing related hardware. The program can be stored in a computer-readable storage medium, which may include: flash drive, read-only memory (ROM), random access memory (RAM), disk or optical disk, etc.

[0088] The embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principle and implementation of the compound semiconductor integrated circuit manufacturing method of this application. The description of the above embodiments is only for the purpose of helping to understand the method and its core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation and application scope based on the ideas of the compound semiconductor integrated circuit manufacturing method of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

[0089] It is understood that any product that is controlled or configured to perform the processing method of the flowchart described in the embodiments of the compound semiconductor integrated circuit manufacturing method of this application, such as the processing device, electronic device and computer-readable storage medium of the above flowchart, falls within the scope of the related products described in this application.

[0090] Obviously, those skilled in the art can make various modifications and variations to the compound semiconductor integrated circuits provided in this application without departing from the spirit and scope of this application. Therefore, if these modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include these modifications and variations.

Claims

1. A method for manufacturing compound semiconductor integrated circuits, characterized in that, The method is applied to a circuit manufacturing system for manufacturing compound semiconductor integrated circuits that integrate power amplifiers and filters, wherein the power amplifier includes a power amplifier based on an indium phosphide heterojunction bipolar transistor, and the filter includes a passive filter; the method includes: An initial wafer is obtained, and an epitaxial layer, a passivation layer, and a metal layer are formed on the initial wafer to obtain a first-morphology compound semiconductor integrated circuit. The epitaxial layer, the passivation layer, and the metal layer are arranged in a bottom-to-top positional relationship. The metal layer includes a first metal layer and a second metal layer of the power amplifier. The passivation layer is used to protect the compound semiconductor integrated circuit. A preset front-side manufacturing process is performed on the first-type compound semiconductor integrated circuit to obtain a second-type compound semiconductor integrated circuit. The second-type compound semiconductor integrated circuit includes a power amplifier epitaxial layer of the power amplifier. The power amplifier epitaxial layer includes an emitter, a base, and a collector. The filter and the power amplifier are isolated by an isolation groove. A preset back-side fabrication process is performed on the second-type compound semiconductor integrated circuit to obtain the compound semiconductor integrated circuit. The back-side fabrication process includes fabricating a back via, a back via metal layer, and a back metal layer for the power amplifier. The process includes: etching the wafer and the epitaxial layer of the power amplifier to form a back via of the power amplifier; depositing metal on the inner side of the back via to form a back via metal layer for the power amplifier; and depositing metal on the lower region of the wafer to form a back metal layer for the power amplifier. The back via metal layer is connected to the collector electrode, and the emitter electrode is connected to the back metal layer and grounded through the back via metal layer.

2. The method according to claim 1, characterized in that, The filter includes an inductor and a capacitor; the process of performing a preset front-side manufacturing process on the first-type compound semiconductor integrated circuit to obtain the second-type compound semiconductor integrated circuit includes: The first metal layer and the second metal layer are etched. The upper electrode of the capacitor is connected to the second metal layer through a metal channel. The input port of the inductor is connected to the second metal layer of the power amplifier. The output port of the inductor is connected to the upper electrode of the capacitor. The passivation layer is provided to protect the power amplifier, the inductor, and the capacitor; The epitaxial layer is etched to form an isolation groove, thereby obtaining the power amplifier and the filter; The emitter, the base, and the collector are fabricated on the epitaxial layer of the power amplifier.

3. The method according to claim 2, characterized in that, The filter further includes a resistor; the process of performing a preset front-side manufacturing process on the first-type compound semiconductor integrated circuit to obtain the second-type compound semiconductor integrated circuit includes: A thin-film resistor is provided, wherein the metal layer, the thin-film resistor, and the passivation layer are arranged in a top-to-bottom positional relationship; The first metal layer and the second metal layer are etched. The upper electrode of the capacitor is connected to the second metal layer through a metal channel. The input port of the inductor is connected to the second metal layer of the power amplifier. The output port of the inductor is connected to the upper electrode of the capacitor. The upper electrode of the capacitor is connected to the input port of the resistor through a metal channel. The epitaxial layer is etched to form an isolation groove to isolate the power amplifier from the filter, the filter including the inductor, the capacitor and the resistor.

4. The method according to claim 3, characterized in that, After etching the epitaxial layer to form the isolation groove, the method further includes: A transmitter cap layer is provided on the epitaxial layer of the power amplifier; Below the cap layer of the emission area, an emission layer, a base layer, a collection layer, and a sub-collector layer are provided, and the emission layer, the base layer, the collection layer, and the sub-collector layer are arranged in a top-to-bottom positional relationship.

5. A compound semiconductor integrated circuit, characterized in that, The compound semiconductor integrated circuit integrates a power amplifier and a filter, the power amplifier including a power amplifier based on an indium phosphide heterojunction bipolar transistor, and the filter including a passive filter. The filter and the power amplifier share the same wafer as a substrate. An epitaxial layer, a passivation layer, and a metal layer are disposed on the wafer. The epitaxial layer, the passivation layer, and the metal layer are arranged in a bottom-to-top positional relationship. The metal layer includes a first metal layer and a second metal layer of the power amplifier. The passivation layer is used to protect the compound semiconductor integrated circuit. The power amplifier epitaxial layer includes an emitter, a base, and a collector. The filter and the power amplifier are isolated by an isolation groove. The thickness of the power amplifier epitaxial layer meets the design requirements of the power amplifier. The power amplifier has a back via formed by etching the wafer and the epitaxial layer of the power amplifier; a back via metal layer is provided on the inner side of the back via; a back metal layer is provided on the lower region of the wafer; the back via metal layer is connected to the collector electrode; and the emitter is connected to the back metal layer and grounded through the back via metal layer.

6. The compound semiconductor integrated circuit according to claim 5, characterized in that, The filter includes an inductor and a capacitor; The upper electrode of the capacitor is connected to the second metal layer through a metal channel, the input port of the inductor is connected to the second metal layer of the power amplifier, and the output port of the inductor is connected to the upper electrode of the capacitor. The emitter, the base, and the collector are fabricated on the epitaxial layer of the power amplifier.

7. The compound semiconductor integrated circuit according to claim 6, characterized in that, The filter also includes a resistor; The metal layer, the thin film resistor, and the passivation layer are arranged in a top-to-bottom positional relationship; The upper electrode of the capacitor is connected to the second metal layer through a metal channel, the input port of the inductor is connected to the second metal layer of the power amplifier, the output port of the inductor is connected to the upper electrode of the capacitor, and the upper electrode of the capacitor is connected to the input port of the resistor through a metal channel.

8. The compound semiconductor integrated circuit according to claim 7, characterized in that, The lower region includes the area on the bottom end face of the wafer that corresponds to the power amplifier.

9. A compound semiconductor integrated circuit manufacturing apparatus, characterized in that, The compound semiconductor integrated circuit, applied in a circuit manufacturing system, includes a power amplifier and a filter. The power amplifier includes an indium phosphide heterojunction bipolar transistor, and the filter includes an inductor and a capacitor. The device includes a processing unit and a communication unit. The processing unit is used to acquire an initial wafer, and to deposit an epitaxial layer, a passivation layer and a metal layer on the initial wafer to obtain a first-morphology compound semiconductor integrated circuit. The epitaxial layer, the passivation layer and the metal layer are arranged in a bottom-to-top positional relationship. The metal layer includes a first metal layer and a second metal layer of the power amplifier. The passivation layer is used to protect the compound semiconductor integrated circuit. And a pre-defined front-side manufacturing process is performed on the first-type compound semiconductor integrated circuit to obtain a second-type compound semiconductor integrated circuit, the second-type compound semiconductor integrated circuit including a power amplifier epitaxial layer of the power amplifier, the power amplifier epitaxial layer including an emitter, a base and a collector, and the filter and the power amplifier are isolated by an isolation groove; The method also includes performing a predetermined back-side fabrication process on the second-type compound semiconductor integrated circuit to obtain the compound semiconductor integrated circuit. The back-side fabrication process includes fabricating a back via, a back via metal layer, and a back metal layer for the power amplifier. The process includes: etching the wafer and the power amplifier epitaxial layer to form a back via of the power amplifier; depositing metal on the inner side of the back via to form a back via metal layer for the power amplifier; and depositing metal in the lower region of the wafer to form a back metal layer for the power amplifier. The back via metal layer is connected to the collector electrode, and the emitter electrode is connected to the back metal layer and grounded through the back via metal layer.

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