A plasma irradiation platform simulating solar wind bombardment of space-grade chips

Abstract

This invention discloses a plasma irradiation platform for simulating solar wind bombardment of aerospace-grade chips. This platform is designed to simulate the blinding effect of high-speed solar wind plasma particle streams on aerospace-grade electronic chips. Specifically, it relates to the fields of pulsed plasma sources and chip irradiation detection technology, including an irradiation host system, a multi-pulse high-voltage, high-current power supply, a power controller, a vacuum chamber, a vacuum pump assembly, a high-speed pulse intake valve, a stage, and a real-time chip failure monitoring system. This invention can be used to simulate the impact of multi-pulse high-speed plasma irradiation on aerospace-grade chips in space on chip failure. The target plasma generated by the plasma source designed in this invention has parameters close to those of solar wind plasma in a space environment, making it an effective means of simulating the blinding effect of this phenomenon on aerospace-grade electronic chips.

Description

Technical Field

[0001] This invention belongs to the field of chip irradiation, specifically relating to a plasma irradiation platform that simulates solar wind bombardment of aerospace-grade chips. This platform is used to simulate the high-speed plasma particle stream of solar wind bombarding aerospace-grade electronic chips, causing them to become blind. Background Technology

[0002] During solar storms, large amounts of ultra-high-speed charged plasma clouds are ejected from the Sun's surface. These plasma clouds can reach speeds of hundreds or even thousands of kilometers per second, maintaining a propagation speed of hundreds of kilometers per second near Earth's orbit. When these ultra-high-speed charged plasma clouds bombard spacecraft, they can damage electronic components in satellite systems, seriously affecting spacecraft safety. Historically, there have been numerous cases of satellite electronic components being damaged due to violent solar storms. Therefore, it is necessary to conduct laboratory tests simulating solar wind irradiation of space-grade electronic chips to provide technical support for the safe operation of spacecraft. A multi-pulse plasma source generator can produce self-organized, compact plasma clouds with plasma speeds reaching hundreds of kilometers per second and a plasma density of approximately 10⁻⁶. 19 -10 23 The number of particles per cubic meter is close to the order of magnitude of particles during a solar wind outburst, making it an effective means of simulating solar wind bombardment of chips. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to provide an irradiation platform that simulates solar wind bombardment of aerospace-grade electronic chips, and to include a real-time monitoring system for chip electronics failure analysis.

[0004] To meet the above requirements, the technical solution adopted by the present invention is as follows:

[0005] A plasma irradiation platform simulating solar wind bombardment of aerospace-grade chips includes a plasma source host system, comprising a solenoid coil, a water-cooling structure, an inner electrode, and an outer electrode. The inner electrode is disposed in the cavity formed by the outer electrode, and the ports of the inner electrode and the outer electrode form a muzzle structure for emitting plasma.

[0006] The power supply system is configured to generate multi-pulse high voltage and high current;

[0007] The timing controller includes two timing controllers with different time precisions: a low-time-precision controller and a high-time-precision controller, wherein the high-time-precision controller is configured to control the power supply switching timing.

[0008] A vacuum chamber and a vacuum pump assembly, wherein the vacuum pump assembly includes a molecular pump and a mechanical pump;

[0009] High-speed pulse intake valve, used for rapid injection of working gas;

[0010] The stage is positioned above the three-dimensional electric guide rail at the tail of the platform and is positioned opposite to the axis of the inner and outer electrodes. The stage is configured to place the irradiated sample chip on it, and the movement of the three-dimensional electric guide rail enables the irradiated sample chip to receive different irradiation angles and irradiation distances.

[0011] A chip failure analysis real-time monitoring system is configured to perform real-time failure monitoring and analysis on the irradiated sample chip.

[0012] Furthermore, the high voltage is 1-30kV, and the high current is 100-800kA.

[0013] Furthermore, in the plasma source host system, the inner electrode, outer electrode, and solenoid coil all adopt a cylindrical structure and maintain a coaxial structure in spatial position; the solenoid coil and the water-cooling structure are connected by thermally conductive silicone grease to achieve heat dissipation; the solenoid coil and the inner electrode are connected by silicone sealant to achieve insulation; the inner electrode and the outer electrode are connected by polytetrafluoroethylene material to achieve insulation and vacuum sealing.

[0014] Furthermore, the plasma source host system adopts multi-pulse discharge with an adjustable repetition frequency of 1-50Hz and a total number of repetition pulses greater than 100.

[0015] Furthermore, the solenoid coil is located inside the inner electrode; by energizing the solenoid coil, a poloidal magnetic field is provided to the plasma generated in the plasma source host system, thereby achieving the effect of stabilizing and confining the plasma, and the plasma is directed through the nozzle towards the irradiated sample chip located on the stage.

[0016] Furthermore, the power system employs negative high-voltage discharge, and the external electrodes of the platform are grounded, ensuring single-point grounding. This guarantees the safety of the platform and personnel while also achieving a more robust plasma structure configuration.

[0017] Furthermore, the muzzle adopts a Laval nozzle structure, and the inner electrode at the muzzle is recessed while the outer electrode is expanded.

[0018] Furthermore, the stepping accuracy of the three-dimensional electric guide rail is less than 1 mm, and it can be adjusted in the forward, backward, left, right and up directions.

[0019] Furthermore, the stage is provided with a fixing slot for placing the irradiated sample chip.

[0020] Furthermore, the eight high-speed pulse intake valves are evenly distributed circumferentially on the outer electrode, with a circumferential angle difference of 45 degrees between every two intake valves.

[0021] In this invention, the plasma source host system adopts a coaxial structure. In the vacuum cavity at the front end of the host (specifically, the middle part between the outer and inner electrodes), the ratio of the inner radius to the outer radius is maintained at 1:1.5. The host system is 1 meter long. To achieve higher ejection velocity and collimation at the muzzle, a Laval nozzle structure is used, with an outer radius expansion ratio of 1:1.4 and an inner radius reduction ratio of 1:0.8. The inner and outer radii and the length of the host system are calculated based on a one-dimensional linear circuit point model, while the inner and outer radius expansion / reduction ratios are calculated based on the gas adiabatic expansion formula. The power supply system has adjustable pulse frequency (1-50Hz), adjustable total discharge duration (1-10s), single pulse period (0.5-10 milliseconds), adjustable high voltage (1-30kV), and adjustable current (100-800kA). The control parameters of the power supply system include charging indication, charging status display, charging completion feedback, circuit safety discharge, emergency stop protection button, pulse frequency, pulse discharge sequence, and fault record display. To meet the requirements of precise discharge timing control, two timing controllers with different time accuracies were employed: a low-time-accuracy controller (accuracy requirement less than 0.1s) and a high-time-accuracy controller (accuracy requirement less than 0.1us). The high-time-accuracy controller was developed based on an FPGA (Field-Programmable Gate Array) control program, achieving a timing control accuracy of 10 nanoseconds and a time jitter of less than 1 nanosecond, thus meeting the high timing accuracy requirements. To prevent interference to the control system during high-voltage power supply discharge, isolation between the control system and the high-voltage power supply was required. Therefore, an electro-optical module was used to convert electrical signals and utilize optical signal communication. The vacuum pump system includes a mechanical pump and a molecular pump, connected to the main vacuum of the host system via quick-connect couplings and knife-edge seals. The high-speed pulse intake valves are evenly distributed in eight locations around the circumference, with a circumferential angle difference of 45 degrees between every two intake valves to achieve uniform pulse intake. The three-dimensional electric guide rail is electrically controlled, with a single-step accuracy of less than 1 mm, a load capacity greater than 50 kg, and functions for forward, backward, left-right, and up-down movement. The solenoid coil has a hollow cylindrical structure with an outer insulating structure to prevent it from communicating with the inner wall of the host system. A copper cooling pipe is tightly attached to the inside of the solenoid, through which deionized water is circulated, which helps to cool the solenoid coil during the experiment.

[0022] This invention features a simple user interface, high integration, and low cost, and is a novel experimental platform for simulating solar wind irradiation of chips. Attached Figure Description

[0023] Figure 1This is a schematic diagram of the structure of the present invention.

[0024] Figure 2 This is the control logic diagram of the present invention.

[0025] The components include: 1. Mechanical pump; 2. Molecular pump; 3-1, 3-2 and 3-3 quick-connect tees; 4. Manual sealing valve; 5. Vacuum gauge tube; 6. Power supply system; 7. Ignition tube; 8. Inner electrode; 9. Outer electrode; 10. Polytetrafluoroethylene material; 11. Solenoid coil; 12. Straight column copper tube structure; 13. Cooling water circuit; 14. Thermal grease; 15. Silicone sealant; 16. High-speed pulse intake valve; 17. Probe interface; 18. Outer diameter; 19. Inner diameter; 20. Upward-sloping window; 21-1, 21-2 screws; 22. Aviation socket; 23. Sample chip; 24. Protective cover; 25. Fixing slot; 26. Fixing screw; 27. Stage; 28. Three-dimensional electric guide rail; 29. ​​Chip failure analysis real-time monitoring system. Detailed Implementation

[0026] The present invention will now be described in further detail with reference to the accompanying drawings:

[0027] like Figure 1 As shown, the present invention discloses a plasma irradiation platform for simulating solar wind bombardment of aerospace-grade chips, the platform comprising:

[0028] The plasma source host system includes a solenoid coil 11, a water-cooled structure, an inner electrode 8, and an outer electrode 9. The inner electrode is located in the cavity formed by the outer electrode, and the ports of the inner electrode and the outer electrode form a muzzle structure for emitting plasma.

[0029] Power supply system 6 is configured to generate multi-pulse high voltage and high current;

[0030] The timing controller includes two timing controllers with different time precisions: a low-time-precision controller and a high-time-precision controller, wherein the high-time-precision controller is configured to control the power supply switching timing.

[0031] A vacuum chamber and vacuum pump system, wherein the vacuum pump system includes a molecular pump 2 and a mechanical pump 1;

[0032] High-speed pulse intake valve 16 is used to rapidly inject working gas;

[0033] The stage 27 is configured to place the sample chip 23 on it, and the stage can be adjusted forward, backward, left, right and up and down by the three-dimensional electric guide rail 28, so as to realize different irradiation angles and distances of the sample chip 23; and the chip failure analysis real-time monitoring system 29 is configured to perform real-time monitoring and analysis of the failure of the irradiated sample chip.

[0034] In this embodiment, to meet the vacuum system requirements of the experiment, a vacuum pump system consisting of a mechanical pump 1 and a molecular pump 2 is connected below the plasma source main system. The two vacuum pump systems are connected by quick-connect tees 3-1, 3-2, and 3-3. The pipes are vacuum-cut off using a manual sealing valve 4. The vacuum pumping pipe is connected to the main vacuum system by sealing welding. The quick-connect tees 3-1 are connected to an external vacuum gauge 5 to monitor the vacuum level of the main system in real time. The power supply system 6 is a pulse power supply system, which uses an ignition tube 7 as a high-current, rapid-on power source. A circuit breaker is used; 16 cables are connected in parallel from the power system port to reduce the circuit resistance. These 16 cables supply power to the inner electrode 8 and the outer electrode 9. The inner and outer electrodes are insulated and vacuum-sealed using polytetrafluoroethylene (PTFE) material 10. A set of solenoid coils 11 is installed inside the inner electrode 8 to provide a poloidal magnetic field structure for the plasma. The inner shell of the solenoid coil uses a straight-cylinder copper tube structure 12, and deionized water is circulated inside to form a cooling water circuit 13. Thermally conductive silicone grease 14 connects the solenoid coil 11. The outer electrode 9 is insulated from the inner electrode 8 using silicone sealant 15. Eight sets of high-speed pulse air intake valves 16 are uniformly and circumferentially sealed and welded to the outer electrode 9. Four sets of probe interfaces 17 are uniformly and circumferentially sealed and welded to the outer electrode 9. Both the outer diameter 18 and inner diameter 19 of the muzzle are tapered, with the outer diameter 18 enlarged by a ratio of 1:1.4 and the inner diameter 19 reduced by a ratio of 1:0.8. The upward-sloping window 20 serves as a high-speed camera diagnostic window and is connected to the platform housing via a sealed weld. The stage 27 is mounted on a three-dimensional electric guide rail 28, with screws 21-1 and 21-2 connecting the bottom of the three-dimensional electric guide rail to the platform. The platform is connected to an aviation socket 22 at its tail end to provide power and signal transmission to the three-dimensional electric guide rail 28. The sample chip 23 is surrounded by a 1cm thick titanium protective cover 24 to simulate the outer shell of a spacecraft. The sample chip 23 and the protective cover 24 are inserted into the fixing slot 25 on the stage 27 and fixed to the stage 27 by fixing screws 26. The three-dimensional electric guide rail 28 can move forward, backward, left, right and up. The signal of the sample chip 23 is connected to the chip failure analysis real-time monitoring system 29 after passing through the aviation socket 22 for real-time chip failure monitoring.

[0035] like Figure 2The diagram shows the system control logic. The central control computer issues control commands, including the number of discharge pulses, discharge pulse frequency, and stage position information. After receiving the information, the power system starts charging and displays the charging status. The power system includes a solenoid power supply, a valve power supply, and an acceleration field power supply. Each power system has two controllers: one is a low-time-accuracy timing controller (time accuracy at least less than 0.1s) mainly used for charging triggering, and the other is a high-time-accuracy timing controller (time accuracy at least less than 0.1us) mainly used for triggering discharge. All power system status feedback includes charging complete, charging fault, emergency stop, and discharge status. All power system charging complete status signals are ANDed and returned to the charging indicator. Emergency stop and charging fault signals are ANDed and further ANDed with the charging complete status, and finally returned to the high-time-accuracy timing controller to control and trigger discharge. Emergency stop and charging fault signals are ANDed and then NOTed, and finally fed back to the emergency stop output signal for emergency stop control of all systems.

[0036] After the solenoid power supply, gas valve power supply, and accelerating field power supply complete charging, they enter a waiting-for-discharge command phase. Among these three power systems, the solenoid power supply is activated first. The entire solenoid current oscillation period is on the order of milliseconds. Once the solenoid current reaches its peak value, the gas valve power supply is activated. To meet the short-pulse gas intake requirement, the activation time of the gas valve power supply is controlled within a few hundred microseconds. After waiting for another few hundred microseconds to allow the working gas to mix uniformly, the accelerating field power supply is activated. The current ramp-up rate in the accelerating field is controlled within a timescale of >10 kA / µs to meet the requirements of rapid ionization and plasma acceleration. The working gas is subjected to high-voltage breakdown to form plasma. During this process, the magnetic field structure generated by its own current reconnects with the magnetic field structure permeating the vacuum chamber, further confining the plasma cluster. Subsequently, a powerful electromagnetic force provides a strong acceleration force to the plasma cluster, propelling it to a very high emission velocity. Finally, it is collimated by the Laval nozzle structure and bombards the surface of the test sample chip. During irradiation, a monitoring system is used to monitor in real time for possible chip data reversals and errors.

[0037] The above description and specific embodiments do not constitute any limitation on the present invention, nor is the present invention limited to the specific embodiments disclosed and described above. Any changes, modifications, additions or substitutions made within the scope of the main body of the present invention are also within the protection scope of the present invention.

Claims

1. A plasma irradiation platform that simulates solar wind bombardment of space-grade chips, characterized in that, The platform comprises: a plasma source host system, including a solenoid coil, a water-cooled structure, an inner electrode, and an outer electrode, the inner electrode is arranged in the inner cavity formed by the outer electrode, and the inner electrode and the outer electrode form a gun structure at the port for emitting plasma, the gun structure adopts a Laval nozzle structure, and the inner electrode is retracted and the outer electrode is expanded at the gun structure; a power supply system configured to generate high voltage and large current in multiple pulses; a time sequence controller, including two time accuracy time sequence controllers, one is a low time accuracy controller, and the other is a high time accuracy controller, wherein the high time accuracy controller is configured to control the power supply breaking time sequence; a vacuum chamber and a vacuum pump set, the vacuum pump set includes a molecular pump and a mechanical pump; a high-speed pulse gas inlet valve for rapidly injecting working gas; a sample stage arranged above the three-dimensional motorized guide rail at the tail of the platform, and arranged opposite to the axis of the inner electrode and the outer electrode, the sample stage is configured to place a sample chip to be irradiated thereon, and through the movement of the three-dimensional motorized guide rail, the sample chip to be irradiated can receive different irradiation angles and irradiation distances; a chip failure analysis real-time monitoring system configured to monitor and analyze the failure of the sample chip to be irradiated in real time; the inner electrode and the outer electrode and the solenoid coil in the plasma source host system all adopt a cylindrical structure and maintain a coaxial structure in space; the solenoid coil and the water-cooled structure are connected by heat-conducting silicone grease to play a heat dissipation function; the solenoid coil and the inner electrode are connected by organic silicone sealant to play an insulation function; the inner electrode and the outer electrode are connected by polytetrafluoroethylene material to play an insulation and closed vacuum function; the solenoid coil is arranged in the inner electrode; the solenoid coil is energized to provide a poloidal magnetic field for the plasma generated in the plasma source host system; the plasma is emitted to the sample chip to be irradiated on the sample stage through the gun structure.

2. The plasma irradiation platform for simulating solar wind bombardment of space-grade chips according to claim 1, wherein: the high voltage is 1-30 kV, and the large current is 100-800 kA.

3. The plasma irradiation platform for simulating solar wind bombardment of space-grade chips according to claim 1, wherein: the plasma source host system adopts multi-pulse discharge, the repetition frequency is adjustable at 1-50 Hz, and the total number of repeated pulses is greater than 100.

4. The plasma irradiation platform for simulating solar wind bombardment of space-grade chips according to claim 1, wherein: the power supply system adopts negative high-voltage discharge, the outer electrode of the platform is grounded, and single-point grounding is ensured.

5. The plasma irradiation platform for simulating solar wind bombardment of space-grade chips according to claim 1, wherein: the stepping accuracy of the three-dimensional motorized guide rail is less than 1 mm, and the forward-backward, left-right, and up-down directions can be adjusted.

6. The plasma irradiation platform for simulating solar wind bombardment of space-grade chips according to claim 1, wherein: The fixed clamping groove is arranged on the carrier platform and used for placing the irradiated sample chip.

7. The plasma irradiation platform for simulating solar wind bombardment of space-grade chips according to claim 1, characterized in that: Eight high-speed pulse inlet valves are evenly distributed on the outer electrode in a ring shape, and the angle difference between every two inlet valves is 45 degrees.

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