Electrostatic ring, test circuit, display panel and display device

Abstract

The present application provides an electrostatic ring, a test circuit, a display panel, and a display device. The electrostatic ring includes: a first conductive structure located on a first side of a first pad and a first conductive structure located on a second side of the first pad; a first end of the first conductive structure is electrically connected to the first pad; a second end of the first conductive structure located on the second side of the first pad and a second end of the first conductive structure located on the first side of the second pad are opposite and non-contacting; and the first pad and the second pad are adjacent. The technical solution of the present application can avoid micro-short circuits caused by low resistance between the two pads, and has strong ESD resistance.

Description

Technical Field

[0001] The present application relates to display technology, and in particular to an electrostatic ring, a test circuit, a display panel, and a display device. Background Art

[0002] In the field of display panels, a test circuit related to Cell Test (screen dot test / lighting test) is usually designed. This circuit can test defects in the display panel. Multiple binding pads inside the display panel or multiple lighting test pads (Cell Test pad, CT pad) in the test circuit are connected through an electrostatic ring to release static electricity in the internal circuit of the display panel or the test circuit.

[0003] However, existing electrostatic loops are unstable, prone to short circuits, and have poor ESD (Electro-Static Discharge) protection capabilities, resulting in excessive power consumption and current in the display panel and test circuit during lighting tests. Summary of the Invention

[0004] The embodiments of the present application provide an electrostatic ring, a test circuit, a display panel, and a display device to solve the problems existing in the related art. The technical solutions are as follows:

[0005] In a first aspect, an embodiment of the present application provides an electrostatic ring, comprising: a first conductive structure located on a first side of a first pad and a first conductive structure located on a second side of the first pad;

[0006] The first end of the first conductive structure is electrically connected to the first pad;

[0007] The second end of the first conductive structure located on the second side of the first pad is opposite to the second end of the first conductive structure located on the first side of the second pad and does not contact; the first pad and the second pad are adjacent.

[0008] In a second aspect, an embodiment of the present application provides a test circuit, comprising: a test pad, and the electrostatic ring provided in any embodiment of the present application.

[0009] In a third aspect, an embodiment of the present application provides a display panel, comprising: a binding pad located in a binding area, and the electrostatic ring provided by any embodiment of the present application.

[0010] In a fourth aspect, an embodiment of the present application provides a display device, comprising: a display panel, and a test circuit for testing the display panel;

[0011] At least one of the display panel and the test circuit includes the electrostatic ring provided by any embodiment of the present application.

[0012] The advantages or beneficial effects of the above technical solution include at least:

[0013] The electrostatic ring provided in the embodiment of the present application adopts a first conductive structure to replace the existing transistor structure, which can keep the resistance between the pads corresponding to different signals stable, avoiding the micro short circuit phenomenon caused by the small resistance between the two pads. When static electricity is generated between the pads, the first conductive structure can release the static electricity in time and has a strong anti-ESD ability.

[0014] The above summary is for illustrative purposes only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments and features described above, further aspects, embodiments and features of the present application will be readily apparent by reference to the accompanying drawings and the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar components or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in this application and should not be construed as limiting the scope of this application.

[0016] Figure 1 Schematic diagram of the structure of an electrostatic ring in the related art;

[0017] Figure 2 A schematic diagram of the characteristics of a transistor in an electrostatic ring in the related art;

[0018] Figure 3 A schematic diagram of the resistance between pads under normal conditions in the related art;

[0019] Figure 4 A schematic diagram of the resistance between pads under abnormal conditions in the related art;

[0020] Figure 5 This is a microscopic schematic diagram of the overlap of a test signal line and a jumper wire in a display panel product in the related art;

[0021] Figure 6 A microscopic schematic diagram of the overlap of a test signal line and a jumper wire in another display panel product in the related art;

[0022] Figure 7 A microscopic diagram illustrating the phase position relationship between gate signal lines and peripheral common electrodes of a display panel product in the related art;

[0023] Figure 8 A microscopic schematic diagram illustrating the relative positional relationship between a gate signal line and a peripheral common electrode of another display panel product in the related art;

[0024] Figure 9 for Figure 7 Schematic diagram of the dotted box portion in the microscopic schematic shown;

[0025] Figure 10 A schematic structural diagram of the first electrostatic ring provided in an embodiment of the present application;

[0026] Figure 11 A schematic structural diagram of the second electrostatic ring provided in an embodiment of the present application;

[0027] Figure 12 A schematic structural diagram of the third electrostatic ring provided in an embodiment of the present application;

[0028] Figure 13 for Figure 11 and Figure 12 A-A' cross-section diagram;

[0029] Figure 14 A schematic structural diagram of the fourth electrostatic ring provided in an embodiment of the present application;

[0030] Figure 15 A schematic structural diagram of the fifth electrostatic ring provided in an embodiment of the present application;

[0031] Figure 16 A schematic structural diagram of the sixth electrostatic ring provided in an embodiment of the present application;

[0032] Figure 17 A schematic structural diagram of an eighth electrostatic ring provided in an embodiment of the present application;

[0033] Figure 18 A schematic structural diagram of a ninth electrostatic ring provided in an embodiment of the present application;

[0034] Figure 19 A schematic structural diagram of the tenth electrostatic ring provided in an embodiment of the present application;

[0035] Figure 20 A schematic structural diagram of the eleventh electrostatic ring provided in an embodiment of the present application;

[0036] Figure 21 A schematic structural diagram of a twelfth electrostatic ring provided in an embodiment of the present application;

[0037] Figure 22 This is a schematic structural diagram of the thirteenth electrostatic ring provided in an embodiment of the present application. DETAILED DESCRIPTION

[0038] Hereinafter, only certain exemplary embodiments are briefly described. As will be appreciated by those skilled in the art, the described embodiments may be modified in various ways without departing from the spirit or scope of the present application. Therefore, the drawings and description are to be regarded as illustrative in nature and not restrictive.

[0039] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs. It should also be understood that terms such as those defined in common dictionaries should be understood to have meanings consistent with their meanings in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless specifically defined as herein.

[0040] The inventors of this application discovered during their research that, in related technologies, during the lighting test phase, the display panel cannot be directly lit because a polarizer has not yet been attached to it and an IC (Integrated Circuit) and FPC (Flexible Printed Circuit Board) have not yet been bonded. To light up the display panel, multiple test signal lines are typically connected to a lighting test pad. When a suitable electrical signal is applied to the lighting test pad via an external probe, the display panel can be lit in conjunction with an external polarizer to detect defects in the display panel.

[0041] like Figure 1 As shown, the test pads corresponding to different test signals are usually connected through an ESD ring. When a large static electricity is generated in the test signal line connected to the test pad, a large electrostatic current will pass through the test pad, and the electrostatic current can be introduced into the common electrode through the electrostatic ring.

[0042] Existing electrostatic rings usually include multiple IGZO (Indium Gallium Zinc Oxide) TFTs (Thin Film Transistors). The characteristics of IGZO TFTs depend on the I (current)-V (voltage) characteristics. Figure 2 The I (current)-V (voltage) characteristic curves of the IGZO TFT are shown, wherein curve 1 is a curve showing normal IV characteristics of the IGZO TFT, and curve 2 is a curve showing abnormal (NG) IV characteristics of the IGZO TFT. The horizontal axis is the voltage value, with the unit being V (volt), and the vertical axis is the current value, with the unit being A (ampere).

[0043] In the related art, due to the difference between the film pattern at the location of the electrostatic ring and the film pattern in the display panel, the IV characteristics of the IGZO TFT are unstable, which is prone to the following problems: Figure 1The abnormal situation shown by the middle curve 2 causes the electrostatic ring to become conductor-like. This phenomenon is more likely to occur when the overall Vth (threshold voltage) of the IGZO TFT is relatively small. This phenomenon will reduce the resistance of the electrostatic ring, that is, the resistance between the two test pads is relatively small, resulting in a micro-short circuit. The electrostatic voltage on the electrostatic ring is relatively large. When the electrostatic voltage is greater than or equal to the minimum voltage of 8kV (kilovolts) for the electrostatic ring to prevent ESD (Electro-Static Discharge), the electrostatic ring will be burned and fail. Then, during the lighting test, the static electricity of the display panel cannot be released, the power consumption and current exceed the standard, and the TP (touch) test will also be abnormal and pitting will appear. When the electrostatic voltage is less than 8kV, the electrostatic ring is not affected and is not damaged.

[0044] Under normal circumstances, the electrostatic loop is open and the resistance between the two test pads is at the MΩ (megaohm) level. Under abnormal circumstances, that is, when the electrostatic loop fails, the resistance between the two test pads drops to the KΩ (kiloohm) level, usually tens to hundreds of kiloohms. After cutting off the failed electrostatic loop, the resistance can be restored to the MΩ level. Figure 3 and Figure 4 The resistance between the test pads under normal conditions and the resistance between the test pads under abnormal conditions are shown respectively, both in KΩ.

[0045] Figure 3 and Figure 4 They all involve test pads corresponding to the following test signals: three frame start signals, namely STV1, STV2 and STV0; two power supply signals, namely VDDO and VDDE; eight clock signals, namely CLK1, CLK2, CLK3, CLK4, CLK5, CLK6, CLK7 and CLK8; and low-level signal LVGL.

[0046] exist Figure 3 In the example, under normal circumstances, except for the resistance between the test pad corresponding to the LVGL signal and the test pad corresponding to other signals, which is smaller (450KΩ), the resistance between the test pads corresponding to other test signals is 1600KΩ, that is, 1.6MΩ. Figure 4 In the example shown in FIG, under abnormal conditions, the resistance between the test pads corresponding to each test signal is small, less than 520 KΩ.

[0047] In the related art, the minimum voltage of the electrostatic ring to prevent ESD is 8kV. However, when the test signal line extends to the GOA (GateDriver On Array, array substrate row driver) area, it will overlap with the jumper wires of other test signal lines. The minimum voltage for ESD short circuit between the overlapping test signal line and the jumper wire is 900V. The electrostatic ring cannot effectively prevent ESD between the test signal line and the jumper wire. Figure 5 and Figure 6 , the signal line (vertical line) on the DP side (data binding side) of the display panel will also overlap with the jumper line (horizontal line) when it extends to the GOA area and cause ESD problems, such as Figure 5 and Figure 6 As shown in the dotted box.

[0048] In addition, in the related art, ESD also occurs between the end of the gate signal line (Gate Line) of the IGZO TFT and the peripheral common electrode (Com) line, such as Figures 7 to 9 In the existing IGZO TFT preparation process, by changing the mask plate, referring to Figure 9 , the distance between the end of the gate signal line and the peripheral common electrode is a, Figure 9 The dotted line in the figure represents the source-drain signal line (SD Line). In the existing IGZO TFT fabrication process, the value of a can be changed by changing the array mask. Referring to the table below, before the array mask change, a was 24 μm (micrometers), and the minimum voltage for ESD was 650 V (volts). After the array mask change, a was 45 μm, and the minimum voltage for ESD was 900-1000 V. In other words, the smaller a, the more likely ESD will occur.

[0049] a Minimum voltage for ESD to occur Before change 24μm 650V After the change 45μm 900～1000V

[0050] The following describes in detail the technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems with specific embodiments.

[0051] The embodiment of the present application provides an electrostatic ring, such as Figure 10 As shown, the electrostatic ring includes: a first conductive structure 100 located on a first side of the first pad 200 and a first conductive structure 100 located on a second side of the first pad 200 .

[0052] The first end of the first conductive structure 100 is electrically connected to the first pad 200; the second end of the first conductive structure 100 located on the second side of the first pad 200 is opposite to the second end of the first conductive structure 100 located on the first side of the second pad and does not contact; the first pad 200 and the second pad are adjacent.

[0053] There can be multiple pads, each pad is electrically connected to a signal line, each pad can be used as a first pad relative to the next adjacent pad, and each pad can be used as a second pad relative to the previous adjacent pad. Figure 10 Five pads and five signal lines are shown as an example, and the five signal lines are respectively a VDDE signal line, a TRST signal line, a CLK1 signal line, a CLK2 signal line, and a CLK3 signal line. Figure 10Each pad in can serve as the first pad 200 or the second pad.

[0054] The first pad 200 in the embodiment of the present application can be a test pad in a test circuit for performing a lighting test, or a bonding pad in a bonding area of ​​a display panel, wherein the bonding area can be an area on the DP side (data bonding side) or the DPO side (data bonding opposite side). Accordingly, the electrostatic ring provided in the embodiment of the present application can be applied to a test circuit or a display panel.

[0055] Reference Figure 10 In the example, the first side of the first solder pad 200 can be the left side of the first solder pad 200, and the second side of the first solder pad 200 can be the right side of the first solder pad 200, or the first side of the first solder pad 200 can be the right side of the first solder pad 200, and the second side of the first solder pad 200 can be the left side of the first solder pad 200.

[0056] The shape of the first pad 200 may be as follows Figure 10 The first side and the second side are two opposite sides of the rectangle shown in FIG. Figure 10 The upper and lower sides shown can be connected to signal lines, such as test signal lines and data lines. The shape of the first pad 200 can also be other shapes, such as trapezoidal, diamond, etc., and the first side and the second side may not be opposite.

[0057] Reference Figure 10 Taking the pad corresponding to the VDDE signal as the first pad 200 and the pad corresponding to the TRST signal as the second pad as an example, the left end (as the first end) of the first conductive structure 100 on the right side (as the second side) of the first pad 200 is electrically connected to the first pad 200, and the right end (as the second end) of the first conductive structure 100 is arranged opposite to the left end (as the second end) of the first conductive structure 100 on the left side of the second pad 200 and does not touch. When static electricity passes through the first pad 200 corresponding to the VDDE signal and the second pad corresponding to the TRST signal, the static electricity can be released through the end (i.e., the second end) of the first conductive structure 100 connected to the two pads 200. Figure 10 The principle of electrostatic discharge for other pads is similar to that of the first two pads and will not be described in detail.

[0058] Reference Figure 10 The right end of the first conductive structure 100 on the right side (as the second side) of the first pad 200 corresponding to the VDDE signal and the left end (as the second end) of the first conductive structure 100 on the left side of the second pad corresponding to the adjacent TRST signal are arranged opposite to each other, and can be arranged oppositely or not.

[0059] In the embodiment of the present application, the second ends of the two first conductive structures 100 are arranged relative to each other, which means that the projections of the cross sections of the second ends of the two first conductive structures 100 in the specified direction on the specified plane overlap; the second ends of the two first conductive structures 100 are arranged facing each other, which means that the projections of the cross sections of the second ends of the two first conductive structures 100 in the specified direction on the specified plane completely overlap; the second ends of the two first conductive structures 100 are not arranged facing each other, which means that the projections of the cross sections of the second ends of the two first conductive structures 100 in the specified direction on the specified plane partially overlap. The larger the overlapping area, the better the effect of releasing static electricity. Figure 10 For example, the specified direction can be Figure 10 In the Y direction, the specified plane can be Figure 10 The plane in the Y direction.

[0060] In the embodiment of the present application, in a direction parallel to the first side of the first pad 200, the size of the first conductive structure 100 is smaller than the size of the first pad 200. Figure 10 For example, the size of the first conductive structure 100 in the Y direction is smaller than the size of the connected pad in the Y direction, so that smaller ends can be formed on both sides of the pad, which is conducive to releasing static electricity between the pads.

[0061] The electrostatic ring provided in the embodiment of the present application uses a first conductive structure 100 to replace the existing transistor structure, which can maintain a stable resistance between the pads corresponding to different signals and avoid micro-short circuits caused by low resistance between the two pads. When static electricity is generated between the pads, the first conductive structure 100 can release the static electricity in a timely manner, effectively preventing short circuits between the pads. When the signal line extends to the GOA area and overlaps with the jumper wires of other signal lines and static electricity is generated in the overlapping area, the first conductive structure 100 can release the static electricity in the overlapping area in a timely manner, effectively preventing short circuits caused by ESD in the overlapping area.

[0062] Optionally, the distance between the second end of the first conductive structure 100 located on the second side of the first pad 200 and the second end of the first conductive structure 100 located on the first side of the second pad is 10-40 μm (inclusive).

[0063] Reference Figure 10For example, the distance between the right end of the first conductive structure 100 on the right side (serving as the second side) of the first pad 200 corresponding to the VDDE signal and the left end of the first conductive structure 100 on the left side of the second pad corresponding to the TRST signal is b. If the value of b is too small, that is, the two first conductive structures 100 are too close to each other, a short circuit is likely to occur between the two first conductive structures 100. If the value of b is too large, that is, the two first conductive structures 100 are too far away from each other, the ends of the two first conductive structures 100 are not weak points relative to other positions in the path, and static electricity cannot be released at the ends of the two first conductive structures 100. If b takes an appropriate value, such as 10 to 40 μm (inclusive), static electricity can be effectively released at the ends of the two first conductive structures 100.

[0064] In an optional embodiment, as Figure 11 and Figure 12 As shown, the electrostatic ring provided in the embodiment of the present application may further include: a second conductive structure 300 located on at least one of the first side and the second side of the first pad 200. Both ends of the second conductive structure 300 are electrically connected to the first pad 200; the middle portion of the second conductive structure 300 overlaps with the first conductive structure 100 on the same side.

[0065] In one example, if Figure 11 As shown, the second conductive structure 300 can be located on the left side of the first pad 200. In this case, the left side of the first pad 200 is connected to both the first conductive structure 100 and the second conductive structure 300, and the right side of the first pad 200 is only connected to the first conductive structure 100. In another example, the second conductive structure 300 can also be located on the right side of the first pad 200 (not shown in the figure). In this case, the right side of the first pad 200 is connected to both the first conductive structure 100 and the second conductive structure 300, and the left side of the first pad 200 is only connected to the first conductive structure 100. In yet another example, as shown in FIG. Figure 12 As shown, the second conductive structure 300 may be located on the left and right sides of the first pad 200 . In this case, both the left and right sides of the first pad 200 are connected to the first conductive structure 100 and the second conductive structure 300 .

[0066] Reference Figure 11 and Figure 12 For example, the second conductive structure 300 may be U-shaped, both ends of the second conductive structure 300 are connected to the first pad 200, and the middle portion of the second conductive structure 300 (i.e., the portion between the two ends) overlaps with the first conductive structure 100. The overlapping area between the middle portion of the second conductive structure 300 and the first conductive structure 100 is as shown in FIG. Figure 11 As shown in the dotted box, Figure 13 Shown Figure 11 and Figure 12In the cross-sectional view along the AA' direction, further, the overlapping area between the middle portion of the second conductive structure 300 and the first conductive structure 100 is as shown in FIG. Figure 13 As shown in the dotted box in FIG, the overlapping area can also release the static electricity between the pads 200, so as to Figures 11 to 13 The solution in which the first conductive structure 100 and the second conductive structure 300 have an overlapping area can further increase the static electricity release area, thereby releasing static electricity more quickly, compared to the solution with only the first conductive structure 100 .

[0067] For N (positive integer) first pads 200 provided with the first conductive structure 100, as shown in FIG. Figure 11 The solution of setting the second conductive structure 300 on one side can at least increase N electrostatic discharge areas, such as Figure 12 The solution of setting the second conductive structure 300 on both sides can increase at least 2N electrostatic discharge areas. When the value of N is large, that is, the number of first pads 200 provided with the first conductive structure 100 is large, such as Figure 11 and Figure 12 The solution in which the first conductive structure 100 and the second conductive structure 300 have overlapping areas can increase a large number of electrostatic discharge areas and greatly improve the electrostatic discharge rate.

[0068] Optional, see Figure 13 In an example, a substrate is further provided under the first conductive structure 100, a first insulating layer is further provided between the first conductive structure 100 and the second conductive structure 300, and a second insulating layer and a third insulating layer are further provided above the second conductive structure 300. The substrate may be a glass substrate, the first insulating layer may be a gate insulating layer (GI), the second insulating layer may be an organic planar layer, and the third insulating layer may be a passivation layer (PVX), but the present invention is not limited thereto.

[0069] In the embodiment of the present application, in a direction parallel to the first side of the first pad 200, the sum of the size of the second conductive structure 300 and the size of the first conductive structure 100 is smaller than the size of the first pad 200. Figure 11 For example, the size of the second conductive structure 300 in the Y direction (the sum of the Y direction sizes of the two ends of the second conductive structure 300) and the sum of the Y direction sizes of the first conductive structure 100 are smaller than the Y direction size of the first pad 200, so that the second conductive structure 300 can cross the first conductive structure 100 and be connected to the first pad 200.

[0070] The shape of the second conductive structure 300 in the embodiment of the present application can also be other shapes besides U-shape, such as C-shape, E-shape, etc., which is not limited in the present application. It only needs to achieve connection with the pad and overlap with the first conductive structure 100.

[0071] In an optional embodiment, on the first side or the second side of the first pad 200, the first conductive structure 100 may be a linear (or I-shaped) structure, and in the extension direction of the first conductive structure 100, the first distance is greater than or equal to the second distance; the first distance is the distance between the second end of the first conductive structure 100 and the first pad 200, and the second distance is the distance between the edge of the middle part of the second conductive structure 300 and the first pad 200.

[0072] Reference Figure 12 In the example of FIG. 1 , the first conductive structure 100 is a straight line extending along the X direction. In the X direction, Figure 12 The distance between the left end (as the second end) of the first first conductive structure 100 and the first pad 200 is greater than the distance between the edge of the middle portion of the first second conductive structure 300 and the first pad 200. That is, for a set of overlapping first conductive structures 100 and second conductive structures 300, the second end of the first conductive structure 100 exceeds the edge of the middle portion of the second conductive structure 300. The distance of the excess can be determined by Figure 12 or Figure 13 The c in it means, Figure 12 The distance relationship between the other first conductive structures 100 and the second conductive structures 300 is the same as that of the first first conductive structure 100 .

[0073] Optionally, the first conductive structure 100 may be a linear structure, and in the extension direction of the first conductive structure 100 , the absolute value of the difference between the first distance and the second distance is less than or equal to 5 μm.

[0074] Reference Figure 12 and Figure 13 In an example, the difference between the first distance and the second distance is a distance c. When the distance c is too large, that is, the portion of the second end of the first conductive structure 100 that extends beyond the edge of the middle portion of the second conductive structure 300 is too large, the discharge effect of the tip of the second end of the first conductive structure 100 is dominant, and the discharge effect of the overlapping region of the first conductive structure 100 and the second conductive structure 300 is weak. The overlapping region may not serve as an effective electrostatic discharge channel. When the distance c takes an appropriate value, such as a value less than or equal to 5 μm, the discharge effect of the overlapping region of the first conductive structure 100 and the second conductive structure 300 can be improved, and the overlapping region can serve as an effective electrostatic discharge channel.

[0075] Reference Figure 14 For example, for a set of overlapping first conductive structures 100 and second conductive structures 300, when the distance c is 0, the second end of the first conductive structure 100 is flush with the edge of the middle portion of the second conductive structure 300. Figure 14The distance relationship between the other first conductive structures 100 and the second conductive structures 300 is the same as that of the first first conductive structure 100. Figure 14 In the example shown, relative to the edge of the middle portion of the second conductive structure 300 , the second end of the first conductive structure 100 coincides with the overlapping region. At this time, static electricity between the pads is mainly released by the overlapping region.

[0076] The embodiment of the present application does not limit the relative position relationship between the conductive structure and the pad. Compared with the first conductive structure 100, it can be as follows Figures 10 to 12 As shown, it is connected to the middle position of the first pad 200 in the Y direction, or it can be connected to the middle position of the first pad 200 in the Y direction. Figure 15 As shown, it is connected to the upper middle position of the first pad 200 in the Y direction, and can also be connected to the lower middle position of the first pad 200 in the Y direction (not shown in the figure). Figures 10 to 12 、 Figure 15 As shown, the first pad 200 may be connected to positions above and below the first conductive structure 100 connection position on the first pad 200 .

[0077] The embodiment of the present application does not limit the relative position relationship between the first conductive structure 100 and the second conductive structure 300. Figures 10 to 12 、 Figure 15 As shown, the second conductive structure 300 is symmetrically arranged with the first conductive structure 100 as the symmetry axis, and can also be as shown in FIG. Figure 16 As shown, the second conductive structure 300 is not symmetrically arranged with respect to the symmetry axis of the first conductive structure 100 , as long as the second conductive structure 300 can cross the first conductive structure 100 to form an overlapping region.

[0078] Optionally, on the first side or the second side of the first pad 200 , the number of the first conductive structures 100 may be at least two, and the second conductive structure 300 may overlap with at least one of the first conductive structures 100 .

[0079] Figures 17 to 19 The first side and the second side of the first pad 200 are both provided with two first conductive structures 100. Figure 17 In the example, the second conductive structure 300 overlaps only one of the two first conductive structures 100. Figure 18 and Figure 19 In the example, the second conductive structure 300 and the two first conductive structures 100 have overlapping areas.

[0080] Figures 17 to 19 The solution of two first conductive structures 100 on a single side is only an example. In actual applications, more first conductive structures 100 can be provided on a single side.

[0081] In an optional embodiment, on the first side or the second side of the first pad 200 , there is one second conductive structure 300 , and the second conductive structure 300 has an overlapping region with at least one first conductive structure 100 .

[0082] exist Figure 17 In the example, there is a second conductive structure 300 on each of the first side and the second side of the first pad 200, and the second conductive structure 300 overlaps with the first conductive structure 100 on the side. Figure 19 In the example of FIG. 1 , there is a second conductive structure 300 on each of the first side and the second side of the first pad 200. The second conductive structure 300 has an overlapping area with the two first conductive structures 100. Figure 19 As shown, the middle portion of the second conductive structure 300 spans two first conductive structures 100 at the same time, so that when the number of second conductive structures 300 is fixed, more electrostatic discharge areas are set by increasing the number of overlapping first conductive structures 100. Figure 19 The case where one second conductive structure 300 spans two first conductive structures 100 is only an example. When there are more first conductive structures 100 on a single side, one second conductive structure 300 can span three, four or more first conductive structures 100, thereby providing more electrostatic release areas.

[0083] In another optional embodiment, on the first side or the second side of the first pad 200, the number of the second conductive structures 300 is at least two, and each second conductive structure 300 has an overlapping region with at least one first conductive structure 100, or each first conductive structure 100 has an overlapping region with at least one second conductive structure 300.

[0084] Reference Figure 18 In the example of FIG, two first conductive structures 100 and two second conductive structures 300 are connected to a single side (left or right) of the same pad, and each second conductive structure 300 has an overlapping area with a first conductive structure 100. Figure 20 In the example of FIG, four first conductive structures 100 and two second conductive structures 300 are connected to one side of the same pad, and each second conductive structure 300 has an overlapping region with two first conductive structures 100 .

[0085] Optionally, on the first side or the second side of the first pad 200 , the number of the second conductive structures 300 may be at least two, and the first conductive structure 100 and at least one second conductive structure 300 may have an overlapping region.

[0086] Still refer to Figure 19In the example of FIG, two first conductive structures 100 and two second conductive structures 300 are connected to one side of the same pad, and each first conductive structure 100 has an overlapping area with one second conductive structure 300. Figure 21 , a first conductive structure 100 and two second conductive structures 300 are connected to one side of the same pad, and there is an overlapping area between the first conductive structure 100 and the two second conductive structures 300, such as Figure 19 As shown, the middle parts of the two second conductive structures 300 span the same conductive structure to form two overlapping areas, so that when the number of first conductive structures 100 on a single side is fixed, more electrostatic release areas can be set by increasing the overlapping second conductive structures 300. Figure 21 The case where two second conductive structures 300 cross one first conductive structure 100 is only an example. In the case where there are more second conductive structures 300 on a single side, more second conductive structures 300 can cross the same first conductive structure 100, for example, three, four or more second conductive structures 300 can cross the same first conductive structure 100, thereby providing more electrostatic discharge areas. Figure 21 For simplicity, only two nested second conductive structures 300 are shown on both sides of the pad corresponding to the VDDE signal as an example. The second conductive structures 300 provided on both sides of other pads may be the same as the pad corresponding to the VDDE signal.

[0087] In an optional embodiment, as Figures 11 to 12 ,as well as Figures 14 to 21 As shown, the first pad 200 in the embodiment of the present application may include: a third conductive structure 201 and a fourth conductive structure 202 arranged in a stacked manner; the first conductive structure 100 and the third conductive structure 201 are both located in the first metal layer, and the second conductive structure 300 and the fourth conductive structure 202 are both located in the second metal layer; or, the first conductive structure 100 and the fourth conductive structure 202 are both located in the first metal layer, and the second conductive structure 300 and the third conductive structure 201 are both located in the second metal layer.

[0088] The first conductive structure 100 and the second conductive structure 300 serve as structures for releasing static electricity and are located in the same metal layer as the third conductive structure 201 and the fourth conductive structure 202 in the pad 200, respectively. This enables same-layer static electricity release, improves the ability to release static electricity, and is also beneficial for simplifying the preparation process. The first conductive structure 100 and the third conductive structure 201 can be formed simultaneously in a single process, and the second conductive structure 300 and the fourth conductive structure 202 can be formed simultaneously in a single process.

[0089] The pad in the embodiment of the present application adopts a double-layer structure of a first metal layer and a second metal layer, which can effectively reduce the contact resistance.

[0090] Optional, with Figure 13 Similar to the cross-sectional view shown, the first pad 200 in the embodiment of the present application may further include: a substrate located on the first metal layer away from the second metal layer, a first insulating layer located between the first metal layer and the second metal layer, a second insulating layer and a third insulating layer located on a side of the second metal layer away from the first metal layer. The substrate may be a glass substrate, the first insulating layer may be a gate insulating layer (GI), the second insulating layer may be an organic planar layer, and the third insulating layer may be a passivation layer (PVX), but is not limited thereto.

[0091] In another optional embodiment, the first conductive structure 100, the second conductive structure 300, the third conductive structure 201 and the fourth conductive structure 202 may be respectively located in different metal layers, and the metal layer where the first conductive structure 100 is located and the metal layer where the third conductive structure 201 is located, or the metal layer where the first conductive structure 100 is located and the metal layer where the fourth conductive structure 202 is located, may be connected through vias, and the metal layer where the second conductive structure 300 is located and the metal layer where the fourth conductive structure 202 is located, or the metal layer where the second conductive structure 300 is located and the metal layer where the third conductive structure 201 is located may be connected through vias.

[0092] Optionally, the first metal layer is a gate metal layer (Gate layer), and the second metal layer is a source-drain metal layer (SD layer); or, the first metal layer is a source-drain metal layer, and the second metal layer is a gate metal layer. Correspondingly, the first conductive structure 100 is a gate signal line, and the second conductive structure 300 is a source-drain signal line; or, the first conductive structure 100 is a source-drain signal line, and the second conductive structure 300 is a gate signal line.

[0093] Figures 11 to 12 ,as well as Figures 14 to 21 It shows a situation where the first conductive structure 100 and the third conductive structure 201 are located in the gate metal layer, and the second conductive structure 300 and the fourth conductive structure 202 are located in the source and drain metal layer. Figure 22 It shows a situation where the first conductive structure 100 and the fourth conductive structure 202 are located in the source / drain metal layer, and the second conductive structure 300 and the fourth conductive structure 202 are located in the gate metal layer.

[0094] Based on the same inventive concept, an embodiment of the present application further provides a test circuit, comprising: a test pad, and the electrostatic ring provided in any embodiment of the present application.

[0095] The first conductive structure and / or the second conductive structure in the electrostatic ring is connected to the test pad (serving as the first pad).

[0096] Based on the same inventive concept, an embodiment of the present application further provides a display panel, comprising: a binding pad located in a binding area, and the electrostatic ring provided in any embodiment of the present application.

[0097] The first conductive structure and / or the second conductive structure in the electrostatic ring is connected to the binding pad (serving as the first pad), and the binding area may be an area on the DP side or the DPO side.

[0098] The display panel provided in the embodiment of the present application can be an oxide display panel (the material of the transistor inside the panel is oxide) or an A-Si (amorphous silicon) display panel (the material of the transistor inside the panel is A-Si). The electrostatic ring provided in the embodiment of the present application can be applied to an oxide display panel or an A-Si display panel.

[0099] Based on the same inventive concept, an embodiment of the present application further provides a display device, comprising: a display panel, and a test circuit for testing the display panel;

[0100] At least one of the display panel and the test circuit includes the electrostatic ring of any embodiment of the present application, the display panel can be the display panel provided by the embodiment of the present application, and the test circuit can be the test circuit provided by the embodiment of the present application.

[0101] When testing the display panel, such as a lighting test, an electrostatic ring is provided in any circuit area of ​​the display panel and the test circuit, which can effectively release static electricity in the circuit during the test.

[0102] The display device provided in the embodiment of the present application may be a liquid crystal display device or an organic light emitting diode display device. For example, the display device may be any product or component with a display function, such as a liquid crystal display, an LCD TV, a digital photo frame, a mobile phone, or a tablet computer.

[0103] In the description of this specification, the reference terms "one embodiment," "some embodiments," "example," "specific example," or "some examples" mean that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. Moreover, the specific features, structures, materials, or characteristics described may be combined in any appropriate manner in any one or more embodiments or examples. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification, as well as features of different embodiments or examples, unless they are mutually inconsistent.

[0104] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. Throughout the description of this application, "plurality" means two or more, unless otherwise specifically defined.

[0105] It should be further understood that the term "comprising" as used in this specification refers to the features, integers, steps, operations, elements and / or components stated, but does not exclude the existence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof. The term "and / or" as used herein includes all or any unit and all combinations of one or more associated listed items.

[0106] The terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting the present application.

[0107] In this specification, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Furthermore, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0108] Should be understood that when we say an element is "connected" or "coupled" to another element, it can be directly connected or coupled to the other element, or intermediate elements may exist. In addition, "connected" or "coupled" used herein may include wireless connection or wireless coupling.

[0109] In this specification, "electrically connected" includes components connected together via an element having some electrical function. There are no particular limitations on the "element having some electrical function" as long as it enables the transfer of electrical signals between the connected components. Examples of "element having some electrical function" include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other components with various functions.

[0110] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any person skilled in the art can easily conceive of various modifications or substitutions within the technical scope disclosed in this application, and such modifications or substitutions should be included within the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

Claims

1. An electrostatic ring, characterized in that: include: a first conductive structure located on a first side of the first pad and a first conductive structure located on a second side of the first pad; The first end of the first conductive structure located on the first side of the first pad and the first conductive structure located on the second side of the first pad are both electrically connected to the first pad; The second end of the first conductive structure located on the second side of the first pad is opposite to the second end of the first conductive structure located on the first side of the second pad and does not contact each other; the first pad is adjacent to the second pad.

2. The electrostatic ring according to claim 1, characterized in that A distance between the second end of the first conductive structure located on the second side of the first pad and the second end of the first conductive structure located on the first side of the second pad is 10 to 40 micrometers.

3. The electrostatic ring according to any one of claims 1 or 2, characterized in that: Also includes: a second conductive structure located on at least one of the first side and the second side of the first pad; Two ends of the second conductive structure are electrically connected to the first pad; An overlapping region exists between a middle portion of the second conductive structure and the first conductive structure on the same side.

4. The electrostatic ring according to claim 3, characterized in that On the first side or the second side of the first pad, the first conductive structure is a linear structure, and in an extending direction of the first conductive structure, a first distance is greater than or equal to a second distance; The first distance is the distance between the second end of the first conductive structure and the first pad, and the second distance is the distance between the edge of the middle portion of the second conductive structure and the first pad.

5. The electrostatic ring according to claim 4, characterized in that: An absolute value of a difference between the first distance and the second distance is less than or equal to 5 micrometers.

6. The electrostatic ring according to claim 3, characterized in that: On the first side or the second side of the first pad, the number of the first conductive structures is at least two, and the second conductive structure has an overlapping area with at least one first conductive structure.

7. The electrostatic ring according to claim 6, characterized in that: On the first side or the second side of the first pad, the number of the second conductive structures is at least two, and each second conductive structure has an overlapping region with at least one first conductive structure.

8. The electrostatic ring according to claim 3, characterized in that: On the first side or the second side of the first pad, the number of the second conductive structures is at least two, and an overlapping area exists between the first conductive structure and at least one second conductive structure.

9. The electrostatic ring according to claim 3, characterized in that: The first pad includes: a third conductive structure and a fourth conductive structure stacked together; The first conductive structure and the third conductive structure on the first side and the second side of the first pad are both located in the first metal layer, and the second conductive structure and the fourth conductive structure are both located in the second metal layer; or, the first conductive structure and the fourth conductive structure are both located in the first metal layer, and the second conductive structure and the third conductive structure are both located in the second metal layer.

10. The electrostatic ring according to claim 9, characterized in that: The first metal layer is a gate metal layer, and the second metal layer is a source and drain metal layer; Alternatively, the first metal layer is a source / drain metal layer, and the second metal layer is a gate metal layer.

11. A test circuit, characterized in that: include: A test pad and an electrostatic ring as claimed in any one of claims 1 to 10.

12. A display panel, characterized in that: include: A bonding pad located in a bonding area, and an electrostatic ring according to any one of claims 1-10.

13. A display device, characterized in that: include: A display panel, and a test circuit for testing the display panel; At least one of the display panel and the test circuit includes the electrostatic ring according to any one of claims 1 to 10.

Images