Infrared detector pixel device and manufacturing method thereof

Abstract

The embodiment of the present application discloses an infrared detector pixel device and a method for manufacturing the same. The infrared detector pixel device includes: a first-layer bridge and a second-layer bridge connected in layers from bottom to top, wherein the first-layer bridge includes a first-layer bridge deck and two bridge arms, the bridge arms include a connecting mechanism, and the connecting mechanisms include gaps, and the connecting mechanism is used to connect the components supporting the first-layer bridge deck; the second-layer bridge includes a second-layer bridge deck, and a first ventilation group and a second ventilation group are arranged on the end surface of the second-layer bridge deck. The infrared detector pixel device of the embodiment of the present application ensures the efficient release of the sacrificial material PI through a targeted bridge deck design, while also reducing the waste of openings, increasing heat capacity, and improving detector performance.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of semiconductor and sensor technology, and in particular to an infrared detector pixel device and a method for manufacturing the same. Background Art

[0002] With the rapid advancement of infrared technology and the continuous decline in product costs, the market demand for infrared equipment and related products continues to grow, and infrared detectors are the core of the infrared industry chain.

[0003] An infrared detector is a device that absorbs external infrared rays and converts infrared radiation signals into electrical signals for output. Thermal conductivity and thermal capacity are two important parameters that characterize the thermal performance of infrared detectors. The higher the thermal capacity, the lower the thermal conductivity, and the better the thermal performance of the detector. In order to ensure that the detector has good performance, an island bridge structure is generally used in the processing process to reduce thermal conductivity. Since polyimide (PI), a sacrificial layer material, can conduct heat, sufficient heat must be released for the infrared detector to recognize infrared signals.

[0004] The conventional double-layer island bridge structure, including the first-layer bridge and the second-layer bridge connected from bottom to top, has a large number of openings on the second-layer bridge deck to ensure the release of PI as the base material, but this reduces the area of ​​the bridge deck, and thus cannot ensure a sufficiently large infrared absorption area, resulting in a low heat capacity of the bridge deck. It can be seen that the conventional double-layer island bridge structure cannot be compatible with the problem of efficient PI release and maintaining a high bridge deck area. Summary of the invention

[0005] The embodiment of the present application provides an infrared detector pixel device and a manufacturing method thereof, which can solve the problem of difficulty in releasing the second layer PI of the conventional double-layer island bridge structure of the infrared detector, while ensuring a larger bridge surface absorption area for infrared under the premise of optimizing the release problem, and compared with the conventional double-layer island bridge structure, the detector has a good improvement effect in terms of thermal capacity, response rate, thermal sensitivity (Thermal Sensitivity, NETD) and other performance.

[0006] In order to solve the above technical problems, the technical solution of the present invention is as follows:

[0007] A first aspect of an embodiment of the present application provides an infrared detector pixel device, comprising: a first layer bridge and a second layer bridge connected in a bottom-up manner, wherein:

[0008] The first-layer bridge comprises a first-layer bridge deck and two bridge arms, the two bridge arms are symmetrically arranged based on the center of the first-layer bridge deck, each of the bridge arms comprises a connecting mechanism, a gap is included between the connecting mechanisms, and the connecting mechanisms are used to connect components supporting the first-layer bridge deck;

[0009] The second-layer bridge comprises a second-layer bridge deck, a first ventilation group and a second ventilation group are arranged on an end surface of the second-layer bridge deck, and the second ventilation group is aligned with the gap in a direction perpendicular to the end surface of the second-layer bridge deck;

[0010] The length of the second bridge deck is less than the target length of the first bridge deck, and the target length is twice the shortest distance from the outermost side of each bridge arm corresponding to one side of the first bridge deck to the center of the first bridge deck;

[0011] The width of the second-layer bridge deck is smaller than the target width of the first-layer bridge deck, where the target width refers to the length of a portion of each bridge arm corresponding to an edge of the first-layer bridge deck.

[0012] In some optional implementations, the shape of the first bridge deck and the shape of the second bridge deck include: square, circle, ellipse and pentagon.

[0013] In some optional embodiments, the material of the first bridge deck layer, the material of the bridge arm, and the material of the second bridge deck layer are composite materials formed by stacking multiple membrane layers.

[0014] In some optional embodiments, the composite material includes at least two of the following materials: a high-performance heat absorbing material, a heat-sensitive material, and amorphous silicon.

[0015] In some optional embodiments, the first ventilation group includes at least one ventilation opening, and the at least one ventilation opening is evenly distributed based on a center point of the end surface of the second layer of the bridge deck.

[0016] In some optional implementations, the shape of any vent in the first vent group includes: circle, square, star, pentagon and hexagon.

[0017] A second aspect of an embodiment of the present application provides a method for manufacturing an infrared detector pixel device, the manufacturing method comprising:

[0018] Laying a PI film on the surface of the wafer and opening holes in the PI film;

[0019] A first-layer bridge deck and two bridge arms are fabricated on the PI film to obtain a first-layer bridge, wherein the two bridge arms are symmetrically arranged based on the center of the first-layer bridge deck, each of the bridge arms comprises a connecting mechanism, and a gap is provided between the connecting mechanisms, and the connecting mechanism is used to connect components supporting the first-layer bridge deck;

[0020] Laying a PI film on the upper end surface of the first bridge deck and opening holes in the PI film;

[0021] A second connecting mechanism is fabricated on the PI film on the upper end surface of the first bridge deck, wherein the second connecting mechanism is used to connect the first bridge deck and the second bridge deck;

[0022] A second layer of bridge deck is made on the PI film on the upper end surface of the first layer of bridge deck, and a first ventilation group and a second ventilation group are arranged on the end surface of the second layer of bridge deck, and the second ventilation group is aligned with the gap in a direction perpendicular to the end surface of the second layer of bridge deck; and the length of the second layer of bridge deck is less than the target length of the first layer of bridge, and the target length is twice the shortest distance from the outermost side of each bridge arm corresponding to an edge of the first layer of bridge deck to the center of the first layer of bridge deck; the width of the second layer of bridge deck is less than the target width of the first layer of bridge, and the target width refers to the length of the bridge arm corresponding to an edge of the first layer of bridge deck.

[0023] In some optional embodiments, the method of laying the PI film includes any one of the following: a coating method, a dipping method, and a salivation method.

[0024] In some optional embodiments, the method for manufacturing the first layer of the bridge deck, the method for manufacturing the components supporting the first layer of the bridge deck, the method for manufacturing the second connecting mechanism, the method for manufacturing the bridge arm, and the method for manufacturing the second layer of the bridge deck include the following steps: a cleaning process, a photolithography process, an etching process, a deposition process, and a degumming process.

[0025] In some optional implementations, the deposition process includes any one of the following: a chemical vapor deposition (CVD) process and a physical vapor deposition (PVD) process.

[0026] In order to solve the problem of difficult release of the conventional double-layer island bridge structure PI in the infrared detector, and to ensure a larger bridge deck absorption area while optimizing the release problem, the embodiment of the present application provides an infrared detector pixel device and a manufacturing method thereof, the infrared detector pixel device includes: a first-layer bridge and a second-layer bridge connected in layers from bottom to top, wherein the first-layer bridge includes a first-layer bridge deck and two bridge arms, the two bridge arms are symmetrically arranged based on the center of the first-layer bridge deck, each bridge arm includes a connecting mechanism, and the connecting mechanisms include a gap, and the connecting mechanism is used to connect the components supporting the first-layer bridge deck; the second-layer bridge includes a second-layer bridge deck, and the first ventilation group and the second ventilation group are arranged on the end surface of the second-layer bridge deck. In this solution, the length of the second-layer bridge deck is less than the target length of the first-layer bridge, and the target length is twice the shortest distance from the outermost side of each bridge arm corresponding to one edge of the first-layer bridge deck to the center of the first-layer bridge deck; the width of the second-layer bridge deck is less than the target width of the first-layer bridge, and the target width refers to the length of each bridge arm corresponding to one edge of the first-layer bridge deck. By designing the size of the second-layer bridge deck in this way, the redundancy of the alignment window in the process can be increased to ensure the maximum airflow during the release process. In addition, in the infrared detector pixel device and its manufacturing method disclosed in the present invention, the gap in the connection mechanism between the second ventilation group and the above-mentioned bridge arm is aligned in a direction perpendicular to the end face of the second-layer bridge deck. By opening holes in the second-layer bridge deck in this targeted manner, it is possible to reduce the waste of opening holes, better release PI, and reduce PI residue. While optimizing the release of PI, a larger bridge surface is guaranteed to absorb infrared, which improves the thermal capacity compared to the conventional double-layer island bridge structure, and also has a good effect on improving the response rate and NETD. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solution of the present application, the drawings required for use in the embodiments are briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0028] Figure 1 A schematic diagram of an infrared detector pixel device provided in an embodiment of the present application;

[0029] Figure 2 Schematic diagram of the first-layer bridge and the second-layer bridge provided in the embodiment of the present application;

[0030] Figure 3 A top view of an infrared detector pixel device provided in an embodiment of the present application;

[0031] Figure 4 A side view of an infrared detector pixel device provided in an embodiment of the present application;

[0032] Figure 5A flowchart of a method for manufacturing an infrared detector pixel device provided in an embodiment of the present application.

[0033] Figures 1 to 4 The components indicated by the numbers are: 1 first bridge deck, 2 bridge arm, 3 second bridge deck, 5 vent of the first ventilation group, 4 vent of the second ventilation group, 6 second connecting mechanism. DETAILED DESCRIPTION

[0034] The technical solution of the embodiment of the present application will be described below in conjunction with the drawings in the embodiment of the present application.

[0035] The terms used in the following embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to be used as limitations to the present application. As used in the specification and the appended claims of the present application, the singular expressions "one", "a kind of", "described", "above", "the" and "this" are intended to also include plural expressions, unless there is a clear contrary indication in the context. It should also be understood that although the terms first, second, etc. may be used to describe a certain class of objects in the following embodiments, the objects should not be limited to these terms. These terms are only used to distinguish the specific objects of this class of objects. The same is true for other classes of objects that may be described using the terms first, second, etc. in the following embodiments, which will not be repeated here.

[0036] like Figure 1 , Figure 2 , Figure 3 and Figure 4 As shown, an embodiment of the present invention proposes an infrared detector pixel device, comprising: a first-layer bridge and a second-layer bridge connected in layers from bottom to top, wherein the first-layer bridge comprises a first-layer bridge deck 1 and two bridge arms 2, the two bridge arms are symmetrically arranged based on the center of the first-layer bridge deck, each bridge arm 2 comprises a connecting mechanism, and a gap is included between the connecting mechanisms, and the connecting mechanism is used to connect the components supporting the first-layer bridge deck; the second-layer bridge comprises a second-layer bridge deck 3, and a first ventilation group and a second ventilation group are arranged on the end surface of the second-layer bridge deck 3, and the second ventilation group is aligned with the gap in a direction perpendicular to the end surface of the second-layer bridge deck; the length of the second-layer bridge deck 3 is less than the target length of the first-layer bridge, and the target length refers to twice the shortest distance from the outermost side of each bridge arm 2 corresponding to an edge of the first-layer bridge deck 1 to the center of the first-layer bridge deck 1; the width of the second-layer bridge deck 3 is less than the target width of the first-layer bridge, and the target width refers to the length of the part of each bridge arm corresponding to an edge of the first-layer bridge deck.

[0037] It can be seen that by adopting this embodiment, an infrared detector pixel device is provided, wherein the length of the second-layer bridge deck is less than twice the shortest distance from the outermost part of each bridge arm corresponding to one edge of the first-layer bridge deck to the center of the first-layer bridge deck, and the width of the second-layer bridge deck is less than the length of each bridge arm corresponding to one edge of the first-layer bridge deck. By designing the size of the second-layer bridge deck in this way, the redundancy of the alignment window in the process can be increased to ensure the maximum airflow during the release process. In addition, the gap in the connection mechanism between the second ventilation group and the bridge arm is aligned in a direction perpendicular to the end face of the second-layer bridge deck. By designing the openings on the second-layer bridge deck in this targeted manner, it is possible to reduce the waste of openings, better release PI, and reduce PI residue. While optimizing the release of PI, a larger bridge surface absorption area for infrared is ensured, which improves the thermal capacity compared to the conventional double-layer island bridge structure, and also has a good effect on improving the response rate and NETD.

[0038] In some embodiments of the present invention, the shapes of the first bridge deck 1 and the second bridge deck 3 include: square, circle, ellipse and pentagon.

[0039] In this embodiment, the shape of the first bridge deck 1 and the shape of the second bridge deck 3 are rectangular. Of course, the shape of the first bridge deck 1 and the shape of the second bridge deck 3 are not limited to the rectangle in this embodiment, and can be other shapes. For example, the shape of the first bridge deck 1 and the shape of the second bridge deck 3 can be circular, but at the same time, it is necessary to ensure that the radius of the second bridge deck 3 is smaller than the straight-line distance from the outermost side of the bridge arm 2 to the center of the first bridge deck 1.

[0040] In some embodiments of the present invention, the material of the first bridge deck, the material of the bridge arm and the material of the second bridge deck are composite materials formed by stacking a plurality of membrane layers.

[0041] In some embodiments of the present invention, the composite material includes at least two of the following materials: a high-performance heat absorbing material, a heat-sensitive material, and amorphous silicon.

[0042] In this embodiment, the first bridge deck 1, the bridge arm 2 and the second bridge deck 3 are all stacked by multiple membrane layers, and the membrane layers are composited by two materials: high-performance heat-absorbing material silicon nitride and heat-sensitive material vanadium oxide. Of course, the membrane layers can also be composited by other high-performance heat-absorbing materials, other heat-sensitive materials and amorphous silicon.

[0043] In some embodiments of the present invention, the first ventilation group includes at least one ventilation opening, and the at least one ventilation opening is evenly distributed based on the center point of the end surface of the second layer bridge deck.

[0044] In this embodiment, there are 9 vents 5 of the first ventilation group on the second deck 3. The vents 5 of the first ventilation group are evenly distributed on the end face of the second deck 3 based on the center point of the end face. The number of vents 5 of the first ventilation group is at least 1, and the specific number can be customized according to the size of the end face area of ​​the second deck 3. Too many vents will lead to too many openings on the second deck, too small infrared absorption area, and too low thermal capacity; too few vents may cause insufficient release of PI, residual PI, and increase the thermal conductivity of the infrared detector. PI can conduct heat and take away part of the heat of the infrared detector, resulting in less heat conducted from the bridge arm, and the heat is not enough for the infrared detector pixel device to recognize the infrared signal.

[0045] In some embodiments of the present invention, the shape of any vent in the first vent group includes: circle, square, star, pentagon and hexagon. In this embodiment, the shape of the vent 5 of the first vent group is circle, of course, the vent 5 of the first vent group can also be other shapes.

[0046] In summary, in the infrared detector pixel device of the structure described in the embodiment of the present application, the length of the second bridge deck is less than twice the shortest distance from the outermost part of each bridge arm corresponding to one edge of the first bridge deck to the center of the first bridge deck, and the width of the second bridge deck is less than the length of each bridge arm corresponding to one edge of the first bridge deck. By designing the size of the second bridge deck in this way, the redundancy of the alignment window in the process can be increased to ensure the maximum airflow during the release process. In addition, the gap in the connection mechanism between the second ventilation group and the bridge arm is aligned in a direction perpendicular to the end face of the second bridge deck. By designing the openings on the second bridge deck in this targeted manner, it is possible to reduce the waste of openings, better release PI, and reduce PI residue. While optimizing the problem of releasing PI, a larger bridge surface is guaranteed to absorb infrared, which improves the thermal capacity compared to the conventional double-layer island bridge structure, and also has a good effect on improving the response rate and NETD.

[0047] correspond Figures 1 to 4 The infrared detector pixel device is shown in FIG. 1 , and the embodiment of the present invention also provides a corresponding manufacturing method. The manufacturing method of the corresponding infrared detector pixel device is introduced below in conjunction with the embodiment.

[0048] In some embodiments, the present invention provides an exemplary method 100 for manufacturing an infrared detector pixel device, and the manufacturing method 100 includes the following steps:

[0049] Laying a polyimide PI film on the surface of the wafer and opening holes in the PI film;

[0050] A first-layer bridge deck and two bridge arms are fabricated on the PI film to obtain a first-layer bridge, wherein the two bridge arms are symmetrically arranged based on the center of the first-layer bridge deck, each of the bridge arms comprises a connecting mechanism, and a gap is provided between the connecting mechanisms, and the connecting mechanism is used to connect components supporting the first-layer bridge deck;

[0051] Laying a PI film on the upper end surface of the first bridge deck and opening holes in the PI film;

[0052] A second connecting mechanism is fabricated on the PI film on the upper end surface of the first bridge deck, wherein the second connecting mechanism is used to connect the first bridge deck and the second bridge deck;

[0053] A second layer of bridge deck is made on the PI film on the upper end surface of the first layer of bridge deck, and a first ventilation group and a second ventilation group are arranged on the end surface of the second layer of bridge deck, and the second ventilation group is aligned with the gap in a direction perpendicular to the end surface of the second layer of bridge deck; and the length of the second layer of bridge deck is less than the target length of the first layer of bridge, and the target length is twice the shortest distance from the outermost side of each bridge arm corresponding to an edge of the first layer of bridge deck to the center of the first layer of bridge deck; the width of the second layer of bridge deck is less than the target width of the first layer of bridge, and the target width refers to the length of each bridge arm corresponding to an edge of the first layer of bridge deck.

[0054] Optionally, the method of laying the PI film in the manufacturing method 100 includes any one of the following: a coating method, a dipping method, and a salivation method.

[0055] Optionally, the method for manufacturing the first layer of the bridge deck, the method for manufacturing the components supporting the first layer of the bridge deck, the method for manufacturing the second connecting mechanism, the method for manufacturing the bridge arm, and the method for manufacturing the second layer of the bridge deck in the manufacturing method 100 include the following steps: a cleaning process, a photolithography process, an etching process, a deposition process, and a degumming process.

[0056] Optionally, the deposition process in the manufacturing method 100 includes any one of the following: a chemical vapor deposition CVD process and a physical vapor deposition PVD process.

[0057] For example, Figure 5A flow chart of a method for manufacturing an infrared detector pixel device provided by an embodiment of the present invention is shown. First, a layer of PI film is laid on the surface of a wafer as a sacrificial layer by a glue coating method, and holes are opened in the PI film by an etching method. Based on the holes in the PI, components supporting the first layer of the bridge deck are obtained by chemical vapor deposition or physical vapor deposition, and then the first layer of the bridge deck and two bridge arms are obtained by etching and deposition. The positions of the two bridge arms are symmetrical based on the center of the first layer of the bridge deck to ensure the overall stability of the infrared detector pixel device. Each bridge arm includes a connecting mechanism, which is used to connect the components supporting the first layer of the bridge deck. Etch the connection mechanism to leave a gap, then apply glue on the upper end of the first bridge deck to obtain another layer of PI film, make holes in the PI film on the upper end of the first bridge deck by etching and deposit to make a second connection mechanism for connecting the first bridge deck and the second bridge deck, finally, etch and deposit on the PI film on the upper end of the first bridge deck to obtain the second bridge deck, the second bridge deck opening is specially designed, and the second bridge deck is etched to obtain the first ventilation group and the second ventilation group. The first ventilation group contains 9 ventilation ports, and the second ventilation group is aligned with the gap in the connection mechanism in a direction perpendicular to the end of the second bridge deck. Finally, the following is obtained Figure 1 The infrared detector pixel device shown.

[0058] The manufacturing method 100 provided in the present disclosure is only a schematic description and does not limit the technical solution of the embodiment of the present invention. The specific implementation of the technical solution of the embodiment of the present invention includes but is not limited to the above-mentioned embodiment. In the actual implementation scenario, other specific implementations can also be adopted according to the structure of the metasurface optical device disclosed in the present disclosure, which will not be repeated here.

[0059] In summary, in the above-mentioned embodiment of the present invention, an infrared detector pixel device and a manufacturing method thereof are provided, wherein the length of the second-layer bridge deck is less than twice the shortest distance from the outermost part of each bridge arm corresponding to one edge of the first-layer bridge deck to the center of the first-layer bridge deck, and the width of the second-layer bridge deck is less than the length of each bridge arm corresponding to one edge of the first-layer bridge deck. By designing the size of the second-layer bridge deck in this way, the redundancy of the alignment window in the process can be increased to ensure the maximum airflow during the release process. In addition, the gap in the connection mechanism between the second ventilation group and the bridge arm is aligned in a direction perpendicular to the end face of the second-layer bridge deck. By designing the openings on the second-layer bridge deck in this targeted manner, it is possible to reduce the waste of openings, better release PI, and reduce PI residue. While optimizing the release of PI, a larger bridge surface is guaranteed to absorb infrared, and the heat capacity is increased compared to the conventional double-layer island bridge structure, and the response rate and NETD are also well improved.

[0060] Although the optional embodiments of the present application have been described, those skilled in the art, once informed of the basic creative concept, may make additional changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiment and all changes and modifications falling within the scope of the present application.

[0061] The specific implementation methods described above further illustrate the purpose, technical solutions and beneficial effects of the present application in detail. It should be understood that the above description is only the specific implementation method of the present application and is not intended to limit the scope of protection of the present application. Any modifications, equivalent substitutions, improvements, etc. made on the basis of the technical solutions of the present application should be included in the scope of protection of the present invention.

Claims

1. An infrared detector pixel device, characterized in that: The device comprises: a first-layer bridge and a second-layer bridge connected in a bottom-up manner, wherein: The first-layer bridge comprises a first-layer bridge deck and two bridge arms, the two bridge arms are symmetrically arranged based on the center of the first-layer bridge deck, each of the bridge arms comprises a connecting mechanism, a gap is included between the connecting mechanisms, and the connecting mechanism is used to connect the components supporting the first-layer bridge deck; the second-layer bridge comprises a second-layer bridge deck, a first ventilation group and a second ventilation group are arranged on the end surface of the second-layer bridge deck, and the second ventilation group is aligned with the gap in a direction perpendicular to the end surface of the second-layer bridge deck; The length of the second bridge deck is less than the target length of the first bridge deck, and the target length is twice the shortest distance from the outermost side of each bridge arm corresponding to one side of the first bridge deck to the center of the first bridge deck; The width of the second bridge deck is smaller than the target width of the first bridge deck, where the target width refers to the length of a portion of each bridge arm corresponding to an edge of the first bridge deck; The first ventilation group includes at least one ventilation opening, and the at least one ventilation opening is evenly distributed based on the center point of the end surface of the second-layer bridge deck.

2. The infrared detector pixel device according to claim 1, characterized in that: The shapes of the first bridge deck and the second bridge deck include: square, circle, ellipse and pentagon.

3. The infrared detector pixel device according to claim 1, characterized in that: The material of the first bridge deck, the material of the bridge arm and the material of the second bridge deck are composite materials formed by stacking a plurality of membrane layers.

4. The infrared detector pixel device according to claim 3, characterized in that: The composite material comprises at least two of the following materials: a high-performance heat absorbing material, a heat-sensitive material and amorphous silicon.

5. The infrared detector pixel device according to claim 1, characterized in that: The shape of any vent in the first vent group includes: circular, square, star, pentagon and hexagon.

6. A method for manufacturing an infrared detector pixel device, characterized in that: The production method comprises: Laying a polyimide PI film on the surface of the wafer and opening holes in the PI film; A first-layer bridge deck and two bridge arms are fabricated on the PI film to obtain a first-layer bridge, wherein the two bridge arms are symmetrically arranged based on the center of the first-layer bridge deck, each of the bridge arms comprises a connecting mechanism, and a gap is provided between the connecting mechanisms, and the connecting mechanism is used to connect components supporting the first-layer bridge deck; Laying a PI film on the upper end surface of the first bridge deck and opening holes in the PI film; A second connecting mechanism is fabricated on the PI film on the upper end surface of the first bridge deck, wherein the second connecting mechanism is used to connect the first bridge deck and the second bridge deck; A second layer of bridge deck is made on the PI film on the end surface of the first layer of bridge deck, and a first ventilation group and a second ventilation group are arranged on the end surface of the second layer of bridge deck, and the second ventilation group is aligned with the gap in a direction perpendicular to the end surface of the second layer of bridge deck; and the length of the second layer of bridge deck is less than the target length of the first layer of bridge, and the target length is twice the shortest distance from the outermost side of each bridge arm corresponding to an edge of the first layer of bridge deck to the center of the first layer of bridge deck; the width of the second layer of bridge deck is less than the target width of the first layer of bridge, and the target width refers to the length of each bridge arm corresponding to an edge of the first layer of bridge deck; the first ventilation group includes at least one vent, and the at least one vent is evenly distributed based on the center point of the end surface of the second layer of bridge deck.

7. The method for manufacturing an infrared detector pixel device according to claim 6, characterized in that: The method for laying the PI film includes any one of the following: a glue coating method, a dipping method and a salivation method.

8. The method for manufacturing an infrared detector pixel device according to claim 6, characterized in that: The method for making the first bridge deck, the method for making the components supporting the first bridge deck, the method for making the second connecting mechanism, the method for making the bridge arm and the method for making the second bridge deck include the following steps: cleaning process, photolithography process, etching process, deposition process and degumming process.

9. The method for manufacturing an infrared detector pixel device according to claim 8, characterized in that: The deposition process includes any one of the following: a chemical vapor deposition (CVD) process and a physical vapor deposition (PVD) process.

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