Image sensor using avalanche diodes and shared output circuits

By employing N-type or P-type transistors in the quenching and readout circuit design of the single-photon avalanche diode image sensor, the problems of minimum pixel unit limitation and reduced fill factor are solved, realizing an image sensor with low pixel size limitation and high fill factor, which can effectively detect extremely weak light and high frequency signals.

CN114915738BActive Publication Date: 2025-01-14PIXART IMAGING INC
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Patent Information

Application Number
CN202111445695.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2021-02-10
Filing Date
2021-11-15
Publication Date
2025-01-14
Estimated Expiration
2041-11-15

AI Technical Summary

Technical Problem

In the existing technology, single-photon avalanche diodes have the problems of minimum pixel unit limitation and reduced fill factor in pixel circuits, making it difficult to achieve low pixel size limitation and high fill factor.

Method used

The quenching and readout circuit design uses only N-type or P-type transistors in each pixel circuit. By having only a single negative well area in each pixel and configuring the pull-back circuit outside each pixel circuit, the minimum pixel unit limitation and fill factor reduction are avoided.

Benefits of technology

A single-photon avalanche diode image sensor with low pixel size limitation and high fill factor has been developed, which can effectively detect extremely weak light and high frequency signals, thus improving the performance of the image sensor.

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Abstract

An image sensor using an avalanche diode comprises a plurality of pixel circuits arranged in an array, a plurality of pull-back circuits, a plurality of output circuits and a global current source circuit. Each of the plurality of pixel circuits comprises a single photon avalanche diode and a P-type or N-type selection switch transistor. Each of the plurality of pull-back circuits is configured corresponding to a column of pixel circuits. The global current source circuit is used to form a current mirror with each of the plurality of pull-back circuits. Each of the plurality of output circuits is shared by at least two pixel circuits.
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Citation Information

Patent Citations

  • Quenching reset circuit for single photon avalanche diode detector

    CN106712752A

  • Image sensor employing avalanche diode

    CN111491116A