Electro-optical device and electronic apparatus

Abstract

Electro-optical device and electronic device. An organic EL device (1) has: a counter electrode (33); a first reflective layer (52) provided at a first optical distance from the counter electrode (33); a first pixel electrode (31) provided between the counter electrode (33) and the first reflective layer (52); a light-emitting layer (30) provided between the counter electrode (33) and the first pixel electrode (31); an optical distance adjustment layer (57, 58) provided between the first pixel electrode (31) and the first reflective layer (52); and a first relay electrode (71) provided between the first pixel electrode (31) and the first reflective layer (52), electrically connecting the first pixel electrode (31) and the first reflective layer (52), the optical distance adjustment layer (57, 58) being provided at a distance from the first relay electrode (71).

Description

TECHNICAL FIELD

[0001] The present application relates to an electro-optical device and an electronic apparatus. BACKGROUND

[0002] Conventionally, an electro-optical device provided with a light-emitting element such as an organic EL (electroluminescence) element and a color filter that transmits a prescribed wavelength band of light emitted from the light-emitting element is known. In such an electro-optical device, there is an electro-optical device provided with a light resonance structure that resonates light emitted from a light-emitting element.

[0003] For example, in Patent Literature 1, an electro-optical device is disclosed that is configured with one display unit by a pixel configured with a plurality of sub-pixels, and a pixel electrode and a reflection layer are electrically connected via a contact electrode in a light-emitting element corresponding to a sub-pixel. In this electro-optical device, the film thickness of a first distance adjustment layer and a second distance adjustment layer is adjusted so that a light resonance structure that resonates light of a prescribed wavelength band is formed by the reflection layer and the counter electrode.

[0004] Patent Literature 1: Japanese Patent Application Publication No. 2019-29188

[0005] However, in the electro-optical device described in Patent Literature 1, there is a problem in that it is difficult to improve the sealing performance in the sub-pixels for red and green compared to the sub-pixel for blue. The main reason that it is difficult to improve the sealing performance is, for example, the thickness of the lower sealing layer above the contact portion where the contact electrode and the reflection layer are in contact. In detail, if the width of the contact portion is enlarged to sufficiently ensure the contact area of the contact electrode and the reflection layer, the upper layer falls inside the contact portion and a depression is also generated in the light-emitting layer. Therefore, when the lower sealing layer is formed above the light-emitting layer by evaporation or the like, the uniformity of the lower sealing layer can deteriorate and the thickness of the lower sealing layer above the contact portion can become thin due to the difference in the width of the depression. When the thickness of the lower sealing layer becomes thin, the sealing performance decreases and moisture or the like easily enters. That is, an electro-optical device in which the sealing performance needs to be improved. SUMMARY

[0006] The electro-optical device is characterized by having: an electrode; a first reflection layer provided apart from the electrode by a first optical distance; a first pixel electrode provided between the electrode and the first reflection layer; a light-emitting layer provided between the electrode and the first pixel electrode; a first optical distance adjustment layer provided between the first pixel electrode and the first reflection layer; and a first relay layer provided between the first pixel electrode and the first reflection layer, electrically connecting between the first pixel electrode and the first reflection layer, the first optical distance adjustment layer being provided apart from the first relay layer.

[0007] The electronic apparatus is characterized by having the above-described electro-optical device. Attached Figure Description

[0008] Figure 1 This is a block diagram showing the structure of an organic EL device as an electro-optical device in the first embodiment.

[0009] Figure 2 This is an equivalent circuit diagram showing the electrical structure of the light-emitting pixels in an organic EL device.

[0010] Figure 3 This is a top view showing the structure of the display section.

[0011] Figure 4 This is a top view showing the structure of the display section.

[0012] Figure 5 This is a top view showing the configuration of pixels and color filters in the display section.

[0013] Figure 6 This is a cross-sectional view showing the structure of the display section.

[0014] Figure 7 This is a schematic cross-sectional view illustrating the uniformity of the lower sealing layer.

[0015] Figure 8 This is a cross-sectional view showing the structure of the display section.

[0016] Figure 9 This is a cross-sectional view showing the structure of the display section.

[0017] Figure 10 This is a cross-sectional view showing the structure of the display section according to the second embodiment.

[0018] Figure 11 This is a cross-sectional view showing the structure of the display section.

[0019] Figure 12 This is a perspective view showing the appearance of the head-mounted display of the electronic device as described in the third embodiment.

[0020] Figure 13 This is a perspective view showing the appearance of a personal computer as an electronic device.

[0021] Figure 14 This is a schematic cross-sectional view illustrating the uniformity of the lower sealing layer in the prior art.

[0022] Label Explanation

[0023] 1: Organic EL device as electro-optical device; 30: Light-emitting layer; 31: First pixel electrode or second pixel electrode; 33: Counter electrode as electrode; 52: Reflective layer; 57, 58: Optical distance adjustment layer as first optical distance adjustment layer; 58: Optical distance adjustment layer as second optical distance adjustment layer; 71: First relay electrode or second relay electrode or third relay electrode; 300: Head-mounted display as electronic device; 400: Personal computer as electronic device; HaR: First light-emitting region; HaG: Second light-emitting region. DETAILED DESCRIPTION

[0024] Embodiments of the present application will be described below with reference to the accompanying drawings. The embodiments described below are for illustrating one example of the present application. The present application is not limited to the following embodiments.

[0025] In addition, in each of the drawings below, the dimensions of each layer and each portion are made different from the actual dimensions to the extent that each layer and each portion becomes identifiable. In the following description, for example, with respect to a substrate, a description of "on the substrate" indicates any one of a case where the substrate is disposed in contact thereon, a case where the substrate is disposed with other structures therebetween, or a case where the substrate is disposed with a part thereof in contact and a part thereof with other structures therebetween.

[0026] Further, in each of the drawings below, as needed, XYZ axes are indicated as mutually perpendicular coordinate axes, a direction indicated by each arrow is set as a + direction, and a direction opposite to the + direction is set as a - direction. Sometimes, the +Z direction is referred to as the upper side, the -Z direction is referred to as the lower side, and observation from the +Z direction is referred to as plan view observation or plan view. The +Z direction is also the direction in which light is emitted from the organic EL device described later.

[0027] 1. First Embodiment

[0028] In the present embodiment, an organic EL (Electro Luminescence) device is exemplified as an electro-optical device. The organic EL device is, for example, suitably used for a head-mounted display (HMD: Head Mounted Display) and the like as an electronic device described later. Refer to Figure 1 and Figure 2 An outline of the organic EL device 1 of the present embodiment will be described. In addition, Figure 2 A pixel circuit 100 of the mth row and the kth column described later is shown.

[0029] As Figure 1 shown, the organic EL device 1 of the present embodiment includes a display panel 10 having a plurality of sub-pixels Px described later, and a control circuit 20 that controls the operation of the display panel 10.

[0030] Digital image data Video is supplied from an unillustrated higher-level device to the control circuit 20 in synchronization with a synchronization signal. Here, the image data Video is digital data that specifies a gradation level to be displayed by each subpixel Px of the display panel 10. Further, the synchronization signal is a signal that includes a vertical synchronization signal, a horizontal synchronization signal, a dot clock signal, and the like.

[0031] The control circuit 20 generates a control signal Ctr that controls the operation of the display panel 10 in accordance with the synchronization signal, and supplies the generated control signal Ctr to the display panel 10. Further, the control circuit 20 generates an analog image signal Vid in accordance with the image data Video, and supplies the generated image signal Vid to the display panel 10. Here, the image signal Vid is a signal that specifies the luminance of the light-emitting element possessed by each subpixel Px in such a manner that the subpixel Px displays the gradation specified by the image data Video.

[0032] The display panel 10 includes a display section 12 having M scan lines 13 extending along the X axis, 3N data lines 14 extending along the Y axis, and "M x 3N" pixel circuits 100 arranged in correspondence with the intersections of the M scan lines 13 and the 3N data lines 14, and a drive circuit 11 that drives the display section 12. Here, M and N are each an independent natural number of 1 or more.

[0033] In the following description, in order to distinguish among the plurality of subpixels Px, the plurality of scan lines 13, and the plurality of data lines 14, the direction toward the -Y direction is sequentially referred to as the 1st row, the 2nd row,..., and the Mth row, and the direction toward the +X direction is sequentially referred to as the 1st column, the 2nd column,..., and the 3Nth column. Further, the +X direction and the +Y direction are referred to as the A direction, the -X direction and the +Y direction are referred to as the B direction, the -X direction and the -Y direction are referred to as the C direction, and the +X direction and the -Y direction are referred to as the D direction.

[0034] Among the plurality of subpixels Px provided in the display section 12 are a pixel circuit 100 included in a subpixel Px capable of displaying red (R), a pixel circuit 100 included in a subpixel Px capable of displaying green (G), and a pixel circuit 100 included in a subpixel Px capable of displaying blue (B). Further, it is assumed as an example that, in the organic EL device 1, n is set to a natural number that satisfies 1 ≤ n ≤ N, the pixel circuit 100 included in the subpixel Px capable of displaying R is disposed in the (3n - 2)th column among the 1st column to the 3Nth column, the pixel circuit 100 included in the subpixel Px capable of displaying G is disposed in the (3n - 1)th column, and the pixel circuit 100 included in the subpixel Px capable of displaying B is disposed in the 3nth column. The drive circuit 11 includes a scan line drive circuit 111 and a data line drive circuit 112.

[0035] The scan line driving circuit 111 sequentially scans (selects) scan lines 13 from row 1 to row M. Specifically, during the duration of one frame, the scan line driving circuit 111 sequentially sets the scan signals Gw[1] to Gw[M] output to the scan lines 13 from row 1 to row M to a predetermined selection potential for each horizontal scan period, thereby selecting the scan lines 13 sequentially on a row-by-row basis for each horizontal scan period. In other words, during the m-th horizontal scan period of one frame, the scan line driving circuit 111 sets the scan signal Gw[m] output to the scan line 13 of row m to a predetermined selection potential, thereby selecting the scan line 13 of row m. Furthermore, the duration of one frame is the period during which the organic EL device 1 displays one image.

[0036] The data line driving circuit 112 outputs analog data signals Vd[1] to Vd[3N] specifying the grayscale that each pixel circuit 100 should display to the 3N data lines 14 during each horizontal scan period, based on the image signal Vid and the control signal Ctr supplied from the control circuit 20. In other words, the data line driving circuit 112 outputs the data signal Vd[k] to the data line 14 of the kth column during each horizontal scan period.

[0037] In addition, in this embodiment, the image signal Vid output by the control circuit 20 is an analog signal, but the image signal Vid output by the control circuit 20 can also be a digital signal. In this case, the data line drive circuit 112 performs D / A conversion on the image signal Vid to generate analog data signals Vd[1] to Vd[3N].

[0038] like Figure 2 As shown, the pixel circuit 100 includes a light-emitting element 3 and a supply circuit 40 for supplying current to the light-emitting element 3. The light-emitting element 3 includes a pixel electrode 31, a light-emitting functional layer 32, and a counter electrode 33. The pixel electrode 31 functions as an anode that supplies holes to the light-emitting functional layer 32. The counter electrode 33 is electrically connected to a power supply line 16, which is set to a low-potential side of the pixel circuit 100, i.e., a potential Vct, and functions as a cathode that supplies electrons to the light-emitting functional layer 32. Furthermore, holes supplied from the pixel electrode 31 and electrons supplied from the counter electrode 33 recombine in the light-emitting functional layer 32, causing the light-emitting functional layer 32 to emit light.

[0039] Further, although the details will be described later, a red color filter 81R is overlaid on the light emitting element 3 included in the pixel circuit 100 in the sub-pixel Px capable of emitting R light. A green color filter 81G is overlaid on the light emitting element 3 included in the pixel circuit 100 in the sub-pixel Px capable of emitting G light. A blue color filter 81B is overlaid on the light emitting element 3 included in the pixel circuit 100 capable of emitting B light. Hereinafter, the light emitting element 3 included in the pixel circuit 100 in the sub-pixel Px capable of emitting R light will be also referred to as a light emitting element 3R, the light emitting element 3 included in the pixel circuit 100 in the sub-pixel Px capable of emitting G light will be also referred to as a light emitting element 3G, and the light emitting element 3 included in the pixel circuit 100 in the sub-pixel Px capable of emitting B light will be also referred to as a light emitting element 3B.

[0040] The supply circuit 40 has transistors 41, 42 of a P-channel type and a holding capacitor 44. Here, one or both of the transistors 41, 42 can be transistors of an N-channel type. Further, in the present embodiment, the transistors 41, 42 are exemplified as a way of thin film transistors (TFTs), but are not limited thereto. The transistors 41, 42 can be field effect transistors such as MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors).

[0041] In the transistor 41, the gate is electrically connected to the m-th row of the scan line 13, one of the source or the drain is electrically connected to the k-th column of the data line 14, and the other of the source or the drain is electrically connected to the gate of the transistor 42 and one of the two electrodes of the holding capacitor 44.

[0042] In the transistor 42, the gate is electrically connected to the other of the source or the drain of the transistor 41 and one of the two electrodes of the holding capacitor 44, one of the source or the drain is electrically connected to the pixel electrode 31, and the other of the source or the drain is electrically connected to the power supply wiring 15 to which the high potential side of the power supply potential of the pixel circuit 100, that is, the potential Vel is applied.

[0043] In the holding capacitor 44, one of the two electrodes of the holding capacitor 44 is electrically connected to the other of the source or the drain of the transistor 41 and the gate of the transistor 42, and the other of the two electrodes of the holding capacitor 44 is electrically connected to the power supply wiring 15. The holding capacitor 44 functions as a holding capacitor that holds the gate potential of the transistor 42.

[0044] When the scan line drive circuit 111 sets the scan signal Gw[m] to a prescribed selection potential to select the mth row of the scan line 13, the transistor 41 of the sub-pixel Px[m][k] provided in the mth row and the kth column is turned on. Also, when the transistor 41 is turned on, the data signal Vd[k] is supplied from the kth column of the data line 14 to the gate of the transistor 42. In this case, the transistor 42 supplies the light emitting element 3 with a current corresponding to the potential of the data signal Vd[k] supplied to the gate, or more precisely, the potential difference between the gate and the source. That is, the transistor 42 is a drive transistor that supplies the light emitting element 3 with a current. The light emitting element 3 emits light with a luminance corresponding to the magnitude of the current supplied from the transistor 42, that is, a luminance corresponding to the potential of the data signal Vd[k].

[0045] Then, in the case where the scan line drive circuit 111 releases the selection of the mth row of the scan line 13 and the transistor 41 is turned off, the gate potential of the transistor 42 is held by the holding capacitor 44. Therefore, the light emitting element 3 also emits light with a luminance corresponding to the data signal Vd[k] after the transistor 41 is turned off.

[0046] In addition, although the illustration is omitted in Figure 2 , the structural element that electrically connects the pixel electrode 31 possessed by the light emitting element 3 and the supply circuit 40 is referred to as a contact portion 7. Each sub-pixel Px has the light emitting element 3, the supply circuit 40, and a contact region Ca in which the contact portion 7 is disposed. The contact region Ca is a region in which the contact portion 7 can be disposed. The contact portion 7 electrically connects the pixel electrode 31 possessed by the light emitting element 3 and the supply circuit 40.

[0047] Hereinafter, the contact portion 7 provided in the sub-pixel PxR is also referred to as a contact portion 7R, the contact portion 7 provided in the sub-pixel PxG is also referred to as a contact portion 7G, and the contact portion 7 provided in the sub-pixel PxB is also referred to as a contact portion 7B. Furthermore, the contact region Ca in which the contact portion 7R is disposed is also referred to as a contact region CaR, the contact region Ca in which the contact portion 7G is disposed is also referred to as a contact region CaG, and the contact region Ca in which the contact portion 7B is disposed is also referred to as a contact region CaB. Details of the contact portion 7 are described later.

[0048] Referring to Figures 3 to 5 , the planar structure of the display portion 12 will be described. In Figure 3 , the color filter 81 described later is omitted for the sake of facilitating observation of the drawing. With respect to Figure 3 , Figure 4 , the color filter 81 is illustrated, and the illustration of the contact region Ca is omitted for the sake of facilitating observation of the drawing. Figure 5The diagram shows pixel MPx1, pixel MPx2 configured in the +X direction of pixel MPx1, pixel MPx3 configured in the +Y direction of pixel MPx1, pixel MPx4 configured in the +Y direction of pixel MPx2, and color filter 81.

[0049] like Figure 3 As shown, a pixel MPx1 in the display unit 12 includes subpixels PxR, PxG, PxB1, and PxB2. Subpixel PxR includes a light-emitting element 3R. Subpixel PxG includes a light-emitting element 3G. Subpixel PxB1 includes a light-emitting element 3B1. Subpixel PxB2 includes a light-emitting element 3B2. That is, subpixel MPx1 has two subpixels PxB1 and PxB2 capable of displaying B. Current is supplied to subpixels PxB1 and PxB2 from the same supply circuit 40.

[0050] Subpixels PxB1 and PxB2 are arranged along the X-axis. Subpixels PxR and PxG are also arranged along the X-axis. Furthermore, subpixels PxB1 and PxR are arranged along the Y-axis. Subpixels PxG and PxB2 are also arranged along the Y-axis. Subpixel PxB1 and subpixel PxB2 located in the +X direction of subpixel PxB1 are connected by the reflective layer 52, which will be described later. However, the planar arrangement of subpixels PxR, PxG, PxB1, and PxB2 is not limited to the above.

[0051] In this embodiment, it is envisioned that the light-emitting elements 3R, 3G, 3B1, and 3B2 of the pixel MPx respectively form light-emitting regions HaR, HaG, HaB1, and HaB2. Light-emitting regions HaR, HaG, HaB1, and HaB2 emit light in the +Z direction. Hereinafter, light-emitting regions HaR, HaG, HaB1, and HaB2 will sometimes be simply referred to as light-emitting region Ha. Light-emitting region Ha is the region in the area where the pixel electrode 31 is provided, which opens upwards through the pixel separation layer 34 described later. Furthermore, light-emitting region Ha can also be described as the region where the pixel electrode 31 is connected to the light-emitting functional layer 32. Additionally, an example of the first light-emitting region of the present invention is light-emitting region HaR, and an example of the second light-emitting region of the present invention is light-emitting region HaG.

[0052] When viewed from above, the light emitting regions HaR, HaG, HaB1, and HaB2 have a shape of an octagon. The first side, which is located in the C direction as viewed from the center of the light emitting region Ha, and the fifth side, which is located in the A direction as viewed from the center of the light emitting region Ha, are parallel to each other among the sides of the light emitting region Ha. The second side, which is located in the -Y direction as viewed from the center of the light emitting region Ha, and the sixth side, which is located in the +Y direction as viewed from the center of the light emitting region Ha, are parallel to each other among the sides of the light emitting region Ha. The third side, which is located in the D direction as viewed from the center of the light emitting region Ha, and the seventh side, which is located in the B direction as viewed from the center of the light emitting region Ha, are parallel to each other among the sides of the light emitting region Ha. The fourth side, which is located in the +X direction as viewed from the center of the light emitting region Ha, and the eighth side, which is located in the -X direction as viewed from the center of the light emitting region Ha, are parallel to each other among the sides of the light emitting region Ha.

[0053] As viewed from the light emitting region Ha possessed by the sub-pixel Px, the contact region Ca possessed by the sub-pixel Px is located in the A direction. Specifically, the contact region CaR possessed by the sub-pixel PxR is located in the A direction of the light emitting region HaR possessed by the sub-pixel PxR. The contact region CaG possessed by the sub-pixel PxG is located in the A direction of the light emitting region HaG possessed by the sub-pixel PxG. The contact region CaB1 possessed by the sub-pixel PxB1 is located in the A direction of the light emitting region HaB1 possessed by the sub-pixel PxB1. The contact region CaB2 possessed by the sub-pixel PxB2 is located in the A direction of the light emitting region HaB2 possessed by the sub-pixel PxB2.

[0054] The contact regions Ca are arranged along the A direction. The contact portion 7B1 is disposed within the contact region CaB1. The contact portion 7B2 is disposed within the contact region CaB2. An example of the contact portion 7B1, 7B2 of the present application is the third relay electrode 71 described later, and the third pixel electrode 31 described later is electrically connected to the third reflective layer 52 described later via the third relay electrode 71.

[0055] The contact portion 7R is disposed within the contact region CaR. The first pixel electrode 31 described later is electrically connected to the first reflective layer 52 described later via the first relay electrode 71, which is an example of the contact portion 7R of the present application. The contact portion 7G is disposed within the contact region CaG. The second pixel electrode 31 described later is electrically connected to the second reflective layer 52 described later via the second relay electrode 71, which is an example of the contact portion 7G of the present application.

[0056] As Figure 4As shown, the color filter 81 includes the color filters 81R, 81G, and 81B in the display portion 12. The color filter 81R is positioned above the light emitting element 3R and overlaps the sub-pixel PxR when viewed from above. The color filter 81G is positioned above the light emitting element 3G and overlaps the sub-pixel PxG when viewed from above. The color filter 81B is positioned above the light emitting elements 3B1 and 3B2 and overlaps the sub-pixels PxB1 and PxB2 when viewed from above. The color filters 81R, 81G, and 81B are rectangular and are arranged so as not to overlap each other. The color filters 81R, 81G, and 81B can partially overlap each other.

[0057] As shown, the color filter 81 adjacent to the sub-pixel PxR of each of the pixels MPx1 to MPx4 in the +X direction is the color filter 81G. The color filter 81 adjacent to the sub-pixel PxG of each of the pixels MPx1 to MPx4 in the +X direction is the color filter 81R. The color filter 81 adjacent to the sub-pixel PxB of each of the pixels MPx1 to MPx4 in the +X direction is the color filter 81B, which is not shown. The above-described relationship is the same in the -X direction as in the +X direction. Figure 5 As shown, the color filter 81 adjacent to the sub-pixel PxR of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxG of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxB of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81R and the color filter 81G. The above-described relationship is the same in the -Y direction as in the +Y direction.

[0058] As shown, the color filter 81 adjacent to the sub-pixel PxR of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxG of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxB of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81R and the color filter 81G. The above-described relationship is the same in the -Y direction as in the +Y direction.

[0059] Figures 6 to 9 As shown, the color filter 81 adjacent to the sub-pixel PxR of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxG of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxB of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81R and the color filter 81G. The above-described relationship is the same in the -Y direction as in the +Y direction. Figure 14 . Figure 6 As shown, the color filter 81 adjacent to the sub-pixel PxR of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxG of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxB of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81R and the color filter 81G. The above-described relationship is the same in the -Y direction as in the +Y direction. Figure 4 Figure 7 As shown, the color filter 81 adjacent to the sub-pixel PxR of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxG of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxB of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81R and the color filter 81G. The above-described relationship is the same in the -Y direction as in the +Y direction. Figure 8 Figure 4 As shown, the color filter 81 adjacent to the sub-pixel PxR of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxG of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxB of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81R and the color filter 81G. The above-described relationship is the same in the -Y direction as in the +Y direction. Figure 9 Figure 4 As shown, the color filter 81 adjacent to the sub-pixel PxR of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxG of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxB of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81R and the color filter 81G. The above-described relationship is the same in the -Y direction as in the +Y direction. Figure 14 Figure 7 As shown, the color filter 81 adjacent to the sub-pixel PxR of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxG of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxB of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81R and the color filter 81G. The above-described relationship is the same in the -Y direction as in the +Y direction.

[0060] As shown, the color filter 81 adjacent to the sub-pixel PxR of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxG of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81B. The color filter 81 adjacent to the sub-pixel PxB of each of the pixels MPx1 to MPx4 in the +Y direction is the color filter 81R and the color filter 81G. The above-described relationship is the same in the -Y direction as in the +Y direction. Figure 6 ​​​​​The explanation mainly describes the structure in the sub-pixel PxR, regarding... Figure 8 The explanation mainly describes the structure in the sub-pixel PxG, regarding... Figure 9 The description mainly focuses on the structure of sub-pixel PxB1. Furthermore, sub-pixel PxB2 has the same structure as sub-pixel PxB1, therefore its description is omitted. Also, the reflective layer 52 disposed on sub-pixel PxR is the first reflective layer of this invention, the reflective layer 52 disposed on sub-pixel PxG is the second reflective layer of this invention, and the reflective layers 52 disposed on sub-pixels PxB1 and PxB2 are the third reflective layers of this invention.

[0061] like Figure 6 As shown, the display unit 12 includes a component substrate 5, a protective substrate 9, and an adhesive layer 90 disposed between the component substrate 5 and the protective substrate 9. In the organic EL device 1, a top-emitting method is envisioned, in which light is emitted upward from the protective substrate 9.

[0062] The organic EL device 1 has a counter electrode 33 as an electrode, a first reflective layer 52, a first pixel electrode 31, a light-emitting layer 30, optical distance adjustment layers 57 and 58 as a first optical distance adjustment layer, and a first relay electrode 71 in the sub-pixel PxR of the display unit 12.

[0063] In the light-emitting region HaR, the first reflective layer 52 is positioned at a first optical distance from the counter electrode 33. In other words, the first optical distance is the product of the distance along the Z-axis between the surface above the counter electrode 33 and the surface above the first reflective layer 52 in the light-emitting region HaR, and their refractive indices.

[0064] The first pixel electrode 31 is disposed between the opposing electrode 33 and the first reflective layer 52. The light-emitting layer 30 is disposed between the opposing electrode 33 and the first pixel electrode 31. Optical distance adjustment layers 57 and 58 are disposed between the first pixel electrode 31 and the first reflective layer 52. The first relay electrode 71 is disposed between the first pixel electrode 31 and the first reflective layer 52, electrically connecting the first pixel electrode 31 and the first reflective layer 52.

[0065] The optical distance adjustment layers 57 and 58 are separated from the first relay electrode 71. That is, they are not located in the area where they overlap with the contact portion of the first relay electrode 71 and the first reflective layer 52 when viewed from above.

[0066] The adhesive layer 90 is a transparent resin layer that bonds the component substrate 5 and the protective substrate 9. The adhesive layer 90 is formed, for example, from a transparent resin material such as epoxy resin. The protective substrate 9 is a transparent substrate disposed above the adhesive layer 90. The protective substrate 9 protects components such as the color filter 81 disposed below the protective substrate 9. The protective substrate 9 is, for example, a quartz substrate.

[0067] The element substrate 5 has a substrate 50, a circuit layer 49 formed on the substrate 50, an interlayer insulating layer 51 laminated on the circuit layer 49, a reflection layer 52, a reflection enhancement layer 53, a first insulating layer 54 as a protective layer, a second insulating layer 55 as a protective layer, a first relay electrode 71, a third insulating layer 72 as a protective layer, optical distance adjustment layers 57, 58, a pixel electrode 31, a light emitting layer 30, a sealing layer 60, and a color filter layer 8. Details will be described later, and the light emitting layer 30 includes the light emitting element 3R described above. The light emitting element 3 emits light upward and downward. The color filter layer 8 includes a color filter 81.

[0068] The substrate 50 employs a substrate capable of mounting various wirings and various circuits. Specifically, the substrate 50 can employ, for example, a silicon substrate, a quartz substrate, or a glass substrate, or the like. The circuit layer 49 is formed on the substrate 50. The circuit layer 49 includes various wirings such as the scan line 13, the data line 14, and the like, various circuits such as the drive circuit 11 and the pixel circuit 100, and the like. The interlayer insulating layer 51 is laminated on the circuit layer 49.

[0069] The interlayer insulating layer 51 employs, for example, an insulating material such as silicon oxide. The reflection layer 52 is laminated on the interlayer insulating layer 51. The reflection layer 52 reflects light emitted from the light emitting element 3 of the light emitting layer 30 upward. The reflection layer 52 employs, for example, a film of an alloy including aluminum and copper on a titanium layer. The reflection layer 52 is a conductive layer having reflectivity to the light described above, and is formed in an island shape separately for each sub-pixel Px.

[0070] The reflection enhancement layer 53 is arranged to cover the surface on the upper side of the reflection layer 52, and has a function of improving the light reflection characteristics of the reflection layer 52. The reflection enhancement layer 53 employs, for example, an insulating material having light transmittance, such as silicon oxide or the like.

[0071] The first insulating layer 54 as a protective layer is provided on the surface on the upper side of the reflection enhancement layer 53. In addition, the first insulating layer 54 is also provided on the inner side of the gap 52CT provided in the reflection layer 52. Therefore, the first insulating layer 54 has a recessed portion 54a corresponding to the recess of the gap 52CT. An embedded insulating film 56 is formed so as to fill the inner side of the recessed portion 54a. The second insulating layer 55 as a protective layer is provided so as to cover the upper side of the first insulating layer 54 and the embedded insulating film 56. The first insulating layer 54 and the second insulating layer 55 employ, for example, silicon nitride.

[0072] A gap 53CT that penetrates the reflection enhancement layer 53, the first insulating layer 54, the second insulating layer 55, and the third insulating layer 72 as a protective layer described later is provided at a position corresponding to the contact portion 7R when viewed from the top. Details will be described later, and the first relay electrode 71, the first pixel electrode 31, and the like are provided on the inner side of the gap 53CT.

[0073] The optical distance adjustment layers 57 and 58, the third insulating layer 72, and the pixel separation layer 34 are arranged above the second insulating layer 55 serving as a protective layer. In detail, the optical distance adjustment layers 57 and 58 are arranged in a region including the light emitting region HaR in the C direction with respect to the gap 53CT. The optical distance adjustment layer 57 is arranged on the surface of the second insulating layer 55, and the optical distance adjustment layer 58 is stacked on the surface of the optical distance adjustment layer 57. The third insulating layer 72 and the first relay electrode 71 are arranged in the A direction of the optical distance adjustment layers 57 and 58.

[0074] The optical distance adjustment layer 57 and the third insulating layer 72 are arranged so as to have substantially the same position in the direction of the Z axis. The optical distance adjustment layer 58 and the C-direction end portion of the first relay electrode 71 are arranged so as to have substantially the same position in the direction of the Z axis. The A-direction end portions of the optical distance adjustment layers 57 and 58 and the C-direction end portions of the third insulating layer 72 and the first relay electrode 71 are separated by extending a portion of the first pixel electrode 31 to the second insulating layer 55 below. That is, the optical distance adjustment layers 57 and 58 are arranged so as to be separated from the first relay electrode 71. In other words, in plan view, the first relay electrode 71 does not overlap the optical distance adjustment layers 57 and 58, and the A-direction end portions of the optical distance adjustment layers 57 and 58 are arranged between the light emitting region HaR at which the first pixel electrode 31 and the light emitting layer 30 meet and the first relay electrode 71.

[0075] Therefore, in the region where the first relay electrode 71 and the first pixel electrode 31 meet, the first relay electrode 71 is separated from the optical distance adjustment layers 57 and 58. Thus, the height difference between the light emitting region HaR and the contact region CaR can be reduced. This height difference is reflected in the height difference of the lower side sealing layer 61 formed above, and thus, the reduction of this height difference reduces the height difference of the lower side sealing layer 61. Also, in the lower side sealing layer 61, since the generation of cracks due to the height difference of the lower side sealing layer 61 is suppressed, the sealing performance of the lower side sealing layer 61 can be further improved.

[0076] Further, the A-direction end portions of the optical distance adjustment layers 57 and 58 are separated from the C-direction end portion of the first relay electrode 71. That is, the A-direction end portions of the optical distance adjustment layers 57 and 58 do not jump over the C-direction end portion of the first relay electrode 71. Therefore, in the lower side sealing layer 61 above the A-direction end portion of the light emitting region HaR and the lower side sealing layer 61 above the C-direction end portion of the pixel separation layer 34, the generated height difference is small. When this height difference is large, there is a case where light is emitted further in the A direction compared to the A-direction end portion of the light emitting region HaR, but this unnecessary light emission can be suppressed. That is, the generation of color deviation in the organic EL device 1 can be reduced.

[0077] The optical distance adjustment layers 57, 58 have a function of adjusting the optical distance between the counter electrode 33 and the reflective layer 52 for each sub-pixel PxR, PxG, PxB. The optical distance adjustment layer 57 is provided as a first optical distance adjustment layer in the sub-pixel PxR. The optical distance adjustment layer 58 is provided as a second optical distance adjustment layer in the sub-pixel PxG. Neither of the optical distance adjustment layers 57, 58 is provided in the sub-pixels PxB1, PxB2.

[0078] In the present embodiment, the optical distance adjustment layers 57, 58 are insulating layers containing silicon oxide. Thereby, the optical distance adjustment layers 57, 58 are imparted with light-transmitting property and insulating property. The optical distance adjustment layers 57, 58 are not limited to insulating layers.

[0079] The third insulating layer 72 is provided above the second insulating layer 55 around the gap 53CT. The third insulating layer 72 is made of an insulating material such as silicon oxide. Here, the first insulating layer 54, the second insulating layer 55, the third insulating layer 72, and the optical distance adjustment layers 57, 58 as protective layers are transparent layers disposed between the reflective layer 52 and the pixel electrode 31, but have different functions. The protective layers having the first insulating layer 54, the second insulating layer 55, and the third insulating layer 72 are commonly provided in the sub-pixels PxR, PxG, PxB1, PxB2 to protect the contact portion 7 and the like. In contrast, the optical distance adjustment layers 57, 58 are selectively disposed in accordance with the color of each sub-pixel Px in order to form the optical resonance structure.

[0080] The first relay electrode 71 is provided so as to cover the top of the third insulating layer 72 and the inner side of the gap 53CT. Thereby, the first relay electrode 71 is in contact with and electrically connected to the first reflective layer 52 at the bottom of the gap 53CT. In the present embodiment, in order to make the electrical connection of the first relay electrode 71 to the first reflective layer 52 more reliable, the width of the gap 53CT, that is, the width at which the first relay electrode 71 is in contact with the first reflective layer 52 is made larger than ever in the A direction and the C direction. The first relay electrode 71 is made of, for example, a conductive material such as tungsten, titanium, and titanium nitride.

[0081] The light-emitting layer 30 has the pixel electrode 31, the pixel separation layer 34, a light-emitting functional layer 32 covering the top of the pixel electrode 31 and the pixel separation layer 34, and the counter electrode 33 stacked on the top of the light-emitting functional layer 32.

[0082] The pixel electrode 31 is a transparent layer having conductivity and is formed in an island shape for each sub-pixel Px. The first pixel electrode 31 is disposed above the first relay electrode 71 inside the gap 53CT and above the optical distance adjustment layers 57, 58 in the C direction of the gap 53CT. The first pixel electrode 31 is in contact with and electrically connected to the first relay electrode 71 above the first relay electrode 71 inside the gap 53CT. Thus, the first reflective layer 52 is electrically connected to the first pixel electrode 31 via the first relay electrode 71.

[0083] Further, as described above, the first pixel electrode 31 is provided so that the A-direction end portion of the optical distance adjustment layers 57, 58 is separated from the C-direction end portion of the first relay electrode 71. The first pixel electrode 31 is disposed over the light emitting region HaR, and the A-direction end portion of the pixel electrode 31 is positioned at a position further in the C direction than the recess 54a. The first pixel electrode 31 is made of, for example, a transparent material having conductivity such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), or the like.

[0084] The pixel separation layer 34 is provided so as to cover the peripheral portion of the first pixel electrode 31 and the like other than above the light emitting region HaR. In detail, the A-direction end portion of the pixel separation layer 34 is positioned at the boundary portion of the light emitting region HaB1, and the C-direction end portion is positioned in the vicinity of the light emitting region HaR. The pixel separation layer 34 covers above the peripheral portion of the first pixel electrode 31 inside the gap 53CT, the A-direction end portions of the first pixel electrode 31 and the first relay electrode 71, above the second insulating layer 55 in the A direction of the gap 53CT, and the like. The pixel separation layers 34 divide the plurality of pixels Px provided in the display portion 12 from each other in plan view. The pixel separation layer 34 is made of, for example, an insulating material such as silicon oxide, and electrically insulates between the adjacent light emitting elements 3.

[0085] Although not illustrated, the light emitting functional layer 32 has a hole injection layer, a hole transport layer, an organic light emitting layer, and an electron transport layer. The light emitting functional layer 32 covers above the pixel electrode 31 and the pixel separation layer 34 and is provided in an entire surface shape over the plurality of sub-pixels Px. The light emitting functional layer 32 is provided so as to fill in the inside of the gap 53CT, and thus, a shape of a recess in the inside of the gap 53CT is reflected on the light emitting functional layer 32. Thus, in the light emitting functional layer 32, a recess is generated at a position corresponding to the gap 53CT in plan view.

[0086] The light emitting functional layer 32 is supplied with holes from a region in the pixel electrode 31 that is not covered by the pixel separation layer 34 and emits white light. The white light emitted from the light emitting element 3 is light containing red light, green light, and blue light. Further, in the present specification, a configuration included in a region including the light emitting region Ha and the contact region Ca is regarded as a sub-pixel Px in plan view.

[0087] The counter electrode 33 covers the upper side of the light-emitting functional layer 32 and is provided in a full-surface shape over the plurality of sub-pixels Px. The counter electrode 33 has light-transmitting property, light-reflecting property, and electric conductivity. A recess corresponding to the recess of the gap 53CT is formed on the surface of the upper side of the counter electrode 33. The counter electrode 33 employs, for example, an electrically conductive material such as an alloy of magnesium and silver.

[0088] In the organic EL device 1, the light-resonant structure is formed between the reflection layer 52 and the counter electrode 33 by the arrangement of the optical distance adjustment layers 57 and 58. Therefore, the light emitted from the light-emitting functional layer 32 is repeatedly reflected between the reflection layer 52 and the counter electrode 33. Thus, the intensity of the above-described light of a wavelength corresponding to the optical distance between the reflection layer 52 and the counter electrode 33 is increased, and the light is emitted upward through the counter electrode 33.

[0089] In the present embodiment, although not particularly limited, the intensity of the light of 610 nm wavelength is increased in the sub-pixel PxR, the intensity of the light of 540 nm wavelength is increased in the sub-pixel PxG, and the intensity of the light of 470 nm wavelength is increased in the sub-pixels PxB1 and PxB2, for example, by the thickness and arrangement of the optical distance adjustment layers 57 and 58. Thus, the red light of which the luminance of the light of 610 nm wavelength is the largest is emitted from the sub-pixel PxR, the green light of which the luminance of the light of 540 nm wavelength is the largest is emitted from the sub-pixel PxG, and the blue light of which the luminance of the light of 470 nm wavelength is the largest is emitted from the sub-pixels PxB1 and PxB2.

[0090] The sealing layer 60 covers the upper side of the counter electrode 33 and is provided in a full-surface shape over the plurality of sub-pixels Px. The sealing layer 60 has a lower sealing layer 61, a planarization layer 62, and an upper sealing layer 63. In the sealing layer 60, the lower sealing layer 61, the planarization layer 62, and the upper sealing layer 63 are sequentially stacked upward from the counter electrode 33. The lower sealing layer 61 and the upper sealing layer 63 are transparent layers having insulating property, and suppress the intrusion of moisture, oxygen, and the like into the light-emitting layer 30. The lower sealing layer 61 and the upper sealing layer 63 employ, for example, silicon oxynitride. The planarization layer 62 is a transparent layer that planarizes the concavo-convexes corresponding to the structural members of the lower layer. The planarization layer 62 employs, for example, a transparent resin material such as an epoxy-based resin.

[0091] Here, the uniformity at the time of formation of the lower sealing layer 61 is described by comparing the organic EL device 1 with a conventional organic EL device. In the conventional organic EL device shown in FIG. 10, the width of the contact surface in the A direction and the C direction is increased in order to make the electrical connection of the reflection layer 552 and the first relay electrode 571 more reliable, as with the organic EL device 1 of the present embodiment. In addition, the width of the contact surface in the A direction and the C direction is increased in order to make the electrical connection of the reflection layer 552 and the second relay electrode 572 more reliable. Figure 14 In the conventional organic EL device shown in FIG. 10, as with the organic EL device 1 of the present embodiment, the width of the contact surface in the A direction and the C direction is increased in order to make the electrical connection of the reflection layer 552 and the first relay electrode 571 more reliable. In addition, the width of the contact surface in the A direction and the C direction is increased in order to make the electrical connection of the reflection layer 552 and the second relay electrode 572 more reliable. Figure 7 and Figure 14In the figure, the surface of the lower sealing layer 61, 561 is indicated by a solid line, and the surface of the lower sealing layer 61, 561 during formation is indicated by a broken line.

[0092] As shown in FIG. 6, in the contact portion 7R of the conventional organic EL device, the first relay electrode 571 is electrically connected to the reflective layer 552. The first relay electrode 571 is electrically connected to the pixel electrode 531 by being in contact at other portions in the C direction, which is not shown. Figure 14

[0093] The first relay electrode 571 is provided along the inner side of the gap 553CT. Therefore, a recess is generated in the first relay electrode 571. The optical distance adjustment layers 557, 558, the pixel electrode 531, the pixel separation layer 534, the light emitting functional layer 532, and the counter electrode 533 are sequentially stacked above the first relay electrode 571 including the recess. The shape of the recess of the first relay electrode 571 is reflected to the counter electrode 533, and a recess is also generated in the counter electrode 533.

[0094] Although the width of the contact surface of the first relay electrode 571 and the reflective layer 552 is enlarged, since the above-described layers are provided inside the recess of the first relay electrode 571, the width of the recess generated in the counter electrode 533 is narrow. Also, when the lower sealing layer 561 is formed by a vapor deposition method or the like, during formation, the formation material of the lower sealing layer 561 is attached in a hanging state. Therefore, there is a tendency that the recess is blocked above, uniformity is deteriorated, and the formation material is difficult to accumulate in the bottom of the recess. Thus, the thickness of the lower sealing layer 561 is thinned at the bottom of the recess of the counter electrode 533, and thus it is difficult to improve the sealing performance.

[0095] Further, although not shown, in the conventional organic EL device, in the contact portion 7G of the sub-pixel PxG, the optical distance adjustment layer is also provided inside the above-described recess, and thus it is also difficult to improve the sealing performance as in the conventional contact portion 7R. In addition, in the conventional organic EL device, it is also possible to improve the uniformity by further enlarging the width of the recess in the contact portions 7R, 7G, but since there is a limit to the enlargement of the width of the contact portions 7R, 7G due to the density and arrangement of the sub-pixels Px, it is difficult to improve the sealing performance.

[0096] In contrast to this, as shown in FIG. 7, in the contact portion 7R of the organic EL device according to the present embodiment, the first relay electrode 571 is electrically connected to the reflective layer 552. The first relay electrode 571 is electrically connected to the pixel electrode 531 by being in contact at other portions in the C direction, which is not shown. Figure 7 ​As shown, in the present embodiment, the pixel electrode 31, the pixel separation layer 34, the light-emitting functional layer 32, and the counter electrode 33 are sequentially stacked over the recessed portion of the first relay electrode 71. Since the optical distance adjustment layers 57 and 58 are not provided inside the recessed portion of the first relay electrode 71, the width of the recessed portion generated at the counter electrode 33 is wider than in the past. Therefore, even if the lower sealing layer 61 is formed by a vapor deposition method or the like, the upper portion of the recessed portion is not easily clogged during the formation process, and the thickness of the lower sealing layer 61 at the bottom of the recessed portion becomes thick. Thus, the sealing performance can be improved more than in the past.

[0097] In addition, although not shown, in the present embodiment, the contact portion 7G of the sub-pixel PxG is also in the same form as the contact portion 7R described above. Therefore, in the sub-pixel PxG, the uniformity of the lower sealing layer 61 can also be improved compared to the past, and thus the sealing performance is improved.

[0098] Returning to Figure 6 , the color filter layer 8 is provided over the upper sealing layer 63. The color filter layer 8 includes color filters 81R, 81B, and a color filter 81G not shown. The color filter 81R has a function of transmitting red light, the color filter 81G has a function of transmitting green light, and the color filter 81B has a function of transmitting blue light. The color filters 81 are formed, for example, by performing patterning after applying a photosensitive resin including pigments capable of exhibiting each function. A protective substrate 9 is provided over the color filter layer 8 with an adhesive layer 90 interposed therebetween.

[0099] As Figure 8 shown, the organic EL device 1 includes, in the sub-pixel PxG of the display portion 12, the counter electrode 33 as an electrode, the second reflection layer 52, the second pixel electrode 31, the light-emitting layer 30, the optical distance adjustment layer 58 as a second optical distance adjustment layer, and the second relay electrode 71. In addition, regarding the structure of the sub-pixel PxG, only the structure different from the sub-pixel PxR is described, the same reference numerals are used for the same structure as the sub-pixel PxR, and the description is omitted.

[0100] In the light-emitting region HaG, the second reflection layer 52 is provided apart from the counter electrode 33 by a second optical distance. In other words, the second optical distance is a product of the distance in the direction along the Z axis between the face over the counter electrode 33 and the face over the second reflection layer 52 and the refractive index therebetween. The second optical distance is shorter than the first optical distance in the light-emitting region HaR.

[0101] The second pixel electrode 31 is provided between the counter electrode 33 and the second reflective layer 52. The light-emitting layer 30 is provided between the counter electrode 33 and the second pixel electrode 31. The second relay electrode 71 is provided between the second pixel electrode 31 and the second reflective layer 52, and electrically connects the second pixel electrode 31 and the second reflective layer 52.

[0102] The optical distance adjustment layer 58 is provided between the second pixel electrode 31 and the second reflective layer 52, and the optical distance adjustment layer 57 is not provided. That is, the second optical distance adjustment layer of the sub-pixel PxG is thinner than the first optical distance adjustment layer in the sub-pixel PxR. The optical distance adjustment layer 58 is provided apart from the second relay electrode 71. Further, the optical distance adjustment layer 58 is not provided in a region overlapping a contact portion in plan view with the second relay electrode 71 and the second reflective layer 52. That is, in plan view, the second relay electrode 71 does not overlap the optical distance adjustment layer 58, and an A-direction end portion of the optical distance adjustment layer 58 is disposed between the light-emitting region HaG where the second pixel electrode 31 and the light-emitting layer 30 meet and the second relay electrode 71.

[0103] Thus, in a region where the second relay electrode 71 and the second pixel electrode 31 meet, the second relay electrode 71 is apart from the optical distance adjustment layer 58. Therefore, a height difference between the light-emitting region HaG and the contact portion 7G can be reduced. This height difference is reflected on a height difference of the lower side sealing layer 61 formed above, and thus, the reduction of this height difference reduces the height difference of the lower side sealing layer 61. Further, in the lower side sealing layer 61, since generation of a crack due to the height difference of the lower side sealing layer 61 is suppressed, the sealing performance of the lower side sealing layer 61 can be further improved.

[0104] Further, the A-direction end portion of the optical distance adjustment layer 58 is apart from the C-direction end portion of the second relay electrode 71. That is, the A-direction end portion of the optical distance adjustment layer 58 does not jump over the C-direction end portion of the second relay electrode 71. Therefore, in the lower side sealing layer 61 above the A-direction end portion of the light-emitting region HaG and the lower side sealing layer 61 above the C-direction end portion of the pixel separation layer 34, a generated height difference is small. When this height difference is large, there is a case where light is emitted further in the A-direction compared to the A-direction end portion of the light-emitting region HaG, but this unnecessary light emission can be suppressed. That is, generation of color deviation in the organic EL device 1 can be reduced.

[0105] As Figure 9As shown, the organic EL device 1 has, in the sub-pixel PxB1 of the display portion 12, the opposing electrode 33, the third reflective layer 52, the third pixel electrode 31, the light-emitting layer 30, and the third relay electrode 71 as electrodes. The sub-pixels PxB1 and PxB2 do not have the optical distance adjustment layer. Note that the structure of the sub-pixel PxB1 is described only for the structure different from the sub-pixel PxR, and the same reference numerals are used for the same structure as that of the sub-pixel PxR and the description thereof is omitted.

[0106] In the light-emitting region HaB1, the third reflective layer 52 is provided apart from the opposing electrode 33 by a third optical distance. In other words, the third optical distance is the product of the distance in the direction along the Z axis between the upper face of the opposing electrode 33 and the upper face of the third reflective layer 52 in the light-emitting region HaB1 and the refractive index therebetween. The third optical distance is shorter than the second optical distance in the light-emitting region HaG.

[0107] The third pixel electrode 31 is provided between the opposing electrode 33 and the third reflective layer 52, and the light-emitting layer 30 is provided between the opposing electrode 33 and the third pixel electrode 31. The third relay electrode 71 is provided between the third pixel electrode 31 and the third reflective layer 52. The third relay electrode 71 electrically connects the third pixel electrode 31 and the third reflective layer 52.

[0108] As described above, in the sub-pixel PxR, the optical distance adjustment layers 57 and 58 are provided in a region including the light-emitting region HaR, and a region overlapping with the first relay electrode 71 when viewed from above is not provided with the optical distance adjustment layers 57 and 58. Further, in the sub-pixel PxG, the optical distance adjustment layer 58 is provided in a region including the light-emitting region HaG, and a region overlapping with the second relay electrode when viewed from above is not provided with the optical distance adjustment layer 58. Moreover, in the sub-pixels PxB1 and PxB2, the optical distance adjustment layer is not provided. Thus, the distance between the first reflective layer 52 and the opposing electrode 33 in a region where the first relay electrode 71 is provided, the distance between the second reflective layer 52 and the opposing electrode 33 in a region where the second relay electrode 71 is provided, and the distance between the third reflective layer 52 and the opposing electrode 33 in a region where the third relay electrode 71 is provided are equal.

[0109] Thus, the inner side of the contact portions 7R and 7B widens, and the width of the recess produced in the light-emitting layer 30 above the corresponding portion also widens. Thus, in the case where the lower side sealing layer 61 is formed by evaporation, the thickness of the lower side sealing layer 61 can be made thicker while the uniformity is improved.

[0110] According to the present embodiment, the following effects can be obtained.

[0111] The sealing performance can be improved above the first relay electrode 71. Specifically, in the sub-pixel PxR, the first relay electrode 71 is disposed apart from the optical distance adjustment layers 57, 58, and the optical distance adjustment layers 57, 58 are not disposed inside the contact portion 7R of the first relay electrode 71 and the first reflective layer 52. Thus, the inside of the contact portion 7R is widened, and the width of the depression generated above the light-emitting layer 30 is also widened. Thus, when the lower sealing layer 61 is formed above the light-emitting layer 30 by evaporation, the uniformity is improved, and the thickness of the lower sealing layer 61 is ensured. Thus, the organic EL device 1 in which the sealing performance above the contact portion 7R in the first relay electrode 71 is improved can be provided.

[0112] The sealing performance can be improved above the second relay electrode 71. Specifically, in the sub-pixel PxG, the second relay electrode 71 is disposed apart from the optical distance adjustment layer 58, and the optical distance adjustment layer 58 is not disposed inside the contact portion 7aG of the second relay electrode 71 and the second reflective layer 52. Thus, the inside of the contact portion 7aG is widened, and the width of the depression generated above the light-emitting layer 30 is also widened. Thus, when the lower sealing layer 61 is formed above the light-emitting layer 30 by evaporation, the uniformity is improved, and the thickness of the lower sealing layer 61 is ensured. Thus, the organic EL device 1 in which the sealing performance above the contact portion 7G in the second relay electrode 71 is improved can be provided.

[0113] 2. Second Embodiment

[0114] In the present embodiment, as in the first embodiment, an organic EL device is exemplified as an electro-optical device. The light-emitting device is also suitable for the HMD described later. The organic EL device of the present embodiment differs from the organic EL device 1 of the first embodiment in that the first optical distance adjustment layer and the second optical distance adjustment layer are made of different materials. Thus, the same reference numerals are used for the same structures as in the first embodiment, and the repeated description is omitted.

[0115] Reference Figure 10 and Figure 11 The structure of the first optical distance adjustment layer and the second optical distance adjustment layer in the organic EL device of the present embodiment will be described. In Figure 10 , the region corresponding to the contact portion 7R in Figure 6 is enlarged. In Figure 11 , the region corresponding to the contact portion 7G in Figure 8 is enlarged. In addition, the description of Figure 10 is given for the structure in the sub-pixel PxR, and the description of Figure 11 is given for the structure in the sub-pixel PxG.

[0116] As in Figure 10As shown, optical distance adjustment layers 257 and 258 are provided as a first optical distance adjustment layer in the sub-pixel PxR. The planar and cross-sectional configurations of the optical distance adjustment layers 257 and 258 are the same as those of the optical distance adjustment layers 57 and 58 in the first embodiment. The optical distance adjustment layers 257 and 258 are transparent conductive layers containing the same material as the first pixel electrode. Specifically, the optical distance adjustment layers 257 and 258 are, for example, ITO or IZO.

[0117] like Figure 11 As shown, an optical distance adjustment layer 258 is provided in the sub-pixel PxG as a second optical distance adjustment layer. The planar and cross-sectional configurations of the optical distance adjustment layer 258 are the same as those of the optical distance adjustment layer 58 in the first embodiment.

[0118] According to this embodiment, the same effects as in the first embodiment can be obtained.

[0119] 3. Third Implementation Method

[0120] Head-mounted displays and personal computers are examples of electronic devices in this embodiment.

[0121] like Figure 12 As shown, the head-mounted display 300, an electronic device according to this embodiment, includes temples 310, a beam 320, and projection optical systems 301L and 301R. Although not shown in the figures, projection optical system 301L has an electro-optical device for the left eye, and projection optical system 301R has an electro-optical device for the right eye. These electro-optical devices employ the organic EL device of the above embodiment. As a result, the sealing performance of sub-pixels PxR and PxG is improved, the intrusion of moisture and the like is suppressed, and a head-mounted display 300 with improved reliability can be provided.

[0122] like Figure 13 As shown, the personal computer 400, which is the electronic device of this embodiment, includes the organic EL device 1 of the above embodiment for displaying various images and a main body 403 provided with a power switch 401 and a keyboard 402. Therefore, a personal computer 400 with improved sealing performance of sub-pixels PxR and PxG, thereby suppressing the intrusion of moisture and the like, and improving reliability can be provided.

[0123] As an electronic device using the electro-optical device of the present application, in addition to the above-described electronic devices, for example, a display of a mobile phone, a smartphone, a portable information terminal (PDA: Personal Digital Assistants), a digital still camera, a television, a video camera, a car navigation device, a dashboard for a vehicle, and the like, an electronic notebook, electronic paper, a calculator, a word processor, a workstation, a video phone, a POS (Point Of Sale) terminal, and the like can be given. Furthermore, the organic EL device of the above-described embodiment can be used as a display portion of an electric device such as a printer, a scanner, a facsimile, and a video player.

Claims

1. An electro-optical device, characterized by, It has: an electrode; a first reflective layer disposed apart from the electrode by a first optical distance; a first pixel electrode disposed between the electrode and the first reflective layer; a light-emitting layer disposed between the electrode and the first pixel electrode; a first optical distance adjustment layer disposed between the first pixel electrode and the first reflective layer; and a first relay layer disposed between the first pixel electrode and the first reflective layer, electrically connecting the first pixel electrode and the first reflective layer, the first optical distance adjustment layer is disposed apart from the first relay layer, in plan view, the first relay layer does not overlap the first optical distance adjustment layer.

2. The electro-optical device of claim 1, wherein, The electro-optical device further has: a second reflective layer disposed apart from the electrode by a second optical distance shorter than the first optical distance; a second pixel electrode disposed between the electrode and the second reflective layer; a second optical distance adjustment layer disposed between the second pixel electrode and the second reflective layer, thinner than the first optical distance adjustment layer; and a second relay layer disposed between the second pixel electrode and the second reflective layer, electrically connecting the second pixel electrode and the second reflective layer, the second optical distance adjustment layer is disposed apart from the second relay layer.

3. The electro-optical device according to claim 2, wherein in plan view, the first relay layer does not overlap the first optical distance adjustment layer, in plan view, the second relay layer does not overlap the second optical distance adjustment layer.

4. The electro-optical device according to claim 1, wherein in plan view, an end portion of the first optical distance adjustment layer is disposed between the first relay layer and a first light-emitting region where the first pixel electrode and the light-emitting layer meet.

5. The electro-optical device according to claim 1, wherein in plan view, an end portion of the first optical distance adjustment layer is disposed between the first relay layer and a first light-emitting region where the first pixel electrode and the light-emitting layer meet.

6. The electro-optical device according to claim 2, wherein in plan view, an end portion of the first optical distance adjustment layer is disposed between the first relay layer and a first light-emitting region where the first pixel electrode and the light-emitting layer meet, in plan view, an end portion of the second optical distance adjustment layer is disposed between the second relay layer and a second light-emitting region where the second pixel electrode and the light-emitting layer meet.

7. The electro-optical device according to claim 3, wherein in plan view, an end portion of the first optical distance adjustment layer is disposed between the first relay layer and a first light-emitting region where the first pixel electrode and the light-emitting layer meet, in plan view, an end portion of the second optical distance adjustment layer is disposed between the second relay layer and a second light-emitting region where the second pixel electrode and the light-emitting layer meet.

8. The electro-optical device of claim 2, wherein, The electro-optical device further has: a third reflective layer disposed apart from the electrode by a third optical distance shorter than the second optical distance; a third pixel electrode disposed between the electrode and the third reflective layer; and a third relay layer provided between the third pixel electrode and the third reflective layer to electrically connect between the third pixel electrode and the third reflective layer, a distance between the first reflective layer and the electrode in a region provided with the first relay layer is equal to a distance between the second reflective layer and the electrode in a region provided with the second relay layer, and a distance between the third reflective layer and the electrode in a region provided with the third relay layer.

9. The electro-optical device of claim 3, wherein, The electro-optical device further has: a third reflective layer provided apart from the electrode by a third optical distance shorter than the second optical distance; a third pixel electrode provided between the electrode and the third reflective layer; and a third relay layer provided between the third pixel electrode and the third reflective layer to electrically connect between the third pixel electrode and the third reflective layer, a distance between the first reflective layer and the electrode in a region provided with the first relay layer is equal to a distance between the second reflective layer and the electrode in a region provided with the second relay layer, and a distance between the third reflective layer and the electrode in a region provided with the third relay layer.

10. The electro-optical device of claim 6, wherein, The electro-optical device further has: a third reflective layer provided apart from the electrode by a third optical distance shorter than the second optical distance; a third pixel electrode provided between the electrode and the third reflective layer; and a third relay layer provided between the third pixel electrode and the third reflective layer to electrically connect between the third pixel electrode and the third reflective layer, a distance between the first reflective layer and the electrode in a region provided with the first relay layer is equal to a distance between the second reflective layer and the electrode in a region provided with the second relay layer, and a distance between the third reflective layer and the electrode in a region provided with the third relay layer.

11. The electro-optical device according to claim 1, wherein the first optical distance adjustment layer is an insulating layer containing silicon oxide.

12. The electro-optical device according to claim 1, wherein the first optical distance adjustment layer is a transparent conductive layer containing the same material as the first pixel electrode.

13. An electronic device, comprising: an electronic device including the electro-optical device according to claim 1.

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