Light emitting diode and display device including the same

Abstract

Provided are a light emitting diode and a display device including the light emitting diode. The light emitting diode includes: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; and an active layer disposed between the first semiconductor layer and the second semiconductor layer, wherein a length measured in a first direction is shorter than a width measured in a second direction perpendicular to the first direction, the first direction being a direction along which the first semiconductor layer, the active layer, and the second semiconductor layer are arranged.

Description

Technical Field

[0001] The present invention relates to a light emitting element and a display device including the light emitting element. Background Art

[0002] As multimedia technology develops, the importance of display devices has steadily increased. In response to this, various types of display devices, such as organic light emitting displays, liquid crystal displays (LCDs), and the like, have been used.

[0003] The display device is a device for displaying an image, and includes a display panel, such as an organic light emitting display panel or a liquid crystal display panel. The light emitting display panel may include a light emitting element, for example, a light emitting diode (LED), and examples of the light emitting diode include an organic light emitting diode (OLED) using an organic material as a fluorescent material and an inorganic light emitting diode using an inorganic material as a fluorescent material. Summary of the invention

[0004] Technical issues

[0005] Aspects of the present disclosure provide a light emitting element having a width greater than a height and a display device including the light emitting element.

[0006] Aspects of the present disclosure also provide a display device including a light emitting element disposed between electrodes vertically facing each other.

[0007] It should be noted that the disclosed aspects are not limited thereto, and other aspects not mentioned here will be apparent to those of ordinary skill in the art from the following description.

[0008] Technical Solution

[0009] According to a disclosed embodiment, a light-emitting element includes: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; and an active layer arranged between the first semiconductor layer and the second semiconductor layer, wherein a length of the light-emitting element measured in a first direction is smaller than a width of the light-emitting element measured in a second direction perpendicular to the first direction, and the first direction is the direction along which the first semiconductor layer, the active layer and the second semiconductor layer are arranged.

[0010] The light emitting elements may have an aspect ratio having a value comprised between 0.1 and 1.0.

[0011] The light emitting element may further include an insulating film provided to surround at least an outer surface of the active layer.

[0012] The light emitting element may further include an electrode layer provided on one surface of at least one of the first semiconductor layer and the second semiconductor layer.

[0013] The insulating film may be disposed to surround an outer surface of the electrode layer while exposing at least a portion of the outer surface of the electrode layer.

[0014] The first semiconductor layer may include a main body portion and an extension portion, a width of the extension portion measured in the second direction being greater than a width of the main body portion measured in the second direction, and the active layer may be disposed on the main body portion.

[0015] The insulating film may be provided to surround an outer surface of the body portion while leaving an upper surface of the extension portion exposed.

[0016] The light emitting element may have a shape in which a side surface thereof is inclined such that a width of the first semiconductor layer measured in the second direction is larger than a width of the second semiconductor layer measured in the second direction.

[0017] The light emitting element may further include: a third semiconductor layer disposed between the first semiconductor layer and the active layer; a fourth semiconductor layer disposed between the active layer and the second semiconductor layer; and a fifth semiconductor layer disposed between the fourth semiconductor layer and the second semiconductor layer.

[0018] According to the disclosed embodiment, the display device includes: a first substrate; a first electrode, arranged on the first substrate; a second electrode, arranged on the first electrode; a light-emitting element, arranged between the first electrode and the second electrode, and including one end electrically connected to the first electrode and the other end electrically connected to the second electrode; and a first insulating layer, arranged between the first electrode and the second electrode to surround the outer surface of the light-emitting element, wherein the light-emitting element includes: a first semiconductor layer, doped with a first polarity; a second semiconductor layer, doped with a second polarity different from the first polarity; and an active layer, arranged between the first semiconductor layer and the second semiconductor layer, wherein the length of the light-emitting element measured in the first direction is smaller than the width of the light-emitting element measured in the second direction perpendicular to the first direction, and the first direction is the direction along which the first semiconductor layer, the active layer and the second semiconductor layer are arranged.

[0019] The one end of the light emitting element may be in direct contact with the first electrode, and the other end of the light emitting element may be in direct contact with the second electrode.

[0020] At least a partial region of the other end of the light emitting element may protrude from the upper surface of the first insulating layer, and the second electrode may be provided to cover the protruding other end.

[0021] A width of the second electrode measured in the second direction may be greater than a width of the first electrode measured in the second direction.

[0022] A width of the second electrode measured in the second direction may be smaller than a width of the light emitting element measured in the second direction.

[0023] The display device may further include: a first contact electrode arranged on the first electrode; and a second contact electrode arranged between the first insulating layer and the second electrode, wherein one end of the light-emitting element may be in direct contact with the first contact electrode, and the other end of the light-emitting element may be in direct contact with the second contact electrode.

[0024] The first electrode may include a first electrode base layer and a first electrode upper layer disposed on the first electrode base layer, and the first electrode base layer may reflect light emitted from the light emitting element.

[0025] The light emitting element may include a first type light emitting element in which the first semiconductor layer is electrically connected to the first electrode and a second type light emitting element in which the first semiconductor layer is electrically connected to the second electrode.

[0026] The display device may further include a second insulating layer disposed to cover the first insulating layer and the second electrode.

[0027] At least one of the first insulating layer and the second insulating layer may further include a scatterer.

[0028] The first electrode may include a groove portion formed by recessing a portion of an upper surface thereof, and the light emitting element may be disposed in the groove portion.

[0029] The first semiconductor layer of the light emitting element may include a main body and an extension, the active layer is disposed on the main body, the width of the extension measured in the second direction is greater than the width of the main body measured in the second direction, and the width of the extension may be smaller than the width of the groove.

[0030] The display device may further include: a third contact electrode contacting one side of the extension portion of the light emitting element and the first electrode; and a fourth contact electrode contacting the other side of the extension portion and the first electrode.

[0031] The display device may further include a third insulating layer disposed on the first electrode and including an opening configured to expose a portion of an upper surface of the first electrode, wherein the light emitting element may be disposed in the opening.

[0032] According to a disclosed embodiment, a display device includes: a first substrate including a plurality of pixels; a first electrode disposed on the first substrate and in the plurality of pixels; a second electrode disposed so that at least a portion of the second electrode overlaps the first electrode; and a light-emitting element disposed between the first electrode and the second electrode and including one end electrically connected to the first electrode and another end electrically connected to the second electrode, wherein the light-emitting element includes: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; and an active layer disposed between the first semiconductor layer and the second semiconductor layer, wherein a width of the light-emitting element is greater than a separation distance between the first electrode and the second electrode.

[0033] The plurality of pixels may include a first pixel and a second pixel, the first electrode may be disposed in the first pixel, and the light emitting element may include a first light emitting element disposed between the first electrode and the second electrode.

[0034] The second electrode may be disposed in the first pixel, and a width of the second electrode measured in one direction may be greater than a width of the first electrode measured in the one direction.

[0035] The display device may further include a third electrode, which is arranged on the first substrate of the second pixel, wherein the second electrode may be arranged so that at least a portion of the second electrode overlaps with the third electrode arranged in the second pixel, and the light-emitting element may further include a second light-emitting element arranged between the second electrode and the third electrode.

[0036] The display device may further include a bank layer disposed on the first substrate to surround each of the first pixel and the second pixel.

[0037] The first electrode may include a groove portion formed by recessing a portion of an upper surface of the first electrode to extend in one direction, and the light emitting element may be provided in the groove portion and arranged in the one direction.

[0038] The second electrode may extend in the one direction and be disposed to overlap the groove portion of the first electrode.

[0039] Details of other embodiments are included in the detailed description and accompanying drawings.

[0040] Beneficial Effects

[0041] The light emitting element according to one embodiment may have a width greater than a height in a direction in which a plurality of semiconductor layers are stacked. The light emitting element may include an active layer having a large area, and light emitting efficiency may be improved.

[0042] In addition, a display device according to an embodiment may include a light emitting element and electrodes spaced apart from each other in a height direction of the light emitting element. A light emitting element having a large width may contact each of the electrodes with a large area. In addition, the light emitting element may be arranged so that both ends of the light emitting element through which light is emitted face in an upward direction relative to a substrate on which the electrodes and the light emitting element are arranged, and light generated in an active layer of the light emitting element may be directly emitted in an upward direction relative to the substrate.

[0043] The effects according to the embodiments are not limited to the above-exemplified contents, and more various effects are included in the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 is a plan view of a display device according to an embodiment.

[0045] Figure 2 is a plan view showing a first pixel and a second pixel of a display device according to an embodiment.

[0046] Figure 3 It is along Figure 2 A cross-sectional view taken along line III-III'.

[0047] Figure 4 is a schematic diagram showing a light emitting element according to an embodiment.

[0048] Figure 5 is a cross-sectional view of a light emitting element according to an embodiment.

[0049] Figures 6 to 9 is a cross-sectional view showing a process of manufacturing a light emitting element according to an embodiment.

[0050] Figures 10 to 12 is a cross-sectional view illustrating a manufacturing process of a display device according to an embodiment.

[0051] Fig.13 is a cross-sectional view of a light emitting element according to another embodiment.

[0052] Fig.14 It is shown that Fig.13 A cross-sectional view of a portion of a display device having a light-emitting element.

[0053] Fig.15 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0054] Fig.16 is a cross-sectional view of a light emitting element according to still another embodiment.

[0055] Fig.17 It is shown that Fig.16A cross-sectional view of a portion of a display device having a light-emitting element.

[0056] Fig.18 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0057] Fig.19 is a plan view showing a first pixel and a second pixel of a display device according to still another embodiment.

[0058] Fig. 20 It is along Fig.19 A cross-sectional view taken along line IV-IV'.

[0059] Fig.21 is a plan view showing a first pixel and a second pixel of a display device according to still another embodiment.

[0060] Fig. 22 It is shown Fig.21 A cross-sectional view of a portion of a display device.

[0061] Fig.23 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0062] Fig.24 and Fig.25 1 and 2 are plan views each showing a first pixel and a second pixel of a display device according to still another embodiment.

[0063] Fig.26 and Fig. 27 are cross-sectional views each showing a portion of a display device according to still another embodiment.

[0064] Fig.28 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0065] Fig.29 is a plan view showing a first pixel and a second pixel of a display device according to still another embodiment.

[0066] Fig.30 is a cross-sectional view of a light emitting element according to still another embodiment.

[0067] Fig.31 is a plan view showing a first pixel and a second pixel of a display device according to still another embodiment.

[0068] Fig.32 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0069] Fig.33 is a plan view showing a first pixel and a second pixel of a display device according to still another embodiment.

[0070] Fig.34 It is along Fig.33 A cross-sectional view taken along line V-V'.

[0071] Fig.35 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0072] Fig.36 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0073] Fig.37 and Fig.38 1 and 2 are plan views each showing a first pixel and a second pixel of a display device according to still another embodiment.

[0074] Fig.39 and Fig.40 2 are cross-sectional views each showing a light emitting element according to still another embodiment.

[0075] Fig.41 and Fig.42 All are shown including Fig.39 A cross-sectional view of a portion of a display device having a light-emitting element.

[0076] Fig.43 is a plan view showing a first pixel and a second pixel of a display device according to still another embodiment.

[0077] Fig.44 It is along Fig.43 A cross-sectional view taken along line VI-VI'.

[0078] Fig.45 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0079] Fig.46 is a plan view showing a first pixel and a second pixel of a display device according to still another embodiment.

[0080] Fig.47 It is along Fig.46 A cross-sectional view taken along line VII-VII'.

[0081] Fig.48 It is shown Fig.46 A cross-sectional view of one operation of a manufacturing process of a display device. DETAILED DESCRIPTION

[0082] The invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. However, the invention may be implemented in different forms and should not be construed as limited to the embodiments set forth herein. Instead, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the invention to those skilled in the art.

[0083] It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Like reference numerals refer to like components throughout the specification.

[0084] It will be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, without departing from the teachings of the invention, the first element discussed below may be referred to as the second element. Similarly, the second element may also be referred to as the first element.

[0085] Hereinafter, embodiments will be described with reference to the accompanying drawings.

[0086] Figure 1 is a schematic plan view of a display device according to an embodiment.

[0087] Reference Figure 1 , the display device 10 displays a video or a still image. The display device 10 may refer to all electronic devices that provide a display screen. For example, the display device 10 may include a television, a notebook, a monitor, a billboard, an Internet of Things (IoT) device, a mobile phone, a smart phone, a tablet personal computer (PC), an electronic watch, a smart watch, a watch phone, a head-mounted display, a mobile communication terminal, an electronic organizer, an e-book reader, a portable multimedia player (PMP), a navigation device, a game console, a digital camera, a video camera, etc. that provide a display screen.

[0088] The display device 10 includes a display panel that provides a display screen. Examples of the display panel may include a light emitting diode (LED) display panel, an organic light emitting display panel, a quantum dot light emitting display panel, a plasma display panel, a field emission display panel, etc. Hereinafter, although an example in which an LED display panel is applied as an example of a display panel is described, the present invention is not limited thereto, and when the same technical spirit is applicable, it may be applied to other display panels.

[0089] The shape of the display device 10 may be modified in various ways. For example, the display device 10 may have a shape such as a rectangular shape with long horizontal sides, a rectangular shape with long vertical sides, a square shape, a quadrilateral shape with rounded corners (vertices), other polygonal shapes, a circular shape, etc. The shape of the display area DPA of the display device 10 may also be similar to the overall shape of the display device 10. Figure 1 , a display device 10 and a display area DPA having a rectangular shape with long horizontal sides are shown.

[0090] The display device 10 may include a display area DPA and a non-display area NDA. The display area DPA is an area where an image may be displayed, and the non-display area NDA is an area where an image is not displayed. The display area DPA may refer to an active area, and the non-display area NDA may refer to an inactive area. The display area DPA may generally occupy the center of the display device 10.

[0091] The display area DPA may include a plurality of pixels PX. The plurality of pixels PX may be arranged in a matrix form. In a plan view, the shape of each of the pixels PX may be a rectangular shape or a square shape, but the present invention is not limited thereto, and the shape may be a rhombus shape in which each side is inclined relative to one direction. The pixels PX may be arranged alternately in a stripe type or a PenTile type. In addition, each of the pixels PX may include one or more light emitting elements 300 that emit light in a specific wavelength range, thereby displaying a specific color.

[0092] The non-display area NDA may be disposed around the display area DPA. The non-display area NDA may completely or partially surround the display area DPA. The display area DPA has a rectangular shape, and the non-display area NDA may be disposed adjacent to four sides of the display area DPA. The non-display area NDA may form a frame of the display device 10.

[0093] Figure 2 is a plan view showing a first pixel and a second pixel of a display device according to an embodiment. Figure 3 It is along Figure 2 A cross-sectional view taken along line III-III'.

[0094] Reference Figure 2 , the display device 10 includes a plurality of pixels PXA and PXB, and each of the plurality of pixels PXA and PXB may include a plurality of sub-pixels PXn. For example, the first pixel PXA may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3, and the second pixel PXB may include a fourth sub-pixel PX4, a fifth sub-pixel PX5, and a sixth sub-pixel PX6. As an example, the first sub-pixel PX1 and the fourth sub-pixel PX4 may emit light of a first color, the second sub-pixel PX2 and the fifth sub-pixel PX5 may emit light of a second color, and the third sub-pixel PX3 and the sixth sub-pixel PX6 may emit light of a third color. The first color may be blue, the second color may be green, and the third color may be red. However, the present invention is not limited thereto, and the sub-pixels PXn may emit light having the same color. In addition, in Figure 2Although each of the pixels PXA and PXB is shown to include three sub-pixels PXn (n=1, 2, 3, or n=4, 5, 6), the present invention is not limited thereto, and each of the pixels PXA and PXB may include a larger number of sub-pixels PXn.

[0095] Each of the sub-pixels PXn of the display device 10 may include an area defined as a light emitting area EMA. The first sub-pixel PX1 may include a first light emitting area EMA1, the second sub-pixel PX2 may include a second light emitting area EMA2, and the third sub-pixel PX3 may include a third light emitting area EMA3. In addition, the fourth sub-pixel PX4 may include a fourth light emitting area EMA4, the fifth sub-pixel PX5 may include a fifth light emitting area EMA5, and the sixth sub-pixel PX6 may include a sixth light emitting area EMA6. The light emitting area EMA may be defined as an area in which the light emitting element 300 included in the display device 10 is disposed to emit light in a specific wavelength range. The light emitting element 300 includes an active layer 360 (see Figure 4 ), and the active layer 360 may emit light in a specific wavelength range without directivity. The light emitted from the active layer 360 of the light emitting element 300 may also be emitted in a direction toward the side surface of the light emitting element 300 including both ends of the light emitting element 300. The light emitting area EMA may include a region in which the light emitting element 300 is disposed, and may include a region adjacent to the light emitting element 300 and through which the light emitted from the light emitting element 300 is emitted.

[0096] The present invention is not limited thereto, and the light emitting area EMA may also include an area in which light emitted from the light emitting element 300 is reflected or refracted by another member to be emitted. A plurality of light emitting elements 300 may be provided in each sub-pixel PXn, and an area in which the light emitting element 300 is provided and an area adjacent to the area form the light emitting area EMA.

[0097] Although not shown in the drawings, each of the sub-pixels PXn of the display device 10 may include a non-luminous region defined as a region other than the luminous region EMA. The non-luminous region may be a region where the luminous element 300 is not disposed and where light emitted from the luminous element 300 does not reach and thus does not emit light.

[0098] The display device 10 according to one embodiment may include a circuit element layer CEL and a display element layer EML, and the display element layer EML may include a first electrode 210, a second electrode 220, and a light emitting element 300 disposed in each subpixel PXn. Both ends of the light emitting element 300 may be electrically connected to the first electrode 210 and the second electrode 220, respectively, and receive electrical signals from the first electrode 210 and the second electrode 220 to emit light of a specific wavelength range.

[0099] Reference Figure 2 and Figure 3 , the display device 10 may include a circuit element layer CEL including a first substrate 101 and a display element layer EML disposed on the circuit element layer CEL. A semiconductor layer, a plurality of conductive layers, and a plurality of insulating layers may be disposed on the first substrate 101, and each of the semiconductor layer, the plurality of conductive layers, and the plurality of insulating layers may constitute the circuit element layer CEL and the display element layer EML. The plurality of conductive layers may include a first gate conductive layer, a second gate conductive layer, a first data conductive layer, a second data conductive layer disposed under the first planarization layer 109 to form the circuit element layer CEL, and electrodes 210 and 220 disposed on the first planarization layer 109 to form the display element layer EML. The plurality of insulating layers may include a buffer layer 102, a first gate insulating layer 103, a first protective layer 105, a first interlayer insulating layer 107, a second interlayer insulating layer 108, a first planarization layer 109, a first insulating layer 510, and the like.

[0100] In addition, the circuit element layer CEL may include circuit elements and multiple lines for driving the light emitting element 300 (such as a driving transistor DT, a switching transistor ST, a first conductive pattern CDP and multiple voltage lines VL1 and VL2), a semiconductor layer, multiple conductive layers and multiple insulating layers, and the display element layer EML may include multiple electrodes 210 and 220 and multiple light emitting elements 300.

[0101] Specifically, the first substrate 101 may be an insulating substrate. The first substrate 101 may be made of an insulating material such as glass, quartz, polymer resin, etc. In addition, the first substrate 101 may be a rigid substrate, but may also be a flexible substrate that is bendable, foldable, rollable, etc.

[0102] The lower metal layers BML1 and BML2 may be disposed on the first substrate 101. The lower metal layers BML1 and BML2 may include a first lower metal layer BML1 and a second lower metal layer BML2. The first lower metal layer BML1 and the second lower metal layer BML2 are disposed to overlap at least the first active material layer DT_ACT of the driving transistor DT and the second active material layer ST_ACT of the switching transistor ST, respectively. The lower metal layers BML1 and BML2 may include a light blocking material to prevent light from being incident on the first active material layer DT_ACT and the second active material layer ST_ACT. As an example, the first lower metal layer BML1 and the second lower metal layer BML2 may be formed of an opaque metal material. However, the present invention is not limited thereto, and in some cases, the lower metal layers BML1 and BML2 may be omitted. Although not shown in the drawings, the first lower metal layer BML1 may be electrically connected to a first source / drain electrode DT_SD1 of the driving transistor DT to be described below, and the second lower metal layer BML2 may be electrically connected to a first source / drain electrode ST_SD1 of the switching transistor ST.

[0103] The buffer layer 102 may be completely disposed on the lower metal layers BML1 and BML2 and the first substrate 101. The buffer layer 102 may be formed on the first substrate 101 to protect the transistors DT and ST of the pixel PX from moisture that penetrates through the first substrate 101 susceptible to moisture penetration, and may perform a surface planarization function. The buffer layer 102 may be formed as a plurality of alternately stacked inorganic layers or a single layer. For example, the buffer layer 102 may include a plurality of alternately stacked inorganic layers or a single layer. x ), silicon nitride (SiN x ) and silicon oxynitride (SiO x N y ) may be a multilayer formed by at least one inorganic layer, or may include a single layer formed as one inorganic layer.

[0104] The semiconductor layer is disposed on the buffer layer 102. The semiconductor layer may include a first active material layer DT_ACT of the driving transistor DT and a second active material layer ST_ACT of the switching transistor ST. The first active material layer DT_ACT and the second active material layer ST_ACT may be disposed to partially overlap gate electrodes DT_G and ST_G of a first gate conductive layer to be described below.

[0105] In an embodiment, the semiconductor layer may include polycrystalline silicon, single crystal silicon, an oxide semiconductor, etc. Polycrystalline silicon may be formed by crystallizing amorphous silicon. Examples of crystallization methods may include a rapid thermal annealing (RTA) method, a solid phase crystallization (SPC) method, an excimer laser annealing (ELA) method, a metal induced lateral crystallization (MILC) method, and a sequential lateral solidification (SLS) method, etc., but the present invention is not limited thereto. When the semiconductor layer includes polycrystalline silicon, the first active material layer DT_ACT may include a first doping region DT_ACTa, a second doping region DT_ACTb, and a first channel region DT_ACTc. The first channel region DT_ACTc may be disposed between the first doping region DT_ACTa and the second doping region DT_ACTb. The second active material layer ST_ACT may include a third doping region ST_ACTa, a fourth doping region ST_ACTb, and a second channel region ST_ACTc. The second channel region ST_ACTc may be disposed between the third doping region ST_ACTa and the fourth doping region ST_ACTb. The first doping region DT_ACTa, the second doping region DT_ACTb, the third doping region ST_ACTa, and the fourth doping region ST_ACTb may be regions in which a partial region of each of the first and second active material layers DT_ACT and ST_ACT is doped with impurities, and may be source / drain regions of the first and second active material layers DT_ACT and ST_ACT.

[0106] In an embodiment, the first active material layer DT_ACT and the second active material layer ST_ACT may include an oxide semiconductor. In this case, the doped region of each of the first active material layer DT_ACT and the second active material layer ST_ACT may be a region that has become conductive. The oxide semiconductor may be an oxide semiconductor including indium (In). In some embodiments, the oxide semiconductor may be indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium zinc tin oxide (IZTO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), indium gallium zinc tin oxide (IGZTO), etc. However, the present invention is not limited thereto.

[0107] The first gate insulating layer 103 is disposed on the semiconductor layer and the buffer layer 102. The first gate insulating layer 103 may be used as a gate insulating film of the driving transistor DT and the switching transistor ST. The first gate insulating layer 103 may be formed to include a silicon oxide (SiO x ), silicon nitride (SiN x ) and silicon oxynitride (SiO x N y ) or may be formed in a structure in which inorganic layers are alternately stacked or stacked in multiple layers.

[0108] The first gate conductive layer is disposed on the first gate insulating layer 103. The first gate conductive layer may include a first gate electrode DT_G of the driving transistor DT and a second gate electrode ST_G of the switching transistor ST. The first gate electrode DT_G is disposed to overlap at least a portion of the first active material layer DT_ACT, and the second gate electrode ST_G is disposed to overlap at least a portion of the second active material layer ST_ACT. For example, the first gate electrode DT_G may be disposed to overlap the first channel region DT_ACTc of the first active material layer DT_ACT in the thickness direction, and the second gate electrode ST_G may be disposed to overlap the second channel region ST_ACTc of the second active material layer ST_ACT in the thickness direction.

[0109] The first gate conductive layer may be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof. However, the present invention is not limited thereto.

[0110] The first protective layer 105 is disposed on the first gate conductive layer. The first protective layer 105 may be disposed to cover the first gate conductive layer to perform the function of protecting the first gate conductive layer. The first protective layer 105 may be formed to include a silicon oxide (SiO x ), silicon nitride (SiN x ) and silicon oxynitride (SiO x N y ) or may be formed in a structure in which inorganic layers are alternately stacked or stacked in multiple layers.

[0111] The second gate conductive layer is disposed on the first protective layer 105. The second gate conductive layer may include a first capacitor electrode CE1 of a storage capacitor, and the first capacitor electrode CE1 is arranged so that at least a portion of its area overlaps with the first gate electrode DT_G in the thickness direction. The first capacitor electrode CE1 and the first gate electrode DT_G may overlap each other in the thickness direction and the first protective layer 105 is disposed between the first capacitor electrode CE1 and the first gate electrode DT_G, and a storage capacitor may be formed between the first capacitor electrode CE1 and the first gate electrode DT_G. The second gate conductive layer may be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof. However, the present invention is not limited thereto.

[0112] The first interlayer insulating layer 107 is disposed on the second gate conductive layer. The first interlayer insulating layer 107 may be used as an insulating film between the second gate conductive layer and other layers disposed on the first interlayer insulating layer 107. The first interlayer insulating layer 107 may be formed to include a material such as silicon oxide (SiO x ), silicon nitride (SiN x ) and silicon oxynitride (SiO x N y ) or may be formed in a structure in which inorganic layers are alternately stacked or stacked in multiple layers.

[0113] The first data conductive layer is disposed on the first interlayer insulating layer 107. The first data conductive layer may include first and second source / drain electrodes DT_SD1 and DT_SD2 of the driving transistor DT and first and second source / drain electrodes ST_SD1 and ST_SD2 of the switching transistor ST.

[0114] The first source / drain electrode DT_SD1 and the second source / drain electrode DT_SD2 of the driving transistor DT may be respectively in contact with the first doping region DT_ACTa and the second doping region DT_ACTb of the first active material layer DT_ACT through contact holes passing through the first interlayer insulating layer 107, the first protective layer 105, and the first gate insulating layer 103. The first source / drain electrode ST_SD1 and the second source / drain electrode ST_SD2 of the switching transistor ST may be respectively in contact with the third doping region ST_ACTa and the fourth doping region ST_ACTb of the second active material layer ST_ACT through contact holes passing through the first interlayer insulating layer 107, the first protective layer 105, and the first gate insulating layer 103. In addition, the first source / drain electrode DT_SD1 of the driving transistor DT and the first source / drain electrode ST_SD1 of the switching transistor ST may be respectively electrically connected to the first lower metal layer BML1 and the second lower metal layer BML2 through other contact holes. Meanwhile, in the first source / drain electrodes DT_SD1 and ST_SD1 and the second source / drain electrodes DT_SD2 and ST_SD2 of the driving transistor DT and the switching transistor ST, when one electrode is a source electrode, the other electrode may be a drain electrode. However, the present invention is not limited thereto, and in the first source / drain electrodes DT_SD1 and ST_SD1 and the second source / drain electrodes DT_SD2 and ST_SD2, when one electrode is a drain electrode, the other electrode may be a source electrode.

[0115] The first data conductive layer may be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof. However, the present invention is not limited thereto.

[0116] The second interlayer insulating layer 108 may be disposed on the first data conductive layer. The second interlayer insulating layer 108 may be completely disposed on the first interlayer insulating layer 107 while covering the first data conductive layer, and may be used to protect the first data conductive layer. The second interlayer insulating layer 108 may be formed to include a silicon oxide (SiO x ), silicon nitride (SiN x ) and silicon oxynitride (SiO x N y ) or may be formed in a structure in which inorganic layers are alternately stacked or stacked in multiple layers.

[0117] The second data conductive layer is disposed on the second interlayer insulating layer 108. The second data conductive layer may include a first voltage line VL1 and a first conductive pattern CDP. A high potential voltage (first power supply voltage) supplied to the driving transistor DT may be applied to the first voltage line VL1.

[0118] The first conductive pattern CDP may be electrically connected to the first source / drain electrode DT_SD1 of the driving transistor DT through a contact hole formed in the second interlayer insulating layer 108. The first conductive pattern CDP may also contact the first electrode 210 to be described below, and the driving transistor DT may transmit the first power supply voltage applied from the first voltage line VL1 to the first electrode 210 through the first conductive pattern CDP. Meanwhile, in the drawings, the second data conductive layer is shown to include one first voltage line VL1 and one second voltage line VL2, but the present invention is not limited thereto. The second data conductive layer may include a larger number of first voltage lines VL1 and a larger number of second voltage lines VL2.

[0119] At the same time, Figure 3 , the second voltage line VL2 is shown to be disposed on the first insulating layer 510 located in the display element layer EML to be described below. However, the present invention is not limited thereto, and the second voltage line VL2 may be included in the second data conductive layer and may be disposed on the second interlayer insulating layer 108.

[0120] The second data conductive layer may be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof. However, the present invention is not limited thereto.

[0121] The first planarization layer 109 is disposed on the second data conductive layer. The first planarization layer 109 may include an organic insulating material, for example, an organic material such as polyimide (PI), and may perform a surface planarization function.

[0122] The first electrode 210, the light emitting element 300, the first insulating layer 510, the second voltage line VL2 and the second electrode 220 as the display element layer EML are disposed on the first planarization layer 109. However, the present invention is not limited thereto, and the display element layer EML may further include other components, so other components may also be disposed on the first planarization layer 109.

[0123] The first electrode 210 may be disposed to correspond to the sub-pixel PXn of each of the pixels PXA and PXB. For example, each first electrode 210 may be disposed in each sub-pixel PXn, and thus one first electrode 210 may be disposed to be spaced apart from the first electrode 210 disposed in another sub-pixel PXn without being connected thereto. Therefore, the first electrode 210 may be disposed in an island pattern on the entire surface of the display device 10.

[0124] like Figure 2 As shown in the figure, in a plan view, the first electrode 210 may have an angular shape in which one side thereof extends in one direction and the other side thereof extends in another direction. However, the present invention is not limited thereto, and the first electrode 210 may have a shape inclined in one direction or a circular shape having a curved outer surface. In addition, the size of the first electrode 210 is not particularly limited, but may vary according to the area of ​​each sub-pixel PXn of the display device 10. As shown in the drawings, the first electrode 210 may be formed to be smaller than each sub-pixel PXn, and may be arranged in a state spaced apart from the boundary of another adjacent sub-pixel PXn.

[0125] The first electrode 210 may be disposed on the first planarization layer 109. For example, the first electrode 210 may be directly disposed on the first planarization layer 109. The light emitting element 300 may be disposed on the first electrode 210, and the first electrode 210 may be electrically connected to at least one end of the light emitting element 300. In addition, the first electrode 210 may be electrically connected to the driving transistor DT of the circuit element layer CEL. For example, the first electrode 210 may contact the first conductive pattern CDP through the first contact hole CT1, and the first contact hole CT1 exposes a portion of the upper surface of the first conductive pattern CDP through the first planarization layer 109. The first electrode 210 may be electrically connected to the first source / drain electrode DT_SD1 of the driving transistor DT through the first conductive pattern CDP, and may receive a first power supply voltage applied through the first voltage line VL1. The first electrode 210 may be electrically connected to different driving transistors DT disposed in the subpixel PXn, and may receive the first power supply voltage independently of each driving transistor DT.

[0126] The second electrode 220 is disposed on the first electrode 210. In some embodiments, the second electrode 220 may be disposed such that at least a portion of its region overlaps the first electrode 210 in the thickness direction, and the light emitting element 300 and the first insulating layer 510 may be disposed between the second electrode 220 and the first electrode 210. Figure 2 As shown in , the second electrode 220 may also be arranged to correspond to the sub-pixel PXn of each of the pixels PXA and PXB. For example, one second electrode 220 may be arranged to be spaced apart from the second electrode 220 arranged in another sub-pixel PXn without being connected thereto. Therefore, the second electrode 220 may be arranged on the entire surface of the display device 10 in an island pattern. However, the present invention is not limited thereto. In some embodiments, one second electrode 220 is arranged in two or more sub-pixels PXn, and the light-emitting elements 300 arranged in the plurality of sub-pixels PXn may be electrically connected to the same second electrode 220.

[0127] In a plan view, the second electrode 220 may have an angled shape with one side extending in one direction and the other side extending in another direction. However, the present invention is not limited thereto, and the second electrode 220 may have a shape inclined in one direction or a circular shape with a curved outer surface.

[0128] In an embodiment, the second electrode 220 and the first electrode 210 may have different widths or areas. For example, the second electrode 220 may be formed to have an area larger than that of the first electrode 210. That is, the width of the second electrode 220 measured in one direction (e.g., the first direction DR1 or the second direction DR2) may be greater than the width of the first electrode 210 measured in the first direction DR1 or the second direction DR2. As will be described below, a plurality of light emitting elements 300 may be arranged on the first electrode 210 in a random arrangement. The second electrode 220 may be formed to have a width or area larger than that of each of the first electrode 210 and the light emitting element 300 to cover all of the light emitting elements 300 arranged on the first electrode 210, regardless of the position of the light emitting element 300. However, the present invention is not limited thereto, and in some embodiments, when the light emitting element 300 is arranged in a constant arrangement, the second electrode 220 may have a width smaller than that of the first electrode 210, and may have a shape extending in one direction. This will be described in detail below with reference to other embodiments.

[0129] The second electrode 220 may be disposed to be spaced apart from the first electrode 210 in a direction perpendicular to the upper surface of the first substrate 101. For example, the second electrode 220 may be disposed to be spaced apart from the first electrode 210 in a thickness direction, and may be directly disposed on the first insulating layer 510 disposed between the second electrode 220 and the first electrode 210. A plurality of light emitting elements 300 may be disposed between the first electrode 210 and the second electrode 220, and a space in which the first electrode 210 and the second electrode 220 are spaced apart from each other may be filled with the first insulating layer 510. The second electrode 220 may be electrically connected to at least one end of the light emitting element 300. As an example, the second electrode 220 may be disposed to surround one end of the light emitting element 300 protruding from the upper surface of the first insulating layer 510. However, the present invention is not limited thereto.

[0130] In addition, the second electrode 220 may be electrically connected to a second voltage line VL2. For example, the second electrode 220 may be in direct contact with the second voltage line VL2 disposed on the first insulating layer 510 to be connected to the second voltage line VL2. The second electrode 220 may receive a second power supply voltage applied through the second voltage line VL2. The second electrode 220 may be electrically connected to the same second voltage line VL2 disposed in a plurality of sub-pixels PXn, and may receive the same second power supply voltage from the second voltage line VL2. In addition, in some embodiments, when one second electrode 220 is disposed throughout a plurality of sub-pixels PXn, the plurality of sub-pixels PXn may receive the same electrical signal applied to the second voltage line VL2 through one integrated second electrode 220.

[0131] In an embodiment, the first electrode 210 may be a pixel electrode separated for each sub-pixel PXn, and the second electrode 220 may be a common electrode commonly connected along each sub-pixel PXn. One of the first electrode 210 and the second electrode 220 may be an anode of the light-emitting element 300, and the other of the first electrode 210 and the second electrode 220 may be a cathode of the light-emitting element 300. However, the present invention is not limited thereto, and may be capable of being opposite to the above description.

[0132] Each of the electrodes 210 and 220 may include a transparent conductive material. As an example, each of the electrodes 210 and 220 may include a material such as indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), etc., but the present invention is not limited thereto. The light emitting element 300 may emit light in a direction toward both ends of the light emitting element 300, and may emit light in a third direction DR3 directed to the upper surface of the first electrode 210. In some embodiments, the first electrode 210 may include a conductive material having a high reflectivity, and thus may reflect light emitted from the light emitting element 300 and traveling toward the upper surface of the first electrode 210. A portion of the light emitted from the light emitting element 300 is transmitted through the second electrode 220 including a transparent material to be emitted from each of the sub-pixels PXn, and another portion of the light emitted from the light emitting element 300 may be reflected by the first electrode 210 including a material having a high reflectivity to be emitted from each of the sub-pixels PXn. In an embodiment, the first electrode 210 may include a metal such as silver (Ag), copper (Cu), aluminum (Al), etc. as a material having a high reflectivity.

[0133] The present invention is not limited thereto, and the first electrode 210 may be formed in a structure in which one or more layers of each of a transparent conductive material and a metal layer having a high reflectivity are stacked, or may be formed as a single layer including a transparent conductive material and a metal layer. In an embodiment, the first electrode 210 may have a stacked structure of ITO / Ag / ITO / IZO, or may be an alloy including Al, Ni, lanthanum (La), etc.

[0134] A plurality of light emitting elements 300 may be disposed in each sub-pixel PXn and may be disposed between the first electrode 210 and the second electrode 220. One end of the light emitting element 300 may be electrically connected to the first electrode 210, and the other end of the light emitting element 300 may be electrically connected to the second electrode 220. In one embodiment, one end of the light emitting element 300 may be in direct contact with the first electrode 210, and the other end of the light emitting element 300 may be in direct contact with the second electrode 220.

[0135] According to one embodiment, the light emitting element 300 may include an active layer 360 having different materials (see Figure 4) to emit light in different wavelength ranges to the outside. The display device 10 may include a light emitting element 300 that emits light in different wavelength ranges. The light emitting element 300 of the first sub-pixel PX1 and the fourth sub-pixel PX4 may include an active layer 360 that emits light of a first color having a first wavelength in the center wavelength range, and the light emitting element 300 of the second sub-pixel PX2 and the fifth sub-pixel PX5 may include an active layer 360 that emits light of a second color having a second wavelength in the center wavelength range, and the light emitting element 300 of the third sub-pixel PX3 and the sixth sub-pixel PX6 may include an active layer 360 that emits light of a third color having a third wavelength in the center wavelength range.

[0136] Thus, light of a first color may be emitted from the first subpixel PX1 and the fourth subpixel PX4, light of a second color may be emitted from the second subpixel PX2 and the fifth subpixel PX5, and light of a third color may be emitted from the third subpixel PX3 and the sixth subpixel PX6. In some embodiments, the light of the first color may be blue light having a central wavelength range in the range of 450 nm to 495 nm, the light of the second color may be green light having a central wavelength range in the range of 495 nm to 570 nm, and the light of the third color may be red light having a central wavelength range in the range of 620 nm to 752 nm. However, the present invention is not limited thereto. In some cases, each of the first to sixth subpixels PX1 to PX6 may include the same type of light emitting element 300 to emit light of substantially the same color.

[0137] A plurality of light emitting elements 300 may be disposed spaced apart from each other on the first electrode 210. The separation distance between the light emitting elements 300 is not particularly limited. In some cases, a plurality of light emitting elements 300 may be disposed adjacent to each other to form a group, and a plurality of other light emitting elements 300 may be grouped in a state of being spaced apart at predetermined intervals and may be randomly arranged at an uneven density, such as Figure 2 In addition, in some embodiments, at least some of the plurality of light emitting elements 300 disposed in one sub-pixel PXn may be arranged in one direction.

[0138] In some embodiments, the light emitting element 300 may be directly disposed on the first electrode 210, and may be in direct contact with the second electrode 220 disposed above the first electrode 210. As described above, since both ends of the light emitting element 300 are in direct contact with the first electrode 210 and the second electrode 220, the light emitting element 300 may be electrically connected to the first electrode 210 and the second electrode 220. However, the present invention is not limited thereto, and in some cases, other layers may also be disposed between the light emitting element 300 and the first electrode 210 or the second electrode 220.

[0139] Meanwhile, as will be described below, the light emitting element 300 may include a plurality of semiconductor layers and an active layer 360 (see Figure 4 ), and may have a structure in which a plurality of semiconductor layers and an active layer 360 are sequentially stacked. According to one embodiment, the light emitting element 300 of the display device 10 may be arranged so that the direction along which the plurality of semiconductor layers are stacked points to a direction perpendicular to the upper surface of the first substrate 101. That is, the light emitting element 300 may be parallel to the direction along which the semiconductor layers are stacked and the direction along which the first electrode 210 and the second electrode 220 are spaced apart from each other. The light generated by the active layer 360 of the light emitting element 300 may be emitted from both ends of the light emitting element 300 facing a direction along which the semiconductor layers of the light emitting element 300 are stacked. The light emitting element 300 of the display device 10 may be arranged so that the upper surface of the first substrate 101 is perpendicular to the direction along which the semiconductor layers are stacked, and at least one end thereof faces an upward direction relative to the first substrate 101. Therefore, the light emitted from the active layer 360 of the light emitting element 300 may be emitted from both ends to travel toward an upward direction relative to the first substrate 101.

[0140] Here, the second electrode 220 may be disposed on one end of the light emitting element 300. As described above, the second electrode 220 may be made of a transparent material, and the light emitted from the light emitting element 300 to the second electrode 220 may pass through the second electrode 220 to travel in an upward direction relative to the first substrate 101. In addition, the other end of the light emitting element 300 may face the first electrode 210 or may be in direct contact with the first electrode 210, and as described above, the first electrode 210 may include a material having a high reflectivity. Therefore, the light emitted from the light emitting element 300 to the first electrode 210 may be reflected by the first electrode 210 and travel toward the second electrode 220. However, the present invention is not limited thereto.

[0141] Meanwhile, the light emitting element 300 may include other types of light emitting elements 300A and 300B whose one ends face different directions. For example, when defining one end of the light emitting element 300 on which a specific semiconductor layer is disposed, the display device 10 may include a first type light emitting element 300A and a second type light emitting element 300B, the first type light emitting element 300A being disposed so that one end thereof faces the first electrode 210, and the second type light emitting element 300B being disposed so that one end thereof faces the second electrode 220. Both ends of each of the first type light emitting element 300A and the second type light emitting element 300B may be electrically connected to the first electrode 210 and the second electrode 220, respectively, and one end thereof on which a specific semiconductor layer is disposed may be connected to the first electrode 210 and the second electrode 220, respectively. Therefore, in at least some of the light emitting elements 300 disposed in each sub-pixel PXn, different semiconductor layers may be disposed to face the first electrode 210. The first type light emitting element 300A and the second type light emitting element 300B may have different semiconductor layers electrically connected to the first electrode 210. This will be described in more detail below in conjunction with the description of the structure of the light emitting element 300 .

[0142] The first insulating layer 510 may be provided between the first electrode 210 and the second electrode 220 to surround the outer surface of each of the light emitting elements 300. For example, the first insulating layer 510 may be provided to cover the first electrode 210 on the first planarization layer 109, and may be provided to directly contact the first planarization layer 109 and the first electrode 210. The first insulating layer 510 may be provided to at least cover the first electrode 210 to prevent the first electrode 210 from directly contacting the second electrode 220, thereby serving to insulate the first electrode 210 and the second electrode 220 from each other.

[0143] exist Figure 2 and Figure 3 , the first insulating layer 510 is shown as being completely disposed on the first planarization layer 109. That is, the first insulating layer 510 may be disposed as a layer on the first planarization layer 109 without being divided for the sub-pixels PXn. However, the present invention is not limited thereto, and in some embodiments, the first insulating layer 510 may be disposed in each sub-pixel PXn, or may be patterned to be disposed throughout several sub-pixels PXn. For example, the first insulating layer 510 may be disposed to have an island shape or a linear shape on the entire surface of the display device 10.

[0144] The first insulating layer 510 may be disposed to surround the outer surface of the light emitting element 300 disposed on the first electrode 210. As an example, the display device 10 may have a structure in which the light emitting element 300 is disposed to correspond to a hole formed in the first insulating layer 510. At least a portion of the outer surface of the light emitting element 300 may be in direct contact with the first insulating layer 510, and at least one end of the light emitting element 300 may protrude from the upper surface of the first insulating layer 510, so that the outer surface of the light emitting element 300 may not be in direct contact with the first insulating layer 510. The outer surface of the protruding portion of the light emitting element 300 may be in contact with the second electrode 220 disposed on the first insulating layer 510. That is, according to one embodiment, the thickness of the first insulating layer 510 may be less than the sum of the thickness of the first electrode 210 and the height of the light emitting element 300. In addition, the separation distance between the first electrode 210 and the second electrode 220 measured in the thickness direction may be substantially the same as the height of the light emitting element 300, and may be less than the width of the light emitting element 300. However, the present invention is not limited thereto, and the thickness of the first insulating layer 510 may be formed to be greater than the sum of the thickness of the first electrode 210 and the height of the light emitting element 300 , so that the entire outer surface of the light emitting element 300 may be surrounded by the first insulating layer 510 .

[0145] The light emitting element 300 may include a plurality of semiconductor layers and an insulating film 380 surrounding the semiconductor layers (see Figure 4 ). According to one embodiment, the first insulating layer 510 may be in direct contact with a portion of the insulating film 380 of the light emitting element 300. However, the present invention is not limited thereto, and in some cases, in the light emitting element 300, the insulating film 380 may be omitted, and the first insulating layer 510 may be in direct contact with the semiconductor layer of the light emitting element 300.

[0146] The first insulating layer 510 may include an inorganic insulating material or an organic insulating material. In an embodiment, the first insulating layer 510 may include an inorganic insulating material such as silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide (Al x O y ), aluminum nitride (Al x N y ) and the like. Alternatively, the first insulating layer 510 may include an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, PI resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin, benzocyclobutene, cardo resin, siloxane resin, silsesquioxane resin, polymethyl methacrylate, polycarbonate or polymethyl methacrylate-polycarbonate synthetic resin. However, the present invention is not limited thereto.

[0147] Furthermore, at least some of the light emitted from the light emitting element 300 may be emitted from the side surface of the light emitting element 300. The first insulating layer 510 may include a transparent insulating material so that the light emitted from the light emitting element 300 may be transmitted through the first insulating layer 510. However, the present invention is not limited thereto.

[0148] The second voltage line VL2 may be disposed in the non-emission region of the pixels PXA and PXB or the sub-pixels PXn. The second voltage line VL2 may include a line trunk VLS disposed in the non-emission region of each of the sub-pixels PXn and extending in the first direction DR1, and a line branch portion VLP branched from the line trunk VLS in the second direction DR2.

[0149] The line trunk VLS of the second voltage line VL2 may extend in the first direction DR1 and may be disposed throughout another adjacent subpixel PXn. One line trunk VLS may be disposed throughout a plurality of subpixels PXn and may also be disposed in other pixels and subpixels PXn adjacent along the first direction DR1. Another line trunk VLS may be disposed in another pixel or subpixel PXn adjacent along the second direction DR2 and extend in the first direction DR1.

[0150] The line branch portion VLP of the second voltage line VL2 may branch from the line trunk portion VLS in the second direction DR2 and may overlap the second electrode 220 disposed in each subpixel PXn in the thickness direction. The second electrode 220 may be electrically connected to the second voltage line VL2 through the line branch portion VLP of the second voltage line VL2.

[0151] The second voltage line VL2 may be disposed on the first insulating layer 510. Figure 3 As shown in , the second voltage line VL2 may be disposed on a portion of the first insulating layer 510 located in the non-light emitting region and have a relatively small thickness. However, the present invention is not limited thereto, and the first insulating layer 510 may be formed to have a uniform thickness, and the second electrode 220 and the second voltage line VL2 may be located at substantially the same height.

[0152] Furthermore, in some embodiments, when one second electrode 220 is disposed throughout a greater number of sub-pixels PXn, the second voltage line VL2 may be disposed only in some pixels PXA and PXB or sub-pixels PXn. A description thereof will be provided below.

[0153] The display device 10 according to one embodiment may include a first electrode 210, a second electrode 220, and a light emitting element 300, the light emitting element 300 including semiconductor layers stacked in one direction and disposed between the first electrode 210 and the second electrode 220. The first electrode 210 and the second electrode 220 may be spaced apart from each other in a direction perpendicular to the upper surface of the first substrate 101, and the light emitting element 300 may be disposed such that one direction along which the semiconductor layers are stacked is perpendicular to the upper surface of the first substrate 101. That is, the light emitting element 300 of the display device 10 may be disposed such that a direction along which a plurality of semiconductor layers are stacked is parallel to a direction along which the first electrode 210 and the second electrode 220 are spaced apart from each other, and light emitted from the active layer 360 of the light emitting element 300 may travel toward an upward direction relative to the first substrate 101.

[0154] Meanwhile, the light emitting element 300 may be a light emitting diode, specifically, an inorganic light emitting diode having a size of micrometer or nanometer and made of an inorganic material. The inorganic light emitting diode may be electrically connected to two electrodes facing each other, and may emit light of a specific wavelength range when an electrical signal is applied thereto.

[0155] The light emitting element 300 may include a semiconductor layer doped with impurities of any conductive type (eg, p-type or n-type). The semiconductor layer may receive an electrical signal applied from an external power source and emit light in a specific wavelength range.

[0156] Figure 4 is a schematic diagram showing a light emitting element according to an embodiment. Figure 5 is a cross-sectional view of a light emitting element according to an embodiment.

[0157] Reference Figure 4 and Figure 5 The light emitting element 300 may include a first semiconductor layer 310 , a second semiconductor layer 320 , an active layer 360 , an electrode layer 370 and an insulating film 380 .

[0158] The first semiconductor layer 310 may be an n-type semiconductor layer. As an example, when the light emitting element 300 emits light in a blue wavelength range, the first semiconductor layer 310 may include a semiconductor layer having a chemical formula of Al x Ga y In 1-x-yN (0≤x≤1, 0≤y≤1, and 0≤x+y≤1) semiconductor material. For example, the semiconductor material may be one or more of AlGaInN, GaN, AlGaN, InGaN, AlN, and InN doped with n-type impurities. The first semiconductor layer 310 may be doped with an n-type dopant. As an example, the n-type dopant may be Si, Ge, Sn, Se, etc. In an embodiment, the first semiconductor layer 310 may be n-GaN doped with n-type Si. The thickness of the first semiconductor layer 310 may be in the range of 0.1 μm to 0.5 μm, but the present invention is not limited thereto.

[0159] The second semiconductor layer 320 may be disposed on the active layer 360 to be described below. The second semiconductor layer 320 may be a p-type semiconductor. As an example, when the light emitting element 300 emits light in a blue or green wavelength range, the second semiconductor layer 320 may include a semiconductor layer having a chemical formula of Al x Ga y In 1-x-y N (0≤x≤1, 0≤y≤1, and 0≤x+y≤1) semiconductor material. For example, the semiconductor material may be one or more of AlGaInN, GaN, AlGaN, InGaN, AlN, and InN doped with p-type impurities. The second semiconductor layer 320 may be doped with a p-type dopant. As an example, the p-type dopant may be Mg, Zn, Ca, Ba, etc. In an embodiment, the second semiconductor layer 320 may be p-GaN doped with p-type Mg. The thickness of the second semiconductor layer 320 may be in the range of 0.05 μm to 0.10 μm, but the present invention is not limited thereto.

[0160] Meanwhile, each of the first semiconductor layer 310 and the second semiconductor layer 320 is shown in the drawings as being formed as one layer, but the present invention is not limited thereto. According to some embodiments, each of the first semiconductor layer 310 and the second semiconductor layer 320 may also include a larger number of layers, for example, a cladding layer or a tensile strain barrier reduction (TSBR) layer, depending on the material of the active layer 360. A description thereof will be provided below with reference to other drawings.

[0161] The active layer 360 may be disposed between the first semiconductor layer 310 and the second semiconductor layer 320. The active layer 360 may include a material having a single quantum well structure or a multi-quantum well structure. When the active layer 360 includes a material having a multi-quantum well structure, the active layer 360 may have a structure in which quantum layers and well layers may be alternately stacked. In response to an electrical signal applied through the first semiconductor layer 310 and the second semiconductor layer 320, the active layer 360 may emit light due to the recombination of electron-hole pairs. As an example, when the active layer 360 emits light in a blue wavelength range, the active layer 360 may include materials such as AlGaN, AlGaInN, and the like. In particular, when the active layer 360 has a multi-quantum well structure in which quantum layers and well layers may be alternately stacked, the quantum layers may include materials such as AlGaN or AlGaInN, and the well layers may include materials such as GaN or AlInN. In an embodiment, the active layer 360 includes AlGaInN as a quantum layer and AlInN as a well layer. As described above, the active layer 360 may emit blue light having a central wavelength in the range from 450 nm to 495 nm.

[0162] However, the present invention is not limited thereto, and the active layer 360 may have a structure in which a semiconductor material having a large energy band gap and a semiconductor material having a small energy band gap may be alternately stacked, or include other group III to group V semiconductor materials according to the wavelength range of the emitted light. The light emitted by the active layer 360 is not limited to light in the blue wavelength range, and in some cases, the active layer 360 may also emit light in the red or green wavelength range. The thickness of the active layer 360 may be in the range of 0.05 μm to 0.10 μm, but the present invention is not limited thereto.

[0163] Meanwhile, light emitted from the active layer 360 may be emitted not only to the outer surface of the light emitting element 300 in the length direction but also to both side surfaces of the light emitting element 300. Directivity of light emitted from the active layer 360 is not limited to one direction.

[0164] The electrode layer 370 may be an ohmic contact electrode. However, the present invention is not limited thereto, and the electrode layer 370 may also be a Schottky contact electrode. The light emitting element 300 may include at least one electrode layer 370. Although the light emitting element 300 is Figure 4 370, but the present invention is not limited thereto. In some cases, the light emitting element 300 may include a greater number of electrode layers 370, or may omit the electrode layer 370. Even when the number of electrode layers 370 varies or other structures are included, the description of the light emitting element 300 may be applied in the same manner.

[0165] When the light emitting element 300 is electrically connected to the electrodes 210 and 220, the electrode layer 370 can reduce the resistance between the light emitting element 300 and the electrode or the contact electrode. The electrode layer 370 may include a conductive metal or a conductive metal oxide. For example, the electrode layer 370 may include at least one of aluminum (Al), titanium (Ti), indium (In), gold (Au), silver (Ag), indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO). In addition, the electrode layer 370 may include a semiconductor material doped with n-type or p-type impurities. However, the present invention is not limited thereto.

[0166] The insulating film 380 may be provided to surround the outer surface of the plurality of semiconductor layers and the electrode layer. In an embodiment, the insulating film 380 may be provided to surround at least the outer surface of the active layer 360, and may extend in one direction along which the light emitting element 300 extends. The insulating film 380 may be used to protect the member. As an example, the insulating film 380 may be formed to surround the side surface portion of the member and expose both ends of the light emitting element 300 in the length direction.

[0167] In the drawings, the insulating film 380 is shown to be formed to extend in the length direction of the light emitting element 300 to cover the side surface from the first semiconductor layer 310 to the side surface of the electrode layer 370, but the present invention is not limited thereto. Since the insulating film 380 covers only the outer surfaces of some semiconductor layers including the active layer 360 or only covers a portion of the outer surface of the electrode layer 370, the outer surface of the electrode layer 370 may be partially exposed. In addition, the upper surface of the insulating film 380 may be formed to have a circular cross section in a region adjacent to at least one end of the light emitting element 300.

[0168] The thickness of the insulating film 380 may be in the range of 10 nm to 1.0 μm, but the present invention is not limited thereto. Preferably, the thickness of the insulating film 380 may be about 40 nm.

[0169] The insulating film 380 may include a material having an insulating property, for example, silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum nitride (Al x N y ), aluminum oxide (Al x O y ) etc. Therefore, it is possible to prevent an electrical short circuit that may occur when the active layer 360 is in direct contact with an electrode through which an electrical signal is transmitted to the light emitting element 300. In addition, since the insulating film 380 protects the outer surface of the light emitting element 300 including the active layer 360, it is possible to prevent the deterioration of the light emitting efficiency.

[0170] In addition, in some embodiments, the outer surface of the insulating film 380 may be surface treated. When manufacturing the display device 10, the light emitting element 300 may be aligned by being sprayed on the electrode in a state of being dispersed in a predetermined ink. Here, in order to maintain the state in which the light emitting element 300 is dispersed in the ink without being aggregated with another adjacent light emitting element 300, the surface of the insulating film 380 may be treated to be hydrophobic or hydrophilic.

[0171] The light emitting element 300 may have a structure in which the first semiconductor layer 310, the active layer 360, and the second semiconductor layer 320 are sequentially stacked in one direction. For example, the light emitting element 300 may include the first semiconductor layer 310, the active layer 360, and the second semiconductor layer 320 stacked in the third direction DR3, and may have a height H measured in the third direction DR3 and a width W measured in a direction perpendicular to the third direction DR3. According to one embodiment, in the light emitting element 300, the height H measured in the third direction DR3 may be smaller than the width W measured in a direction perpendicular to the third direction DR3.

[0172] like Figure 4 As shown in , the light emitting element 300 may have a cylindrical shape, a disk shape, or a rod shape having a width W greater than a height H. However, the present invention is not limited thereto, and the light emitting element 300 may have various shapes, such as a rod, a wire, a tube, etc., a cube, a cuboid, a polygonal prism such as a hexagonal prism, etc., or a shape extending in one direction and having a partially inclined outer surface.

[0173] The light emitting element 300 according to one embodiment may have a shape in which a width W measured in a direction perpendicular to the third direction DR3 is greater than a height H measured in the third direction DR3 along which the semiconductor layer and the active layer 360 are stacked. That is, the aspect ratio of the light emitting element 300 may be in the range of 0.1 to 1.0. The light emitting element 300 may have a height H in the range of from 0.2 μm to 5 μm or from 0.5 μm to 4 μm, and may preferably have a length of 1 μm to 3 μm. In addition, the light emitting element 300 may have a width W in the range of from 1 μm to 10 μm or from 2 μm to 6 μm, and may preferably have a length of 3 μm to 5 μm. However, the present invention is not limited thereto, and the plurality of light emitting elements 300 included in the display device 10 may have different diameters according to the composition difference of the active layer 360. Since the light emitting element 300 has a structure in which the cross-sectional area is large, the area of ​​the active layer 360 generating light may be relatively increased, and thus the light emitting efficiency may be further improved compared to the light emitting element 300 having a different structure.

[0174] In addition, as described above, the first electrode 210 and the second electrode 220 of the display device 10 may be disposed to be spaced apart from each other in a direction perpendicular to the upper surface of the first substrate 101, and the light emitting element 300 may be disposed between the first electrode 210 and the second electrode 220. As an example, the third direction DR3 along which the semiconductor layers of the light emitting element 300 are stacked may be parallel to the direction along which the first electrode 210 and the second electrode 220 are spaced apart from each other. Light emitted from the active layer 360 of the light emitting element 300 may be emitted to both ends of the light emitting element 300 that are exposed and not surrounded by the insulating film 380, and the light emitting element 300 disposed in each sub-pixel PXn may be disposed so that the direction facing the both ends thereof points to the upward direction relative to the first substrate 101. In other words, the light emitting element 300 may have a structure in which a plurality of semiconductor layers are stacked in one direction, and the one direction may be disposed to face the upward direction relative to the first substrate 101 of the display device 10.

[0175] In addition, the light emitting element 300 may have a width W greater than its height H. In one embodiment, a separation distance between the first electrode 210 and the second electrode 220 measured in the thickness direction may be substantially the same as the height H of the light emitting element 300, and may be less than the width W of the light emitting element 300. In the light emitting element 300, a direction along which the plurality of semiconductor layers are stacked may be parallel to a direction along which the first electrode 210 and the second electrode 220 are spaced apart from each other, and both end surfaces of the light emitting element 300 may smoothly contact the first electrode 210 and the second electrode 220. Figure 3 As shown in FIG, both ends of the light emitting element 300 may be in direct contact with the first electrode 210 and the second electrode 220, and since the light emitting element 300 is formed to have a large width W, it is possible to increase the area in which the light emitting element 300 is in contact with the first electrode 210 and the second electrode 220. Therefore, the contact surface between the light emitting element 300 and the electrodes 210 and 220 may be widened, thereby reducing the contact resistance.

[0176] Meanwhile, as described above, the display device 10 may include the first type light emitting element 300A and the second type light emitting element 300B facing different directions. For example, the first type light emitting element 300A may be arranged so that the first semiconductor layer 310 faces the first electrode 210, and the second type light emitting element 300B may be arranged so that the first semiconductor layer 310 faces the second electrode 220. Both ends of each of the first type light emitting element 300A and the second type light emitting element 300B may be electrically connected to the first electrode 210 and the second electrode 220, respectively, and different ends thereof may be connected to the first electrode 210 and the second electrode 220, respectively. Figure 3As shown in , in the first type light emitting element 300A, the first semiconductor layer 310 may be electrically connected to the first electrode 210, and the electrode layer 370 may be electrically connected to the second electrode 220, and in the second type light emitting element 300B, the electrode layer 370 may be electrically connected to the first electrode 210, and the first semiconductor layer 310 may be electrically connected to the second electrode 220. For example, in the first type light emitting element 300A, the first semiconductor layer 310 may be in direct contact with the first electrode 210, and the electrode layer 370 may be in direct contact with the second electrode 220. In the second type light emitting element 300B, the first semiconductor layer 310 may be in direct contact with the second electrode 220, and the electrode layer 370 may be in direct contact with the first electrode 210. However, the present invention is not limited thereto, and other layers may also be provided between the light emitting element 300 and each of the electrodes 210 and 220, or the electrode layer 370 of the light emitting element 300 may be omitted, so that in some light emitting elements 300, the second semiconductor layer 320 may be in direct contact with one of the electrodes 210 and 220.

[0177] During the manufacturing process of the display device 10, the light emitting element 300 may be dispersed in the ink Ink ( Fig.11 ) is ejected onto the first electrode 210 and may be deposited in the ink Ink to be disposed on the first electrode 210. As described above, the light emitting element 300 may have a structure in which a plurality of semiconductor layers are stacked in the third direction DR3, but the light emitting element 300 may not be disposed so that the first semiconductor layer 310 must face the first electrode 210. In some cases, the light emitting element 300 may be disposed so that the electrode layer 370 or the second semiconductor layer 320 faces the first electrode 210.

[0178] In this case, in the first type light emitting element 300A and the second type light emitting element 300B, the ends electrically connected to the first electrode 210 may have opposite polarities. However, in the display device 10, the driving signal transmitted to the light emitting element 300 may be alternating current (AC) power, and even when the light emitting element 300 is connected between the first electrode 210 and the second electrode 220 in the opposite direction, the light emitting element 300 may receive the driving signal to emit light.

[0179] The light emitting element 300 according to one embodiment can be manufactured by an epitaxial growth method of performing crystal growth of a semiconductor layer on a base substrate. Here, when the semiconductor layer grown on the base substrate is etched in a direction perpendicular to the upper surface of the base substrate, the semiconductor layer can be etched so that the width of the light emitting element 300 is greater than its length. Therefore, a light emitting element 300 having an aspect ratio of 1.0 or less can be manufactured. Hereinafter, a method for manufacturing the light emitting element 300 will be described with reference to other drawings.

[0180] Figures 6 to 9 is a cross-sectional view showing a process of manufacturing a light emitting element according to an embodiment.

[0181] First, refer to Figure 6 , a lower substrate 1000 including a base substrate 1100 and a buffer material layer 1200 formed on the base substrate 1100 is prepared, and a plurality of semiconductor layers 3100, 3200, 3600, and 3700 are formed on the buffer material layer 1200. The base substrate 1100 may include a substrate such as glass and sapphire (Al 2 O 3 ) substrate. However, the present invention is not limited thereto, and the base substrate 1100 may be formed as a conductive substrate such as a GaN, SiC, ZnO, Si, GaP, or GaAs substrate. Hereinafter, a case where the base substrate 1100 is a sapphire (Al 2 O 3 The thickness of the base substrate 1100 is not particularly limited, but as an example, the base substrate 1100 may have a thickness in the range from 400 μm to 1500 μm.

[0182] A plurality of semiconductor layers 3100, 3200, 3600, and 3700 may be formed on the lower substrate 1000. A plurality of semiconductor layers grown by an epitaxial method may be formed by growing a seed crystal. Here, the method for forming the semiconductor layer may include an electron beam deposition method, a physical vapor deposition (PVD) method, a chemical vapor deposition (CVD) method, a plasma laser deposition (PLD) method, a dual-type thermal evaporation method, a sputtering method, a metal organic chemical vapor deposition (MOCVD) method, etc., preferably, a MOCVD method. However, the present invention is not limited thereto.

[0183] The precursor material for forming the plurality of semiconductor layers is not particularly limited within a range that can be generally selected to form a target material. As an example, the precursor material may be a metal precursor including an alkyl group such as a methyl group or an ethyl group. For example, the precursor material may be a precursor such as trimethylgallium (Ga(CH 3 ) 3 ), trimethylaluminum (Al(CH 3 ) 3 ) or triethyl phosphate ((C 2 H 5 ) 3 PO 4 ) compounds, but the present invention is not limited thereto. Hereinafter, the method of forming a plurality of semiconductor layers, process conditions, etc. will be omitted in the description, and the manufacturing method of the light emitting element 300 and the order of the stacking structure will be described in detail.

[0184] A buffer material layer 1200 may be formed on the base substrate 1100. In the drawings, one buffer material layer 1200 is shown as being stacked as one layer, but the present invention is not limited thereto, and a plurality of buffer layers may be formed. The buffer material layer 1200 may be provided to reduce a lattice constant difference between the first semiconductor 3100 and the base substrate 1100.

[0185] As an example, the buffer material layer 1200 may include an undoped semiconductor, may include a material substantially the same as that of the first semiconductor 3100, and may include a material not doped with an n-type or p-type dopant. In an embodiment, the buffer material layer 1200 may include at least one selected from undoped InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, but the present invention is not limited thereto. In addition, according to the base substrate 1100, the buffer material layer 1200 may be omitted. Hereinafter, a case where the buffer material layer 1200 including an undoped semiconductor is formed on the base substrate 1100 will be described as an example.

[0186] A plurality of semiconductor layers 3100, 3200, 3600, and 3700 may be formed on the buffer material layer 1200. The plurality of semiconductor layers 3100, 3200, 3600, and 3700 may include a first semiconductor 3100, an active layer 3600, a second semiconductor 3200, and an electrode material layer 3700. The plurality of semiconductor layers may correspond to the first semiconductor layer 310, the active layer 360, the second semiconductor layer 320, and the electrode layer 370 of the light emitting element 300, respectively. That is, the plurality of semiconductor layers may include the same materials as the first semiconductor layer 310, the active layer 360, the second semiconductor layer 320, and the electrode layer 370 of the light emitting element 300, respectively.

[0187] Subsequently, some of the plurality of semiconductor layers may be etched ( Figure 6 The semiconductor core 30 of the light emitting element 300 is formed by first etching in the process.

[0188] Reference Figure 7 , on the lower substrate 1000, some of the plurality of semiconductor layers may be etched and removed, and a semiconductor core 30 and a first sub-semiconductor 3100' which is an unetched portion of the first semiconductor 3100 may be formed. The semiconductor layer may be etched by a typical method. For example, the semiconductor layer may be etched by forming an etching mask layer thereon and etching the semiconductor layer along the etching mask layer in a direction perpendicular to the lower substrate 1000.

[0189] For example, the process of etching the semiconductor layer may be performed by a dry etching method, a wet etching method, a reactive ion etching (RIE) method, an inductively coupled plasma reactive ion etching (ICP-RIE) method, etc. Anisotropic etching may be performed by a dry etching method, and therefore, the dry etching method may be suitable for vertical etching. When the etching method of the above method is used, the etchant may include Cl 2 , O 2 Etc. However, the present invention is not limited thereto.

[0190] In some embodiments, the semiconductor layer may be etched by mixing a dry etching method and a wet etching method. For example, first, etching in a depth direction may be performed by a dry etching method, and then the sidewall etched by a wet etching method as an isotropic etching method may be disposed on a plane perpendicular to the surface.

[0191] In the process of etching the semiconductor layer (first etching), the semiconductor core 30 remaining after etching may have a width greater than its height. As described above, the light emitting element 300 according to one embodiment may have a width W greater than the height H, and the width W may vary according to the structure of the mask used in the process of etching the semiconductor layer. A detailed description thereof will be omitted.

[0192] Then, refer to Figure 8 and Fig. 9 , an insulating film 380 is formed around the side surface of the semiconductor core 30, and the semiconductor core 30 on which the insulating film 380 is formed can be separated from the first sub-semiconductor 3100' to manufacture the light emitting element 300. The insulating film 380 can be formed by forming an insulating film around the outer surface of the semiconductor core 30 and partially removing the insulating film to expose one end of the semiconductor core 30 (for example, the upper surface of the electrode layer 370). The process of forming the insulating film can be performed by applying an insulating material to the outer surface of the semiconductor core 30 or by a precipitation method. As an example, the insulating film can be formed by an atomic layer deposition (ALD) method.

[0193] The process of separating the semiconductor core 30 on which the insulating film 380 is formed is not particularly limited. Although not shown in the drawings, the process of separating the semiconductor core 30 from the first sub-semiconductor 3100' may be performed by a physical separation method, a chemical separation method, or the like.

[0194] Meanwhile, since the light emitting element 300 has a relatively small height H, in the first semiconductor 3100, the first sub-semiconductor 3100' may be retained after the first etching process (first etching). In the accompanying drawings, it is shown that only the semiconductor core 30 formed on the first sub-semiconductor 3100' is separated to form the light emitting element 300, but the present invention is not limited thereto. In some embodiments, during the manufacturing process of the light emitting element 300, a portion of the first sub-semiconductor 3100' may be separated together with the semiconductor core 30, and in the light emitting element 300, the first semiconductor layer 310 may include an extension having a larger width. Therefore, in the light emitting element 300, the width of the first semiconductor layer 310 may be greater than the width of the second semiconductor layer 320, and during the manufacturing process of the display device 10, most of the light emitting element 300 may be arranged so that the first semiconductor layer 310 faces the first electrode 210. A detailed description thereof will be provided below.

[0195] The light emitting element 300 manufactured as described above can be dispersed in the ink Ink ( Fig.11 During the manufacturing process of the display device 10, the light emitting element 300 may be ejected onto the first electrode 210 in a state dispersed in the ink Ink, and the light emitting element 300 may be precipitated in the ink Ink in the direction of gravity to be disposed on the first electrode 210.

[0196] Figures 10 to 12 is a cross-sectional view illustrating a manufacturing process of a display device according to an embodiment.

[0197] Reference Fig.10 , a circuit element layer CEL including a first substrate 101 and a plurality of insulating layers and conductive layers disposed on the first substrate 101 is prepared, and a first electrode 210 formed on the circuit element layer CEL is prepared. The description of the shapes of the circuit element layer CLE and the first electrode 210 is the same as above, so a detailed description thereof will be omitted.

[0198] Then, refer to Fig.11, the ink Ink in which the light-emitting element 300 is dispersed is ejected onto the first electrode 210. The light-emitting element 300 may be dispersed in the ink Ink and precipitated in the gravity direction to be arranged on the first electrode 210. Here, the light-emitting element 300 may be arranged so that one end thereof (for example, one end in the direction along which the first semiconductor layer 310 is arranged) faces the first electrode 210 or the opposite direction. As described above, the display device 10 may include a first type light-emitting element 300A and a second type light-emitting element 300B. This may be due to the fact that the light-emitting element 300 in a state of being dispersed in the ink Ink in the manufacturing process of the display device 10 is precipitated and arranged without directionality. In addition, the plurality of light-emitting elements 300 arranged on the first electrode 210 may not be arranged in a specific direction, and may be arranged in a random arrangement by being spaced apart from each other at uneven intervals.

[0199] However, the present invention is not limited thereto, and as described above, when the first semiconductor layer 310 of the light emitting element 300 further includes an extension portion, the light emitting element 300 may be disposed such that one end thereof faces a predetermined direction.

[0200] Then, refer to Fig.12 , a first insulating layer 510 is formed on the first electrode 210 around the outer surface of each of the light emitting elements 300, and a second voltage line VL2 is formed on a partial area of ​​the first insulating layer 510. The first insulating layer 510 may be formed by being completely disposed on the first electrode 210 and the first planarization layer 109, including the light emitting element 300, and then being etched to expose one end of each of the light emitting elements 300. However, the present invention is not limited thereto. The description of its structure is the same as above.

[0201] Next, although not shown in the drawings, the second electrode 220 is formed on the first insulating layer 510. The description of the structure of the second electrode 220 is the same as described above.

[0202] Subsequently, various embodiments of the display device 10 and the light emitting element 300 according to one embodiment will be described.

[0203] Fig.13 is a cross-sectional view of a light emitting element according to another embodiment. Fig.14 It is shown that Fig.13 A cross-sectional view of a portion of a display device having a light-emitting element.

[0204] Reference Fig.13 and Fig.14In the light emitting element 300_1 according to an embodiment, the electrode layer 370 may be omitted. Therefore, in each of the first type light emitting element 300A_1 and the second type light emitting element 300B_1 of the display device 10_1 according to an embodiment, the electrode layer 370 may be omitted, and the second semiconductor layer 320 may directly contact the first electrode 210 or the second electrode 220. Fig.13 and Fig.14 The light emitting element 300_1 and the display device 10_1 are Figure 3 and Figure 4 The light emitting element 300 of the embodiment of FIG. 1 is different from the display device 10 in that the electrode layer 370 is omitted. Hereinafter, repeated description will be omitted, and a description will be provided in detail based on the difference from the above.

[0205] As described above, the light emitting element 300_1 may have a shape in which the height H is smaller than the width W, and both end surfaces of the light emitting element 300_1 may contact the first electrode 210 and the second electrode 220 with a wide area. Fig.13 As in the light emitting element 300_1 of FIG. 3 , even if the electrode layer 370 is omitted, the contact resistance between the light emitting element 300_1 and the electrodes 210 and 220 can be small because the width W of the second semiconductor layer 320 is large. Fig.14 As shown in , in the first type light emitting element 300A_1 , the second semiconductor layer 320 may be in direct contact with the second electrode 220 , and in the second type light emitting element 300B_1 , the second semiconductor layer 320 may be in direct contact with the first electrode 210 .

[0206] In the drawings, the side surface of the second semiconductor layer 320 is shown as being surrounded by the insulating film 380, but the present invention is not limited thereto. The insulating film 380 may be provided to surround only a portion of the side surface of the second semiconductor layer 320, and the side surface of the second semiconductor layer 320 may be partially exposed. In this case, the side surface of the second semiconductor layer 320 may be in direct contact with the second electrode 220 or the first insulating layer 510.

[0207] Meanwhile, when the electrode layer 370 of the light emitting element 300 is omitted, the display device 10 may further include a contact electrode disposed between the light emitting element 300 and each of the electrodes 210 and 220 for smooth contact between the light emitting element 300 and each of the electrodes 210 and 220 .

[0208] Fig.15 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0209] Reference Fig.15According to an embodiment, the display device 10_2 may further include a first contact electrode 261_2 disposed on the first electrode 210_2 and a second contact electrode 262_2 disposed between the second electrode 220_2 and the first insulating layer 510 and the light emitting element 300_2. Fig.15 The display device 10_2 and Fig.14 The display device 10_1 of the embodiment of FIG. 1 is different in that contact electrodes 261_2 and 262_2 are further provided between each of the electrodes 210_2 and 220_2 and the light emitting element 300_2. Hereinafter, repeated description will be omitted, and description will be provided based on the difference from the above.

[0210] Fig.15 The display device 10_2 may further include a first contact electrode 261_2 disposed on the first electrode 210_2 and a second contact electrode 262_2 disposed on the first insulating layer 510 and the light emitting element 300_2. The second electrode 220_2 may be directly disposed on the second contact electrode 262_2.

[0211] The first contact electrode 261_2 may have a shape substantially the same as that of the first electrode 210_2. That is, like the first electrode 210_2, in a plan view, the first contact electrode 261_2 may have an angled shape in which one side thereof extends in one direction and the other side thereof extends in another direction. However, the present invention is not limited thereto. In some cases, the first contact electrode 261_2 may be formed to be larger than the first electrode 210_2, and may cover the first electrode 210_2, and a portion of the first contact electrode 261_2 may be directly disposed on the first planarization layer 109. In addition, like the first electrode 210_2, the first contact electrode 261_2 may be disposed to correspond to each sub-pixel PXn, and may not be connected to the first contact electrode 261_2 of another adjacent sub-pixel PXn. For example, the first contact electrode 261_2 may form an island pattern over the entire surface of the display area DPA.

[0212] The second contact electrode 262_2 may have a shape substantially the same as that of the second electrode 220_2. That is, the second contact electrode 262_2 may also have an angled shape like the second electrode 220_2 in a plan view, and may be formed to have an area larger than that of the first contact electrode 261_2. However, the second contact electrode 262_2 may be disposed not to overlap with the second voltage line VL2. The second electrode 220_2 may be in direct contact with the second voltage line VL2 in an area where the second contact electrode 262_2 is not disposed.

[0213] The contact electrodes 261_2 and 262_2 may include a conductive material. For example, the contact electrodes 261_2 and 262_2 may include ITO, IZO, ITZO, aluminum (Al), etc. As an example, the contact electrodes 261_2 and 262_2 may include a transparent conductive material, and the light emitted from the light emitting element 300_2 may pass through the contact electrodes 261_2 and 262_2 to travel toward the electrodes 210_2 and 220_2. Since the first electrode 210_2 includes a material having a high reflectivity and the second electrode 220_2 includes a transparent material, the light traveling toward the first electrode 210_2 through the first contact electrode 261_2 may be reflected in an upward direction relative to the first substrate 101, and the light traveling toward the second electrode 220_2 through the second contact electrode 262_2 may pass through the second electrode 220_2 to be emitted in an upward direction relative to the first substrate 101.

[0214] The contact electrode 261_2 and the contact electrode 262_2 may be provided at least in a region where each of the electrodes 210_2 and 220_2 and the light emitting element 300_2 are in contact with each other. Fig.13 Like the light emitting element 300_1, in the case of the light emitting element 300_2 in which the electrode layer 370 is omitted, the contact resistance between the electrodes 210_2 and 220_2 and the light emitting element 300_2 increases, and the contact electrodes 261_2 and 262_2 can reduce the contact resistance therebetween. The light emitting element 300_2 can directly contact the contact electrodes 261_2 and 262_2, and can be electrically connected to the electrodes 210_2 and 220_2 through the contact electrodes 261_2 and 262_2.

[0215] As described above, the light emitting element 300_2 may include a first type light emitting element 300A_2 disposed so that the first semiconductor layer 310 faces the first electrode 210_2 and a second type light emitting element 300B_2 disposed so that the second semiconductor layer 320 faces the first electrode 210_2. In this case, in the first type light emitting element 300A_2, the first semiconductor layer 310 may be in direct contact with the first contact electrode 261_2, and the second semiconductor layer 320 may be in direct contact with the second contact electrode 262_2. In the second type light emitting element 300B_2, the second semiconductor layer 320 may be in contact with the first contact electrode 261_2, and the first semiconductor layer 310 may be in direct contact with the second contact electrode 262_2.

[0216] At the same time, Fig.15, it is shown that the display device 10_2 includes a light emitting element 300_2 in which the electrode layer 370 is omitted, and the light emitting element 300_2 is electrically connected to the electrodes 210_2 and 220_2 through the contact electrodes 261_2 and 262_2, respectively. However, the present invention is not limited thereto, and even when the light emitting element 300 and the electrode layer 370 are omitted, the light emitting element 300_2 is electrically connected to the electrodes 210_2 and 220_2, respectively. Figure 3 When the electrode layer 370 is included in the display device 10, the contact electrodes 261_2 and 262_2 may also be further provided between the electrodes 210 and 220 and the light emitting element 300, respectively. In this case, in the first type light emitting element 300A, the electrode layer 370 may be in direct contact with the second contact electrode 262_2, and in the second type light emitting element 300B, the electrode layer 370 may be in direct contact with the first contact electrode 261_2. A description thereof will be omitted.

[0217] Fig.16 is a cross-sectional view of a light emitting element according to still another embodiment. Fig.17 It is shown that Fig.16 A cross-sectional view of a portion of a display device having a light-emitting element.

[0218] Reference Fig.16 and Fig.17 In the light emitting element 300_3 according to one embodiment, the insulating film 380 may be omitted, and may include only the first semiconductor layer 310, the second semiconductor layer 320, and the active layer 360. In the display device 10_3 according to one embodiment, the electrode layer 370 and the insulating film 380 may be omitted from each of the first type light emitting element 300A_3 and the second type light emitting element 300B_3, and the first semiconductor layer 310, the second semiconductor layer 320, and the active layer 360 may all be in direct contact with the first insulating layer 510_3. Fig.16 and Fig.17 The light emitting element 300_3 and the display device 10_3 are Fig.13 and Fig.14 The light emitting element 300_1 of the embodiment of FIG. 1 is different from the display device 10_1 in that the insulating film 380 is omitted. Hereinafter, repeated description will be omitted, and description will be provided based on the difference from the above.

[0219] The insulating film 380 of the light emitting element 300 is provided to at least surround the outer surface of the active layer 360 to protect the active layer 360. However, the display device 10 according to one embodiment may include a first insulating layer 510 surrounding the outer surface of the light emitting element 300, and the first insulating layer 510 may protect other semiconductor layers of the light emitting element 300 including the active layer 360. The width W' of the light emitting element 300_3 in which the insulating film 380 is omitted may be less than Figure 4However, the light emitting element 300_3 according to one embodiment may have a shape in which the width W′ is greater than the height H, and the area of ​​the active layer 360 may be increased.

[0220] exist Fig.16 and Fig.17 In the light-emitting element 300_3 and the display device 10_3, since the insulating film 380 of the light-emitting element 300_3 is omitted, the first insulating layer 510_3 can perform the function of directly protecting the active layer 360. During the manufacturing process of the display device 10_3, the light-emitting element 300_3 dispersed in the ink Ink can be disposed on the first electrode 210 by precipitation. When the light-emitting element 300_3 can be disposed on the first electrode 210 only by the process of jetting the ink Ink, the risk of damage to the active layer 360 of the light-emitting element 300_3 can be reduced. That is, even when the insulating film 380 is omitted from the light-emitting element 300_3, the active layer 360 is not damaged before the first insulating layer 510_3 is formed. In the display device 10_3 according to one embodiment, even when the insulating film 380 is omitted from the light emitting element 300_3, the risk of damage to the active layer 360 may be low, and the first insulating layer 510_3 may directly contact and protect the outer surface of the active layer 360.

[0221] Meanwhile, the second voltage line VL2 may not necessarily be disposed on the first insulating layer 510_3 . Like the first voltage line VL1 , the second voltage line VL2 may also be disposed on the second interlayer insulating layer 108 .

[0222] Fig.18 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0223] Reference Fig.18 In the display device 10_4 according to one embodiment, the second voltage line VL2_4 may be disposed on the second interlayer insulating layer 108. The second electrode 220_4 may be electrically connected to the second voltage line VL2_4 through a second contact hole CT2 that exposes a portion of an upper surface of the second voltage line VL2_4 through the first insulating layer 510 and the first planarizing layer 109.

[0224] The second voltage line VL2_4 may be electrically connected to the second electrode 220_4, and a driving voltage (e.g., a second power supply voltage) may be applied thereto, thereby driving the light emitting element 300 together with the first voltage line VL1. Even if the second electrode 220_4 is disposed on the first insulating layer 510, when a space for forming a contact hole passing through some insulating layers is provided, the second voltage line VL2_4 may be disposed on another layer instead of the first insulating layer 510. During the manufacturing process of the display device 10_4, the second voltage line VL2_4 may be disposed on the second interlayer insulating layer 108 together with the first voltage line VL1, and a second contact hole CT2 exposing the second voltage line VL2_4 may be formed before forming the second electrode 220_4. The second contact hole CT2 may pass through the first insulating layer 510 and the first planarization layer 109, and the second electrode 220_4 may be in direct contact with the second voltage line VL2_4 exposed through the second contact hole CT2.

[0225] As described above, in the display device 10 according to one embodiment, members disposed on the first planarization layer 109 (eg, the second electrode 220 and the first insulating layer 510 ) may be disposed to have different shapes.

[0226] Fig.19 is a plan view showing a first pixel and a second pixel of a display device according to still another embodiment. Fig. 20 It is along Fig.19 A cross-sectional view taken along line IV-IV'.

[0227] First, refer to Fig.19 and Fig. 20 In the display device 10_5 according to one embodiment, one second electrode 220_5 may be provided to cover a plurality of sub-pixels PXn or pixels PXA and PXB. That is, the second electrode 220_5 provided in each sub-pixel PXn may be integrated into one electrode. Fig.19 and Fig. 20 The display device 10_5 and Figure 2 and Figure 3 The display device 10 of the embodiment of FIG. 1 is different in that the shape of the second electrode 220_5 is different. Hereinafter, repeated description will be omitted, and description will be provided based on the difference from the above-mentioned contents.

[0228] exist Fig.19 and Fig. 20In the display device 10_5 of the embodiment of the present invention, the second electrode 220_5 may extend in the first direction DR1 and the second direction DR2 to be disposed beyond the adjacent sub-pixel PXn. The plane area of ​​the second electrode 220_5 may be formed to be larger than the plane area of ​​each sub-pixel PXn, and one second electrode 220_5 may also be disposed in another sub-pixel PXn. Similar to the first insulating layer 510, the second electrode 220_5 may be disposed on the first insulating layer 510 over the entire surface of the display area DPA.

[0229] As described above, the second electrode 220 disposed in each subpixel PXn may be electrically connected to the second voltage line VL2, and the same electrical signal may be applied to the second electrode 220. Even if one second electrode 220_5 is disposed in a plurality of subpixels PXn, the same electrical signal may be applied to the plurality of subpixels PXn through the second electrode 220_5 electrically connected to the second voltage line VL2_5.

[0230] In addition, since the second electrode 220_5 is set to cover a plurality of sub-pixels PXn, the second voltage line VL2_5 may be set only in some pixels or sub-pixels PXn, and may not be set in some sub-pixels PXn. As shown in the drawings, in the second voltage line VL2_5, the line trunk VLS_5 and the line branch VLP_5 may be set only in the third sub-pixel PX3, and may not be set in other sub-pixels PXn. The second electrode 220_5 may be electrically connected to the second voltage line VL2_5 in the third sub-pixel PX3, but since the second electrode 220_5 may cover other sub-pixels PXn, the same second power supply voltage may be applied to each sub-pixel PXn.

[0231] However, the present invention is not limited thereto. In some cases, since the first insulating layer 510 is separated and disposed for each sub-pixel PXn, an island pattern may be formed on the entire surface of the display area DPA.

[0232] Fig.21 is a plan view showing a first pixel and a second pixel of a display device according to still another embodiment. Fig. 22 It is shown Fig.21 A cross-sectional view of a portion of a display device.

[0233] Reference Fig.21 and Fig. 22In the display device 10_6 according to one embodiment, a plurality of separated first insulating layers 510_6 may be provided in each sub-pixel PXn. The first insulating layer 510_6 may have the same planar shape as that of the first electrode 210. That is, the first insulating layer 510_6 has a shape in which each side thereof extends in the first direction DR1 and the second direction DR2, and may be provided to correspond to each sub-pixel PXn. Fig.21 and Fig. 22 The display device 10_6 and Figure 2 and Figure 3 The display device 10 of the embodiment of FIG. 1 is different in that the first insulating layer 510_6 forms an island pattern. Hereinafter, repeated description will be omitted, and description will be provided based on the difference from the above contents.

[0234] exist Fig.21 and Fig. 22 In the display device 10_6 of FIG. 1 , the first insulating layer 510_6 may be disposed in each sub-pixel PXn. The first insulating layer 510_6 may be disposed to surround the outer surface of the light emitting element 300 disposed on the first electrode 210, and may not be disposed in a region where the light emitting element 300 is not disposed, for example, may not be disposed between the first electrode 210 and the first electrode 210 of another sub-pixel PXn. That is, the first insulating layer 510_6 may not be disposed at the boundary of adjacent sub-pixels PXn, but may be disposed to correspond to each sub-pixel PXn.

[0235] In addition, the first insulating layer 510_6 may be provided to cover the first electrode 210. For example, the first insulating layer 510_6 may be formed to be larger than the first electrode 210 in a plan view to cover the upper surface of the first electrode 210, and may be provided to expose a portion of the first planarization layer 109. Therefore, a portion of the second voltage line VL2_6 including the line trunk portion VLS_6 and the line branch portion VLP_6 may be provided on the first insulating layer 510_6, and another portion of the second voltage line VL2_6 may be directly provided on the first planarization layer 109. However, the present invention is not limited thereto.

[0236] Meanwhile, the display device 10 may further include an insulating layer disposed on the second electrode 220 .

[0237] Fig.23 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0238] Reference Fig.23 According to one embodiment, the display device 10_7 may further include a second insulating layer 520_7 disposed on the second electrode 220 . Fig.23 The display device 10_7 and Figure 3The display device 10 of the embodiment is different in that a second insulating layer 520_7 is further provided.

[0239] The second insulating layer 520_7 may be provided to cover a member provided on the first planarization layer 109. For example, the second insulating layer 520_7 may be provided to cover the second electrode 220, the first insulating layer 510, and the second voltage line VL2. The second insulating layer 520_7 may include a material substantially the same as that of the first insulating layer 510, and may be used to protect the member from external influences. That is, the second insulating layer 520_7 may include an inorganic insulating material or an organic insulating material, and may be made of a transparent insulating material so that light emitted from the light emitting element 300 may be transmitted through the second insulating layer 520_7. In the accompanying drawings, the second insulating layer 520_7 is shown as being directly provided on the second electrode 220 to cover the first insulating layer 510 and the second voltage line VL2, but the present invention is not limited thereto. As described above, when the second electrode 220 is integrated with the second electrode 220 of another sub-pixel PXn and is completely provided on the first insulating layer 510 ( Fig.19 220_5), the second insulating layer 520_7 may be provided to cover only the second electrode 220 and the second voltage line VL2 without contacting the first insulating layer 510. Optionally, when the first insulating layer 510 is provided to correspond to each sub-pixel PXn to form an island pattern ( Fig.21 ” 510_6 ” in the figure), the second insulating layer 520_7 can be directly disposed on the first planarization layer 109 exposed because the first insulating layer 510 is not disposed.

[0240] The shape of the second insulating layer 520_7 is not particularly limited as long as the second insulating layer 520_7 is provided to protect the member provided on the first planarization layer 109. For example, the second insulating layer 520_7 may be provided over the entire surface of the display area DPA on the first planarization layer 109, and may be provided to correspond to each sub-pixel PXn to form an island pattern or a linear pattern like the first electrode 210.

[0241] Fig.24 and Fig.25 1 and 2 are plan views each showing a first pixel and a second pixel of a display device according to still another embodiment.

[0242] Reference Fig.24 In the display device 10_7 according to an embodiment, the second insulating layer 520_7 may be disposed completely throughout the display area DPA. Fig.25 , in the display device 10_8 according to one embodiment, the second insulating layer 520_8 may be disposed to correspond to each sub-pixel PXn to form an island pattern or a linear pattern. Fig.24 and Fig.25 The shape of each of the second insulating layers 520_7 and 520_8 may be substantially the same as the shape of the first insulating layer 510 described above. Fig.24 As in the display device 10_7 of FIG. 1 , the second insulating layer 520_7 may be disposed over a plurality of sub-pixels PXn to cover all of them, or may be disposed over a plurality of sub-pixels PXn to cover all of them. Fig.25 As in the display device 10_8 of FIG. 1 , the second insulating layer 520_8 may be disposed in each subpixel PXn to cover only the second electrode 220 disposed in each subpixel PXn. The description thereof is similar to the description provided above for the first insulating layer 510, and thus the detailed description thereof will be omitted.

[0243] The display device 10 may include a first insulating layer 510 surrounding the light emitting element 300 and a second insulating layer 520_7 or 520_8 disposed on the second electrode 220. In the light emitting element 300, the direction in which the plurality of semiconductor layers are sequentially disposed may be parallel to the direction perpendicular to the upper surface of the first substrate 101, so that the light emitted from the light emitting element 300 may be emitted in an upward direction relative to the first substrate 101. Here, the light generated from the active layer 360 of the light emitting element 300 may be emitted to both ends and side surfaces of the light emitting element 300. That is, in some cases, the light emitted from the light emitting element 300 passes through the first insulating layer 510 or the second insulating layer 520_7 or 520_8 and is emitted from each sub-pixel PXn. According to one embodiment, the display device 10 may further include an optical member disposed on the first insulating layer 510 or the second insulating layer 520_7 or 520_8, so that the characteristics of the light emitted from the light emitting element 300 or the light efficiency may be improved.

[0244] Fig.26 and Fig. 27 are cross-sectional views each showing a portion of a display device according to still another embodiment.

[0245] Reference Fig.26 and Fig. 27 According to an embodiment, the display device 10_9 and the display device 10_10 may further include scatterers 710_9 and 710_10 both disposed in the first insulating layer 510_9 or the second insulating layer 520_10. Fig.26 In the display device 10_9 of FIG. 1 , the scatterer 710_9 is shown to be disposed in the first insulating layer 510_9 and Fig. 27 In the display device 10_10 of FIG. 1 , the scatterer 710_10 is shown as being disposed in the second insulating layer 520_10. In the following, repeated description will be omitted and the description will be made as follows. Fig.26 The embodiments are taken as representatives.

[0246] Fig.26The display device 10_9 may further include a scatterer 710_9 disposed in the first insulating layer 510_9. The scatterer 710_9 may be included in the first insulating layer 510_9 in a dispersed state, and may have a refractive index different from that of the first insulating layer 510_9, and form an optical interface with the first insulating layer 510_9. For example, the scatterer 710_9 may be a light scattering particle. The material of the scatterer 710_9 may not be particularly limited as long as the material can scatter at least a portion of the transmitted light. For example, the scatterer 710_9 may be a metal oxide particle or an organic particle. Examples of metal oxides may include titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ), aluminum oxide (Al 2 O 3 ), indium oxide (In 2 O 3 )、ZnO、SnO 2 ) etc. Examples of the material of the organic particles may include acrylic resin, polyurethane resin, etc. The scatterer 710_9 may scatter light in random directions irrelevant to the incident direction of the incident light without substantially changing the wavelength of the light passing through the first insulating layer 510_9.

[0247] Therefore, some of the light emitted from the light emitting element 300 may be incident on the scatterer 710_9 provided in the first insulating layer 510_9 to be scattered by the scatterer 710_9. The scatterer 710_9 may scatter the light emitted from the light emitting element 300 so that the light emitted from the light emitting element 300 does not travel only in a specific direction, and the display device 10_9 may further include the scatterer 710_9 to emit light having a uniform density.

[0248] exist Fig. 27 In the display device 10_10 of FIG. 1 , the scatterer 710_10 may be disposed in the second insulating layer 520_10. Light emitted from the light emitting element 300 may be emitted through the second insulating layer 520_10, and the scatterer 710_10 may scatter the light incident on the second insulating layer 520_10.

[0249] Fig.28 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0250] Reference Fig.28, the display device 10_11 according to one embodiment may further include a diffusion sheet 800_11 disposed on the second insulating layer 520_7. The diffusion sheet 800_11 may be used to diffuse the light emitted from the light emitting element 300. The light generated by the active layer 360 of the light emitting element 300 may be emitted to both ends of the light emitting element 300, and may be incident on the diffusion sheet 800_11 through the second insulating layer 520_7. The diffusion sheet 800_11 may diffuse the incident light in random directions without directivity, and guide the light emitted from the display device 10_11 to travel not only in a specific direction.

[0251] Meanwhile, as described above, the light emitting element 300 of the display device 10 may emit light of a specific wavelength range. Here, the light emitting element 300 provided in each sub-pixel PXn may emit light of a different wavelength range, but is not limited thereto, and may emit light of the same wavelength range. The display device 10 according to one embodiment includes a light emitting element 300 that emits light of the same wavelength range for each sub-pixel PXn, and may further include a wavelength conversion material configured to convert the wavelength of light emitted from the light emitting element 300. Therefore, the display device 10 may display light of different colors for each sub-pixel PXn.

[0252] Fig.29 is a plan view showing a first pixel and a second pixel of a display device according to still another embodiment.

[0253] Reference Fig.29 In addition to the scatterer 710_12, the display device 10_12 according to one embodiment may further include wavelength conversion materials 720_12 and 730_12. The wavelength conversion materials 720_12 and 730_12 may include a first wavelength conversion material 720_12 disposed in the second sub-pixel PX2 and the fifth sub-pixel PX5 and a second wavelength conversion material 730_12 disposed in the third sub-pixel PX3 and the sixth sub-pixel PX6. The scatterer 710_12 may be disposed in each of the first sub-pixel PX1 and the fourth sub-pixel PX4. As described above, the scatterer 710_12 and the wavelength conversion materials 720_12 and 730_12 may be disposed in the first insulating layer 510 or the second insulating layer 520_7. In particular, when the first insulating layer 510 and the second insulating layer 520_7 are both disposed to correspond to the sub-pixel PXn to form an island pattern or a linear pattern, the scatterer 710_12 or the wavelength conversion materials 720_12 and 730_12 may be selectively disposed in a specific sub-pixel PXn. The description of the layer in which the scatterer 710_12 and the wavelength conversion materials 720_12 and 730_12 are disposed is the same as the above description, and therefore, hereinafter, the wavelength conversion materials 720_12 and 730_12 will be described in detail.

[0254] The wavelength conversion materials 720_12 and 730_12 may convert or transform incident light having a specific wavelength range into light having a different wavelength range. For example, the first wavelength conversion material 720_12 may convert light of a first color emitted from the light emitting element 300 into light of a second color, and the second wavelength conversion material 730_12 may convert light of the first color into light of a third color. Even when each sub-pixel PXn of the display device 10_12 includes only a light emitting element 300 emitting light of a first color, the display device 10_12 may further include a scatterer 710_12 and wavelength conversion materials 720_12 and 730_12, so that each pixel may emit light of a second color and a third color.

[0255] In some embodiments, the wavelength conversion materials 720_12 and 730_12 may each have a spherical shape or an elliptical shape, but the shape thereof is not particularly limited. The wavelength conversion materials 720_12 and 730_12 may be quantum dots, quantum rods, phosphor substances, etc., and as an example, the wavelength conversion materials 720_12 and 730_12 may be quantum dots that emit light having a specific wavelength range when electrons transition from a conduction band to a valence band.

[0256] Quantum dots can be semiconductor nanocrystal materials. Quantum dots can have specific band gaps depending on their composition and size. Therefore, quantum dots can absorb light and then emit light with an intrinsic wavelength. Examples of semiconductor nanocrystals of quantum dots can include Group IV nanocrystals, Group II-VI compound nanocrystals, Group III-V compound nanocrystals, Group IV-VI compound nanocrystals, and combinations thereof.

[0257] The II-VI compound may be selected from the group consisting of: a binary compound selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; a binary compound selected from the group consisting of InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnP, CdZnS ... Ternary compounds selected from the group consisting of nSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0258] The III-V compound can be selected from the group consisting of: a binary compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and a mixture thereof; a ternary compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb and a mixture thereof; and a quaternary compound selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and a mixture thereof.

[0259] The IV-VI compound may be selected from the group consisting of: a binary compound selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; a ternary compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and a quaternary compound selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. The IV element may be selected from the group consisting of Si, Ge and mixtures thereof. The IV compound may be a binary compound selected from the group consisting of SiC, SiGe and mixtures thereof.

[0260] Here, the binary compound, ternary compound or quaternary compound may be present in the particle at a uniform concentration, or may be present in the same particle at a partially different concentration distribution. In addition, the binary compound, ternary compound or quaternary compound may have a core-shell structure in which one quantum dot surrounds another quantum dot. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center.

[0261] In some embodiments, the quantum dot may have a core-shell structure including a core containing the above-mentioned nanocrystals and a shell surrounding the core. The shell of the quantum dot can be used as a protective layer for maintaining semiconductor properties by preventing chemical modification of the core, and as a charging layer for imparting electrophoretic properties to the quantum dot. The shell can be a single layer or a multilayer. The interface between the core and the shell can have a concentration gradient in which the concentration of the element present in the shell decreases toward the center. Examples of the shell of the quantum dot may include metal or non-metal oxides, semiconductor compounds, or combinations thereof.

[0262] For example, examples of metal or non-metal oxides may include: binary compounds such as SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 and NiO; or ternary compounds such as MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 and CoMn 2 O 4 , but the present invention is not limited to this.

[0263] In addition, examples of semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc., but the present invention is not limited thereto.

[0264] When the wavelength conversion materials 720_12 and 730_12 include quantum dots, the diameter of each of the wavelength conversion materials 720_12 and 730_12 may be in the range of from several nanometers (nm) to tens of nanometers (nm). As an example, the diameter of each of the wavelength conversion materials 720_12 and 730_12 may be in the range of 1% to 10% of the diameter of the light emitting element 300. However, the present invention is not limited thereto.

[0265] The display device 10_12 according to one embodiment may include a light emitting element 300 emitting light of the same color, and wavelength conversion materials 720_12 and 730_12 configured to convert or transform the color of light emitted from the light emitting element 300. The wavelength conversion materials 720_12 and 730_12 may be included in the first insulating layer 510 or the second insulating layer 520_7, and different types of wavelength conversion materials 720_12 and 730_12 or scatterers 710_12 may be provided in different sub-pixels PXn. Even if the same type of light emitting element 300 is included, each sub-pixel PXn of the display device 10_12 may emit light of different colors.

[0266] Meanwhile, the light emitting element 300 may include an active layer 360 having different compositions and a greater number of semiconductor layers to emit light of different colors other than the light of the first color which is blue. In this case, in the display device 10, different types of light emitting elements 300 may be provided in each sub-pixel PXn, and only the scatterer may be provided in the first insulating layer 510 or the second insulating layer 520_7.

[0267] Fig.30 is a cross-sectional view of a light emitting element according to still another embodiment.

[0268] Reference Fig.30 According to an embodiment, the light emitting element 300' may further include a third semiconductor layer 330' disposed between the first semiconductor layer 310' and the active layer 360', and a fourth semiconductor layer 340' and a fifth semiconductor layer 350' disposed between the active layer 360' and the second semiconductor layer 320'. Fig.30 The light emitting element 300' and Figure 4 The light emitting element 300 of the embodiment of the present invention is different in that it further includes a plurality of semiconductor layers 330', 340' and 350', and the active layer 360' includes different elements. In addition, the arrangement and structure of the first electrode layer 371' and the insulating film 380' may be different from those of the embodiment of the present invention. Figure 4 The arrangement and structure of the electrode layer 370 and the insulating film 380 are substantially similar. The first electrode layer 371' is disposed on the second semiconductor layer, and the second electrode layer 372' is disposed below the first semiconductor layer. Hereinafter, repeated descriptions will be omitted, and descriptions will be provided based on differences from the above.

[0269] exist Figure 4 In the light emitting element 300, the active layer 360 may include nitrogen (N) to emit blue light or green light. Fig.30The light emitting element 300' may be a semiconductor in which each of the active layer 360' and other semiconductor layers includes at least phosphorus (P). That is, the light emitting element 300' according to one embodiment may emit red light in a central wavelength range from 620nm to 752nm. However, the central wavelength range of red light is not limited to the above range, and it should be understood that the central wavelength range includes all wavelength ranges that can be identified as red in the art.

[0270] Specifically, when the first semiconductor layer 310' is an n-type semiconductor layer and the light emitting element 300' emits red light, the first semiconductor layer 310' may include a semiconductor layer having a chemical formula In x Al y Ga 1-x-y P (0≤x≤1, 0≤y≤1, and 0≤x+y≤1). For example, the first semiconductor layer 310' may include at least one selected from n-type doped InAlGaP, GaP, AlGaP, InGaP, AlP and InP. The first semiconductor layer 310' may be doped with a first conductive dopant, and as an example, the first conductive dopant may include Si, Ge, Sn, Se, etc. In an embodiment, the first semiconductor layer 310' may be n-AlGaInP doped with n-type Si. The thickness of the first semiconductor layer 310' may be in the range of 0.1μm to 0.5μm, but the present invention is not limited thereto.

[0271] When the second semiconductor layer 320' is a p-type semiconductor layer and the light emitting element 300' emits red light, the second semiconductor layer 320' may include a layer having a chemical formula In x Al y Ga 1-x-y P (0≤x≤1, 0≤y≤1, and 0≤x+y≤1) semiconductor material. For example, the second semiconductor layer 320' may include at least one selected from p-type doped InAlGaP, GaP, AlGaP, InGaP, AlP and InP. The second semiconductor layer 320' may be doped with a second conductive dopant, and as an example, the second conductive dopant may include Mg, Zn, Ca, Ba, etc. In an embodiment, the second semiconductor layer 320' may be p-GaP doped with p-type Mg. The thickness of the second semiconductor layer 320' may be in the range of 0.08μm to 0.25μm, but the present invention is not limited thereto.

[0272] The active layer 360' may be disposed between the first semiconductor layer 310' and the second semiconductor layer 320'. Figure 4 The active layer 360 is the same, Fig.30The active layer 360' may also include a material having a single quantum well structure or a multiple quantum well structure to emit light in a specific wavelength range. As an example, when the active layer 360' emits light in a red wavelength range, the active layer 360' may include a material such as AlGaP or AlInGaP. In particular, when the active layer 360' has a multiple quantum well structure in which quantum layers and well layers are alternately stacked, the quantum layers may include materials such as AlGaP or AlInGaP, and the well layers may include materials such as GaP or AlInP. In an embodiment, the active layer 360' may include AlGaInP as a quantum layer and AlInP as a well layer, so that the active layer 360' emits red light having a central wavelength range of 620nm to 752nm.

[0273] Fig.30 The light emitting element 300' may include a cladding layer disposed adjacent to the active layer 360'. As shown in the drawings, the third semiconductor layer 330' and the fourth semiconductor layer 340' disposed above and below the active layer 360' and between the first semiconductor layer 310' and the second semiconductor layer 320' may be cladding layers.

[0274] The third semiconductor layer 330' may be disposed between the first semiconductor layer 310' and the active layer 360'. The third semiconductor layer 330' may be an n-type semiconductor like the first semiconductor layer 310', and as an example, the third semiconductor layer 330' may include a semiconductor having a chemical formula In x Al y Ga 1-x-y P (0≤x≤1, 0≤y≤1, and 0≤x+y≤1). In an embodiment, the first semiconductor layer 310' may be n-AlGaInP, and the third semiconductor layer 330' may be n-AlInP. However, the present invention is not limited thereto.

[0275] The fourth semiconductor layer 340' may be disposed between the active layer 360' and the second semiconductor layer 320'. The fourth semiconductor layer 340' may be a p-type semiconductor like the second semiconductor layer 320', and as an example, the fourth semiconductor layer 340' may include a semiconductor having a chemical formula of In x Al y Ga 1-x-y A semiconductor material of P (0≤x≤1, 0≤y≤1, and 0≤x+y≤1). In an embodiment, the second semiconductor layer 320 ′ may be p-GaP, and the fourth semiconductor layer 340 ′ may be p-AlInP.

[0276] The fifth semiconductor layer 350' may be disposed between the fourth semiconductor layer 340' and the second semiconductor layer 320'. The fifth semiconductor layer 350' may include a p-type doped semiconductor like the second semiconductor layer 320' and the fourth semiconductor layer 340'. In some embodiments, the fifth semiconductor layer 350' may be used to reduce the difference in lattice constant between the fourth semiconductor layer 340' and the second semiconductor layer 320'. That is, the fifth semiconductor layer 350' may be a TSBR layer. As an example, the fifth semiconductor layer 350' may include p-GaInP, p-AlInP, p-AlGaInP, etc., but the present invention is not limited thereto.

[0277] The first electrode layer 371' and the second electrode layer 372' may be disposed on one surface of the first semiconductor layer 310' and one surface of the second semiconductor layer 320', respectively. The first electrode layer 371' may be disposed on the lower surface of the first semiconductor layer 310', and the second electrode layer 372' may be disposed on the upper surface of the second semiconductor layer 320'. Fig.30 The light emitting element 300' can also be connected with Figure 4 The light emitting element 300 is manufactured in substantially the same manner.

[0278] Fig.31 is a plan view showing a first pixel and a second pixel of a display device according to still another embodiment.

[0279] Reference Fig.31 According to an embodiment, the display device 10_13 may include different types of light emitting elements 300, for example, a first light emitting element 301, a second light emitting element 302, and a third light emitting element 303. The first light emitting element 301 may be disposed in the first sub-pixel PX1 and the fourth sub-pixel PX4, the second light emitting element 302 may be disposed in the second sub-pixel PX2 and the fifth sub-pixel PX5, and the third light emitting element 303 may be disposed in the third sub-pixel PX3 and the sixth sub-pixel PX6. The first light emitting element 301 and the second light emitting element 302 may have the same Figure 4 The third light emitting element 303 may have the same structure as the light emitting element 300 and emit light of the first color and the second color respectively. Fig.30 As an example, the display device 10_13 may include a first light emitting element 301 emitting light of a first color of blue, a second light emitting element 302 emitting light of a second color of green, and a third light emitting element 303 emitting light of a third color of red.

[0280] As described above, the light emitting element 300 may generate light of different colors according to the composition of the active layer 360, and in some cases, may include a greater number of semiconductor layers. In the display device 10_13, different types of light emitting elements 301, 302, and 303 may be provided in each sub-pixel PXn, and each of the light emitting elements 301, 302, and 303 may emit light of different colors. Although not shown in the drawings, even when the wavelength conversion material is not provided, the light emitting elements 301, 302, and 303 may each emit light of different colors, and the display device 10_13 may further include a scatterer to emit light having a uniform density for each sub-pixel PXn.

[0281] Fig.32 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0282] Reference Fig.32 In the display device 10_14 according to an embodiment, the first electrode 210_14 may include a plurality of layers. The first electrode 210_14 may include a layer including a transparent material and a layer including a material having a high reflectivity, so that light emitted from the light emitting element 300 may be reflected in an upward direction relative to the first substrate 101. Fig.32 The display device 10_14 and Figure 3 The display device 10 of the embodiment of FIG. 1 is different in that the first electrode 210_14 includes a plurality of layers. Hereinafter, repeated descriptions will be omitted, and descriptions will be provided based on differences from the above contents.

[0283] exist Fig.32 In the display device 10_14, the first electrode 210_14 may include a first electrode base layer 210R_14 and a first electrode upper layer 210T_14. The first electrode base layer 210R_14 and the first electrode upper layer 210T_14 may each include a conductive material to constitute one first electrode 210_14. However, the first electrode base layer 210R_14 may include a conductive material having a high reflectivity, and the first electrode upper layer 210T_14 may include a transparent conductive material. Among the light emitted from the light emitting element 300, the light traveling toward the first electrode 210_14 may pass through the transparent first electrode upper layer 210T_14 to travel to the first electrode base layer 210R_14. The first electrode base layer 210R-14 may reflect the incident light in an upward direction relative to the first substrate 101.

[0284] As described above, the first electrode 210 may include a conductive material having a high reflectivity, and in the display device 10_14 according to an embodiment, the first electrode 210_14 may include a plurality of layers, and at least one of the plurality of layers may include a conductive material having a high reflectivity. In the display device 10, the light emitting element 300 may be arranged so that the direction along which the plurality of semiconductor layers are stacked is perpendicular to the upper surface of the first substrate 101, and the light emitted from the light emitting element 300 may be emitted to both ends of the light emitting element 300. Among the light, the light traveling in the upward direction relative to the first substrate 101 may be emitted to the outside through the second electrode 220. On the other hand, the light traveling toward the first electrode 210_14 may be reflected by the first electrode base layer 210R_14 to travel in the upward direction relative to the first substrate 101. Therefore, the display device 10_14 includes the first electrode 210_14 composed of the first electrode base layer 210R_14 and the first electrode upper layer 210T_14, so that the light efficiency of each sub-pixel PXn can be improved.

[0285] Meanwhile, in the above display device 10, the light emitting elements 300 may be arranged randomly on the first electrode 210. However, the present invention is not limited thereto, and in some embodiments, in the display device 10, the light emitting elements 300 on the first electrode 210 may be arranged or aligned along a specific direction.

[0286] Fig.33 is a plan view showing a first pixel and a second pixel of a display device according to still another embodiment. Fig.34 It is along Fig.33 A cross-sectional view taken along line V-V'.

[0287] Reference Fig.33 and Fig.34 In the display device 1015 according to one embodiment, a plurality of light emitting elements 300 may be arranged in one direction. The first electrode 210_15 of the display device 10_15 may include a groove portion GP formed to extend in one direction and formed by partially recessing its upper surface, and the light emitting element 300 may be disposed in the groove portion GP of the first electrode 210_15. Figure 2 Unlike the display device 10 of the embodiment, the second electrode 220_15 has a shape extending along the direction in which the light emitting element 300 is arranged, and may be provided on the light emitting element 300. That is, in the display device 10_15 according to one embodiment, the first electrode 210_15 may include the groove portion GP, ​​and the arrangement of the light emitting element 300 and the shape of the second electrode 220_15 may vary according to the shape of the groove portion GP. Fig.33 and Fig.34 The display device 10_15 and Figure 2 and Figure 3 The display device 10 of the embodiment is different in that the shape of each of the first electrode 210_15 and the second electrode 220_15 and the arrangement of the light emitting element 300 are different. Hereinafter, repeated description will be omitted, and description will be provided based on the difference from the above.

[0288] The first electrode 210_15 may include a groove portion GP formed by partially recessing its upper surface, and the groove portion GP may be formed to extend in one direction. For example, the groove portion GP may be formed in the first electrode 210_15 to extend in the second direction DR2. However, the present invention is not limited thereto, and the groove portion GP may extend in a direction different from the second direction DR2, for example, in the first direction DR1 or in an inclined direction relative to the groove portion GP. In the drawings, the groove portion GP of the first electrode 210_15 is shown to extend in the second direction DR2 and to be formed in two columns, but the present invention is not limited thereto. The groove portion GP of the first electrode 210_15 may be formed in a larger number or in a larger number of columns.

[0289] Since the first electrode 210_15 includes a groove portion GP, ​​the light emitting element 300 may be disposed in the groove portion GP of the first electrode 210_15. By partially recessing the upper surface of the first electrode 210_15, the groove portion GP may have a small height, and when the light emitting element 300 is dispersed and precipitated in the ink, the light emitting element 300 may be preferentially disposed in the groove portion GP formed in the first electrode 210_15. In some embodiments, when the ink in which the light emitting element 300 is dispersed is ejected onto the first electrode 210_15, and then a physical force is applied to the ink or an electric field is formed, the light emitting element 300 may be disposed at a predetermined position of the first electrode 210_15 while changing the position. Since the groove portion GP formed in the first electrode 210_15 has a height lower than the upper surface of the first electrode 210_15 and forms a stepped portion, the light emitting element 300 may be deposited or disposed in the groove portion GP by a force applied from the outside. That is, the groove portion GP of the first electrode 210_15 may guide the region in which the light emitting element 300 is disposed, and thus a plurality of light emitting elements 300 may be arranged in one direction according to the shape of the groove portion GP.

[0290] The first insulating layer 510 may be disposed on the first electrode 210_15 and the first planarization layer 109 to surround the outer surface of the light emitting element 300. Figure 3Unlike the display device 10 of the embodiment of the present invention, the thickness of the first insulating layer 510 may be greater than the sum of the height of the light-emitting element 300 and the thickness of the first electrode 210_15. That is, the first insulating layer 510 may be arranged to surround and cover the outer surface of the light-emitting element 300. However, a contact hole may be formed in the first insulating layer 510, which passes through the first insulating layer 510 and exposes a portion of the upper surface of the light-emitting element 300, and the second electrode 220_15 may contact the light-emitting element 300 through the contact hole. However, the present invention is not limited thereto. In some embodiments, Figure 3 Like the display device 10 of FIG. 1 , the first insulating layer 510 may have a thickness less than the sum of the height of the light emitting element 300 and the thickness of the first electrode 210_15, and one end surface of the light emitting element 300 may be exposed. In addition, the first insulating layer 510 may be formed as a single layer on the first planarization layer 109 to cover a plurality of sub-pixels PXn, and in some cases, the first insulating layer 510 may correspond to each sub-pixel PXn to form an island pattern or a linear pattern. The description thereof may be the same as above.

[0291] The second electrode 220_15 may be disposed on the first insulating layer 510 and the light emitting element 300, and may extend in a direction along the direction in which the light emitting element 300 is arranged. For example, the second electrode 220_15 may have a shape extending in the second direction DR2 according to the shape of the groove portion GP of the first electrode 210_15. As shown in the drawings, the second electrode 220_15 may be disposed in each sub-pixel PXn, and may be disposed in two columns having a shape extending in the second direction DR2 corresponding to the position in which the light emitting element 300 is disposed. That is, the second electrode 220_15 may extend in the second direction DR2, and may be disposed to overlap with the groove portion GP of the first electrode 210_15. However, the present invention is not limited thereto. According to the arrangement of the light emitting element 300 or the shape of the groove portion GP of the first electrode 210_15, the second electrode 220_15 may have a shape extending in different directions, or may be disposed in more columns. In addition, as described above, the second electrode 220_15 does not have to be provided in each sub-pixel PXn, and the second electrode 220_15 provided in each sub-pixel PXn may be integrated such that one second electrode 220_15 may also be provided in other sub-pixels PXn.

[0292] The second electrode 220_15 may be substantially disposed on the first insulating layer 510, and may be disposed to correspond to a position in which the light emitting element 300 is disposed. For example, the second electrode 220_15 may be disposed on the first insulating layer 510 in a region overlapping the light emitting element 300. The second electrode 220_15 may be in contact with the light emitting element 300 through a contact hole that passes through the first insulating layer 510 and exposes a portion of the upper surface of the light emitting element 300. According to one embodiment, the width of the second electrode 220_15 may be smaller than the width of each of the first electrode 210_15 and the light emitting element 300. Since the second electrode 220_15 may be in contact with a portion of the light emitting element 300 exposed through the contact hole of the first insulating layer 510, the second electrode 220_15 may not necessarily be formed to have a width greater than the width of the light emitting element 300. However, the present invention is not limited thereto, and the width of the second electrode 220_15 may be smaller than the width of the first electrode 210_15 and greater than the width of the light emitting element 300.

[0293] and Figure 2 Different from the embodiment of the present invention, the second voltage line VL2_15 may have a shape extending in one direction, and the line branch portion ( Figure 2 ” VLP” in the figure). For example, similar to the line trunk VLS that will be set throughout the plurality of sub-pixels PXn, the second voltage line VL2_15 may extend in the first direction DR1. Although not shown in the drawings, the second electrode 220_15 may extend in one direction to directly contact the second voltage line VL2_15. However, the present invention is not limited thereto. As will be described below, the arrangement and shape of the second voltage line VL2_15 may vary according to the shape of the second electrode 220_15.

[0294] Fig.33 and Fig.34 The display device 10_15 includes a first electrode 210_15 and a groove portion GP, ​​and the light emitting element 300 may be disposed in the groove portion GP of the first electrode 210_15. During the manufacturing process of the display device 10_15, the groove portion GP may guide the light emitting element 300 dispersed in the ink to be disposed at a specific position, and the light emitting element 300 may be arranged along the groove portion GP of the first electrode 210_15. In the display device 10_15, the light emitting element 300 disposed in each sub-pixel PXn may be arranged in one direction according to the shape of the groove portion GP, ​​and the second electrode 220_15 may have a specific shape according to the arrangement of the light emitting element 300.

[0295] Fig.35 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0296] Reference Fig.35In the display device 10_16 according to one embodiment, the light emitting elements 300 may be arranged in one direction, and the second electrode 220_16 may be provided to cover one exposed end surface of the light emitting element 300. Fig.34 Unlike the display device 10_15 of the embodiment of the present invention, the thickness of the first insulating layer 510 may be less than the sum of the height of the light emitting element 300 and the height of the first electrode 210_16, and one end surface of the light emitting element 300 may be exposed. The width of the second electrode 220_16 may be formed to be greater than the width of the light emitting element 300, so that the second electrode 220_16 may be provided to cover the exposed one end surface of the light emitting element 300. Fig.35 The display device 10_16 and Fig.34 The display device 10_15 is different in that the width of the second electrode 220_16 and the thickness of the first insulating layer 510 are different. Since the rest of the description is the same, redundant description will be omitted.

[0297] At the same time, Fig.34 As in the embodiment, when the groove portion GP is formed in the first electrode 210_16, the light emitting element 300 can be guided to be disposed at a specific position. However, a portion of the upper surface of the first electrode 210_16 does not need to be recessed, but the light emitting element 300 can be disposed at a specific position by an insulating layer disposed on the first electrode 210_16. According to one embodiment, the display device 10 may further include an insulating layer disposed on the first electrode 210 so that the light emitting element 300 can be arranged in one direction.

[0298] Fig.36 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0299] Reference Fig.36 According to one embodiment, the display device 10_17 may further include a third insulating layer 530_17 disposed on the first electrode 210_17. The third insulating layer 530_17 may include an opening OP exposing a portion of the upper surface of the first electrode 210_17, and the light emitting element 300 may be disposed in the opening OP to be electrically connected to the first electrode 210_17.

[0300] In detail, the third insulating layer 530_17 may be disposed on the first electrode 210_17 by including an opening OP that exposes a portion of the upper surface of the first electrode 210_17. As an example, as shown in the drawings, the third insulating layer 530_17 may be disposed only on the first electrode 210_17, but the present invention is not limited thereto. As long as the third insulating layer 530_17 may expose a portion of the first electrode 210_17, various modifications may be made to the arrangement of the third insulating layer 530_17. For example, similar to the first insulating layer 510_17, the third insulating layer 530_17 may be completely disposed on the first planarization layer 109 including the first electrode 210_17, and the opening OP may be formed to overlap with the first electrode 210_17.

[0301] The third insulating layer 530_17 includes an opening OP, and thus a stepped portion may be formed in the upper surface of the third insulating layer 530_17. Fig.34 The groove portion GP in the first electrode 210_15, the opening OP of the third insulating layer 530_17 can guide the light emitting element 300 to be set at a specific position, for example, to be set on the first electrode 210_17 exposed by the opening OP, and the light emitting element 300 can be arranged in a specific direction according to the shape of the opening OP. When the opening OP of the third insulating layer 530_17 has a shape extending in one direction, a plurality of light emitting elements 300 can be arranged along the one direction along which the opening OP extends. However, the present invention is not limited thereto, and the opening OP formed in the third insulating layer 530_17 can have various arrangements and structures. The display device 10_17 according to one embodiment may also include a third insulating layer 530_17 in which the opening OP is formed to guide the light emitting element 300 to be set at a specific position.

[0302] Meanwhile, as described above, the same electrical signal may be applied to the light emitting element 300 of each of the sub-pixels PXn through the second electrode 220. Regardless of whether the light emitting elements 300 are arranged in one direction, the second electrode 220 may be formed to be larger than the first electrode 210 of each sub-pixel PXn, or may be disposed to exceed another adjacent sub-pixel PXn. In addition, the description of the second electrode 220_17, etc. is the same as the above description, and redundant description will be omitted.

[0303] Fig.37 and Fig.38 1 and 2 are plan views each showing a first pixel and a second pixel of a display device according to still another embodiment.

[0304] Reference Fig.37, in the display device 10_18 according to one embodiment, the light emitting element 300 provided in each sub-pixel PXn may be arranged in one direction, and the second electrode 220_18 may extend in one direction to be provided in each of the pixels PXA and PXB and cover a plurality of sub-pixels PXn. That is, the light emitting elements 300 provided in different sub-pixels may be electrically connected to the same second electrode 220_18. In this case, the second voltage line VL2_18 may not be provided in each sub-pixel PXn, and may be provided only in some sub-pixels PXn electrically connected to the second electrode 220_18. Fig.37 The display device 10_18 and Fig.33 The display device 10_15 of FIG. 10_15 is different in that the shape of the second electrode 220_18 and the arrangement of the second voltage line VL2_18 are different. Hereinafter, repeated description will be omitted, and description will be provided based on the difference from the above.

[0305] The second electrode 220_18 may be electrically connected to the second voltage line VL2_18 to apply the same electrical signal to a plurality of sub-pixels PXn. Thus, one second electrode 220_18 may be arranged throughout some of the sub-pixels PXn to simultaneously apply the same electrical signal to some of the sub-pixels PXn. In the accompanying drawings, the second electrode 220_18 is shown as being arranged to cover each of the pixels PXA and PXB. For example, one second electrode 220_18 may be arranged to have a width greater than that of the first electrode 210_18 and to extend in the first direction DR1, but the present invention is not limited thereto. The second electrode 220_18 may not necessarily extend in the first direction DR1, and may be formed to cover a plurality of sub-pixels PXn to form an island pattern or a linear pattern throughout the entire surface of the display area DPA.

[0306] Meanwhile, the second electrode 220_18 may be formed to have a greater width and may be disposed to cover a greater number of sub-pixels PXn or pixels PXA and PXB.

[0307] Reference Fig.38, in the display device 10_19 according to one embodiment, one second electrode 220_19 may be provided in a larger number of sub-pixels PXn and pixels PXA and PXB. One second electrode 220_19 may be provided throughout the first pixel PXA and the second pixel PXB, and a plurality of light emitting elements 300 provided in the first sub-pixel PX1, the second sub-pixel PX2, the third sub-pixel PX3, the fourth sub-pixel PX4, the fifth sub-pixel PX5, and the sixth sub-pixel PX6 may be electrically connected to the same second electrode 220_19. In addition, the second electrode 220_19 may be completely provided in the display area DPA, and the display device 10_19 may include only one second electrode 220_19. The description of other elements (e.g., the first electrode 210_19, the second voltage line VL2_19, etc.) is the same as the above description, and thus a detailed description thereof will be omitted.

[0308] Meanwhile, the display device 10 may include light emitting elements 300 each having a width W greater than a height H, but the light emitting elements 300 may not necessarily be arranged to face a constant direction. As described above, the light emitting element 300 may include a first type light emitting element 300A and a second type light emitting element 300B. However, in some embodiments, the light emitting element 300 may have a structure in which the width of the first semiconductor layer 310 is greater than the width of the second semiconductor layer 320, so the light emitting element 300 disposed on the first electrode 210 may be disposed to face a downward direction relative to the first semiconductor layer 310 having a relatively large width. Hereinafter, other embodiments of the light emitting element 300 will be described.

[0309] Fig.39 and Fig.40 2 are cross-sectional views each showing a light emitting element according to still another embodiment.

[0310] First, refer to Fig.39 In the light emitting element 300 ″ according to one embodiment, the first semiconductor layer 310 may include a main portion 310A and an extension portion 310B. Fig.39 The light emitting element 300" and Figure 4 The light emitting element 300 of the embodiment is different in that the first semiconductor layer 310 further includes an extension portion 310B. Hereinafter, the structure of the first semiconductor layer 310 will be described in detail, and other descriptions will be omitted.

[0311] According to one embodiment, the first semiconductor layer 310 of the light emitting element 300″ may include a main body portion 310A on which the active layer 360 is disposed and an extension portion 310B having a larger width measured in one direction. The width WB of the main body portion 310A of the first semiconductor layer 310 may be substantially the same as the width of each of the second semiconductor layer 320 and the active layer 360, and the width WA of the extension portion 310B of the first semiconductor layer 310 may be greater than the width WB of the main body portion 310A. In addition, the width WA and the width WB of the first semiconductor layer 310 are both greater than the height HA of the light emitting element 300″.

[0312] The insulating film 380 may be provided to surround at least the outer surface of the active layer 360, and may be provided to surround only the main body portion 310A of the first semiconductor layer 310. According to one embodiment, the insulating film 380 of the light emitting element 300" may be provided to surround the outer surface of the main body portion 310A of the first semiconductor layer 310, leaving the upper surface of the extension portion 310B exposed. Figure 7 ) Separate the first sub-semiconductor 3100 '(see Figure 7 ) to manufacture Fig.39 In the first etching process ( Figure 6 The insulating material may be provided to cover the first sub-semiconductor 3100' and the semiconductor core 30 (see "first etching" in FIG. Figure 7 ) and then the upper surface of the semiconductor core 30 is exposed to form the insulating film 380. Here, the insulating material formed on the first sub-semiconductor 3100' may be removed, so the insulating film 380 may be formed to surround only the outer surface of the semiconductor core 30. That is, in the light emitting element 300", the insulating film 380 may surround only the outer surface of the main body 310A of the first semiconductor layer 310 and expose the upper surface of the extension 310B.

[0313] In the light emitting element 300″ according to one embodiment, since the first semiconductor layer 310 includes the extension portion 310B having a larger width, based on the middle portion of the light emitting element 300, one end of the light emitting element 300 on which the first semiconductor layer 310 is positioned may have a relatively larger mass than the other end of the light emitting element 300 on which the second semiconductor layer 320 is positioned.

[0314] Reference Fig.40According to one embodiment, the light emitting element 300'' may include a first semiconductor layer 310 having a width greater than that of the second semiconductor layer 320, and has a shape in which the width decreases from the first semiconductor layer 310 toward a third direction DR3, which is a direction along which the first semiconductor layer 310 and the second semiconductor layer 320 are stacked. That is, the light emitting element 300'' may have a shape in which the side surface is inclined. Fig.39 Like the light emitting element 300", in the light emitting element 300'" according to one embodiment, the width of the first semiconductor layer 310 is formed to be greater than the width of the second semiconductor layer 320, and one end of the light emitting element 300'" on which the first semiconductor layer 310 is positioned may have a relatively larger mass than the other end of the light emitting element 300'" on which the second semiconductor layer 320 is positioned.

[0315] During the manufacturing process of the display device 10, the light emitting element 300 dispersed in the ink may be precipitated due to gravity or an electric field and disposed on the first electrode 210. When both ends of the light emitting element 300 have a uniform width, the light emitting element 300 may be deposited in the ink without directionality, and as shown in FIG. Figure 3 As shown in FIG. 1 , the light emitting element 300 included in the display device 10 may include a first type light emitting element 300A or a second type light emitting element 300B.

[0316] However, when the light-emitting element 300" includes a first semiconductor layer 310 including an extension portion 310B having a larger width, or the width of the first semiconductor layer 310 is further increased, when the light-emitting element 300" is deposited in the ink, the probability that the light-emitting element 300" is deposited so that the first semiconductor layer 310 faces downward increases. In the manufacturing process of the display device 10, when the ink is sprayed onto the first electrode 210, the light-emitting element 300" can be deposited and disposed on the first electrode 210. According to one embodiment, the probability that the light-emitting element 300" is deposited so that the first semiconductor layer 310 faces downward can be increased, and in the display device 10, most of the light-emitting elements 300 can be first type light-emitting elements 300A whose first semiconductor layer 310 is electrically connected to the first electrode 210.

[0317] Fig.41 and Fig.42 All are shown including Fig.39 A cross-sectional view of a portion of a display device having a light-emitting element.

[0318] Reference Fig.41 and Fig.42 According to one embodiment, the display device 10_20 and the display device 10_21 include Fig.39The light-emitting elements 300 ″ may be first-type light-emitting elements 300A whose first semiconductor layer 310 is electrically connected to the first electrode 210 . Fig.41 The display device 10_20 shows Figure 3 The display device 10 includes Fig.39 An example of a light emitting element 300 ″, Fig.42 The display device 10_21 shows Fig.34 The display device 10_15 includes Fig.39 The description of the light emitting element 300 ", the second electrode 220_21, etc. is the same as the above description, and the redundant description will be omitted. In addition, although not shown in the drawings, the display device 10_20 and the display device 10_21 may also include Fig.40 Light emitting element 300''.

[0319] As mentioned above, due to Fig.39 Light emitting element 300" and Fig.40 Each of the light emitting elements 300'' may include a first semiconductor layer 310 including a portion having a larger width, so that the probability that the light emitting element is precipitated in a state dispersed in the ink so that the first semiconductor layer 310 faces downward can be increased. Therefore, as Fig.41 and Fig.42 As shown in, in the display device 10, the first semiconductor layer 310 of a larger number of light-emitting elements 300 can be electrically connected to the first electrode 210, and the second semiconductor layer 320 thereof can be electrically connected to the second electrode 220. That is, in the display device 10, the probability that the light-emitting element 300 disposed in each sub-pixel PXn is the first type light-emitting element 300A can be increased. Other descriptions may be the same as the above description, and therefore, a detailed description thereof will be omitted.

[0320] At the same time, Fig.39 In the light emitting element 300 ″, the upper surface of the extension portion 310B of the first semiconductor layer 310 may be exposed without forming the insulating film 380 thereon. The display device 10 according to one embodiment may include Fig.39 The light emitting element 300 ″ may further include a contact electrode in contact with the extension portion 310B of the first semiconductor layer 310 and the first electrode 210 .

[0321] Fig.43 is a plan view showing a first pixel and a second pixel of a display device according to still another embodiment. Fig.44 It is along Fig.43 A cross-sectional view taken along line VI-VI'.

[0322] Reference Fig.43 and Fig.44According to one embodiment, the display device 10_22 may include Fig.39 The light emitting element 300 ″ may further include a third contact electrode 263_22 and a fourth contact electrode 264_22 contacting the extension portion 310B of the first semiconductor layer 310. Fig.43 and Fig.44 The display device 10_22 and Fig.33 and Fig.42 The difference between the display devices 10_15 and 10_21 of each embodiment is that the display device 10_22 further includes a third contact electrode 263_22 and a fourth contact electrode 264_22. In addition, the description of the second electrode 220_22 and the second voltage line VL2_22, etc. is the same as the above description, and hereinafter, the repeated description will be omitted, and the description will be provided based on the difference from the above content.

[0323] According to one embodiment, the display device 10_22 may include Fig.39 The light emitting element 300" may be provided in the groove portion GP of the first electrode 210_22. In one embodiment, the width of the extension portion 310B of the first semiconductor layer 310 of the light emitting element 300" may be smaller than the width of the groove portion GP of the first electrode 210_22. Therefore, the light emitting elements 300" each including the first semiconductor layer 310 including the extension portion 310B may be provided in the groove portion GP and may be arranged on the first electrode 210_22 in one direction.

[0324] The third contact electrode 263_22 may be in contact with one side of the extension portion 310B of the light emitting element 300" and the first electrode 210_22, and the fourth contact electrode 264_22 may be in contact with the other side of the extension portion 310B of the light emitting element 300" and the first electrode 210_22. The third contact electrode 263_22 and the fourth contact electrode 264_22 may both extend in one direction (for example, in the second direction DR2) along the groove portion GP. The third contact electrode 263_22 and the fourth contact electrode 264_22 may be made of the same material as the above-mentioned first contact electrode 261_2 and the second contact electrode 262_2. As an example, the third contact electrode 263_22 and the fourth contact electrode 264_22 may include a conductive material such as ITO, IZO, ITZO, aluminum (Al), or the like.

[0325] The third contact electrode 263_22 and the fourth contact electrode 264_22 may be provided to cover the exposed portion of the extension 310B. For example, the third contact electrode 263_22 and the fourth contact electrode 264_22 may be provided to cover the upper surface and the side surface of the extension 310B, and may be partially in contact with the insulating film 380 of the light emitting element 300". In the light emitting element 300", the first semiconductor layer 310 may be electrically connected to the first electrode 210_22 through the third contact electrode 263_22 and the fourth contact electrode 264_22, while being in direct contact with the first electrode 210_22. The third contact electrode 263_22 and the fourth contact electrode 264_22 may reduce the contact resistance between the first semiconductor layer 310 and the first electrode 210_22, which are made of different materials.

[0326] At the same time, the third contact electrode 263_22 and the fourth contact electrode 264_22 may be in contact with the extension portion 310B of the light emitting element 300″ and the first electrode 210_22. That is, since the third contact electrode 263_22 and the fourth contact electrode 264_22 may be in contact with the same layer, portions thereof disposed adjacent to each other may be connected to each other to form a whole. For example, the fourth contact electrode 264_22 in contact with the light emitting element 300″ disposed in one groove portion GP and the third contact electrode 263_22 in contact with the light emitting element 300″ disposed in another groove portion GP may be disposed adjacent to each other and may be integrated to form one contact electrode.

[0327] Fig.45 is a cross-sectional view showing a portion of a display device according to still another embodiment.

[0328] Reference Fig.45 According to an embodiment, the display device 10_23 may include a third contact electrode 263_23 in contact with one side of the extension portion 310B of the light emitting element 300", a fourth contact electrode 264_23 in contact with the other side of the extension portion 310B of another adjacent light emitting element 300", and a fifth contact electrode 265_23 in contact with both one side and the other side of the extension portion 310B of a different light emitting element 300". The fourth contact electrode 264_22 ( Fig.44 ) and a third contact electrode 263_22 ( Fig.44) are integrated to form a fifth contact electrode 265_23. The third contact electrode 263_23, the fourth contact electrode 264_23 and the fifth contact electrode 265_23 can all contact with the extension portion 310B of the light emitting element 300" and the first electrode 210_23, and the first semiconductor layer 310 of the light emitting element 300" can be electrically connected to the first electrode 210_23 through the third contact electrode 263_23, the fourth contact electrode 264_23 and the fifth contact electrode 265_23. The description of other elements (for example, the second electrode 220_23, etc.) can be the same as above.

[0329] Meanwhile, during the manufacturing process of the display device 10, the light emitting element 300 may be ejected in a state dispersed in the ink. As described above, in the display device 10, different types of light emitting elements 300 may be provided in each sub-pixel PXn, and inks in which different light emitting elements 300 are dispersed may be ejected in different sub-pixels PXn. According to one embodiment, the display device 10 may further include a bank layer provided at a boundary of each sub-pixel PXn to divide each sub-pixel PXn and prevent the ink from overflowing during the manufacturing process.

[0330] Fig.46 is a plan view showing a first pixel and a second pixel of a display device according to still another embodiment. Fig.47 It is along Fig.46 A cross-sectional view taken along line VII-VII'.

[0331] Reference Fig.46 and Fig.47 , the display device 10_24 may include a bank layer 400_24 disposed at a boundary of each sub-pixel PXn. Fig.46 and Fig.47 The display device 10_24 and Figure 2 and Figure 3 The display device 10 of the embodiment of FIG. 1 is different in that a bank layer 400_24 is further provided. Hereinafter, repeated description will be omitted, and the bank layer 400_24 will be described in detail.

[0332] The bank layer 400_24 may be disposed on the first planarization layer 109. Fig.46 and Fig.47As shown in , the bank layer 400_24 may be disposed at a boundary between each of the sub-pixels PXn. The bank layer 400_24 may be disposed to extend in the first direction DR1 and the second direction DR2, and may be disposed to surround a portion of each of the first electrode 210 and the first insulating layer 510 including an area in which the first electrode 210 and the light emitting element 300 are disposed. That is, the bank layer 400_24 may be disposed to surround each of the sub-pixels PXn, and the bank layer 400_24 may form a grid pattern on the entire surface of the display area DPA.

[0333] According to one embodiment, the height of the bank layer 400_24 may be greater than the height of the first insulating layer 510 and the height of the light emitting element 300. The bank layer 400_24 may divide adjacent sub-pixels PXn, and at the same time, as described below, may prevent ink from overflowing to adjacent sub-pixels PXn in an inkjet printing process for setting the light emitting element 300 during the manufacturing process of the display device 10. The bank layer 400_24 may separate inks in which different light emitting elements 300 are dispersed in different sub-pixels PXn from each other to prevent the inks from mixing with each other. The bank layer 400_24 may include polyimide (PI), but the present invention is not limited thereto.

[0334] Fig.48 It is shown Fig.46 A cross-sectional view of one operation of a manufacturing process of a display device.

[0335] Reference Fig.48 , when ink Ink in which the light emitting elements 300 are dispersed is ejected onto the first electrode 210 during the manufacturing process of the display device 10_24, the ink Ink may be located in the space formed by the bank layer 400_24, and the bank layer 400_24 may prevent the ink Ink from overflowing to another adjacent sub-pixel PXn. The ink Ink may be ejected into the space formed by the bank layer 400_24, and the light emitting element 300 may be smoothly disposed on the first electrode 210. When each of the sub-pixels PXn includes a different light emitting element 300, in the display device 10_24 including the bank layer 400_24, the light emitting elements 300 disposed in different sub-pixels PXn may be prevented from being mixed with each other.

[0336] In summarizing the detailed description, it will be appreciated by those skilled in the art that many changes and modifications may be made to the preferred embodiments without departing substantially from the principles of the invention. Therefore, the preferred embodiments of the disclosed invention are used only in a general and descriptive sense and not for purposes of limitation.

Claims

1. A display device, comprising: first base; A first electrode, disposed on the first substrate; a second electrode, disposed on the first electrode; a light emitting element disposed between the first electrode and the second electrode and including one end electrically connected to the first electrode and the other end electrically connected to the second electrode; as well as a first insulating layer, disposed between the first electrode and the second electrode to surround an outer surface of the light emitting element, The light-emitting element comprises: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; and an active layer arranged between the first semiconductor layer and the second semiconductor layer, wherein a length of the light-emitting element measured in a first direction is smaller than a width of the light-emitting element measured in a second direction perpendicular to the first direction, the first direction being a direction along which the first semiconductor layer, the active layer and the second semiconductor layer are arranged, and The light-emitting element includes a first type light-emitting element and a second type light-emitting element. In the first type light-emitting element, the first semiconductor layer is electrically connected to the first electrode. In the second type light-emitting element, the first semiconductor layer is electrically connected to the second electrode.

2. The display device according to claim 1, wherein: The one end of the light emitting element is in direct contact with the first electrode, and The other end of the light emitting element is in direct contact with the second electrode.

3. The display device according to claim 2, wherein: At least a portion of the other end of the light emitting element protrudes from the upper surface of the first insulating layer, and The second electrode is disposed to cover the other end of the protrusion.

4. The display device according to claim 2, wherein: A width of the second electrode measured in the second direction is greater than a width of the first electrode measured in the second direction.

5. The display device according to claim 2, wherein: A width of the second electrode measured in the second direction is smaller than the width of the light emitting element measured in the second direction.

6. The display device according to claim 1, further comprising: A first contact electrode, disposed on the first electrode; as well as a second contact electrode, disposed between the first insulating layer and the second electrode, wherein the one end of the light emitting element is in direct contact with the first contact electrode, and The other end of the light emitting element is in direct contact with the second contact electrode. 7 . The display device according to claim 1 , further comprising a second insulating layer, the second insulating layer being arranged to cover the first insulating layer and the second electrode.

8. The display device according to claim 7, wherein: At least one of the first insulating layer and the second insulating layer further includes a scatterer.

9. The display device according to claim 1, wherein: The first electrode includes a groove portion formed by recessing a portion of an upper surface of the first electrode, and The light emitting element is disposed in the groove portion.

10. The display device according to claim 9, wherein: The first semiconductor layer of the light emitting element includes a main body and an extension, the active layer is disposed on the main body, a width of the extension measured in the second direction is greater than a width of the main body measured in the second direction, and The width of the extension portion is smaller than a width of the groove portion.

11. The display device according to claim 10, further comprising: a third contact electrode, contacting one side of the extension portion of the light emitting element and the first electrode; as well as A fourth contact electrode contacts the other side of the extension portion and the first electrode.

12. The display device according to claim 1, further comprising a third insulating layer disposed on the first electrode and comprising an opening configured to expose a portion of an upper surface of the first electrode, in, The light emitting element is disposed in the opening.

13. A display device, comprising: A first substrate including a plurality of pixels; A first electrode disposed on the first substrate and in the plurality of pixels; a second electrode, arranged so that at least a portion of the second electrode overlaps the first electrode, and a light emitting element disposed between the first electrode and the second electrode and including one end electrically connected to the first electrode and the other end electrically connected to the second electrode, The light emitting element comprises: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; and an active layer disposed between the first semiconductor layer and the second semiconductor layer, wherein the width of the light emitting element is greater than the separation distance between the first electrode and the second electrode, and The first electrode includes a groove portion formed by recessing a portion of an upper surface of the first electrode to extend in one direction, and the light emitting element is disposed in the groove portion and arranged in the one direction.

14. The display device according to claim 13, wherein: The plurality of pixels include a first pixel and a second pixel, The first electrode is disposed in the first pixel, and The light emitting element includes a first light emitting element provided between the first electrode and the second electrode.

15. The display device according to claim 14, wherein: The second electrode is disposed in the first pixel, and A width of the second electrode measured in one direction is greater than a width of the first electrode measured in the one direction.

16. The display device according to claim 15, further comprising a third electrode, wherein the third electrode is disposed on the first substrate of the second pixel. in, The second electrode is arranged so that at least a partial area of ​​the second electrode overlaps with the third electrode arranged in the second pixel, and The light emitting element further includes a second light emitting element disposed between the second electrode and the third electrode. 17 . The display device of claim 14 , further comprising a bank layer disposed on the first substrate to surround each of the first pixel and the second pixel.

18. The display device according to claim 13, wherein: The second electrode extends in the one direction and is disposed to overlap the groove portion of the first electrode.

19. A display device, comprising: first base; A first electrode, disposed on the first substrate; a second electrode, disposed on the first electrode; a light emitting element disposed between the first electrode and the second electrode and including one end electrically connected to the first electrode and the other end electrically connected to the second electrode; as well as a first insulating layer, disposed between the first electrode and the second electrode to surround an outer surface of the light emitting element, The light-emitting element comprises: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; and an active layer arranged between the first semiconductor layer and the second semiconductor layer, wherein a length of the light-emitting element measured in a first direction is smaller than a width of the light-emitting element measured in a second direction perpendicular to the first direction, the first direction being a direction along which the first semiconductor layer, the active layer and the second semiconductor layer are arranged, and The first electrode includes a first electrode base layer and a first electrode upper layer disposed on the first electrode base layer, and the first electrode base layer reflects light emitted from the light emitting element.

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