Method for electrical testing of semiconductor devices and testing structure
CN114783500BActive Publication Date: 2026-08-28CHANGXIN MEMORY TECH INC
Patent Information
- Application Number
- CN202210398929.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-04-15
- Publication Date
- 2026-08-28
- Estimated Expiration
- 2042-04-15
AI Technical Summary
Technical Problem
然而,现有测试方法测试结果偏差较大,准确率较低
Benefits of technology
[0041]在本公开的一种示例性实施例中,各所述字线之间均等间距分布,所述第二导电结构与所述第三导电结构的间距大于相邻分布的两个所述字线的间距。
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Figure CN114783500B_ABST
Abstract
The present disclosure relates to the technical field of semiconductor, and discloses a method for testing electrical property of semiconductor device and a testing structure. The method comprises: providing a semiconductor structure, wherein the semiconductor structure comprises an array region and a bulk lead-out region, the array region comprises a plurality of spaced-apart word lines, and each word line is provided with a conductive contact plug and a bit line on both sides thereof; forming conductive structures of the lead-out bit line, the conductive contact plug, the bulk lead-out region, any word line and the word line adjacent to the both sides of the word line, respectively; and applying voltages to the conductive structures, respectively, to complete the electrical property test. The method can reduce the deviation of test results and improve the test accuracy.
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Citation Information
Patent Citations
Detection of word-line leakage in memory arrays: current based approach
CN103069498A
Semiconductor device and method for testing the same
US20060236172A1