Light-emitting device, method for manufacturing light-emitting device, display module and display device

Abstract

The embodiments of the present application provide a light-emitting device, a method for manufacturing a light-emitting device, a display module, and a display device. The light-emitting device includes a substrate layer, a light-emitting structure, and a reflective layer. The substrate layer and the light-emitting structure are stacked, the reflective layer surrounds the light-emitting structure and the substrate layer, a light-emitting channel is provided on the surface of the substrate layer, and the reflective layer exposes the light-emitting channel. In this embodiment, since the reflective layer surrounds the light-emitting structure and the substrate layer, the reflective layer can not only reflect the light diffused laterally by the light-emitting structure, but also reflect the light diffused toward the back of the light-emitting structure, thereby enabling almost all the light emitted by the light-emitting structure to be emitted to the outside. In addition, since each light-emitting device is an independent light-emitting unit, by improving the light-emitting efficiency of each light-emitting device, the display contrast of the display module or display device equipped with the light-emitting device can be increased, thereby improving the display quality of the display module or display device.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light-emitting device, a method for manufacturing a light-emitting device, a display module, and a display device. Background Art

[0002] This section provides background information related to the present application only and is not necessarily related art.

[0003] LED (light-emitting diode) displays are a common display mode. Related technologies utilize traditional LEDs arrayed, miniaturized, and then massively addressed and transferred to a circuit substrate, creating ultra-fine-pitch LEDs. This further reduces the millimeter-level LED length to micrometers, achieving ultra-high pixel density and resolution. This technology is theoretically adaptable to screens of all sizes. However, when LEDs are operating, a significant portion of the light emitted by the light-emitting layer is not effectively utilized, resulting in light loss. Improving the efficiency of this light is a current issue that needs to be addressed. Summary of the Invention

[0004] The purpose of the embodiments of the present application is to provide a light-emitting device, a method for manufacturing a light-emitting device, a display module, and a display device to increase the light extraction efficiency of the light-emitting device, thereby improving the display quality of the display module. The specific technical solution is as follows:

[0005] The embodiments of the first aspect of the present application provide a light-emitting device. The light-emitting device includes a substrate layer, a light-emitting structure, and a reflective layer. The substrate layer and the light-emitting structure are stacked, the reflective layer surrounds the light-emitting structure and the substrate layer, and a light-emitting channel is provided on a surface of the substrate layer, and the reflective layer exposes the light-emitting channel.

[0006] According to the light-emitting devices in the embodiments of the present application, each light-emitting device is an independent light-emitting unit, and the substrate layer and the light-emitting structure are stacked. The reflective layer is arranged around the light-emitting structure and the substrate layer, and the reflective layer exposes a light-emitting channel. It can be understood that during the operation of the light-emitting device, the light emitted by the light-emitting structure will diverge to the surroundings. These diverging lights can be reflected by the reflective layer and eventually emitted through the light-emitting channel. In this embodiment, since the reflective layer surrounds the light-emitting structure and the substrate layer, the reflective layer can not only reflect the light diffused laterally by the light-emitting structure, but also reflect the light diffused toward the back of the light-emitting structure, thereby enabling almost all the light emitted by the light-emitting structure to be emitted to the outside. In addition, since each light-emitting device is an independent light-emitting unit, by improving the light-emitting efficiency of each light-emitting device, the display contrast of the display module or display device equipped with the light-emitting device can be increased, thereby improving the display quality of the display module or display device.

[0007] In some embodiments of the present application, the light exit channel is arranged on a side of the substrate layer away from the light emitting structure, and a central axis of the light exit channel coincides with an extension line of the central axis of the substrate layer.

[0008] In some embodiments of the present application, an auxiliary structure is provided on a side of the substrate layer away from the light-emitting structure, and a portion of the reflective layer covers the auxiliary structure.

[0009] In some embodiments of the present application, the auxiliary structure is a step structure.

[0010] In some embodiments of the present application, the light exit channel coincides with an extension line of the central axis of the substrate layer, and the step structure is symmetrically arranged along the central axis of the substrate layer.

[0011] In some embodiments of the present application, the auxiliary structure is an arc-shaped structure, the reflective layer covers a portion of the arc-shaped structure, and the light exit channel is formed on the arc-shaped structure.

[0012] In some embodiments of the present application, the light emitting structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer, and the light emitting layer is arranged between the first semiconductor layer and the second semiconductor layer.

[0013] In some embodiments of the present application, the light-emitting device further includes a first electrode, a second electrode, a conductive layer and an insulating layer, the conductive layer is arranged on a side of the reflective layer close to the light-emitting layer, a portion of the insulating layer is arranged between the conductive layer and the light-emitting structure, and another portion of the insulating layer is arranged between a portion of the reflective layer and the light-emitting structure, the first electrode is electrically connected to the first semiconductor layer through a via, and the second electrode is electrically connected to the second semiconductor layer through a via.

[0014] In some embodiments of the present application, the light-emitting device further includes an encapsulation layer, and the encapsulation layer is disposed on a side of the reflective layer away from the light-emitting structure.

[0015] In some embodiments of the present application, the reflective layer is a Bragg reflector.

[0016] An embodiment of the second aspect of the present application provides a method for manufacturing a light-emitting device, which is used to manufacture the light-emitting device as in any embodiment of the first aspect. The steps of the manufacturing method include:

[0017] providing a substrate, and forming a plurality of light-emitting structures on the substrate;

[0018] Etching the substrate between the adjacent light emitting structures to form grooves on the substrate, wherein the grooves separate the substrate into a plurality of substrate layers;

[0019] forming a first reflective layer on a side of the light emitting structure away from the substrate layer and on a surface of the groove of the substrate layer;

[0020] Providing a middle carrier substrate, and connecting the middle carrier substrate to a side of the light emitting structure away from the substrate layer;

[0021] Polishing the side of the substrate layer away from the light-emitting structure so that the groove and the first reflective layer covering the surface of the groove are exposed, and forming a second reflective layer on the side of the substrate layer away from the light-emitting structure and in contact with the first reflective layer covering the surface of the groove;

[0022] forming a light exit channel on the second reflective layer;

[0023] The first reflective layer and the second reflective layer together form a reflective layer.

[0024] A display module according to the third aspect of the present application is characterized in that the display module includes a plurality of light-emitting devices according to any embodiment of the first aspect, and the display module also includes a base substrate and a driving circuit, the plurality of light-emitting devices are arranged at intervals on one side of the base substrate, and the plurality of light-emitting devices are bound to the base substrate through the driving circuit.

[0025] An embodiment of the fourth aspect of the present application provides a display device, comprising the light-emitting device in any embodiment of the first aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other embodiments can also be obtained based on these drawings.

[0027] Figure 1 This is a schematic structural diagram of a light-emitting device according to one embodiment of the present application;

[0028] Figure 2 This is a schematic structural diagram of a light-emitting device according to another embodiment of the present application;

[0029] Figure 3 A schematic structural diagram of a light emitting device according to another embodiment of the present application is provided;

[0030] Figure 4 This is a schematic flow chart of a method for manufacturing a light-emitting device according to one embodiment of the present application.

[0031] The reference numerals are as follows:

[0032] 100- medium load substrate;

[0033] 200 - light-emitting device; 210 - substrate layer; 211 - stepped structure; 212 - arc structure; 220 - light-emitting structure; 221 - first semiconductor layer; 222 - light-emitting layer; 223 - second semiconductor layer; 224 - conductive layer; 225 - insulating layer; 230 - reflective layer; 240 - encapsulation layer;

[0034] 300 - sealing layer; 310 - first electrode; 320 - second electrode;

[0035] 400-groove;

[0036] 500-light channel. DETAILED DESCRIPTION

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following briefly introduces the drawings required for use in the embodiments or related technical descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other embodiments can also be obtained based on these drawings.

[0038] For ease of description, spatially relative terms may be used herein to describe the relationship of one element or feature relative to another element or feature as shown in the figures, such as "inside," "outside," "inside," "outside," "below," "below," "above," and the like. Such spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.

[0039] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field based on this application are within the scope of protection of this application.

[0040] LED (light-emitting diode) display is a common display mode. In related technologies, traditional LEDs are arrayed, miniaturized, and then addressed and transferred to a circuit substrate in large quantities to form ultra-small pitch LEDs. This size type of LED is also called sub-millimeter light-emitting diodes (Mini Light Emitting Diode, referred to as Mini LED), and its size is about 100-300μm. The length of millimeter-level LEDs is further miniaturized to the micron level. This size type of LED is also called micro light-emitting diodes (Micro Light Emitting Diode, referred to as Micro LED), and its size is less than 100μm, in order to achieve ultra-high pixels and ultra-high resolution. In theory, it can adapt to the technology of screens of various sizes. Sub-millimeter light-emitting diodes (Mini Light Emitting Diode, referred to as Mini LED) and micro light-emitting diodes (Micro LED) have many advantages such as self-luminescence, high efficiency, high brightness, high reliability, energy saving and fast response speed. They are applied to fields such as micro displays, medium-sized displays such as mobile TVs, and large-screen displays in theaters. In related technologies, when Mini LED or Micro LED is working, a considerable portion of the outgoing light emitted by the light-emitting layer is not well utilized, resulting in light loss of the outgoing light. How to improve the efficiency of the outgoing light is an issue that needs to be considered at present.

[0041] like Figure 1 and Figure 2 As shown, an embodiment of the first aspect of the present application provides a light-emitting device 200. The light-emitting device 200 includes a substrate layer 210, a light-emitting structure 220, and a reflective layer 230. The substrate layer 210 and the light-emitting structure 220 are stacked, and the reflective layer 230 surrounds the light-emitting structure 220 and the substrate layer 210. A light-emitting channel 500 is provided on the surface of the substrate layer 210, and the reflective layer 230 exposes the light-emitting channel 500.

[0042] According to the light-emitting devices 200 in the embodiments of the present application, each light-emitting device 200 is an independent light-emitting unit, and the substrate layer 210 and the light-emitting structure 220 are stacked. The reflective layer 230 is disposed around the light-emitting structure 220 and the substrate layer 210, and the light-emitting channel 500 is exposed on the reflective layer 230. It is understood that during the operation of the light-emitting device 200, the light emitted by the light-emitting structure 220 will diverge in all directions. This divergent light can be reflected by the reflective layer 230 and ultimately emitted through the light-emitting channel 500. In this embodiment, since the reflective layer 230 surrounds the light-emitting structure 220 and the substrate layer 210, the reflective layer 230 can not only reflect the light diffused laterally by the light-emitting structure 220, but also reflect the light diffused toward the back of the light-emitting structure 220, so that almost all the light emitted by the light-emitting structure 220 can be emitted to the outside. In addition, since each light-emitting device 200 is an independent light-emitting unit, by improving the light emission efficiency of each light-emitting device 200, the display contrast of the display module or display device equipped with the light-emitting device 200 can be increased, thereby improving the display quality of the display module or display device.

[0043] In some specific embodiments of the present application, the material of the substrate layer 210 can be a high-transmittance sapphire substrate (Al2O3), silicon (Si), silicon carbide (SiC), gallium nitride (GaN) or zinc oxide (ZnO), etc., and the present application does not make any special restrictions.

[0044] In some embodiments of the present application, the light exit channel 500 is disposed on a side of the substrate layer 210 away from the light emitting structure 220, and the central axis of the light exit channel 500 coincides with an extension of the central axis of the substrate layer 210. In this embodiment, each light emitting device 200 is an independent light emitting unit, and these light emitting devices 200 all include a substrate layer 210 and a light emitting structure 220. The central axis of the substrate layer 210 is perpendicular to the axis of the substrate layer 210. By aligning the central axis of the light exit channel 500 with the central axis of the substrate layer 210, the propagation path of light emitted by the light emitting structure 220 can be optimized, allowing the light to be more concentrated and efficiently transmitted to the light exit channel 500 and emitted to the outside.

[0045] In some embodiments of the present application, an auxiliary structure is provided on a side of the substrate layer 210 away from the light-emitting structure 220, and the auxiliary structure is covered by the reflective layer 230. In this embodiment, the auxiliary structure can be a more secure structure that enables the reflective layer 230 to adhere to the substrate layer 210, such as a zigzag, stepped, or curved shape, which is not particularly limited here.

[0046] Please refer to Figure 2In some embodiments of the present application, the auxiliary structure is a step structure 211. In this embodiment, the step structure 211 can be formed on the side of the substrate layer 210 away from the light-emitting structure 220 by step-by-step ICP dry etching. The step structure 211 is step-shaped and can also be called a boss structure. The step structure 211 can include multiple intersecting surfaces, which can also be perpendicular to each other, without special limitation. By providing the step structure 211, the reflective layer 230 can be more firmly fixed to the substrate layer 210. In some specific embodiments, the middle portion of the step structure 211 protrudes from the edge portion, and the light output channel 500 is arranged in the middle portion of the step structure 211, that is, the reflective layer 230 is not provided in the middle portion of the substrate layer 210. It can be understood that when manufacturing the light-emitting device 200, during the transfer process, the substrate layer 210 will be pressed down by a pin on the side away from the light-emitting structure 220 to make the light-emitting device 200 contact the substrate substrate. In this embodiment, the pin can contact the area on the substrate layer 210 where the light output channel 500 is located to make the light-emitting device 200 contact the substrate substrate. Since the reflective layer 230 is not provided in this portion, the pin can avoid direct contact with the reflective layer 230 and damage to the reflective layer 230.

[0047] In some embodiments of the present application, the light exit channel 500 coincides with an extension line of the central axis of the substrate layer 210, and the step structure 211 is symmetrically arranged along the central axis of the substrate layer 210. In this embodiment, because the step structure 211 is symmetrically designed along the central axis of the substrate layer 210, the step structure 211 and the reflective layer 230 can cooperate with each other to cause the light emitted by the light-emitting structure 220 to form a 90° reflection, thereby shortening the reflected optical path and concentrating more light at the center of the substrate layer 210.

[0048] like Figure 3 As shown, in some embodiments of the present application, the auxiliary structure is an arc-shaped structure 212, the reflective layer 230 covers a portion of the arc-shaped structure 212, and a light outlet channel 500 is formed on the arc-shaped structure 212. In this embodiment, the arc-shaped structure 212 can be a hemispherical structure, and the light outlet channel 500 can also be formed in the center of the arc-shaped structure 212, that is, the middle part of the substrate layer 210 protrudes from the edge. When manufacturing the light-emitting device 200, during the transfer process, the substrate layer 210 is pressed down by a pin on the side away from the light-emitting structure 220 to make the light-emitting device 200 contact the substrate. In this embodiment, the arc-shaped structure 212 is formed on the substrate layer 210. At this time, the pin can be against the top (middle part) of the arc-shaped structure 212 to prevent the pin from directly contacting the reflective layer 230 and causing damage to the reflective layer 230.

[0049] In some embodiments of the present application, the light-emitting structure 220 includes a first semiconductor layer 221, a second semiconductor layer 223, and a light-emitting layer 222, wherein the light-emitting layer 222 is disposed between the first semiconductor layer 221 and the second semiconductor layer 223. In this embodiment, the first semiconductor layer 221 may be an N-type semiconductor layer, the material of which may be N-GaN, the second semiconductor layer 223 may be a P-type semiconductor layer, the material of which may be P-GaN, and the light-emitting layer 222 may be an MQW (quantum well), the material of which may be any one or a combination of AlN, GaN, AlGaN, InGaN, and AlInGaN, and this application does not impose any particular limitation on this.

[0050] In some embodiments of the present application, the light-emitting device further includes a first electrode 310, a second electrode 320, a conductive layer 224, and an insulating layer 225. The conductive layer 224 is disposed on a side of the reflective layer 230 near the light-emitting layer 222. A portion of the insulating layer 225 is disposed between the conductive layer 224 and the light-emitting structure 220, and another portion of the insulating layer 225 is disposed between a portion of the reflective layer 230 and the light-emitting structure 220. The first electrode 310 is electrically connected to the first semiconductor layer 221 via a via, and the second electrode 320 is electrically connected to the second semiconductor layer 223 via a via. In this embodiment, the insulating layer 225 is also referred to as PVX (Passivation), which can inhibit or prevent chemical reactions, such as oxidation reactions, on the surface of the relevant structure. In this embodiment, the insulating layer 225 is used to isolate the reflective layer 230 from the light-emitting structure 220, preventing the light-emitting structure 220 from chemically reacting with the reflective layer 230, thereby affecting the performance of the light-emitting structure 220. The conductive layer 224 can be made of indium tin oxide (ITO), which has good light transmittance and good conductivity. The conductive layer 224 is connected to the second electrode 320 and the second semiconductor layer 223, respectively, to enable electrical conduction between the second electrode 320 and the second semiconductor layer 223. When the first semiconductor layer 221 is an N-type semiconductor layer and the second semiconductor layer 223 is a P-type semiconductor layer, the first electrode 310 can be an N-pad and the second electrode 320 can be a P-pad. The first electrode 310 and the second electrode 320 are respectively connected to the first semiconductor layer 221 and the second semiconductor layer 223 to form an electrical circuit to drive the light-emitting structure 220 to emit light.

[0051] In some embodiments of the present application, the light-emitting device 200 further includes an encapsulation layer 240, which is disposed on a side of the reflective layer 230 away from the light-emitting structure 220. In this embodiment, the reflective layer 230 covers the surface of the light-emitting structure 220, and the surface structure of the reflective layer 230 is uneven. The encapsulation layer 240 can make the surface of the reflective layer 230 as flat as possible to facilitate subsequent processing.

[0052] In some embodiments of the present application, the reflective layer 230 is a Bragg reflector. In this embodiment, the Bragg reflector is also called a distributed Bragg reflector (DBR), which is a periodic structure composed of two materials with different refractive indices arranged in an alternating manner (for example, arranged alternately in an ABAB manner), and the optical thickness of each layer of material is 1 / 4 wavelength of the central reflection wavelength. In some specific embodiments, the reflective layer 230 can be formed by MOCVD or evaporation to form a superimposed SiO2 and TiO2 film layer to form a 1 / 4 wavelength reflector of the required light. The Bragg reflector in this embodiment has a high reflectivity (the reflectivity can achieve more than 99%), so it can increase the light extraction efficiency of the light-emitting structure 220 to increase the brightness of the light-emitting device 200.

[0053] like Figure 4 As shown, an embodiment of the second aspect of the present application provides a method for manufacturing a light-emitting device, which is used to manufacture the light-emitting device of any embodiment of the first aspect. The steps of the manufacturing method include:

[0054] S10, providing a substrate, and forming a plurality of light emitting structures 220 on the substrate;

[0055] S20 , etching the substrate between the adjacent light emitting structures 220 to form grooves 400 on the substrate, wherein the grooves 400 separate the substrate into a plurality of substrate layers 210 ;

[0056] S30, forming a first reflective layer on a side of the light emitting structure 220 away from the substrate layer 210 and on a surface of the groove 400 of the substrate layer 210;

[0057] S40 , providing a middle carrier substrate 100 , and connecting the middle carrier substrate 100 to a side of the light emitting structure 220 away from the substrate layer 210 ;

[0058] S50, polishing the side of the substrate layer 210 away from the light emitting structure 220, so that the groove 400 and the first reflective layer covering the surface of the groove 400 are exposed, and forming a second reflective layer on the side of the substrate layer 210 away from the light emitting structure 220, and connecting with the first reflective layer covering the surface of the groove 400;

[0059] S60, forming a light exit channel 500 on the second reflective layer;

[0060] The first reflective layer and the second reflective layer together form the reflective layer 230 .

[0061] In this embodiment, the light-emitting structure 220 may include a first semiconductor layer 221, a second semiconductor layer 223, a light-emitting layer 222, an insulating layer 225 and a conductive layer 224. After the deposition of the light-emitting structure 220 is completed, the substrate layer 210 between each light-emitting structure 220 may be etched by laser etching or ICP or other methods. At this time, a substrate of about 1 / 4 thickness needs to be retained as a support to prevent the substrate from breaking. At this time, a first reflective layer can be formed on the side of the light-emitting structure 220 away from the substrate layer 210 and on the surface of the groove 400 of the substrate layer 210, so that the first reflective layer surrounds the light-emitting structure 220. Before step S40, an encapsulation layer 240 can be formed on the surface of the light-emitting structure 220, and a first electrode 310 and a second electrode 320 can be produced, wherein the first electrode 310 can be connected to the first semiconductor layer 221, and the second electrode 320 can be connected to the second semiconductor layer 223. At this time, the carrier substrate 100 can be adhered to the side of the light-emitting structure 220 away from the substrate layer 210 by pasting, please refer to Figures 1 to 3 A sealing layer 300 can be disposed between the light-emitting structure 220 and the intermediate substrate 100 to prevent accidental contact between the first electrode 310 and the second electrode 320, which could cause a short circuit. The intermediate substrate 100 can be made of silicon wafers or glass, which can provide sufficient support for subsequent manufacturing processes. The adhesive must be a material that can be decomposed by heat, laser, or UV irradiation (such as polycarbonate, DBL adhesive, etc.) to facilitate subsequent peeling of the intermediate substrate 100.

[0062] In one specific embodiment, please refer to Figure 1 After forming the second reflective layer on the side of the substrate layer 210 away from the light emitting structure 220, a light outlet channel 500 can be formed on the reflective layer 230 by etching. Figure 2 , the side of the substrate layer 210 away from the light emitting structure 220 can be etched by step-by-step ICP dry etching to form a step structure 211, and when covering the second reflective layer, a light outlet channel 500 can be reserved. In another specific embodiment, please refer to Figure 3 , the side of the substrate layer 210 away from the light emitting structure 220 can be etched by step-by-step ICP dry etching to form an arc-shaped structure 212 (for example, a hemispherical structure), and then a second reflective layer is made on the surface of the arc-shaped structure 212. When covering the second reflective layer, a light outlet channel 500 can be reserved. It should be noted that those skilled in the art can also etch other shapes or structures on the side of the substrate layer 210 away from the light emitting structure 220 based on the inspiration of the above embodiments, and no special limitation is made here. By forming a step structure 211 or an arc-shaped structure 212 on the substrate layer 210, damage to the reflective layer 230 caused by the top needle during the transfer process can be avoided.

[0063] Each light-emitting device 200 manufactured according to the manufacturing method of the embodiment of the present application is an independent light-emitting unit, and the substrate layer 210 and the light-emitting structure 220 are stacked. The reflective layer 230 is arranged around the light-emitting structure 220 and the substrate layer 210, and the light-emitting channel 500 is exposed on the reflective layer 230. It can be understood that during the operation of the light-emitting device 200, the light emitted by the light-emitting structure 220 will diverge in all directions. This diverging light can be reflected by the reflective layer 230 and ultimately emitted through the light-emitting channel 500. In this embodiment, since the reflective layer 230 surrounds the light-emitting structure 220 and the substrate layer 210, the reflective layer 230 can not only reflect the light diffused laterally by the light-emitting structure 220, but also reflect the light diffused toward the back of the light-emitting structure 220, so that almost all the light emitted by the light-emitting structure 220 can be emitted to the outside. In addition, since each light-emitting device 200 is an independent light-emitting unit, by improving the light emission efficiency of each light-emitting device 200, the display contrast of the display module or display device equipped with the light-emitting device 200 can be increased, thereby improving the display quality of the display module or display device.

[0064] An embodiment of the third aspect of the present application proposes a display module, which includes a plurality of light-emitting devices 200 according to any embodiment of the first aspect. The display module also includes a base substrate and a driving circuit. The plurality of light-emitting devices 200 are arranged at intervals on one side of the base substrate, and the plurality of light-emitting devices 200 are bound to the base substrate through the driving circuit.

[0065] In this embodiment, the substrate substrate may include an organic resin material such as epoxy resin, triazine, silicone resin or polyimide. In some example embodiments, the substrate substrate may be an FR4 type printed circuit board (PCB), or may be a flexible PCB that is easily deformed. In some example embodiments, the substrate substrate may include a ceramic material such as silicon nitride, AlN or Al2O3, or a metal or metal compound, and the substrate substrate may be a metal core printed circuit board (MCPCB) or a metal copper clad laminate (MCCL). The substrate substrate is bound to the light emitting device 200 through a driving circuit, and this embodiment does not specifically limit the binding method.

[0066] According to the display module in the embodiment of the present application, the light-emitting devices 200 on the substrate are arranged at intervals, that is, grooves 400 are formed between adjacent light-emitting devices 200. During operation of the display module, the light emitted by the light-emitting structure 220 will diverge in all directions. This diverging light can be reflected by the reflective layer 230 and ultimately emitted through the light-emitting channel 500. Since the reflective layer 230 surrounds the light-emitting structure 220 and the substrate layer 210, the reflective layer 230 can not only reflect the light diffused laterally by the light-emitting structure 220, but also reflect the light diffused toward the back of the light-emitting structure 220. In this way, almost all of the light emitted by the light-emitting structure 220 can be emitted to the outside. In addition, since each light-emitting device 200 is an independent light-emitting unit, by improving the light-emitting efficiency of each light-emitting device 200, the display contrast of the display module can be increased, thereby improving the display quality of the display module.

[0067] An embodiment of the fourth aspect of the present application provides a display device, comprising the display module of any embodiment of the first aspect.

[0068] According to the display device in the embodiment of the present application, since it includes the display module in any embodiment of the first aspect, it also has the beneficial effects of any embodiment of the first aspect, which will not be repeated here.

[0069] It should be noted that the display device in this embodiment can be any product or component with a display function, such as electronic paper, a mobile phone, a tablet computer, a television, a laptop computer, a digital photo frame, or a navigator.

[0070] It should be noted that in the accompanying drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. It will also be understood that when an element or layer is referred to as being "on" another element or layer, it may be directly on the other element, or there may be an intermediate layer. In addition, it will be understood that when an element or layer is referred to as being "under" another element or layer, it may be directly under the other element, or there may be more than one intermediate layer or element. In addition, it will also be understood that when a layer or element is referred to as being "between" two layers or elements, it may be the only layer between the two layers or elements, or there may also be more than one intermediate layer or element. Similar reference numerals throughout the text indicate similar elements.

[0071] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0072] The various embodiments of the present application are described in a related manner. The same or similar parts between the various embodiments can be referred to each other. Each embodiment focuses on the differences from other embodiments.

[0073] The above description is only a preferred embodiment of the present application and is not intended to limit the scope of protection of the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application are included in the scope of protection of the present application.

Claims

1. A light emitting device, characterized in that: The light-emitting device includes a substrate layer, a light-emitting structure, and a reflective layer. The substrate layer and the light-emitting structure are stacked, the reflective layer surrounds the light-emitting structure and the substrate layer, and the reflective layer is provided on a side of the light-emitting structure facing away from the substrate layer. A light-emitting channel is provided on the surface of the substrate layer, and the reflective layer exposes the light-emitting channel. An auxiliary structure is provided on a side of the substrate layer away from the light emitting structure, the auxiliary structure is a part of the substrate layer, and a part of the reflective layer covers the auxiliary structure; The auxiliary structure is a step structure, and the light exit channel exposed by the reflective layer is located on the surface of the step structure farthest from the light emitting structure. Alternatively, the auxiliary structure is an arc-shaped structure, the reflective layer covers a portion of the arc-shaped structure, and the light output channel is formed on the arc-shaped structure, and the light output channel exposed by the reflective layer is located on the surface of the arc-shaped structure farthest from the light-emitting structure.

2. The light emitting device according to claim 1, wherein The light exit channel is arranged on a side of the substrate layer away from the light emitting structure, and a central axis of the light exit channel coincides with an extension line of the central axis of the substrate layer.

3. The light emitting device according to claim 1, wherein The light exit channel coincides with an extension line of the central axis of the substrate layer, and the step structure is symmetrically arranged along the central axis of the substrate layer.

4. The light emitting device according to claim 1, wherein The light emitting structure includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer, and the light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer.

5. The light emitting device according to claim 4, characterized in that The light-emitting device also includes a first electrode, a second electrode, a conductive layer and an insulating layer, the conductive layer is arranged on a side of the reflective layer close to the light-emitting layer, a portion of the insulating layer is arranged between the conductive layer and the light-emitting structure, and another portion of the insulating layer is arranged between a portion of the reflective layer and the light-emitting structure, the first electrode is electrically connected to the first semiconductor layer through a via hole, and the second electrode is electrically connected to the second semiconductor layer through a via hole.

6. The light emitting device according to claim 5, characterized in that The light emitting device further includes an encapsulation layer, which is disposed on a side of the reflective layer away from the light emitting structure.

7. The light emitting device according to any one of claims 1 to 6, characterized in that The reflective layer is a Bragg reflector.

8. A method for manufacturing a light emitting device, characterized in that: For manufacturing a light emitting device according to any one of claims 1 to 7, the manufacturing method comprises the following steps: providing a substrate, and forming a plurality of light-emitting structures on the substrate; Etching the substrate between the adjacent light emitting structures to form grooves on the substrate, wherein the grooves separate the substrate into a plurality of substrate layers; forming a first reflective layer on a side of the light emitting structure away from the substrate layer and on a surface of the groove of the substrate layer; Providing a middle carrier substrate, and connecting the middle carrier substrate to a side of the light emitting structure away from the substrate layer; Polishing the side of the substrate layer away from the light-emitting structure so that the groove and the first reflective layer covering the surface of the groove are exposed, and forming a second reflective layer on the side of the substrate layer away from the light-emitting structure and in contact with the first reflective layer covering the surface of the groove; forming a light exit channel on the second reflective layer; The first reflective layer and the second reflective layer together form the reflective layer; The reflective layer is provided on the side of the light-emitting structure facing away from the substrate layer; an auxiliary structure is provided on the side of the substrate layer away from the light-emitting structure, the auxiliary structure is a part of the substrate layer, and a part of the reflective layer covers the auxiliary structure; the auxiliary structure is a step structure, and the light output channel exposed by the reflective layer is located on the surface of the step structure farthest from the light-emitting structure, or, the auxiliary structure is an arc structure, the reflective layer covers a part of the arc structure, and the light output channel is formed on the arc structure, and the light output channel exposed by the reflective layer is located on the surface of the arc structure farthest from the light-emitting structure.

9. A display module, characterized in that: The display module includes a plurality of light-emitting devices according to any one of claims 1 to 7, and the display module also includes a base substrate and a driving circuit. The plurality of light-emitting devices are arranged at intervals on one side of the base substrate, and the plurality of light-emitting devices are bound to the base substrate through the driving circuit.

10. A display device, characterized in that: The light emitting device comprises the light emitting device according to any one of claims 1 to 7.

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