A method for manufacturing a display panel and a display panel

Abstract

The present invention discloses a method for manufacturing a display panel and a display panel. The method for manufacturing the display panel includes: providing a glass substrate, and sequentially forming a sacrificial layer, a flexible substrate, a thin-film transistor device layer, and a planarization layer on one side of the glass substrate; forming a plurality of light-emitting structures on the side of the planarization layer away from the glass substrate; each light-emitting structure is electrically connected to the source or drain in the corresponding thin-film transistor device through a first opening in the planarization layer; separating the flexible substrate and the sacrificial layer, and forming a lap hole exposing the front metal lap layer from the side of the flexible substrate away from the thin-film transistor device layer; the lap hole is used to connect an external driving chip and the thin-film transistor device; the problems that the via depth is difficult to control and the signal transmission line is easily broken are improved, and the manufacturing yield of the display panel is increased; the manufacturing process of the display panel is simplified and the cost is reduced.

Description

Technical Field

[0001] Embodiments of the present invention relate to the field of display technologies, and particularly to a method for manufacturing a display panel and a display panel. Background Art

[0002] Full-screen technology has gradually become the mainstream technology for handheld devices such as mobile phones. Currently, GOA (Gate Driver On Array) technology is used to narrow the left and right borders, and COF (Chip On Film) technology is used to narrow the lower border. However, whether it is GOA or COF, this technology of welding on the display screen border still cannot achieve seamless splicing.

[0003] Based on the above background, Figure 1 is a structure of a display panel formed based on the method for manufacturing a display panel of the prior art. Refer to Figure 1 , the current method for manufacturing a display panel includes first forming a sacrificial layer on one surface of a glass substrate in sequence, coating a layer of polyimide material on the sacrificial layer to form a flexible substrate 3; forming connection vias on the flexible substrate 3 by laser etching; forming a metal layer on the flexible substrate and forming a conductive layer pattern through a patterning process, and the conductive layer pattern has a conductive layer 2 corresponding to the connection vias; coating another layer of polyimide material to form a leveling layer 5 to cover the conductive layer pattern; then forming thin-film transistor devices corresponding one-to-one to the connection vias on the leveling layer 5; forming a planarization layer 14 of polyimide material on the side of the thin-film transistor devices facing away from the flexible substrate 3; forming a driving chip 16 on the side of the planarization layer 14 facing away from the flexible substrate 3 and electrically connected to the source electrode 11 of the thin-film transistor devices through a pad 15; separating the flexible substrate and the sacrificial layer; forming Micro LEDs 17 electrically connected to the conductive layer on the surface of the flexible substrate facing away from the thin-film transistor devices. Among them, the positional relationship of the source electrode 14, drain electrode 12, active layer 7, gate electrode 9, gate insulating layer 8, and interlayer dielectric layer 4 included in the thin-film transistor devices can be as Figure 1 shown, and can also include a light-shielding layer 1.

[0004] Micro LEDs 17 need to pass through the flexible substrate 3, leveling layer 5, buffer layer 6, gate insulating layer 8, and interlayer dielectric layer 10 in sequence to reach the drain electrode 12 of the thin-film transistor devices. Therefore, the depth of the vias penetrating these film layers is relatively deep, and there are problems such as difficult control of the via depth and easy breakage of signal lines, which reduces the manufacturing yield of the display panel. Moreover, during the manufacturing process, polyimide material needs to be coated multiple times, and there is also the problem of complex manufacturing processes. Summary of the Invention

[0005] An embodiment of the present invention provides a method for manufacturing a display panel and a display panel, so as to simplify the manufacturing process of the display panel and improve the manufacturing yield of the display panel.

[0006] In a first aspect, an embodiment of the present invention provides a method for manufacturing a display panel, including:

[0007] Providing a glass substrate and forming a sacrificial layer on one side of the glass substrate;

[0008] Forming a flexible substrate on a side of the sacrificial layer away from the glass substrate;

[0009] Forming a thin-film transistor device layer on a side of the flexible substrate away from the glass substrate; the thin-film transistor device layer includes a plurality of thin-film transistor devices and a front metal overlap layer in contact with a signal input electrode in the thin-film transistor devices;

[0010] Forming a planarization layer on a side of the thin-film transistor device layer away from the glass substrate and etching the planarization layer to form a first opening; the first opening exposes a source or a drain in the thin-film transistor devices;

[0011] Forming a plurality of light-emitting structures on a side of the planarization layer away from the glass substrate; each light-emitting structure is electrically connected to a source or a drain in a corresponding thin-film transistor device through the first opening;

[0012] Forming a transparent encapsulation protection layer on a side of the light-emitting structure away from the glass substrate;

[0013] Separating the flexible substrate and the sacrificial layer and forming an overlap hole exposing the front metal overlap layer from a side of the flexible substrate away from the thin-film transistor device layer; the overlap hole is used to connect an external driving chip and the thin-film transistor devices; wherein, the front metal overlap layer is a stacked structure; the melting point of at least the film layer closer to the flexible substrate side in the stacked structure is higher than the melting point of the signal input electrode in the thin-film transistor devices.

[0014] Optionally, before forming the flexible substrate on the side of the sacrificial layer away from the glass substrate, it further includes:

[0015] Manufacturing a back metal trace layer on a side of the sacrificial layer away from the glass substrate.

[0016] Optionally, the back metal trace layer includes a dissociation layer and a conductive layer with the same pattern; the dissociation layer is closer to the sacrificial layer than the conductive layer;

[0017] Among them, the material of the dissociation layer includes: Ag nanowires, carbon nanotubes or graphene, and the thickness range is 5 nm to 50 nm; the material of the conductive layer includes Ag, Cu, Mo, Ti, Al, Ni, Au, Pd, Pt or alloy materials mainly composed of the above elements, and the thickness range is: 50 nm to 20,000 nm.

[0018] Optionally, if the material of the dissociation layer includes Ag nanowires; after forming the transparent encapsulation protection layer on the side of the LED light-emitting structure away from the glass substrate, it further includes:

[0019] Etch the dissociation layer with an Ag etchant to separate the conductive layer and the sacrificial layer;

[0020] If the material of the dissociation layer includes carbon nanotubes or graphene; after forming the transparent encapsulation protection layer on the side of the LED light-emitting structure away from the glass substrate, it further includes:

[0021] Bombard the dissociation layer with plasma to separate the conductive layer and the sacrificial layer.

[0022] Optionally, forming the thin-film transistor device layer on the side of the flexible substrate away from the glass substrate includes:

[0023] Form the gate in the thin-film transistor device on the side of the flexible substrate away from the glass substrate; the gate covers a part of the flexible substrate;

[0024] Form a gate insulating layer on the side of the gate away from the glass substrate, the side walls of the gate, and the flexible substrate not covered by the gate;

[0025] Form the positive metal overlap layer, the source electrode, the drain electrode, the active layer and the auxiliary electrode in the thin-film transistor device on the side of the gate insulating layer away from the flexible substrate;

[0026] Among them, the vertical projection of the active layer on the flexible substrate coincides at least partially with the vertical projection of the gate on the flexible substrate; the source electrode and the drain electrode are located on both sides of the active layer and are both in contact with the active layer; the positive metal overlap layer includes a first positive metal overlap layer and a second positive metal overlap layer; the drain electrode or the source electrode is in contact with the first positive metal overlap layer, and the auxiliary electrode is in contact with the second positive metal overlap layer.

[0027] Optionally, forming the overlap hole of the exposed metal overlap layer from the side of the flexible substrate away from the thin-film transistor device layer includes:

[0028] Sequentially etch the flexible substrate and the gate insulating layer with a laser to form an overlap hole exposing the positive metal overlap layer.

[0029] Optionally, before forming the sacrificial layer on one side of the glass substrate, the method further includes:

[0030] Forming a convex structure on the side of the glass substrate where all the sacrificial layers are to be formed; the vertical projection of the convex structure on the glass substrate at least partially coincides with the vertical projection of the front metal overlapping layer on the glass substrate;

[0031] Wherein, the convex structure is used to form a second opening at a position corresponding to the convex structure in the flexible substrate when preparing the flexible substrate by coating a PI solution; the second opening is used to expose the gate insulating layer after separating the flexible substrate and the sacrificial layer; alternatively, the convex structure is used to form a groove at a position corresponding to the convex structure in the flexible substrate when preparing the flexible substrate by coating a PI solution, and the groove is used to reduce the thickness of the flexible substrate etched when forming the overlapping hole after separating the flexible substrate and the sacrificial layer.

[0032] Optionally, if the second opening is formed at a position corresponding to the convex structure in the flexible substrate, forming an overlapping hole exposing the front metal overlapping layer from a side of the flexible substrate away from the thin film transistor device layer includes:

[0033] Etching the gate insulating layer exposed by the second opening through a yellow light process to form a third opening in the gate insulating layer to expose the front metal overlapping layer; wherein, the second opening and the third opening at the same position form an overlapping hole;

[0034] If the groove is formed at a position corresponding to the convex structure in the flexible substrate, forming an overlapping hole exposing the front metal overlapping layer from a side of the flexible substrate away from the thin film transistor device layer includes:

[0035] Based on the groove, etching the flexible substrate at the position where the groove is located to form a second opening exposing the gate insulating layer in the flexible substrate; and continuing to etch the gate insulating layer until the front metal overlapping layer is exposed; forming a third opening exposing the front metal overlapping layer in the gate insulating layer; the second opening and the third opening at the same position form an overlapping hole.

[0036] Optionally, forming the convex structure on the side of the glass substrate where all the sacrificial layers are to be formed includes:

[0037] Forming a photoresist layer on one side of the glass substrate, and patterning the photoresist layer to form the convex structure;

[0038] Alternatively, an amorphous silicon layer is formed on one side of the glass substrate, and the amorphous silicon layer is patterned to form the convex structure;

[0039] Alternatively, the surface on one side of the glass substrate is patterned to form the convex structure.

[0040] In a second aspect, an embodiment of the present invention provides a display panel formed by the preparation method of any of the display panels in the first aspect.

[0041] An embodiment of the present invention provides a method for preparing a display panel and a display panel. The method for preparing the display panel includes: providing a glass substrate, and forming a sacrificial layer on one side of the glass substrate; forming a flexible substrate on the side of the sacrificial layer away from the glass substrate; forming a thin-film transistor device layer on the side of the flexible substrate away from the glass substrate; the thin-film transistor device layer includes a plurality of thin-film transistor devices, and a front metal lap layer in contact with a signal input electrode in the thin-film transistor devices; forming a planarization layer on the side of the thin-film transistor device layer away from the glass substrate, and etching the planarization layer to form a first opening; the first opening exposes a source electrode or a drain electrode in the thin-film transistor device; forming a plurality of light-emitting structures on the side of the planarization layer away from the glass substrate; each light-emitting structure is electrically connected to a source electrode or a drain electrode in a corresponding thin-film transistor device through the first opening; forming a transparent encapsulation protection layer on the side of the light-emitting structure away from the glass substrate; separating the flexible substrate and the sacrificial layer, and forming a lap hole exposing the front metal lap layer from the side of the flexible substrate away from the thin-film transistor device layer; the lap hole is used to connect an external driving chip and the thin-film transistor device. In the technical solution provided by the embodiment of the present invention, forming the lap hole connecting the external driving chip and the thin-film transistor device only needs to penetrate the flexible substrate and the gate insulating layer, and the light-emitting structure only needs to be connected to the thin-film transistor device through a part of the planarization layer, which improves the problems that the via depth is difficult to control and the signal line is easy to break, and improves the preparation yield of the display panel; moreover, only one coating of polyimide material is required when forming the flexible substrate, and there is no need to prepare a leveling layer in the prior art, which simplifies the preparation process of the display panel and reduces the cost. Description of the Drawings

[0042] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0043] Figure 1 is a schematic structural diagram of a display panel provided in the prior art;

[0044] Figure 2It is a flowchart of a method for manufacturing a display panel provided by an embodiment of the present invention;

[0045] Figure 3 It is a cross-sectional view of the structure corresponding to step S110 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0046] Figure 4 It is a cross-sectional view of the structure corresponding to step S120 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0047] Figure 5 It is a cross-sectional view of the structure corresponding to step S130 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0048] Figure 6 It is a cross-sectional view of the structure corresponding to step S140 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0049] Figure 7 It is a cross-sectional view of the structure corresponding to step S160 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0050] Figures 8 - 10 It is a cross-sectional view of the structure corresponding to step S170 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0051] Figures 11 - 12 It is a cross-sectional view of the structure corresponding to step S180 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0052] Figure 13 It is a flowchart of another method for manufacturing a display panel provided by an embodiment of the present invention;

[0053] Figure 14 It is a cross-sectional view of the structure corresponding to step S220 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0054] Figure 15 It is a cross-sectional view of the structure corresponding to step S230 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0055] Figure 16 It is a cross-sectional view of the structure corresponding to step S260 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0056] Figures 17 - 18 It is a cross-sectional view of the structure corresponding to step S280 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0057] Figure 19It is a structural sectional view corresponding to step S290 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0058] Figure 20 It is a flowchart of another method for manufacturing a display panel provided by an embodiment of the present invention;

[0059] Figure 21 It is a structural sectional view corresponding to step S310 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0060] Figure 22 It is a structural sectional view corresponding to step S320 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0061] Figure 23 It is a structural sectional view corresponding to step S330 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0062] Figure 24 It is a structural sectional view corresponding to step S350 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0063] Figure 25 It is a structural sectional view corresponding to step S380 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0064] Figure 26 It is a structural sectional view corresponding to step S390 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0065] Figure 27 It is a structural sectional view corresponding to step S3100 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0066] Figures 28 - 29 It is a structural sectional view corresponding to step S3110 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0067] Figure 30 It is a flowchart of another method for manufacturing a display panel provided by an embodiment of the present invention;

[0068] Figure 31 It is a structural sectional view corresponding to step S410 in a method for manufacturing a display panel provided by an embodiment of the present invention;

[0069] Figure 32 It is a structural sectional view corresponding to step S420 in a method for manufacturing a display panel provided by an embodiment of the present invention. Detailed implementation manners

[0070] To enable those skilled in the art to better understand the solution of the present invention, the following will clearly and completely describe the technical solution in the embodiments of the present invention in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts shall fall within the scope of protection of the present invention.

[0071] The embodiment of the present invention provides a method for manufacturing a display panel. Figure 2 It is a flowchart of a method for manufacturing a display panel provided by an embodiment of the present invention. Refer to Figure 2 , the method for manufacturing a display panel includes:

[0072] S110. Provide a glass substrate and form a sacrificial layer on one side of the glass substrate.

[0073] Specifically, refer to Figure 3 , the glass substrate 10 has two opposite surfaces, and the side where the sacrificial layer 20 is formed is set as the first surface of the glass substrate. A layer of amorphous silicon material can be formed on the first surface of the glass substrate 10 as the sacrificial layer 20.

[0074] S120. Form a flexible substrate on the side of the sacrificial layer away from the glass substrate.

[0075] Specifically, refer to Figure 4 , after forming the sacrificial layer 20 on the first surface of the glass substrate 10, a flexible substrate 30 is formed on the surface of the sacrificial layer 20 facing away from the glass substrate 10. The flexible substrate 30 can provide good support and protection for the subsequent manufactured display device and even the entire display panel structure. The sacrificial layer 20 is disposed between the glass substrate 10 and the flexible substrate 30, and the glass substrate 10 can be peeled off by peeling off the sacrificial layer 20 from the flexible substrate 30. Moreover, the sacrificial layer 20 only contacts the flexible substrate 30, which can avoid the problem of metal fracture caused by the peeling operation in the subsequent laser peeling operation, protect the flatness and cleanliness of the surface of the flexible substrate facing the glass substrate side after peeling, and no surface treatment is required, saving energy consumption. The material of the flexible substrate 30 here is preferably PI, that is, polyimide.

[0076] S130. Form a thin film transistor device layer on the side of the flexible substrate away from the glass substrate; the thin film transistor device layer includes a plurality of thin film transistor devices and a positive metal overlap layer in contact with the signal input electrode in the thin film transistor devices.

[0077] Specifically, refer to Figure 5, a TFT device is fabricated on a PI film (flexible substrate 30), and a front metal overlap layer 47 is formed to form a thin film transistor device layer. Among them, the front metal overlap layer 47 has a stacked structure; the melting point of at least the film layer near the flexible substrate side in the stacked structure is higher than the melting point of the signal input electrode in the thin film transistor device. For example, materials near the PI side use high melting point W, Ta, Mo, Cr, Ti or alloys with them as the main materials.

[0078] In step S130, a thin film transistor device layer is formed on the side of the flexible substrate away from the glass substrate, including:

[0079] A gate 41 in the thin film transistor device is formed on the side of the flexible substrate 30 away from the glass substrate 10; the gate 41 covers a part of the flexible substrate 30;

[0080] A gate insulating layer 42 is formed on the side of the gate 41 away from the glass substrate 10, on the sidewalls of the gate 41, and on the flexible substrate 30 not covered by the gate 41;

[0081] A front metal overlap layer 47, a source 44, a drain 45 (or a source 45, a drain 44), an active layer 43, and an auxiliary electrode 46 in the thin film transistor device are formed on the side of the gate insulating layer 42 away from the flexible substrate 30.

[0082] Among them, the vertical projection of the active layer 43 on the flexible substrate 30 coincides at least partially with the vertical projection of the gate 41 on the flexible substrate 30; the source 44 and the drain 45 are located on both sides of the active layer 43 and are both in contact with the active layer 43; the front metal overlap layer 47 includes a first front metal overlap layer 471 and a second front metal overlap layer 472. Figure 5 Exemplarily, it is drawn that the source 44 is in contact with the first front metal overlap layer 471, or the drain 45 can be in contact with the first front metal overlap layer 471; the auxiliary electrode 46 is in contact with the second front metal overlap layer 472. The auxiliary electrode 46 can be a trace outside the TFT such as VSS, VDD in the pixel circuit. The signal input electrodes of the thin film transistor device are the source 44, the drain 45, and the auxiliary electrode 46.

[0083] S140. A planarization layer is formed on the side of the thin film transistor device layer away from the glass substrate, and the planarization layer is etched to form a first opening; the first opening exposes the source or drain in the thin film transistor device.

[0084] Specifically, refer to Figure 6, a planarization layer 50 is fabricated such that the surface of the flexible substrate 30 facing away from the glass substrate 10 remains flat, facilitating the subsequent formation of the light-emitting structure. The material of the planarization layer 50 can be polyimide or other organic planarization materials. After forming the planarization layer 50 on the side of the thin-film transistor device layer away from the glass substrate 10, the planarization layer 50 needs to be etched to form a first opening 51; the first opening 51 exposes the source electrode 44 or the drain electrode 45 in the thin-film transistor device, facilitating the connection between the electrode of the light-emitting structure and the thin-film transistor device. Figure 6 Exemplarily, the first opening 51 is drawn to expose the drain electrode 45 in the thin-film transistor device.

[0085] S150. Form a plurality of light-emitting structures on the side of the planarization layer away from the glass substrate; each light-emitting structure is electrically connected to the source electrode or the drain electrode in the corresponding thin-film transistor device through the first opening.

[0086] S160. Form a transparent encapsulation protection layer on the side of the light-emitting structure away from the glass substrate.

[0087] Specifically, referring to Figure 7 , a transparent encapsulation protection layer 70 is fabricated on the TFT and the light-emitting structure 60; the material can be a transparent organic material such as epoxy resin or acrylic; the transparent encapsulation protection layer 70 can prevent water and oxygen from damaging the internal structure of the display panel and can also ensure the flatness of the display panel after encapsulation.

[0088] S170. Separate the flexible substrate and the sacrificial layer, and form a lap hole exposing the front metal lap layer from the side of the flexible substrate away from the thin-film transistor device layer; the lap hole is used to connect the external driving chip and the thin-film transistor device.

[0089] Specifically, referring to Figures 8 - 9 , the flexible substrate 30 can be separated from the sacrificial layer 20 by using a laser or mechanical force, thereby peeling off the flexible substrate 30 and the glass substrate 10, exposing the surface of the flexible substrate 30 on the side facing away from the thin-film transistor device layer. The released flexible substrate 30 is reversed, and a lap hole 81 exposing the front metal lap layer 47 is formed from the side of the flexible substrate 30 away from the thin-film transistor device layer.

[0090] S180. Form a conductive lead in the lap hole and prepare a connection pad on the surface of the flexible substrate on the side away from the thin-film transistor device layer, and bond the driving chip to the connection pad.

[0091] Specifically, referring to Figures 11 - 12After forming a lap hole exposing the front metal lap layer 47, sputtering, vacuum evaporation or electroplating process can be used to form a conductive lead 822 in the lap hole, and a connecting pad 821 is prepared on the surface of the flexible substrate away from the thin film transistor device layer, and the driver chip 90 is bound to the connecting pad 821. Solution processing can also be used to conductorize the front metal lap layer 47 with silver paste and silver nanowires. The power signal provided by the driver chip 90 is connected to the front metal lap layer 47 via the connecting pad 821 and the conductive lead 822 in the lap hole. The signal input electrode in the thin film transistor device is connected to the front metal lap layer 47, thereby controlling the TFT driver board to realize the lighting of the light-emitting structure.

[0092] Among them, the overlap hole that exposes the front metal overlap layer 47 is formed from the side of the flexible substrate away from the thin film transistor device layer. The PI material and the gate insulation layer can be ablated using a femtosecond laser to expose the front overlap metal layer. The front metal overlap layer 47 is a laminated structure; the melting point of at least the film layer close to the flexible substrate side in the laminated structure is higher than the melting point of the signal input electrode in the thin film transistor device. The higher melting point of the front overlap metal layer 47 is used to ensure that the metal material is not damaged during the laser ablation process.

[0093] In the method for preparing a display panel provided in an embodiment of the present invention, it is only necessary to penetrate the flexible substrate and the gate insulating layer to form a lap hole connecting an external driving chip and a thin film transistor device, and the light-emitting structure only needs to pass through a portion of the planarization layer to be connected to the thin film transistor device, which improves the overall problem of difficult control of the via depth and easy breakage of the signal line, thereby improving the preparation yield of the display panel; in addition, during the preparation process, it is only necessary to coat the polyimide material once when forming the flexible substrate, and there is no need to prepare the leveling layer in the prior art, which simplifies the preparation process of the display panel and reduces the cost.

[0094] Figure 13 FIG. 13 is a flow chart of another method for preparing a display panel provided by an embodiment of the present invention. Referring to FIG. 13 , the method for preparing a display panel includes:

[0095] S210, providing a glass substrate, and forming a sacrificial layer on one side of the glass substrate.

[0096] S220 , manufacturing a back metal wiring layer on a side of the sacrificial layer away from the glass substrate.

[0097] Specifically, refer to Figure 14, different from the above embodiments, in the embodiments of the present invention, a back metal wiring layer 100 is fabricated on the side of the sacrificial layer 20 away from the glass substrate 10. It can be understood that whether the back metal wiring layer 100 is prepared is related to the number of driving chips required to control the entire display panel. If the number of driving chips required to control the entire display panel is large, the back metal wiring layer can be prepared in the flexible substrate. For example, if the display panel is an OLED display panel and the light-emitting structure therein is an OLED light-emitting structure, the back metal wiring layer may not be prepared in the flexible substrate, and the front metal wiring (front metal overlapping layer) can meet the setting of the signal transmission line. For example, if the display panel is a Micro LED display panel and the light-emitting structure therein is an LED light-emitting structure. The driving of Micro LED has relatively high requirements for the number of chips, and one driving chip is required for several light-emitting structures. In this case, the back metal wiring layer 100 needs to be prepared.

[0098] Among them, the back metal wiring layer 100 includes a dissociation layer and a conductive layer (not shown) with the same pattern; the dissociation layer is closer to the sacrificial layer than the conductive layer. The dissociation layer is composed of one-dimensional or two-dimensional nanomaterials such as Ag nanowires, carbon nanotubes, graphene, etc.; or a sputtered carbon film with a thickness of 5 nm to 50 nm; the preparation methods include spin coating, spraying, and inkjet printing; the conductive layer is made of Ag, Cu, Mo, Ti, Al, Ni, Au, Pd, Pt or alloy materials mainly composed of the above elements, and the preparation methods include sputtering, evaporation, chemical vapor deposition, and electroplating; the thickness range is 50 nm to 20,000 nm. The same mask can be used to pattern the conductive layer and the dissociation layer in sequence, so that the patterns of the dissociation layer and the conductive layer are the same.

[0099] It should be noted that if the material of the dissociation layer includes Ag nanowires, after step S270, that is, after forming the transparent encapsulation protection layer on the side of the LED light-emitting structure away from the glass substrate, it further includes: etching the dissociation layer with an Ag etching solution to separate the conductive layer and the sacrificial layer 20. If the material of the dissociation layer includes carbon nanotubes or graphene; after forming the transparent encapsulation protection layer on the side of the LED light-emitting structure away from the glass substrate, it further includes: bombarding the dissociation layer with plasma to separate the conductive layer and the sacrificial layer 20. By providing a dissociation layer between the conductive layer and the sacrificial layer 20, the difficulty of peeling the back metal wiring layer 100 from the sacrificial layer can be further reduced.

[0100] S230. A flexible substrate is formed on the side of the back metal wiring layer away from the glass substrate.

[0101] Specifically, refer to Figure 15PI solution can be applied to prepare a PI film to form a flexible substrate 30, and the thickness of the flexible substrate 30 includes: 10um-50um. The thickness of the flexible substrate is greater than the thickness of the back metal wiring layer 100. When the flexible substrate 30 is separated from the glass substrate 10 by laser or mechanical force, the flexible substrate 30 can be guaranteed to fix the back metal wire in the body. Among them, when the laser is used to irradiate the sacrificial layer, H gas is released, which can change the adhesion between the sacrificial layer 20 and the metal plating layer.

[0102] S240, forming a thin film transistor device layer on a side of the flexible substrate away from the glass substrate; the thin film transistor device layer includes a plurality of thin film transistor devices and a front metal bonding layer in contact with the signal input electrodes in the thin film transistor devices.

[0103] S250, forming a planarization layer on a side of the thin film transistor device layer away from the glass substrate, and etching the planarization layer to form a first opening; the first opening exposes a source or a drain in the thin film transistor device.

[0104] S260, forming a plurality of LED light-emitting structures on a side of the planarization layer away from the glass substrate; each LED light-emitting structure is electrically connected to a source or a drain in a corresponding thin film transistor device through the first opening.

[0105] S270, forming a transparent encapsulation protection layer on a side of the LED light emitting structure away from the glass substrate.

[0106] Specifically, after steps S240 to S270, the structure cross-section diagram formed is as follows: Figure 16 The specific steps can be referred to the above embodiment, which will not be described here.

[0107] S280, separating the flexible substrate and the sacrificial layer, and forming a bridging hole exposing the front metal bridging layer from a side of the flexible substrate away from the thin film transistor device layer; the bridging hole is used to connect the external driving chip with the thin film transistor device.

[0108] Specifically, refer to Figure 17 and Figure 18 The flexible substrate 30 can be separated from the sacrificial layer 20 by laser or mechanical force, thereby peeling off the flexible substrate 30 and the glass substrate 10, exposing the surface of the flexible substrate 30 away from the thin film transistor device layer. The released flexible substrate 30 is turned over, and a bonding hole 81 is formed from the side of the flexible substrate 30 away from the thin film transistor device layer to expose the front metal bonding layer 47.

[0109] S290, forming a conductive lead in the overlap hole, and preparing a connection pad on the surface of the flexible substrate away from the thin film transistor device layer, and binding the driving chip to the connection pad.

[0110] refer to Figure 19 After forming a bonding hole that exposes the front metal bonding layer 47, a conductive lead 822 is formed in the bonding hole, and a connecting pad 821 is prepared on the surface of the flexible substrate away from the thin film transistor device layer, and the driving chip 90 is bound to the connecting pad 821.

[0111] In the method for preparing a display panel provided in an embodiment of the present invention, the formation of a lap hole connecting an external driving chip and a thin film transistor device only requires penetrating a flexible substrate and a gate insulating layer, and the light-emitting structure only requires passing through a portion of a planarization layer to be connected to the thin film transistor device, which overall improves the problem of difficult control of the via depth and easy breakage of the signal line, and improves the preparation yield of the display panel; in addition, during the preparation process, it is only necessary to coat the polyimide material once when forming the flexible substrate, and there is no need to prepare a leveling layer in the prior art, which simplifies the preparation process of the display panel and reduces the cost. On this basis, in an embodiment of the present invention, a back metal wiring layer is made on the side of the sacrificial layer away from the glass substrate. The requirement for the number of chips required by the drive of Micro LED is relatively high. Among them, the back metal wiring layer includes a dissociation layer and a conductive layer with the same pattern; relative to the conductive layer, the dissociation layer is closer to the sacrificial layer. By arranging a dissociation layer between the conductive layer and the sacrificial layer, the difficulty of peeling the back metal wiring layer from the sacrificial layer can be reduced.

[0112] Figure 20 FIG. 20 is a flow chart of another method for preparing a display panel provided in an embodiment of the present invention. Referring to FIG. 20 , the method for preparing a display panel includes:

[0113] S310, providing a glass substrate, and forming a protruding structure on one side of the glass substrate, wherein the material of the protruding structure includes photoresist or amorphous silicon.

[0114] Specifically, refer to Figure 21, a raised structure 11 is first formed on the side of the glass substrate 10 where the sacrificial layer is to be formed. Forming the raised structure may include: forming a photoresist layer on one side of the glass substrate 10 and patterning the photoresist layer to form the raised structure 11. Alternatively, forming an amorphous silicon layer on one side of the glass substrate 10 and patterning the amorphous silicon layer to form the raised structure 11. The distance range from the surface of the side of the raised structure 11 away from the glass substrate 10 to the glass substrate includes 5 - 55 μm, that is, the height range of the raised structure 11 includes 5 - 55 μm. Among them, the vertical projection of the raised structure 11 on the glass substrate 10 and the vertical projection of the subsequently prepared front metal overlapping layer on the glass substrate overlap at least partially. The raised structure 11 is used to form a second opening at the position corresponding to the raised structure in the flexible substrate when preparing the flexible substrate by coating a PI solution; the second opening is used to expose the gate insulating layer after separating the flexible substrate and the sacrificial layer. The cross-sectional shape of the raised structure 11 can be triangular, rectangular or trapezoidal. Here, the shape of the raised structure 11 is not limited, Figure 21 In the figure, the cross-sectional shape of the raised structure 11 is exemplarily drawn as triangular.

[0115] S320. Form a sacrificial layer on one side of the glass substrate, and the sacrificial layer covers the raised structure.

[0116] Specifically, refer to Figure 22 , a sacrificial layer 20 is formed on one side of the glass substrate 10, and the sacrificial layer 20 covers the raised structure 11.

[0117] S330. Fabricate a back metal trace layer on the side of the sacrificial layer away from the glass substrate.

[0118] Specifically, refer to Figure 23 , a back metal trace layer 100 is fabricated on the side of the sacrificial layer 20 away from the glass substrate 10. The composition of the back metal trace layer 100 can refer to the above embodiments and will not be elaborated here.

[0119] S340. Form a flexible substrate on the side of the back metal trace layer away from the glass substrate.

[0120] Specifically, refer to Figure 24, a PI solution can be coated, and after curing, a flexible substrate 30 is formed. The thickness range of the flexible substrate 30 includes: 10um - 50um. At the position where the convex structure 11 is located, the height of the coated PI solution can be no more than the height of the convex structure 11. After curing the PI solution to form the flexible substrate 30, the flexible substrate 30 can form a through hole, that is, a second opening. There is no need to laser burn the flexible substrate during the formation of the overlapping hole, which further simplifies the manufacturing process of the display panel. It should be noted that the sum of the heights of the convex structure 11 and the sacrificial layer 20 at the position of the convex structure 11 should be less than or equal to the height of the subsequent formed gate insulating layer to prevent the overlapping hole formed after separating the flexible substrate and the sacrificial layer from being too deep and affecting the front metal overlapping layer.

[0121] S350. Form a thin-film transistor device layer on the side of the flexible substrate away from the glass substrate; the thin-film transistor device layer includes a plurality of thin-film transistor devices and a front metal overlapping layer in contact with the signal input electrode in the thin-film transistor device.

[0122] S360. Form a planarization layer on the side of the thin-film transistor device layer away from the glass substrate, and etch the planarization layer to form a first opening; the first opening exposes the source or drain in the thin-film transistor device.

[0123] S370. Form a plurality of LED light-emitting structures on the side of the planarization layer away from the glass substrate; each LED light-emitting structure is electrically connected to the source or drain in the corresponding thin-film transistor device through the first opening.

[0124] S380. Form a transparent encapsulation protection layer on the side of the LED light-emitting structure away from the glass substrate.

[0125] Specifically, after steps S350 - S380, the cross-sectional view of the formed structure is as Figure 25 shown. The specific steps can refer to the above embodiments and will not be elaborated here.

[0126] S390. Separate the flexible substrate and the sacrificial layer to expose the second opening of the flexible substrate.

[0127] Specifically, referring to Figure 26 , the flexible substrate 30 and the sacrificial layer 20 can be separated by using a laser or mechanical force, thereby peeling off the flexible substrate 30 and the glass substrate 10, and exposing the surface of the flexible substrate 30 on the side away from the thin-film transistor device layer. Separate the flexible substrate 30 and the sacrificial layer 20, thereby exposing the second opening 31 in the flexible substrate 30.

[0128] S3100, etching the gate insulating layer exposed by the second opening through a yellow light process, forming a third opening in the gate insulating layer to expose the front metal overlapping layer; wherein the second opening and the third opening at the same position form an overlapping hole; the overlapping hole is used to connect the external driving chip and the thin film transistor device.

[0129] Specifically, the flexible substrate 30 after release is turned over, and the gate insulating layer 42 exposed by the second opening 31 is etched by a yellow light process, and a third opening 421 is formed in the gate insulating layer 42 to expose the front metal overlapping layer 47; wherein the second opening 31 and the third opening 421 at the same position form a overlapping hole 81; the overlapping hole 81 is used to connect the external driving chip and the thin film transistor device.

[0130] S3110, forming a conductive lead in the overlap hole, and preparing a connecting pad on the surface of the flexible substrate away from the thin film transistor device layer, and binding the driving chip to the connecting pad.

[0131] Specifically, refer to Figure 29 After forming a bonding hole to expose the front metal bonding layer, a conductive lead 822 is formed in the bonding hole, and a connecting pad 821 is prepared on the surface of the flexible substrate away from the thin film transistor device layer, and the driving chip 90 is bound to the connecting pad 821.

[0132] The method for preparing a display panel provided in an embodiment of the present invention, on the basis of the above-mentioned embodiment, forms a photoresist layer or an amorphous silicon layer on one side of a glass substrate, and patterns the photoresist layer or the amorphous silicon layer to form a protruding structure. A through hole penetrating the flexible substrate can be formed during the preparation of the flexible substrate, so there is no need to etch the flexible substrate using a laser or dry etching process. Instead, only a common yellow light process is required to etch the gate insulating layer (generally a stacked structure of SiOx, SiNx, AlOx or several thereof) to form a third opening penetrating the gate insulating layer, thereby forming a lap hole. The difficulty of preparing the lap hole in the display panel is further simplified, and the depth of the lap hole can be effectively controlled.

[0133] Optionally, in another embodiment of the present invention, when forming the flexible substrate on the side of the back metal trace layer away from the glass substrate in step S340, the height of the PI solution coating may not exceed the height of the convex structure 11. After curing the PI solution to form the flexible substrate 30, a groove is formed at the position corresponding to the convex structure in the flexible substrate. The groove is used to reduce the thickness of the flexible substrate etched when forming the overlapping hole after separating the flexible substrate and the sacrificial layer. Similarly, the difficulty of etching the through hole of the flexible substrate can be reduced. Then, after step S390, it further includes, based on the groove, laser-etching the flexible substrate at the position where the groove is located to form a second opening in the flexible substrate, exposing the gate insulating layer. In step S3100, the gate insulating layer exposed by the second opening can be etched through a yellow light process to form a third opening in the gate insulating layer to expose the front metal overlapping layer; where the second opening and the third opening at the same position form an overlapping hole. Alternatively, the gate insulating layer can be continuously etched by laser until the front metal overlapping layer is exposed; a third opening exposing the front metal overlapping layer is formed in the gate insulating layer; thereby forming an overlapping hole.

[0134] Figure 30 FIG. 31 is a flowchart of another method for manufacturing a display panel provided by an embodiment of the present invention. Referring to FIG. 31, the method for manufacturing a display panel includes:

[0135] S410: Provide a glass substrate, and pattern the surface of one side of the glass substrate to form a convex structure.

[0136] Specifically, referring to Figure 31 , etch the surface of one side of the glass substrate 10 to form a convex structure 11. The height range of the convex structure 11 includes 5 - 55 μm, that is, the depth range of etching the glass substrate includes 5 - 55 μm. The vertical projection of the convex structure 11 on the glass substrate 10 at least partially coincides with the vertical projection of the subsequent prepared front metal overlapping layer on the glass substrate. The convex structure is used to form a second opening at the position corresponding to the convex structure in the flexible substrate when preparing the flexible substrate by coating the PI solution; the second opening is used to expose the gate insulating layer after separating the flexible substrate and the sacrificial layer.

[0137] S420: Form a sacrificial layer on one side of the glass substrate, and the sacrificial layer covers the convex structure.

[0138] Specifically, referring to Figure 2 , form a sacrificial layer 20 on one side of the glass substrate 10, and the sacrificial layer 20 covers the convex structure 11.

[0139] S430: Fabricate a back metal trace layer on the side of the sacrificial layer away from the glass substrate.

[0140] S440. Form a flexible substrate on the side of the back metal wiring layer away from the glass substrate.

[0141] S450. Form a thin-film transistor device layer on the side of the flexible substrate away from the glass substrate; the thin-film transistor device layer includes a plurality of thin-film transistor devices and a front metal overlapping layer in contact with the signal input electrode in the thin-film transistor device.

[0142] S460. Form a planarization layer on the side of the thin-film transistor device layer away from the glass substrate, and etch the planarization layer to form a first opening; the first opening exposes the source or drain in the thin-film transistor device.

[0143] S470. Form a plurality of LED light-emitting structures on the side of the planarization layer away from the glass substrate; each LED light-emitting structure is electrically connected to the source or drain in the corresponding thin-film transistor device through the first opening.

[0144] S480. Form a transparent encapsulation protection layer on the side of the LED light-emitting structure away from the glass substrate.

[0145] S490. Separate the flexible substrate and the sacrificial layer to expose the second opening of the flexible substrate.

[0146] S4100. Etch the gate insulating layer exposed by the second opening through a yellow light process to form a third opening in the gate insulating layer to expose the front metal overlapping layer; wherein, the second opening and the third opening at the same position form a overlapping hole; the overlapping hole is used to connect the external driving chip and the thin-film transistor device.

[0147] Steps S430 to S4110 can refer to S330 to S3110 correspondingly, which will not be elaborated here. The method for preparing a display panel provided by the embodiment of the present invention, on the basis of the above embodiment, forms a raised structure of a PI through hole by etching the glass substrate. There is no need to form a photoresist layer or an amorphous silicon layer on one side of the glass substrate, and then pattern the photoresist layer or the amorphous silicon layer to form a raised structure. Therefore, while simplifying the difficulty of preparing the overlapping hole in the display panel and effectively controlling the depth of the overlapping hole, the process steps can be reduced, the preparation efficiency of the display panel can be further improved, and the cost can be reduced.

[0148] The embodiment of the present invention also provides a display panel formed by the method for preparing a display panel described in any of the above embodiments.

[0149] Exemplarily, refer to Figure 12, the display panel includes: a flexible substrate 30, on one side of the flexible substrate 30, a thin-film transistor device layer is formed; the thin-film transistor device layer includes a plurality of thin-film transistor devices, and a front metal overlap layer 47 in contact with the signal input electrode in the thin-film transistor devices. A planarization layer 50 is formed on the side of the thin-film transistor device layer away from the glass substrate, and the planarization layer 50 includes a first opening; the first opening exposes the source or drain in the thin-film transistor devices. There are a plurality of light-emitting structures 60 on the side of the planarization layer 50 away from the glass substrate; each light-emitting structure 60 is electrically connected to the source or drain in the corresponding thin-film transistor device through the first opening. A transparent encapsulation protection layer 70 is provided on the side of the light-emitting structure 60 away from the glass substrate. A lap hole exposing the front metal overlap layer 47 is provided from the side of the flexible substrate 30 away from the thin-film transistor device layer, and a conductive lead 822 is provided in the lap hole. And a connection pad 821 is prepared on the surface of the side of the flexible substrate facing away from the thin-film transistor device layer, and the driving chip 90 is bonded to the connection pad.

[0150] In the display panel provided by the embodiment of the present invention, the lap hole connecting the external driving chip and the thin-film transistor device only needs to penetrate through the flexible substrate 30 and the gate insulating layer 42, and the light-emitting structure 60 only needs to pass through a part of the planarization layer 50 to be connected to the thin-film transistor device, which overall improves the problems that the via depth is difficult to control and the signal line is easy to break, and improves the production yield of the display panel; in addition, during the preparation process, only one coating of polyimide material is required when forming the flexible substrate 30, and there is no need to prepare a leveling layer in the prior art, which simplifies the preparation process of the display panel and reduces the cost.

[0151] Note that the above is only the preferred embodiment of the present invention and the applied technical principle. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described here, and various obvious changes, re-adjustments and substitutions can be made by those skilled in the art without departing from the protection scope of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and more other equivalent embodiments can be included without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A method for manufacturing a display panel, characterized in that, comprising: providing a glass substrate, and forming a sacrificial layer on one side of the glass substrate; forming a flexible substrate on a side of the sacrificial layer away from the glass substrate; forming a thin film transistor device layer on a side of the flexible substrate away from the glass substrate; the thin film transistor device layer includes a plurality of thin film transistor devices, and a front metal overlap layer in contact with a signal input electrode in the thin film transistor devices; forming a planarization layer on a side of the thin film transistor device layer away from the glass substrate, and etching the planarization layer to form a first opening; the first opening exposes a source electrode or a drain electrode in the thin film transistor devices; forming a plurality of light emitting structures on a side of the planarization layer away from the glass substrate; each of the light emitting structures is electrically connected to a source electrode or a drain electrode in a corresponding thin film transistor device through the first opening; forming a transparent encapsulation protection layer on a side of the light emitting structure away from the glass substrate; separating the flexible substrate and the sacrificial layer, and forming an overlap hole exposing the front metal overlap layer from a side of the flexible substrate away from the thin film transistor device layer; the overlap hole is used to connect an external driving chip to the thin film transistor devices; wherein, the front metal overlap layer is a stacked structure; the melting point of at least the film layer closer to the flexible substrate side in the stacked structure is higher than the melting point of the signal input electrode in the thin film transistor devices.

2. The method for manufacturing a display panel according to claim 1, characterized in that, before forming the flexible substrate on a side of the sacrificial layer away from the glass substrate, further comprising: fabricating a back metal trace layer on a side of the sacrificial layer away from the glass substrate.

3. The method for manufacturing a display panel according to claim 2, characterized in that, the back metal trace layer includes a dissociation layer and a conductive layer with the same pattern; the dissociation layer is closer to the sacrificial layer relative to the conductive layer; wherein, the material of the dissociation layer includes: Ag nanowires, carbon nanotubes or graphene, and the thickness range includes 5nm to 50nm; the material of the conductive layer includes Ag, Cu, Mo, Ti, Al, Ni, Au, Pd, Pt or an alloy material with the above materials as the main body, and the thickness range includes: 50nm to 20000nm.

4. The method for manufacturing a display panel according to claim 3, characterized in that, if the material of the dissociation layer includes Ag nanowires; after forming the transparent encapsulation protection layer on a side of the light emitting structure away from the glass substrate, further comprising: etching the dissociation layer with an Ag etching solution to separate the conductive layer and the sacrificial layer; if the material of the dissociation layer includes carbon nanotubes or graphene; after forming the transparent encapsulation protection layer on a side of the light emitting structure away from the glass substrate, further comprising: bombarding the dissociation layer with plasma to separate the conductive layer and the sacrificial layer.

5. The method for manufacturing a display panel according to claim 1, characterized in that, forming the thin film transistor device layer on a side of the flexible substrate away from the glass substrate includes: A gate in a thin-film transistor device is formed on a side of the flexible substrate away from the glass substrate; the gate covers a part of the flexible substrate; A gate insulating layer is formed on a side of the gate away from the glass substrate, on sidewalls of the gate, and on the flexible substrate not covered by the gate; A positive metal overlap layer, a source, a drain, an active layer, and an auxiliary electrode in the thin-film transistor device are formed on a side of the gate insulating layer away from the flexible substrate; Wherein, a vertical projection of the active layer on the flexible substrate and a vertical projection of the gate on the flexible substrate at least partially overlap; the source and the drain are located on two sides of the active layer and are both in contact with the active layer; the positive metal overlap layer includes a first positive metal overlap layer and a second positive metal overlap layer; the source or the drain is in contact with the first positive metal overlap layer, and the auxiliary electrode is in contact with the second positive metal overlap layer.

6. The method for manufacturing a display panel according to claim 5, characterized in that, forming a lap hole exposing the metal overlap layer from a side of the flexible substrate away from the thin-film transistor device layer includes: sequentially etching the flexible substrate and the gate insulating layer by laser to form a lap hole exposing the positive metal overlap layer.

7. The method for manufacturing a display panel according to claim 5, characterized in that, before forming a sacrificial layer on one side of the glass substrate, further comprising: forming a convex structure on a side of the glass substrate where the sacrificial layer is to be formed; a vertical projection of the convex structure on the glass substrate and a vertical projection of the positive metal overlap layer on the glass substrate at least partially overlap; Wherein, the convex structure is used to form a second opening at a position corresponding to the convex structure in the flexible substrate when preparing the flexible substrate by coating a PI solution; the second opening is used to expose the gate insulating layer after separating the flexible substrate and the sacrificial layer; or, the convex structure is used to form a groove at a position corresponding to the convex structure in the flexible substrate when preparing the flexible substrate by coating a PI solution, and the groove is used to reduce the thickness of the flexible substrate etched when forming the lap hole after separating the flexible substrate and the sacrificial layer.

8. The method for manufacturing a display panel according to claim 7, characterized in that, if the second opening is formed at a position corresponding to the convex structure in the flexible substrate, forming a lap hole exposing the positive metal overlap layer from a side of the flexible substrate away from the thin-film transistor device layer includes: etching the gate insulating layer exposed by the second opening through a yellow light process to form a third opening in the gate insulating layer to expose the positive metal overlap layer; wherein, the second opening and the third opening at the same position form one lap hole; if the groove is formed at a position corresponding to the convex structure in the flexible substrate, forming a lap hole exposing the positive metal overlap layer from a side of the flexible substrate away from the thin-film transistor device layer includes: Based on the groove, etch the flexible substrate at the position of the groove to form a second opening in the flexible substrate that exposes the gate insulating layer; and continue to etch the gate insulating layer until the front metal overlap layer is exposed; form a third opening in the gate insulating layer that exposes the front metal overlap layer; the second opening and the third opening at the same position form a lap hole.

9. The method for manufacturing a display panel according to claim 7, wherein, forming a convex structure on the side of the glass substrate where the sacrificial layer is formed includes: forming a photoresist layer on one side of the glass substrate, and patterning the photoresist layer to form the convex structure; alternatively, forming an amorphous silicon layer on one side of the glass substrate, and patterning the amorphous silicon layer to form the convex structure; alternatively, patterning the surface of one side of the glass substrate to form the convex structure.

10. A display panel, wherein, it is formed by the method for manufacturing a display panel according to any one of claims 1-9.

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