Exposure apparatus and exposure method

Abstract

Provided are an exposure apparatus and an exposure method capable of detecting an exposure position with high precision even in a narrow area. The exposure apparatus (10) includes a light-shielding portion (40) provided with a first slit (SU1) and a second slit (SU2) arranged along the main scanning direction (X). The exposure apparatus (10) scans light of an X-shaped discrete position detection pattern (PT) having square-shaped sub-patterns (PT1 to PT5) with respect to the first and second slits (SU1, SU2) of the light-shielding portion (40) along the main scanning direction (X).

Description

Technical Field

[0001] The present invention relates to an exposure apparatus, and particularly to position detection of a pattern projected onto a substrate or the like. Background Art

[0002] In a maskless exposure apparatus, while moving a stage on which a substrate is mounted in a scanning direction, pattern light is projected onto the substrate through an array of light modulation elements such as a DMD (Digital Micro-mirror Device). Here, the position of a projection area (exposure area) on the substrate placed on the stage is detected, and light modulation elements such as micromirrors arranged two-dimensionally are controlled so as to project pattern light corresponding to the position.

[0003] When forming a fine pattern, it is necessary to accurately detect the position of the substrate and project the pattern light without causing a position shift. However, due to temperature changes of the DMD or the like, sometimes the projection position of the pattern light shifts, resulting in an error in the pattern formation position.

[0004] To prevent this, a slit is formed on the stage on which the substrate is mounted or the like, and light transmitted through the slit is received to detect a deviation in the exposure position. By projecting a pattern image for position detection at a prescribed position while moving the stage, the light amount is detected in time series, and exposure data is corrected or the installation position is adjusted based on the difference between the exposure position calculated from the light amount and a reference exposure position.

[0005] In the case of detecting two-dimensional coordinates of the exposure position, a method is known in which two scanning regions are provided to form different slits, and pattern images coinciding with the slits are projected respectively (see Patent Document 1). Here, a slit parallel to the sub-scanning direction is formed in one scanning region, and a pattern parallel to the slit is projected. In the other scanning region, a slit inclined with respect to the sub-scanning direction is formed, and a pattern parallel to the inclined slit is projected.

[0006] Further, in order to detect the exposure position of each part in the exposure target area, a method is known in which linear slits are arranged along the sub-scanning direction and dot-like pattern light is scanned (see Patent Document 2). Here, the exposure position is detected based on the light amount detected from the pattern light passing through the pair of linear slits.

[0007] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2015-142036

[0008] Patent Document 2: Japanese Unexamined Patent Application Publication No. 2018-91896

[0009] With the miniaturization of patterns, it is required to set a narrower area in the exposure target area and detect the exposure position in this area with high precision. However, in the detection method of setting different slits in two scanning areas as in Patent Document 1, it is difficult to set a narrow area. On the other hand, in the method of projecting dot-like patterns as in Patent Document 2, there is a possibility that the measurement accuracy may decrease due to insufficient light quantity. Summary of the Invention

[0010] Therefore, in an exposure apparatus, it is required to detect the exposure position with high precision even in a narrow area.

[0011] The exposure apparatus of the present invention has: a light shielding portion in which a first slit and a second slit having positive and negative opposite inclination angles with respect to the sub-scanning direction are arranged in the main scanning direction; an exposure portion capable of projecting light of a position detection pattern onto the light shielding portion; a light receiving portion that receives the light passing through the first slit and the second slit; and a detection portion that detects the exposure position based on a signal output from the light receiving portion when the light of the position detection pattern is scanned in the main scanning direction. For example, first and second slit portions symmetric with respect to the sub-scanning direction can be formed. In addition, a plurality of first slits and a plurality of second slits may be configured to converge and be arranged in sequence along the main scanning direction.

[0012] Moreover, the exposure portion can project the light of the position detection pattern onto the light shielding portion, and the position detection pattern is composed of a first pattern element that is continuous or discrete and parallel to the first slit and a second pattern element that is continuous or discrete and parallel to the second slit, and a part of the first pattern element and the second pattern element is common.

[0013] The light of the position detection pattern can form various-shaped position detection patterns according to the shape, size, configuration, number, etc. of the first and second slits, and can be composed of discrete or continuous first and second pattern elements. For example, the exposure portion can project the light of a cross-shaped pattern formed by the intersection of the first pattern element and the second pattern element onto the light shielding portion as the light of the position detection pattern.

[0014] As the light of a discrete cross-shaped pattern, the exposure portion can project the light of a cross-shaped pattern onto the light shielding portion, and the cross-shaped pattern is composed of discrete first pattern elements and discrete second pattern elements, and a position sub-pattern is common at the center or near the center of the first pattern element and the second pattern element. Here, the first pattern element is composed of a plurality of sub-patterns arranged at a prescribed interval, and the second pattern element is composed of a plurality of sub-patterns arranged at a prescribed interval. For example, the discrete sub-patterns of the first and second pattern elements can project circular or rectangular patterns.

[0015] In particular, the exposure unit can project light of a cross-shaped pattern onto the light-shielding unit. The cross-shaped pattern is composed of discrete first pattern elements and discrete second pattern elements, and a position sub-pattern is shared at or near the centers of the first pattern elements and the second pattern elements. Here, the first pattern elements are composed of a plurality of sub-patterns arranged at a prescribed interval, and the second pattern elements are composed of a plurality of sub-patterns arranged at a prescribed interval.

[0016] When projecting light of such a cross-shaped pattern, it is possible to form pattern light in which the distance interval between adjacent sub-patterns of the first pattern elements corresponds to the distance interval and the slit width of the first slit, and the distance interval between adjacent sub-patterns of the second pattern elements corresponds to the distance interval and the slit width of the second slit.

[0017] On the other hand, when projecting light of a position detection pattern of continuous first pattern and second pattern elements, the exposure unit can also project light of a cross-shaped pattern composed of a linear continuous first pattern element and a linear continuous second pattern element onto the light-shielding unit. For example, as long as the light of the cross-shaped pattern is projected onto the light-shielding unit in such a way that the line widths of the first pattern element and the second pattern element are respectively smaller than the slit widths of the first slit and the second slit, the exposure unit projects light of a cross-shaped pattern composed of a plurality of arranged linear continuous first pattern elements and a plurality of arranged linear continuous second pattern elements.

[0018] In particular, it is possible to project light of a cross-shaped pattern in which the arrangement distance interval of the continuous first pattern elements corresponds to the distance interval and the slit width of the first slit, and the arrangement distance interval of the continuous second pattern elements corresponds to the distance interval and the slit width of the second slit.

[0019] Another exposure method of the present invention projects light of a position detection pattern onto a light-shielding unit having first slits and second slits arranged in the main scanning direction and having positive and negative inclination angles with respect to the sub-scanning direction. The exposure position is detected based on signals output from a light-receiving unit that receives light passing through the first slits and the second slits when the light of the position detection pattern is scanned in the main scanning direction. Here, the light of the position detection pattern is projected onto the light-shielding unit. The position detection pattern is composed of continuous or discrete first pattern elements parallel to the first slits and continuous or discrete second pattern elements parallel to the second slits, and a part of the first pattern elements and the second pattern elements is shared.

[0020] Another exposure apparatus of the present invention has a light-shielding portion, in which a first slit and a second slit having inclination angles with opposite signs with respect to the sub-scanning direction are formed. When scanning the light of the position detection pattern with respect to the light-shielding portion, the position detection pattern formed by sub-patterns respectively parallel to the first slit and the second slit can pass through the first slit and the second slit in sequence. For example, the first and second slits symmetrically can be formed along a specific direction such as the sub-scanning direction.

[0021] According to the present invention, in the exposure apparatus, even in a narrow area, the exposure position can be detected with high precision. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a block diagram of the exposure apparatus of the first embodiment.

[0023] Figure 2 is a top view showing a part of the light-shielding portion.

[0024] Figure 3 is a view showing the position detection pattern.

[0025] Figure 4 is a view when the position detection pattern PT passes through the second slit SU2.

[0026] Figure 5 is a graph showing the time-series distribution of the light amount detected by the photosensor PD when the position detection pattern PT passes through the second slit SU2.

[0027] Figure 6 is a view showing the exposure position shift of the slit.

[0028] Figure 7 is a view showing the position detection pattern of the second embodiment.

[0029] Figure 8 is a view showing the state when the position detection pattern of the second embodiment passes through the second slit SU2.

[0030] Figure 9 is a view showing the position detection pattern of the third embodiment.

[0031] Figure 10 is a view when the position detection pattern PT” of the third embodiment passes through the second slit SU2.

[0032] Figure 11 is a graph showing the time-series distribution of the light amount detected by the photosensor PD when the position detection pattern PT” of the third embodiment passes through the second slit SU2.

[0033] Figure 12This is a diagram showing a modified example of the position detection pattern.

[0034] Reference Numeral Explanation

[0035] 10: Exposure apparatus; 22: DMD (array of light modulation elements); 27: Position calculation unit; 28: Position detection unit (light measurement unit); 30: Controller (exposure control unit); 40: Light shielding unit; PD: Photo sensor. Detailed Embodiment

[0036] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

[0037] Figure 1 This is a block diagram of the exposure apparatus according to the first embodiment.

[0038] The exposure apparatus (drawing apparatus) 10 is a maskless exposure apparatus that forms a pattern by irradiating a substrate W coated or pasted with a photosensitive material such as a photoresist, and the stage 12 on which the substrate W is mounted is provided so as to be movable along the scanning direction. The stage driving mechanism 15 can move the stage 12 along the main scanning direction X and the sub-scanning direction Y.

[0039] The exposure apparatus 10 has a plurality of exposure heads that project pattern light (only one exposure head 18 is illustrated here), and the exposure head 18 has a DMD 22, an illumination optical system, and an imaging optical system (both not illustrated). The light source 20 is constituted by, for example, a discharge lamp (not illustrated) and is driven by the light source driving unit 21.

[0040] When CAD / CAM data composed of vector data or the like is input to the exposure apparatus 10, the vector data is sent to the raster conversion circuit 26, and the vector data is converted into raster data. The generated raster data is temporarily stored in a buffer memory (not illustrated) and then sent to the DMD driving circuit 24.

[0041] The DMD 22 is an array of light modulation elements in which minute micromirrors are two-dimensionally arranged, and each micromirror can selectively switch the reflection direction of light by changing its posture. By controlling the postures of the respective mirrors by the DMD driving circuit 24, light corresponding to the pattern is projected onto the surface of the substrate W through the imaging optical system.

[0042] The stage driving mechanism 15 has a linear encoder (not illustrated), moves the stage 12 according to a control signal sent from the controller 30, and measures the position of the stage 12 and feeds it back to the controller 30.

[0043] The position detection unit 28 is provided near the end of the worktable 12 and includes a photosensor PD and a pulse signal generation unit (not shown). Here, the photosensor PD is composed of a single sensor. Above the position detection unit 28, a light shielding unit 40 that allows light to pass through partially is provided. The position calculation unit 27 calculates the exposure position, that is, the position of the substrate W (worktable 12) relative to the exposure head 18, based on the signal sent from the position detection unit 28.

[0044] During the exposure operation, the worktable 12 moves at a constant speed along the main scanning direction X. The projection area (hereinafter referred to as the exposure area) projected by the entire DMD 22 moves relatively on the substrate W as the substrate W moves. The exposure operation is performed at a specified exposure pitch, and the micromirrors are controlled to project pattern light according to the exposure pitch.

[0045] By adjusting the control timing of each micromirror of the DMD 22 according to the relative position of the exposure area, the light of the pattern to be drawn at the position of the exposure area is projected in sequence. Then, the entire substrate W is drawn by a plurality of exposure heads including the exposure head 18, thereby forming a pattern on the entire substrate W. As the exposure method, not only the continuous movement method of moving at a constant speed but also the step-and-repeat method of moving intermittently can be used. In addition, multiple exposure (overlapping exposure) in which the projection areas at the time of exposure projection are partially overlapped can also be used.

[0046] In the pre-stage of starting the exposure operation, etc., in order to form a pattern at an accurate position, a correction process related to the exposure start position is performed. Specifically, while moving the worktable 12 at a constant speed, the light of the pattern for position detection is scanned on the light shielding unit 40. The controller 30 corrects the exposure start position based on the exposure position information sent from the position calculation unit 27.

[0047] Hereinafter, Figures 2 to 6 the detection and correction of the exposure position will be described.

[0048] Figure 2 is a top view showing a part of the light shielding unit. Figure 3 is a view showing the position detection pattern.

[0049] In the slit area ST of the light shielding unit 40, a slit SU is formed along the main scanning direction X. The light shielding unit 40 is parallel to the light receiving surface of the photosensor PD and the drawing surface of the substrate W, and the worktable 12 is moved so that the light of the position detection pattern passes through the slit area ST.

[0050] The slit SU is composed of a first slit SU1 and a second slit SU2, and they are arranged at a prescribed interval. Here, the first slit SU1 and the second slit SU2 are each composed of a plurality of (here, 15 in each case) slits. The first slit SU1 and the second slit SU2 are each inclined by θ1 and θ2 with respect to the sub-scanning direction Y, respectively.

[0051] The first slit SU1 and the second slit SU2 are formed along the same scanning line in the following manner: when the light of the position detection pattern is scanned along the main scanning direction X, it passes through the first slit SU1 and the second slit SU2 in sequence. In addition, the first slit SU1 and the second slit SU2 have inclination angles θ1 and θ2 with opposite signs with respect to the sub-scanning direction Y in a manner symmetric (line symmetric) with respect to the sub-scanning direction Y. Here, the inclination angles with respect to the sub-scanning direction Y are the same (|θ1| = |θ2|), and are determined to be ±45°. In addition, the interval and the slit width L are also determined to be equal.

[0052] Figure 3 The shown position detection pattern PT is composed of 5 rectangular patterns (hereinafter referred to as sub-patterns), and they are separated from each other at a prescribed interval. The position detection pattern PT is composed of a sub-pattern (hereinafter also referred to as the central sub-pattern) PT1 located at the center, 2 sub-patterns PT2 and PT3 located on both sides of the central sub-pattern PT1 along the direction parallel to the first slit SU1, and 2 sub-patterns PT4 and PT5 located on both sides of the central sub-pattern PT1 along the direction parallel to the second slit SU2.

[0053] In the present embodiment, the position detection pattern PT is configured as a discrete X-shaped pattern in which 5 sub-patterns PT1 to PT5 are arranged symmetrically with respect to the main scanning direction X and the sub-scanning direction Y with the central sub-pattern PT1 as the center. In other words, when the sub-patterns PT1, PT2, and PT3 arranged along the direction of the first slit SU1 are set as the first pattern element PE1, and the sub-patterns PT4, PT1, and PT5 arranged along the direction of the second slit SU2 are set as the second pattern element PE2, the position detection pattern PT is composed of a cross-shaped pattern in which the first pattern element PE1 and the second pattern element PE2 are perpendicular to each other at the center and share the central sub-pattern PT1.

[0054] The rectangular dimensions of the sub-patterns PT1 to PT5 are all equal. Here, the sub-patterns PT1 to PT5 are composed of square patterns with a side length of D. In addition, in the first pattern element PE1 along the first slit SU1, the distance intervals between the adjacent sub-patterns PT1, PT2, and PT3 are equal to each other (DA1), and in the second pattern element PE2 along the second slit SU2, the distance intervals between the sub-patterns PT4, PT1, and PT5 are also equal to each other (DA1).

[0055] Figure 4 This is a view when the position detection pattern PT passes through the second slit SU2. Figure 5 This is a graph showing the time-series distribution of the amount of light detected by the photosensor PD when the position detection pattern PT passes through the second slit SU2.

[0056] The side length D (size) of the sub-patterns PT1 to PT5 is larger than the slit width L of the second slit SU2 and smaller than the adjacent slit distance interval M. In addition, the adjacent distance interval DA of the sub-patterns PT1 to PT5 is also larger than the slit width L. In addition, the pitch interval P of the sub-patterns PT1 to PT5 corresponds to the lengths of the adjacent slit distance interval M and the slit width L. However, here, the pitch interval P is expressed along the direction of the first slit SU1 and the second slit SU2.

[0057] The slit width L here is larger than the exposure area size (also referred to as the cell size) of one micromirror of the DMD 22 and is also larger in the stage moving direction, i.e., the main scanning direction (for example, it can be configured to have twice the width). The sub-patterns PT1 to PT5 are all patterns formed by a specified number of block parts of micromirrors, but when the position detection pattern PT passes through the first slit SU1 and the second slit SU2, the amount of light detected through the slit width L is based on the light from multiple micromirrors in the main scanning direction.

[0058] When the position detection pattern PT with such dimensions and configuration intervals from the slit passes through a specific second slit SU2, the sub-pattern PT2 of the first pattern element PE1 first passes through the second slit SU2. Then, the second pattern element PE2 including the central sub-pattern PT1 passes through this slit, and finally the sub-pattern PT3 of the first pattern element PE1 passes through.

[0059] At Figure 4 the upper part, a state is shown where the position detection pattern PT is located at a position of the second slit SU2 far from the light-shielding portion 40 and is about to enter the next second slit SU2 respectively. On the other hand, at Figure 4 the lower part, a state is shown where the sub-patterns PT1 to PT5 of the position detection pattern PT are respectively in the process of passing through the second slit SU2 and are located at the middle point.

[0060] As described above, the length D of the sub-patterns PT1 to PT5 is larger than the slit width L and smaller than the slit distance interval M. Therefore, during the period when the sub-patterns PT1 to PT5 respectively pass through the corresponding second slit SU2, the amount of light is always detected by the photosensor PD. On the other hand, a part of the pattern does not enter the adjacent second slit SU2.

[0061] As described above, the size of the photosensor PD is larger than the slit region ST. Therefore, when the position detection pattern PT passes through a specified second slit SU2, it is possible to obtainFigure 5 The light quantity time series distribution shown Figure 5 The light quantity time series distribution (A) represents the light quantity time series distribution detected by the light sensor PD when the position detection pattern PT passes through the uppermost slit in the second slit SU2. The light quantity time series distribution (B) represents the light quantity time series distribution when the position detection pattern PT passes through the upper two segments of the second slit SU2. Moreover, the light quantity time series distribution (C) represents the light quantity time series distribution when the position detection pattern PT passes through the upper three segments of the second slit SU2.

[0062] Thereafter, during the period when the position detection pattern PT passes through the specified second slit SU2, the sub-patterns PT1 to PT5 respectively pass through the corresponding slits, whereby the light sensor PD continuously detects the light quantity time series distribution (D). Here, the position at the average of the positions when crossing the threshold value during the rise and fall of the light quantity signal is detected as the slit position. When the position detection pattern PT passes through the first slit SU1, the same light quantity time series distribution can also be obtained.

[0063] In the case of generating an assembly error of the exposure head or the like, a deviation occurs between the measured slit position and the previously determined reference slit position. This indicates that the light of the position detection pattern PT does not pass through the slit at the timing when it should have been measured. Therefore, the difference between the measured slit position (i.e., the exposure position) and the reference exposure position is detected as the offset amount.

[0064] In addition, for example, as shown in Japanese Patent Laid-Open No. 2015-142036, the above-described method for detecting the offset amount based on the light quantity time series distribution is an offset amount detection on the premise that both the light intensity distribution / light quantity distribution along the main scanning direction and the light quantity distribution based on the time series detected by the sensor are approximately Gaussian distributions and have a correlation. By setting the widths D of the sub-patterns PT1 to PT5 to be sufficiently larger than the slit width L, the offset detection accuracy can be improved.

[0065] Figure 6 is a diagram showing the exposure position offset of the slit. Here, the position detection pattern PT is simplified to a pattern composed of a single sub-pattern PT1, and an example of calculating the exposure position offset of the first slit SU1 and the second slit SU2 will be described.

[0066] When there is an offset in the slit position, the position offset dx of the sub-pattern PT1 along the main scanning direction X is directly measured in the first slit SU1 and the second slit SU2, respectively. On the other hand, since the slit tilt angle of the offset of the sub-pattern PT1 along the sub-scanning direction Y is 45°, it is equal to the displacement dx along the main scanning direction X in the first slit SU1, and the displacement -dx in the opposite direction (vector reverse) is obtained in the second slit SU2. Therefore, the measured value d1 of SU1 and the measured value d2 of SU2 are represented by the following equations.

[0067] d1 = dx + dy d2 = dx - dy ···(1)

[0068] Therefore, for the first slit SU1 and the second slit SU2, the slit position offset dx along the main scanning direction X and the slit position offset dy along the sub-scanning direction Y are obtained by the following equation (2) obtained from equation (1). Here, the case where there are only two slits, the first slit SU1 and the second slit SU2, is illustrated. However, even when the first slit SU1 and the second slit SU2 are each composed of a plurality of slits, by measuring dx and dy of each slit of the first slit SU1 and the second slit SU2 and calculating the average value respectively, the average dx and the average dy can be obtained and substituted into the equation.

[0069] dx = (d1 + d2) / 2 dy = (d1 - d2) / 2 ···(2)

[0070] As described above, the calculation of the slit position offset in the case where the position detection pattern PT is simplified to one sub-pattern PT has been described. However, in practice, based on the light amount time series distribution obtained through the slits of the position detection pattern PT shown by Figure 4 and Figure 5 the slit position offset amount is calculated based on the above equation (2). Therefore, it can be said that the method for calculating the offset amount of the exposure position in the present embodiment calculates the offset amount of the exposure position based on the light amount time series distribution, without having the function of lighting a specific micromirror to detect the position information of its unit pattern and the slit position information when passing through the slit position.

[0071] In addition, when the first slits SU1, SU2 are formed at an inclination angle other than 45°, the offset of the slit position can also be calculated by considering tangent θ. In addition, the first slits SU1 and the second slits SU2 may not be symmetric with respect to the sub-scanning direction Y, and the first slits SU1 and the second slits SU2 may be set to different inclination angles or the first slits SU1, SU2 may be arranged alternately. In addition, as long as neither of the slits SU1 and SU2 is parallel to the main scanning direction or at least one of SU1 and SU2 is not parallel to the sub-scanning direction.

[0072] Thus, according to this embodiment, the exposure apparatus 10 has a light-shielding portion 40 provided with a first slit SU1 and a second slit SU2 arranged along the main scanning direction X. The exposure apparatus 10 scans light of the X-shaped discrete position detection pattern PT configured with square-shaped sub-patterns PT1 to PT5 with respect to the first and second slits SU1 and SU2 of the light-shielding portion 40 along the main scanning direction X.

[0073] By forming the first slit SU1 and the second slit SU2 that are opposite in polarity and line-symmetric with respect to the sub-scanning direction Y and arranged along the same scanning line in the main scanning direction X, and scanning the position detection pattern PT composed of a first pattern element PE1 and a second pattern element PE2 parallel to the first slit SU1 and the second slit SU2, a narrow slit region ST can be formed in the sub-scanning direction Y. In addition, the exposure position can be detected by one scan.

[0074] In addition, by forming the position detection pattern PT from discretely arranged sub-patterns PT1 to PT5 and setting the size and distance interval to provide a period during which the light amount cannot be detected, the entire range of the photosensor PD can be used for light amount detection when detecting the maximum light amount. Through the light amount detection over the entire range, the rise and fall of the light amount time series distribution become steep, and the detection accuracy is improved.

[0075] In addition, the discrete position detection pattern PT may be formed by sub-patterns other than five, but in order to prevent detection of an incorrect light amount when the threshold is set to half of the maximum light amount, it may be set to an odd number.

[0076] Next, Figure 7 and Figure 8 the exposure apparatus of the second embodiment will be described. In the second embodiment, the position detection pattern is composed of continuous bar-shaped pattern elements.

[0077] Figure 7 FIG. is a diagram showing the position detection pattern of the second embodiment. The position detection pattern PT' is configured as an X-shaped pattern in which bar-shaped first and second pattern elements PE'1 and PE'2 cross at the center in a symmetric manner. The position detection pattern PT' corresponds to a pattern shape in which the gaps between adjacent sub-patterns are eliminated with respect to the discrete position detection pattern PT composed of sub-patterns PT1 to PT5 shown in the first embodiment.

[0078] Figure 8This is a diagram showing the state of the position detection pattern of the second embodiment when passing through the second slit SU2. In the position detection pattern PT' composed of consecutive pattern elements PE'1 and PE'2, the same light quantity time series distribution as that of the first embodiment can also be obtained. Therefore, the position of the slit (exposure position) can be calculated in the same manner as in the first embodiment. Among them, the lengths D' of the first and second pattern elements PE'1 and PE'2 are determined such that when the second pattern element PE'2 is at the middle position of the second slit SU2, both ends of the first pattern element PE'1 overlap with the adjacent second slit SU2.

[0079] Next, Figures 9 to 11 An exposure apparatus of the third embodiment will be described. In the third embodiment, the position detection pattern is composed of thin-line sub-patterns.

[0080] Figure 9 This is a diagram showing the position detection pattern of the third embodiment. The position detection pattern PT'' is composed of a first pattern element PE''1 and a second pattern element PE''2. The first pattern element PE''1 is composed of rod-shaped sub-patterns PT''1 to PT''3, and the second pattern element PE''2 is composed of rod-shaped sub-patterns PT''4 to PT''6. The sub-pattern PT''2 is longer than two adjacent sub-patterns PT''1 and PT''3, and the first pattern element PE''1 is symmetric (line-symmetric) with respect to the sub-pattern PT''2. The same applies to the second pattern element PE''2. The sub-pattern PT''5 is longer than two adjacent sub-patterns PT''4 and PT''6 and is symmetrically arranged.

[0081] The position detection pattern PT'' is a pattern symmetric with respect to the main scanning direction X where the sub-patterns PT''2 and PT''5 cross at the center. The widths D'' of the sub-patterns PT''1 to PT''6 are shorter than the slit width L. The pitch interval P between the sub-patterns PT''1 to PT''3 corresponds to the length of the slit distance interval M and the slit width L.

[0082] Figure 10 This is a diagram of the position detection pattern PT'' of the third embodiment when passing through the second slit SU2. Figure 11 This is a graph showing the light quantity time series distribution detected by the photosensor PD when the position detection pattern PT'' of the third embodiment passes through the second slit SU2.

[0083] In the third embodiment, the same light quantity time series distribution as that of the first and second embodiments can also be obtained. However, since the widths D'' of the sub-patterns PT''1 to PT''6 are thin lines and shorter than the slit width L, the rise and fall of the light quantity time series distribution become steeper. Therefore, the slit position can be detected with high precision.

[0084] As described above, in the first to third embodiments, the cross-shaped position detection pattern formed of discrete or continuous sub-patterns has been exemplified, but it may have other structures as long as it is a position detection pattern formed of a first pattern element and a second pattern element that are parallel to the first slit SU1 and the second slit SU2, respectively, and that shares a part of the pattern at the center or other parts.

[0085] Figure 12 FIG. is a diagram showing a modified example of the position detection pattern. As Figure 12 shown in (A) to (F) thereof, it may be formed of a T-shaped or dot-shaped sub-pattern, and further, a continuous sub-pattern and a discrete sub-pattern may be combined. Since the exposure apparatus 10 is a maskless exposure apparatus having the DMD 22, it is capable of projecting light of various position detection patterns.

Claims

1. An exposure device, characterized in that: The exposure device has: A light-shielding part, in which a first slit and a second slit having positive and negative inclination angles with respect to the sub-scanning direction are arranged in the main scanning direction; An exposure part, which can project light of a position detection pattern to the projection position of the light-shielding part; A light-receiving part, which receives the light passing through the first slit and the second slit; And A detection part, which detects the exposure position according to the signal output from the light-receiving part when the light of the position detection pattern is scanned in the main scanning direction, The exposure part projects the light of the position detection pattern to the light-shielding part, and the position detection pattern is composed of continuous or discrete first pattern elements parallel to the first slit and continuous or discrete second pattern elements parallel to the second slit, and a part of the first pattern elements and the second pattern elements is shared.

2. The exposure device according to claim 1, characterized in that: The exposure part projects the light of a cross-shaped pattern formed by the intersection of the first pattern elements and the second pattern elements as the light of the position detection pattern to the light-shielding part.

3. The exposure device according to claim 2, characterized in that: The exposure part projects the light of a cross-shaped pattern composed of discrete first pattern elements and discrete second pattern elements and sharing a position sub-pattern at the center or near the center of the first pattern elements and the second pattern elements to the light-shielding part, wherein the first pattern elements are composed of a plurality of sub-patterns arranged at a specified interval, and the second pattern elements are composed of a plurality of sub-patterns arranged at a specified interval.

4. The exposure device according to claim 3, characterized in that: A plurality of first slits and a plurality of second slits converge and are arranged in sequence along the main scanning direction, The distance interval between adjacent sub-patterns of the first pattern elements corresponds to the distance interval and the slit width length of the first slits, and the distance interval between adjacent sub-patterns of the second pattern elements corresponds to the distance interval and the slit width length of the second slits.

5. The exposure device according to claim 2, characterized in that: The exposure part projects the light of a cross-shaped pattern composed of a linear continuous first pattern element and a linear continuous second pattern element to the light-shielding part.

6. The exposure device according to claim 5, characterized in that: The exposure part projects the light of a cross-shaped pattern composed of a plurality of arranged linear continuous first pattern elements and a plurality of arranged linear continuous second pattern elements to the light-shielding part, The line widths of the first pattern elements and the second pattern elements are respectively smaller than the slit widths of the first slits and the second slits.

7. The exposure device according to claim 6, characterized in that: A plurality of first slits and a plurality of second slits converge and are arranged in sequence along the main scanning direction, The arrangement distance interval of the continuous first pattern elements corresponds to the distance interval and the slit width length of the first slits, and the arrangement distance interval of the continuous second pattern elements corresponds to the distance interval and the slit width length of the second slits.

8. The exposure apparatus according to any one of claims 1 to 4, wherein: the discrete sub-patterns of the first pattern element and the second pattern element are formed of circular or rectangular patterns.

9. An exposure method, wherein light of a position detection pattern is projected onto a light-shielding portion having a first slit and a second slit arranged in a main scanning direction and having positive and negative inclination angles with respect to a sub-scanning direction, and an exposure position is detected based on signals output from a light-receiving portion that receives light passing through the first slit and the second slit when the light of the position detection pattern is scanned in the main scanning direction. The method is characterized in that: light of the position detection pattern is projected onto the light-shielding portion, the position detection pattern being composed of a continuous or discrete first pattern element parallel to the first slit and a continuous or discrete second pattern element parallel to the second slit, and a part of the first pattern element and the second pattern element being common.

10. An exposure apparatus, wherein: the exposure apparatus has a light-shielding portion formed with a first slit and a second slit having positive and negative inclination angles with respect to a sub-scanning direction; when light of a position detection pattern is scanned with respect to the light-shielding portion, a position detection pattern composed of sub-patterns respectively parallel to the first slit and the second slit can sequentially pass through the first slit and the second slit.

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