Light emitting device, method for manufacturing light emitting device, and projector

Abstract

The present application provides a light emitting device, a method for manufacturing a light emitting device, and a projector. The light emitting device of the present application has a substrate, a first light emitting portion, a second light emitting portion, a first electrode, a second electrode, a first protective layer, and a second protective layer. When viewed from the normal direction of the substrate, the area of the first electrode is larger than the area of the second electrode, the first protective layer has a first through hole, and the second protective layer has a second through hole. The first through hole includes a first hole and a second hole, the second through hole includes a third hole and a fourth hole, the first opening area of the first hole on the side farthest from the substrate is larger than the second opening area of the second hole on the side closest to the substrate, the third opening area of the third hole on the side farthest from the substrate is larger than the fourth opening area of the fourth hole on the side closest to the substrate, the outer edge of the second opening overlaps the first electrode when viewed from the top, the outer edge of the fourth opening overlaps the second electrode when viewed from the top, and the second opening area is larger than the fourth opening area.

Description

Technical Field

[0001] This invention relates to a light-emitting device, a method for manufacturing a light-emitting device, and a projector. Background Technology

[0002] Patent Document 1 disclosed a light-emitting device having a light-emitting portion composed of a plurality of nanopillars disposed on a substrate. In this light-emitting device, light-emitting portions emitting different colors of light are formed on the substrate.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2013-239718

[0004] In the above-described light-emitting device, it is considered that the size of the light-emitting area of ​​each light-emitting part of different colors of light is different. The size of the light-emitting area is determined by the diameter of the opening formed on the protective film covering the light-emitting part. Therefore, a large opening needs to be formed in the protective film for light-emitting parts with large light-emitting areas, and a small opening needs to be formed in the protective film for light-emitting parts with small light-emitting areas.

[0005] However, when etching openings of varying sizes onto a protective film, it is difficult to maintain a consistent etching rate. Therefore, if the etching time is matched to the fast-etching openings, the etching time for the other opening will be insufficient. Conversely, if the etching time is matched to the slow-etching openings, the etching time for the other opening will become excessively long, resulting in damage to the substrate layer due to etching. Summary of the Invention

[0006] To address the aforementioned issues, according to one aspect of the present invention, a light-emitting device is provided, comprising: a substrate; a first light-emitting portion disposed on the substrate; a second light-emitting portion disposed on the substrate; a first electrode disposed on the side of the first light-emitting portion opposite to the substrate; a second electrode disposed on the side of the second light-emitting portion opposite to the substrate; a first protective layer covering the first light-emitting portion and the first electrode; and a second protective layer covering the second light-emitting portion and the second electrode, wherein, when viewed from a top view along the normal direction of the substrate, the area of ​​the first electrode is larger than the area of ​​the second electrode, the first protective layer has a first through-hole, and the second protective layer has a second through-hole. A through hole includes a first hole and a second hole located on the substrate side of the first hole. A second through hole includes a third hole and a fourth hole located on the substrate side of the third hole. The area of ​​the first opening of the first hole closest to the side opposite to the substrate is larger than the area of ​​the second opening of the second hole closest to the substrate. The area of ​​the third opening of the third hole closest to the substrate is larger than the area of ​​the fourth opening of the fourth hole closest to the substrate. In the top view, the outer edge of the second opening overlaps with the first electrode, and the outer edge of the fourth opening overlaps with the second electrode. The area of ​​the second opening is larger than the area of ​​the fourth opening.

[0007] According to one aspect of the present invention, a method for manufacturing a light-emitting device is provided, comprising the following steps: forming a first light-emitting portion and a second light-emitting portion on a substrate; forming a first electrode on the side of the first light-emitting portion opposite to the substrate; forming a second electrode with an area smaller than the first electrode on the side of the second light-emitting portion opposite to the substrate; forming a first protective layer on the substrate such that it covers the first light-emitting portion and the first electrode; forming a second protective layer on the substrate such that it covers the second light-emitting portion and the second electrode; and forming a second protective layer from the substrate... When viewed from above in the normal direction, a first hole is formed at a first position overlapping the first electrode in the first protective layer and a second position overlapping the second electrode in the second protective layer; a second hole with an opening area smaller than the first hole is formed on the bottom surface of the first hole formed at the first position, thus forming a first through hole that exposes a portion of the first electrode; and a third hole with an opening area smaller than the second hole is formed on the bottom surface of the first hole formed at the second position, thus forming a second through hole that exposes a portion of the second electrode.

[0008] According to one aspect of the present invention, a projector having the light-emitting device described above is provided. Attached Figure Description

[0009] Figure 1 This is a schematic structural diagram of the projector according to the implementation method.

[0010] Figure 2 It is a top view showing the general structure of the light-emitting element.

[0011] Figure 3 This is a diagram showing the structure of the main parts of the light-emitting element.

[0012] Figure 4A This diagram shows the main parts of the manufacturing process of a light-emitting device.

[0013] Figure 4B This diagram shows the main parts of the manufacturing process of a light-emitting device.

[0014] Figure 4C This diagram shows the main parts of the manufacturing process of a light-emitting device.

[0015] Figure 4D This diagram shows the main parts of the manufacturing process of a light-emitting device.

[0016] Figure 4E This diagram shows the main parts of the manufacturing process of a light-emitting device.

[0017] Figure 5 This is a cross-sectional view showing the structure of a modified light-emitting element.

[0018] Label Explanation

[0019] 1: Projector; 10: Substrate; 12: Light-emitting device; 30, 130: Light-emitting part; 30B: Blue light-emitting part (first light-emitting part); 30R: Red light-emitting part (second light-emitting part); 31: Nanopillar (first columnar part); 33: Light-emitting layer (first light-emitting layer); 41: Nanopillar (second columnar part); 43: Light-emitting layer (second light-emitting layer); 51: First protective layer; 52: Second protective layer; 70B: Upper electrode (first electrode); 70R: Upper electrode (second electrode); 151: Contact hole (first through hole) ); 152: Contact hole (2nd through hole); 1511: Upper hole (1st hole); 1512: Lower hole (2nd hole); 1513: Bottom surface (bottom surface of 1st hole); 1521: Upper hole (1st hole, 3rd hole); 1522: Lower hole (3rd hole, 4th hole); 1523: Bottom surface (bottom surface of 2nd hole); P1: 1st position; P2: 2nd position; S1: 1st opening area; S2: 2nd opening area; S3: 3rd opening area; S4: 4th opening area; S5: 5th opening area; S6: 6th opening area. Detailed Implementation

[0020] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the following drawings, to facilitate observation of the structural elements, the scale of the dimensions is sometimes different depending on the structural elements. Figure 1 This is a schematic structural diagram of the projector according to this embodiment.

[0021] like Figure 1 As shown, the projector 1 in this embodiment is a projection-type image display device that projects images onto the screen SC. The projector 1 includes a light-emitting device 12, a light modulation device 5, and a projection optical device 4. The structure of the light-emitting device 12 will be described in detail later.

[0022] Hereinafter, the optical axis AX1 will be defined as the axis that coincides with the normal to the center of the light-emitting region 12R in the light-emitting device 12 and through which the principal ray of the light beam L emitted from the light-emitting region 12R passes.

[0023] The structure of each part is described below using an XYZ orthogonal coordinate system. The axis parallel to the long side of the rectangular luminous region 12R as viewed from the optical axis AX1 is defined as the X-axis, the axis parallel to the short side of the luminous region is defined as the Y-axis, and the axis perpendicular to the X-axis and Y-axis is defined as the Z-axis. The Z-axis is parallel to the optical axis AX1.

[0024] The light modulation device 5 modulates the light beam L emitted from the light-emitting device 12 according to image information to generate image light. The light modulation device 5 includes an incident-side polarizer 6, a liquid crystal display element 7, and an exit-side polarizer 8. Viewed from the Z-axis direction, the planar shape of the image forming region 7R of the liquid crystal display element 7 is rectangular. Furthermore, as described above, the planar shape of the light-emitting region 12R of the light-emitting device 12 is rectangular, and the planar shape of the image forming region 7R is approximately similar to that of the light-emitting region 12R. The area of ​​the light-emitting region 12R is the same as or slightly larger than the area of ​​the image forming region 7R.

[0025] The projection optical device 4 projects the image light emitted from the light modulation device 5 onto the projection surface, such as the screen SC. The projection optical device 4 consists of one or more projection lenses.

[0026] The light-emitting device 12 of this embodiment will be described below.

[0027] like Figure 1 As shown, the light-emitting device 12 has a light-emitting element 20 and a heat sink 21. The light-emitting element 20 has a first surface 20a and a second surface 20b, and a light beam L is emitted from the first surface 20a. The heat sink 21 is disposed on the second surface 20b of the light-emitting element 20 to release the heat generated by the light-emitting element 20. The heat sink 21 may also be omitted if necessary.

[0028] Figure 2This is a top view showing the schematic structure of the light-emitting element 20. Furthermore, in Figure 2 In order to facilitate observation of the accompanying drawings, only a portion of the light-emitting part 30 within the light-emitting region 12R of the light-emitting element 20 is shown, and the other light-emitting parts 30 are omitted.

[0029] like Figure 2 As shown, the light-emitting element 20 has a plurality of light-emitting portions 30 arranged in an array. In this embodiment, the light-emitting portions 30 are arranged in a matrix along the X-axis or Y-axis. The plurality of light-emitting portions 30 includes a red light-emitting portion 30R that emits red light, a green light-emitting portion 30G that emits green light, and a blue light-emitting portion 30B that emits blue light. The light-emitting device 12 of this embodiment can be configured as a self-emissive imager that forms an image by using each light-emitting portion 30 as a pixel.

[0030] In this embodiment, the white balance of the image is adjusted by making the light-emitting area of ​​the blue light-emitting unit 30B larger than that of the red light-emitting unit 30R. Furthermore, the light-emitting areas of the red light-emitting unit 30R and the green light-emitting unit 30G are set to the same size.

[0031] Figure 3 This is a diagram showing the structure of the main parts of the light-emitting element 20. Figure 3 This is a diagram of the portion of the plurality of light-emitting parts 30 that includes the blue light-emitting part 30B and the red light-emitting part 30R. Figure 3 The top view is a top view of the blue light-emitting unit 30B and the red light-emitting unit 30R viewed from the +Z side. Figure 3 The lower section is a cross-sectional view of the blue light-emitting part 30B and the red light-emitting part 30R.

[0032] like Figure 3 As shown, the light-emitting element 20 has a substrate 10, a semiconductor layer 11, a blue light-emitting part (first light-emitting part) 30B, a red light-emitting part (second light-emitting part) 30R, a first protective layer 51, a second protective layer 52, a lower electrode 60B, an upper electrode (first electrode) 70B, a lead-out electrode 71B, a lower electrode 60R, an upper electrode (second electrode) 70R, a lead-out electrode 71R, a first wiring 81, and a second wiring 82.

[0033] In this embodiment, in the Z-axis direction, the direction from which the nanopillars that are stacked from the substrate 10 to form the blue light-emitting part 30B and the red light-emitting part 30R (described later) are layered is designated as "up", and the direction from the substrate 10 toward the opposite side of the blue light-emitting part 30B and the red light-emitting part 30R is designated as "down".

[0034] The substrate 10 is, for example, a substrate mainly composed of a silicon (Si) substrate, a gallium nitride (GaN) substrate, or a sapphire substrate. A reflective layer is formed on the surface of the substrate 10, for example, a laminate formed by alternating layers of AlGaN and GaN layers, or a laminate formed by alternating layers of AlInN and GaN layers. The reflective layer reflects light generated by the light-emitting layers of the blue light-emitting portion 30B and the red light-emitting portion 30R (described later) towards the side opposite to the substrate 10.

[0035] A semiconductor layer 11 is disposed on the substrate 10. The semiconductor layer 11 is, for example, an n-type GaN layer, specifically a Si-doped GaN layer.

[0036] Figure 2 The plurality of light-emitting portions 30 shown are formed in an island shape on the substrate 10, separated by a semiconductor layer 11. Adjacent light-emitting portions 30 are electrically separated by a device separation layer (not shown) disposed around the semiconductor layer 11. The device separation layer is composed, for example, an i-type GaN layer, a silicon oxide layer, a silicon nitride layer, etc. The light-emitting portions 30 are formed in an island shape by an etching-based pattern. That is, the blue light-emitting portion 30B and the red light-emitting portion 30R are electrically separated.

[0037] The blue light-emitting part 30B has multiple nanopillars (first columnar parts) 31 and a light-propagating layer 36. The nanopillars 31 are columnar crystal structures protruding and extending on the semiconductor layer 11. The planar shape of the nanopillars 31 can be polygonal, circular, elliptical, etc. In this embodiment, as... Figure 2 As shown, the planar shape of the nanopillar 31 is circular. The diameter of the nanopillar 31 is on the order of nm, specifically, for example, 10 nm or more and 500 nm or less. The dimensions of the nanopillar 31 in the stacking direction, the so-called height of the nanopillar 31, are, for example, 0.1 μm or more and 5 μm or less.

[0038] Furthermore, when the planar shape of the nanopillar 31 is circular, the "diameter of the nanopillar 31" is the diameter of the circle; when the planar shape of the nanopillar 31 is not circular, the "diameter of the nanopillar 31" is the diameter of the smallest circle that contains the circle. For example, when the planar shape of the nanopillar 31 is polygonal, the diameter of the nanopillar 31 is the diameter of the smallest circle that contains the polygon; when the planar shape of the nanopillar 31 is elliptical, the diameter of the nanopillar 31 is the diameter of the smallest circle that contains the ellipse.

[0039] The "center of nanopillar 31" is the center of the circle when the planar shape of nanopillar 31 is circular, and the center of the smallest circle that contains the circle when the planar shape of nanopillar 31 is non-circular. For example, when the planar shape of nanopillar 31 is polygonal, the center of nanopillar 31 is the center of the smallest circle that contains the polygon; when the planar shape of nanopillar 31 is elliptical, the center of nanopillar 31 is the center of the smallest circle that contains the ellipse.

[0040] Multiple nanopillars 31 are arranged at a predetermined spacing in a predetermined direction when viewed from above. The nanopillars 31 can exhibit the effect of a photonic crystal, confining the light emitted by the light-emitting layer in the in-plane direction of the substrate 10 and emitting it in the stacking direction. The "stacking direction" refers to the direction along the normal direction of the surface of the substrate 10 on the side where the stacked structure is disposed. The "in-plane direction of the substrate 10" refers to the direction along the surface perpendicular to the stacking direction.

[0041] like Figure 3 As shown, the nanopillar 31 has a first semiconductor layer 32, a light-emitting layer (first light-emitting layer) 33, and a second semiconductor layer 34. The layers constituting the nanopillar 31 are formed by epitaxial growth as described later.

[0042] A first semiconductor layer 32 is disposed on the semiconductor layer 11. The first semiconductor layer 32 is disposed between the substrate 10 and the light-emitting layer 33. The first semiconductor layer 32 is, for example, composed of an n-type GaN layer doped with Si. In this embodiment, the first semiconductor layer 32 is made of the same material as the semiconductor layer 11.

[0043] A light-emitting layer 33 is disposed on the first semiconductor layer 32. The light-emitting layer 33 is disposed between the first semiconductor layer 32 and the second semiconductor layer 34. The light-emitting layer 33 has a quantum well structure, for example, composed of GaN layers and InGaN layers. The light-emitting layer 33 emits light by injecting current through the first semiconductor layer 32 and the second semiconductor layer 34. Furthermore, the number of GaN layers and InGaN layers constituting the light-emitting layer 33 is not particularly limited.

[0044] In this embodiment, the light-emitting layer 33 emits blue light in the blue wavelength band, for example, 430 nm to 470 nm.

[0045] A second semiconductor layer 34 is disposed on the light-emitting layer 33. The second semiconductor layer 34 is a layer with a different conductivity type than the first semiconductor layer 32. The second semiconductor layer 34 is, for example, composed of a p-type GaN layer doped with Mg. The first semiconductor layer 32 and the second semiconductor layer 34 function as a cladding layer that encloses light within the light-emitting layer 33.

[0046] A light-propagating layer 36 is disposed surrounding the nanopillars 31 when viewed from above. The refractive index of the light-propagating layer 36 is lower than that of the light-emitting layer 33. The light-propagating layer 36 is, for example, a GaN layer or a titanium oxide (TiO2) layer. The GaN layer used as the light-propagating layer 36 can be i-type, n-type, or p-type. The light-propagating layer 36 enables the light generated in the light-emitting layer 33 to propagate in a planar direction.

[0047] In the blue light-emitting unit 30B, a pin diode is formed by a stack of a p-type second semiconductor layer 34, an undoped light-emitting layer 33, and an n-type first semiconductor layer 32. The band gaps of the first semiconductor layer 32 and the second semiconductor layer 34 are larger than the band gap of the light-emitting layer 33. In the blue light-emitting unit 30B, if a forward bias voltage of the pin diode is applied between the lower electrode 60B and the upper electrode 70B and current is injected, recombination of electrons and holes occurs in the light-emitting layer 33. Light emission is generated through this recombination.

[0048] The light generated in the light-emitting layer 33 is propagated by the first semiconductor layer 32 and the second semiconductor layer 34 in the in-plane direction of the substrate 10 through the light propagation layer 36. At this time, the light forms a standing wave through the photonic crystal effect of the nanopillars 31 and is confined in the in-plane direction of the substrate 10. The confined light is amplified in the light-emitting layer 33 and undergoes laser oscillation. That is, the light generated in the light-emitting layer 33 resonates in the in-plane direction of the substrate 10 through the nanopillars 31, undergoing laser oscillation. Specifically, the light generated in the light-emitting layer 33 resonates in the in-plane direction of the substrate 10 in a resonant section composed of multiple nanopillars 31, undergoing laser oscillation. Subsequently, the +1st order diffracted light and -1st order diffracted light generated by the resonance travel as laser light in the stacking direction (Z-axis direction).

[0049] In the light-emitting element 20, the refractive index and thickness of the first semiconductor layer 32, the second semiconductor layer 34, and the light-emitting layer 33 are designed such that the intensity of light propagating in the in-plane direction is maximized in the light-emitting layer 33 along the Z-axis direction.

[0050] In this embodiment, the laser beam traveling in the stacking direction toward the substrate 10 is reflected by a reflective layer (not shown) formed on the surface of the substrate 10 and travels upward. Thus, the blue light-emitting part 30B can emit light from the top.

[0051] like Figure 3 As shown, an insulating layer 35 is disposed on the semiconductor layer 11. The insulating layer 35 is disposed between the light propagation layer 36 and the semiconductor layer 11. In the manufacturing process of the blue light-emitting part 30B, the insulating layer 35 functions as a mask for growing the film constituting the nanopillars 31. The insulating layer 35 is composed of, for example, a silicon oxide layer or a silicon nitride layer.

[0052] A first protective layer 51 is provided on the substrate 10 (semiconductor layer 11) to cover the blue light-emitting part 30B. The first protective layer 51 is, for example, a silicon oxide layer. The first protective layer 51 has the function of planarizing the upper surface of the substrate 10 and protecting the blue light-emitting part 30B from impacts, etc. A contact hole (first through hole) 151 is provided in the first protective layer 51 to expose the upper side of the blue light-emitting part 30B.

[0053] The lower electrode 60B is disposed on the semiconductor layer 11 to the side of the blue light-emitting part 30B. The lower electrode 60B is electrically connected to the first semiconductor layer 32 of the nanopillar 31 via the semiconductor layer 11. The lower electrode 60B is an electrode used to inject current into the light-emitting layer 33. As the lower electrode 60B, for example, a metal layer such as Ni, Ti, Cr, Pt or Au, or a stacked metal film formed by stacking them, is used.

[0054] An upper electrode 70B is disposed on the blue light-emitting part 30B. The upper electrode 70B is another electrode used to inject current into the light-emitting layer 33 of the nanopillar 31. The upper electrode 70B is disposed in contact with the nanopillar 31 and a portion of the light-propagating layer 36. Multiple upper electrodes 70B are provided depending on the number of blue light-emitting parts 30B. A portion of the upper electrode 70B is exposed within the contact hole 151 disposed in the first protective layer 51.

[0055] The upper electrode 70B is made of metal layers such as Ni, Ti, Cr, Pt, or Au, or a laminated metal film formed by stacking these materials. The upper electrode 70B is used to improve the conductivity between the lead-out electrode 71B and the blue light-emitting part 30B. Furthermore, the upper electrode 70B is a thin film of about tens of nanometers, and therefore has light transmittance.

[0056] Lead-out electrode 71B is connected to upper electrode 70B exposed in contact hole 151. Lead-out electrode 71B is led out to the first protective layer 51 through contact hole 151.

[0057] The lead-out electrode 71B is, for example, a light-transmitting conductive layer composed of an ITO (Indium Tin Oxide) layer and an IZO (Indium Zinc Oxide) layer. The light generated in the light-emitting layer 33 passes through the upper electrode 70B and the lead-out electrode 71B and is emitted upward.

[0058] The first wiring 81 is stacked on the lead electrode 71B. The first wiring 81 is electrically connected to the second semiconductor layer 34 of the nanopillars 31 in the blue light-emitting part 30B via the lead electrode 71B and the upper electrode 70B. The first wiring 81 may be, for example, a metal layer such as Ni, Ti, Cr, Pt or Au, or a stacked metal film formed by stacking them.

[0059] The first wiring 81 is connected, for example, via a wire to a drive circuit located in an area (not shown) on the substrate 10. The lower electrode 60B described above is also connected, for example, via a wire to a drive circuit located in an area (not shown) on the substrate 10. Based on this structure, the light-emitting device 12 can inject current into the light-emitting layer 33 via the lower electrode 60B and the upper electrode 70B by driving the drive circuit, thereby enabling the blue light-emitting portion 30B to emit light.

[0060] On the other hand, the red light-emitting part 30R has multiple nanopillars (second pillar-shaped parts) 41 and a light-propagating layer 46. The red light-emitting part 30R has the same structure as the blue light-emitting part 30B, except that the color of the emitted light is different. Therefore, the description of the structure that is the same as the blue light-emitting part 30B will be omitted below.

[0061] like Figure 3 As shown, the nanopillar 41 contains a light-emitting layer (second light-emitting layer) 43 that emits red light.

[0062] A second protective layer 52 is disposed on the substrate 10 (semiconductor layer 11) covering the red light-emitting part 30R. The second protective layer 52 is formed of the same material as the first protective layer 51. The second protective layer 52 has the function of planarizing the upper surface of the substrate 10 and protecting the red light-emitting part 30R from impacts, etc. A contact hole (second through hole) 152 is provided in the second protective layer 52 to expose the upper side of the red light-emitting part 30R.

[0063] A lower electrode 60R is disposed on the semiconductor layer 11 to the side of the red light-emitting portion 30R. The lower electrode 60R is an electrode for injecting current into the light-emitting layer 43 of the nanopillar 41. An upper electrode 70R is disposed on the red light-emitting portion 30R. The upper electrode 70R is another electrode for injecting current into the light-emitting layer 43 of the nanopillar 41. The upper electrode 70R is disposed in contact with the nanopillar 41 and a portion of the light-propagating layer 46. Multiple upper electrodes 70R are provided depending on the number of red light-emitting portions 30R. A portion of the upper electrode 70R is exposed within a contact hole 152 provided in the second protective layer 52.

[0064] The lead-out electrode 71R is connected to the upper electrode 70R exposed in the contact hole 152. The lead-out electrode 71R is led out to the second protective layer 52 through the contact hole 152.

[0065] The second wiring 82 is stacked on the lead electrode 71R. The second wiring 82 is electrically connected to the nanopillar 41 of the red light-emitting part 30R via the lead electrode 71R and the upper electrode 70R.

[0066] The second wiring 82 is connected, for example, via a wire to a drive circuit located in an area (not shown) on the substrate 10. The aforementioned lower electrode 60R is also connected, for example, via a wire to a drive circuit located in an area (not shown) on the substrate 10. Based on this structure, the light-emitting element 20, by driving the drive circuit, injects current into the light-emitting layer 43 via the lower electrode 60R and the upper electrode 70R, enabling the red light-emitting portion 30R to emit light.

[0067] As described above, in the light-emitting device 12 of this embodiment, the light-emitting area of ​​the blue light-emitting portion 30B in the light-emitting element 20 is set to be larger than the light-emitting area of ​​the red light-emitting portion 30R. Here, the size of the light-emitting area is determined by the contact area between the nanopillar and the electrode, that is, the size of the electrode formed on the nanopillar. That is, in the case of this embodiment, the area of ​​the upper electrode 70B formed on the nanopillar 31 of the blue light-emitting portion 30B is larger than the area of ​​the upper electrode 70R formed on the nanopillar 41 of the red light-emitting portion 30R. Therefore, the opening diameter of the contact hole 151 exposing the upper electrode 70B is larger than the opening diameter of the contact hole 152 exposing the upper electrode 70R.

[0068] like Figure 3 As shown, the contact hole 151 includes an upper hole (first hole) 1511 and a lower hole (second hole) 1512. The lower hole 1512 is located on the substrate 10 side (lower side) of the upper hole 1511, and the upper hole 1511 is located on the upper side (opposite side of the substrate 10) of the lower hole 1512.

[0069] In this embodiment, the contact hole 151 is formed by an etching process as described later. The upper hole 1511 and the lower hole 1512 of the contact hole 151 are formed by a two-stage etching process. The etching conditions for forming the upper hole 1511 in the first protective layer 51 are different from the etching conditions for forming the lower hole 1512 in the first protective layer 51. Furthermore, the etching process for the contact hole 151 will be described later.

[0070] In this embodiment, the upper hole 1511 has a tapered shape in which the inner diameter narrows toward the lower side. Therefore, in the upper hole 1511, the area S1 of the first opening 1511a, which is the upper opening end closest to the side opposite to the base 10 (upper side), is the largest, and the area S5 of the fifth opening 1511b, which is the lower opening end closest to the base 10, is the smallest.

[0071] The lower hole 1512 is formed on a portion of the bottom surface 1513 of the upper hole 1511. The lower hole 1512 exposes a portion of the upper electrode 70B. The bottom surface 1513 of the upper hole 1511 is a flat surface. The upper hole 1511 is formed by an etching process as described later; therefore, the flatness of the bottom surface 1513 does not refer to a flat surface without any irregularities, such as a mirror surface, but rather to a surface that includes the minor irregularities that may typically be produced during the etching process.

[0072] In this embodiment, the lower hole 1512 has a tapered shape in which the inner diameter narrows downwards. Therefore, in the lower hole 1512, the upper opening end, which is closest to the side opposite to the base 10 (the upper side), has the largest opening area, while the lower opening end, which is closest to the base 10, has the smallest second opening area S2, i.e., the second opening 1512a. Furthermore, the opening area of ​​the upper opening end in the lower hole 1512 is smaller than the fifth opening area S5 of the upper hole 1511.

[0073] In this embodiment, the first opening area S1 of the upper hole 1511 is greater than the second opening area S2 of the lower hole 1512.

[0074] In this embodiment, the thickness of the first protective layer 51 covering the upper electrode 70B is set to, for example, 600 nm to 1000 nm.

[0075] The upper hole 1511 is formed such that the film thickness of the portion covering the upper electrode 70B (bottom surface 1513) is approximately 1 / 4 to 1 / 6 of the film thickness of the first protective layer 51. Considering current leakage, the film thickness of the portion covering the upper electrode 70B is preferably ensured to be 150 nm or more.

[0076] For example, if the thickness of the first protective layer 51 covering the upper electrode 70B is set to 600 nm, then to cover the upper electrode 70B with a film thickness of 150 nm, the depth of the upper hole 1511 only needs to be set to 450 nm. Alternatively, if the thickness of the first protective layer 51 covering the upper electrode 70B is set to 1000 nm, then to cover the upper electrode 70B with a film thickness of 150 nm, the depth of the upper hole 1511 only needs to be set to 850 nm.

[0077] like Figure 3 As shown, the contact hole 152 includes an upper hole (third hole) 1521 and a lower hole (fourth hole) 1522. The lower hole 1522 is located on the base 10 side (lower side) of the upper hole 1521, and the upper hole 1521 is located on the upper side of the lower hole 1522.

[0078] In this embodiment, the contact hole 152 is formed by an etching process as described later. The upper hole 1521 and the lower hole 1522 of the contact hole 152 are formed by a two-stage etching process. That is, the etching conditions for forming the upper hole 1521 in the second protective layer 52 are different from the etching conditions for forming the lower hole 1522 in the second protective layer 52. The upper hole 1521 is formed by the same etching process as the upper hole 1511 of the contact hole 151. The lower hole 1522 is formed by the same etching process as the lower hole 1512 of the contact hole 151. Furthermore, the etching process for the contact hole 152 will be described later.

[0079] In this embodiment, the upper hole 1521 has a tapered shape in which the inner diameter narrows toward the lower side. Therefore, in the upper hole 1521, the area S3 of the third opening 1521a, which is the upper opening end closest to the side opposite to the base 10, is the largest, and the area S6 of the sixth opening 1521b, which is the lower opening end closest to the base 10, is the smallest.

[0080] The lower hole 1522 is formed on a portion of the bottom surface 1523 of the upper hole 1521. The lower hole 1522 exposes a portion of the upper electrode 70R. The bottom surface 1523 of the upper hole 1521 is a flat surface. The flatness of the bottom surface 1523 means that it includes the fine unevenness that may typically occur during the etching process.

[0081] In this embodiment, the lower hole 1522 has a tapered shape in which the inner diameter narrows downwards. Therefore, in the lower hole 1522, the upper opening end, which is closest to the side opposite to the base 10 (the upper side), has the largest opening area, while the lower opening end, which is closest to the base 10, has the smallest opening area S4, which is the fourth opening 1522a. Furthermore, the opening area of ​​the upper opening end in the lower hole 1522 is smaller than the sixth opening area S6 of the upper hole 1521.

[0082] In this embodiment, the third opening area S3 of the upper hole 1521 is greater than the fourth opening area S4 of the lower hole 1522.

[0083] In this embodiment, the first opening area S1 of the upper hole 1511 in the contact hole 151 is equal to the third opening area S3 of the upper hole 1521 in the contact hole 152. In addition, the fifth opening area S5 of the upper hole 1511 in the contact hole 151 is equal to the sixth opening area S6 of the upper hole 1521 in the contact hole 152.

[0084] Thus, in this embodiment, the upper hole 1511 of contact hole 151 and the upper hole 1521 of contact hole 152 have the same opening shape. The upper holes 1511 and 1521 are holes etched at the same etching rate.

[0085] On the other hand, in this embodiment, the lower hole 1512 of contact hole 151 and the lower hole 1522 of contact hole 152 have different opening shapes. The lower hole 1512 and the lower hole 1522 are holes etched at different etching rates.

[0086] In this embodiment, the second opening area S2 of the lower hole 1512 in the contact hole 151 is larger than the fourth opening area S4 of the lower hole 1522 in the contact hole 152. Therefore, the contact hole 151 allows the upper electrode 70B, which has an area larger than the upper electrode 70R, to be exposed.

[0087] Here, the ratio of the first opening area S1 of the upper hole 1511 in the contact hole 151 to the third opening area S3 of the upper hole 1521 in the contact hole 152 is set as the first area ratio. In addition, the ratio of the second opening area S2 of the lower hole 1512 in the contact hole 151 to the fourth opening area S4 of the lower hole 1522 in the contact hole 152 is set as the second area ratio.

[0088] As described above, the upper holes 1511 and 1521 have the same opening shape, so the first area ratio is approximately 1. Furthermore, as described above, the second opening area S2 is larger than the fourth opening area S4, so the second area ratio is greater than 1. For example, if the second opening area S2 is set to twice the fourth opening area S4, then the second area ratio is 2.

[0089] Thus, in the light-emitting device 12 of this embodiment, the ratio of the first opening area S1 to the third opening area S3, i.e., the first area ratio, is less than the ratio of the second opening area S2 to the fourth opening area S4, i.e., the second area ratio.

[0090] When viewed from above in the direction normal to the substrate constituting the substrate 10, the contact hole 151 is formed at a position that exposes a portion of the upper electrode 70B. That is, the contact hole 151 is formed such that, when viewed from above in the direction normal to the substrate 10, the outer edge 512 of the second opening 1512a of the lower hole 1512 of the contact hole 151 overlaps with the upper electrode 70B. At least a portion of the outer edge 512 of the second opening 1512a overlaps with the upper electrode 70B.

[0091] When viewed from the normal direction of the substrate constituting the substrate 10, the contact hole 152 is formed at a position that exposes a portion of the upper electrode 70R. That is, when viewed from the normal direction of the substrate 10, the contact hole 152 is formed such that the outer edge 522 of the fourth opening 1522a of the lower hole 1522 of the contact hole 152 overlaps with the upper electrode 70R. At least a portion of the outer edge 522 of the fourth opening 1522a overlaps with the upper electrode 70R.

[0092] Next, the manufacturing method of the light-emitting device 12 of this embodiment will be described.

[0093] Figures 4A-4E This diagram shows the main parts of the manufacturing process of the light-emitting device 12. The manufacturing processes of the blue light-emitting part 30B and the red light-emitting part 30R will be described below.

[0094] First, such as Figure 4A As shown, a process is performed in which the light-emitting part 30, which includes a blue light-emitting part 30B and a red light-emitting part 30R, is formed into an island shape on the substrate 10.

[0095] In the formation process of the light-emitting part 30, firstly, a semiconductor layer 11 is epitaxially grown in a predetermined area on the substrate 10. Examples of epitaxial growth methods include MOCVD (Metal Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy).

[0096] First, a plurality of nanopillars 31 are formed on the semiconductor layer 11, and a light propagation layer 36 is formed around the nanopillars 31.

[0097] Specifically, when forming the nanopillars 31, an insulating layer 35 is formed on the semiconductor layer 11. The insulating layer 35 is formed, for example, by film deposition based on CVD (Chemical Vapor Deposition) or sputtering, and by patterning based on photolithography and etching (hereinafter also simply referred to as "patterning"). Using the insulating layer 35 with openings as a mask, a first semiconductor layer 32, a light-emitting layer 33, and a second semiconductor layer 34 are sequentially epitaxially grown on the semiconductor layer 11 by, for example, MOCVD or MBE, thereby forming the nanopillars 31.

[0098] After forming the nanopillars 31, a light-propagating layer 36 is formed around the nanopillars 31. The light-propagating layer 36 is formed, for example, by an ELO (Epitaxial Lateral Overgrowth) method based on MOCVD, MBE, etc.

[0099] Then, for example, an unwanted nanopillars 31 and light propagation layer 36 formed outside the formation region of the blue light-emitting portion 30B are removed by using a dry etching process with a Cl-based etching gas. Thus, the blue light-emitting portion 30B is formed on the semiconductor layer 11.

[0100] Then, an upper electrode 70B is formed on the blue light-emitting part 30B. The upper electrode 70B is formed, for example, by film formation and patterning based on sputtering or vacuum evaporation.

[0101] Furthermore, in the case of forming the red light-emitting portion 30R, similarly to the blue light-emitting portion 30B, a plurality of nanopillars 41 are formed on the semiconductor layer 11, and a light-propagating layer 46 is formed around the nanopillars 41. Then, unwanted nanopillars 41 and the light-propagating layer 46 formed outside the formation area of ​​the red light-emitting portion 30R are removed by a dry etching process, and the red light-emitting portion 30R is formed on the semiconductor layer 11. Next, an upper electrode 70R is formed on the red light-emitting portion 30R. In this embodiment, the area of ​​the upper electrode 70R is smaller than the area of ​​the upper electrode 70B.

[0102] Next, as Figure 4B As shown, a first protective layer 51 is formed on the substrate 10 to cover the blue light-emitting portion 30B and the upper electrode 70B. A second protective layer 52 is formed on the substrate 10 to cover the red light-emitting portion 30R and the upper electrode 70R. The first protective layer 51 and the second protective layer 52 are formed, for example, by spin coating. Therefore, the first protective layer 51 and the second protective layer 52 are made of the same material.

[0103] Next, contact holes 151 and 152 are formed in the first protective layer 51 and the second protective layer 52, respectively. In addition, although the illustration is omitted, the first protective layer 51 and the second protective layer 52 are pre-patterned into a predetermined shape before the contact holes 151 and 152 are formed.

[0104] Specifically, such as Figure 4C As shown, an upper hole 1511, serving as a first hole, is formed at a first position P1 in the first protective layer 51 that overlaps with the upper electrode 70B. In this embodiment, when the upper hole 1511 is formed in the first protective layer 51, an upper hole (first hole) 1521 is simultaneously formed at a second position P2 in the second protective layer 52 that overlaps with the upper electrode 70R. The upper hole 1511 and the upper hole 1521 have the same opening shape and are therefore formed under the same etching conditions.

[0105] Next, as Figure 4D As shown, a lower hole 1512, which is a second hole with a smaller opening area than the upper hole 1511, is formed on the bottom surface 1513 of the upper hole 1511 at the first position P1, thus forming a contact hole 151 that exposes a portion of the upper electrode 70B. Additionally, a lower hole 1522, which is a third hole with a smaller opening area than the lower hole 1512, is formed on the bottom surface 1523 of the upper hole 1521 at the second position P2, thus forming a contact hole 152 that exposes a portion of the upper electrode 70R.

[0106] It is generally difficult to achieve consistent etching rates for holes with different opening areas. For example, the etching process for holes with larger opening areas involves more etching gas, resulting in a shorter etching time compared to the etching process for holes with smaller opening areas. Therefore, when etching both large-diameter and small-diameter holes simultaneously, if the etching time is matched to the relatively easier large-diameter holes, the etching time for the relatively difficult small-diameter holes will be too short. This can lead to insufficient etching of the small-diameter holes, resulting in poor conductivity due to etching residue.

[0107] On the other hand, if the etching time is matched to the small-diameter holes that are relatively difficult to etch, the etching time in the large-diameter holes becomes longer. The electrodes exposed due to the large diameter are exposed to plasma for a long time, resulting in the problem of characteristic degradation due to etching damage.

[0108] In contrast, in this embodiment, by pre-forming upper holes 1511 and 1521 on the first protective layer 51 and the second protective layer 52, the film thickness of the first protective layer 51 covering the upper electrode 70B and the film thickness of the second protective layer 52 covering the upper electrode 70R are reduced. Therefore, compared to the case where the lower holes 1512 and 1522 are formed directly on the first protective layer 51 and the second protective layer 52 without forming the upper holes 1511 and 1512, the etch film thickness when forming the lower holes 1512 and 1522 can be reduced by the amount of depth of the upper holes 1511 and 1521. Therefore, even when contact holes 151 and 152 with different opening diameters are formed on the first protective layer 51 and the second protective layer 52, problems such as etching residue caused by different etching rates or performance degradation caused by etching damage can be suppressed.

[0109] Next, as Figure 4E As shown, a lead-out electrode 71B is formed on the upper electrode 70B exposed within the contact hole 151, and a lead-out electrode 71R is formed on the upper electrode 70R exposed within the contact hole 152. The lead-out electrodes 71B and 71R are formed, for example, by film deposition and patterning based on sputtering or vacuum evaporation. Next, a first wiring 81 and a second wiring 82 are formed on the lead-out electrodes 71B and 71R, respectively. The first wiring 81 and the second wiring 82 are formed, for example, by film deposition and patterning based on sputtering or vacuum evaporation.

[0110] Then, lower electrodes 60B and 60R (see reference) are formed in an area (not shown) different from the area where the light-emitting part 30 is formed. Figure 3 The lower electrodes 60B and 60R are formed, for example, by film formation and patterning based on sputtering or vacuum evaporation. In addition, there is no particular limitation on the order of the processes for forming the lower electrodes 60B and 60R, and the processes for forming the lead electrodes 71B and 71R, the first wiring 81 and the second wiring 82.

[0111] Finally, for example, a drive circuit is mounted on the substrate 10 using a bonding member (not shown), and the drive circuit, the lower electrodes 60B and 60R of each light-emitting part 30, and the first wiring 81 and the second wiring 82 are electrically connected by wires or the like. Then, a heat sink 21 is mounted on the lower surface (the surface on the -Z side) of the substrate 10 to manufacture the light-emitting device 12 of this embodiment.

[0112] (Effects of this implementation method)

[0113] As described above, the light-emitting device 12 of this embodiment includes: a substrate 10; a blue light-emitting portion 30B disposed on the substrate 10; a red light-emitting portion 30R disposed on the substrate 10; an upper electrode 70B disposed on the side of the blue light-emitting portion 30B opposite to the substrate 10; an upper electrode 70R disposed on the side of the red light-emitting portion 30R opposite to the substrate 10; a first protective layer 51 covering the blue light-emitting portion 30B and the upper electrode 70B; and a second protective layer 52 covering the red light-emitting portion 30R and the upper electrode 70R. The area of ​​the upper electrode 70B is larger than the area of ​​the upper electrode 70R. The first protective layer 51 has a contact hole 151 that exposes a portion of the upper electrode 70B. The second protective layer 52 has a contact hole 152 that exposes a portion of the upper electrode 70R. The contact hole 151 includes an upper hole 1511 and a lower hole 1512 located on the substrate 10 side of the upper hole 1511. The contact hole 152 includes an upper hole 1521 and a lower hole 1522 located on the substrate 10 side of the upper hole 1521. The first opening area S1 of the upper hole 1511 on the side closest to the substrate 10 is larger than the second opening area S2 of the lower hole 1512 on the substrate side 10. The third opening area S3 of the upper hole 1521 on the side closest to the substrate 10 is larger than the fourth opening area S4 of the lower hole 1522 on the substrate side 10. The second opening area S2 is larger than the fourth opening area S4.

[0114] In the light-emitting device 12 of this embodiment, a portion of the upper electrode 70B is exposed through a contact hole 151 including an upper hole 1511 and a lower hole 1512, and a portion of the upper electrode 70R is exposed through a contact hole 152 including an upper hole 1521 and a lower hole 1522. Therefore, by forming upper holes 1511 and 1521 in the first protective layer 51 and the second protective layer 52, the film thickness of the first protective layer 51 covering the upper electrode 70B and the film thickness of the second protective layer 52 covering the upper electrode 70R are reduced. As a result, compared with the structure in which the lower holes 1512 and 1522 are directly formed in the first protective layer 51 and the second protective layer 52, the etching film thickness when forming lower holes 1512 and 1522 with different apertures can be suppressed.

[0115] Therefore, when contact holes 151 and 152 with different opening diameters are formed in the first protective layer 51 and the second protective layer 52, it is possible to suppress the degradation of characteristics caused by etching residue or etching damage due to the difference in etching rate. Therefore, the light-emitting device 12 of this embodiment becomes a highly reliable light-emitting device that reduces adverse conditions caused by the difference in etching rate.

[0116] In the light-emitting device 12 of this embodiment, the first area ratio, which is the ratio of the first opening area S1 to the third opening area S3, is less than the second area ratio, which is the ratio of the second opening area S2 to the fourth opening area S4.

[0117] According to this structure, the opening shapes of the upper holes 1511 and 1521 can be made similar between each other between the contact holes 151 and 152. As a result, the etching process of the upper holes 1511 and 1521 can be performed in the same process, thus making manufacturing easier.

[0118] In the light-emitting device 12 of this embodiment, the area of ​​the first opening S1 is equal to the area of ​​the third opening S3, and the area of ​​the fifth opening S5 closest to the substrate 10 in the upper hole 1511 is equal to the area of ​​the sixth opening S6 closest to the substrate 10 in the upper hole 1521.

[0119] According to this structure, since the upper holes 1511 and 1521 have the same opening shape, the process of forming the contact hole becomes easier.

[0120] In the light-emitting device 12 of this embodiment, the lower hole 1512 is formed on a part of the bottom surface 1513 of the upper hole 1511, and the lower hole 1522 is formed on a part of the bottom surface 1523 of the upper hole 1521.

[0121] According to this structure, after the upper holes 1511 and 1521 are formed in the first etching process, the lower holes 1512 and 1522 can be formed in the second etching process. Thus, the contact holes 151 and 152 can be formed in two etching processes, which can reduce defects caused by the difference in etching rate.

[0122] In the light-emitting device 12 of this embodiment, the bottom surface 1513 of the upper hole 1511 and the bottom surface 1523 of the upper hole 1521 are both flat surfaces.

[0123] Based on this structure, the depth of the upper holes 1511 and 1521 can be easily controlled, thus making the manufacture of the upper holes 1511 and 1521 easier.

[0124] In the light-emitting device 12 of this embodiment, the blue light-emitting part 30B has a plurality of nanopillars 31 including a light-emitting layer 33, and the red light-emitting part 30R has a plurality of nanopillars 41 including a light-emitting layer 43.

[0125] In this case, as the blue light-emitting part 30B and the red light-emitting part 30R, a light-emitting device 12 with a structure comprising a plurality of nanopillars 31, 41 can be provided.

[0126] The manufacturing method of the light-emitting device 12 in this embodiment includes the following steps: forming a blue light-emitting portion 30B and a red light-emitting portion 30R on a substrate 10; forming an upper electrode 70B on the side of the blue light-emitting portion 30B opposite to the substrate 10; forming an upper electrode 70R with an area smaller than that of the upper electrode 70B on the side of the red light-emitting portion 30R opposite to the substrate 10; forming a first protective layer 51 on the substrate 10 to cover the blue light-emitting portion 30B and the upper electrode 70B; forming a second protective layer 52 on the substrate 10 to cover the red light-emitting portion 30R and the upper electrode 70R; and forming the first protective layer 51... Upper holes 1511 and 1521 are formed at the first position P1 overlapping with the upper electrode 70B and the second position P2 overlapping with the upper electrode 70R in the second protective layer 52, respectively. A lower hole 1512 with an opening area smaller than the upper hole 1511 is formed on the bottom surface 1513 of the upper hole 1511 formed at the first position P1, thereby forming a contact hole 151 that exposes a part of the upper electrode 70B. A lower hole 1522 with an opening area smaller than the lower hole 1512 is formed on the bottom surface 1523 of the upper hole 1521 formed at the second position P2, thereby forming a contact hole 152 that exposes a part of the upper electrode 70R.

[0127] According to the manufacturing method of the light-emitting device 12 of this embodiment, by pre-forming upper holes 1511 and 1521 in the first protective layer 51 and the second protective layer 52, the film thickness of the first protective layer 51 covering the upper electrode 70B and the film thickness of the second protective layer 52 covering the upper electrode 70R can be reduced. Therefore, the thickness of the protective film etched when forming lower holes 1512 and 1522 with different apertures can be reduced by the amount of depth of the upper holes 1511 and 1521.

[0128] Therefore, while reducing adverse effects such as etching residue caused by different etching rates or performance degradation caused by etching damage, contact holes 151 and 152 with different opening diameters can be formed in the first protective layer 51 and the second protective layer 52. Thus, a light-emitting device 12 with excellent reliability can be provided.

[0129] The projector 1 in this embodiment has a light-emitting device 12.

[0130] According to this embodiment, a projector 1, which has a light-emitting device 12 that suppresses defects caused by the etching process, can provide a projector with excellent reliability and displays bright and high-quality images.

[0131] Furthermore, the scope of the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention.

[0132] For example, in the above embodiments, the case in which the light-emitting part 30 is composed of multiple nanopillars is given, but the present invention is not limited thereto.

[0133] Figure 5 This is a cross-sectional view showing the structure of the light-emitting element 120 in a modified example. For example... Figure 5 As shown, in the light-emitting element 120 of this modified example, the light-emitting portion 130 has a structure in which a film-like crystal structure is stacked. The light-emitting portion 130 has a structure formed by stacking a film-like first semiconductor layer 132, a film-like light-emitting layer 133, and a film-like second semiconductor layer 134. In the modified example, a non-transparent material is used as the protective layer covering the light-emitting portion 130.

[0134] Furthermore, while the above embodiment described a light-emitting layer made of InGaN-based material, various semiconductor materials can be used as the light-emitting layer depending on the wavelength of the light to be emitted. For example, AlGaN-based, AlGaAs-based, InGaAs-based, InGaAsP-based, InP-based, GaP-based, and AlGaP-based semiconductor materials can be used. Additionally, the diameter or spacing of the photonic crystal structure can be appropriately varied depending on the wavelength of the light to be emitted.

[0135] Furthermore, the specific descriptions of the shape, quantity, configuration, materials, etc. of the various structural elements of the light-emitting device and the projector are not limited to the above-described embodiments and can be appropriately modified.

[0136] In the above embodiments, an example of mounting the light-emitting device of the present invention on a projector has been shown, but the invention is not limited thereto. For example, the light-emitting device of the present invention can be applied to the display devices of micro LED displays, head-mounted displays, or smartwatches. Furthermore, the light-emitting device of the present invention can also be applied to lighting fixtures, automotive headlights, etc.

[0137] The light-emitting device according to the present invention may also have the following structure.

[0138] One aspect of the present invention provides a light-emitting device comprising: a substrate; a first light-emitting portion disposed on the substrate; a second light-emitting portion disposed on the substrate; a first electrode disposed on the side of the first light-emitting portion opposite to the substrate; a second electrode disposed on the side of the second light-emitting portion opposite to the substrate; a first protective layer covering the first light-emitting portion and the first electrode; and a second protective layer covering the second light-emitting portion and the second electrode. When viewed from above in a plan view taken from the normal direction of the substrate, the area of ​​the first electrode is larger than the area of ​​the second electrode. The first protective layer has a first through-hole, and the second protective layer has a second through-hole. The first through-hole includes... The first hole and the second hole located on the substrate side of the first hole, the second through hole includes the third hole and the fourth hole located on the substrate side of the third hole, the first opening area of ​​the first opening on the side closest to the substrate in the first hole is larger than the second opening area of ​​the second opening on the substrate side in the second hole, the third opening area of ​​the third opening on the side closest to the substrate in the third hole is larger than the fourth opening area of ​​the fourth opening on the substrate side in the fourth hole, when viewed from above, the outer edge of the second opening overlaps with the first electrode, the outer edge of the fourth opening overlaps with the second electrode, and the area of ​​the second opening is larger than the area of ​​the fourth opening.

[0139] In one embodiment of the light-emitting device of the present invention, the following structure may also be provided: the first area ratio, which is the ratio of the first opening area to the third opening area, is less than the second area ratio, which is the ratio of the second opening area to the fourth opening area.

[0140] In one embodiment of the light-emitting device of the present invention, the following structure may also be provided: the area of ​​the first opening is equal to the area of ​​the third opening, and the area of ​​the fifth opening in the first hole located on the side closest to the substrate is equal to the area of ​​the sixth opening in the third hole located on the side closest to the substrate.

[0141] In one embodiment of the light-emitting device of the present invention, the following structure may also be provided: a second hole is formed on a portion of the bottom surface of the first hole, and a fourth hole is formed on a portion of the bottom surface of the third hole.

[0142] In one embodiment of the light-emitting device of the present invention, the following structure may also be provided: the bottom surface of the first hole and the bottom surface of the third hole are both flat surfaces.

[0143] In one embodiment of the light-emitting device of the present invention, the following structure may also be provided: the first light-emitting part has a plurality of first columnar parts including a first light-emitting layer, and the second light-emitting part has a plurality of second columnar parts including a second light-emitting layer.

[0144] The manufacturing method of the light-emitting device according to the present invention can also have the following structure.

[0145] A method for manufacturing a light-emitting device according to one aspect of the present invention includes the following steps: forming a first light-emitting portion and a second light-emitting portion on a substrate; forming a first electrode on the side of the first light-emitting portion opposite to the substrate; forming a second electrode with an area smaller than the first electrode on the side of the second light-emitting portion opposite to the substrate; forming a first protective layer on the substrate such that it covers the first light-emitting portion and the first electrode; forming a second protective layer on the substrate such that it covers the second light-emitting portion and the second electrode; forming a first hole at a first position overlapping the first electrode in the first protective layer and a second position overlapping the second electrode in the second protective layer when viewed from the normal direction of the substrate; forming a second hole with an opening area smaller than the first hole on the bottom surface of the first hole formed at the first position to form a first through hole that exposes a portion of the first electrode; and forming a third hole with an opening area smaller than the second hole on the bottom surface of the first hole formed at the second position to form a second through hole that exposes a portion of the second electrode.

[0146] In one aspect of the manufacturing method of the light-emitting device of the present invention, the manufacturing method may also be configured as follows: as a first light-emitting part, a plurality of first columnar parts including a first light-emitting layer are formed, and as a second light-emitting part, a plurality of second columnar parts including a second light-emitting layer are formed.

[0147] The projector of one embodiment of the present invention may also have the following structure.

[0148] One aspect of the present invention provides a projector having a light-emitting device according to the above-described aspect of the present invention.

Claims

1. A light emitting device, comprising: The light emitting device has: a substrate; a first light emitting portion provided on the substrate; a second light emitting portion provided on the substrate; a first electrode provided on a side of the first light emitting portion opposite to the substrate; a second electrode provided on a side of the second light emitting portion opposite to the substrate; a first protective layer covering the first light emitting portion and the first electrode; and a second protective layer covering the second light emitting portion and the second electrode, an area of the first electrode is larger than an area of the second electrode when viewed from a normal direction of the substrate, the first protective layer has a first through-hole, the second protective layer has a second through-hole, the first through-hole includes a first hole and a second hole located on a side of the first hole closer to the substrate, the second through-hole includes a third hole and a fourth hole located on a side of the third hole closer to the substrate, a first opening area of a first opening in the first hole closer to the side opposite to the substrate is larger than a second opening area of a second opening in the second hole closer to the substrate side, a third opening area of a third opening in the third hole closer to the side opposite to the substrate is larger than a fourth opening area of a fourth opening in the fourth hole closer to the substrate side, an outer edge of the second opening overlaps with the first electrode and an outer edge of the fourth opening overlaps with the second electrode when viewed from the normal direction of the substrate, the second opening area is larger than the fourth opening area, a first area ratio as a ratio of the first opening area to the third opening area is smaller than a second area ratio as a ratio of the second opening area to the fourth opening area.

2. The light emitting device according to claim 1, wherein the first opening area is equal to the third opening area, a fifth opening area of a fifth opening in the first hole closer to the substrate side is equal to a sixth opening area of a sixth opening in the third hole closer to the substrate side.

3. The light emitting device according to claim 1 or 2, wherein the second hole is formed in a portion of a bottom surface of the first hole, the fourth hole is formed in a portion of a bottom surface of the third hole.

4. The light emitting device according to claim 3, wherein the bottom surface of the first hole and the bottom surface of the third hole are flat surfaces, respectively.

5. The light emitting device according to claim 1 or 2, wherein the first light emitting portion has a plurality of first columnar portions including a first light emitting layer, the second light emitting portion has a plurality of second columnar portions including a second light emitting layer.

6. A method for manufacturing a light-emitting device, wherein The method for manufacturing the light emitting device has the following steps: forming a first light emitting portion and a second light emitting portion on a substrate; forming a first electrode on a side of the first light emitting portion opposite to the substrate; forming a second electrode on a side of the second light emitting portion opposite to the substrate, the second electrode having an area smaller than the first electrode; forming a first protective layer on the substrate in a manner of covering the first light emitting portion and the first electrode; forming a second protective layer on the substrate in a manner of covering the second light emitting portion and the second electrode; a first hole is formed in a first position in the first protective layer overlapping the first electrode, and a second hole is formed in a second position in the second protective layer overlapping the second electrode; a first through-hole is formed by forming a second hole having a smaller opening area than the first hole in a bottom surface of the first hole formed in the first position, and exposing a portion of the first electrode; and a second through-hole is formed by forming a third hole having a smaller opening area than the second hole in a bottom surface of the first hole formed in the second position, and exposing a portion of the second electrode, in the process of forming the first through-hole, so that: a first opening area of a first opening in the first hole formed in the first position, which is closest to the side opposite the substrate, is larger than a second opening area of a second opening in the second hole, which is closest to the substrate side, a third opening area of a third opening in the first hole formed in the second position, which is closest to the side opposite the substrate, is larger than a fourth opening area of a fourth opening in the third hole, which is closest to the substrate side, a first area ratio, which is a ratio of the first opening area to the third opening area, is smaller than a second area ratio, which is a ratio of the second opening area to the fourth opening area.

7. The method according to claim 6, wherein as the first light emitting portion, a plurality of first columnar portions including a first light emitting layer are formed, as the second light emitting portion, a plurality of second columnar portions including a second light emitting layer are formed.

8. A projector, wherein, The projector has the light emitting device according to any one of claims 1 to 5.

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