Memory, method of programming memory, and memory system

By performing two verifications after applying the Nth programming pulse to the flash memory to determine whether the N+1th programming pulse is needed, the problems of long programming time and insufficient reliability are solved, and a more efficient programming process is achieved.

CN115019861BActive Publication Date: 2026-04-10YANGTZE MEMORY TECH CO LTD
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Patent Information

Application Number
CN202210729038.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-06-24
Publication Date
2026-04-10
Estimated Expiration
2042-06-24

AI Technical Summary

Technical Problem

In the existing technology, flash memory has a long programming time and insufficient reliability, especially when programming single-level and multi-level memory cells. Too many overprogramming and verification times lead to low programming efficiency.

Method used

The method employs a first sub-verification and an Nth second sub-verification after applying the Nth programming pulse. Based on the verification results, it is determined whether the (N+1)th programming pulse needs to be applied, thereby reducing unnecessary verification steps and ensuring that the memory cell threshold voltage reaches the target threshold voltage.

Benefits of technology

While ensuring programming quality, the number of programming verifications was reduced, programming time was shortened, and programming efficiency and reliability were improved.

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Abstract

The embodiments of the present disclosure disclose a memory and system, a programming method, the method comprising: applying an Nth pulse to a selected memory cell with a target state of an i-th state; after applying the Nth pulse, performing a first sub-verification and an Nth second sub-verification on the selected memory cell, obtaining a first sub-result and an Nth second sub-result; the first sub-result indicating whether the threshold voltage of the selected memory cell is less than a preset voltage, and the Nth second sub-result indicating whether the threshold voltage of the selected memory cell is less than a target threshold voltage of the i-th state; determining, according to the Nth second sub-result, a memory cell that needs to be applied with an N+1th pulse among the memory cells with the target state of the i-th state; the difference between the N+1th pulse and the Nth pulse being greater than or equal to the difference between the target threshold voltage and the preset voltage; applying the N+1th pulse to the memory cell that needs to be applied with the N+1th pulse; after applying the N+1th pulse, when the first sub-result indicates that the number of failed bits of the first sub-verification is less than a first preset value, determining that the programming of the i-th state is passed.
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