Semiconductor device and method for forming the same

Abstract

This application discloses a semiconductor device and a method for forming the same, comprising: providing a substrate having a conductive plug disposed therein, the substrate including a trench exposing at least a portion of the conductive plug; forming a metal layer on top of the conductive plug within the trench; performing an annealing process to form a metal silicide on the metal layer on top of the conductive plug; performing an oxygen reduction treatment on the metal silicide to reduce metal oxides in the metal silicide; and removing the remaining metal layer after the oxygen reduction treatment. This application can reduce the resistivity of corresponding interconnect contact structures in a semiconductor device and improve the conductive performance of the interconnect contact structures.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a semiconductor device and a method for forming the same. Background Art

[0002] Conductive contact surfaces and corresponding conductive plugs are widely used in various semiconductor devices. These structures enable electrical interconnection between components within a semiconductor device and / or between multiple semiconductor devices, ensuring that the semiconductor device provides its desired functionality. While researching semiconductor contact technology, the inventors discovered that the contact structure containing the contact surface exhibits high resistivity, which can easily affect the conductive performance of the corresponding semiconductor device. Summary of the Invention

[0003] In view of this, the present application provides a semiconductor device and a method for forming the same to solve the problem of high resistivity of the contact structure in the semiconductor device.

[0004] The present application provides a method for forming a semiconductor device, comprising:

[0005] Providing a substrate, wherein a conductive plug is provided in the substrate, the substrate comprising a trench, wherein the trench exposes at least a portion of the conductive plug;

[0006] forming a metal layer on top of the conductive plug in the trench;

[0007] Performing an annealing process to form metal silicide on the metal layer on the top of the conductive plug;

[0008] performing an oxygen reduction treatment on the metal silicide to reduce metal oxides in the metal silicide;

[0009] Remove the metal layer remaining after the oxygen reduction treatment.

[0010] Optionally, the method of performing oxygen reduction treatment on the metal silicide further includes: performing nitridation treatment on the metal silicide to convert the metal oxide into metal nitride oxide.

[0011] Optionally, the method of performing oxygen reduction treatment on the metal silicide further includes: performing reduction treatment on the metal silicide to reduce the metal oxide.

[0012] Optionally, the method of performing oxygen reduction treatment on the metal silicide further includes: performing reduction treatment on the metal silicide before performing nitridation treatment on the metal silicide.

[0013] Optionally, the method of performing oxygen reduction treatment on the metal silicide further includes: performing reduction treatment on the metal silicide after performing nitridation treatment on the metal silicide.

[0014] Optionally, the gas used in the reduction treatment includes hydrogen and oxygen.

[0015] Optionally, the material of the metal layer includes at least one of cobalt, titanium, nickel and manganese.

[0016] Optionally, the conductive plug is made of polysilicon.

[0017] Optionally, after forming a metal layer on top of the conductive plug in the trench, the forming method further comprises: forming a metal nitride on the metal layer on top of the conductive plug.

[0018] Optionally, the substrate includes an active area and an isolation area, and the conductive plug contacts the active area and the isolation area respectively.

[0019] Optionally, the method of performing an annealing process to form a metal silicide on the metal layer at the top of the conductive plug further includes: performing an annealing process to cause the top of the conductive plug to react with the contacting metal layer; and removing the unreacted metal layer after the annealing process to obtain the metal silicide.

[0020] Optionally, the method for forming metal silicide on the metal layer on the top of the conductive plug further includes: after removing the unreacted metal layer, introducing a hydrogen and oxygen mixed gas into the trench.

[0021] Optionally, the forming method further comprises: after forming a metal layer on top of the conductive plug, introducing a hydrogen and oxygen mixed gas into the trench.

[0022] The present application also provides a semiconductor device, comprising:

[0023] a substrate, wherein a conductive plug is provided in the substrate, the substrate comprising a groove, and the groove exposing at least a portion of the conductive plug;

[0024] an interconnect contact structure located on the surface of the conductive plug exposed in the trench;

[0025] The substrate includes an active area and an isolation area, and the conductive plugs contact the active area and the isolation area respectively.

[0026] Optionally, the interconnect contact structure further includes metal oxynitride.

[0027] Optionally, the material of the metal layer on the top of the conductive plug includes at least one of cobalt, titanium, nickel and manganese.

[0028] Optionally, the conductive plug is made of polysilicon.

[0029] Optionally, the interconnect contact structure further includes metal nitride.

[0030] Optionally, adjacent conductive plugs contact the isolation region at locations close to each other, and contact the active region at locations far away from each other.

[0031] The semiconductor device and its formation method can form a metal layer on top of the conductive plug in the trench, and then perform an annealing process to form a metal silicide on the metal layer on top of the conductive plug, providing an interconnection contact structure for the conductive plug and reducing the contact resistance on the top of the conductive plug. The metal silicide can also be subjected to an oxygen reduction treatment to reduce metal oxides in the interconnection contact structure, reduce the resistivity of the interconnection contact structure, and improve its conductivity. The metal layer remaining after the oxygen reduction treatment is then removed to retain the interconnection contact structure on top of the conductive plug, so that the formed semiconductor device can be interconnected with other devices, and the corresponding interconnection contact structure has low resistivity and good conductivity, thereby optimizing the corresponding interconnection performance.

[0032] The present application uses at least one stable oxygen reduction process such as nitridation treatment and / or reduction treatment to reduce the oxygen content of the interconnect contact structure, which can effectively reduce the content of metal oxides with high resistivity in the interconnect contact structure, minimize the resistivity of the interconnect contact structure, and improve the conductive performance of the interconnect contact structure.

[0033] It can be seen that the present application can optimize the interconnection performance of the corresponding interconnection contact structure from multiple aspects, thereby optimizing the interconnection performance of the resulting semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0035] Figure 1 Schematic diagram of a conductive plug and corresponding contact surface in a semiconductor device;

[0036] Figure 2 This is a flow chart of a method for forming a semiconductor device in one embodiment of the present application;

[0037] Figure 3a 、 Figure 3b 、 Figure 3c 、 Figure 3d and Figure 3e This is a schematic diagram of the structure obtained in each step of an embodiment of the present application;

[0038] Figure 4a 、 Figure 4b and Figure 4cThis is a schematic diagram of the relevant structures of the oxygen reduction treatment process in one embodiment of the present application;

[0039] Figure 5 FIG. 1 is a schematic diagram of the structure of a semiconductor device according to an embodiment of the present application. DETAILED DESCRIPTION

[0040] The inventors found during the research that in most semiconductor devices, the contact surface corresponding to the conductive plug can be referred to Figure 1 As shown, during and / or after the formation, it is easily oxidized by oxygen in ambient gases such as air, resulting in high resistivity of the contact surface, thereby affecting the conductive performance of the contact surface.

[0041] To address the above-mentioned problems, the present application forms a metal layer on top of a conductive plug and then performs an annealing process to form a metal silicide on the metal layer on top of the conductive plug to provide an interconnection contact structure for the conductive plug. The metal silicide is also subjected to an oxygen reduction treatment to reduce metal oxides in the interconnection contact structure, reduce the resistivity of the interconnection contact structure, and improve its conductivity. The metal layer remaining after the oxygen reduction treatment is then removed to retain the interconnection contact structure on top of the conductive plug, so that the formed semiconductor device can be interconnected with other devices. The corresponding interconnection contact structure has low resistivity and good conductivity.

[0042] The following, in conjunction with the accompanying drawings, clearly and completely describes the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of this application. In the absence of conflict, the following embodiments and their technical features can be combined with each other.

[0043] In a first aspect, the present application provides a method for forming a semiconductor device, referring to Figure 2 As shown, the forming method includes S110 to S150.

[0044] S110, reference Figure 3a As shown, a substrate 210 is provided. A conductive plug 211 is disposed in the substrate 210 . The substrate 210 includes a trench 212 . The trench 212 exposes at least a portion of the conductive plug 211 .

[0045] Specifically, the substrate 210 may also include electrodes, bit lines and / or other functional areas that need to be interconnected with other devices (not shown in the figure). Figure 3bAs shown, the substrate 210 may include an active area 213 and an isolation area 214. The active area 213 may form a corresponding functional area within the substrate 210. The isolation area 214 may be an STI (shallow trench) isolation structure. The isolation area 214 may isolate each active area. The conductive plug 211 contacts the active area 213 and the isolation area 214 respectively, so that the conductive plug 211 can independently contact the corresponding active area 213 and electrically lead the corresponding active area 213 out. Specifically, as Figure 3b As shown, adjacent conductive plugs 211 contact the isolation region 214 where they are close to each other, and contact the active region 213 where they are far away from each other, so that the arrangement of the active region 213 and the isolation region 214 is more regular, which can further ensure the stability of the corresponding interconnection characteristics.

[0046] The conductive plug 211 may be formed by filling a conductive material in the groove 212. The groove 212 may be in the shape of a long strip or a through-hole. The conductive plug 211 may also contact at least one interconnection object to provide an interconnection interface for the interconnection object in contact, so that other devices can be interconnected with the interconnection object through the conductive plug 211. The above-mentioned interconnection object may include a doped region (such as the active region 213) located in the substrate 210. The conductive plug 211 may be formed on the surface of the doped region in the substrate 210 to electrically lead out the doped region.

[0047] In this embodiment, the conductive plug 211 is made of polysilicon, doped polysilicon, or other silicon-containing conductive materials. Optionally, the conductive plug 211 is made of polysilicon to provide good conductivity and react with the metal layer 221 on top thereof to form a metal silicide 222 through an annealing process.

[0048] In one embodiment, after step S110 , the above-mentioned formation method may further include: performing a first cleaning process on the substrate 210 to remove impurities on the surface of the substrate 210 , and further remove impurities between the subsequently formed metal layer 221 and the conductive plug 211 , thereby improving the quality of the formed metal layer 221 .

[0049] S120, reference Figure 3c As shown, a metal layer 221 is formed on top of the conductive plug 211 in the trench 212 .

[0050] Specifically, the above step S120 can form a metal layer 221 on the surface of the substrate 210, for example, by forming the metal layer 221 through a process such as sputtering coating. The metal layer 221 can conformally cover the substrate 210, that is, Figure 3c As shown, the metal layer 221 covers the substrate 210, the sidewalls of the trench 212 and the surface of the conductive plug 211, and the shape characteristics of the surface of the substrate 210 before and after the formation of the metal layer 221 remain substantially the same.

[0051] In one embodiment, the material of the metal layer 221 includes at least one of cobalt, titanium, nickel and manganese, so as to improve the conductivity and stability of the subsequently formed metal silicide 222 and optimize the performance of the formed interconnect contact structure.

[0052] In one embodiment, after step S120, the formation method may further include: forming a metal nitride on the metal layer 221 on top of the conductive plug 211 to prevent the location from being oxidized by oxygen in the ambient gas, thereby reducing the degree of oxidation of the subsequently obtained metal silicide 222, thereby reducing the pressure of the oxygen reduction treatment on the metal silicide 222.

[0053] In one embodiment, after step S120, the formation method may further include: after forming the metal layer 221 on top of the conductive plug 211, introducing a hydrogen-oxygen mixed gas into the trench 212 to prevent oxidation of the metal layer 221 on top of the conductive plug 211, and promptly reducing the corresponding metal oxide after the oxidation of this portion of the metal layer 221. Optionally, the ratio of hydrogen to oxygen in the hydrogen-oxygen mixed gas may range from 100:8 to 100:2, for example, a ratio of 100:8, 100:5, or 100:2, etc., to fully reduce the corresponding metal oxide and improve the safety of the reduction process.

[0054] S130, perform annealing process, refer to Figure 3d As shown, after the annealing process, the metal layer 221 on top of the conductive plug 211 reacts with the material on top of the conductive plug 211 to form a metal silicide 222. The metal silicide 222 can provide an interconnection contact structure 220 for the conductive plug 211. The resistivity of the metal silicide 222 is lower than that of the conductive plug 211, so that the resistivity of the formed interconnection contact structure 220 is relatively low, reducing the impedance during the interconnection process between the conductive plug 211 and the corresponding interconnection object, thereby improving the corresponding interconnection performance.

[0055] In one embodiment, in step S130, an annealing process is performed, and the method for forming a metal silicide 222 from the metal layer 221 on the top of the conductive plug 211 further includes: performing an annealing process to cause the top of the conductive plug 211 to react with the contacting metal layer 221; after the annealing process, removing the unreacted metal layer 221 to obtain the metal silicide 222, so as to reduce the metal included in the metal silicide 222 as much as possible to avoid subsequent oxidation by ambient gas, or reduce the degree of oxidation of the metal silicide 222 by ambient gas.

[0056] Furthermore, step S130 may further include: after removing the unreacted metal layer 221, introducing a hydrogen-oxygen mixed gas into the trench 212 to prevent oxidation of the metal remaining in the metal silicide 222, and promptly reducing the corresponding metal oxide after the residual metal is oxidized. Optionally, the ratio of hydrogen to oxygen in the hydrogen-oxygen mixed gas may range from 100:8 to 100:2, for example, a ratio of hydrogen to oxygen including 100:8, 100:5, or 100:2, etc., to fully reduce the corresponding metal oxide and improve the safety of the reduction process.

[0057] In one embodiment, after step S130, the above-mentioned formation method may further include: performing a second cleaning treatment on the substrate 210 after the oxygen reduction treatment to remove impurities on the surface of the current metal layer 221, and in the subsequent removal process, removing the remaining metal layer 221 as much as possible to improve the corresponding removal effect.

[0058] S140 , performing an oxygen reduction treatment on the metal silicide 222 to reduce metal oxides in the metal silicide 222 , lower the resistivity of the metal silicide 222 , and improve the conductivity of the metal silicide 222 .

[0059] During their research, the inventors discovered that metal elements remain on the surface of the metal silicide 222 obtained through the annealing process. These metal elements are easily oxidized by oxygen in ambient gases such as air to form corresponding metal oxides. Due to the high resistivity of the metal oxides, the resistivity of the interconnect contact structure 220 is easily increased, thereby affecting the conductive performance of the interconnect contact structure 220. Based on this, the above-mentioned step S140 performs an oxygen reduction treatment on the metal silicide 222 to reduce the metal oxide in the metal silicide 222, thereby reducing the resistivity of the metal silicide 222 and improving the conductive performance of the metal silicide 222.

[0060] S150, reference Figure 3e As shown, the metal layer 221 remaining after the oxygen reduction treatment is removed to retain the interconnection contact structure 220 (such as metal silicide 222) on the top of the conductive plug 211, so that the formed semiconductor device can be interconnected with other devices.

[0061] In the above step S150 , an etching process such as wet etching may be used to remove the metal layer 221 remaining after the oxygen reduction treatment to ensure stability during the removal process.

[0062] In the above-mentioned method for forming a semiconductor device, a metal layer 221 is formed on top of the conductive plug 211 in the trench 212, and then an annealing process is performed to form a metal silicide 222 on the metal layer 221 on top of the conductive plug 211, providing an interconnection contact structure 220 for the conductive plug 211. The metal silicide 222 is subjected to an oxygen reduction treatment to reduce metal oxides in the interconnection contact structure 220, reduce the resistivity of the interconnection contact structure 220, and improve its conductivity. The remaining metal layer after the oxygen reduction treatment is then removed to retain the interconnection contact structure 220 on top of the conductive plug 211, so that the formed semiconductor device can be interconnected with other devices. The corresponding interconnection contact structure 220 has low resistivity and good conductivity, thereby optimizing the corresponding interconnection performance, thereby optimizing the interconnection performance of the formed semiconductor device.

[0063] In one embodiment, the metal elements remaining on the surface of the metal silicide 222 are oxidized by oxygen in the ambient gas such as air, and the formed metal oxide can be referred to as Figure 4a As shown, the metal oxide 223 is located above the interconnect contact structure 220 formed by the metal silicide 222 and has a relatively high resistivity, resulting in a high resistivity of the interconnect contact structure 220, which affects the conductive performance of the interconnect contact structure 220. To address this issue, the above-mentioned method for forming a semiconductor device performs an oxygen reduction treatment on the metal silicide 222 to reduce the metal oxide in the metal silicide 222.

[0064] In one example, in step S140, the method of performing oxygen reduction treatment on the metal silicide 222 further includes: performing nitriding treatment on the metal silicide 222, such as Figure 4b As shown, the nitridation treatment can convert the metal oxide 223 into a metal oxynitride 224 to reduce the corresponding resistivity, thereby reducing the resistivity of the corresponding interconnect contact structure 220 and improving the conductive performance of the interconnect contact structure 220. Optionally, this embodiment can use nitrogen ion bombardment or other methods to perform the nitridation treatment, and the nitrogen ions react with the metal oxide 223 to obtain a metal oxynitride 224 with relatively low resistivity. Furthermore, the nitrogen ion bombardment process can control the reaction degree of the corresponding chemical reaction by controlling process parameters such as the energy of the nitrogen ions and the treatment time, so as to ensure the effect of the nitridation treatment and improve the conversion rate of the metal oxide 223 to the metal oxynitride 224.

[0065] In one example, in step S140, the method of performing oxygen reduction treatment on the metal silicide 222 further includes: performing reduction treatment on the metal silicide 222 to reduce the metal oxide 223, for example, referring to Figure 4c As shown, the metal oxide 223 is reduced to the corresponding metal 225, thereby achieving the purpose of reducing the corresponding resistivity.

[0066] In one example, the method of performing oxygen reduction treatment on the metal silicide 222 further includes: performing a reduction treatment on the metal silicide 222 before performing a nitridation treatment on the metal silicide 222 to first reduce the metal oxide 223 therein to the corresponding metal, and then performing a nitridation treatment on the remaining metal oxide 223. This can reduce the process pressure during the nitridation process and ensure the conversion rate between the metal oxide 223 and the metal oxynitride 224 during the nitridation process, thereby further reducing the resistivity of the corresponding interconnect contact structure 220. In this example, the treatment time corresponding to the reduction treatment and the nitridation treatment can be set based on the material of the metal layer 221, the process parameters corresponding to each treatment process, and other characteristics to increase the degree of oxygen reduction of the metal silicide 222 and minimize the resistivity of the resulting interconnect contact structure 220.

[0067] In one example, the method of reducing the oxygen content of the metal silicide 222 further includes: after nitriding the metal silicide 222, reducing the metal silicide 222 to convert the metal oxide 223 corresponding to the metal silicide 222, and then reducing the remaining metal oxide 223 to the corresponding metal, thereby minimizing the content of high-resistivity compounds such as the metal oxide 223 in the corresponding interconnect contact structure 220, thereby minimizing the resistivity of the interconnect contact structure 220. In this example, the treatment times for the nitriding and reduction treatments can be set based on characteristics such as the material of the metal layer 221 and the process parameters corresponding to the respective treatment processes, so as to increase the degree of oxygen reduction of the metal silicide 222 and minimize the resistivity of the interconnect contact structure 220.

[0068] Optionally, each of the above examples can perform the above-mentioned reduction treatment on the metal silicide 222 and related structures by introducing relevant reducing gases into the groove 212. In one example, the gas used for the reduction treatment includes at least a reducing gas such as hydrogen, for example, a mixed gas of hydrogen and oxygen can be used to ensure the corresponding reduction effect and improve the safety performance of the reduction treatment process. Optionally, in the gas used for the reduction treatment, the ratio between hydrogen and oxygen can range from 100:8 to 100:2, for example, the ratio between hydrogen and oxygen includes 100:8, 100:5 or 100:2, etc., to fully reduce the corresponding metal oxide 223, prevent safety accidents such as explosions, and improve the stability of the reducing gas during the reduction process and the safety of the corresponding reduction process.

[0069] In the above method for forming a semiconductor device, a metal layer 221 can be formed on top of the conductive plug 211 in the trench 212, and then an annealing process can be performed to form a metal silicide 222 on the metal layer 221 on top of the conductive plug 211, providing an interconnection contact structure 220 for the conductive plug 211. The interconnection contact structure 220 formed by the metal silicide 222 can also be subjected to an oxygen reduction treatment to reduce metal oxides in the interconnection contact structure 220, reduce the resistivity of the interconnection contact structure 220, and improve its conductivity. The metal layer remaining after the oxygen reduction treatment is then removed to retain the interconnection contact structure 220 on top of the conductive plug 211, so that the formed semiconductor device can be interconnected with other devices, and the corresponding interconnection contact structure 220 has low resistivity and good conductivity, thereby optimizing the corresponding interconnection performance. Furthermore, the above-described method for forming a semiconductor device utilizes at least one stable oxygen reduction process, such as nitridation and / or reduction, to reduce the oxygen content of the interconnect contact structure 220. This effectively reduces the content of high-resistivity metal oxides in the interconnect contact structure 220, thereby minimizing the resistivity of the interconnect contact structure 220 and improving the conductive performance of the interconnect contact structure 220. Thus, the above-described method for forming a semiconductor device can optimize the interconnect performance of the corresponding interconnect contact structure 220 in multiple aspects, thereby optimizing the interconnect performance of the resulting semiconductor device.

[0070] In some application examples, the above-mentioned semiconductor device may be a memory or a partial structure of a memory, and the conductive plug 211 may include a bit line plug for connecting a bit line. The interconnection contact structure 220 corresponding to the bit line plug has a low resistivity, which can improve the interconnection performance of the bit line plug, thereby optimizing the performance of the corresponding memory.

[0071] In a second aspect, the present application provides a semiconductor device, Figure 5 As shown, the semiconductor device includes:

[0072] A substrate 210 , wherein a conductive plug 211 is provided in the substrate 210 , and the substrate 210 includes a groove 212 , wherein the groove 212 exposes at least a portion of the conductive plug 211 ;

[0073] The interconnection contact structure 220 is located on the surface of the conductive plug 211 exposed by the trench 212. Optionally, the interconnection contact structure 220 can be obtained by subjecting the metal silicide 222 to an oxygen reduction treatment. For example, the metal layer 221 on the top of the conductive plug 211 can be annealed to form the metal silicide 222, and then the metal silicide 222 can be subjected to an oxygen reduction treatment to obtain the interconnection contact structure 220.

[0074] The substrate 210 may include an active region 213 and an isolation region 214. The active region 213 may form a corresponding functional region within the substrate 210. The isolation region 214 may be an STI (shallow trench) isolation structure, isolating the active regions. The conductive plugs 211 contact the active region 213 and the isolation region 214, respectively. Thus, the conductive plugs 211 can independently contact the corresponding active region 213 and electrically lead the corresponding active region 213 out.

[0075] Specifically, if Figure 5 As shown, adjacent conductive plugs 211 contact the isolation region 214 where they are close to each other, and contact the active region 213 where they are far away from each other, so that the arrangement of the active region 213 and the isolation region 214 is more regular, which can further ensure the stability of the corresponding interconnection characteristics.

[0076] Optionally, the material of the metal layer 221 on the top of the conductive plug 211 includes at least one of cobalt, titanium, nickel and manganese, so as to improve the conductivity and stability of the subsequently formed metal silicide 222 and optimize the performance of the formed interconnect contact structure.

[0077] Optionally, the conductive plug 211 is made of polysilicon, doped polysilicon, or other silicon-containing conductive materials. Optionally, the conductive plug 211 is made of polysilicon so that the conductive plug 211 has good conductivity and can react with the metal layer 221 on top thereof to form a metal silicide 222 through an annealing process.

[0078] In one embodiment, the oxygen reduction treatment may include nitridation treatment and / or reduction treatment to reduce the corresponding metal oxides.

[0079] In one example, the interconnection contact structure 220 further includes a metal nitride oxide 224. Optionally, the metal nitride oxide 224 is obtained by performing a nitridation treatment on the metal silicide 222 to convert the metal oxide 223 in the metal silicide 222; Figure 4b As shown, the metal silicide 222 is nitrided to convert the metal oxide 223 into a metal nitride oxide 224 , thereby reducing the corresponding resistivity, thereby reducing the resistivity of the corresponding interconnection contact structure 220 and improving the conductive performance of the interconnection contact structure 220 .

[0080] In one example, the interconnect contact structure 220 further includes a metal nitride. Optionally, the metal nitride is formed by nitriding the metal layer on top of the conductive plug. For example, after forming the metal layer 221 on top of the conductive plug 211 within the trench 212, a metal nitride can be formed on the metal layer 221 on top of the conductive plug 211 to prevent oxidation of this location by oxygen in the ambient gas, thereby reducing the degree of oxidation of the subsequently formed metal silicide 222 and thereby reducing the pressure required for oxygen reduction treatment of the metal silicide 222.

[0081] The above-mentioned semiconductor device can be formed by the method for forming a semiconductor device described in any of the above-mentioned embodiments, and has all the beneficial effects of the method for forming a semiconductor device described in any of the above-mentioned embodiments, which will not be described in detail here.

[0082] In a third aspect, the present application provides a memory comprising the semiconductor device described in any one of the above embodiments.

[0083] Optionally, the substrate includes a bit line, and the bit line is arranged in the active region.

[0084] Optionally, the conductive plug includes a bit line plug.

[0085] The above memory includes the semiconductor device described in any of the above embodiments, and the corresponding interconnection contact structure has a low resistivity, which can improve the interconnection performance of the bit line plug and optimize the performance of the corresponding memory.

[0086] Although the present application has been shown and described with respect to one or more implementations, equivalent variations and modifications will occur to those skilled in the art based on reading and understanding this specification and the accompanying drawings. The present application includes all such modifications and variations and is limited only by the scope of the appended claims. In particular, with respect to the various functions performed by the above-mentioned components, the terms used to describe such components are intended to correspond to any component (unless otherwise indicated) that performs the specified function of the component (e.g., it is functionally equivalent), even if the structure is not necessarily equivalent to the disclosed structure that performs the function in the exemplary implementation of this specification shown herein.

[0087] That is, the above description is merely an embodiment of the present application and does not limit the patent scope of the present application. Any equivalent structural or equivalent process transformations made using the contents of the description and drawings of this application, such as the mutual combination of technical features between the various embodiments, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.

[0088] In addition, in the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present application. In addition, for structural elements with the same or similar characteristics, the present application may use the same or different reference numerals to identify them. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more features. In the description of the present application, "multiple" means two or more, unless otherwise clearly and specifically defined.

[0089] In this application, the word "exemplary" is used to mean "serving as an example, illustration or description". Any embodiment described in this application as "exemplary" is not necessarily to be construed as being more preferred or more advantageous than other embodiments. The above description is provided to enable any person skilled in the art to implement and use the present application. In the above description, various details are listed for the purpose of explanation. It should be understood that a person of ordinary skill in the art can recognize that the present application can be implemented without using these specific details. In other embodiments, well-known structures and processes will not be elaborated in detail to avoid obscuring the description of the present application with unnecessary details. Therefore, the present application is not intended to be limited to the embodiments shown, but is consistent with the widest scope consistent with the principles and features disclosed in this application.

Claims

1. A method for forming a semiconductor device, characterized in that: The forming method comprises: Providing a substrate, wherein a conductive plug is provided in the substrate, the substrate comprising a trench, wherein the trench exposes at least a portion of the conductive plug; forming a metal layer on top of the conductive plug in the trench; Performing an annealing process to form metal silicide on the metal layer on the top of the conductive plug; performing an oxygen reduction treatment on the metal silicide to reduce metal oxides in the metal silicide; Removing the metal layer remaining after oxygen reduction treatment; The method of performing oxygen reduction treatment on the metal silicide includes: performing reduction treatment on the metal silicide and then performing nitridation treatment; or performing nitridation treatment on the metal silicide and then performing reduction treatment.

2. The method for forming a semiconductor device according to claim 1, wherein: The gases used in the reduction treatment include hydrogen and oxygen.

3. The method for forming a semiconductor device according to claim 1, wherein: The material of the metal layer includes at least one of cobalt, titanium, nickel and manganese.

4. The method for forming a semiconductor device according to claim 1, wherein: The conductive plug is made of polysilicon.

5. The method for forming a semiconductor device according to claim 1, wherein: After forming a metal layer on top of the conductive plug in the trench, the forming method further includes: A metal nitride is formed on the metal layer on top of the conductive plug.

6. The method for forming a semiconductor device according to claim 1, wherein: The substrate includes an active area and an isolation area, and the conductive plugs contact the active area and the isolation area respectively.

7. The method for forming a semiconductor device according to claim 6, wherein: The adjacent conductive plugs contact the isolation region at their respective locations close to each other, and contact the active region at their respective locations far away from each other.

8. The method for forming a semiconductor device according to claim 1, wherein: The method of performing an annealing process to form a metal silicide on the metal layer on the top of the conductive plug further includes: Performing an annealing process to allow the top of the conductive plug to react with the contacting metal layer; After the annealing process, the unreacted metal layer is removed to obtain the metal silicide.

9. The method for forming a semiconductor device according to claim 8, wherein: The method for forming metal silicide on the metal layer on top of the conductive plug further includes: After removing the unreacted metal layer, a hydrogen and oxygen mixed gas is introduced into the trench.

10. The method for forming a semiconductor device according to claim 1, wherein: The forming method further comprises: After a metal layer is formed on top of the conductive plug, a hydrogen and oxygen mixed gas is introduced into the trench.

11. A semiconductor device manufactured by the method for forming a semiconductor device according to any one of claims 1 to 10, characterized in that: include: a substrate, wherein a conductive plug is provided in the substrate, the substrate comprising a groove, and the groove exposing at least a portion of the conductive plug; an interconnect contact structure located on the surface of the conductive plug exposed in the trench; The substrate includes an active area and an isolation area, and the conductive plugs contact the active area and the isolation area respectively.

12. The semiconductor device according to claim 11, wherein The interconnect contact structure further includes a metal oxynitride.

13. The semiconductor device according to claim 11, wherein The material of the metal layer on the top of the conductive plug includes at least one of cobalt, titanium, nickel and manganese.

14. The semiconductor device according to claim 11, wherein The conductive plug is made of polysilicon.

15. The semiconductor device according to claim 11, wherein The interconnect contact structure further includes metal nitride.

16. The semiconductor device according to claim 11, wherein The adjacent conductive plugs contact the isolation region at their respective locations close to each other, and contact the active region at their respective locations far away from each other.

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